Substrate processing equipment

Abstract

To provide a substrate processing device in which the positioning of a susceptor ring is well thought out.SOLUTION: The substrate processing device includes: a plurality of protrusions (protruding parts) 502 in one of the upper surface of a dispersion plate and the lower surface of a susceptor ring; and a plurality of trenches 501 (recessed parts) in the other of the upper surface of the dispersion plate and the lower surface of the susceptor ring. The susceptor ring is positioned on the dispersion plate in such a manner that the protrusions 502 are inserted into the trenches 501 so that side surfaces of the protrusions 502 become in contact with the inner surfaces of the trenches 501.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus for etching a film previously formed on a substrate.

Background Art

[0002] Japanese Unexamined Patent Application Publication No. 2017-143186 (Patent Document 1) discloses performing atomic layer level etching on a film formed on a semiconductor wafer.

[0003] Specifically, first, an active species (radical) of a processing gas formed using plasma is supplied and adhered to the upper surface of the film formed on the semiconductor wafer, thereby performing a process of generating a product layer on the upper surface. After that, electromagnetic waves in a wavelength range including infrared rays are irradiated onto the semiconductor wafer from a lamp arranged in a ring shape so as to surround the upper region of the semiconductor wafer, and a process of desorbing and volatilizing the product layer is performed. As a result, the product layer formed with a thickness equivalent to that of an atomic layer can be removed. From the above, by repeatedly performing the process of generating the product layer and the process of desorbing and volatilizing the product layer, an etching process can be performed.

[0004] Here, there is a possibility that each component arranged in the processing chamber may also be etched by the etching process. In particular, when components near the sample stage are etched, foreign matter generated by this etching may adhere to the semiconductor wafer. As a result, there is concern that pattern defects may occur, or the substrate processing apparatus may malfunction due to electrical conduction between the sample stage and the internal electrode due to wear of the sample stage.

[0005] Regarding this concern, implementing chemical or physical cleaning has been considered. Typically, for example, the technique disclosed in Japanese Unexamined Patent Application Publication No. 2022-152246 (Patent Document 2) is known. This technique is a technique for introducing gas from the outer peripheral portion of the sample stage, suppressing the diffusion of radicals to the side surface of the sample stage, and removing the remaining foreign matter with heated gas.

Prior Art Documents

[0006] [Patent Document 1] Japanese Patent Publication No. 2017-143186 [Patent Document 2] Japanese Patent Publication No. 2022-152246 [Overview of the project] [Problems that the invention aims to solve]

[0007] However, the technologies described above do not adequately consider the following points.

[0008] For example, the component (dispersion plate) that diffuses the gas introduced to the outer circumference of the sample stage in the circumferential direction requires precision in the flow path, so metals such as SUS (stainless steel) are used.

[0009] On the other hand, to prevent contamination of the semiconductor wafer by metal parts etched during the etching process, metal parts placed near the sample stage are covered with insulating materials such as quartz. Therefore, the dispersion plate is also covered with a quartz susceptor ring.

[0010] In this regard, near the sample stage, the fine gap between the side of the sample stage and the susceptor ring serves as a gas flow path, and the centering of the susceptor ring affects the circumferential uniformity of the gas. However, when aligning the susceptor ring using a skimming gauge, for example, there is a problem in that the aforementioned fine gap can vary depending on the work performed.

[0011] Furthermore, the susceptor ring is heated to around 200°C during the etching process. Here, metals such as SUS have a coefficient of thermal expansion that is two orders of magnitude larger than that of quartz. Therefore, due to the difference in coefficients of thermal expansion, it is not possible to fix the susceptor ring and the dispersion plate with bolts.

[0012] As a result, vibrations generated in the substrate processing apparatus during the etching process can cause the susceptor ring to shift centering, leading to uneven gas output. Uneven gas output in the circumferential direction can cause problems such as the accumulation of foreign matter in areas with low output flow rates and wear of the sample stage, as well as process control issues such as a deterioration in in-plane uniformity of the etching process because the radical distribution on the semiconductor wafer changes in the circumferential direction during the etching process.

[0013] The object of the present invention is to solve the above-mentioned problems and to provide a substrate processing apparatus that incorporates improvements regarding the position fixing of the susceptor ring. [Means for solving the problem]

[0014] In one embodiment, the substrate processing apparatus includes a container equipped with a processing chamber, a sample stage base material disposed inside the processing chamber and on which a substrate can be placed, a stepped portion provided on the outer circumference of the sample stage base material, internal piping provided inside the sample stage base material and reaching the lower surface of the stepped portion, a dispersion plate disposed on the lower surface of the stepped portion and having grooves for diffusing gas supplied from the internal piping toward the cylindrical stepped side surface of the stepped portion, a susceptor ring disposed on the dispersion plate, a ring-shaped gap provided between the susceptor ring and the stepped side surface and for allowing the gas diffused toward the stepped side surface to flow upward, a plurality of protrusions provided on one of the upper surfaces of the dispersion plate or the lower surface of the susceptor ring, and a plurality of recesses provided on the other of the upper surface of the dispersion plate or the lower surface of the susceptor ring, wherein the susceptor ring is positioned on the dispersion plate by inserting the protrusions into the recesses such that the side surfaces of the protrusions are in contact with the inner surfaces of the recesses. [Effects of the Invention]

[0015] According to one embodiment, by fixing the susceptor ring in position on the dispersion plate, a substrate processing apparatus that enables stable etching can be provided. [Brief explanation of the drawing]

[0016] [Figure 1]It is a cross-sectional view schematically showing the configuration of a substrate processing apparatus in an embodiment. [Figure 2] It is a cross-sectional view schematically showing the configuration of a stage gas supply mechanism of a substrate processing apparatus. [Figure 3] It is a view schematically showing the structure on the upper surface side of a dispersion plate. [Figure 4] It is a view schematically showing the structure on the lower surface side of a susceptor ring. [Figure 5] It is a view showing a procedure for aligning the protrusions of a dispersion plate and the grooves of a susceptor ring. [Figure 6] It is a view showing a procedure for aligning the protrusions of a susceptor ring and the grooves of a dispersion plate.

Mode for Carrying Out the Invention

[0017] In all the drawings for explaining the embodiment, in principle, the same members are denoted by the same reference numerals, and the repeated explanations thereof are omitted. Note that, for the sake of clarity of the drawings, hatching may be added even to a plan view.

[0018] <Configuration of Substrate Processing Apparatus> [[ID=No.29]]The substrate processing apparatus in this embodiment will be described. FIG. 1 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus in this embodiment. As shown in FIG. 1, a substrate processing apparatus 100 includes a vacuum chamber 101, a discharge unit 102 that forms the upper part of the vacuum chamber 101 and generates plasma inside, and a sample stage 103 that forms the lower part of the vacuum chamber 101 and places a semiconductor wafer (hereinafter sometimes referred to as wafer 1019). This sample stage 103 is disposed inside a processing chamber 104 provided in the lower part of the vacuum chamber 101. That is, the sample stage 103 is a stage on which the wafer 1019 to be processed is disposed, and is disposed inside the processing chamber 104 inside the vacuum chamber 101.

[0019] In addition, the substrate processing apparatus 100 includes an IR lamp unit 105 that heats the wafer 1019 on the sample stage 103, and a dielectric ion shield plate 106 having through-holes for allowing radical particles contained in the plasma to pass through. This ion shield plate 106 is provided in a passage connecting the discharge part 102 and the processing chamber 104.

[0020] In the substrate processing apparatus 100, the internal spaces of the processing chamber 104 and the discharge part 102 are cylindrical spaces, and their central axes are arranged coaxially or at positions approximately approximated thereto. The processing chamber 104 and the discharge part 102 are separated by a circular ion shield plate 106 arranged at a position where the central axis coincides with or is approximately approximated thereto, similarly to the processing chamber 104 and the discharge part 102. The processing chamber 104 and the discharge part 102 are communicated through a plurality of through-holes provided concentrically on the ion shield plate 106.

[0021] The discharge part 102 has a function of flowing in the processing gas 1013 to generate the plasma 1011, and is configured to be able to observe the state of the generated plasma by an optical method.

[0022] The substrate processing apparatus 100 is provided with a supply path for supplying the processing gas 1013 to the discharge part 102. Further, in the substrate processing apparatus 100, a supply path for supplying the plasma 1011 generated based on the processing gas 1013 for processing the wafer 1019 into the processing chamber 104 is arranged above the sample stage 103. Thereby, the plasma 1011 is generated from the processing gas 1013 supplied to the discharge part 102, and the generated plasma 1011 is introduced into the processing chamber 104 located below the discharge part 102.

[0023] The discharge section 102 is equipped with a cylindrical quartz chamber (dielectric chamber) 107 kept under vacuum, and an ICP coil 108 is installed outside the quartz chamber 107. The ICP coil 108 is connected to a high-frequency power supply via a matching circuit and has the function of generating plasma 1011 inside the quartz chamber 107 using an ICP (Inductively Coupled Plasma) discharge method. Here, for example, the frequency of the high-frequency power is in the tens of MHz range, such as 13.56 MHz.

[0024] The discharge section 102 is provided with a top plate 1014. Below the top plate 1014, an ion shield plate 106 is installed, and the processing gas 1013 is introduced into the processing chamber 104 via the ion shield plate 106.

[0025] A sealing member, such as an O-ring, is interposed between the top plate 1014 and the upper surface of the quartz chamber 107. This ensures that the inside of the discharge section 102 is airtightly sealed.

[0026] The flow rate of the treatment gas 1013 is adjusted by a mass flow controller installed for each type of gas. As the treatment gas 1013, combustible gases, combustion-supporting gases, mixtures thereof, or mixtures diluted with inert gases are used.

[0027] An exhaust opening is provided at the bottom of the processing chamber 104 to reduce the pressure inside the vacuum vessel 101, and the vacuum vessel 101 is connected to the vacuum pump 1017 through an exhaust pipe from this opening. Pressure regulating valves are placed along the path between the opening and the vacuum pump 1017 to adjust the flow rate or speed of the exhaust by increasing or decreasing the cross-sectional area of ​​the path or opening.

[0028] In the processing chamber 104, a sample stage 103 is positioned to mount a wafer 1019 at a location that coincides with or approximates to the central axis of the discharge unit 102 and the processing chamber 104.

[0029] An IR lamp unit 105 for heating the wafer 1019 is installed between the sample stage 103 and the discharge unit 102. The IR lamp unit 105 mainly consists of an IR lamp 1020, a reflector 1021 for reflecting IR light, and a light transmission window 1022.

[0030] A circular IR lamp 1020 is used. Specifically, the IR lamp 1020, which heats the wafer 1019 by irradiating it with electromagnetic waves, is arranged in a ring shape above the sample stage 103 and around the plasma supply path 1011.

[0031] The light emitted from the IR lamp 1020 is primarily light (sometimes called IR light) with wavelengths ranging from the visible light region to the infrared light region.

[0032] The IR lamp unit 105 has a light-transmitting window 1022 made of quartz that allows IR light to pass through, extending from its lower surface to its inner circumferential side wall.

[0033] The inner space of the inner circumference of the IR lamp unit 105 is a flow path through which the plasma 1011 generated in the discharge section 102 located above it flows. An ion shield plate 106 made of dielectric material is installed in this flow path to shield ions or electrons contained in the plasma 1011, while allowing neutral particles or radicals of the gas to pass through. The substrate processing apparatus 100 is configured as described above.

[0034] <Wafer processing method using substrate processing equipment> The substrate processing apparatus 100 performs a processing method on the wafer 1019. This processing method includes (1) forming a reaction product layer by radicals on the surface of the wafer 1019, and (2) heating the surface of the wafer 1019 by irradiating it with electromagnetic waves including infrared rays to remove the reaction product layer.

[0035] In the reaction product layer formation process, first, a processing gas is supplied to the radical generation space above the processing chamber 104, and radical particles are generated by activating the gas. The generated radical particles are supplied to the upper surface of the wafer 1019 placed in the processing chamber 104 via a gas introduction pipe connected to the processing chamber 104, and a reaction product layer is formed on the upper surface of the wafer 1019. In other words, radical particles are introduced onto the wafer 1019 placed on the sample stage 103, and a reaction product layer is formed on the surface of the film to be processed that is pre-formed on the upper surface of the wafer 1019.

[0036] Next, in the reaction product layer removal step, electromagnetic waves including infrared light are irradiated from an IR lamp unit 105 positioned on the top of the wafer 1019, and the products constituting the reaction product layer formed on the upper surface of the wafer 1019 are vaporized. This removes the reaction product layer. These steps are repeated alternately to etch the film to be processed. As described above, the wafer processing method is carried out using the substrate processing apparatus.

[0037] <Detailed configuration of the substrate processing equipment> The configuration of the stage gas supply mechanism for introducing gas from the outer periphery of the sample stage will be described below. Figure 2 is a schematic cross-sectional view showing the configuration of the stage gas supply mechanism of the substrate processing apparatus 100. In Figure 2, the sample stage 103 has a cylindrical structure coaxial with the central axis of the processing chamber and is configured to include a sample stage base material 201, a sample adsorption film 202 provided on the upper surface of the sample stage base material 201, and an electrode plate 203 embedded inside the sample adsorption film 202. A susceptor ring 205 is provided so as to surround the sample stage base material 201 from the side. The sample stage 103 configured in this way has the function of fixing and adsorbing the wafer 1019 and a cooling function.

[0038] The sample stage base material 201 is provided with a spiral-shaped refrigerant flow path for cooling the sample stage 103, and the refrigerant is circulated and supplied by a chiller.

[0039] A resin sheet, such as polyimide, is attached to the sample adsorption film 202 to prevent damage to the back surface of the wafer 1019 even when heating and cooling cycles are performed with the wafer 1019 adsorbed on it. Furthermore, as shown in Figure 2, a plate-shaped electrode plate 203 is embedded inside the sample adsorption film 202 to fix the wafer 1019 by electrostatic adsorption. This electrode plate 203 is connected to a DC power supply. In addition, grooves are provided in the sample adsorption film 202, allowing He gas to be supplied between the wafer 1019 and the sample adsorption film 202. As a result, the sample stage 103, whose temperature is controlled by the refrigerant path, and the wafer 1019 can come into thermal contact through the He gas, thereby efficiently cooling the wafer 1019 heated by the IR lamp unit.

[0040] A quartz susceptor ring 205 is placed on the outer periphery of the sample stage 103 to protect it from corrosion caused by etching gas. The susceptor ring 205 is cylindrical with the same central axis as the sample stage 103, and its inner diameter is designed to match the diameters of the side walls of the sample stage base material 201 and the sample adsorption film 202, respectively. It is provided to cover the portion of the sample stage 103 other than the area where the wafer 1019 is placed.

[0041] Below the susceptor ring 205 is a stage gas introduction mechanism 206 for removing foreign matter accumulated on the side surface of the sample stage 103 and for preventing foreign matter from entering. The stage gas introduction mechanism 206 is a mechanism that includes internal stage piping 207 and a dispersion plate 208.

[0042] The gas supplied by the internal stage piping 207 is diffused circumferentially in the groove 10 formed inside the dispersion plate 208, passes through the fine gap 209 (0.2 mm) between the susceptor ring 205 and the sample stage base material 201, and exits into the processing chamber from the back side of the wafer 1019.

[0043] The dispersion plate 208 is made of a metal such as SUS or anodized aluminum to ensure processing accuracy of flatness, and after being aligned with the sample stage base material 201 made of anodized aluminum, it is bolted in place at multiple locations.

[0044] In Figure 2, a stepped portion 210 is provided on the outer circumference of the sample stage base material 201, while internal stage piping 207 is provided inside the sample stage base material 201. This internal stage piping 207 is configured to reach the lower surface of the stepped portion 210. A dispersion plate 208 is placed on the lower surface of the stepped portion 210. This dispersion plate 208 has grooves 10 that diffuse the gas supplied from the internal stage piping 207 toward the cylindrical stepped side surface of the stepped portion. Specifically, for example, this groove 10 is composed of a ring-shaped ring groove 1 and a plurality of slits SL that are spaced apart in the circumferential direction on the inner circumference of the ring groove 1 and communicate with the ring groove 1 and the fine gap 209. As a result, the gas supplied by the internal stage piping 207 is diffused in the circumferential direction in the grooves 10 formed inside the dispersion plate 208 and reaches the cylindrical stepped side surface of the stepped portion 210. In other words, the gas supplied from the internal stage piping 207 to the dispersion plate 208 is guided from the ring groove 1 provided in the dispersion plate 208 to multiple slits SL, and then from the multiple slits SL to the fine gaps 209.

[0045] A susceptor ring 205 is placed on the aforementioned dispersion plate 208. As shown in Figure 2, a micro-gap 209 is provided between the susceptor ring 205 and the stepped side surface. The micro-gap 209 is a ring-shaped gap that allows the gas diffused on the stepped side surface to flow upward. A wafer 1019 is placed above the micro-gap 209. That is, in a plan view, the micro-gap 209 is provided so as to overlap with the wafer 1019.

[0046] <<Features of the Embodiment>> Here, a key feature of this embodiment lies in the connection structure between the susceptor ring 205 and the dispersion plate 208. For example, one of the upper surface of the dispersion plate 208 or the lower surface of the susceptor ring 205 is provided with a plurality of protrusions (projections 302), and the other of the upper surface of the dispersion plate 208 or the lower surface of the susceptor ring 205 is provided with a plurality of recesses (grooves 402). The susceptor ring 205 is positioned on the dispersion plate 208 by inserting the protrusions into the recesses so that the side surfaces of the protrusions are in contact with the inner surfaces of the recesses. The following provides a detailed explanation using diagrams.

[0047] Figure 3 schematically shows the structure of the upper side of the dispersion plate 208, and Figure 4 schematically shows the structure of the lower side of the susceptor ring 205.

[0048] As shown in Figure 3, the upper surface 301 of the dispersion plate 208 is provided with protrusions 302 (convex portions) at three or more locations. On the other hand, as shown in Figure 4, the lower surface 401 of the susceptor ring 205 is provided with grooves 402 (recesses) corresponding to positions into which the protrusions 302 can be inserted.

[0049] Specifically, the planar shape of the dispersion plate 208 is ring-shaped, and the planar shape of the susceptor ring 205 is also ring-shaped. In this case, the planar shape of the groove 402 is triangular. The triangular shape has a first side 402a extending in the radial direction of the ring shape, a second side 402b perpendicular to the first side 402a, and a hypotenuse 402c intersecting both the first side 402a and the second side 402b, and the inner surface of the groove 402 includes the hypotenuse 402c. In this way, a fitting projection 302 and a groove 402 are formed.

[0050] Figure 5 schematically shows the procedure for aligning the projections 502 of the dispersion plate with the grooves 501 of the susceptor ring. As shown in Figure 5, first, the susceptor ring is placed on the dispersion plate so that the projections 502 of the dispersion plate fit into the grooves 501 of the susceptor ring.

[0051] At this time, the projection 502 is made so as not to contact any of the inner surfaces (inner walls) of the groove 501 of the susceptor ring. Next, the susceptor ring is rotated and adjusted so that the projection 502 contacts the inclined hypotenuse 503 of the groove 501. Then, it is adjusted so that the projection 502 contacts the hypotenuse 503 of the groove 501 at three or more points. This positions the susceptor ring on the dispersion plate according to the machining accuracy of the groove 501 and the projection 502. In addition, to prevent eccentricity during rotation, the susceptor ring may be rotated while auxiliary gap gauges are inserted at three or more equally spaced locations in the gap between the susceptor ring and the sample substrate (fine gap 209 in Figure 2).

[0052] The features of this embodiment described above provide the following advantages. For example, during wafer processing in a substrate processing apparatus, the susceptor ring is expected to be subjected to vibrations from equipment such as a dry pump. In this regard, according to the features of this embodiment, since the protrusion 502 and the hypotenuse 503 of the groove 501 are in contact at three or more points, the position of the susceptor ring does not shift in the diametrical direction. On the other hand, during heat treatment, the temperature of both the susceptor ring and the dispersion plate reaches around 200°C due to the heat input. As a result, the quartz susceptor ring is expected to expand by 0.01 mm in the diametrical direction, while the SUS or alumina dispersion plate is expected to expand by 0.5 mm in the diametrical direction. However, in this case, due to the difference in linear expansion between the susceptor ring and the dispersion plate, the protrusion 502 is displaced away from the hypotenuse 503 of the groove 501, so the two do not interfere with each other and are not damaged. Furthermore, during etching, the accumulation of foreign matter in the groove 501 can be prevented by continuously flowing gas.

[0053] Based on the above, the features of this embodiment make it possible to reliably fix the susceptor ring to the dispersion plate without causing side effects, thereby providing a substrate processing apparatus that enables stable etching.

[0054] <Variation> For example, the susceptor ring may be processed to have protrusions on its lower surface while the dispersion plate has grooves on its upper surface, and in this case, the same effects as in the embodiment can be obtained.

[0055] Figure 6 schematically shows the procedure for aligning the projection 602 of the susceptor ring with the groove 601 of the dispersion plate. As shown in Figure 6, first, the susceptor ring is placed on the dispersion plate so that the projection 602 of the susceptor ring fits into the groove 601 of the dispersion plate.

[0056] At this time, the projection 602 is made so as not to contact any of the inner surfaces (inner walls) of the groove 601 of the dispersion plate. Next, the susceptor ring is rotated and adjusted so that the projection 602 contacts the inclined hypotenuse 603 of the groove 601. Then, it is adjusted so that the projection 602 contacts the hypotenuse 603 of the groove 601 at three or more points. As a result, the susceptor ring is positioned on the dispersion plate according to the machining accuracy of the groove 601 and the projection 602.

[0057] As a result, even in this modified example, the projection 602 and the hypotenuse 603 of the groove 601 are in contact at three or more points, so the position of the susceptor ring does not shift in the diametrical direction. In this case, as in the embodiment, side effects can be suppressed in this modified example as well. Therefore, even in this modified example, the susceptor ring can be reliably fixed in position on the dispersion plate without causing side effects, thereby providing a substrate processing apparatus that enables stable etching.

[0058] The present invention has been described in detail above based on its embodiments, but it goes without saying that the present invention is not limited to the above embodiments and can be modified in various ways without departing from its essence. [Explanation of Symbols]

[0059] 1 Ring groove 10 grooves 100 Substrate Processing Equipment 101 Vacuum container 102 Discharge section 103 Sample stage 104 Processing Room 105 IR Lamp Unit 106 Ion Shield Plate 107 Quartz Chamber 108 ICP coils 201 Sample stage base material 202 Sample Adsorption Film 203 Electrode plate 205 Susceptor Ring 206 Stage gas introduction mechanism 207 Stage internal piping 208 Dispersion plate 209 Microgaps 301 Top surface 302 Protrusion 401 Bottom surface 402 Groove 402a First side 402b Second side 402c hypotenuse 501 Groove 502 protrusion 503 Hypotenuse 601 Groove 602 Protrusion 603 Hypotenuse 1011 Plasma 1013 Processed gas 1014 Tabletop 1017 Vacuum pump 1019 wafer 1020 IR Lamp 1021 Reflector 1022 Light-transmitting window SL Slit

Claims

1. A container equipped with a processing chamber, A sample stage base material, which is placed inside the processing chamber and on which a substrate can be placed, A stepped portion provided on the outer periphery of the sample stage base material, An internal piping provided within the sample stage base material and reaching the lower surface of the stepped portion, A dispersion plate is positioned on the lower surface of the stepped portion and has grooves that diffuse the gas supplied from the internal piping toward the cylindrical stepped side surface of the stepped portion. A susceptor ring arranged on the aforementioned dispersion plate, A ring-shaped gap is provided between the susceptor ring and the stepped side surface, and allows the gas diffused on the stepped side surface to flow upward; A plurality of protrusions provided on either the upper surface of the dispersion plate or the lower surface of the susceptor ring, A plurality of recesses provided on the upper surface of the dispersion plate or the lower surface of the susceptor ring, It has, A substrate processing apparatus in which the susceptor ring is positioned on the dispersion plate by inserting the protrusion into the recess such that the side surface of the protrusion is in contact with the inner surface of the recess.

2. In the substrate processing apparatus according to claim 1, The planar shape of the aforementioned dispersion plate is ring-shaped. The planar shape of the susceptor ring is ring-shaped. The planar shape of the recess is triangular. The aforementioned triangular shape is, The first side extends radially in the ring shape, A second side perpendicular to the first side, The hypotenuses intersecting the first and second sides, It has, The inner surface of the recess includes the hypotenuse, wherein the substrate processing apparatus.

3. In the substrate processing apparatus according to claim 1 or 2, The groove is A ring-shaped first groove, A plurality of slits are provided on the inner circumference side of the first groove, spaced apart in the circumferential direction, and communicating with the first groove and the gap, A substrate processing apparatus having

4. In the substrate processing apparatus according to claim 1 or 2, In a plan view, the gap is provided so as to overlap with the substrate, in a substrate processing apparatus.

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