Semiconductor heat treatment apparatus and its control method

Abstract

The present invention discloses a semiconductor heat treatment apparatus and a control method thereof. The semiconductor heat treatment apparatus includes a process chamber, an intake pipeline, an air supply pipeline, and an exhaust pipeline. One end of the intake pipeline communicates with a gas source, and the other end of the intake pipeline communicates with the air supply pipeline located in the process chamber. The air supply pipeline is parallel to the central axis of the process chamber, and a plurality of air supply holes are provided in the air supply pipeline. Each air supply hole is used to transport process gas into the process chamber. The exhaust pipeline communicates with the process chamber, and a gas storage assembly is provided in the intake pipeline. The gas storage assembly is used to supply process gas to the process chamber through the intake pipeline and the air supply pipeline in sequence when the gas storage amount reaches a first predetermined value. The above technical solution can solve the problem that the concentration of process gas at a position relatively far from the intake pipeline in the process chamber is relatively low during the process step.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to a semiconductor heat treatment apparatus and a control method thereof.

Background Art

[0002] In the semiconductor manufacturing process, a structure such as an insulating layer or a dielectric layer may be formed on the surface of a semiconductor such as a wafer using a process gas. Currently, a plurality of wafers are arranged along a specific direction, for example, the height direction, and accommodated in a process chamber. The process gas supplied from a gas source is supplied into the process chamber through an intake pipeline, and the process gas is deposited on the surfaces of the plurality of wafers. However, due to the influence of process characteristics, in the process of introducing the process gas, the pressure of the process gas is relatively small, and an exhaust pipeline is provided in the process chamber. Therefore, after the process gas is introduced into the process chamber, the concentration of the process gas at a position relatively far from the intake pipeline in the process chamber is relatively low, so that the process results of the wafers located in this region do not meet the requirements.

Summary of the Invention

Problems to be Solved by the Invention

[0003] In order to solve the problem that in the conventional process, the process results of the wafers located in the region where the concentration of the process gas at a position relatively far from the intake pipeline in the process chamber are relatively low and do not meet the requirements, the present invention discloses a semiconductor heat treatment apparatus and a control method thereof.

Means for Solving the Problems

[0004] In order to solve the above problems, the present invention adopts the following technical solutions.

[0005] In a first aspect, the present invention discloses a semiconductor heat treatment apparatus comprising a process chamber, an intake line, a supply line, and an exhaust line, wherein one end of the intake line communicates with a gas source, the other end of the intake line communicates with the supply line located in the process chamber, the supply line is parallel to the central axis of the process chamber, the supply line is provided with a plurality of supply holes, each of which is used to transport process gas into the process chamber, the exhaust line communicates with the process chamber, and a gas storage assembly is provided in the intake line, the gas storage assembly is used to sequentially supply process gas to the process chamber via the intake line and the supply line when the gas storage amount reaches a first predetermined value.

[0006] In a second aspect, the present invention discloses a control method for a semiconductor heat treatment apparatus, which includes the steps of filling the gas storage assembly with gas through the intake pipe and supplying process gas to a process chamber when the amount of gas stored in the gas storage assembly reaches a first predetermined value. [Effects of the Invention]

[0007] The technical solutions used in this invention can achieve the following beneficial effects.

[0008] Embodiments of the present invention disclose a semiconductor heat treatment apparatus, wherein one end of the intake pipe communicates with a gas source and the other end communicates with a supply pipe located in the process chamber, the supply pipe being parallel to the central axis of the process chamber, and the supply pipe being provided with a plurality of supply holes, each of which is used to transport process gas to the process chamber. The process chamber is further connected to an exhaust pipe to ensure the smoothness of the gas passage, and the operating pressure in the process chamber can also be stabilized using the exhaust pipe.

[0009] In the semiconductor heat treatment apparatus described above, a gas storage assembly is provided in the intake pipe. When the amount of process gas stored in the gas storage member reaches a first predetermined value, the gas storage member sequentially supplies process gas to the process chamber via the intake pipe and the supply pipe. Furthermore, the process gas in the gas storage member diffuses relatively quickly through the intake pipe into the supply pipe due to its own pressure action, and because the process gas in the gas storage member has a constant pressure, after the process gas is sent out from the gas storage member, it can move relatively reliably to the supply holes in the supply pipe that are relatively far from the gas storage member. This ensures that relatively uniform process gas is sent out from multiple supply holes in the supply pipe, and that the processing results of any wafer all meet the process requirements.

[0010] The drawings described herein are used to further understand the present invention and constitute part of the present invention, and exemplary embodiments and descriptions of the present invention are used to illustrate the present invention and do not unduly limit the present invention. [Brief explanation of the drawing]

[0011] [Figure 1] This is a schematic diagram of the structure of a semiconductor heat treatment apparatus disclosed in the embodiments of the present application. [Figure 2] This is a schematic diagram of the structure of the air supply pipeline in the semiconductor heat treatment apparatus disclosed in the embodiments of the present application. [Figure 3] This is a schematic diagram of another structure of the air supply pipeline in the semiconductor heat treatment apparatus disclosed in the embodiments of the present application. [Figure 4] This is a schematic diagram of the structure of a gas storage member in a semiconductor heat treatment apparatus disclosed in the embodiments of the present application. [Figure 5] This is another schematic diagram of the gas storage member in the semiconductor heat treatment apparatus disclosed in the embodiments of the present application. [Figure 6] This is a flowchart of the control method for a semiconductor heat treatment apparatus disclosed in the embodiments of the present application. [Modes for carrying out the invention]

[0012] To further clarify the object, technical solution, and advantages of the present invention, the technical solution of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It is clear that the embodiments described are only some embodiments of the present invention, and not all embodiments. Any other embodiments that can be obtained by those skilled in the art without creative effort based on the embodiments of the present invention are all within the scope of protection of the present invention.

[0013] The technical solutions disclosed in each embodiment of the present invention will be described in detail below with reference to the drawings.

[0014] As shown in Figures 1 to 5, embodiments of the present invention disclose a semiconductor heat treatment apparatus that can be used to interact a wafer 900 with a process gas and to deposit the process gas on the surface of the wafer 900. Specifically, the semiconductor heat treatment apparatus includes an intake line, an exhaust line 130, a supply line 140, a process chamber 210, and a gas storage assembly. Here, a gas storage assembly is provided in the intake line, and for the sake of facilitating the following explanation, the intake line is divided into an intake segment 110 and a communication segment 120, and the gas storage assembly has a gas storage stage and a gas discharge stage, and to ensure that the gas storage assembly can switch between the gas storage stage and the gas discharge stage, the gas storage assembly may include a gas storage member 310, a first valve 410, and a second valve 420.

[0015] Here, the process chamber 210 can provide a process environment and accommodation space for processing the wafer 900, and process gas can be supplied into the process chamber 210 to interact with the wafer 900. During the processing of the wafer 900, multiple semiconductors such as wafers 900 can be accommodated in the process chamber 210, and the multiple wafers 900 can be arranged in a regular pattern. Specifically, the multiple wafers 900 can be distributed along the height direction of the process chamber 210. Naturally, in order to ensure that the process gas can be deposited on the surface of any of the wafers 900, it is necessary to leave a gap between any two adjacent wafers 900 in advance. Furthermore, a mounting mechanism may be provided in the process chamber 210 to mount the multiple wafers 900 using the mounting mechanism, and the mounting mechanism may specifically be a boat.

[0016] The process gas may be supplied using a gas source, which may specifically be a gas storage device. Considering the safety of the process gas used in semiconductor processing, the gas source may also be a gas supply pipeline to prevent security risks caused by the process gas being under relative high pressure for extended periods.

[0017] In the process gas transport process, one end of the intake segment 110 of the intake pipeline can be connected to a gas source, and the other end of the intake segment 110 can be connected to a gas storage member 310, and the process gas can be transported through the intake segment 110 into the gas storage member 310. Specifically, the intake segment 110 may be formed from a metal material such as stainless steel, which also prevents the interaction between the process gas and the intake segment 110 from adversely affecting the process. Both the gas source and the gas storage member 310 can communicate with each other via connecting devices such as connecting fittings and gaskets, and it is ensured that a relatively secure sealed connection relationship is formed between the intake segment 110 and the gas source, and between the intake segment 110 and the gas storage member 310. Furthermore, parameters such as the length and flow rate of the intake segment 110 can be determined according to actual needs and are not limited thereto.

[0018] Furthermore, the first valve 410 is provided in the intake segment 110 of the intake line to control the communication and shut-off state between the intake segment 110 and the gas storage member 310. That is, the first valve 410 is provided in the portion of the intake line located upstream of the gas storage member 310. When the first valve 410 is closed, the intake segment 110 and the gas storage member 310 are shut off, and process gas output from the gas source cannot be transported from the intake segment 110 into the gas storage member 310. Correspondingly, when the first valve 410 is open, the intake segment 110 and the gas storage member 310 are in communication with each other, and process gas output from the gas source can pass through the intake segment 110 and be transported into the gas storage member 310. Specifically, the first valve 410 may be a solenoid valve or a pneumatic valve, etc.

[0019] As described above, the process chamber 210 can provide a process environment for the wafer 900. Based on this, in order to ensure that the process gas can be transported into the process chamber 210 and the process gas can be transported relatively uniformly to the area where the plurality of wafers 900 are located, optionally, the air supply pipeline 140 is provided in the process chamber 210, whereby the process gas is transported to different areas of the process chamber 210 using the air supply pipeline 140. Also, in order to ensure as much as possible that the air supply pipeline 140 can transport the process gas to any position in the process chamber 210, the air supply pipeline 140 may be arranged parallel to the central axis of the process chamber 210. Here, the central axis of the process chamber is the height direction of the process chamber 210 and is also the arrangement direction of the wafers 900 in the process chamber 210.

[0020] More specifically, a plurality of air supply holes 141 may be provided in the air supply pipeline 140. Each air supply hole 141 is used to transport the process gas into the process chamber 210. The plurality of air supply holes 141 are distributed along the arrangement direction of the plurality of wafers 900 accommodated in the process chamber 210. Thereby, the air supply area formed by the plurality of air supply holes 141 can correspond to the area where semiconductors such as the plurality of wafers 900 are located. Furthermore, the air supply pipeline 140 can cover the area where the plurality of wafers 900 are located as much as possible, so that the process gas can act on any of the wafers 900.

[0021] As shown in FIG. 1, the gas storage member 310 communicates with one end of the air supply pipeline 140 through the communication segment 120 of the intake pipeline, thereby ensuring that the process gas in the gas storage member 310 can pass through the communication segment 120 and the air supply pipeline 140 and be transported into the process chamber 210. The communication segment 120 may also be formed using a material such as metal, and a sealed connection relationship is formed between the gas storage member 310, the air supply pipeline 140, and the communication segment 120.

[0022] Of course, in order for the process gas in the gas storage member 310 to be controlled and transported into the process chamber 210, as shown in FIG. 1, the second valve 420 is provided in the communication segment 120. That is, the second valve 420 is provided in a portion of the intake pipeline that is downstream of the gas storage member 310. Further, the communication and cutoff relationship between the gas storage member 310 and the process chamber 210 is controlled by using the opening and closing of the second valve 420. Specifically, when the second valve 420 is in the open state, the process gas in the gas storage member 310 is transported into the process chamber 210 through the communication segment 120. When the second valve 420 is in the closed state, the process gas in the gas storage member 310 is not transported into the process chamber 210. Here, the second valve 420 may be an electromagnetic valve or a pneumatic valve.

[0023] In addition, in order to discharge the exhaust gas generated during the process step and after the process is completed outside the process chamber 210, in the semiconductor heat treatment apparatus disclosed in the embodiments of the present application, the process chamber 210 is further connected to one end of the exhaust pipeline 130, and the other end of the exhaust pipeline 130 is arranged to communicate with the exhaust gas treatment apparatus 600. Further, during the process step, when the pressure in the process chamber 210 exceeds a predetermined pressure range, the exhaust gas treatment apparatus 600 can suck the gas in the process chamber 210, thereby reducing the pressure in the process chamber 210 within a predetermined pressure range and improving the process effect. Of course, after the process step is completed, the exhaust gas treatment apparatus 600 can suck and discharge the exhaust gas in the process chamber 210.

[0024] To minimize the adverse effects of exhaust gas in the exhaust pipe 130 on the process steps carried out in the process chamber 210, a second pressure regulating valve 450 may be optionally provided in the exhaust pipe 130, which provides communication and shutoff between the exhaust gas treatment device 600 and the process chamber 210. Furthermore, to more accurately know the specific pressure situation inside the process chamber 210, a second pressure detection member 520 may also be provided in the exhaust pipe 130, which is positioned between the process chamber 210 and the second pressure regulating valve 450 so as to determine whether the pressure inside the process chamber 210 meets a predetermined pressure range. If the pressure inside the process chamber 210 exceeds the predetermined pressure range, the second pressure regulating valve 450 is used to adjust the pressure inside the process chamber 210, ensuring that the operating pressure inside the process chamber 210 is always within the predetermined pressure range and improving process efficiency.

[0025] Based on the above semiconductor heat treatment apparatus, in the process where it is necessary to perform a process, first, multiple wafers 900 may be placed in the process chamber 210, and the process environment in the process chamber 210 may be treated by the exhaust pipe 130 and the exhaust gas treatment apparatus 600 so that the process environment in the process chamber 210 satisfies the process requirements. Next, the first valve 410 may be opened and the second valve 420 may be closed so that the process gas supplied from the gas source passes through the intake segment 110 and is transported into the gas storage member 310 for storage. As the process gas is constantly transported into the gas storage member 310, the pressure of the process gas in the gas storage member 310 increases. Based on parameters such as the number and size of wafers 900 in the process chamber 210, and taking into account the specific type of process, the amount of process gas required when multiple wafers 900 are performing the corresponding process can be obtained. Subsequently, when the amount of process gas stored in the gas storage member 310 reaches a first predetermined value, the first valve 410 is closed and the second valve 420 is opened. As a result, the process gas stored in the gas storage member 310 is transported relatively quickly through the communication segment 120 by its own pressure and into the air supply pipeline 140, and then sent into the process chamber 210 from multiple air supply holes 141 in the air supply pipeline 140. Naturally, to ensure that the process gas sent from the gas storage member 310 through the communication segment 120 into the air supply pipeline 140 all have relatively high pressures, thereby ensuring that the air pressure at any of the air supply holes 141 in the air supply pipeline is approximately the same, and further ensuring that the amount of process gas sent from the air supply pipeline 140 to any position in the process chamber 210 is uniform, the amount of gas stored in the gas storage member 310 may be controlled, and if the air pressure inside the gas storage member 310 is slightly greater than or equal to the air pressure inside the process chamber 210, the gas storage member 310 may be controlled to stop supplying gas to the process chamber via the second valve 420.

[0026] Specifically, the amount of process gas transported into the gas storage member 310 within a predetermined time by the intake segment 110 can be measured using a device such as a flow meter, or, when storing a sufficient amount of process gas in the gas storage member 310 based on parameters such as the type of process gas and the volume of the gas storage member 310, parameters such as the pressure of the process gas in the gas storage member 310 can be obtained. Furthermore, the amount of process gas stored in the gas storage member 310 can be indirectly obtained by detecting the pressure of the process gas in the gas storage member 310 using a pressure detection member.

[0027] Embodiments of the present invention disclose a semiconductor heat treatment apparatus in which one end of an intake pipe communicates with a gas source and the other end communicates with a supply pipe located in a process chamber. Specifically, the gas source communicates with a gas storage member 310 via an intake segment 110 of the intake pipe, and the gas storage member 310 communicates with a supply pipe 140 located in a process chamber 210 via a communication segment 120 of the intake pipe. The supply pipe 140 is parallel to the central axis of the process chamber 210 and is provided with a plurality of supply holes 141, each of which is used to transport process gas to the process chamber 210. To ensure smooth gas passage, the process chamber 210 can also be connected to an exhaust pipe 130, and the operating pressure in the process chamber 210 can be stabilized using the exhaust pipe 130.

[0028] In the semiconductor heat treatment apparatus described above, when the amount of process gas stored in the gas storage member 310 reaches a first predetermined value, the gas storage member 310 sequentially supplies process gas to the process chamber 210 via the intake pipe and the supply pipe 140. Furthermore, the process gas in the gas storage member 310 diffuses relatively quickly through the communication segment 120 into the supply pipe 140 due to its own pressure action. Because the process gas in the gas storage member 310 maintains a constant pressure, after the process gas is discharged from the gas storage member 310, it can move relatively reliably to the supply holes 141 in the supply pipe 140 that are relatively far from the gas storage member 310. This ensures that relatively uniform process gas is discharged from multiple supply holes 141 in the supply pipe 140, ensuring that the process results of any wafer 900 all meet the process requirements.

[0029] As described above, the amount of process gas stored in the gas storage member 310 can be obtained by measuring the flow rate or pressure. In a specific embodiment, the semiconductor heat treatment apparatus further includes a first pressure detection member 510, which is provided in the intake line and located between the first valve 410 and the gas storage member 310, that is, in the intake segment 110 of the intake line. The first pressure detection member 510 is used to detect the gas in the gas storage member 310. Specifically, the first pressure detection member 510 may be a pressure gauge or a pressure sensor, and when parameters such as the volume of the gas storage member 310 and the type of process gas are known, the amount of process gas stored in the gas storage member 310 can be indirectly obtained based on the measurement value of the first pressure detection member 510.

[0030] In another embodiment of the present invention, the semiconductor heat treatment apparatus further includes a mass flow controller 530, which is mounted on the intake segment 110, and the mass flow controller 530 can more accurately obtain the amount of process gas that has passed through the intake segment 110 and been transported into the gas storage member 310 within a predetermined time, thereby improving the accuracy of the measurement of the amount of process gas in the gas storage member 310.

[0031] To further improve the accuracy of the measurement of the amount of process gas in the gas storage member 310, the first pressure detection member 510 and the mass flow controller 530 may be optionally installed simultaneously in the semiconductor heat treatment apparatus, thereby acquiring the amount of process gas stored in the gas storage member 310 in various dimensions and maximizing the accuracy of the measurement.

[0032] To further facilitate control over the process gas transport process, the semiconductor heat treatment apparatus optionally further includes a third valve 430, which is installed between the first valve 410 and the mass flow controller 530, and the third valve 430 may be closed when it is not necessary to transport the process gas, thereby improving the safety of process gas transport.

[0033] The semiconductor heat treatment apparatus may further include a first pressure regulating valve 440, which is attached to the intake segment 110 and located between the mass flow controller 530 and the gas source. When it is necessary to transport process gas to the semiconductor heat treatment apparatus during the process, the first pressure regulating valve 440 adjusts the transport pressure of the process gas within the intake segment 110, thereby improving the transport stability of the process gas.

[0034] To further improve the uniformity of the amount of process gas transported to each of the multiple wafers 900 in the process chamber 210, the structure and / or arrangement of the air supply holes 141 in the air supply pipeline 140 can be designed so that the amount of process gas transported to any one of the wafers 900 is approximately the same.

[0035] Selectively, as shown in Figure 2, the multiple air intake holes 141 are distributed along the central axis of the process chamber 210, and the air intake cross-sectional area of ​​the multiple air intake holes 141 is gradually increased along the air intake direction of the air intake line 140 (indicated by the arrow in Figure 2), that is, the air intake cross-sectional area of ​​each air intake hole 141 is different, and the further away from the communication segment 120 the air intake cross-sectional area of ​​the air intake hole 141 is larger. Here, the air intake cross-sectional area of ​​the air intake hole 141 is the area of ​​the cross section perpendicular to the axial direction of the air intake hole 141, and it can represent the air intake capacity of the air intake hole 141, with the larger the air intake cross-sectional area, the stronger the air intake capacity of the air intake hole 141. When using such a technical solution, even if there is a pressure difference at different air inlet holes 141 of the process gas, the area of ​​the air inlet holes 141 that are further away from the gas storage member 310 is relatively larger. This compensates for the negative impact on the gas discharge rate of the air inlet holes 141 due to the relatively lower pressure at those air inlet holes 141 that are further away from the gas storage member 310, thereby ensuring that the gas discharge rates of each of the multiple air inlet holes 141 are approximately the same as much as possible. Furthermore, when using the above technical solution, the pitch between any two adjacent air inlet holes 141 can be made equal.

[0036] As shown in Figure 3, in another embodiment of the present application, the multiple air supply holes 141 are distributed along the central axis of the process chamber 210, and the pitch between any two adjacent air supply holes 141 in the multiple air supply holes 141 gradually decreases along the air supply direction of the air supply pipeline 140 (indicated by the arrow in Figure 3). That is, in the process of arranging the air supply holes 141 in the air supply pipeline 140, the air supply holes 141 become more densely packed the further away they are from the communication segment 120, and further improving the degree of density of the air supply holes 141 compensates for the negative effect of the air pressure in the air supply holes 141 being relatively low due to the large distance between the air supply holes 141 and the gas storage member 310 in that region, thereby ensuring that the amount of process gas transported to any of the multiple wafers 900 is approximately the same. In addition, in the semiconductor heat treatment apparatus disclosed in the embodiment of the present application, the radius of any of the air supply holes 141 may be made the same to reduce the difficulty of processing the air supply holes 141.

[0037] In another embodiment of the present invention, the multiple air intake holes 141 are distributed along the central axis of the process chamber 210, and the air intake cross-sectional area of ​​the multiple air intake holes 141 is gradually increased along the air intake direction of the air intake line 140, and the pitch between any two adjacent air intake holes 141 is gradually decreased, in order to maximize the uniformity of the air intake volume of the multiple air intake holes 141. Naturally, in practical applications, the specific parameters of the air intake cross-sectional area of ​​the air intake holes 141 and the pitch between the air intake holes 141 can be adaptively adjusted to ensure as much as possible that the air intake volumes of the multiple air intake holes 141 are nearly identical.

[0038] As described above, the gas storage member 310 can store process gas, thereby pressurizing the process gas within the gas storage member 310, improving the diffusion capacity and diffusion rate of the process gas, and further improving the uniformity of the process gas in different regions within the process chamber 210. Based on this, in order to improve the storage and release performance of the gas storage member 310 for process gas, the gas storage member 310 optionally includes a first buffer segment 311, a straight segment 312, and a second buffer segment 313 connected in series in order along its intake direction (i.e., from left to right as shown in Figures 4 and 5), and the three together constitute the gas storage member 310. In the process of assembling the gas storage member 310, one end of the intake segment 110 is used to communicate with the gas source, the other end of the intake segment 110 is used to communicate with one end of the first buffer segment 311 away from the straight segment 312, and one end of the second buffer segment 313 away from the straight segment 312 is Connecting segment 120 One end of the communication segment 120 is connected to the air supply pipe 140, and the other end of the communication segment 120 is connected to the air supply pipe 140.

[0039] Specifically, in order to improve the gas storage performance of the gas storage member 310, the first buffer segment 311, the second buffer segment 313, and the straight segment 312 may all be formed using materials with relatively high structural strength, such as metal. Furthermore, the first buffer segment 311 and the second buffer segment 313 and the straight segment 312 may be fixedly connected by welding or the like, and in order to improve the reliability of the connection between the three, the first buffer segment 311, the straight segment 312, and the second buffer segment 313 may be optionally formed by integral molding.

[0040] Furthermore, along the intake direction of the gas storage member 310, the cross-sectional area of ​​the first buffer segment 311 perpendicular to the intake direction (i.e., the left-to-right direction shown in Figures 4 and 5) gradually increases, and the cross-sectional area of ​​the second buffer segment 313 perpendicular to the intake direction (i.e., the left-to-right direction shown in Figures 4 and 5) gradually decreases. In this way, the structures of both the first buffer segment 311 and the second buffer segment 313 become relatively gentler, allowing the gas to gradually diffuse after entering the gas storage member 310 from the first buffer segment 311, thereby reducing the difficulty of gas transport. As the gas is sent from the second buffer segment 313 through the connecting segment 120 to the supply pipeline 140, it is gradually compressed and rectified in the second buffer segment 313, improving the diffusion rate and diffusion effect of the process gas.

[0041] Furthermore, if both the first buffer segment 311 and the second buffer segment 313 have relatively gentle structures, it is possible to prevent as much as possible from being obstructed when the process gas flows through the gas storage member 310, thereby improving the flow capacity of the process gas. In response to this, in order to further prevent obstruction when the process gas flows from the first buffer segment 311 to the second buffer segment 313, the projection of the straight segment 312 along the intake direction may be the same as the cross-sectional shape of the straight segment 312 perpendicular to the intake direction. That is, the entire straight segment 312 is a linear structure, which prevents the process gas from being obstructed by the straight segment 312 when it flows through the gas storage member 310, thereby ensuring the smooth flow of the process gas.

[0042] More specifically, the straight segment 312 may be a cylindrical structure, and correspondingly, the end faces connected to both the first buffer segment 311 and the second buffer segment 313 are also circular in shape. This further improves the fluidity of the process gas within the gas storage member 310, prevents the process gas from accumulating at the corners of the gas storage member 310, and improves the utilization rate of the process gas.

[0043] As described above, in the semiconductor heat treatment apparatus disclosed in the embodiments of the present application, the first buffer segment 311 and the intake segment 110, and the second buffer segment 313 and the communication segment 120 are both connected using connecting joints and gaskets, thereby providing good sealing performance between the members. In another embodiment of the present application, the gas storage member 310 and the intake segment 110, and / or the gas storage member 310 and the communication segment 120 may both be sealed together via a vacuum coupling radial seal joint 320 (i.e., a VCR joint, Vacuum Coupling Radius Seal). The vacuum coupling radial seal joint 320 ensures relatively high sealing performance between the gas storage member 310 and the intake segment 110, and between the gas storage member 310 and the communication segment 120, further preventing leakage of process gas and improving process safety. Naturally, the connections between two interconnected components, such as between the communication segment 120 and the air supply line 140, and between the process chamber 210 and the exhaust line 130, may also be made via vacuum connection radial seal joints 320, ensuring relatively high connection reliability and sealing performance between any two arbitrarily connected components in the semiconductor heat treatment apparatus.

[0044] Furthermore, the joint connecting member 330 can be used to auxiliaryly connect the gas storage member 310 and the vacuum connection radial seal joint 320. Specifically, by inserting the vacuum connection radial seal joint 320 into the joint connecting member 330 and then welding the end of the gas storage member 310 to the joint connecting member 330, the vacuum connection radial seal joint 320 and the gas storage member 310 can be connected as a single unit.

[0045] Thus, the semiconductor heat treatment apparatus may include a mounting mechanism so that all of the multiple wafers 900 can be mounted on the mounting mechanism. To further improve the uniformity of the amount of process gas deposited on any of the wafers 900, the semiconductor heat treatment apparatus disclosed in the embodiments of the present application may optionally further include a rotating mechanism 220, which may specifically be a rotary motor or the like. The rotating mechanism 220 is attached to the process chamber 210, and the mounting mechanism is provided in the process chamber 210 and attached to the rotating mechanism 220, so that the rotating mechanism 220 can drive the mounting mechanism to rotate, specifically in a direction that surrounds the arrangement direction of the multiple wafers 900.

[0046] For example, multiple wafers 900 may be arranged along the height direction of the process chamber 210, so that the rotation mechanism 220 can drive the mounting mechanism to rotate it in a direction that surrounds the height direction of the process chamber 210, that is, to rotate the mounting mechanism in the horizontal plane. The rotation mechanism 220 rotates the wafers 900 relative to the air supply holes 141 of the air supply line 140, thereby ensuring that the amount of process gas deposited at any position on the wafers 900 is relatively uniform and improving the process effect of the wafers 900.

[0047] In order to ensure that process gas can be transported from the gas source into the gas storage member 310, it is necessary to maintain a certain pressure in the process gas during the transport process, that is, the process gas in the supply pipe 140 also has a certain pressure. Furthermore, gases are prone to liquefaction when subjected to pressure, and some types of process gases have a certain viscosity after liquefaction, which is disadvantageous to the progress of process gas transport operations. Accordingly, the pressure of the process gas in the gas storage member 310 is relatively high, and based on this, the semiconductor heat treatment apparatus disclosed in the embodiment of the present application further includes a first heating mechanism and a second heating mechanism, the first heating mechanism being provided in the heating pipe and heating the intake segment 110 to a first predetermined temperature, and the second heating mechanism being provided in the gas storage member 310 and heating the gas storage member 310 to a second predetermined temperature. The combined action of the first and second heating mechanisms relatively increases the difficulty of liquefaction of the process gas in the intake segment 110 and the gas storage member 310, further preventing liquefaction during transport and improving the transport efficiency of the process gas.

[0048] Furthermore, since the pressure of the process gas in the gas storage member 310 is greater than the pressure of the process gas in the intake segment 110, the second predetermined temperature may be set higher than the first predetermined temperature to ensure that the process gas in the gas storage member 310 hardly liquefies. Specifically, both the first heating mechanism and the second heating mechanism may be heating devices such as heating wires, and the first heating mechanism may cover the outside of the intake segment 110 to provide a heating effect to the intake segment 110. Correspondingly, the second heating mechanism may cover the outside of the gas storage member 310 to provide a heating effect to the gas storage member 310, and the difficulty of such an arrangement is relatively small. The specific values ​​of the first predetermined temperature and the second predetermined temperature should be determined according to the actual type of process gas. Taking SiH2Cl2 as an example, the first predetermined temperature may be 40°C, and the second predetermined temperature may be 120-150°C.

[0049] Based on the semiconductor heat treatment apparatus described above, embodiments of the present application further disclose a control method for a semiconductor heat treatment apparatus, and control any of the above semiconductor heat treatment apparatuses using the control method. As shown in Figure 6, the control method includes step S1 of filling a gas storage assembly with gas through an intake pipe.

[0050] In other words, after the process has started, by connecting the portion of the intake line located between the gas source and the gas storage member 310 (i.e., the intake segment 110), the process gas output from the gas source can be temporarily stored in the gas storage member 310 of the gas storage assembly, and the process gas can generate pressure within the gas storage member 310.

[0051] A control method for a semiconductor heat treatment apparatus disclosed in an embodiment of the present application further includes, after step S1, step S2 of supplying process gas to the process chamber 210 when the amount of gas stored in the gas storage assembly reaches a first predetermined value.

[0052] Specifically, based on parameters such as the number and size of wafers 900 in the process chamber 210, and taking into account the specific type of process, the amount of process gas required when multiple wafers 900 are performing the corresponding process can be obtained. Subsequently, when the amount of process gas stored in the gas storage member 310 reaches a first predetermined value, the first valve 410 is closed and the second valve 420 is opened. As a result, the process gas stored in the gas storage member 310 is transported relatively quickly through the communication segment 120 by its own pressure and into the air supply pipeline 140. It is then sent into the process chamber 210 from multiple air supply holes 141 in the air supply pipeline 140, completing the process gas transport operation and ensuring that the gas discharge amounts corresponding to multiple wafers 900 in the air supply pipeline 140 are basically the same, thereby improving the uniformity of the process results.

[0053] Furthermore, during use of the semiconductor heat treatment apparatus disclosed in the embodiments of this application, a specific value of the first predetermined value of the process gas in the gas storage member 310 can be tested. Specifically, a specific value can be set for the first predetermined value of the process gas in the gas storage member 310. Subsequently, the semiconductor heat treatment apparatus can be controlled to perform the corresponding air supply operation using the control method disclosed in the embodiments of this application. After that, the tested wafers 900 can complete the deposition process, etc., and the thickness and uniformity of the deposited layer on all wafers 900 can be detected to obtain the correspondence between the first predetermined value and the process results. Subsequently, by changing the specific value of the first predetermined value, the deposition process can be completed on the wafers 900 in the corresponding manner, multiple sets of corresponding data can be obtained, and based on the multiple sets of corresponding data, the correspondence between the first predetermined value of the amount of process gas stored in the gas storage member 310 and specific parameters such as the size and quantity of wafers 900 can be obtained. During subsequent use of the semiconductor heat treatment apparatus, the specific size of the first predetermined value is determined based on the aforementioned correspondence and parameters such as the number and size of the wafers 900 to be processed, thereby ensuring that the process efficiency of the wafers 900 is relatively high.

[0054] In some selectable embodiments, the control method further includes the steps of heating the intake segment 110 to a first predetermined temperature and heating the gas storage assembly to a second predetermined temperature, wherein the second predetermined temperature is higher than the first predetermined temperature.

[0055] In order to ensure that process gas can be transported from the gas source into the gas storage member 310, it is necessary to maintain a certain pressure in the process gas during the transport process, that is, the process gas in the supply pipe 140 also has a certain pressure. Furthermore, gas is prone to liquefaction when subjected to pressure, and some types of process gas have a certain viscosity after liquefaction, which is disadvantageous to the progress of process gas transport. Accordingly, the pressure of the process gas in the gas storage member 310 is relatively high, and based on this, the embodiment of the present application heats the intake segment 110 to a first predetermined temperature and the gas storage member 310 to a second predetermined temperature, thereby relatively increasing the difficulty of liquefaction of the process gas in the intake segment 110 and the gas storage member 310, and further minimizes the occurrence of liquefaction during process gas transport, thereby improving the transport efficiency of process gas.

[0056] Furthermore, since the pressure of the process gas in the gas storage member 310 is greater than the pressure of the process gas in the intake segment 110, the second predetermined temperature may be set higher than the first predetermined temperature to ensure that the process gas in the gas storage member 310 hardly liquefies. The specific values ​​of the first predetermined temperature and the second predetermined temperature can be determined according to the actual type of process gas. For example, if the process gas is SiH2Cl2, the first predetermined temperature may be 40°C and the second predetermined temperature may be 120-150°C.

[0057] In the above embodiments of the present invention, the differences between each embodiment have been mainly described. However, any combination of the different preferred features of each embodiment may be used to construct a superior embodiment, as long as they do not contradict each other. For the sake of brevity, such a description is omitted here.

[0058] The above are merely embodiments of the present invention and do not limit it. Those skilled in the art will know that the present invention can be modified and altered in various ways. All modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention are all included within the scope of the claims of the present invention. [Explanation of Symbols]

[0059] 110 Intake Segment 120 interconnected segments 130 Exhaust pipe 140 Air supply line 141 Air intake vent 210 process chambers 220 Rotation Mechanism 310 Gas storage component 311 First buffer segment 312 Straight Segment 313 Second buffer segment 320 Vacuum connection radial seal fitting 330 Joint connection member 410 First valve 420 Second valve 430 Third valve 440 First pressure regulating valve 450 Second pressure regulating valve 510 First pressure detection member 520 Second pressure detection member 530 Mass Flow Controller 600 Exhaust gas treatment device 900 wafers

Claims

1. A semiconductor heat treatment apparatus comprising a process chamber, an intake line, a supply line, and an exhaust line, wherein one end of the intake line communicates with a gas source, the other end of the intake line communicates with the supply line located in the process chamber, the supply line is parallel to the central axis of the process chamber, the supply line is provided with a plurality of supply holes, each of which is used to transport process gas into the process chamber, and the exhaust line communicates with the process chamber, A gas storage assembly is provided in the intake line, and the gas storage assembly is used to supply process gas to the process chamber via the intake line and the supply line in sequence when the amount of gas stored reaches a first predetermined value. A semiconductor heat treatment apparatus further comprising a first heating mechanism and a second heating mechanism, wherein the intake line includes an intake segment located upstream of the gas storage assembly and a communication segment located downstream of the gas storage assembly, the first heating mechanism is provided in the intake segment and used to heat the intake segment to a first predetermined temperature, and the second heating mechanism is provided in the gas storage assembly and used to heat the gas storage assembly to a second predetermined temperature, wherein the second predetermined temperature is higher than the first predetermined temperature.

2. The semiconductor heat treatment apparatus according to claim 1, characterized in that the plurality of air supply holes are distributed along the central axis, and the air supply cross-sectional area of ​​the plurality of air supply holes gradually increases along the air supply direction of the air supply pipe.

3. The semiconductor heat treatment apparatus according to claim 1, characterized in that the plurality of air supply holes are distributed along the central axis, and the pitch between any two adjacent air supply holes in the plurality of air supply holes gradually decreases along the air supply direction of the air supply pipe.

4. The gas storage assembly includes a gas storage member, a first valve, and a second valve, wherein the first valve is provided in the portion of the intake line located upstream of the gas storage member, and the second valve is provided in the portion of the intake line located downstream of the gas storage member. The intake line includes an intake segment and a communication segment, the gas storage member includes a first buffer segment, a straight segment and a second buffer segment connected in series in order along the intake direction, one end of the intake segment is used to communicate with the gas source, the other end of the intake segment communicates with one end of the first buffer segment away from the straight segment, one end of the second buffer segment away from the straight segment communicates with one end of the communication segment, and the other end of the communication segment communicates with the supply line. Along the intake direction of the gas storage member, the cross-sectional area of ​​the first buffer segment perpendicular to the intake direction gradually increases, and the cross-sectional area of ​​the second buffer segment perpendicular to the intake direction gradually decreases. The semiconductor heat treatment apparatus according to claim 1, characterized in that the projection of the straight segment along the intake direction is the same as the cross-sectional shape of the straight segment perpendicular to the intake direction.

5. The semiconductor heat treatment apparatus according to claim 4, characterized in that the first buffer segment and the intake segment, and the second buffer segment and the communication segment are both sealed together by a vacuum connection radial seal joint.

6. The semiconductor heat treatment apparatus according to claim 1, further comprising a first pressure detection member for detecting the atmospheric pressure within the gas storage assembly.

7. The semiconductor heat treatment apparatus according to claim 1, further comprising a mass flow controller attached to the intake line.

8. The semiconductor heat treatment apparatus according to claim 1, further comprising a mounting mechanism and a rotating mechanism, wherein the rotating mechanism is attached to the process chamber, the mounting mechanism is provided in the process chamber and attached to the rotating mechanism, the rotating mechanism is used to drive the mounting mechanism to rotate it around its central axis, and the mounting mechanism is used to mount a plurality of wafers.

9. The steps include filling the gas storage assembly with gas through the intake line, A control method for a semiconductor heat treatment apparatus, which includes the step of supplying process gas to a process chamber when the amount of gas stored in the gas storage assembly reaches a first predetermined value, The semiconductor heat treatment apparatus further includes a first heating mechanism and a second heating mechanism, the intake line includes an intake segment located upstream of the gas storage assembly and a communication segment located downstream of the gas storage assembly, the first heating mechanism is provided in the intake segment and used to heat the intake segment to a first predetermined temperature, and the second heating mechanism is provided in the gas storage assembly and used to heat the gas storage assembly to a second predetermined temperature. The control method described above is The method further includes the steps of heating the intake segment to a first predetermined temperature and heating the gas storage assembly to a second predetermined temperature. A control method for a semiconductor heat treatment apparatus, characterized in that the second predetermined temperature is higher than the first predetermined temperature.

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