Yttrium protective film, method for manufacturing the same, and components.

A yttrium protective film with controlled porosity, hardness, and orientation is developed to address plasma resistance issues, ensuring improved performance and reduced defects in semiconductor manufacturing.

JP7833151B2Active Publication Date: 2026-03-19AGC INC +1
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2023-06-21
Publication Date
2026-03-19

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Abstract

Provided is an yttrium-based protective film having excellent plasma resistance and appearance.　The yttrium-based protective film provided herein contains an yttrium oxide, has a porosity of less than 0.5 vol% and a Vickers hardness of at least 800 HV. The yttrium-based protective film preferably has a thickness of at least 0.3 μm, a crystallite size of at most 40 nm, a Y2O3 (222) plane orientation of at least 50%, a hydrogen atom number of at most 5.0×1021 / cm3, and a compressive stress of 100-1,700 MPa.
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Citation Information

Patent Citations

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