Method for manufacturing a light-emitting device

Abstract

To provide a manufacturing method for a highly reliable light-emitting device.SOLUTION: A manufacturing method of a light-emitting device includes steps of preparing a first structure, preparing a second structure, and transferring a light emitting element. The first structure includes a first substrate, a release layer disposed on a first surface of the first substrate, and one or more light emitting elements fixed to the first substrate via the release layer. The light emitting element has a third surface facing the release layer and a fourth surface opposite to the third surface. The fourth surface is larger than the third surface in plan view. In plan view, the release layer includes the fourth surface. The second structure includes a second substrate. In the step of transferring the light emitting element, in a state in which the first surface of the first substrate faces the top surface of the second substrate, the release layer is removed and the light emitting element is transferred from the first substrate to the second substrate by irradiating the release layer with laser light from the second surface side of the first substrate.SELECTED DRAWING: Figure 10

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a method for manufacturing a light-emitting device.

Background Art

[0002] Patent Document 1 discloses a light-emitting device in which a plurality of light-emitting elements are arranged on a substrate. In such a light-emitting device, improvement in reliability is required.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An embodiment of the present disclosure aims to provide a method for manufacturing a highly reliable light-emitting device.

Means for Solving the Problems

[0005] A method for manufacturing a light-emitting device according to an embodiment comprises the steps of preparing a first structure, preparing a second structure, and transferring light-emitting elements. The first structure includes a first substrate having a first surface and a second surface opposite to the first surface, a release layer disposed on the first surface, and one or more light-emitting elements fixed to the first surface side of the first substrate via the release layer. The one or more light-emitting elements have a third surface facing the release layer and a fourth surface opposite to the third surface. In plan view, the fourth surface is larger than the third surface. In plan view, the release layer encloses the fourth surface. The second structure includes a second substrate having an upper surface. In the step of transferring the light-emitting elements, with the first surface of the first substrate facing the upper surface of the second substrate so that the one or more light-emitting elements are positioned between the first and second substrates, the release layer is removed by irradiating the release layer from the second surface side of the first substrate with laser light to transfer the one or more light-emitting elements from the first substrate to the second substrate. [Effects of the Invention]

[0006] According to the embodiments of this disclosure, a highly reliable method for manufacturing a light-emitting device can be realized. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 2] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 3] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 4] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 5] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 6] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 7]This is a schematic plan view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 8] Figure 7 is an end view taken along the line VIII-VIII. [Figure 9] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 10] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 11] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 12] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 13] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 14] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 15] This is a schematic end view showing a method for manufacturing a light-emitting device according to the first embodiment. [Figure 16A] This is a schematic end view showing the rework process after the transfer of the light-emitting element. [Figure 16B] This is a schematic end view showing the rework process after the transfer of the light-emitting element. [Figure 16C] This is a schematic end view showing the rework process after the transfer of the light-emitting element. [Figure 16D] This is a schematic end view showing the rework process after the transfer of the light-emitting element. [Figure 17] This is a schematic end view showing a method for manufacturing a light-emitting device according to a first modification of the first embodiment. [Figure 18] This is a schematic end view showing a method for manufacturing a light-emitting device according to a first modification of the first embodiment. [Figure 19] This figure schematically shows a galvanometer laser apparatus used in a second modified example of the first embodiment. [Figure 20] This is a schematic end view showing a method for manufacturing a light-emitting device according to a second modified example of the first embodiment. [Figure 21] It is a diagram showing the intensity distribution of laser light. [Figure 22] It is a perspective view seen from the upper diagonal to schematically show a light-emitting device according to a second embodiment. [Figure 23] It is a perspective view seen from the lower diagonal to schematically show a light-emitting device according to a second embodiment. [Figure 24] It is a partially enlarged top view showing region XXIV of FIG. 22. [Figure 25] It is a cross-sectional view taken along line XXV-XXV shown in FIG. 22. [Figure 26A] It is a partially enlarged cross-sectional view showing region XXVIA of FIG. 25. [Figure 26B] It is a partially enlarged cross-sectional view showing region XXVIB of FIG. 26A. [Figure 27A] It is an end view schematically showing a manufacturing method of a light-emitting device according to a second embodiment. [Figure 27B] It is an end view schematically showing a manufacturing method of a light-emitting device according to a second embodiment.

Embodiments for Carrying Out the Invention

[0008] Hereinafter, a method for manufacturing a light-emitting device according to an embodiment of the present disclosure will be described with reference to the drawings.In the following, forms for embodying the technical idea of the present embodiment are exemplified and are not limited to the following. Also, dimensions, materials, shapes, or relative arrangements of the components described in the embodiments are not intended to limit the scope of the present disclosure only to those, but are merely illustrative examples. Note that the sizes or positional relationships of the members shown in each drawing may be exaggerated for clarity of explanation. Also, in the following description, the same names or reference numerals indicate the same or similar members, and detailed descriptions thereof are omitted as appropriate. Also, as a cross-sectional view, there may be a case where an end view showing only a cut surface is shown.

[0009] In the following description, terms indicating specific directions or positions (e.g., "up," "down," and other terms including these) may be used. However, these terms are used merely for clarity to indicate the relative directions or positions in the referenced drawings. If the relative directional or positional relationships expressed by terms such as "up" and "down" in the referenced drawings are the same, the arrangement in drawings other than those disclosed or in actual products may not be identical to those in the referenced drawings. In this specification, the positional relationship expressed as "up (or down)" may include, for example, both cases where two members are touching and cases where the two members are not touching but one member is located above (or below) the other member. Also, the same terminology may be used for each layer before and after division if it is divided into multiple layers.

[0010] <First Embodiment> Figures 1 to 6 are end views showing the manufacturing method of the light-emitting device according to this embodiment. Figure 7 is a plan view showing the manufacturing method of the light-emitting device according to this embodiment. Figure 8 is an end view taken along the line VIII-VIII shown in Figure 7. Figures 9 to 15 are end views showing the manufacturing method of the light-emitting device according to this embodiment.

[0011] A method for manufacturing the light-emitting device 1 according to the first embodiment comprises the steps of preparing a first structure 10, preparing a second structure 20, and transferring a light-emitting element 50.

[0012] (Steps to prepare the first structure) The steps for preparing the first structure 10 include preparing the third structure 30, preparing the fourth structure 40, bonding the third structure 30 and the fourth structure 40 together, and removing the support substrate 60. The first structure 10 prepared in this manner includes a first substrate 11 having a first surface 11a and a second surface 11b, a release layer 12 disposed on the first surface 11a, and one or more light-emitting elements 50 fixed to the first surface 11a side of the first substrate 11 via the release layer 12. The following describes each step in detail.

[0013] First, as shown in Figure 1, a support substrate 60 and one or more light-emitting elements 50 arranged on the upper surface 60a of the support substrate 60 are prepared. The support substrate 60 is, for example, a silicon substrate or a sapphire substrate. The support substrate 60 may be a growth substrate. The support substrate 60 has an upper surface 60a and is, for example, a flat substrate. The method for forming the portion that will become one or more light-emitting elements 50 is, for example, to grow a semiconductor multilayer film on the upper surface 60a of the support substrate 60 by the MOCVD (Metal Organic Chemical Vapor Deposition) method and to form an electrode portion 52 thereon. Next, a part of the semiconductor multilayer film is removed by dry etching or wet etching such as the RIE (Reactive Ion Etching) method. This forms the portion that will become one or more light-emitting elements 50 (hereinafter also simply referred to as "light-emitting elements 50"). The one or more light-emitting elements 50 are, for example, arranged in a matrix along two mutually orthogonal directions in a plan view.

[0014] The light-emitting element 50 includes a semiconductor laminate 51 and an electrode portion 52. Semiconductor laminate 51 In x Al y Ga 1-x-y This includes nitride semiconductors such as N(0≦x, 0≦y, x+y≦1). Semiconductor laminate 51 The semiconductor laminate 51 includes a p-type layer, an n-type layer, and a light-emitting layer located between the p-type and n-type layers. The light-emitting layer can include, for example, a plurality of barrier layers and a plurality of well layers, and can be a multiple quantum well structure in which the barrier layers and well layers are alternately stacked. The electrode portion 52 includes a p-side electrode connected to the p-type layer and an n-side electrode connected to the n-type layer. The electrode portion 52 has an electrode surface 52a on the opposite side of the semiconductor laminate 51.

[0015] The light-emitting element 50 has a fourth surface 50b facing the support substrate 60, a third surface 50a on the opposite side of the fourth surface 50b, and a fifth surface 50c connecting the third surface 50a and the fourth surface 50b. The electrode portion 52 is located on the third surface 50a side. The fifth surface 50c may include a recess or a protrusion.

[0016] In a plan view, the fourth surface 50b is larger than the third surface 50a. Also, in a plan view, the outline of the fourth surface 50b is located outside the outline of the third surface 50a. The planar area of ​​the fourth surface 50b is, for example, 1.1 to 2 times, preferably 1.1 to 1.5 times, and more preferably 1.1 to 1.2 times, compared to the planar area of ​​the third surface 50a. In the first embodiment, the fifth surface 50c is inclined with respect to a direction perpendicular to the upper surface 60a of the support substrate 60. In one example, the shape of the light-emitting element 50 is a frustoconical pyramid. When the shape of the light-emitting element 50 is a frustoconical pyramid, the fourth surface 50b corresponds to the bottom surface of the frustoconical pyramid, the third surface 50a corresponds to the top surface of the frustoconical pyramid, and the fifth surface 50c corresponds to the side surface of the frustoconical pyramid.

[0017] Next, as shown in Figure 2, the optical attenuation layer 13 is placed on the upper surface 60a of the support substrate 60. The optical attenuation layer 13 covers the semiconductor laminate 51 and the electrode portion 52. In the first embodiment, the optical attenuation layer 13 covers the upper surface 60a of the support substrate 60 between adjacent light-emitting elements 50, and the third surface 50a and fifth surface 50c of the light-emitting elements 50, and encloses the semiconductor laminate 51 and the electrode portion 52. The optical attenuation layer 13 is, for example, a resin material. The optical attenuation layer 13 may be, for example, a black resin material. The optical attenuation layer 13 may, for example, include epoxy resin, acrylic resin, or polyimide resin as its main component.

[0018] Next, as shown in Figure 3, the light attenuation layer 13 located above the electrode portion 52 is removed. The removal of the light attenuation layer 13 is performed, for example, using a grinding device. At this time, as the light attenuation layer 13 is removed, the electrode portion 52 is also removed from the electrode surface 52a side, and a new electrode surface 52b is formed on the electrode portion 52. By removing the light attenuation layer 13 located above the electrode portion 52, the electrode surface 52b of the electrode portion 52 is exposed from the light attenuation layer 13. In the first embodiment, the electrode surface 52b of the electrode portion 52, the upper surface of the light attenuation layer 13 that fits between the electrode surfaces 52b of each light-emitting element 50, and the upper surface of the light attenuation layer 13 that fits between adjacent light-emitting elements 50 are located on the same plane. In this way, the third structure 30 is prepared.

[0019] The third structure 30 includes a support substrate 60, one or more light-emitting elements 50 arranged on the support substrate 60, and a light attenuation layer 13. The light attenuation layer 13 is arranged around each light-emitting element 50 and holds each light-emitting element 50. The light attenuation layer 13 penetrates between the electrode portions 52 of each light-emitting element 50 and between adjacent light-emitting elements 50. The light attenuation layer 13 prevents the light-emitting elements 50 from scattering when the support substrate 60 is removed in a later process and fixes the position of the light-emitting elements 50. The electrode surface 52b of the electrode portion 52 is exposed from the light attenuation layer 13.

[0020] Next, as shown in Figure 4, the fourth structure 40 is prepared. The step of preparing the fourth structure 40 may be performed before, after, or simultaneously with the step of preparing the third structure 30. The fourth structure 40 includes a first substrate 11 and a release layer 12. The first substrate 11 is a substrate that can transmit laser light 80, which will be described later, and is, for example, a sapphire substrate. The first substrate 11 has a first surface 11a and a second surface 11b on the opposite side of the first surface 11a. The release layer 12 is disposed on the first surface 11a of the first substrate 11. The release layer 12 may be, for example, a material that can absorb laser light 80, which will be described later, and be removed by laser ablation, and is, for example, a photosensitive resin.

[0021] Next, as shown in Figure 5, with the electrode surface 52b of the electrode portion 52 in the third structure 30 and the release layer 12 in the fourth structure 40 facing each other, the electrode surface 52b of the electrode portion 52 and the release layer 12 are bonded together via the adhesive layer 70. The adhesive layer 70 is in contact with the electrode surface 52b of the electrode portion 52 of the third structure 30, the light attenuation layer 13 that penetrates between the electrode portions 52 of each light-emitting element 50, and the light attenuation layer 13 that penetrates between adjacent light-emitting elements 50 on its upper surface. The adhesive layer 70 is also in contact with the upper surface of the release layer 12 on its lower surface.

[0022] The adhesive layer 70 is, for example, a sheet-like member. Immediately before bonding the third structure 30 and the fourth structure 40, the adhesive layer 70 may be positioned on the third structure 30 side or on the fourth structure 40 side. The adhesive layer 70 may be formed from a known material. The adhesive layer 70 mainly contains thermosetting resins such as silicone resin, silicone-modified resin, epoxy resin, and phenolic resin, or thermoplastic resins such as polycarbonate resin, acrylic resin, methylpentene resin, and polynorbornene resin.

[0023] Next, as shown in Figure 6, the support substrate 60 is removed. The support substrate 60 can be removed by methods such as the Laser Lift Off (LLO) method, grinding, polishing, or etching. As a result, the fourth surface 50b of the light-emitting element 50 and the light attenuation layer 13 between the light-emitting elements 50 are exposed to the outside on the side from which the support substrate 60 was removed.

[0024] Next, as shown in Figures 7 and 8, the light-attenuating layer 13, adhesive layer 70, and release layer 12 are selectively removed to separate each light-emitting element 50. The selective removal of the light-attenuating layer 13, etc., is performed by etching, for example, by CMP (Chemical Mechanical Polishing) or RIE. In the first embodiment, the light-attenuating layer 13, adhesive layer 70, and release layer 12 are separated between adjacent light-emitting elements 50. As a result, the upper surface 11a of the first substrate 11 is exposed to the outside between adjacent light-emitting elements 50. In addition, each layer 12a, which has been divided into multiple layers 12a, is arranged in pairs with the light-emitting elements 50. In this way, the first structure 10 is prepared. In the first structure 10, the release layer 12 is a collective term for multiple layers 12a.

[0025] The first structure 10 includes a first substrate 11 and a plurality of structures 15. The first substrate 11 has a first surface 11a and a second surface 11b opposite to the first surface 11a. The plurality of structures 15 are arranged on the first surface 11a of the first substrate 11. The structures 15 include, in order from the first surface 11a side of the first substrate 11, a layer 12a of the release layer 12, an adhesive layer 70, and a light-emitting element 50, and include a light-attenuating layer 13 arranged around the light-emitting element 50. The release layer 12 is arranged on the first surface 11a of the first substrate 11. The light-emitting element 50 is fixed to the first surface 11a side of the first substrate 11 via the adhesive layer 70 and the layer 12a of the release layer 12. The light-attenuating layer 13 is arranged between the adhesive layer 70 and the light-emitting element 50. The light-attenuating layer 13 covers the third surface 50a and the fifth surface 50c of the light-emitting element 50, but does not cover the fourth surface 50b. The adhesive layer 70 is positioned between the release layer 12 and the light attenuation layer 13, and between the release layer 12 and the light-emitting element 50.

[0026] The light-emitting element 50 has a third surface 50a facing the release layer 12, a fourth surface 50b opposite to the third surface 50a, and a fifth surface 50c connecting the third surface 50a and the fourth surface 50b. An electrode portion 52 is positioned on the third surface 50a side of the light-emitting element 50, and the electrode surface 52b of the electrode portion 52 is in contact with the adhesive layer 70. In a plan view, the fourth surface 50b is larger than the third surface 50a. Also in a plan view, each layer 12a of the release layer 12 encloses the fourth surface 50b of the light-emitting element 50.

[0027] (Preparation of the second structure) Next, as shown in Figure 9, the second structure 20 is prepared. The step of preparing the second structure 20 may be performed before, after, or simultaneously with the step of preparing the first structure 10. The second structure 20 includes a second substrate 21 and an adhesive layer 22. The second substrate 21 is, for example, a glass substrate. The second substrate 21 has an upper surface 21a, and the adhesive layer 22 is placed on the upper surface 21a of the second substrate 21. The adhesive layer 22 can be, for example, a resin member containing a silicone resin or an acrylic resin as a base material.

[0028] (Process of transferring light-emitting elements) Next, as shown in Figure 10, the first structure 10 is positioned opposite the second structure 20. Specifically, the first surface 11a of the first substrate 11 and the upper surface 21a of the second substrate 21 are positioned opposite each other so that the light-emitting element 50 is placed between the first substrate 11 and the second substrate 21. At this time, the first structure 10 is positioned away from the second structure 20. That is, the light-emitting element 50 is separated from the adhesive layer 22.

[0029] In this state, laser light 80 is irradiated onto the delamination layer 12 from the second surface 11b side of the first substrate 11. The laser light 80 is light that can penetrate the first substrate 11 and remove the delamination layer 12. Irradiation with laser light 80 is performed using, for example, a medium- or long-wave laser. The laser light 80 is, for example, light having an emission peak wavelength in the wavelength range of 150 nm to 1600 nm, preferably light having an emission peak wavelength in the wavelength range of 150 nm to 600 nm, and more preferably light having an emission peak wavelength in the wavelength range of 250 nm to 400 nm. The laser light 80 penetrates the first substrate 11 in the direction from the second surface 11b toward the first surface 11a and reaches the delamination layer 12. The laser light 80 is irradiated onto, for example, only one layer 12a in a single irradiation. However, the laser light 80 may be irradiated onto two or more layers 12a in a single irradiation, or it may be irradiated onto all layers 12a. Furthermore, the laser light 80 may be irradiated onto each layer 12a two or more times.

[0030] As a result, as shown in Figure 11, layer 12a of the release layer 12 irradiated with laser light 80 is removed. This removal includes, for example, the sublimation and disappearance of layer 12a of the release layer 12. When layer 12a is removed by sublimation, the light-emitting element 50 separates from the first substrate 11, and the volume expansion accompanying the sublimation of layer 12a biases the light-emitting element 50 toward the second substrate 21. As a result, the light-emitting element 50 moves from the first substrate 11 toward the second substrate 21. If the first substrate 11 is placed above the second substrate 21, the light-emitting element 50 is also biased toward the second substrate 21 by gravity. Insofar as the light-emitting element 50 is transferred, layer 12a of the release layer 12 may be completely removed or only partially removed. In addition to the release layer 12, at least a portion of the adhesive layer 70 located below the release layer 12 may also be removed by the laser light 80.

[0031] The light-emitting element 50, having detached from the first substrate 11, reaches the adhesive layer 22 of the second structure 20 and is bonded to the second substrate 21 via the adhesive layer 22. Thereafter, by repeatedly irradiating the other layers 12a of the release layer 12 with laser light 80, multiple light-emitting elements 50 are sequentially moved from the first substrate 11 to the second substrate 21. In this way, one or more light-emitting elements 50 are transferred from the first substrate 11 to the second substrate 21. At least a portion of the light-attenuation layer 13 and the adhesive layer 70 remains on the light-emitting elements 50.

[0032] Next, as shown in Figure 12, the light attenuation layer 13 is removed. The method for removing the light attenuation layer 13 is, for example, an etching method such as the RIE method. By removing the light attenuation layer 13, the adhesive layer 70 placed on the light attenuation layer 13 is also removed simultaneously. Alternatively, after removing the light attenuation layer 13 by the RIE method, a washing step using pure water or the like may be performed.

[0033] Next, as shown in Figure 13, the light-emitting element 50, which is placed on the second substrate 21, is placed on the wiring board 31. Specifically, a wiring board 31 having wiring on its upper surface is prepared, and the light-emitting element 50 is placed on the upper surface of the wiring board 31 with the electrode portion 52 of the light-emitting element 50 facing downwards. The electrode portion 52 of the light-emitting element 50 and the wiring on the wiring board 31 are electrically connected. The electrical connection between the electrode portion 52 of the light-emitting element 50 and the wiring on the wiring board 31 is made, for example, via a bonding member. The bonding member is made of, for example, gold or copper.

[0034] Next, as shown in Figure 14, the second substrate 21 is removed together with the adhesive layer 22. In this way, the light-emitting device 1 according to this embodiment is manufactured. The light-emitting device 1 may also include a phosphor member containing a phosphor that wavelength-converts at least a portion of the light from the light-emitting element 50, as in the second embodiment described later, and a highly light-reflective resin member arranged around the light-emitting element 50.

[0035] The first structure 10, the second structure 20, the third structure 30, and the fourth structure 40 may be prepared by the above manufacturing process, or by acquisition or other means.

[0036] Furthermore, as shown in Figure 15, in the step of irradiating with laser light 80, it is not necessary to irradiate some of the light-emitting elements 50 with laser light. Specifically, the process for manufacturing the light-emitting device 1 may include, in the step of preparing the first structure 10, a step of inspecting each light-emitting element 50 and detecting any defective light-emitting elements 50N in this inspection, and in the step of transferring one or more light-emitting elements, a step of irradiating the layers 12a of the peeling layer 12 other than the layer 12a corresponding to the light-emitting elements 50N that were determined to be defective in the inspection with laser light 80. The inspection may be a visual inspection to check the appearance of the light-emitting elements 50, or an electrical characteristic evaluation to evaluate the electrical characteristics of the light-emitting elements 50. This makes it possible to transfer only the good light-emitting elements 50 without transferring the defective light-emitting elements 50N. In this way, since the light-emitting elements 50N that were determined to be defective in the visual inspection, etc., can be removed, only the good light-emitting elements 50 can be used in subsequent processes. Alternatively, good light-emitting elements 50 may be detected by inspection, and the laser beam 80 may be irradiated onto the layer 12a of the peeling layer 12 corresponding to the good light-emitting elements 50 to transfer only the good light-emitting elements 50.

[0037] Furthermore, the process for manufacturing the light-emitting device 1 may further include a rework process after the process of transferring one or more light-emitting elements 50. The rework process includes inspecting the transfer state of the light-emitting elements 50 on the second substrate 21 after transfer, detecting any light-emitting elements 50R with a faulty transfer state or areas R where no light-emitting elements 50 are placed, removing any light-emitting elements 50R with a faulty transfer state, and placing a new light-emitting element 50 in the area where the removed light-emitting element 50R was placed or in the area R where no light-emitting elements 50 are placed.

[0038] Figures 16A to 16D are end views showing the rework process after the transfer of the light-emitting element. Specifically, as shown in Figure 16A, the transfer state of the light-emitting elements 50 on the second substrate 21 after transfer is inspected, and light-emitting elements 50R with a poor transfer state or regions R where no light-emitting elements 50 are placed are detected. Light-emitting elements 50R with a poor transfer state include light-emitting elements whose position after transfer is shifted in one direction from the reference position. Region R is a region where light-emitting elements 50 should be placed, but in reality, no light-emitting elements 50 are placed. First, such light-emitting elements 50R with a poor transfer state and regions R are detected by visual inspection.

[0039] Next, if the transferred state includes a light-emitting element 50R with a faulty transfer state, the light-emitting element 50R with a faulty transfer state is removed as shown in Figure 16B. The method for removing the light-emitting element 50R is, for example, to press the pressing part 86 against the light-emitting element 50R via the adhesive sheet 85, thereby adhering the light-emitting element 50R to the adhesive sheet 85. Next, the pressing part 86 and the adhesive sheet 85 are separated from the second substrate 21. This removes the light-emitting element 50R from the second substrate 21 together with the adhesive sheet 85.

[0040] Next, as shown in Figure 16C, a new light-emitting element 50 is placed in the region or region R where the removed light-emitting element 50R was located. One method for placing the new light-emitting element 50 is to prepare a first structure 10 including the new light-emitting element 50, irradiate the light-emitting element 50 corresponding to the region or region R where the light-emitting element 50R was located with laser light 80, and perform the transfer process again. As a result, as shown in Figure 16D, good quality light-emitting elements 50 are placed in all regions on the second substrate 21 where light-emitting elements 50 should be placed.

[0041] Next, the effects and advantages of this embodiment will be described. In the light-emitting device 1 according to this embodiment, the fourth surface 50b of the light-emitting element 50 is larger than the third surface 50a. Furthermore, the fifth surface 50c is inclined with respect to the third surface 50a and is provided to spread out in the direction from the third surface 50a to the fourth surface 50b. As a result, light from the light-emitting layer of the light-emitting element 50 is efficiently reflected by the fifth surface 50c and easily directed toward the fourth surface 50b, which is the light-emitting surface. Consequently, the light-emitting device 1 has a high light extraction efficiency.

[0042] Furthermore, in the process of irradiating with laser light, in a plan view, layer 12a of the peeling layer 12 encloses the fourth surface 50b of the light-emitting element 50. Therefore, the light-emitting element 50 is not directly irradiated with the laser light 80 until layer 12a is removed. This suppresses damage to the light-emitting element 50 by the laser light 80. As a result, the reliability of the light-emitting device 1 is improved.

[0043] Furthermore, in this embodiment, during the process of irradiating with laser light 80, the optical attenuation layer 13 covers the third surface 50a and the fifth surface 50c of the light-emitting element 50, so that a portion of the laser light 80 that has passed through layer 12a is absorbed by the optical attenuation layer 13. As a result, the amount of laser light 80 reaching the light-emitting element 50 is reduced, and damage to the light-emitting element 50 can be suppressed. This also improves the reliability of the light-emitting device 1.

[0044] <First variation of the first embodiment> Figures 17 and 18 are end views showing the manufacturing method of the light-emitting device according to this modified example. This modified example differs from the first embodiment in that the release layer 12 is a single continuous layer. In this modified example, in the first structure 10, the release layer 12 is not divided into multiple layers 12a, but is a single continuous layer.

[0045] In this modified example, the release layer 12 is formed, for example, in the process shown in Figures 7 and 8, by etching the light attenuation layer 13 and the adhesive layer 70 without completely dividing the release layer 12. The release layer 12 may be a continuous layer, and a portion of it in the thickness direction may be removed by etching or the like. In this case, in a plan view, the release layer 12 encompasses all of the fourth surfaces 50b of the multiple light-emitting elements 50 included in the first structure 10.

[0046] Then, the laser beam 80 is irradiated onto the portion 12b of the release layer 12 corresponding to one of the light-emitting elements 50. As a result, as shown in Figure 18, the portion 12b of the release layer 12 sublimes, and the light-emitting element 50 moves from the first substrate 11 to the second substrate 21. The manufacturing method, configuration, and effects of this modified example are the same as those of the first embodiment, except as described above.

[0047] <Second variation of the first embodiment> Figure 19 shows the galvanometer-type laser device used in this modified example. Figure 20 is an end view showing a method for manufacturing the light-emitting device according to this modified example. Figure 21 shows the intensity distribution of laser light.

[0048] This modified version differs from the first embodiment in that a galvanometer-type laser device is used in the process of irradiating with laser light 80. Specifically, in the process of irradiating with laser light 80, the laser light 80 is irradiated to the portion of each of the multiple light-emitting elements 50 in the peeling layer 12 while controlling the emission direction of the laser light 80 using a galvanometer-type device.

[0049] As shown in Figure 19, the galvanometer-type laser irradiation device 90 is provided with, for example, two galvanometer mirrors 91 and 92 and a lens 93. The direction in which the laser beam 80 is incident from the perspective of the laser irradiation device 90 is defined as the "X direction", the direction from the upper surface of the first structure 10 toward the lens 93 is defined as the "Z direction", and the direction perpendicular to the X and Z directions is defined as the "Y direction".

[0050] The galvanometer mirror 91 can rotate at any angle around a rotation axis 91c extending in the Z direction. The galvanometer mirror 92 can rotate at any angle around a rotation axis 92c extending in the X direction. The lens 93 is positioned where the laser light emitted from the galvanometer mirror 92 enters.

[0051] Laser light 80 is incident on the galvanometer mirror 91 from the X direction. The galvanometer mirror 91 controls the reflection direction of the laser light 80 in the Y direction. The laser light 80 reflected by the galvanometer mirror 91 is incident on the galvanometer mirror 92. The galvanometer mirror 92 controls the reflection direction of the laser light 80 in the X direction. The laser light 80 reflected by the galvanometer mirror 92 is focused at the irradiation target position by the lens 93. In this modified example, the first structure 10 is placed at the irradiation target position.

[0052] As shown in Figure 20, the laser beam 80 emitted from the galvanometer-type laser irradiation device 90 is sequentially irradiated onto the portion of the peeling layer 12 corresponding to each light-emitting element 50, for example, layer 12a. As a result, layer 12a is removed, and the light-emitting elements 50 move from the first structure 10 to the second structure 20.

[0053] When using a galvanometer-type laser irradiation device 90, the laser beam 80 is irradiated obliquely to the third surface 50a of the light-emitting element 50, which is located at the edge of the irradiable area of ​​the laser beam 80. In this case, the laser beam 80 is more likely to irradiate the fifth surface 50c of the light-emitting element 50. However, in the manufacturing method of the light-emitting device of this disclosure, by arranging an optical attenuation layer 13 on the fifth surface 50c, the obliquely irradiated laser beam 80 can be effectively absorbed by the optical attenuation layer 13. This makes it possible to suppress damage to the light-emitting element 50 by the laser beam 80.

[0054] Similar to the first embodiment, if a defective light-emitting element 50N is detected in the first structure 10, the laser beam 80 may be irradiated only to the layer 12a of the peeling layer 12 corresponding to the good light-emitting element 50. In the galvanometer-type laser irradiation device 90, the irradiation target can be selected and irradiated, so good light-emitting elements 50 can be efficiently and selectively irradiated. In the galvanometer-type laser irradiation device 90, the laser beam can be irradiated to any light-emitting element by changing the angle of the two galvanometer mirrors, so the time required for laser beam irradiation can be shortened compared to, for example, a laser irradiation device that irradiates laser beam while moving a nozzle.

[0055] Furthermore, similar to the first embodiment, a rework step may be included after the step of transferring one or more light-emitting elements 50. In the step of arranging new light-emitting elements 50 in the rework step, selective transfer can be performed using a galvanometer-type laser irradiation device 90.

[0056] As shown in Figure 21, the intensity distribution of the laser light 80 is preferably top-hat shaped. This stabilizes the sublimation process of the peeling layer 12 and improves the accuracy of the transfer of the light-emitting element 50. For example, it improves the accuracy of the transfer position of the light-emitting element 50 on the second substrate 21 and suppresses the tilting of the light-emitting element 50 when it reaches the second substrate 21. The manufacturing method, configuration, and effects of this modified example other than those described above are the same as in the first embodiment.

[0057] <Second Embodiment> The second embodiment is a specific example of the method for manufacturing the light-emitting device according to the first embodiment described above.

[0058] First, the configuration of the light-emitting device according to this embodiment will be described. Figure 22 is a schematic perspective view of the light-emitting device according to this embodiment, taken from an oblique upward position. Figure 23 is a schematic perspective view of the light-emitting device according to this embodiment, taken from a diagonally downward side. Figure 24 is a partially enlarged top view showing region XXIV in Figure 22. Figure 25 is a cross-sectional view taken along the line XXV-XXV shown in Figure 22. Figure 26A is a partially enlarged cross-sectional view showing region XXVIA in Figure 25. Figure 26B is a partially enlarged cross-sectional view showing region XXVIB of Figure 26A.

[0059] In this embodiment, for the sake of explanation, we will use the XYZ Cartesian coordinate system. The longitudinal direction of the package substrate 110 will be referred to as the "X direction," the transverse direction as the "Y direction," and the thickness direction as the "Z direction." Within the Z direction, the direction from the bottom surface 110b to the top surface 110a of the package substrate 110 will also be referred to as "up," and the opposite direction as "down." However, this expression is for convenience only and is unrelated to the direction of gravity.

[0060] As shown in Figures 22 to 24, the light-emitting device 101 according to this embodiment comprises a package substrate 110, a wiring board 120 disposed on the upper surface of the package substrate 110, a plurality of light-emitting elements 130 disposed on the upper surface of the wiring board 120, a light-reflective member 140 disposed between the light-emitting elements 130 and covering the sides of the light-emitting elements 130, a wavelength conversion member 150 disposed above the plurality of light-emitting elements 130, a plurality of wires 160 electrically connecting the package substrate 110 and the wiring board 120, and a covering member 170 covering the wires 160. In Figure 22, for the sake of illustration, a portion of the covering member 170 and a portion of the wavelength conversion member 150 are omitted, and a portion of the wires 160 and a portion of the light-emitting elements 130 are made visible.

[0061] The package substrate 110 has a rectangular shape in plan view. The package substrate 110 includes an insulating substrate 111, such as ceramics or resin, as a base material. The package substrate 110 includes a plurality of first pads 112 on its upper surface 110a and a plurality of second pads 113 on its lower surface 110b. The first pads 112 and the second pads 113 are electrically connected by conductive vias, such as copper (Cu), which are placed inside the insulating substrate 111.

[0062] Furthermore, heat dissipation sections 114, made of, for example, copper, are exposed on the upper surface 110a and lower surface 110b of the package substrate 110. For example, materials such as aluminum or copper, which have excellent thermal conductivity, can be used for the heat dissipation sections 114. In a plan view, the heat dissipation sections 114 are located in the center of the package substrate 110. The first pads 112 and the second pads 113 are located on both sides of the heat dissipation sections 114 in the Y direction. The first pads 112 and the second pads 113 are arranged, for example, along the long side of the package substrate 110.

[0063] The wiring board 120 is placed on the heat dissipation section 114 of the package board 110. The wiring board 120 is, for example, a silicon substrate with an integrated circuit built in, for example, an Application Specific Integrated Circuit (ASIC) substrate. The lower surface of the wiring board 120 is joined to the upper surface of the heat dissipation section 114, for example, via a bonding member. For example, silicone silver paste is used as the bonding member. Electrodes corresponding to each light-emitting element 130 are arranged in the center of the upper surface 121 of the wiring board 120. External connection pads 122 are also arranged on the outer periphery of the upper surface 121 of the wiring board 120.

[0064] Wire 160 is connected to the first pad 112 of the package substrate 110 and the external connection pad 122 of the wiring board 120. Wire 160 is made of, for example, gold (Au). For example, the number of wires 160 is the same as the number of first pads 112 and external connection pads 122.

[0065] In plan view, the covering member 170 has a frame-like shape that follows the outer edge of the wiring board 120. The covering member 170 is positioned on the upper surface of the package substrate 110 and the upper surface of the wiring board 120, covering the first pad 112 of the package substrate 110, the wire 160, and the external connection pad 122 of the wiring board 120. In plan view, the covering member 170 has a frame-like shape with an opening in the center, and the wavelength conversion member 150 is exposed through the opening of the covering member 170.

[0066] As shown in Figure 25, the covering member 170 includes a first resin frame 171 that constitutes the outer frame of the covering member 170, a second resin frame 172 that constitutes the inner frame of the covering member 170, and a protective resin portion 173 disposed between the first resin frame 171 and the second resin frame 172. The first resin frame 171 is placed on the package substrate 110. The second resin frame 172 is placed on the wiring board 120. The protective resin portion 173 continuously covers the upper surface of the package substrate 110, the upper surface of the wiring board 120, and the surface of the wire 160. The first resin frame 171 and the second resin frame 172 are, for example, translucent resins. In the protective resin portion 173, for example, a light-reflective substance is contained in the translucent resin that serves as the base material. For example, dimethyl silicone resin can be used as the translucent resin. For example, aluminum oxide can be used as the light-reflective substance.

[0067] As shown in Figures 22, 24, and 25, multiple light-emitting elements 130 are arranged on the central part of the upper surface 121 of the wiring board 120. The multiple light-emitting elements 130 are arranged, for example, in a matrix. In one example, four segments are arranged, each with 64 rows and 64 columns of light-emitting elements 130, for a total of 16,384 light-emitting elements 130. In one example, the size of each light-emitting element 130 is between 40 μm and 50 μm. In one example, the distance between adjacent light-emitting elements 130 is between 4 μm and 8 μm. The light-emitting elements 130 are connected to electrodes exposed on the upper surface 121 of the wiring board 120. The light-emitting elements 130 are, for example, light-emitting diodes, and emit, for example, blue light.

[0068] As shown in Figure 26A, the light-emitting element 130 has an upper surface 131, a lower surface 132 opposite to the upper surface 131, and a side surface 133 positioned between the upper surface 131 and the lower surface 132. The upper surface 131 corresponds to the fourth surface, the lower surface 132 corresponds to the third surface, and the side surface 133 corresponds to the fifth surface. The side surface 133 is inclined to widen from the lower surface 132 toward the upper surface 131. There are four side surfaces 133. The lower surface 132 of the light-emitting element 130 faces the upper surface 121 of the wiring board 120. The light-emitting element 130 is connected to the electrodes of the wiring board 120 via a junction 139. Therefore, the lower surface 132 of the light-emitting element 130 is separated from the upper surface 121 of the wiring board 120. The junction 139 is made of, for example, gold or copper.

[0069] The light-reflective member 140 is positioned between the upper surface 121 of the wiring board 120 and the lower surface 132 of the light-emitting element 130, and between the side surfaces 133 of adjacent light-emitting elements 130. In the light-reflective member 140, the base material 141 contains a light-reflective substance 142. The concentration of the light-reflective substance 142 in the light-reflective member 140 is preferably 50% by mass or more and 70% by mass or less, for example, 60% by mass. The base material 141 is, for example, dimethyl silicone resin. The light-reflective substance 142 is, for example, titanium oxide.

[0070] The wavelength conversion member 150 covers the upper surface 131 of the light-emitting element 130 and the upper surface 143 of the light-reflecting member 140. The wavelength conversion member 150 is in contact with the upper surface 131 of the light-emitting element 130, the upper part of the side surface 133, and the upper surface 143 of the light-reflecting member 140. In the wavelength conversion member 150, a phosphor 152 is contained in the base material 151. The base material 151 is, for example, dimethyl silicone resin. The phosphor 152 includes, for example, YAG (Yttrium Aluminum Garnet), which absorbs blue light from the light-emitting element 130 and emits yellow light.

[0071] As shown in Figure 26B, between adjacent light-emitting elements 130, the upper surface 143 of the light-reflective member 140 is located between the upper surface 131 and the lower surface 132 of the light-emitting element 130 in the Z direction, that is, in the direction from the wiring board 120 toward the wavelength conversion member 150. As a result, the lower part of the side surface 133 of the light-emitting element 130 is covered by the light-reflective member 140, and the upper part is covered by the wavelength conversion member 150.

[0072] Next, a method for manufacturing the light-emitting device according to the second embodiment will be described. Figures 27A and 27B are end views showing the manufacturing method of the light-emitting device according to this embodiment. The manufacturing method of the light-emitting device according to this embodiment comprises: an element preparation step of preparing one or more light-emitting elements 130 arranged on the upper surface of a wiring board 120; a light-reflective member arrangement step of covering the sides of the light-emitting elements 130 with a light-reflective member 140; a substrate arrangement step of arranging the wiring board 120 on the upper surface of a package substrate 110; a wire connection step of electrically connecting the first pad 112 of the package substrate 110 and the external connection pad 122 of the wiring board 120 with a wire 160; a wavelength conversion member arrangement step of arranging a wavelength conversion member 150 on a plurality of light-emitting elements 130; and a covering member arrangement step of arranging a covering member 170 to cover the wire 160.

[0073] (Element preparation process) The element preparation process is the same as in the first embodiment, and will be described with reference to the diagram of the first embodiment. First, as shown in Figure 1, a plurality of light-emitting elements 130 (50 light-emitting elements in the first embodiment) are formed on the support substrate 60. Next, a first structure 10 including the light-emitting elements 130 is fabricated by the process shown in Figures 2 to 8. At this time, in a plan view, the upper surface 131 (fourth surface) of the light-emitting element 130 is larger than the lower surface 132 (third surface), and the release layer 12 encloses the upper surface 131 of the light-emitting element 130. Meanwhile, as shown in Figure 9, a second structure 20 including a second substrate 21 is fabricated.

[0074] Next, as shown in Figures 10 and 11, a portion of the peeling layer 12 is removed by irradiating it with laser light 80, and the light-emitting element 130 is transferred from the first substrate 11 to the second substrate 21. A galvanometer-type laser irradiation device 90 may be used for irradiating with laser light 80. Next, as shown in Figure 12, the light attenuation layer 13 is removed. Next, as shown in Figure 13, the light-emitting element 130 is transferred from the second substrate 21 to the wiring board 120 (wiring board 31 in the first embodiment). In this way, as shown in Figure 14, one or more light-emitting elements 130 can be prepared and arranged on the upper surface of the wiring board 120.

[0075] (Light-reflective component placement process) Next, as shown in Figure 27A, a resist film 181 is placed on the upper surface 121 of the wiring board 120 so as to surround the area where one or more light-emitting elements 130 are arranged. The shape of the resist film 181 is, for example, frame-like in plan view, and the thickness of the resist film 181 is approximately the same as the height of the light-emitting elements 130.

[0076] Next, an uncured light-reflective resin material 182 is placed on a plurality of light-emitting elements 130. The uncured light-reflective resin material 182 includes, for example, a base material made of a translucent resin material and a light-reflective substance contained in the base material.

[0077] Next, the nozzle 200 is moved horizontally while spraying gas 183 from a direction approximately perpendicular to the upper surface of the wiring board 120. By spraying the gas 183 onto the upper surface 121 of the wiring board 120 in this way, the uncured light-reflective resin material 182 is spread out along the horizontal direction. The movement of the nozzle 200 may be repeated, for example, multiple times. This allows the uncured light-reflective resin material 182 to be placed between the wiring board 120 and the light-emitting elements 130, and between the light-emitting elements 130.

[0078] Next, the light-reflective resin material 182 placed on the upper surface of the light-emitting element 130 is removed. The method for removing the light-reflective resin material 182 is, for example, as shown in Figure 27B, by blowing solid carbon dioxide 184 from a nozzle 201 onto the light-reflective resin material 182 placed on the upper surface of the light-emitting element 130. After that, the resist film 181 is removed by wet etching or the like.

[0079] (Board placement process) Next, as shown in Figure 22, the wiring board 120 is placed on the package substrate 110. Preferably, the wiring board 120 is placed on the heat dissipation section 114 located in the center of the package substrate 110. The wiring board 120 can be fixed to the package substrate 110 via a known bonding member such as metal paste. Examples of bonding members include silicone silver paste.

[0080] (Wire connection process) Next, the first pad 112 on the package substrate 110 and the external connection pad 122 on the wiring substrate 120 are electrically connected with a wire 160. In the wire connection process, it is preferable to connect one end of the wire 160 to the external connection pad 122 provided on the wiring substrate 120, and then connect the other end of the wire 160 to the first pad 112 provided on the package substrate 110. By connecting the wire 160 in the above order, it becomes easier to position the top of the wire 160 close to the external connection pad 122. As a result, in the covering member placement process described later, the amount of resin placed below the wire 160 is reduced, and wire breakage due to thermal expansion of the covering member 170 can be suppressed.

[0081] (Wavelength conversion component arrangement process) Next, wavelength conversion members 150 are placed on the multiple light-emitting elements 130. In the wavelength conversion member placement step, for example, a sheet-like wavelength conversion member 150 that has been processed to a predetermined size is prepared in advance, and the wavelength conversion member 150 is placed on the light-emitting elements 130. The wavelength conversion member 150 may be fixed to the light-emitting elements 130 via an adhesive such as resin, or it may be fixed without an adhesive by utilizing the tackiness of the wavelength conversion member 150.

[0082] (Covering material placement process) Next, a covering member 170 that covers the wire 160 is placed. The covering member placement step includes the steps of forming a first resin frame 171, forming a second resin frame 172, and forming a protective resin part 173.

[0083] The step of forming the first resin frame 171 involves placing an uncured first resin material along the area where the multiple light-emitting elements 130 are arranged on the upper surface 121 of the wiring board 120, between the area where the multiple light-emitting elements 130 are arranged and the external connection pad 122. The placement of the first resin material can be done, for example, using a dispenser. The first resin material is, for example, a translucent resin material.

[0084] The step of forming the second resin frame 172 involves placing an uncured second resin material on the upper surface of the package substrate 110, outside the first pad 112. The placement of the second resin material can be done, for example, using a dispenser. The second resin material is, for example, a translucent resin material. It is preferable to use the same resin material for the first and second resin materials. This eliminates the need to change the resin material between the first and second resin frame forming steps, thereby shortening the cycle time in manufacturing.

[0085] Next, an uncured protective resin is placed between the first resin material (first resin frame 171) and the second resin material (second resin frame 172) to cover the wire 160. The protective resin can be placed, for example, using a dispenser. The protective resin is a light-reflective resin material containing, for example, a light-reflective substance such as titanium dioxide. The protective resin can be, for example, a resin with lower viscosity than the first and second resin materials. The protective resin is placed across the wiring board 120 and the package substrate 110, covering the side surface of the wiring board 120.

[0086] Subsequently, the first resin material, the second resin material, and the protective resin are solidified by a heating process to form a covering member 170 including the first resin frame 171, the second resin frame 172, and the protective resin part 173. This forms a covering member 170 that protects the wire 160. In this way, the light-emitting device 101 according to this embodiment is manufactured.

[0087] The effects and advantages of this embodiment will now be explained. In the light-emitting device 101 according to this embodiment, the side surface 133 (fifth surface) of the light-emitting element 130 is inclined with respect to the lower surface 132 (third surface) and is provided to widen in the direction from the lower surface 132 (third surface) to the upper surface 131 (fourth surface). This allows the light-emitting element 130 to emit light. Layer The light generated is efficiently reflected by the side surface 133 and easily directed towards the top surface 131, which is the light-emitting surface. As a result, the light-emitting device 101 has high light extraction efficiency.

[0088] Furthermore, in the process shown in Figure 10, the peeling layer 12 encloses the upper surface 131 of the light-emitting element 130 in a plan view, thus suppressing damage to the light-emitting element 130 by the laser beam 80. In addition, since the lower surface 132 and side surface 133 of the light-emitting element 130 are covered by the light-attenuating layer 13, damage to the light-emitting element 130 by the laser beam 80 can be further suppressed. As a result, the light-emitting device 101 has less damage to the light-emitting element 130 and is highly reliable.

[0089] The embodiments and their variations described above are examples of the present disclosure, and the present disclosure is not limited to these embodiments and variations. For example, the present disclosure also includes the addition, deletion, or modification of certain components or processes in the embodiments and variations described above. Furthermore, the embodiments and variations described above can be implemented in combination with each other.

[0090] The embodiments include the following aspects:

[0091] (Note 1) A step of preparing a first structure comprising: a first substrate having a first surface and a second surface opposite to the first surface; a release layer disposed on the first surface; and one or more light-emitting elements fixed to the first surface side of the first substrate via the release layer, wherein the one or more light-emitting elements have a third surface facing the release layer and a fourth surface opposite to the third surface, the fourth surface being larger than the third surface in plan view, and the release layer enclosing the fourth surface in plan view; A step of preparing a second structure including a second substrate having an upper surface, With the first surface of the first substrate facing the upper surface of the second substrate, the one or more light-emitting elements are positioned between the first substrate and the second substrate, and the peeling layer is irradiated with laser light from the second surface side of the first substrate to remove the peeling layer and transfer the one or more light-emitting elements from the first substrate to the second substrate; A method for manufacturing a light-emitting device equipped with a light-emitting device.

[0092] (Note 2) The one or more light-emitting elements are a plurality of light-emitting elements. The peeling layer has a plurality of layers, each of which is arranged in pairs with each of the light-emitting elements. A method for manufacturing a light-emitting device according to Appendix 1, wherein, in a plan view, each of the layers encloses the fourth surface of each of the light-emitting elements.

[0093] (Note 3) The one or more light-emitting elements are a plurality of light-emitting elements. A method for manufacturing a light-emitting device according to Appendix 1, wherein, in a plan view, the peeling layer encloses all of the fourth surfaces of the plurality of light-emitting elements.

[0094] (Note 4) The first structure further includes a light-attenuating layer disposed between the peeling layer and the light-emitting element, A method for manufacturing a light-emitting device according to any one of the appendices 1 to 3, further comprising the step of removing the light-attenuating layer after the transfer step.

[0095] (Note 5) The light-emitting element further has a fifth surface connecting the third surface and the fourth surface, The method for manufacturing a light-emitting device as described in Appendix 4, wherein the light-attenuating layer covers the fifth surface.

[0096] (Note 6) The method for manufacturing a light-emitting device according to Appendix 4 or 5, further comprising an adhesive layer disposed between the release layer and the light-attenuating layer as the first structure.

[0097] (Note 7) The step of preparing the first structure is: A step of preparing a third structure comprising a support substrate, one or more semiconductor laminates disposed on the support substrate, electrode portions disposed on the surface opposite to the surface of the one or more semiconductor laminates facing the support substrate, and a light attenuation layer on the support substrate, disposed around each of the semiconductor laminates and each of the electrode portions, and holding each of the semiconductor laminates and each of the electrode portions, wherein the electrode surface of the electrode portion is exposed from the light attenuation layer. A step of preparing a fourth structure including the first substrate and the release layer, With the electrode surface of the electrode portion in the third structure and the release layer in the fourth structure facing each other, the step of bonding the electrode surface of the electrode portion to the release layer, After the bonding step, the step of removing the support substrate, A method for manufacturing a light-emitting device as described in any one of the appendices 4 to 6.

[0098] (Note 8) The one or more light-emitting elements are a plurality of light-emitting elements. A method for manufacturing a light-emitting device according to any one of the appendices 1 to 7, wherein in the transfer step, the laser light is irradiated onto the portion of the peeled layer corresponding to each of the plurality of light-emitting elements while controlling the direction of laser light emission in a galvanometer manner.

[0099] (Note 9) The method for manufacturing a light-emitting device according to Appendix 8, wherein the laser light is irradiated obliquely to the third surface of the light-emitting element.

[0100] (Note 10) The method for manufacturing a light-emitting device according to Appendix 8 or 9, wherein the intensity distribution of the laser light is top-hat shaped.

[0101] (Note 11) The second structure further includes an adhesive layer disposed on the upper surface side of the second substrate, A method for manufacturing a light-emitting device according to any one of the appendices 1 to 10, wherein in the transfer step, the one or more light-emitting elements are bonded to the second substrate via the adhesive layer. [Industrial applicability]

[0102] This disclosure can be used, for example, in automotive headlights, backlight devices for liquid crystal displays, various lighting fixtures, large displays, various display devices such as advertisements and destination guidance devices, or projector devices. [Explanation of Symbols]

[0103] 1. Light-emitting device 10 First structure 11. First circuit board 11a 1st page 11b Side 2 12. Exfoliation layer 12a Layers: Multiple divided layers 12a, and a layer 12a arranged in pairs with the light-emitting element 50. 12b Part 12b corresponding to one light-emitting element 50 in the peeling layer 12 13. Light attenuation layer 15 Structure 20 Second structure 21 Second board 21a Top side 22 Adhesive layer 30 Third structure 31 Wiring board 40 4th structure 50 light-emitting elements 50a Page 3 50b 4th page 50c page 5 50N defective light-emitting element 51 Semiconductor Stack 52 Electrode section 52a, 52b electrode surface 60 Support substrate 60a top 70 Adhesive layer 80 Laser light 85 Adhesive Sheets 86 Pressing part 90 Laser irradiation device 91, 92 Galvano Mirror 91c, 92c rotation axis 93 Lens 101 Light-emitting device 110 Package Substrates 110a top side 110b Bottom side 111 Insulating substrate 112 First Pad 113 Second pad 114 Heat radiation part 120 Wiring board 121 Top surface 122 External connection pad 130 light-emitting elements 131 Top surface 132 Bottom surface 133 Side view 139 Joint 140 Light-reflective material 141 Base material 142 Light reflective substances 143 Top surface 150 Wavelength conversion component 151 Base material 152 Phosphors 160 wire 170 Covering member 171 First resin frame 172 Second resin frame 173 Protective resin part 181 Resist film 182 Light reflective resin material 183 Gases 184 Solid carbon dioxide 200, 201 nozzles

Claims

1. The first step of preparing a first structure comprising: a first substrate having a first surface and a second surface opposite to the first surface; a release layer disposed on the first surface; and a plurality of light-emitting elements fixed to the first surface side of the first substrate via the release layer, wherein the plurality of light-emitting elements have a third surface facing the release layer and a fourth surface opposite to the third surface, the fourth surface being larger than the third surface in plan view, and the release layer having a plurality of layers, each paired with each of the light-emitting elements, and in plan view, each of the layers encompassing the fourth surface of each of the light-emitting elements; A step of preparing a second structure including a second substrate having an upper surface, With the first surface of the first substrate facing the upper surface of the second substrate, the plurality of light-emitting elements are positioned between the first substrate and the second substrate, and a laser beam is shone onto the release layer from the second surface side of the first substrate to remove the release layer and transfer the plurality of light-emitting elements from the first substrate to the second substrate. A method for manufacturing a light-emitting device equipped with the necessary components.

2. The first structure further includes a light-attenuating layer disposed between the peeling layer and the light-emitting element, The method for manufacturing a light-emitting device according to claim 1, further comprising the step of removing the light-attenuating layer after the transfer step.

3. The light-emitting element further has a fifth surface connecting the third surface and the fourth surface, The method for manufacturing a light-emitting device according to claim 2, wherein the light attenuation layer covers the fifth surface.

4. The method for manufacturing a light-emitting device according to claim 2, further comprising an adhesive layer disposed between the release layer and the light-attenuation layer as the first structure.

5. The step of preparing the first structure is: A step of preparing a third structure comprising a support substrate, one or more semiconductor laminates disposed on the support substrate, electrode portions disposed on the surface opposite to the surface of the one or more semiconductor laminates facing the support substrate, and a light attenuation layer on the support substrate, disposed around each of the semiconductor laminates and each of the electrode portions, and holding each of the semiconductor laminates and each of the electrode portions, wherein the electrode surface of the electrode portion is exposed from the light attenuation layer. A step of preparing a fourth structure including the first substrate and the release layer, With the electrode surface of the electrode portion in the third structure and the release layer in the fourth structure facing each other, the step of bonding the electrode surface of the electrode portion to the release layer, After the bonding step, the step of removing the support substrate, A method for manufacturing a light-emitting device according to claim 2, having the following characteristics:

6. The method for manufacturing a light-emitting device according to claim 1, wherein in the transfer step, the laser light is irradiated onto the portion of the peeled layer corresponding to each of the plurality of light-emitting elements while controlling the direction of laser light emission in a galvanometer manner.

7. The method for manufacturing a light-emitting device according to claim 6, wherein the laser light is irradiated obliquely to the third surface of the light-emitting device.

8. The method for manufacturing a light-emitting device according to claim 6, wherein the intensity distribution of the laser light is top-hat shaped.

9. The second structure further includes an adhesive layer disposed on the upper surface side of the second substrate, The method for manufacturing a light-emitting device according to claim 1, wherein in the transfer step, the plurality of light-emitting elements are bonded to the second substrate via the adhesive layer.

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