Generation of inter-die interconnects using crossover dies and through-die vias

Abstract

The semiconductor package includes a first die, a second die, and an interconnect die coupled to a first plurality of through-die vias in the first die and a second plurality of through-die vias in the second die, the interconnect die providing a communication path between the first die and the second die.

Description

Background Art

[0001] A system-on-a-chip (SoC) integrates multiple functional blocks into a single integrated circuit. For example, an SoC may include one or more processor cores, a memory interface, a network interface, an optical interface, a digital signal processor, a graphics processor, telecommunications components, and the like. Conventionally, each of the blocks is generated within one monolithic die. However, for various reasons such as increasing the yield of functional chips or reducing the design complexity and cost, it is becoming increasingly common to separate these blocks into individual dies and reconfigure them into a package. To achieve the efficiency and performance of a monolithic die, these individual dies must be highly interconnected. As the die size shrinks and / or the number of input / output pins increases, it is becoming increasingly difficult to scale this connectivity.

Brief Description of the Drawings

[0002] [Figure 1] FIG. 13 is a block diagram of an exemplary semiconductor package architecture for generating inter-die interconnects using crossover dies and through-die vias, according to an embodiment of the present disclosure. [Figure 2] FIG. 16 is a block diagram of an exemplary semiconductor package for generating inter-die interconnects using crossover dies and through-die vias, according to some embodiments of the present disclosure. [Figure 3A] FIG. 19 is a diagram showing a part of an exemplary process flow for generating inter-die interconnects using crossover dies and through-die vias, according to some embodiments. [Figure 3B] FIG. 22 is a diagram showing a part of an exemplary process flow for generating inter-die interconnects using crossover dies and through-die vias, according to some embodiments. [Figure 3C]This figure shows a portion of an exemplary process flow for generating inter-die interconnections using crossover dies and die-through vias, according to several embodiments. [Figure 3D] This figure shows a portion of an exemplary process flow for generating inter-die interconnections using crossover dies and die-through vias, according to several embodiments. [Figure 4] This is a flowchart illustrating an exemplary method for generating inter-die interconnections using crossover dies and die-through vias, according to several embodiments. [Figure 5] This is a flowchart illustrating an exemplary method for generating inter-die interconnections using crossover dies and die-through vias, according to several embodiments. [Figure 6] This is a flowchart illustrating an exemplary method for generating inter-die interconnections using crossover dies and die-through vias, according to several embodiments. [Modes for carrying out the invention]

[0003] The following disclosure provides many different embodiments or examples for implementing different features of the invention provided. For the sake of brevity of this disclosure, specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to be limiting. For example, the formation of the first feature above or on top of the second feature in the following description may include embodiments in which the first and second feature parts are formed in direct contact, and may also include embodiments in which an additional feature part is formed between the first and second feature parts so that the first and second feature parts do not have to be in direct contact. Furthermore, spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper,” “back,” “front,” “top,” and “bottom” are used herein to facilitate descriptions of the relationship of one element or feature to another, as shown in the figures. Similarly, terms such as “front” and “back” or “top” and “back” may be used herein to more easily identify various components, for example, to identify that those components are on the opposite side of another component. Spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation shown in the figures.

[0004] The construction of semiconductor devices such as system-in-package (SiP) or system-on-integrated chip (SOiC) generally involves die manufacturing and packaging processes. The manufacturing process, typically carried out in a cleanroom at a foundry, involves manufacturing system-on-chip (SoC) dies that mount system components or functional circuit blocks onto a wafer. For example, each SoC die may include components such as a processor core, interface, memory, graphical processing unit, and digital signal processor. These components may be separated on the wafer. During the manufacturing process, device layers for mounting the functional circuit blocks and redistribution structures connecting those functional circuit blocks are generated with high precision in the cleanroom. The wafer is then diced to produce individual SoC dies (e.g., "chiplets"). During the packaging process, dissimilar SoC dies are integrated into a package to reconfigure or create a system. SoC dies can be connected using various techniques such as post-manufacturing redistribution layers, interposer wafers, and fan-out structures. The goal is to increase the yield of known good dies and use these connectivity techniques to create integrated solutions that perform as well as, or better than, monolithic SoCs. However, as the number of input / output (I / O) connections between individual dies increases, implementing these connections becomes more difficult.

[0005] As semiconductor technology has advanced further, multilayer semiconductor devices (e.g., three-dimensional integrated circuits (3DICs)) have emerged as an effective alternative for further reducing the physical size of semiconductor devices. In multilayer semiconductor devices, active circuits such as logic, memory, and processor circuits are manufactured on different semiconductor dies. To further reduce the form factor of semiconductor devices, two or more semiconductor dies can be placed on top of each other or stacked.

[0006] One approach to SoC design and component reuse is the "chiplet" concept. A chiplet is a semiconductor die containing one or more functional circuit blocks or intellectual property (IP) blocks specifically designed to work together with other chiplets to form larger and more complex chips. To modularize system designs and reduce complexity, these chiplets often contain reusable IP blocks. Integrating various dissimilar chiplets into a single system can be challenging. High-density, short-channel, and wide interconnects are required for inter-die partitioning. While this can be achieved by using post-manufacturing redistribution layer structures, such connections require more than two to three layers of fine line-and-space pitch, and conventional package or wafer-level fan-out integration solutions cannot achieve this goal. Furthermore, I / O connections exiting the die are limited by bumping and flip-chip techniques. For example, solder reflow for the final flip-chip bonding and connections on the die cannot be further scaled down, while the initial solution on the die is limited by pick-and-place accuracy and via capture tolerances on a temporary carrier.

[0007] Embodiments of this disclosure relate to generating interconnections between dies using crossover dies and through-die vias to provide connectivity density for the integration of highly segmented SoC dies. In some examples, the SoC is segmented into dies or chiplets based on functionality and optimized die size for better manufacturing yield. In these examples, the chip is configured such that several dies are arranged side by side in a 2D manner, and several dies are stacked on top of a bottom die. Ultra-high density I / O connectivity is required between the dies so that the heterogeneously integrated dies can operate as well as, or better than, a monolithic device. The top die is used not only to provide its core functionality but also to function as a bridge between the bottom dies. A foundry die-level redistribution layer (e.g., a back-end of line, BEOL) is utilized to generate the bridging function of the interconnect dies, i.e., the crossover dies, which are mounted on the back surface of the bottom die. Signals, power, and ground are delivered to the interconnect dies using through-die vias within the bottom die. The interconnect dies may be passive (simply metal connections) or they may include active functional circuit blocks of the SoC along with the inter-die connections.

[0008] An exemplary embodiment of the present disclosure relates to a semiconductor package comprising a first die, a second die, and an interconnect die coupled to a first plurality of through-die vias in the first die and a second plurality of through-die vias in the second die. In some examples, the first die includes a first die pad region on a first surface of a first substrate, with the first plurality of through-die vias connecting the first die pad region to a second surface of the first substrate; the second die initially includes a second die pad region on the surface of a second substrate, with the second plurality of through-die vias connecting the second die pad region to a second surface of the second substrate. In some examples, the first plurality of die pads of the interconnect die are bonded to the first plurality of through-die vias, and the second plurality of die pads of the interconnect die are bonded to the second plurality of through-die vias. In some examples, the interconnect die is hybrid-bonded to the first die and the second die. In some examples, the first die, the second die, and the interconnect die constitute a system-on-chip die. In some examples, the interconnect die includes a fabricated redistribution layer structure that implements a communication path between the first die and the second die. In some examples, the third die is coupled to the first die using multiple through-die vias, and the fourth die is coupled to the second die using multiple through-silicon vias.

[0009] Another embodiment of the present disclosure relates to an apparatus comprising components and a semiconductor package operably connected to the components. In this embodiment, the semiconductor package includes a first die, a second die, and an interconnect die coupled to a first plurality of through-die vias in the first die and a second plurality of through-die vias in the second die. In some examples, the first die includes a first die pad region on a first surface of a first substrate, with the first plurality of through-die vias connecting the first die pad region to a second surface of the first substrate; the second die initially includes a second die pad region on the surface of a second substrate, with the second plurality of through-die vias connecting the second die pad region to a second surface of the second substrate. In some examples, the first plurality of die pads of the interconnect die are bonded to the first plurality of through-die vias, and the second plurality of die pads of the interconnect die are bonded to the second plurality of through-die vias. In some examples, the interconnect die is hybrid bonded to the first die and the second die. In some examples, the first die, the second die, and the interconnect die are system-on-chip dies. In some examples, the interconnect die includes a manufactured redistribution layer structure that implements a communication path between the first die and the second die. In some examples, the third die is coupled to the first die using a plurality of through-die vias, and the fourth die is coupled to the second die using a plurality of through-silicon vias.

[0010] Further embodiments of the present disclosure relate to a method for generating an interconnection between dies using crossover dies and through-die vias, comprising stacking interconnect dies face-down on the respective back surfaces of a first die and a second die, and joining the interconnect dies to a first plurality of through-die vias in the first die and a second plurality of through-die vias in the second die. In some examples, the method includes removing portions of the back surfaces of the first die and the second die before stacking the interconnect dies to expose the first plurality of through-die vias and the second plurality of through-die vias. In some examples, stacking interconnect dies face-down on the respective back surfaces of the first die and the second die includes aligning the first plurality of die pads of the interconnect dies to the first plurality of through-die vias and the second plurality of die pads of the interconnect dies to the second plurality of die pads. In some examples, the method includes stacking a third die face-down on the back surface of a first die and bonding the third die to a third set of through-die vias within the first die. In some examples, the first die, the second die, and the interconnect die are a system-on-chip die. In some examples, the interconnect die includes a fabricated redistribution layer structure that implements a communication path between the first die and the second die.

[0011] For further explanation, Figure 1 is a perspective view of an exemplary package structure architecture (100) in several embodiments. Embodiments of the package structure architecture (100) may be useful in high-performance applications such as personal computers, notebooks, tablets, smartphones, and storage data centers, or in applications involving large databases and / or analysis, such as finance, life sciences, and / or artificial intelligence. Many other applications are possible. In addition, the package structure (100) can be assembled as described herein in a manner that is more cost-effective and provides a higher manufacturing yield compared to other manufacturing methods such as system-in-package structures. Furthermore, the package structure (100) and the connections between its components may have increased density, performance, and reliability compared to some other such system-in-package structures.

[0012] The exemplary package structure shown in Figure 1 includes a bottom die, which is an SoC die (110, 120). In the diagram shown in Figure 1, the visible surface (111, 121) is the back surface of the die (110, 120). The interconnect dies (130, 140, 150) are stacked on top of the back surface (111, 121) of the bottom die (110, 120) in an overlapping configuration, as shown. In various examples, the interconnect dies (130, 140, 150) may be SoC dies or passive bridge dies. The interconnect dies (130, 140, 150) include a surface (on the opposite side of the back surface and not visible) of a connection region (e.g., a BEOL layer) bonded to the bottom die (110, 120). The connection region is coupled to through-silicon vias (invisible) within the bottom die (110, 120), thereby providing a communication path between the bottom dies (110, 120). In some examples, an additional SoC die (160, 170) is stacked on top of the bottom die (110, 120). The connection region of the top die (160, 170) is coupled to additional through-silicon vias within the bottom die (110, 120).

[0013] For further explanation, Figure 2 is a cross-sectional view of an exemplary package structure (200) according to several embodiments. The semiconductor package structure (200) includes a plurality of primary-level dies (220, 230, 240) that function as the first level of a 3D integrated circuit architecture. In one example, the primary-level dies (220, 230, 240) are heterogeneous SoC dies that implement SoC component functions. The primary-level dies (220, 230, 240) are directly connected to various package interconnects (258) for connecting the semiconductor package to a substrate (201), wafer, card, or other component. The various interconnects (258) provide power and ground from the substrate to the primary-level dies (220, 230, 240) and transmit input and output signals.

[0014] In the example shown in Figure 2, each primary level die (220, 230, 240) includes its respective substrate (221, 231, 241). In some examples, each substrate (221, 231, 241) consists of a bulk material of choice (e.g., silicon, germanium, or gallium derivative) and a device layer, which is typically manufactured by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductor layers of the material onto a semiconductor bulk, and then using photolithography and photomasks to pattern the various material layers to form circuit components and elements (e.g., transistors, capacitors, resistors, etc.). In these examples, the circuit components may be connected to form integrated circuits that implement functional circuit blocks of the SoC die, such as processors, interfaces, memory, and / or other system components.

[0015] In the example shown in Figure 2, each primary level die (220, 230, 240) includes its respective connection region (222, 232, 242). In some examples, each connection region (222, 232, 242) includes a build-up layer containing metallization and interlevel dielectric material layers, as well as conductive structures such as vias, traces, and pads. In these examples, each connection region (222, 232, 242) forms connections between circuit components configured within each substrate (221, 231, 241) to implement the functional circuit blocks of the SoC die. The connection regions (222, 232, 242) implement die-level redistribution layer structures (e.g., back-end-of-line (BEOL) structures) generated during the die manufacturing process. During the manufacturing process, interconnections may be generated with very fine line / space pitches of less than 1 μm, thus enabling high-density connections. In these examples, the connection areas (222, 232, 242) include bonding sites to which metal connectors (e.g., die pads, microbumps, Controlled Collapse Chip Connection (C4) bumps) may be attached during the manufacturing process or in a “post-manufacturing” process such as die packaging. As used herein, each connection area (222, 232, 242) represents the “active face” or “front face” of the die, as opposed to the “back face” of the die, which is the face of the bulk material.

[0016] In the example shown in Figure 2, each primary level die (220, 230, 240) includes multiple through-silicon vias (TSVs) (223, 233, 243) that provide interconnection from connection regions (222, 232, 242) through their respective substrates (221, 231, 241) to the back surface of the die, and as a result, the TSVs (223, 233, 243) provide signals (as well as power and ground) between the connection regions (222, 232, 242) on one face of the die and the opposing face of the die for interconnection to other components. In some examples, the back surface of each primary level die (220, 230, 240) may include a redistribution layer (not shown) containing a metallization layer or multiple levels of metallization and dielectric layers generated on the back surface of the die to connect the TSVs (223, 233, 243) to other components. In some cases, TSV(223, 233, 243) may be a "via-first" TSV, manufactured before the device layers (transistors, capacitors, resistors, etc.) are patterned. In some cases, TSV(223, 233, 243) may be a "via-middle" TSV, manufactured after the individual devices have been patterned but before the connection regions (222, 232, 242) are formed. In some cases, TSV(223, 233, 243) may be a "via-last" TSV, manufactured after (or during) the formation of the connection regions (222, 232, 242). After formation, TSV(223, 233, 243) may be selectively filled or plated with a conductive material (e.g., copper) to create interconnects. In some cases, TSV(223, 233, 243) are essentially metal insulator semiconductor (MIS) devices in which a dielectric layer of SiO2 is deposited for electrical insulation between a conductive metal and a silicon substrate. In some cases, the diameter of the TSV(223, 233, 243) may be less than 10 μm. In some cases, the TSV(223, 233, 243) is embedded, and as a result, a large portion of the substrate must be removed by grinding or etching to expose the TSV.Readers will understand that TSVs (223, 233, 243) provide high-density, short-channel, and wide interconnects useful for die splitting and die stacking. Readers will also understand that TSVs, commonly referred to as "through-silicon" vias, can be any via (i.e., through-die via) connecting the front and back surfaces of a die, regardless of the substrate material.

[0017] In the example shown in Figure 2, the semiconductor package structure (200) includes secondary level dies (250, 260, 270, 280, 290) that function as the second level of the 3D integrated circuit architecture. In some examples, as shown in Figure 2, the secondary level dies (250, 260, 270, 280, 290) are joined to the primary level dies (220, 230, 240) face-to-back (F2B) through various joining techniques such as hybrid bonding, thermocompression bonding, solder reflow, and other techniques. However, it is further conceivable that the secondary level dies (250, 260, 270, 280, 290) may also be joined to the primary level dies (220, 230, 240) face-to-face (F2F) through various joining techniques such as hybrid bonding, thermocompression bonding, solder reflow, and other techniques.

[0018] In some examples, the secondary level dies (250, 260, 270, 280, 290) include interconnect dies (250, 260). In the example shown in Figure 2, the interconnect die (250) provides multiple connection paths between the connection region (222) of die (220) via TSV (223) and the connection region (232) of die (230) via TSV (233). Similarly, the interconnect die (260) provides multiple connection paths between the connection region (232) of die (230) via TSV (233) and the connection region (242) of die (240) via TSV (243). In some examples, the connection paths provided by the interconnect dies (250, 260) are implemented within the conductive structure (metallization layer) of the connection region (252, 262) of the interconnect die (250, 260). The connection regions (252, 262) may be manufactured as described above with respect to the manufacturing of the connection regions (222, 232, 242), and therefore the connection regions (252, 262) may be die-level BEOL structures.

[0019] In some embodiments, interconnect dies (250, 260) are inactive bridge dies in that they include a metallization layer and a dielectric layer within the interconnection region (252, 262), but do not include an active device layer that implements logic functions. The interconnection region (252, 262) is configured to generate interconnections between TSV interfaces on the back surface of the primary level dies (220, 230, 240). For example, the interconnection region (252, 262) may be etched or modified to generate connection paths.

[0020] In some embodiments, the interconnect dies (250, 260) are active bridge dies in that they include metallization layers and dielectric layers within the connection regions (252, 262), as well as logic for routing connections between the respectively coupled primary level dies (220, 230, 240). The connection regions (252, 262) are configured to create interconnects between the TSV interfaces on the back surfaces of the primary level dies (220, 230, 240). For example, the connection regions (252, 262) can be etched or modified to create connection paths.

[0021] In some embodiments, the interconnect dies (250, 260) are SoC dies like the primary level dies (220, 230, 240) in that they include metallization layers and dielectric layers within the connection regions (252, 262), as well as functional circuit blocks within substrates (251, 261) for implementing SoC components. In other words, in this embodiment, the interconnect dies (250, 260) are essentially SoC dies like the primary level dies (220, 230, 240), but are further configured with a redistribution layer structure and / or logic for creating interconnects between the TSV interfaces on the back surfaces of the primary level dies (220, 230, 240). For example, the connection regions (252, 262) can be etched to create connection paths.

[0022] The reader will understand that by using a manufactured die-level redistribution layer structure, such as a BEOL structure, in the connection region (252, 262) of the interconnect dies (250, 260), a finer line-and-space pitch and more redistribution layers are provided than typically achieved in post-manufactured redistribution layer structures generated to connect two dies, thus enabling a higher connection density. The reader will also understand that the use of TSVs (223, 233, 243) provides shorter channels and wider connections than typically achieved in post-manufactured redistribution layer structures generated to connect two dies. Thus, embodiments of this disclosure lead to the requirements of high-density, short-channel, and wide interconnections for SoC partitioning across multiple dies.

[0023] In the example shown in Figure 2, the secondary level dies (250, 260, 270, 280, 290) include the stacked dies (270, 280, 290). In some examples, the stacked dies (270, 280, 290) are SoC dies similar to the primary level dies (220, 230, 240), in that they include metallization and dielectric layers within the connection region (272, 282, 292), as well as functional logic within the substrate (271, 281, 291) for mounting the SoC components. That is, the stacked dies (270, 280, 290) are manufactured in the same manner as described above for the primary level dies (220, 230, 240). In particular, the connection region (272, 282, 292) includes a die-level manufactured redistribution layer structure such as a BEOL structure. The stacked dies (270, 280, 290) differ from the primary level dies (220, 230, 240) in that they are not directly connected to the package interconnect (258) that transmits input signals, output signals, power, and ground, but rather input signals, output signals, power, and ground to and from the stacked dies (270, 280, 290) are transmitted through the TSVs (223, 233, 243) of the primary level dies (220, 230, 240). In some examples, the die pads of the stacked dies (270, 280, 290) may be bonded directly to the TSVs (223, 233, 243) or to a redistribution layer structure built on the back surface of the primary level die for connection to the TSVs (223, 233, 243). Readers will understand that TSV(223, 233, 243) allows dies to be interconnected through stacking without requiring a wafer or interposer redistribution layer to connect the dies. Readers will also understand that F2B stacking and bonding of dies is scalable in that more than two dies can be stacked. Thus, embodiments of this disclosure lead to a smaller package footprint with increased die density within the package.

[0024] In the example shown in FIG. 2, the semiconductor package structure (200) includes an encapsulation material layer (214) that encapsulates dies (220, 230, 240, 250, 260, 270, 280, 290). In one example, the encapsulation layer (214) is an epoxy or other polymeric material. In another example, the encapsulation layer is SiO x2 and thus has a coefficient of thermal expansion (CTE) close to that of the dies.

[0025] In the example shown in FIG. 2, the semiconductor package structure (200) includes a carrier wafer (212) (e.g., composed of silicon) that provides mechanical support to the semiconductor package structure and provides a surface for attaching a heat dissipation device such as a heat sink. It will be appreciated that in some embodiments where the encapsulation material layer (214) provides sufficient mechanical support to the semiconductor package structure (200), the carrier wafer (212) may be omitted.

[0026] For further explanation, Figures 3A to 3D show exemplary process flows for constructing a semiconductor package structure (300) according to various embodiments. For example, the exemplary process flows shown in Figures 3A to 3D may be used to construct the exemplary semiconductor package structure (200) shown in Figure 2. Starting from Figure 3A, in step 310, the primary level dies (320, 330, 420, 430) are mounted on the carrier (496) such that the connection regions (322, 332, 422, 432) are face-down on the carrier (496) and the back surface of the die substrate (321, 331, 421, 431) is face-up. Before mounting the dies (320, 330, 420, 430), the mounting surface of the carrier (496) may be treated with a thermal or photoactivated exfoliation layer for final separation of the carrier (496). The carrier (496) may be a glass carrier or other suitable material. In some examples, the gaps between the primary level dies (320, 330, 420, 430) are filled with a encapsulation layer as described above. In one exemplary process, the primary level dies (320, 330, 420, 430) undergo a thinning process to remove bulk material from the back of the die (e.g., by grinding) to expose the embedded TSV (323, 333, 423, 433). Alternatively, thinning is either not required or is performed before the primary level dies (320, 330, 420, 430) are placed on the carrier (496). In some examples, the TSVs (323, 333, 423, 433) are plated or filled with a conductive material (e.g., copper), and the back surface of the primary level die (320, 330, 420, 430) is prepared to receive the secondary level die (350, 370, 380, 450, 470, 480). For example, the back surface of the primary level die (320, 330, 420, 430) may be treated with a metallization layer or redistribution layer structure (metallization and dielectric layer) to facilitate the connection of the TSVs (323, 333, 423, 433) to the die pad within the connection region (352, 372, 382, ​​452, 472, 482) of the secondary level die (350, 370, 380, 450, 470, 480).

[0027] Moving to Figure 3B, in step 320, the secondary level dies (350, 370, 380, 450, 470, 480) are F2B bonded to the primary level dies (320, 330, 420, 430). The secondary level dies (350, 370, 380, 450, 470, 480) can be bonded to the primary level dies (320, 330, 420, 430) using various die bonding techniques. In some examples, die pads within the connection regions (352, 372, 382, ​​452, 472, 482) of secondary level dies (350, 370, 380, 450, 470, 480) are bonded to exposed TSVs (323, 333, 423, 433) on the back surface of the primary level dies (320, 330, 420, 430) using hybrid bonding technology. For example, an interconnect die (350) includes die pads or microbumps (e.g., for input / output signals, power, and ground of the die) bonded to or otherwise connected to the TSV (323) of the SoC primary level die (320), and die pads bonded to the TSV (333) of the SoC primary level die (330). Furthermore, the interconnect die (450) includes a die pad or microbump bonded to the TSV (423) of the SoC primary level die (420) and a die pad bonded to the TSV (433) of the SoC primary level die (430). In some examples, stacked dies (370, 380, 470, 480), if present, are bonded to or otherwise connected to the respective TSVs (323, 333, 423, 433) of their respective host dies (320, 330, 420, 430). For example, the stacked dies (370, 380, 470, 480) may be SoC dies implementing SoC functions or interfaces or memory devices. Continuing with step 320, additional encapsulation material (314) is added to fill the gaps between the secondary level dies (350, 370, 380, 450, 470, 480) and encapsulate the die substrates (351, 371, 381, 451, 471, 481), and a carrier (495) is added on top of the encapsulation material layer (314) for mechanical support and heat dissipation.

[0028] As described above, the interconnect dies (350, 450) include a manufactured die-level redistribution layer structure that implements high-density interconnects between the primary die (320) and the primary die (330), and between the primary level die (420) and the primary level die (430), respectively. Thus, the TSVs (323, 333, 423, 433) and interconnect dies (350, 450) form high-density short-range connection paths for die-to-die communication. In some examples, as described above, the interconnect dies may be additional SoC dies implementing SoC functionality, or the interconnect dies may be passive dies simply for the purpose of forming connection paths. The reader will understand that the interconnect die and stacked die architecture with the TSVs described above increases the number of SoC dies included in the semiconductor package without increasing the package footprint to accommodate fan-out redistribution structures, interposers, or wafers for die-to-die connectivity.

[0029] Moving to Figure 3C, in step 330, the bottom carrier (496) is removed and the front surfaces of the primary level dies (320, 330, 420, 430) are prepared for interconnection mounting. In some examples, the bottom carrier (496) is removed by activating the delamination layer between the front surfaces of the primary level dies (320, 330, 420, 430) and the carrier (496). For example, the delamination layer may be activated by heat or light. In some examples, the front surfaces of the primary level dies (320, 330, 420, 430) are prepared for interconnection mounting by performing an underbump metallization process to expose the bonding sites within the connection regions (322, 332, 422, 432).

[0030] Moving to Figure 3D, in step 340, the interconnects (358, 458) are attached to the junction sites of the connection regions (322, 332, 422, 432), and the semiconductor package structure (300) is diced to produce semiconductor packages (301) and (302).

[0031] For further explanation, Figure 4 is a flowchart illustrating an exemplary method for generating an interconnection between dies using crossover dies and die-through vias, which includes stacking interconnect dies face-down on the respective back surfaces of the first and second dies (510). In some examples, stacking interconnect dies face-down on the respective back surfaces of the first and second dies (510) is performed by orienting the first and second dies face-down on a carrier or other suitable support structure and arranging the interconnect dies face-down on the first and second dies such that the interconnect dies partially overlap the back surface of the first die and partially overlap the back surface of the second die. As used herein, the “face” of a die is the surface of the die adjacent to the connection area, including the die-level redistribution layer structure and the device layer. As used herein, the “back surface” of a die is the opposite side of the die, the surface of the die adjacent to the inert bulk material of the die. An example in which interconnect dies are stacked face-down on the back surfaces of the first die and the second die (510) is shown in Figures 3A and 3B. The first die and the second die may be primary level dies such as any of the primary level dies (220, 230, 240, 320, 340, 420, 440) described above, which contain the functional circuit blocks of the SoC. The interconnect die may be an interconnect die such as any of the interconnect dies (250, 260, 350, 450) described above. As described above, the interconnect die may be an SoC die that implements the functional circuit blocks of the SoC, or it may be an active or passive bridge die used solely to implement the connection path between the first die and the second die.

[0032] An exemplary method in Figure 4 includes joining an interconnect die to a first plurality of through-die vias (e.g., TSVs) in a first die and a second plurality of through-die vias (e.g., TSVs) in a second die (520). In some examples, joining an interconnect die to a first plurality of through-die vias in a first die and a second plurality of through-die vias in a second die (520) is performed through a die joining process in which the first plurality of die pads of the interconnect die are joined to the first plurality of through-die vias and the second plurality of die pads of the interconnect die are joined to the second plurality of die pads. In some examples, the die pads are metal interconnect structures (e.g., copper) with a pitch of less than 10 μm, and the first plurality of through-die vias and the second plurality of through-die vias have a diameter of less than 10 μm. In these examples, the die pads of the interconnect die may be joined to the first and second plurality of through-die vias using hybrid joining techniques, for example, including metal joining and oxide joining. The use of fine-pitch interconnects in interconnect dies, available through hybrid bonding, enables improved signal quality, power efficiency, and overall performance between a first die and a second die through connection paths implemented by the interconnect die. In other examples, bonding an interconnect die to a first plurality of through-die vias in the first die and a second plurality of through-die vias in the second die (520) is performed by thermocompression bonding, solder reflow, or other well-known die bonding techniques. As described above, through-die vias such as any of the above TSVs provide a connection between the active side of the die and the back side of the die. In relation to interconnect dies, through-die vias provide a communication path for communicatively coupling the first die and the second die.

[0033] For further explanation, Figure 5 is a flowchart illustrating an exemplary method for generating an interconnection between dies using crossover dies and through-die vias. Similar to the exemplary method in Figure 4, the method in Figure 5 includes stacking interconnect dies face-down on the back surfaces of the first and second dies (510), and joining the interconnect dies to a first set of through-die vias in the first die and a second set of through-die vias in the second die (520). The method in Figure 5 differs from the method in Figure 4 in that it also includes removing portions of the back surfaces of the first and second dies before stacking the interconnect dies to expose the first set of through-die vias and a second set of through-die vias (610). In some examples, removing portions of the back surfaces of the first and second dies to expose the first and second multiple die through vias (610) is performed by grinding or otherwise removing portions of the bulk material on the back surfaces of the first and second dies to expose the embedded die through vias that were formed within the dies during die manufacturing.

[0034] For further explanation, Figure 6 is a flowchart illustrating an exemplary method for generating an interconnection between dies using crossover dies and through-die vias. Similar to the exemplary method in Figure 4, the method in Figure 6 includes stacking interconnect dies face-down on the back surfaces of the first and second dies respectively (510), and joining the interconnect dies to a first set of through-die vias in the first die and a second set of through-die vias in the second die (520). The method in Figure 6 differs from the method in Figure 4 in that it also includes stacking a third die face-down on the back surface of the first die (710). In some examples, stacking the third die face-down on the back surface of the first die (710) is performed by aligning die pads within the connection area of ​​the third die to a set of through-die vias exposed on the back surface of the first die. For example, the third die contains a functional circuit block of the SoC.

[0035] Furthermore, the method in Figure 6 differs from the method in Figure 4 in that it also includes joining (720) a third die to a third set of through-die vias within the first die. In some examples, joining (720) a third die to a third set of through-die vias within the first die is performed by a die joining technique in which metal interconnects (e.g., die pads) on the connection area of ​​the third die are joined to through-die vias (e.g., TSVs) of the first die, thus implementing a communication path between the connection area of ​​the first die and the connection area of ​​the third die, thereby resulting in a rewiring structure that enables communication between the first die and the third die. Various die joining techniques described above can be utilized.

[0036] Considering the above explanation, the reader will understand that integration of heterogeneous dies constituting a system-on-a-chip in a package is provided by generating inter-die interconnections using crossover dies and through-die vias. The reader will also understand that a redistribution mechanism joining two dies using through-die vias and interconnect dies provides high-density, short-channel, wide interconnections between a first die and a second die. The reader will also understand that the use of a manufactured die-level redistribution structure for interconnect dies provides higher density interconnections with finer pitches than those provided by a post-manufacturing fan-out redistribution structure. The reader will also understand that a redistribution mechanism joining two dies using through-die vias and interconnect dies may be scaled down and is not limited by bump size or pick-and-place accuracy.

[0037] The embodiments discussed herein are described in a specific context, namely, a package having a 3D structure, oriented face-to-back, on a first level die, and including stacked dies interconnected by bridge die interconnects and die-through vias. Other embodiments are intended for other applications, such as different package types or different configurations, which will be readily apparent to those skilled in the art upon reading this disclosure. It should be noted that the embodiments described herein may not necessarily illustrate all components or features that may be present in the structure. For example, several components may be omitted from the drawings if the description of any of them is sufficient to convey the aspect of the embodiment. Furthermore, while embodiments of the methods described herein may be described as being carried out in a specific order, embodiments of other methods may be carried out in any logical order.

[0038] It will be understood from the above description that modifications and changes can be made to various embodiments of this disclosure. The statements herein are for illustrative purposes only and should not be construed as restrictive. The scope of this disclosure is limited only by the following claims.

Claims

1. A semiconductor package, The first die, The second die, The device comprises an interconnecting die coupled to a first plurality of die-through vias in the first die and a second plurality of die-through vias in the second die, The aforementioned interconnection die is The first die surface is bonded via a hybrid bond, the surface of the first die is opposite to the other surface of the first die, the other surface of the first die is bonded to the substrate, and the hybrid bond bonds the first plurality of die pads of the interconnect die to the ends of the first plurality of die through vias. The other hybrid bond connects to the surface of the second die, the surface of the second die being opposite to the other surface of the second die, the other surface of the second die being connected to the substrate, and the other hybrid bond connects the second plurality of die pads of the interconnect die to the ends of the second plurality of die through vias. Semiconductor package.

2. The first die includes a first die pad region on a first surface of a first substrate, and the first plurality of die through vias connect the first die pad region to a second surface of the first substrate. The second die includes a second die pad region on the first surface of the second substrate, and the second plurality of die through vias connect the second die pad region to the second surface of the second substrate. The semiconductor package according to claim 1.

3. The first plurality of die pads of the interconnecting die are connected to the first plurality of die through vias, and the second plurality of die pads of the interconnecting die are connected to the second plurality of die through vias. The semiconductor package according to claim 2.

4. The first die, the second die, and the interconnecting die are system-on-chip dies. The semiconductor package according to claim 1.

5. The connection region of the interconnecting die includes a manufactured redistribution layer structure that implements a communication path between the first die and the second die. The semiconductor package according to claim 1.

6. The third die is coupled to the first die using a third number of die-through vias within the first die. A fourth die is bonded to the second die using a fourth plurality of silicon through vias within the second die. The semiconductor package according to claim 1.

7. It is a device, Components and, The semiconductor package comprises the aforementioned components and is operably connected to the aforementioned components, The aforementioned semiconductor package is The first die, The second die, The device comprises an interconnecting die coupled to a first plurality of die-through vias in the first die and a second plurality of die-through vias in the second die, The aforementioned interconnection die is The first die surface is bonded via a hybrid bond, the surface of the first die is opposite to the other surface of the first die, the other surface of the first die is bonded to the substrate, and the hybrid bond bonds the first plurality of die pads of the interconnect die to the ends of the first plurality of die through vias. The other hybrid bond connects to the surface of the second die, the surface of the second die being opposite to the other surface of the second die, the other surface of the second die being connected to the substrate, and the other hybrid bond connects the second plurality of die pads of the interconnect die to the ends of the second plurality of die through vias. Device.

8. The first die includes a first die pad region on a first surface of a first substrate, and the first plurality of die through vias connect the first die pad region to a second surface of the first substrate. The second die includes a second die pad region on the first surface of the second substrate, and the second plurality of die through vias connect the second die pad region to the second surface of the second substrate. The apparatus according to claim 7.

9. The first plurality of die pads of the interconnecting die are connected to the first plurality of die through vias, and the second plurality of die pads of the interconnecting die are connected to the second plurality of die through vias. The apparatus according to claim 8.

10. Each of the first die, the second die, and the interconnecting die is a system-on-chip die. The apparatus according to claim 7.

11. The connection region of the interconnecting die includes a manufactured redistribution layer structure that implements a communication path between the first die and the second die. The apparatus according to claim 7.

12. The third die is coupled to the first die using a third number of die-through vias within the first die. A fourth die is bonded to the second die using a fourth plurality of silicon through vias within the second die. The apparatus according to claim 7.

13. The manufactured redistribution layer structure includes a back-end obline (BEOL) layer, The semiconductor package according to claim 5.

14. The manufactured redistribution layer structure includes a back-end obline (BEOL) layer, The apparatus according to claim 11.

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