Method for manufacturing a light-emitting device

Abstract

To provide a light-emitting device and a manufacturing method of the light-emitting device which can improve a yield.SOLUTION: A manufacturing method of a light-emitting device comprises steps of: preparing a substrate on which a semiconductor part is arranged; preparing a conductive support substrate which has a first surface and a second surface on the side opposite to the first surface and in which a groove part is formed on the first surface; arranging the semiconductor part on the first surface such that the semiconductor part crosses the groove part in the plan view and electrically connecting the semiconductor part and the support substrate; removing the substrate from the semiconductor part; joining a wavelength conversion member to the semiconductor part from which the substrate is removed; filling a light-reflective resin member in the groove part and a space between the support substrate and the wavelength conversion member; and removing a portion of the support substrate from the second surface side to expose the resin member filled in the groove part from the support substrate.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] Embodiments of the present invention relate to a method for manufacturing a light-emitting device. In the law

Background Art

[0002] Patent Document 1 discloses an LED device provided with an electrode connected to a bump electrode of an LED element on a bottom surface of a sealing member that covers a side surface and a portion of a bottom surface where no bump electrode is disposed of the LED element, and a method for manufacturing the same. Further, a phosphor layer that covers an upper surface of the LED element and an upper surface of the sealing member is provided in the LED device.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide a method for manufacturing a light-emitting device that can improve the yield, and a light-emitting device.

Means for Solving the Problems

[0005] ​A method for manufacturing a light-emitting device according to one embodiment of the present invention comprises the steps of: preparing a substrate on which a semiconductor portion is arranged; preparing a conductive support substrate having a first surface and a second surface opposite to the first surface, wherein a groove is formed on the first surface; arranging the semiconductor portion on the first surface such that, in a plan view, the semiconductor portion straddles the groove, and electrically connecting the semiconductor portion and the support substrate; removing the substrate from the semiconductor portion; bonding a wavelength conversion member to the semiconductor portion from which the substrate has been removed; filling the groove and the space between the support substrate and the wavelength conversion member with a light-reflective resin member; and removing a part of the support substrate from the second surface side to expose the resin member filled in the groove from the support substrate.

[0006] A light-emitting device according to one embodiment of the present invention comprises a semiconductor portion having a first surface and a second surface opposite to the first surface; a first electrode portion disposed on the first surface; a second electrode portion disposed on the first surface at a distance from the first electrode portion; a conductive first support substrate connected such that a portion overlaps the first electrode portion in a plan view; a conductive second support substrate connected such that a portion overlaps the second electrode portion in a plan view; a wavelength conversion member disposed on the second surface; and a light-reflective resin member disposed between the wavelength conversion member and the first electrode portion, between the wavelength conversion member and the second electrode portion, and between the first support substrate and the second support substrate. [Effects of the Invention]

[0007] According to one embodiment of the present invention, a method for manufacturing a light-emitting device that can improve yield, and a light-emitting device can be provided. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic cross-sectional view showing an example of a light-emitting device according to the embodiment. [Figure 2] This is a schematic top view showing an example of a light-emitting device according to the embodiment. [Figure 3] This is a schematic bottom view showing an example of a light-emitting device according to the embodiment. [Figure 4] This is a flowchart showing an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 5] This is a schematic cross-sectional view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 6] This is a schematic plan view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 7] This is a schematic cross-sectional view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 8] This is a schematic plan view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 9] This is a schematic cross-sectional view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 10] This is a schematic cross-sectional view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 11] This is a schematic plan view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 12] This is a schematic cross-sectional view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 13] This is a schematic plan view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 14] This is a schematic cross-sectional view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 15] This is a schematic cross-sectional view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 16] This is a schematic cross-sectional view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 17] This is a schematic cross-sectional view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Figure 18] This is a schematic plan view illustrating an example of a method for manufacturing a light-emitting device according to an embodiment. [Modes for carrying out the invention]

[0009] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationships between the thickness and width of each part, the ratios of the sizes between parts, etc. are not necessarily the same as those in reality. Even when representing the same part, the dimensions and ratios may be represented differently in the drawings. In the present specification and each figure, the same reference numerals are assigned to the same elements as those described above with respect to the previously shown figures, and the detailed description will be omitted as appropriate.

[0010] FIG. 1 is a schematic cross-sectional view showing an example of the light-emitting device 100, FIG. 2 is a schematic top view showing an example of the light-emitting device 100, and FIG. 3 is a schematic bottom view showing an example of the light-emitting device 100. Hereinafter, when explaining the direction, the left-right direction of the light-emitting device 100 in FIG. 1 may be referred to as the X-axis direction, the up-down direction as the Z-axis direction, and the direction orthogonal to the X-axis direction and the Z-axis direction as the Y-axis direction.

[0011] As shown in FIG. 1, the semiconductor part 10 has a first surface 10Fa and a second surface 10Fb on the opposite side of the first surface 10Fa. In the present embodiment, the first surface 10Fa is the bottom surface, and the second surface 10Fb is the top surface. The first surface 10Fa and the second surface 10Fb are each substantially parallel to the X-Y plane.

[0012] On the first surface 10Fa of the semiconductor part 10, a first electrode part 11a and a second electrode part 11b are arranged. The first electrode part 11a and the second electrode part 11b are arranged at intervals in the X-axis direction. The first electrode part 11a and the second electrode part 11b are formed of a conductive material. For example, the conductive material is gold (Au), copper (Cu), etc.

[0013] A wavelength conversion member 12 is positioned on the second surface 10Fb of the semiconductor part 10. The wavelength conversion member 12 is, for example, a translucent resin member containing a phosphor. The wavelength conversion member 12 absorbs a portion of the light from the semiconductor part 10 and emits light at a peak wavelength different from the peak wavelength of the light from the semiconductor part 10. The wavelength conversion member 12 and the second surface 10Fb of the semiconductor part 10 are joined together by, for example, a bonding member 13. The bonding member 13 can be, for example, epoxy resin, silicone resin, etc. The shape of the wavelength conversion member 12 is rectangular in plan view, as shown in Figure 2. When the wavelength conversion member 12 is rectangular, the length of one side can be, for example, 50 μm or more and 1500 μm or less. The external dimensions of each element of the light-emitting device 100 positioned below the wavelength conversion member 12 are less than or equal to the external dimensions of the wavelength conversion member 12 in plan view. For example, the resin member 16, the first support substrate 20a, and the second support substrate 20b, which are elements of the light-emitting device 100, are positioned inward from the outer shape of the wavelength conversion member 12 in a plan view. In a cross-sectional view, the side surfaces of the wavelength conversion member 12, the resin member 16, and the first support substrate 20a are located substantially on the same plane. Similarly, in a cross-sectional view, the side surfaces of the wavelength conversion member 12, the resin member 16, and the second support substrate 20b are located substantially on the same plane.

[0014] A conductive part 14a is positioned on the lower surface of the first electrode part 11a. A conductive part 14b is positioned on the lower surface of the second electrode part 11b. The conductive parts 14a and 14b are components for electrically connecting the Zener diode 15 (described later) with the first electrode part 11a and the second electrode part 11b. The materials of the first electrode part 11a, the second electrode part 11b, and the conductive parts 14a and 14b can be any conductive metal. Examples of conductive materials include gold (Au) and copper (Cu).

[0015] In a plan view, the first support substrate 20a is connected such that it partially overlaps with the first electrode portion 11a. Similarly, in a plan view, the second support substrate 20b is connected such that it partially overlaps with the second electrode portion 11b. The materials used for the first support substrate 20a and the second support substrate 20b are conductive materials. In this embodiment, for example, silicon (Si) is used. The materials used for the first support substrate 20a and the second support substrate 20b may be metals. In this embodiment, the top surface, bottom surface, and side surface of the first support substrate 20a facing the second support substrate 20b are each covered with a conductive material. The top surface, bottom surface, and side surface of the second support substrate 20b facing the first support substrate 20a are each covered with a conductive material.

[0016] The first support substrate 20a has a first conductive part 21a and a second conductive part 22a. The first conductive part 21a is located on the upper surface of the first support substrate 20a and on the side facing the second support substrate 20b. The second conductive part 22a is located on the lower surface of the first support substrate 20a. The second support substrate 20b has a first conductive part 21b and a second conductive part 22b. The first conductive part 21b is located on the upper surface of the second support substrate 20b and on the side facing the first support substrate 20a. Second conductive part 22b is positioned on the lower surface of the second support substrate 20b. Second conductive part 22a, The ends of 22b are electrically connected to the ends of the first conductive parts 21a and 21b, respectively. As shown in Figure 3, Second conductive part 22a, A resin member 16, which will be described later, is placed between 22b.

[0017] A portion of the first conductive portion 21a is positioned to overlap with the first electrode portion 11a in a plan view. A portion of the first conductive portion 21a is positioned between the Zener diode 15 (described later) and the first support substrate 20a in the X-axis direction. First conductive part A portion of 21b is positioned to overlap with the second electrode portion 11b in a plan view. A portion of the first conductive portion 21b is positioned between the Zener diode 15 (described later) and the second support substrate 20b in the X-axis direction. In the X-axis direction, the width W1 between the first conductive portion 21a and the first conductive portion 21b is, for example, 100 μm or more and 600 μm or less.

[0018] The light-emitting device 100 further includes a Zener diode 15 electrically connected to the first electrode portion 11a and the second electrode portion 11b on the side opposite to the semiconductor portion 10. By arranging the Zener diode 15, the light-emitting device 100 can supply a stable voltage to the semiconductor portion 10. The Zener diode 15 is arranged in a resin member 16 between the first support substrate 20a and the second support substrate 20b in the X-axis direction. The first electrode portion 11a and the Zener diode 15 are electrically connected, for example, by a conductive portion 14a. The second electrode portion 11b and the Zener diode 15 are electrically connected by a conductive portion 14b.

[0019] The width W2 of the Zener diode 15 in the X-axis direction is smaller than the width W1 between the first conductive portion 21a and the first conductive portion 21b. The width W2 is, for example, between 50 μm and 550 μm. In the Z-axis direction, the position of the lower surface of the Zener diode 15 is located closer to the semiconductor portion 10 than the position of the lower surfaces of the first support substrate 20a and the second support substrate 20b.

[0020] The resin member 16 is positioned between the wavelength conversion member 12 and the first support substrate 20a, between the wavelength conversion member 12 and the second support substrate 20b, and between the first support substrate 20a and the second support substrate 20b. The resin member 16 is further positioned around the Zener diode 15 and between the semiconductor part 10 and the Zener diode 15. The resin member 16 is, for example, a light-reflective resin. For example, epoxy resin, silicone resin, etc., can be used as the resin. The resin member 16 may contain a light-scattering material such as titanium oxide, silicon oxide, zirconium oxide, aluminum oxide, etc. Light from the semiconductor part 10 toward the resin member 16 and light from the wavelength conversion member 12 toward the resin member 16 are reflected by the resin member 16 to the upper surface side of the wavelength conversion member 12.

[0021] The thickness d1 of the wavelength conversion member 12 in the Z-axis direction is greater than the thickness d2 of the resin member 16 positioned between the wavelength conversion member 12 and the first support substrate 20a in the Z-axis direction. That is, thickness d1 > thickness d2. Similarly, the thickness of the resin member 16 positioned between the wavelength conversion member 12 and the second support substrate 20b in the Z-axis direction is also thickness d2. For example, thickness d1 is between 50 μm and 300 μm. For example, thickness d2 is between 5 μm and 15 μm. Also, the thickness d3 of the first conductive parts 21a and 21b in the Z-axis direction is less than thickness d2. The thickness d4 of the second conductive parts 22a and 22b in the Z-axis direction is less than thickness d2. That is, thickness d3, d4 < thickness d2. The thickness d3 of the first conductive parts 21a and 21b and the thickness d4 of the second conductive parts 22a and 22b may be approximately the same. The thickness d3 is, for example, 0.5 μm or more and 5 μm or less. The thickness d4 is, for example, 0.5 μm or more and 5 μm or less. The thickness d5 of the first support substrate 20a and the second support substrate 20b in the Z-axis direction is thicker than the thicknesses d3 and d4. That is, thickness d5 > thickness d3 and thickness d4. The thickness d5 of the first support substrate 20a and the second support substrate 20b in the Z-axis direction is thicker than the thickness d2 of the resin member 16 disposed between the wavelength conversion member 12 and the first support substrate 20a. The thickness d5 is, for example, 200 μm or more and 400 μm or less. The thickness d6, which is the sum of the first conductive part 21a, the first support substrate 20a, and the second conductive part 22a in the Z-axis direction, is, for example, 200 μm or more and 400 μm or less. In the Z-axis direction, the thickness including the second conductive portion 21b, the second support substrate 20b, and the second conductive portion 22b is also the same as the thickness d6.

[0022] Figure 4 is a flowchart showing an example of a manufacturing method for the light-emitting device 100. Figures 5, 7, 9, 10, 12, 14, 15, 16, and 17 are schematic cross-sectional views showing an example of a manufacturing method for the light-emitting device 100. Figures 6, 8, 11, 13, and 18 are schematic plan views showing an example of a manufacturing method for the light-emitting device corresponding to Figures 5, 7, 10, 12, and 17, respectively. The axial directions of the XYZ axes in Figures 5 to 18 correspond to the axial directions of the XYZ axes of the light-emitting device 100, respectively.

[0023] As shown in Figures 4, 5, and 6, a substrate 30 is prepared (ST210). The substrate 30 has a first surface 30Fa which is the bottom surface in the Z-axis direction, and a second surface 30Fb which is the top surface. Multiple semiconductor parts 10 are arranged on the first surface 30Fa of the substrate 30. On the first surface 30Fa of the substrate 30, the multiple semiconductor parts 10 are arranged separately. The substrate 30 is, for example, a growth substrate used to grow the semiconductor parts 10. The substrate 30 is, for example, a sapphire substrate. In plan view, the substrate 30 is circular. On the first surface 30Fa of the substrate 30, multiple semiconductor parts 10 are arranged in a matrix in plan view, for example, as shown in Figure 6. A first electrode part 11a and a second electrode part 11b are arranged on the surface opposite to the surface facing the substrate 30 of each semiconductor part 10. The first electrode portion 11a and the second electrode portion 11b are arranged spaced apart in the X-axis direction. A Zener diode 15 is placed in each semiconductor portion 10. The first electrode portion 11a is electrically connected to the Zener diode 15 via the conductive portion 14a, and the second electrode portion 11b is electrically connected to the Zener diode 15 via the conductive portion 14b. The Zener diode 15 is placed in the semiconductor portion 10, for example, by flip-chip mounting.

[0024] As shown in Figures 4, 7, and 8, a support substrate 20 is prepared (ST220). The support substrate 20 is a conductive substrate having a first surface 20Fb and a second surface 20Fa opposite to the first surface 20Fb, with a plurality of grooves M formed on the first surface 20Fb. In plan view, the support substrate 20 is circular in shape. The support substrate 20 is made of, for example, silicon. The support substrate 20 has, for example, a plurality of grooves M formed on it. The grooves M can be formed, for example, by blade cutting or etching. The plurality of grooves M are formed at regular intervals along a first direction, in this embodiment, along the Y-axis direction. The grooves M and the space between the support substrate 20 and the wavelength conversion member 12 are connected. In Figure 8, the grooves M do not reach the outer edge of the support substrate 20, but the grooves M may be formed to reach the outer edge of the support substrate 20. The depth d7 of the groove M in the Z-axis direction is, for example, about half the thickness d5 of the support substrate 20 in the Z-axis direction. The depth d7 is, for example, 200 μm or more and 500 μm or less. In the X-axis direction, the width W1 of the groove M is greater than the width W2 of the Zener diode 15. When the substrate 30 and the support substrate 20 are joined, the multiple grooves M are arranged at intervals such that each groove M can accommodate the Zener diode 15 provided in each semiconductor part 10. A first conductive member 21 is formed on the first surface 20Fb of the support substrate 20 and on the inner surface of the groove M. The first conductive member 21 can be formed, for example, by sputtering, vapor deposition, etc. The material of the first conductive member 21 is, for example, gold. Before forming the first conductive member 21, the oxide film formed on the first surface 20Fb may be removed with buffered hydrofluoric acid (BHF), etc.

[0025] As shown in Figures 4 and 9, the multiple semiconductor parts 10 and the support substrate 20 are electrically connected (ST230). Specifically, in a plan view, the semiconductor parts 10 are placed on the first surface 20Fb of the support substrate 20 such that the semiconductor parts 10 straddle the grooves M, and the multiple semiconductor parts 10 placed on the substrate 30 and the support substrate 20 are electrically connected. More specifically, the multiple semiconductor parts 10 and the support substrate 20 are electrically connected by joining the first conductive member 21 formed on the first surface 20Fb of the support substrate 20 to the first electrode portion 11a and the second electrode portion 11b of each semiconductor part 10. The multiple semiconductor parts 10 and the support substrate 20 are connected such that the Zener diodes 15 placed in each of the multiple semiconductor parts 10 arranged in the Y-axis direction are placed within a single groove M.

[0026] As shown in Figures 4, 10, and 11, the substrate 30 is removed (ST240). The substrate 30 is removed from the multiple semiconductor parts 10, and the upper surfaces of the multiple semiconductor parts 10 are exposed.

[0027] As shown in Figures 4, 12, and 13, the wavelength conversion member 12 is bonded (ST250). The wavelength conversion member 12 is bonded to the multiple semiconductor parts 10 from which the substrate 30 has been removed. In plan view, the wavelength conversion member 12 is circular in shape. The outer shape of the wavelength conversion member 12 is smaller than the outer shape of the support substrate 20, but its outer shape covers at least all of the upper surfaces of the multiple semiconductor parts 10. The wavelength conversion member 12 is bonded to the upper surfaces of the multiple semiconductor parts 10 by, for example, a bonding member 13.

[0028] As shown in Figures 4 and 14, the resin member 16 is filled (ST260). The resin member 16 is filled into the groove M, and between the support substrate 20 and the wavelength conversion member 12. In a plan view, the resin member 16 is filled, for example, between the support substrate 20 and the wavelength conversion member 12, and from the groove M. As a result, the resin member 16 is filled into multiple grooves M, and also passes through the multiple grooves M to fill the space between the support substrate 20 and the wavelength conversion member 12. A resin member 16 with a thickness d2 that is thinner than the thickness d1 of the wavelength conversion member 12 is formed between the support substrate 20 and the wavelength conversion member 12.

[0029] As shown in Figures 4 and 15, the resin member 16 is exposed from the support substrate 20 (ST270). More specifically, a portion of the support substrate 20 is removed from the second surface 20Fa side, and the resin member 16 filled in the groove M is exposed from the support substrate 20. For example, the support substrate 20 is ground from the second surface 20Fa side until the resin member 16 filled in the groove M is exposed. The opposite side of the first surface 20Fb of the support substrate 20, which is formed by removing a portion of the support substrate 20 in this way, is made the third surface 20Fc.

[0030] As shown in Figures 4 and 16, the second conductive member 22 is formed (ST280). The second conductive member 22 is formed on the third surface 20Fc of the support substrate 20 so as to be electrically connected to at least the end of the first conductive member 21. For example, the second conductive member 22 is formed on the third surface 20Fc of the support substrate 20 and not on the resin member 16. Before forming the second conductive member 22, the oxide film formed on the third surface 20Fc may be removed using buffered hydrofluoric acid (BHF) or the like.

[0031] As shown in Figures 4, 17, and 18, the device is divided into multiple light-emitting devices 100 (ST290). More specifically, in a plan view, the wavelength conversion member 12, resin member 16, support substrate 20, first conductive member 21, and second conductive member 22 located between the semiconductor parts 10 are removed, dividing the device into multiple light-emitting devices 100. For example, the width W3 between the semiconductor parts 10 is diced in the X-axis direction and the Y-axis direction as shown by the solid lines in Figure 18, thereby removing the wavelength conversion member 12, resin member 16, support substrate 20, first conductive member 21, and second conductive member 22 corresponding to the width W3, dividing the device into multiple light-emitting devices 100. As a result, the first support substrate 20a and the second support substrate 20b are formed from the support substrate 20, the first conductive parts 21a and 21b are formed from the first conductive member 21, and the second conductive parts 22a and 22b are formed from the second conductive member 22. Furthermore, the external dimensions of each element, such as the resin member 16 and the support substrate 20, in a plan view are divided so that they are less than or equal to the external dimensions of the wavelength conversion member 12. In this way, the light-emitting device 100 shown in Figure 1 is manufactured.

[0032] As described above, according to the manufacturing method of the light-emitting device 100, the resin member 16 can be filled while the wavelength conversion member 12 is bonded to the plurality of semiconductor parts 10, and the resin member 16 can be placed between the support substrate 20 and the wavelength conversion member 12. Therefore, compared to the case in which the plurality of semiconductor parts 10 are divided by dicing to form the resin member 16 and then the wavelength conversion member 12 is bonded to each of the semiconductor parts 10, the number of manufacturing steps can be reduced. Consequently, the deterioration of yield due to an increase in manufacturing steps can be reduced, and the yield of the light-emitting device 100 can be improved.

[0033] Furthermore, as shown in Figure 16, the wavelength conversion member 12, resin member 16, first conductive member 21, support substrate 20, and second conductive member 22 are stacked in the Z-axis direction, and a portion with a width W3 is removed by dicing. In this case, the thickness of the wavelength conversion member 12 is d1, and the thickness of the first conductive part 21a, support substrate 20, and second conductive member 22 is d6. On the other hand, the thickness of the resin member 16 is d2. Thickness d2 is thinner than thicknesses d1 and d6. For example, thickness d2 is 5% to 10% of thickness d1 or thickness d6. Therefore, even if the resin member 16 has elasticity, the effect of elasticity can be reduced during dicing, and the portion with a width W3 can be efficiently removed. Thus, the yield of the light-emitting device 100 can be improved.

[0034] Furthermore, in this embodiment, after removing the substrate 30 from the multiple semiconductor parts 10, the wavelength conversion members 12 are bonded to the upper surfaces of the multiple semiconductor parts 10 by a bonding member 13, and the thickness between the support substrate 20 and the wavelength conversion members 12 is thickness d2. Thickness d2 is narrower than the depth d7 of the groove M. Therefore, for example, when filling the space between the support substrate 20 and the wavelength conversion members 12, and from both ends of the multiple grooves M, the resin member 16 is filled into the space between the support substrate 20 and the wavelength conversion members 12 from the grooves M by so-called capillary action. In this way, compared to the case where the resin member 16 is formed between the support substrate 20 and the wavelength conversion members 12 after dividing the multiple semiconductor parts 10 by dicing, the light-emitting device 100 in which the resin member 16 is arranged between the support substrate 20 and the wavelength conversion members 12 can be manufactured efficiently.

[0035] Furthermore, according to the light-emitting device 100, the external dimensions of each element of the light-emitting device 100, which is positioned below the wavelength conversion member 12, are less than or equal to the external dimensions of the wavelength conversion member 12 in a plan view. Therefore, when multiple light-emitting devices 100 are arranged side by side, the distance between the wavelength conversion members 12 of adjacent light-emitting devices 100 can be shortened.

[0036] Furthermore, in the light-emitting device 100, the first support substrate 20a is covered with a first conductive part 21a and a second conductive part 22a, and the second support substrate 20b is covered with a first conductive part 21b and a second conductive part 22b. As a result, the semiconductor part 10 can be energized in the Z-axis direction through these conductive parts 21a, 21b, 22a, and 22b. Therefore, compared to a light-emitting device that energizes in the Z-axis direction using only the first support substrate 20a and the second support substrate 20b, the light-emitting device 100 can improve conductivity in the Z-axis direction.

[0037] In the above embodiment, the first conductive part 21a, the second conductive part 22aAlthough a configuration is described in which conductivity in the Z-axis direction is improved by the first conductive part 21b and the second conductive part 22b, the invention is not limited to this. For example, since the first support substrate 20a and the second support substrate 20b are made of conductive material, it is possible to ensure conductivity in the Z-axis direction even in a light-emitting device that does not have the first conductive part 21a, the second conductive part 22a, and the first conductive part 21b and the second conductive part 22b. Furthermore, although a configuration in which a plurality of semiconductor parts 10 are arranged on the substrate 30 is described in the above embodiment, a configuration in which only one semiconductor part 10 is arranged on the substrate 30 is also possible.

[0038] The embodiments include the following aspects:

[0039] (Note 1) The process of preparing a substrate on which the semiconductor part is placed, A step of preparing a conductive support substrate having a first surface and a second surface opposite to the first surface, wherein a groove is formed on the first surface, In a plan view, the semiconductor portion is positioned on the first surface such that it straddles the groove, and the semiconductor portion and the support substrate are electrically connected. A step of removing the substrate from the semiconductor part, A step of bonding a wavelength conversion member to the semiconductor portion from which the substrate has been removed, A step of filling the groove portion and the space between the support substrate and the wavelength conversion member with a light-reflective resin material, A step of removing a portion of the support substrate from the second surface side and exposing the resin member filled in the groove from the support substrate, A method for manufacturing a light-emitting device equipped with the following features.

[0040] (Note 2) Multiple semiconductor components are arranged on the substrate. A method for manufacturing a light-emitting device according to Appendix 1, further comprising the step of removing the wavelength conversion member, the resin member, and the support substrate located between the plurality of semiconductor parts in a plan view, after the step of exposing them from the support substrate, and dividing the device into a plurality of light-emitting devices.

[0041] (Note 3) Multiple semiconductor components are arranged on the substrate. Each of the plurality of semiconductor portions is provided with a first electrode portion and a second electrode portion arranged separately from the first electrode portion. Furthermore, a Zener diode electrically connected to the first electrode portion and the second electrode portion is provided for each of the semiconductor portions. In the connection step, the Zener diode is placed in the groove, as described in Appendix 1 or 2 for the method of manufacturing a light-emitting device.

[0042] (Note 4) In the process of preparing the support substrate, a support substrate is prepared having a plurality of grooves formed along the first direction, The method for manufacturing a light-emitting device according to Appendix 3, wherein, in the connecting step, the plurality of semiconductor parts and the support substrate are connected such that the Zener diodes provided in each of the plurality of semiconductor parts are arranged in one of the grooves.

[0043] (Note 5) The groove portion and the space between the support substrate and the wavelength conversion member are connected. A method for manufacturing a light-emitting device according to any one of the appendices 1 to 4, wherein in the step of filling the resin member, the resin member is added between the support substrate and the wavelength conversion member and filled by passing through the groove.

[0044] (Note 6) A method for manufacturing a light-emitting device according to any one of the appendices 1 to 5, wherein in the division step, the resin member and the support substrate are divided such that the external dimensions in a plan view are less than or equal to the external dimensions of the wavelength conversion member.

[0045] (Note 7) A method for manufacturing a light-emitting device according to any one of the appendices 1 to 6, wherein in the step of preparing the support substrate, a support substrate is prepared in which a first conductive member is formed on the first surface and the inner surface of the groove.

[0046] (Note 8) The method for manufacturing a light-emitting device according to Appendix 7, further comprising the step of forming a second conductive member on a third surface opposite to the first surface of the support substrate formed after the exposure step, so as to be electrically connected to the first conductive member.

[0047] (Note 9) A method for manufacturing a light-emitting device according to any one of the appendices 1 to 8, wherein in the step of filling the resin member, the resin member is formed between the support substrate and the wavelength conversion member, and the resin member is thinner than the thickness of the wavelength conversion member.

[0048] (Note 10) A semiconductor portion having a first surface and a second surface opposite to the first surface, A first electrode portion arranged on the first surface, A second electrode portion is disposed on the first surface at a distance from the first electrode portion, In a plan view, a conductive first support substrate is connected such that a portion of it overlaps the first electrode portion, In a plan view, a conductive second support substrate is connected such that a portion of it overlaps the second electrode portion, A wavelength conversion member disposed on the second surface, A light-reflective resin member is disposed between the wavelength conversion member and the first support substrate, between the wavelength conversion member and the second support substrate, and between the first support substrate and the second support substrate. A light-emitting device equipped with the following features.

[0049] (Note 11) The light-emitting device according to Appendix 10, wherein the thickness of the wavelength conversion member is greater than the thickness of the resin member disposed between the wavelength conversion member and the first support substrate.

[0050] (Note 12) The light-emitting device according to Appendix 10 or 11, wherein the thickness of the first support substrate and the second support substrate is greater than the thickness of the resin member disposed between the wavelength conversion member and the first support substrate.

[0051] (Note 13) The first electrode portion and the second electrode portion further include a Zener diode electrically connected to the side opposite to the semiconductor portion, The light-emitting device according to any one of appendices 10 to 12, wherein the Zener diode is disposed within the resin member between the first support substrate and the second support substrate.

[0052] (Note 14) In a plan view, the resin member, the first support substrate, and the second support substrate are arranged inside the outer shape of the wavelength conversion member, as described in any one of appendices 10 to 13. [Explanation of Symbols]

[0053] 10...Semiconductor part, 11a...First electrode part, 11b ...Second electrode section, 12...Wavelength conversion member, 13...Bonding member, 14a,14b...Conductive part, 15...Zener diode, 16...Resin member, 20...Support substrate, 20a...First support substrate, 20b...Second support substrate, 21...First conductive member, 21a,21b...First conductive part, 22...Second conductive member, 22a,22b...Second conductive part, 30...Substrate, 100...Light-emitting device, d1,d2,d3,d4,d5...Thickness, M...Groove section, W1,W2,W3...Width

Claims

1. The process of preparing a substrate on which the semiconductor part is placed, A step of preparing a conductive support substrate having a first surface and a second surface opposite to the first surface, wherein a groove is formed on the first surface, In a plan view, the semiconductor portion is positioned on the first surface such that it straddles the groove, and the semiconductor portion and the support substrate are electrically connected. A step of removing the substrate from the semiconductor part, A step of bonding a wavelength conversion member to the semiconductor portion from which the substrate has been removed, A step of filling the groove portion and the space between the support substrate and the wavelength conversion member with a light-reflective resin material, A step of removing a portion of the support substrate from the second surface side and exposing the resin member filled in the groove from the support substrate, A method for manufacturing a light-emitting device equipped with the necessary components.

2. Multiple semiconductor components are arranged on the substrate. The method for manufacturing a light-emitting device according to claim 1, further comprising the step of removing the wavelength conversion member, the resin member, and the support substrate located between the semiconductor parts in a plan view, after the step of exposing them from the support substrate, and dividing the device into a plurality of light-emitting devices.

3. Multiple semiconductor components are arranged on the substrate. Each of the plurality of semiconductor portions is provided with a first electrode portion and a second electrode portion arranged separately from the first electrode portion. Furthermore, a Zener diode electrically connected to the first electrode portion and the second electrode portion is provided for each of the semiconductor portions. The method for manufacturing a light-emitting device according to claim 1, wherein in the connection step, the Zener diode is placed in the groove.

4. In the process of preparing the support substrate, a support substrate is prepared having a plurality of grooves formed along the first direction, The method for manufacturing a light-emitting device according to claim 3, wherein, in the connecting step, the plurality of semiconductor parts and the support substrate are connected such that the Zener diodes provided in each of the plurality of semiconductor parts are arranged in one of the grooves.

5. The groove portion and the space between the support substrate and the wavelength conversion member are connected. The method for manufacturing a light-emitting device according to claim 1, wherein in the step of filling the resin member, the resin member is added between the support substrate and the wavelength conversion member and filled by passing through the groove.

6. The method for manufacturing a light-emitting device according to claim 2, wherein in the division step, the resin member and the support substrate are divided such that the external dimensions in a plan view are less than or equal to the external dimensions of the wavelength conversion member.

7. The method for manufacturing a light-emitting device according to claim 1, wherein in the step of preparing the support substrate, a support substrate is prepared in which a first conductive member is formed on the first surface and the inner surface of the groove.

8. The method for manufacturing a light-emitting device according to claim 7, further comprising the step of forming a second conductive member on a third surface opposite to the first surface of the support substrate formed by removing the portion after the exposure step, so as to be electrically connected to the first conductive member.

9. A method for manufacturing a light-emitting device according to any one of claims 1 to 8, wherein in the step of filling the resin member, the resin member is formed between the support substrate and the wavelength conversion member, with the resin member being thinner than the thickness of the wavelength conversion member.

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