Diode laser device with expanded cavity and method of fabrication

The monolithic integrated diode laser device with a passive propagation section and surface grating addresses the spectral linewidth and mechanical stability issues of existing devices, achieving stable single-frequency operation and mobile suitability.

JP7833473B2Active Publication Date: 2026-03-19FERDINAND BRAUN INSTITUT GGMBH LEIBNIZ INSTITUT FUR HOCHSTFREQUENZTECHNIK
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-01-13
Publication Date
2026-03-19

AI Technical Summary

Technical Problem

Existing monolithic integrated diode laser devices, such as DFB and DBR lasers, fail to achieve the spectral linewidth required for precise spectroscopy and coherent communication due to frequency noise, power fluctuations, and unstable operation, and are not suitable for mobile applications due to mechanical instability and large form factor.

Method used

A diode laser device with a monolithic integrated extended cavity design incorporating a passive propagation section and a surface grating, featuring a low-loss passive waveguide and a low-coupling coefficient Bragg section, allowing for stable single-frequency operation and reduced mechanical sensitivity.

Benefits of technology

The device achieves a fundamental linewidth equivalent to individually integrated ECDLs, with improved spectral stability and reduced mechanical sensitivity, enabling applications in precision spectroscopy and mobile use.

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Abstract

The present invention relates to an extended cavity diode laser device, in particular a monolithically integrated ECDL (mECDL) having a Bragg section with a surface grating, and a corresponding method of fabrication. The diode laser device according to the invention comprises, in a longitudinal direction (Z), an amplifier section (VS), a passive propagation section (PS) and a Bragg section (BS), the amplifier section (VS), the propagation section (PS) and the Bragg section (BS) being arranged between a front facet (22) and a rear facet (24), an active layer (15) being formed in the amplifier section (VS) over the entire length of the amplifier section (VS), and a surface grating (30) extending in the Bragg section (BS) over the entire length of the Bragg section (BS), the surface grating (30) being formed by a plurality of grooves (32) spaced apart from one another in the longitudinal direction (Z).
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Citation Information

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