Semiconductor equipment

Abstract

This semiconductor device is provided with a semiconductor element for switching, a first lead for mounting the semiconductor element, a second lead, and a sealing resin. The second lead is spaced apart from the first lead in a first direction orthogonal to the thickness direction of the semiconductor element. The sealing resin covers a part of each of the first lead and the second lead, and the semiconductor element. A resin back surface of the sealing resin includes a first end portion and a second end portion spaced apart from each other in the first direction. Further, the resin back surface includes a third end portion and a fourth end portion spaced apart from each other in a second direction orthogonal to the thickness direction and the first direction. Of the four end portions, the first lead is only exposed from the first end portion, and the second lead is only exposed from the second end portion.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device on which a semiconductor element is mounted.

Background Art

[0002] In an inverter device used in an electric vehicle, a hybrid vehicle, or the like, a semiconductor device including a switching element such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor) is used. For example, Patent Document 1 discloses an example of a semiconductor device including a switching element. The semiconductor device includes a switching element that is a MOSFET, a die pad on which the switching element is mounted, a plurality of leads that conduct to the switching element, and a sealing resin that covers the die pad, the leads, and the switching element. Some of the leads are connected to the die pad, and the die pad functions as a drain terminal by conducting to the drain electrode of the switching element and is exposed from the back surface and side surfaces of the sealing resin. Also, some of the other leads function as source terminals by conducting to the source electrode of the switching element and are exposed from the back surface and side surfaces of the sealing resin. The drain terminal and the source terminal are exposed side by side at the same end of the back surface of the sealing resin.

[0003] When the semiconductor device is directly supplied with power from a battery, a large current of 10 A or more is input to the semiconductor device. Also, since the drain terminal and the source terminal are arranged side by side at the same end of the back surface of the sealing resin, there is a risk that the drain terminal and the source terminal may short-circuit on the wiring board on which the semiconductor device is mounted. When the drain terminal and the source terminal are short-circuited, a large current flows directly to the downstream side of the semiconductor device, so the electronic components arranged on the downstream side are damaged, leading to a risk of failure of the entire system.

Prior Art Documents

Patent Documents

[0004] [Patent Document 1] Japanese Patent Publication No. 2013-69720 [Overview of the Initiative] [Problems that the invention aims to solve]

[0005] This disclosure was conceived under the circumstances described above, and one of its objectives is to provide a semiconductor device that can suppress the occurrence of short circuits. [Means for solving the problem]

[0006] A semiconductor device provided by this disclosure is a switching element and comprises: a semiconductor element having an element main surface and an element back surface facing opposite directions in the thickness direction; a first lead on which the semiconductor element is mounted and which is conductive to the semiconductor element; a second lead spaced apart from the first lead in a first direction perpendicular to the thickness direction and which is conductive to the semiconductor element; and a sealing resin covering a portion of the first lead and the second lead, and the semiconductor element. The sealing resin has a resin back surface facing the same side as the element back surface, and the resin back surface has a first end located on the first side in the first direction, a second end located on the second side in the first direction, a third end located on one side of the second direction perpendicular to the thickness direction and the first direction, and a fourth end located on the other side of the second direction. The first lead is exposed from the first end and not exposed from the second, third, and fourth ends, and the second lead is exposed from the second end and not exposed from the first, third, and fourth ends. [Effects of the Invention]

[0007] According to this disclosure, the first lead and the second lead are exposed from opposite ends on the back surface of the resin. Therefore, the occurrence of short circuits is suppressed compared to the case where the first lead and the second lead are exposed from the same end on the back surface of the resin.

[0008] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings. [Brief explanation of the drawing]

[0009] [Figure 1] This is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] Figure 1 is a perspective view of the semiconductor device shown, with the bottom side facing upwards. [Figure 3] Figure 1 is a plan view of the semiconductor device, shown through the sealing resin. [Figure 4] Figure 1 is a bottom view of the semiconductor device shown. [Figure 5] This is a cross-sectional view along the VV line in Figure 3. [Figure 6] This is a cross-sectional view along the line VI-VI in Figure 3. [Figure 7] This is a bottom view showing a semiconductor device according to a second embodiment of the present disclosure. [Figure 8] This is a bottom view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 9] This is a bottom view showing a semiconductor device according to a fourth embodiment of the present disclosure. [Figure 10] This is a bottom view showing a semiconductor device according to a fifth embodiment of the present disclosure. [Figure 11] This is a bottom view showing a semiconductor device according to a sixth embodiment of the present disclosure. [Figure 12] This is a bottom view showing a semiconductor device according to a seventh embodiment of the present disclosure. [Figure 13] This is a plan view showing a semiconductor device according to the eighth embodiment of the present disclosure. [Modes for carrying out the invention]

[0010] Preferred embodiments of this disclosure will be described below with reference to the accompanying drawings.

[0011] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed in a certain direction" includes both "object A overlapping with all of object B" and "object A overlapping with a part of object B."

[0012] A semiconductor device A1 according to a first embodiment of this disclosure will be described based on Figures 1 to 6. The semiconductor device A1 comprises a plurality of leads 1 to 3, a semiconductor element 6, wires 71 and 72, and a sealing resin 8. The semiconductor device A1 is used, for example, in an inverter device for electric vehicles or hybrid vehicles, and is powered directly from a battery. The application and function of the semiconductor device A1 are not limited. The package format of the semiconductor device A1 is DFN (Dual Flatpack No-leaded). However, the package format of the semiconductor device A1 is not limited to DFN.

[0013] FIG. 1 is a perspective view showing a semiconductor device A1. FIG. 2 is a perspective view showing the semiconductor device A1 with the bottom side on the upper side. FIG. 3 is a plan view showing the semiconductor device A1. In FIG. 3, for convenience of understanding, through the encapsulation resin 8, the outer shape of the encapsulation resin 8 is shown by an imaginary line (two-dot chain line). FIG. 4 is a bottom view showing the semiconductor device A1. FIG. 5 is a cross-sectional view taken along the line V-V in FIG. 3. FIG. 6 is a cross-sectional view taken along the line VI-VI in FIG. 3.

[0014] The semiconductor device A1 has a rectangular shape when viewed in the thickness direction (plan view). For convenience of explanation, the thickness direction (plan view direction) of the semiconductor device A1 is defined as the z direction, the direction along one side of the semiconductor device A1 perpendicular to the z direction (the left-right direction in FIG. 3) is defined as the x direction, and the direction perpendicular to the z direction and the x direction (the up-down direction in FIG. 3) is defined as the y direction. Also, one side in the z direction (the upper side in FIGS. 5 and 6) is defined as the z1 side, and the other side (the lower side in FIGS. 5 and 6) is defined as the z2 side. One side in the x direction (the right side in FIGS. 3 and 4) is defined as the x1 side, and the other side (the left side in FIGS. 3 and 4) is defined as the x2 side. One side in the y direction (the upper side in FIG. 3) is defined as the y1 side, and the other side (the lower side in FIG. 3) is defined as the y2 side. The z direction is an example of the "thickness direction", the y direction is an example of the "first direction", and the x direction is an example of the "second direction". In this embodiment, the size of the semiconductor device A1 is, for example, the dimension in the x direction is 1 mm or more and 3 mm or less, the dimension in the y direction is 1 mm or more and 3 mm or less, and the dimension in the z direction is 0.3 mm or more and 1 mm or less. Note that each dimension of the semiconductor device A1 is not limited.

[0015] The plurality of leads 1 to 3 are in conduction with the semiconductor element 6. The leads 1 to 3 are formed, for example, by subjecting a metal plate to etching, punching, or the like. The leads 1 to 3 are made of metal, preferably either Cu or Ni, or an alloy thereof such as 42 alloy. In this embodiment, the case where the leads 1 to 3 are made of Cu will be described as an example. The thickness of the leads 1 to 3 is, for example, 0.08 to 0.3 mm, and is about 0.2 mm in this embodiment. In the following description, they will be referred to as the first lead 1, the second lead 2, and the third lead 3. When shown collectively, they will be referred to as the leads 1 to 3.

[0016] As shown in FIG. 3, the first lead 1 is disposed closer to the y1 side in the y direction of the semiconductor device A1 and extends over the entire x direction. The second lead 2 and the third lead 3 are disposed closer to the y2 side in the y direction of the semiconductor device A1, separated from the first lead 1 respectively, and arranged side by side in the x direction and spaced apart from each other. The dimension in the z - direction view is the largest for the first lead 1 and the smallest for the third lead 3.

[0017] The first lead 1 supports the semiconductor element 6 and includes a die pad portion 110, a plurality of terminal portions 120, and a plurality of connecting portions 130.

[0018] The die pad portion 110 is located at the center of the first lead 1 in the z - direction view and is substantially rectangular in the z - direction view. The die pad portion 110 has a die pad portion main surface 111, a die pad portion back surface 112, and a die pad portion back surface - side recess 113. The die pad portion main surface 111 and the die pad portion back surface 112 face opposite sides in the z direction. The die pad portion main surface 111 faces the z1 side in the z direction. The die pad portion main surface 111 is the surface on which the semiconductor element 6 is mounted. The die pad portion back surface 112 faces the z2 side in the z direction. The die pad portion back surface 112 is exposed from the sealing resin 8 and becomes a back - surface terminal.

[0019] The recess 113 on the back side of the die pad is a portion of the die pad 110 that is recessed from the back surface 112 of the die pad toward the main surface 111 of the die pad. The thickness (dimension in the z direction) of the portion of the die pad 110 where the recess 113 on the back side of the die pad is located is about half the thickness of the portion where the back surface 112 of the die pad is located. The recess 113 on the back side of the die pad is formed, for example, by a half-etching process. As shown in Figure 4, the recess 113 on the back side of the die pad is arranged around the back surface 112 of the die pad. As shown in Figures 4 and 6, the recess 113 on the back side of the die pad is not exposed from the sealing resin 8 and is covered by the sealing resin 8. This suppresses the peeling of the first lead 1 from the sealing resin 8 toward the z2 side in the z direction. The shape of the die pad 110 is not limited. For example, the die pad 110 does not have to have the recess 113 on the back side of the die pad.

[0020] Multiple terminal sections 120 are each connected to the die pad section 110 and are approximately rectangular in shape when viewed in the z direction. In this embodiment, three terminal sections 120 are arranged at equal intervals in the x direction on the y direction y1 side of the die pad section 110. The multiple terminal sections 120 are located on the y side (y1 side) in the semiconductor device A1. Each terminal section 120 has a terminal section main surface 121, a terminal section back surface 122, and a terminal section end surface 123. The terminal section main surface 121 and the terminal section back surface 122 face opposite each other in the z direction. The terminal section main surface 121 faces the z direction z1 side. The terminal section main surface 121 and the die pad section main surface 111 are flush. The terminal section back surface 122 faces the z direction z2 side. The terminal section back surface 122 and the die pad section back surface 112 are spaced apart in the y direction and are at the same position in the z direction. The terminal end face 123 is perpendicular to the main terminal face 121 and the back terminal face 122, and is connected to the main terminal face 121 and the back terminal face 122, facing in the y-direction y1. The terminal end face 123 is formed by dicing during the cutting process in the manufacturing process. The terminal end face 123 and the back terminal face 122 are exposed and connected from the sealing resin 8, forming the terminal (see Figures 4 and 6). The shape, arrangement position, and number of terminals 120 are not limited.

[0021] Multiple connecting portions 130 are each connected to the die pad portion 110 and are approximately rectangular in shape when viewed in the z direction. In this embodiment, two connecting portions 130 are arranged side by side in the y direction on the x1 side of the die pad portion 110 in the x direction. Two other connecting portions 130 are arranged side by side in the y direction on the x2 side of the die pad portion 110 in the x direction. The thickness (dimension in the z direction) of each connecting portion 130 is approximately the same as the thickness of the die pad portion 110 where the recess 113 on the back side of the die pad portion is located. The connecting portions 130 are formed, for example, by a half-etching process. Each connecting portion 130 has a connecting portion main surface 131, a connecting portion back surface 132, and a connecting portion end surface 133. The connecting portion main surface 131 and the connecting portion back surface 132 face opposite each other in the z direction. The connecting portion main surface 131 faces the z1 side in the z direction. The connecting portion main surface 131 and the die pad portion main surface 111 are flush. Therefore, the die pad main surface 111, the terminal main surface 121, and the connecting part main surface 131 form a flush, integrated surface (see Figure 3). The connecting part back surface 132 faces the z2 direction. The connecting part back surface 132 and the die pad back surface recess 113 are flush. The connecting part end surface 133 is the surface that connects the connecting part main surface 131 and the connecting part back surface 132, and faces outward in the x direction. The connecting part end surface 133 is formed by dicing in the cutting process during the manufacturing process. The connecting part end surface 133 is exposed from the sealing resin 8. The shape, arrangement position, and number of connecting parts 130 are not limited.

[0022] The second lead 2 is located at the corner on the x-direction x1 side and y-direction y2 side of the semiconductor device A1 in a view in the z direction (the lower right corner in Figure 3), and includes a wire bonding portion 210, a plurality of terminal portions 220, and a connecting portion 230.

[0023] The wire bonding section 210 is substantially rectangular in shape, elongated in the x-direction when viewed in the z-direction, and is located on the y-direction y1 side of the second lead 2. The wire bonding section 210 has a main surface 211, a back surface 212, and a recess 213 on the back surface. The main surface 211 and the back surface 212 face opposite each other in the z-direction. The main surface 211 faces the z-direction z1 side. The main surface 211 is the surface to which the wire 71 is bonded. The back surface 212 faces the z-direction z2 side. The back surface 212 is exposed from the sealing resin 8 and becomes a back terminal.

[0024] The recess 213 on the back side of the wire bonding portion is a portion of the wire bonding portion 210 that is recessed from the back surface 212 of the wire bonding portion toward the main surface 211 of the wire bonding portion. The thickness (dimension in the z direction) of the portion of the wire bonding portion 210 where the recess 213 on the back side of the wire bonding portion is located is about half the thickness of the portion where the back surface 212 of the wire bonding portion is located. The recess 213 on the back side of the wire bonding portion is formed, for example, by a half-etching process. As shown in Figures 4 and 6, the recess 213 on the back side of the wire bonding portion is not exposed from the sealing resin 8 and is covered by the sealing resin 8. This suppresses the peeling of the second lead 2 from the sealing resin 8 toward the z2 side in the z direction. Note that the shape of the wire bonding portion 210 is not limited. For example, the recess 213 on the back side of the wire bonding portion may be omitted.

[0025] Each of the multiple terminal sections 220 is connected to the wire bonding section 210 and has a roughly rectangular shape when viewed in the z direction. In this embodiment, two terminal sections 220 are arranged side by side in the x direction on the y direction y2 side of the wire bonding section 210. The multiple terminal sections 220 are located on the y side (y2) in the semiconductor device A1. Each terminal section 220 has a terminal section main surface 221, a terminal section back surface 222, and a terminal section end surface 223. The terminal section main surface 221 and the terminal section back surface 222 face opposite each other in the z direction. The terminal section main surface 221 faces the z direction z1 side. The terminal section main surface 221 and the wire bonding section main surface 211 are flush. The terminal section back surface 222 faces the z direction z2 side. The terminal section back surface 222 and the wire bonding section back surface 212 are connected and are flush with each other. The terminal end face 223 is perpendicular to the main terminal face 221 and the back terminal face 222, and is connected to the main terminal face 221 and the back terminal face 222, facing in the y-direction y2. The terminal end face 223 is formed by dicing during the cutting process in the manufacturing process. The terminal end face 223 and the back terminal face 222 are exposed and connected from the sealing resin 8, forming the terminal (see Figures 2, 4, and 6). The shape, arrangement position, and number of terminals 220 are not limited.

[0026] The connecting portion 230 is connected to the wire bonding portion 210 and is approximately rectangular in z-direction. The connecting portion 230 is located on the x1 side in the x-direction of the wire bonding portion 210. The thickness of the connecting portion 230 (dimension in the z-direction) is approximately the same as the thickness of the wire bonding portion 210 where the recess 213 on the back side of the wire bonding portion is located. The connecting portion 230 is formed, for example, by a half-etching process. Each connecting portion 230 has a connecting portion main surface 231, a connecting portion back surface 232, and a connecting portion end surface 233. The connecting portion main surface 231 and the connecting portion back surface 232 face opposite each other in the z-direction. The connecting portion main surface 231 faces the z1 side in the z-direction. The connecting portion main surface 231 and the wire bonding portion main surface 211 are flush. Therefore, the main surface 211 of the wire bonding portion, the main surface 221 of the terminal portion, and the main surface 231 of the connecting portion form a flush, integrated surface (see Figure 3). The back surface 232 of the connecting portion faces z2 in the z direction. The back surface 232 of the connecting portion and the recess 213 on the back side of the wire bonding portion are flush. The end surface 233 of the connecting portion is the surface that connects the main surface 231 of the connecting portion and the back surface 232 of the connecting portion, and faces x1 in the x direction. The end surface 233 of the connecting portion is formed by dicing in the cutting process during the manufacturing process. The end surface 233 of the connecting portion is exposed from the sealing resin 8. The shape, arrangement position, and number of connecting portions 230 are not limited.

[0027] The third lead 3 is located at the corner on the x-direction x2 side and y-direction y2 side of the semiconductor device A1 in a view in the z-direction (the lower left corner in Figure 3), and includes a wire bonding portion 310, a terminal portion 320, and a connecting portion 330.

[0028] The wire bonding portion 310 is substantially rectangular in z-direction and is located on the y-direction y1 side of the third lead 3. The wire bonding portion 310 has a main surface 311, a back surface 312, and a recess 313 on the back surface. The main surface 311 and the back surface 312 face opposite each other in the z-direction. The main surface 311 faces the z-direction z1 side. The main surface 311 is the surface to which the wire 72 is bonded. The back surface 312 faces the z-direction z2 side. The back surface 312 is exposed from the sealing resin 8 and becomes a back terminal.

[0029] The recess 313 on the back side of the wire bonding portion is a portion of the wire bonding portion 310 that is recessed from the back surface 312 of the wire bonding portion toward the main surface 311 of the wire bonding portion. The thickness (dimension in the z direction) of the portion of the wire bonding portion 310 where the recess 313 on the back side of the wire bonding portion is located is about half the thickness of the portion where the back surface 312 of the wire bonding portion is located. The recess 313 on the back side of the wire bonding portion is formed, for example, by a half-etching process. As shown in Figure 4, the recess 313 on the back side of the wire bonding portion is not exposed from the sealing resin 8 and is covered by the sealing resin 8. This suppresses the peeling of the third lead 3 from the sealing resin 8 toward the z2 side in the z direction. Note that the shape of the wire bonding portion 310 is not limited. For example, the recess 313 on the back side of the wire bonding portion may be omitted.

[0030] The terminal portion 320 is connected to the wire bonding portion 310 and is approximately rectangular in z-direction. The terminal portion 320 is located on the y2 side in the y-direction of the wire bonding portion 310. In semiconductor device A1, the terminal portion 320 is located on the y2 side in the y-direction. The terminal portion 320 has a terminal portion main surface 321, a terminal portion back surface 322, and a terminal portion end surface 323. The terminal portion main surface 321 and the terminal portion back surface 322 face opposite each other in the z-direction. The terminal portion main surface 321 faces the z1 side in the z-direction. The terminal portion main surface 321 and the wire bonding portion main surface 311 are flush. The terminal portion back surface 322 faces the z2 side in the z-direction. The terminal portion back surface 322 and the wire bonding portion back surface 312 are connected and are flush with each other. The terminal end face 323 is perpendicular to the main terminal face 321 and the back terminal face 322, and is connected to the main terminal face 321 and the back terminal face 322, facing in the y-direction y2. The terminal end face 323 is formed by dicing during the cutting process in the manufacturing process. The terminal end face 323 and the back terminal face 322 are exposed and connected from the sealing resin 8, forming the terminal (see Figures 2 and 4). The shape, arrangement position, and number of terminals 320 are not limited.

[0031] The connecting portion 330 is connected to the wire bonding portion 310 and is approximately rectangular in shape when viewed in the z direction. The connecting portion 330 is located on the x2 side in the x direction of the wire bonding portion 310. The thickness of the connecting portion 330 (dimension in the z direction) is approximately the same as the thickness of the wire bonding portion 310 where the recess 313 on the back side of the wire bonding portion is located. The connecting portion 330 is formed, for example, by a half-etching process. The connecting portion 330 has a connecting portion main surface 331, a connecting portion back surface 332, and a connecting portion end surface 333. The connecting portion main surface 331 and the connecting portion back surface 332 face opposite each other in the z direction. The connecting portion main surface 331 faces the z1 side in the z direction. The connecting portion main surface 331 and the wire bonding portion main surface 311 are flush. Therefore, the main surface 311 of the wire bonding portion, the main surface 321 of the terminal portion, and the main surface 331 of the connecting portion form a flush, integrated surface (see Figure 3). The back surface 332 of the connecting portion faces the z-direction z2 side. The back surface 332 of the connecting portion and the recess 313 on the back side of the wire bonding portion are flush. The end surface 333 of the connecting portion is the surface that connects the main surface 331 of the connecting portion and the back surface 332 of the connecting portion, and faces the x-direction x2 side. The end surface 333 of the connecting portion is formed by dicing in the cutting process during the manufacturing process. The end surface 333 of the connecting portion is exposed from the sealing resin 8. The shape, arrangement position, and number of connecting portions 330 are not limited.

[0032] A plating layer may be formed on the surface of leads 1 to 3. The plating layer may be a laminate of Ni plating layer, Pd plating layer and Au plating layer to facilitate joining of wires 71 and 72, or it may be made of an alloy mainly composed of Sn to improve solder wettability.

[0033] The semiconductor element 6 is an element that performs the electrical function of the semiconductor device A1. The semiconductor element 6 is a switching element. In this embodiment, the semiconductor element 6 is a transistor such as a MOSFET (metal-oxide-semiconductor field-effect transistor). The semiconductor element 6 may also be an IGBT (Insulated Gate Bipolar Transistor) or a HEMT (High Electron Mobility Transistor). The semiconductor element 6 comprises an element body 60, a first electrode 61, a second electrode 62, and a third electrode 63.

[0034] The element body 60 is a rectangular plate in the z-direction. The element body 60 is made of a semiconductor material, and in this embodiment, it is made of Si (silicon). However, the material of the element body 60 is not limited and may be other materials such as SiC (silicon carbide) or GaN (gallium nitride). The element body 60 has an element main surface 6a and an element back surface 6b. The element main surface 6a and the element back surface 6b face opposite each other in the z-direction. The element main surface 6a faces the z1 side in the z-direction and is the surface facing away from the first lead 1. The element back surface 6b faces the z2 side in the z-direction and is the surface facing the first lead 1. The first electrode 61 is located on the element back surface 6b. The second electrode 62 and the third electrode 63 are located on the element main surface 6a. In this embodiment, the first electrode 61 is the drain electrode, the second electrode 62 is the source electrode, and the third electrode 63 is the gate electrode.

[0035] The semiconductor element 6 is mounted in the center of the main surface 111 of the die pad portion of the first lead 1 via a bonding material 75. In this embodiment, the bonding material 75 is a conductive bonding material, such as solder. The bonding material 75 may also be a conductive bonding material such as silver paste or sintered silver bonding material. The back surface 6b of the semiconductor element 6 is bonded to the main surface 111 of the die pad portion of the first lead 1 by the bonding material 75. The first electrode 61 of the semiconductor element 6 is electrically connected to the first lead 1 by the bonding material 75. As a result, the first lead 1 is electrically connected to the first electrode 61 (drain electrode) of the semiconductor element 6 and functions as a drain terminal.

[0036] Wires 71 and 72 connect the semiconductor element 6 and leads 2 and 3, making them electrically conductive. Wires 71 and 72 are made of metals such as Cu, Au, Ag, and Al. However, the material of wires 71 and 72 is not limited. As shown in Figure 3, multiple wires 71 are connected to the second electrode 62 of the semiconductor element 6 and to the main surface 211 of the wire bonding portion of the second lead 2. As a result, the second lead 2 is electrically connected to the second electrode 62 (source electrode) of the semiconductor element 6 and functions as a source terminal. In this embodiment, four wires 71 are arranged, and four wires 71 are bonded to the main surface 211 of the wire bonding portion. Wire 72 is connected to the third electrode 63 of the semiconductor element 6 and to the main surface 311 of the wire bonding portion of the third lead 3. As a result, the third lead 3 is electrically connected to the third electrode 63 (gate electrode) of the semiconductor element 6 and functions as a gate terminal. The number of each wire 71 and 72 is not limited. Alternatively, a metal plate such as Cu may be used instead of wires 71 and 72.

[0037] The semiconductor device A1 is powered directly by a battery, and current is input from the first electrode 61 to the semiconductor element 6 via the first lead 1, and output from the second electrode 62 via the second lead 2. Therefore, a large current of 10A to 30A flows through the first lead 1 and the second lead 2. However, the semiconductor device A1 switches between a current-flowing state and a current-free state in response to a pulse signal input to the third electrode 63 via the third lead 3. Therefore, a large current does not continuously flow from the first lead 1 to the second lead 2. However, if the first lead 1 and the second lead 2 are short-circuited, the large current supplied from the battery will continue to flow downstream of the semiconductor device A1.

[0038] The sealing resin 8 covers a portion of each of the leads 1 to 3, the semiconductor element 6, the bonding material 75, and the wires 71 and 72. The sealing resin 8 is made of, for example, black epoxy resin. However, the material of the sealing resin 8 is not limited.

[0039] The sealing resin 8 has a resin main surface 81, a resin back surface 82, and four resin side surfaces 83. The resin main surface 81 and the resin back surface 82 face opposite each other in the z direction. The resin main surface 81 is the surface facing z1 in the z direction, and the resin back surface 82 is the surface facing z2 in the z direction. As shown in Figures 2 and 4, the resin back surface 82 includes a first end 821 and a second end 822. The first end 821 is the end of the resin back surface 82 located on the y1 side in the y direction. The second end 822 is the end of the resin back surface 82 located on the y2 side in the y direction. The resin back surface 82 also includes a third end 823 and a fourth end 824. The third end 823 is the end of the resin back surface 82 located on the x1 side in the x direction. The fourth end 824 is the end of the resin back surface 82 located on the x2 side in the x direction.

[0040] The four resin sides 83 are each perpendicular to the resin main surface 81 and the resin back surface 82, connecting the resin main surface 81 and the resin back surface 82, and facing outward in the x or y direction. Each resin side 83 is formed by dicing in the cutting process during the manufacturing process. The four resin sides 83 include a first resin side 831, a second resin side 832, a third resin side 833, and a fourth resin side 834. The first resin side 831 and the second resin side 832 face opposite each other in the y direction. The first resin side 831 is positioned on the y1 side and faces the y1 side, and the second resin side 832 is positioned on the y2 side and faces the y2 side. The third resin side 833 and the fourth resin side 834 face opposite each other in the x direction. The third resin side surface 833 is positioned on the x-direction x1 side and faces the x-direction x1 side, and the fourth resin side surface 834 is positioned on the x-direction x2 side and faces the x-direction x2 side.

[0041] Each terminal end face 123 of the first lead 1 is exposed from the first resin side surface 831 and is flush with the first resin side surface 831. Each terminal end face 223 of the second lead 2 and the terminal end face 323 of the third lead 3 are exposed from the second resin side surface 832 and are flush with the second resin side surface 832. The connecting end face 133 of the first lead 1 that faces the x1 side and the connecting end face 233 of the second lead 2 are exposed from the third resin side surface 833 and are flush with the third resin side surface 833. The connecting end face 133 of the first lead 1 that faces the x2 side and the connecting end face 333 of the third lead 3 are exposed from the fourth resin side surface 834 and are flush with the fourth resin side surface 834. Furthermore, the back surface 112 of the die pad portion and the back surface 122 of each terminal portion of the first lead 1, the back surface 212 of the wire bonding portion and the back surface 222 of each terminal portion of the second lead 2, and the back surface 312 of the wire bonding portion and the back surface 322 of the terminal portion of the third lead 3 are exposed from the back surface 82 of the sealing resin 8 and are flush with each other.

[0042] The back surfaces 122 of each terminal portion 1 of the first lead 1 are exposed from the first end 821 of the resin back surface 82. On the other hand, the back surfaces 132 of each connecting portion 1 of the first lead 1 are not exposed from the resin back surface 82. Therefore, the first lead 1 is exposed from the first end 821 of the resin back surface 82, but not from the second end 822, the third end 823, and the fourth end 824. Also, the back surfaces 222 of the terminal portion 2 of the second lead 2 and the back surface 322 of the terminal portion 3 of the third lead 3 are exposed from the second end 822 of the resin back surface 82. On the other hand, the back surfaces 232 of the connecting portion 2 of the second lead 2 and the back surface 332 of the connecting portion 3 of the third lead 3 are not exposed from the resin back surface 82. Therefore, the second lead 2 and the third lead 3 are exposed from the second end 822 of the resin back surface 82, but not from the first end 821, the third end 823, and the fourth end 824.

[0043] Next, we will explain the effects and benefits of semiconductor device A1.

[0044] According to this embodiment, the first lead 1 is exposed from the first end 821 of the resin back surface 82, but not from the second end 822, the third end 823, and the fourth end 824. Similarly, the second lead 2 is exposed from the second end 822 of the resin back surface 82, but not from the first end 821, the third end 823, and the fourth end 824. In other words, the first lead 1 and the second lead 2 are exposed from opposite ends of the resin back surface 82 in the y-direction. Therefore, the semiconductor device A1 can suppress the occurrence of short circuits compared to the case where the first lead 1 and the second lead 2 are exposed from the same end of the resin back surface 82.

[0045] Furthermore, according to this embodiment, the die pad portion 110 of the first lead 1 is provided with a die pad portion back surface 112 that is exposed from the resin back surface 82. By joining the die pad portion back surface 112 to the wiring board, the first lead 1 can dissipate heat generated by the semiconductor element 6 by transferring it to the wiring board.

[0046] Furthermore, according to this embodiment, the back surface 112 of the die pad portion of the first lead 1 and the back surfaces 122 of the multiple terminal portions are spaced apart, and the recess 113 on the back surface of the die pad portion located between them is covered by the sealing resin 8. This further suppresses the peeling of the first lead 1 from the sealing resin 8 towards the z2 direction in the z-direction compared to the case where the back surface 112 of the die pad portion and the back surfaces 122 of the multiple terminal portions are connected. Furthermore, according to this embodiment, the first lead 1 is provided with multiple terminal portions 120. The back surfaces 122 of each terminal portion 120 are spaced apart from each other, and the recess 113 on the back surface of the die pad portion located between them is covered by the sealing resin 8. This further suppresses the peeling of the first lead 1 from the sealing resin 8 towards the z2 direction in the z-direction compared to the case where there is only one terminal portion 120.

[0047] Furthermore, according to this embodiment, the wire bonding portion 210 of the second lead 2 is substantially rectangular in shape, elongated in the x-direction when viewed in the z-direction, and the main surface 211 of the wire bonding portion, together with the main surface 221 of the terminal portion and the main surface 231 of the connecting portion arranged around it, forms a large, flush, integrated surface. Therefore, it is possible to bond a large number of wires 71 to the second lead 2. Also, according to this embodiment, the overall shape of the exposed surfaces from the resin back surface 82 of the second lead 2 (the back surface 212 of the wire bonding portion and the back surfaces 222 of the two terminal portions) is U-shaped, with the y2 side in the y-direction being open. In other words, the recess 213 on the back surface side of the wire bonding portion between the two terminal portions 220 is covered by the sealing resin 8. As a result, compared to the case where the two terminal portions 220 of the second lead 2 are connected to form a single terminal portion 220, peeling of the second lead 2 from the sealing resin 8 towards the z2 side in the z-direction can be further suppressed. In addition, the back surface 212 of the wire bonding portion is a single rectangular shape, elongated in the x-direction. In the main surface 211 of the wire bonding section, the region that overlaps with the back surface 212 of the wire bonding section when viewed in the z direction can stably bond the wire 71. Therefore, the second lead 2 has a wider region on the main surface 211 of the wire bonding section in which the wire 71 can be stably bonded compared to the case where the back surface 212 of the wire bonding section is divided into multiple parts in the x direction.

[0048] Figures 7 to 13 illustrate other embodiments of the present disclosure. In these figures, elements identical or similar to those in the above embodiments are denoted by the same reference numerals.

[0049] Figure 7 is a bottom view showing a semiconductor device A2 according to a second embodiment of the present disclosure, and corresponds to Figure 4. The shape of the second lead 2 in the semiconductor device A2 according to this embodiment differs from that of the semiconductor device A1 according to the first embodiment.

[0050] The second lead 2 according to the second embodiment is equipped with only one terminal portion 220. This terminal portion 220 is formed by connecting two terminal portions 220 in the second lead 2 according to the first embodiment. Therefore, the overall shape of the exposed surface from the resin back surface 82 of the second lead 2 (wire bonding portion back surface 212 and terminal portion back surface 222) was a U-shape with the y2 side open in the first embodiment, whereas in the second embodiment it is a rectangular shape that extends to the end on the y2 side.

[0051] In this embodiment as well, the first lead 1 and the second lead 2 are exposed from opposite ends in the y-direction of the resin back surface 82. Therefore, the semiconductor device A2 can suppress the occurrence of short circuits compared to the case where the first lead 1 and the second lead 2 are exposed from the same end of the resin back surface 82. Furthermore, since the die pad portion 110 of the first lead 1 is provided with a die pad portion back surface 112 that is exposed from the resin back surface 82, the first lead 1 can dissipate heat generated by the semiconductor element 6 by transferring it to the wiring board. In addition, since the die pad portion back surface 112 of the first lead 1 and the multiple terminal portion back surfaces 122 are spaced apart, and each terminal portion back surface 122 is also spaced apart from each other, the peeling of the first lead 1 from the sealing resin 8 towards the z2 side in the z-direction can be further suppressed. Furthermore, since the second lead 2 has a wide surface where the wire bonding portion main surface 211, the terminal portion main surface 221, and the connecting portion main surface 231 are flush and integrated, it is possible to bond a large number of wires 71. Furthermore, according to this embodiment, the overall shape of the exposed surface of the second lead 2 from the resin back surface 82 is rectangular, extending to the end on the y-direction y2 side. Therefore, the area in which the wire 71 can be stably bonded is even wider than in the first embodiment.

[0052] In this embodiment, we have described a case where the x-direction dimension of the terminal portion 220 is approximately three times larger than the x-direction dimension of the terminal portion 220 according to the first embodiment, but this is not limited to this. For example, the x-direction dimension of the terminal portion 220 may be approximately the same as the x-direction dimension of the terminal portion 220 according to the first embodiment. In other words, the second lead 2 according to the second embodiment may be the second lead 2 according to the first embodiment with only one terminal portion 220.

[0053] Figure 8 is a bottom view showing a semiconductor device A3 according to a third embodiment of the present disclosure, and corresponds to Figure 4. The shape of the second lead 2 in the semiconductor device A3 according to this embodiment differs from that of the semiconductor device A1 according to the first embodiment.

[0054] In the third embodiment, the second lead 2 has a wire bonding portion back surface 212 that is divided into two in the x direction, and the two wire bonding portion back surfaces 212 are separated by a resin back surface 82.

[0055] In this embodiment as well, the first lead 1 and the second lead 2 are exposed from opposite ends in the y-direction of the resin back surface 82. Therefore, the semiconductor device A2 can suppress the occurrence of short circuits compared to the case where the first lead 1 and the second lead 2 are exposed from the same end of the resin back surface 82. Furthermore, since the die pad portion 110 of the first lead 1 is provided with a die pad portion back surface 112 that is exposed from the resin back surface 82, the first lead 1 can dissipate heat generated by the semiconductor element 6 by transferring it to the wiring board. In addition, since the die pad portion back surface 112 of the first lead 1 and the multiple terminal portion back surfaces 122 are spaced apart, and each terminal portion back surface 122 is also spaced apart from each other, the peeling of the first lead 1 from the sealing resin 8 towards the z2 side in the z-direction can be further suppressed. Furthermore, since the second lead 2 has a wide surface where the wire bonding portion main surface 211, the terminal portion main surface 221, and the connecting portion main surface 231 are flush and integrated, it is possible to bond a large number of wires 71. Furthermore, according to this embodiment, the back surface 212 of the wire bonding portion of the second lead 2 is divided into two in the x direction, and the recess 213 on the back surface side of the wire bonding portion between the two wire bonding portion back surfaces 212 is covered by the sealing resin 8. As a result, compared to the first embodiment, peeling of the second lead 2 from the sealing resin 8 towards the z2 side in the z direction can be further suppressed.

[0056] Figure 9 is a bottom view showing a semiconductor device A4 according to the fourth embodiment of this disclosure, and corresponds to Figure 4. The semiconductor device A4 according to this embodiment has a different shape for the first lead 1 compared to the semiconductor device A1 according to the first embodiment.

[0057] The first lead 1 according to the fourth embodiment is equipped with only one terminal portion 120. This terminal portion 120 is formed by connecting three terminal portions 120 in the first lead 1 according to the first embodiment.

[0058] In this embodiment as well, the first lead 1 and the second lead 2 are exposed from opposite ends in the y-direction of the resin back surface 82. Therefore, the semiconductor device A2 can suppress the occurrence of short circuits compared to the case where the first lead 1 and the second lead 2 are exposed from the same end of the resin back surface 82. Furthermore, since the die pad portion 110 of the first lead 1 is provided with a die pad portion back surface 112 that is exposed from the resin back surface 82, the first lead 1 can dissipate heat generated by the semiconductor element 6 by transferring it to the wiring board. In addition, since the die pad portion back surface 112 of the first lead 1 and the multiple terminal portion back surfaces 122 are spaced apart, peeling of the first lead 1 from the sealing resin 8 towards the z2 side in the z-direction can be further suppressed. Furthermore, in this embodiment as well, the second lead 2 has a large surface where the wire bonding portion main surface 211, the terminal portion main surface 221, and the connecting portion main surface 231 are flush and integrated, so it is possible to bond a large number of wires 71. Furthermore, the overall shape of the exposed surface of the second lead 2 from the resin back surface 82 is U-shaped, and the recess 213 on the back side of the wire bonding portion between the two terminal portions 220 is covered by the sealing resin 8, so that the peeling of the second lead 2 from the sealing resin 8 towards the z2 side in the z direction can be further suppressed. In addition, since the back surface 212 of the wire bonding portion is a single rectangular shape that is long in the x direction, the area on the main surface 211 of the wire bonding portion in which the wire 71 can be stably bonded is wide.

[0059] In this embodiment, we have described a case where the x-direction dimension of the terminal portion 120 is approximately five times larger than the x-direction dimension of the terminal portion 120 according to the first embodiment, but this is not limited to this. For example, the x-direction dimension of the terminal portion 120 may be approximately the same as the x-direction dimension of the terminal portion 120 according to the first embodiment. In other words, the first lead 1 according to the fourth embodiment may be the first lead 1 according to the first embodiment with only one terminal portion 120. Also, the first lead 1 according to the fourth embodiment may be the first lead 1 according to the first embodiment with two terminal portions 120.

[0060] Figure 10 is a bottom view showing a semiconductor device A5 according to the fifth embodiment of this disclosure, and corresponds to Figure 4. The semiconductor device A5 according to this embodiment has a different shape for the first lead 1 compared to the semiconductor device A1 according to the first embodiment.

[0061] In the fifth embodiment, the first lead 1 has a die pad portion 110 that does not have a die pad portion back surface 112, and the die pad portion 110 is not exposed from the resin back surface 82.

[0062] In this embodiment as well, the first lead 1 and the second lead 2 are exposed from opposite ends in the y-direction of the resin back surface 82. Therefore, the semiconductor device A2 can suppress the occurrence of short circuits compared to the case where the first lead 1 and the second lead 2 are exposed from the same end of the resin back surface 82. Furthermore, since the back surfaces 122 of each terminal portion 1 of the first lead 1 are spaced apart from each other, the peeling of the first lead 1 from the sealing resin 8 towards the z2 side in the z-direction can be further suppressed. In addition, since the second lead 2 has a wide surface where the main surface 211 of the wire bonding portion, the main surface 221 of the terminal portion, and the main surface 231 of the connecting portion are flush and integrated, it is possible to bond a large number of wires 71. Furthermore, the overall shape of the exposed surface of the second lead 2 from the resin back surface 82 is U-shaped, and the recess 213 on the back side of the wire bonding portion between the two terminal portions 220 is covered by the sealing resin 8, so the peeling of the second lead 2 from the sealing resin 8 towards the z2 side in the z-direction can be further suppressed. Furthermore, since the back surface 212 of the wire bonding section is a single rectangular shape that is long in the x direction, the area on the main surface 211 of the wire bonding section in which the wire 71 can be stably bonded is wide. Moreover, according to this embodiment, since the die pad portion 110 of the first lead 1 is not exposed from the back surface 82 of the resin, it is possible to further suppress short circuits between the first lead 1 and the second lead 2.

[0063] Figure 11 is a bottom view showing a semiconductor device A6 according to the sixth embodiment of this disclosure, and corresponds to Figure 4. The shape of the first lead 1 in the semiconductor device A6 according to this embodiment differs from that of the semiconductor device A1 according to the first embodiment.

[0064] In the sixth embodiment, the first lead 1 is connected to the back surface 112 of the die pad portion and the back surface 122 of each terminal portion.

[0065] In this embodiment as well, the first lead 1 and the second lead 2 are exposed from opposite ends in the y-direction of the resin back surface 82. Therefore, the semiconductor device A2 can suppress the occurrence of short circuits compared to the case where the first lead 1 and the second lead 2 are exposed from the same end of the resin back surface 82. Furthermore, since the die pad portion 110 of the first lead 1 is provided with a die pad portion back surface 112 that is exposed from the resin back surface 82, the first lead 1 can dissipate heat generated by the semiconductor element 6 by transferring it to the wiring board. In addition, since the terminal portion back surfaces 122 of the first lead 1 are spaced apart from each other, peeling of the first lead 1 from the sealing resin 8 towards the z2 side in the z-direction can be further suppressed. Furthermore, since the second lead 2 has a large surface where the wire bonding portion main surface 211, the terminal portion main surface 221, and the connecting portion main surface 231 are flush and integrated, it is possible to bond a large number of wires 71. Furthermore, the overall shape of the exposed surface of the second lead 2 from the resin back surface 82 is U-shaped, and the recess 213 on the back side of the wire bonding portion between the two terminal portions 220 is covered by the sealing resin 8, so that the peeling of the second lead 2 from the sealing resin 8 towards the z2 side in the z direction can be further suppressed. In addition, since the back surface 212 of the wire bonding portion is a single rectangular shape that is long in the x direction, the area on the main surface 211 of the wire bonding portion in which the wire 71 can be stably bonded is wide. Moreover, according to this embodiment, the back surface 112 of the die pad portion extends to connect with the back surfaces 122 of each terminal portion, so that the heat dissipation function is further improved compared to the first embodiment.

[0066] Figure 12 is a bottom view showing a semiconductor device A7 according to the seventh embodiment of this disclosure, and corresponds to Figure 4. The semiconductor device A7 according to this embodiment differs from the semiconductor device A1 according to the first embodiment in the arrangement position of the third lead 3.

[0067] In the seventh embodiment, the third lead 3 is located at the corner on the x-direction x2 side and y-direction y1 side of the semiconductor device A1 when viewed in the z-direction (the lower left corner in Figure 12). In other words, the second lead 2 and the third lead 3 are located on opposite sides of the first lead 1 in the y-direction. The second lead 2 extends across the entire x-direction and has three terminal portions 220. On the other hand, the first lead 1 has a notch formed at the position where the third lead 3 is located, and has two terminal portions 120.

[0068] In this embodiment as well, the first lead 1 and the second lead 2 are exposed from opposite ends in the y-direction of the resin back surface 82. Therefore, the semiconductor device A2 can suppress the occurrence of short circuits compared to the case where the first lead 1 and the second lead 2 are exposed from the same end of the resin back surface 82. Furthermore, since the die pad portion 110 of the first lead 1 is provided with a die pad portion back surface 112 that is exposed from the resin back surface 82, the first lead 1 can dissipate heat generated by the semiconductor element 6 by transferring it to the wiring board. In addition, since the die pad portion back surface 112 of the first lead 1 and the multiple terminal portion back surfaces 122 are spaced apart, and each terminal portion back surface 122 is also spaced apart from each other, the peeling of the first lead 1 from the sealing resin 8 towards the z2 side in the z-direction can be further suppressed. Furthermore, since the second lead 2 has a wide surface where the wire bonding portion main surface 211, the terminal portion main surface 221, and the connecting portion main surface 231 are flush and integrated, it is possible to bond a large number of wires 71. Furthermore, the overall shape of the exposed surface of the second lead 2 from the resin back surface 82 is E-shaped, and the recess 213 on the back side of the wire bonding portion between the three terminal portions 220 is covered by the sealing resin 8, so that the peeling of the second lead 2 from the sealing resin 8 towards the z2 side in the z direction can be further suppressed. Also, since the back surface 212 of the wire bonding portion is a single rectangular shape that is long in the x direction, the area on the main surface 211 of the wire bonding portion in which the wire 71 can be stably bonded is wide. Moreover, according to this embodiment, since the second lead 2 is spread out over the entire x direction, it is possible to bond a larger number of wires 71.

[0069] In this embodiment, the case in which the third lead 3 is located at the corner on the x-direction x2 side of the semiconductor device A1 on the y-direction y1 side has been described, but this is not the only case. For example, the third lead 3 may be located at the corner on the x-direction x1 side of the semiconductor device A1 on the y-direction y1 side (the lower right corner in Figure 12). Also, the third lead 3 may be located at a location other than a corner.

[0070] Figure 13 is a plan view showing a semiconductor device A8 according to the eighth embodiment of this disclosure, and corresponds to Figure 3. In Figure 13, for ease of understanding, the outer shape of the sealing resin 8 is shown by dashed lines (double-dotted lines) through the sealing resin 8. The semiconductor device A8 according to this embodiment differs from the semiconductor device A1 according to the first embodiment in the configuration of the semiconductor element 6.

[0071] In the eighth embodiment, the semiconductor element 6 has the first electrode 61 located on the main surface 6a of the element, rather than on the back surface 6b of the element. The positions of the first electrode 61, the second electrode 62, and the third electrode 63 on the main surface 6a of the element are not limited. The semiconductor device A8 also further includes a plurality of wires 73. The plurality of wires 73 are made of the same material as wires 71 and 72. The plurality of wires 73 are connected to the first electrode 61 of the semiconductor element 6 and to the main surface 121 of the terminal portion of the first lead 1. As a result, the first lead 1 is electrically connected to the first electrode 61 (drain electrode) of the semiconductor element 6 and functions as a drain terminal. In this embodiment, six wires 73 are arranged. The number of wires 73 is not limited. In addition, a metal plate such as Cu may be used instead of the wires 73.

[0072] In this embodiment as well, the first lead 1 and the second lead 2 are exposed from opposite ends in the y-direction of the resin back surface 82. Therefore, the semiconductor device A2 can suppress the occurrence of short circuits compared to the case where the first lead 1 and the second lead 2 are exposed from the same end of the resin back surface 82. Furthermore, since the die pad portion 110 of the first lead 1 is provided with a die pad portion back surface 112 that is exposed from the resin back surface 82, the first lead 1 can dissipate heat generated by the semiconductor element 6 by transferring it to the wiring board. In addition, since the die pad portion back surface 112 of the first lead 1 and the multiple terminal portion back surfaces 122 are spaced apart, and each terminal portion back surface 122 is also spaced apart from each other, the peeling of the first lead 1 from the sealing resin 8 towards the z2 side in the z-direction can be further suppressed. Furthermore, since the second lead 2 has a wide surface where the wire bonding portion main surface 211, the terminal portion main surface 221, and the connecting portion main surface 231 are flush and integrated, it is possible to bond a large number of wires 71. Furthermore, the overall shape of the exposed surface of the second lead 2 from the resin back surface 82 is U-shaped, and the recess 213 on the back side of the wire bonding portion between the two terminal portions 220 is covered by the sealing resin 8, so that the peeling of the second lead 2 from the sealing resin 8 towards the z2 side in the z direction can be further suppressed. In addition, since the back surface 212 of the wire bonding portion is a single rectangular shape that is long in the x direction, the area on the main surface 211 of the wire bonding portion in which the wire 71 can be stably bonded is wide.

[0073] The semiconductor device described herein is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device described herein can be modified in various ways. This disclosure includes the embodiments described in the following appendix.

[0074] Note 1. A switching element, and a semiconductor element having a main surface and a back surface facing opposite directions in the thickness direction, The semiconductor element is mounted on a first lead that conducts electricity to the semiconductor element, A second lead is provided, which is spaced apart from the first lead in a first direction perpendicular to the thickness direction and is conductive to the semiconductor element, A sealing resin covering a portion of the first lead and a portion of the second lead, and the semiconductor element, Equipped with, The sealing resin has a resin back surface facing the same side as the back surface of the element, The resin back surface comprises a first end located on the first side in the first direction, a second end located on the second side in the first direction, a third end located on one side of the second direction perpendicular to the thickness direction and the first direction, and a fourth end located on the other side of the second direction. The first lead is exposed from the first end, but not from the second, third, and fourth ends. A semiconductor device wherein the second lead is exposed from the second end but not from the first, third, and fourth ends. Note 2. The aforementioned first lead is, The die pad portion on which the semiconductor element is mounted, The first lead terminal portion connected to the first side of the die pad portion, Equipped with, The semiconductor device according to Appendix 1, wherein the first lead terminal portion includes a back surface of the first lead terminal portion that is exposed from the back surface of the resin. Note 3. The sealing resin further comprises a first resin side surface connected to the back surface of the resin and positioned on the first side, The first lead terminal portion further comprises a first lead terminal portion end face exposed from the first resin side surface, The semiconductor device as described in Appendix 2, wherein the end face of the first lead terminal portion is flush with the first resin side surface. Note 4. The semiconductor device according to Appendix 2 or 3, wherein the die pad portion includes a die pad portion back surface exposed from the resin back surface. Note 5. The first lead further comprises a first lead second terminal portion connected to the first side of the die pad portion, The semiconductor device according to any one of appendices 2 to 4, wherein the first lead second terminal portion is provided with a back surface of the first lead second terminal portion that is exposed from the back surface of the resin. Note 6. The first lead further comprises a first lead third terminal portion connected to the first side of the die pad portion, The semiconductor device according to Appendix 5, wherein the first lead third terminal portion is provided with a back surface of the first lead third terminal portion that is exposed from the back surface of the resin. Note 7. The second lead is, The joint and, A second lead terminal portion connected to the second side of the joint portion, Equipped with, The semiconductor device according to any one of the appendices 1 to 6, wherein the second lead terminal portion includes a back surface of the second lead terminal portion that is exposed from the back surface of the resin. Note 8. The sealing resin further comprises a second resin side surface connected to the back surface of the resin and located on the second side, The second lead terminal portion further comprises a second lead terminal end face exposed from the second resin side surface, The semiconductor device according to Appendix 7, wherein the end face of the second lead terminal portion is flush with the second resin side surface. Note 9. The semiconductor element and the second lead are further connected to a plurality of wires, The aforementioned joint portion has a joint portion main surface facing the same side as the element main surface, The semiconductor device according to appendix 7 or 8, wherein the plurality of wires are joined to the main surface of the joint. Note 10. The aforementioned joint portion includes a joint portion surface exposed from the resin surface, The semiconductor device described in any of appendices 7 to 9, wherein the back surface of the second lead terminal portion and the back surface of the joint portion are connected. Note 11. The second lead further comprises a second lead second terminal portion connected to the second side of the joint, The second lead second terminal portion includes a back surface of the second lead second terminal portion that is exposed from the back surface of the resin, The semiconductor device described in Appendix 10, wherein the back surface of the second terminal portion of the second lead and the back surface of the joint portion are connected. Note 12. In the first direction, the device further comprises a third lead positioned on the second side of the first lead and providing electrical conductivity to the semiconductor element. The third lead is exposed from the second end, and the semiconductor device is as described in any one of appendices 1 to 11. Note 13. The semiconductor device is a transistor and comprises a first electrode, a second electrode, and a third electrode. The semiconductor device according to Appendix 12, wherein the first electrode is electrically connected to the first lead, the second electrode is electrically connected to the second lead, and the third electrode is electrically connected to the third lead. Note 14. The semiconductor device according to Appendix 13, wherein the first electrode is located on the back surface of the element and is bonded to the first lead by a conductive bonding material. Note 15. The dimensions in the first direction and the dimensions in the second direction are both 1 mm or more and 3 mm or less. A semiconductor device as described in any of the appendices 1 to 14. [Explanation of Symbols]

[0075] A1~A8: Semiconductor device 1: First lead 110: Die pad section 111: Main surface of die pad section 112: Back side of die pad section 113: Recess on the back side of die pad section 120: Terminal section 121: Main surface of terminal section 122: Back side of terminal part 123: End face of terminal part 130: Connecting section 131: Main surface of connecting section 132: Back of the connecting part 133: End face of the connecting part 2: Second lead 210: Wire bonding section 211: Main surface of wire bonding section 212: Back side of wire bonding section 213: Recess on the back side of the wire bonding section 220: Terminal section 221: Main surface of terminal section 222: Back surface of terminal section 223: Terminal end face 230: Connection part 231: Main surface of the connecting part 232: Back surface of the connecting part 233: End face of connecting part 3: Third lead 310: Wire bonding section 311: Main surface of wire bonding section 312: Back side of wire bonding section 313: Recess on the back side of the wire bonding section 320: Terminal section 321: Main surface of terminal section 322: Back surface of terminal section 323: Terminal end face 330: Connection part 331: Main surface of the connecting part 332: Back surface of the connecting part 333: End face of connecting part 6: Semiconductor element 60: Element body 6a: Element main surface 6b: Back surface of element 61: First electrode 62: 2nd electrode 63: 3rd electrode 71, 72, 73: Wire 75: Joining material 8: Sealing resin 81: Main surface of resin 82: Resin back surface 821: First end 822: Second end 823: Third end 824: 4th end 83: Resin side 831: First resin side surface 832: Second resin side surface 833: Third resin side 834: Fourth resin side

Claims

1. A switching element, and a semiconductor element having a main surface and a back surface facing opposite directions in the thickness direction, The semiconductor element is mounted on a first lead that conducts electricity to the semiconductor element, A second lead is provided, which is spaced apart from the first lead in a first direction perpendicular to the thickness direction and is conductive to the semiconductor element, A sealing resin covering a portion of the first lead and a portion of the second lead, and the semiconductor element, Equipped with, The sealing resin has a resin back surface facing the same side as the back surface of the element, The resin back surface comprises a first end located on the first side in the first direction, a second end located on the second side in the first direction, a third end located on one side of the second direction perpendicular to the thickness direction and the first direction, and a fourth end located on the other side of the second direction. The first lead is exposed from the first end, but not from the second, third, and fourth ends. The second lead is exposed from the second end, but not from the first end, the third end, and the fourth end. The first lead comprises a die pad portion on which the semiconductor element is mounted, and a first lead terminal portion connected to the first side of the die pad portion. The die pad portion comprises a die pad portion main surface and a die pad portion back surface facing opposite directions in the thickness direction, and a die pad portion back surface recess that recesses from the die pad portion back surface toward the die pad portion main surface. The back surface of the die pad portion is exposed from the back surface of the resin, The recess on the back side of the die pad portion is covered with the sealing resin. The second lead comprises a joint portion having a joint portion main surface facing the same side as the main surface of the element and to which a plurality of wires electrically connected to the semiconductor element are joined, and a joint portion back surface exposed from the back surface of the resin, and a second lead terminal portion and a second lead second terminal portion connected to the second side of the joint portion and exposed from the back surface of the resin, The second lead terminal portion and the second lead second terminal portion are spaced apart from each other in the second direction. The overall shape of the exposed surface of the second lead from the back surface of the resin is a U-shape with the second side in the first direction open. The joint portion further comprises a recess on the back side of the joint portion that is recessed in the thickness direction from the back surface of the joint portion, The recess on the back side of the joint is located between the second lead terminal portion and the second lead terminal portion when viewed in the thickness direction, and is covered with the sealing resin, in a semiconductor device.

2. The semiconductor device according to claim 1, wherein the first lead terminal portion includes a back surface of the first lead terminal portion that is exposed from the back surface of the resin.

3. The semiconductor device according to claim 2, wherein the back surface of the die pad portion and the back surface of the first lead terminal portion are spaced apart in the first direction.

4. The sealing resin further comprises a first resin side surface connected to the back surface of the resin and positioned on the first side, The first lead terminal portion further comprises a first lead terminal portion end face exposed from the first resin side surface, The semiconductor device according to claim 2 or 3, wherein the end face of the first lead terminal portion is flush with the first resin side surface.

5. The first lead further comprises a first lead second terminal portion connected to the first side of the die pad portion, The semiconductor device according to any one of claims 1 to 4, wherein the first lead second terminal portion includes a back surface of the first lead second terminal portion that is exposed from the back surface of the resin.

6. The first lead further comprises a first lead third terminal portion connected to the first side of the die pad portion, The semiconductor device according to claim 5, wherein the first lead third terminal portion includes a back surface of the first lead third terminal portion that is exposed from the back surface of the resin.

7. The semiconductor device according to any one of claims 1 to 6, wherein the second lead terminal portion includes a back surface of the second lead terminal portion that is exposed from the back surface of the resin.

8. The sealing resin further comprises a second resin side surface connected to the back surface of the resin and located on the second side, The second lead terminal portion further comprises a second lead terminal end face exposed from the second resin side surface, The semiconductor device according to claim 7, wherein the end face of the second lead terminal portion is flush with the second resin side surface.

9. The semiconductor element and the second lead are further connected to a plurality of wires, The semiconductor device according to claim 7 or 8, wherein the plurality of wires are joined to the main surface of the joint.

10. The semiconductor device according to any one of claims 7 to 9, wherein the back surface of the second lead terminal portion and the back surface of the joint portion are connected.

11. The second lead second terminal portion includes a back surface of the second lead second terminal portion that is exposed from the back surface of the resin, The semiconductor device according to claim 10, wherein the back surface of the second terminal portion of the second lead and the back surface of the joint portion are connected.

12. In the first direction, the device further comprises a third lead positioned on the second side of the first lead and providing electrical conductivity to the semiconductor element. The semiconductor device according to any one of claims 1 to 11, wherein the third lead is exposed from the second end.

13. The semiconductor element is a transistor, comprising a first electrode, a second electrode, and a third electrode. The semiconductor device according to claim 12, wherein the first electrode is electrically connected to the first lead, the second electrode is electrically connected to the second lead, and the third electrode is electrically connected to the third lead.

14. The semiconductor device according to claim 13, wherein the first electrode is arranged on the back surface of the element and is bonded to the first lead by a conductive bonding material.

15. The first electrode, the second electrode, and the third electrode are arranged on the main surface of the element. The first electrode and the first lead are electrically connected by a first wire. The second electrode and the second lead are electrically connected by a second wire. The semiconductor device according to claim 13, wherein the third electrode and the third lead are electrically connected by a third wire.

16. The dimension in the first direction and the dimension in the second direction are both between 1 mm and 3 mm. The semiconductor device according to any one of claims 1 to 15.

Images