Semiconductor equipment

Abstract

A semiconductor device comprising: a first die pad; a second die pad; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; an insulating element electrically connected to the first semiconductor element and to the second semiconductor element, and insulating the first semiconductor element and the second semiconductor element from each other; an encapsulating resin covering the first semiconductor element, the second semiconductor element, and the insulating element; and a support member of which at least a part is an insulating portion including resin and on which the insulating element is mounted. The first die pad and the second die pad are spaced apart from each other in a first direction orthogonal to a thickness direction of the first semiconductor element. The support member is supported on at least one of the first die pad, the second die pad, and the encapsulating resin.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device on which a plurality of semiconductor elements and insulating elements for insulating the plurality of semiconductor elements from each other are mounted.

Background Art

[0002] Conventionally, an inverter device has been used in electric vehicles (including hybrid vehicles) or household appliances. The inverter device includes, for example, a semiconductor device and switching elements such as an IGBT (Insulated Gate Bipolar Transistor) and a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The semiconductor device includes a control element (controller) and a drive element (gate driver). In the inverter device, a control signal output from the outside is input to the control element. The control element converts the control signal into a PWM (Pulse Width Modulation) control signal and then transmits it to the drive element. The drive element drives, for example, six switching elements at a desired timing based on the PWM control signal. Thereby, three-phase AC power for motor drive is generated from DC power. Patent Document 1 discloses an example of a semiconductor device used in a motor drive device.

[0003] In the semiconductor device disclosed in Patent Document 1, since the power supply voltage supplied to the control element and the power supply voltage supplied to the drive element are different, a difference occurs in the power supply voltages applied to each of the two conductive paths, namely, the conductive path to the control element and the conductive path to the drive element. Therefore, by interposing an insulating element between the conductive path to the control element and the conductive path to the drive element, the breakdown voltage of the semiconductor device is improved. The insulating element is mounted on a die pad on which either the control element or the drive element is mounted. When the difference in the power supply voltages applied to each of the two conductive paths is significantly different, the risk of dielectric breakdown of the insulating element increases, and thus it is required to take countermeasures.

Prior Art Documents

[0004] [Patent Document 1] Japanese Patent Publication No. 2016-207714 [Overview of the Initiative] [Problems that the invention aims to solve]

[0005] In view of the circumstances described above, one of the objectives of this disclosure is to provide a semiconductor device that can improve the dielectric strength between multiple semiconductor elements and insulating elements. [Means for solving the problem]

[0006] The semiconductor device provided by this disclosure comprises a plurality of conductive members including a first die pad and a second die pad; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; an insulating element electrically connected to the first semiconductor element and the second semiconductor element and insulating the first semiconductor element and the second semiconductor element from each other; a sealing resin covering the first semiconductor element, the second semiconductor element and the insulating element and at least a portion of each of the plurality of conductive members; and a support member on which the insulating element is mounted, the insulating portion of which at least a portion includes resin. The first die pad and the second die pad are located apart from each other in a first direction perpendicular to the thickness direction of the first semiconductor element. The support member is supported by at least one of the first die pad, the second die pad and the sealing resin. [Effects of the Invention]

[0007] According to the above configuration in this disclosure, it is possible to improve the dielectric breakdown voltage between multiple semiconductor elements and insulating elements in a semiconductor device.

[0008] Other features and advantages of this disclosure will become more apparent from the detailed description below, based on the accompanying drawings. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] Figure 2 is a plan view corresponding to Figure 1, and shows the encapsulating resin permeating through it. [Figure 3] Figure 3 is a front view of the semiconductor device shown in Figure 1. [Figure 4] Figure 4 is a rear view of the semiconductor device shown in Figure 1. [Figure 5] Figure 5 is a left side view of the semiconductor device shown in Figure 1. [Figure 6] Figure 6 is a cross-sectional view along the line VI-VI in Figure 2. [Figure 7] Figure 7 is a cross-sectional view along the line VII-VII in Figure 2. [Figure 8] Figure 8 is a magnified view of a portion of Figure 6. [Figure 9] Figure 9 is a schematic diagram of the insulating element and support member shown in Figure 6. [Figure 10] Figure 10 is a plan view illustrating the formation steps of the support member for the semiconductor device shown in Figure 1. [Figure 11] Figure 11 is a plan view illustrating the formation steps of the support member for the semiconductor device shown in Figure 1. [Figure 12] Figure 12 is a partially enlarged cross-sectional view illustrating the formation steps of the support member for the semiconductor device shown in Figure 1. [Figure 13] Figure 13 is a partially enlarged cross-sectional view illustrating the formation steps of the support member of the semiconductor device shown in Figure 1. [Figure 14] Figure 14 is a partially enlarged cross-sectional view illustrating the formation steps of the support member of the semiconductor device shown in Figure 1. [Figure 15] Figure 15 is a plan view illustrating the formation steps of the support member for the semiconductor device shown in Figure 1. [Figure 16]FIG. 16 is a partially enlarged cross-sectional view of a semiconductor device according to a modified example of the first embodiment of the present disclosure. [Figure 17] FIG. 17 is a plan view of a semiconductor device according to the second embodiment of the present disclosure, showing through the encapsulating resin. [Figure 18] FIG. 18 is a cross-sectional view taken along line XVIII-XVIII of FIG. 17. [Figure 19] FIG. 19 is a partially enlarged view of FIG. 18. [Figure 20] FIG. 20 is a plan view of a semiconductor device according to the third embodiment of the present disclosure, showing through the encapsulating resin. [Figure 21] FIG. 21 is a cross-sectional view taken along line XXI-XXI of FIG. 20. [Figure 22] FIG. 22 is a partially enlarged view of FIG. 21. [Figure 23] FIG. 23 is a plan view of a semiconductor device according to the fourth embodiment of the present disclosure, showing through the encapsulating resin. [Figure 24] FIG. 24 is a cross-sectional view taken along line XXIV-XXIV of FIG. 23. [Figure 25] FIG. 25 is a plan view for explaining the formation stage of the support member of the semiconductor device shown in FIG. 23. [Figure 26] FIG. 26 is a plan view for explaining the formation stage of the support member of the semiconductor device shown in FIG. 23. [Figure 27] FIG. 27 is a plan view of a semiconductor device according to the fifth embodiment of the present disclosure, showing through the encapsulating resin. [Figure 28] FIG. 28 is a front view of the semiconductor device shown in FIG. 27. [Figure 29] FIG. 29 is a rear view of the semiconductor device shown in FIG. 27. [Figure 30] FIG. 30 is a cross-sectional view taken along line XXX-XXX of FIG. 27. [Figure 31] FIG. 31 is a cross-sectional view taken along line XXXI-XXXI of FIG. 27. [Figure 32] FIG. 32 is a plan view for explaining the formation stage of the support member of the semiconductor device shown in FIG. 27. [Figure 33]Figure 33 is a plan view illustrating the formation stages of the support member for the semiconductor device shown in Figure 27. [Figure 34] Figure 34 is a plan view of a semiconductor device according to the sixth embodiment of the present disclosure, and shows a sealant resin. [Figure 35] Figure 35 is a cross-sectional view along the line XXXV-XXXV in Figure 34. [Figure 36] Figure 36 is a cross-sectional view along the line XXXVI-XXXVI in Figure 34. [Figure 37] Figure 37 is a plan view illustrating the formation steps of the support member for the semiconductor device shown in Figure 34. [Figure 38] Figure 38 is a plan view illustrating the formation steps of the support member for the semiconductor device shown in Figure 34. [Figure 39] Figure 39 is a plan view of a semiconductor device according to the seventh embodiment of the present disclosure, and shows a sealant resin. [Figure 40] Figure 40 is a magnified view of a portion of Figure 39. [Figure 41] Figure 41 is a cross-sectional view along the XLI-XLI line in Figure 39. [Figure 42] Figure 42 is a schematic diagram of the insulating element and support member shown in Figure 41. [Modes for carrying out the invention]

[0010] The forms for implementing this disclosure will be described based on the attached drawings.

[0011] A semiconductor device A1 according to a first embodiment of this disclosure will be described based on Figures 1 to 9. The semiconductor device A1 comprises a first semiconductor element 11, a second semiconductor element 12, an insulating element 13, a plurality of conductive members 20, a support member 23, a bonding layer 29, a plurality of first wires 41, a plurality of second wires 42, a plurality of third wires 43, a plurality of fourth wires 44, and a sealing resin 50. The plurality of conductive members 20 include a first die pad 21, a second die pad 22, a plurality of first terminals 31, and a plurality of second terminals 32. The semiconductor device A1 is surface-mounted on a wiring board of an inverter device such as an electric vehicle (or hybrid vehicle). The package format of the semiconductor device A1 is SOP (Small Outline Package). However, the package format of the semiconductor device A1 is not limited to SOP. Here, for ease of understanding, Figure 2 shows the sealing resin 50 transparently, and the sealing resin 50 is indicated by dashed lines.

[0012] In the description of semiconductor device A1, the thickness direction of each of the first semiconductor element 11, the second semiconductor element 12, and the insulating element 13 is referred to as the "thickness direction z". One direction perpendicular to the thickness direction z is referred to as the "first direction x". The direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y".

[0013] The first semiconductor element 11, the second semiconductor element 12, and the insulating element 13 are the core elements of the semiconductor device A1. In the semiconductor device A1, the first semiconductor element 11, the second semiconductor element 12, and the insulating element 13 are composed of individual elements. In the first direction x, the second semiconductor element 12 is located on the opposite side of the insulating element 13 from the first semiconductor element 11. Viewed in the thickness direction z, the first semiconductor element 11, the second semiconductor element 12, and the insulating element 13 are rectangular in shape with the second direction y as the longer side.

[0014] The first semiconductor element 11 is a gate driver controller (control element) that drives switching elements such as IGBTs and MOSFETs. The first semiconductor element 11 has a circuit that converts a control signal input from an ECU or the like into a PWM control signal, a transmitting circuit for transmitting the PWM control signal to the second semiconductor element 12, and a receiving circuit that receives an electrical signal from the second semiconductor element 12.

[0015] The second semiconductor element 12 is a gate driver (driving element) for driving the switching element. The second semiconductor element 12 has a receiving circuit for receiving a PWM control signal, a circuit for driving the switching element based on the PWM control signal, and a transmitting circuit for transmitting an electrical signal to the first semiconductor element 11. The electrical signal may be, for example, an output signal from a temperature sensor located near the motor.

[0016] The insulating element 13 is an element for transmitting PWM control signals and other electrical signals in an isolated state. In semiconductor device A1, the insulating element 13 is of the inductive type. An example of an inductive type insulating element 13 is an isolated transformer. An isolated transformer transmits electrical signals in an isolated state by inductively coupling two inductors (coils). The insulating element 13 has a substrate made of silicon. An inductor made of copper (Cu) is formed on the substrate. The inductor includes a transmitting inductor and a receiving inductor, and these inductors are stacked in the thickness direction z. A dielectric layer made of silicon dioxide (SiO2) or the like is interposed between the transmitting inductor and the receiving inductor. The transmitting inductor and the receiving inductor are electrically insulated by this dielectric layer. In addition, the insulating element 13 may be of the capacitive type. An example of a capacitive type insulating element 13 is a capacitor.

[0017] In semiconductor device A1, the voltage applied to the first semiconductor element 11 and the voltage applied to the second semiconductor element 12 are relatively different. As a result, a potential difference is generated between the first semiconductor element 11 and the second semiconductor element 12. Furthermore, in semiconductor device A1, the power supply voltage supplied to the second semiconductor element 12 is higher than the power supply voltage supplied to the first semiconductor element 11.

[0018] In semiconductor device A1, a first circuit including a first semiconductor element 11 and a second circuit including a second semiconductor element 12 are insulated from each other by an insulating element 13. The insulating element 13 is electrically connected to both the first and second circuits. The components of the first circuit include, in addition to the first semiconductor element 11, a first die pad 21, a plurality of first terminals 31, a plurality of first wires 41, and a plurality of third wires 43. The components of the second circuit include, in addition to the second semiconductor element 12, a second die pad 22, a plurality of second terminals 32, a plurality of second wires 42, and a plurality of fourth wires 44. The first and second circuits have relatively different potentials. In semiconductor device A1, the potential of the second circuit is higher than the potential of the first circuit. Furthermore, the insulating element 13 relays the mutual signals between the first and second circuits. For example, in inverter devices for electric vehicles and hybrid vehicles, the voltage applied to the ground of the first semiconductor element 11 is approximately 0V, while the voltage applied to the ground of the second semiconductor element 12 can transiently exceed 600V.

[0019] As shown in Figures 2 and 6, the first semiconductor element 11 has a plurality of first electrodes 111. The plurality of first electrodes 111 are provided on the upper surface of the first semiconductor element 11 (the surface facing the same direction as the first mounting surface 211A of the first pad portion 211 of the first die pad 21, which will be described later). The composition of the plurality of first electrodes 111 includes, for example, aluminum (Al). That is, each first electrode 111 contains aluminum. The plurality of first electrodes 111 are electrically connected to the circuit configured in the first semiconductor element 11.

[0020] As shown in Figures 2 and 6, the insulating element 13 is located between the first semiconductor element 11 and the second semiconductor element 12 in the first direction x. As shown in Figures 2 and 8, the insulating element 13 has a plurality of first relay electrodes 131 and a plurality of second relay electrodes 132. The plurality of first relay electrodes 131 and the plurality of second relay electrodes 132 are provided on the upper surface of the insulating element 13 (the surface facing the same direction as the mounting surface 23A of the support member 23, which will be described later). The plurality of first relay electrodes 131 are arranged along the second direction y and are located closer to the first semiconductor element 11 than to the second semiconductor element 12 in the first direction x. The plurality of second relay electrodes 132 are arranged along the second direction y and are located closer to the second semiconductor element 12 than to the first semiconductor element 11 in the first direction x.

[0021] As shown in Figure 9, the insulating element 13 further comprises a first transmitting / receiving unit 133, a second transmitting / receiving unit 134, and a relay unit 135. The first transmitting / receiving unit 133, the second transmitting / receiving unit 134, and the relay unit 135 are inductors. The first transmitting / receiving unit 133 and the second transmitting / receiving unit 134 are located apart from each other in a first direction x. The first transmitting / receiving unit 133 is conductive to a plurality of first relay electrodes 131. Furthermore, the first transmitting / receiving unit 133 is conductive to a first semiconductor element 11 via a plurality of third wires 43. The second transmitting / receiving unit 134 is conductive to a plurality of second relay electrodes 132. Furthermore, the second transmitting / receiving unit 134 is conductive to a second semiconductor element 12 via a plurality of fourth wires 44.

[0022] As shown in Figure 9, the relay unit 135 is located away from the first transmitting / receiving unit 133 and the second transmitting / receiving unit 134 in the thickness direction z. A dielectric layer (not shown) made of silicon dioxide or the like is interposed between the relay unit 135 and the first transmitting / receiving unit 133 and the second transmitting / receiving unit 134. The relay unit 135 transmits and receives signals between the first transmitting / receiving unit 133 and the second transmitting / receiving unit 134. In the thickness direction z, the relay unit 135 is located closer to the support member 23 than the first transmitting / receiving unit 133 and the second transmitting / receiving unit 134. The potential of the relay unit 135 is between the potential of the first transmitting / receiving unit 133 and the potential of the second transmitting / receiving unit 134.

[0023] As shown in Figures 2 and 6, the second semiconductor element 12 has a plurality of second electrodes 121. The plurality of second electrodes 121 are provided on the upper surface of the second semiconductor element 12 (the surface facing the same direction as the second mounting surface 221A of the second pad portion 221 of the second die pad 22, which will be described later). The composition of the plurality of second electrodes 121 includes, for example, aluminum. The plurality of second electrodes 121 are electrically connected to the circuit configured in the second semiconductor element 12.

[0024] The multiple conductive members 20 constitute a conductive path between the first semiconductor element 11, the second semiconductor element 12, and the insulating element 13, and the wiring board on which the semiconductor device A1 is mounted. The multiple conductive members 20 are obtained from a lead frame 80, which will be described later. The lead frame 80 contains copper in its composition. As described above, the multiple conductive members 20 include a first die pad 21, a second die pad 22, a plurality of first terminals 31, and a plurality of second terminals 32.

[0025] The first die pad 21 and the second die pad 22 are positioned apart from each other in the first direction x, as shown in Figures 1 and 2. The first die pad 21 is mounted on the first semiconductor element 11. The second die pad 22 is mounted on the second semiconductor element 12. The voltage applied to the second die pad 22 is higher than the voltage applied to the first die pad 21.

[0026] As shown in Figure 2, the first die pad 21 has a first pad portion 211 and two first suspension lead portions 212. The first semiconductor element 11 is mounted on the first pad portion 211. As shown in Figures 6 and 7, the first pad portion 211 has a first mounting surface 211A oriented in the thickness direction z. The first semiconductor element 11 is bonded to the first mounting surface 211A via a conductive bonding material (solder, metal paste, etc.) not shown. The first pad portion 211 is covered with a sealing resin 50. The thickness of the first pad portion 211 is, for example, 150 μm or more and 200 μm or less.

[0027] As shown in Figure 2, the two first suspension lead portions 212 are connected to both sides of the first pad portion 211 in the second direction y. The two first suspension lead portions 212 have a covered portion 212A and an exposed portion 212B. The covered portion 212A is connected to the first pad portion 211 and is covered by the sealing resin 50. The covered portion 212A includes a section extending in the first direction x. The exposed portion 212B is connected to the covered portion 212A and is exposed from the sealing resin 50. Viewed in the thickness direction z, the exposed portion 212B extends along the first direction x. Viewed in the second direction y, the exposed portion 212B is bent in a gull-wing shape (see Figures 3 and 4). The surface of the exposed portion 212B may be plated, for example, with tin (Sn).

[0028] As shown in Figure 2, the second die pad 22 has a second pad portion 221 and two second suspension lead portions 222. The second semiconductor element 12 is mounted on the second pad portion 221. As shown in Figure 6, the second pad portion 221 has a second mounting surface 221A oriented in the thickness direction z. The second semiconductor element 12 is bonded to the second mounting surface 221A via a conductive bonding material (solder or metal paste, etc.) not shown. The second pad portion 221 is covered with a sealing resin 50. The thickness of the second pad portion 221 is, for example, 150 μm or more and 200 μm or less.

[0029] As shown in Figure 2, the two second suspension lead portions 222 extend from both sides of the second pad portion 221 in the second direction y. The two second suspension lead portions 222 have a covered portion 222A and an exposed portion 222B. The covered portion 222A is connected to the second pad portion 221 and is covered by the sealing resin 50. The covered portion 222A includes a section extending in the first direction x. The exposed portion 222B is connected to the covered portion 222A and is exposed from the sealing resin 50. Viewed in the thickness direction z, the exposed portion 222B extends along the first direction x. Viewed in the second direction y, the exposed portion 222B is bent in a gull-wing shape (see Figures 2 and 4). The surface of the exposed portion 222B may be tin-plated, for example.

[0030] As shown in Figures 6 and 7, an insulating element 13 is mounted on the support member 23. As shown in Figures 2 and 6, in the semiconductor device A1, the support member 23 is located between the first die pad 21 and the second die pad 22 in the first direction x. Furthermore, in the semiconductor device A1, the support member 23 is located away from both sides of the sealing resin 50 in the second direction y. The support member 23 is covered by the sealing resin 50.

[0031] As shown in Figure 8, in semiconductor device A1, both sides of the support member 23 in the first direction x are in contact with the first pad portion 211 of the first die pad 21 and the second pad portion 221 of the second die pad 22. As a result, the support member 23 fills the gap between the first pad portion 211 and the second pad portion 221. Furthermore, both sides of the support member 23 in the thickness direction z are in contact with the sealing resin 50. Therefore, in semiconductor device A1, the support member 23 is supported by the first die pad 21, the second die pad 22 and the sealing resin 50.

[0032] As shown in Figures 6 and 7, the support member 23 has a mounting surface 23A facing the thickness direction z. The insulating element 13 is mounted on the mounting surface 23A. As shown in Figure 8, the thickness t of the support member 23 is thinner than the thickness T of the first pad portion 211 of the first die pad 21 and the second pad portion 221 of the second die pad 22. The mounting surface 23A is connected to the first mounting surface 211A of the first pad portion 211 and the second mounting surface 221A of the second pad portion 221.

[0033] As shown in Figures 6 and 7, at least a portion of the support member 23 is an insulating portion 231. The insulating portion 231 is made of a material containing resin. This resin is, for example, epoxy resin. In semiconductor device A1, the entire support member 23 is an insulating portion 231.

[0034] As shown in Figures 6 and 7, the bonding layer 29 is interposed between the mounting surface 23A of the support member 23 and the insulating element 13. The insulating element 13 is bonded to the mounting surface 23A via the bonding layer 29. The bonding layer 29 has electrical insulating properties. The bonding layer 29 is made of a material including, for example, epoxy resin.

[0035] The multiple first terminals 31 are located on one side of the first direction x, as shown in Figures 1 and 2. More specifically, the multiple first terminals 31 are located in the first direction x on the opposite side of the second pad portion 221 of the second die pad 22 to the first pad portion 211 of the first die pad 21. The multiple first terminals 31 are arranged along the second direction y. At least one of the multiple first terminals 31 is conductive to the first semiconductor element 11 via the third wire 43. The multiple first terminals 31 include a multiple first intermediate terminal 31A and two first side terminals 31B. The two first side terminals 31B are located on either side of the multiple first intermediate terminals 31A in the second direction y. In the second direction y, one of the two first suspension lead portions 212 of the first die pad 21 is located between one of the two first side terminals 31B and the first intermediate terminal 31A that is closest to that first side terminal 31B.

[0036] As shown in Figures 2 and 6, the multiple first terminals 31 have a covered portion 311 and an exposed portion 312. The covered portion 311 is covered with a sealing resin 50. The dimension in the first direction x of each covered portion 311 of the two first side terminals 31B is larger than the dimension in the first direction x of each covered portion 311 of the multiple first intermediate terminals 31A.

[0037] As shown in Figures 2 and 6, the exposed portion 312 is connected to the covered portion 311 and is exposed from the sealing resin 50. Viewed in the thickness direction z, the exposed portion 312 extends along the first direction x. Viewed in the second direction y, the exposed portion 312 is bent in a gull-wing shape. The shape of the exposed portion 312 is equal to the shape of each exposed portion 212B of the two first suspension lead portions 212 of the first die pad 21. The surface of the exposed portion 312 may be tin-plated, for example.

[0038] The multiple second terminals 32 are located on the other side of the first direction x, as shown in Figures 1 and 2. More specifically, the multiple second terminals 32 are located on the opposite side of the multiple first terminals 31 to the first pad portion 211 of the first die pad 21 in the first direction x. The multiple second terminals 32 are arranged along the second direction y. At least one of the multiple second terminals 32 is conductive to the second semiconductor element 12 via the fourth wire 44. The multiple second terminals 32 include a multiple second intermediate terminal 32A and two second side terminals 32B. The two second side terminals 32B are located on either side of the multiple second intermediate terminals 32A in the second direction y. In the second direction y, one of the two second suspension lead portions 222 of the second die pad 22 is located between one of the two second side terminals 32B and the second intermediate terminal 32A that is closest to that second side terminal 32B.

[0039] As shown in Figures 2 and 6, the multiple second terminals 32 have a covered portion 321 and an exposed portion 322. The covered portion 321 is covered with a sealing resin 50. The dimension in the first direction x of each covered portion 321 of the two second side terminals 32B is larger than the dimension in the first direction x of each covered portion 321 of the multiple second intermediate terminals 32A.

[0040] As shown in Figures 2 and 6, the exposed portion 322 is connected to the covered portion 321 and is exposed from the sealing resin 50. Viewed in the thickness direction z, the exposed portion 322 extends along the first direction x. As shown in Figure 3, viewed in the second direction y, the exposed portion 322 is bent in a gull-wing shape. The shape of the exposed portion 322 is equal to the shape of the exposed portion 222B of each of the two second suspension lead portions 222 of the second die pad 22. The surface of the exposed portion 322 may be tin-plated, for example.

[0041] Multiple first wires 41, multiple second wires 42, multiple third wires 43, and multiple fourth wires 44, together with multiple conductive members 20, constitute a conductive path for the first semiconductor element 11, the second semiconductor element 12, and the insulating element 13 to perform predetermined functions.

[0042] As shown in Figures 2 and 6, the multiple first wires 41 are joined to the multiple first electrodes 111 of the first semiconductor element 11 and to the covering portions 311 of the multiple first terminals 31. As a result, at least one of the multiple first terminals 31 is electrically connected to the first semiconductor element 11. Furthermore, at least one of the multiple first wires 41 is joined to one of the multiple first electrodes 111 and to one of the covering portions 212A of the two first suspension lead portions 212 of the first die pad 21. As a result, the first semiconductor element 11 is electrically connected to at least one of the two first suspension lead portions 212. As a result, at least one of the two first suspension lead portions 212 forms the ground terminal of the first semiconductor element 11. The composition of the multiple first wires 41 includes gold (Au). In addition, the composition of the multiple first wires 41 may include copper.

[0043] As shown in Figures 2 and 6, the multiple second wires 42 are joined to the multiple second electrodes 121 of the second semiconductor element 12 and to the covering portions 321 of the multiple second terminals 32. As a result, at least one of the multiple second terminals 32 is electrically connected to the second semiconductor element 12. Furthermore, at least one of the multiple second wires 42 is joined to one of the multiple second electrodes 121 and to one of the covering portions 222A of the two second suspension lead portions 222 of the second die pad 22. As a result, the second semiconductor element 12 is electrically connected to at least one of the two second suspension lead portions 222. As a result, at least one of the two second suspension lead portions 222 forms the ground terminal of the second semiconductor element 12. The composition of the multiple second wires 42 includes gold. In addition, the composition of the multiple second wires 42 may include copper.

[0044] As shown in Figures 2 and 6, the multiple third wires 43 are joined to the multiple first relay electrodes 131 of the insulating element 13 and to the multiple first electrodes 111 of the first semiconductor element 11. This allows the first semiconductor element 11 and the insulating element 13 to be electrically connected to each other. The multiple third wires 43 are arranged along the second direction y. The multiple third wires 43 straddle the boundary between the first pad portion 211 of the first die pad 21 and the support member 23. The composition of the multiple third wires 43 includes gold.

[0045] As shown in Figures 2 and 6, the multiple fourth wires 44 are joined to the multiple second relay electrodes 132 of the insulating element 13 and to the multiple second electrodes 121 of the second semiconductor element 12. This allows the second semiconductor element 12 and the insulating element 13 to conduct electricity with each other. The multiple fourth wires 44 are arranged along the second direction y. The multiple fourth wires 44 straddle the boundary between the support member 23 and the second pad portion 221 of the second die pad 22. The composition of the multiple fourth wires 44 includes gold.

[0046] As shown in Figure 1, the encapsulating resin 50 covers the first semiconductor element 11, the second semiconductor element 12, and the insulating element 13, as well as at least a portion of each of the multiple conductive members 20. Furthermore, the encapsulating resin 50 covers the multiple first wires 41, multiple second wires 42, multiple third wires 43, and multiple fourth wires 44. The encapsulating resin 50 has electrical insulating properties. The encapsulating resin 50 is made of a material including, for example, epoxy resin. Viewed in the thickness direction z, the encapsulating resin 50 is rectangular in shape.

[0047] As shown in Figures 3 to 5, the sealing resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, and a pair of second side surfaces 54.

[0048] As shown in Figures 3 to 5, the top surface 51 and the bottom surface 52 are located apart from each other in the thickness direction z. The top surface 51 and the bottom surface 52 face opposite each other in the thickness direction z. The top surface 51 and the bottom surface 52 are flat (or nearly flat).

[0049] As shown in Figures 3 to 5, the pair of first sides 53 are connected to the top surface 51 and the bottom surface 52, and are located apart from each other in the first direction x. From the first side 53 located on one side of the pair of first sides 53 in the first direction x, the exposed portions 212B of the two first suspension lead portions 212 of the first die pad 21 and the exposed portions 312 of the multiple first terminals 31 are exposed. From the first side 53 located on the other side of the pair of first sides 53 in the first direction x, the exposed portions 212B of the two second suspension lead portions 222 of the second die pad 22 and the exposed portions 322 of the multiple second terminals 32 are exposed.

[0050] As shown in Figures 3 to 5, the pair of first sides 53 include a first upper section 531, a first lower section 532, and a first intermediate section 533. The first upper section 531 has one side in the thickness direction z connected to the top surface 51 and the other side in the thickness direction z connected to the first intermediate section 533. The first upper section 531 is inclined with respect to the top surface 51. The first lower section 532 has one side in the thickness direction z connected to the bottom surface 52 and the other side in the thickness direction z connected to the first intermediate section 533. The first lower section 532 is inclined with respect to the bottom surface 52. The first intermediate section 533 has one side in the thickness direction z connected to the first upper section 531 and the other side in the thickness direction z connected to the first lower section 532. The in-plane directions of the first intermediate section 533 are the thickness direction z and the second direction y. Viewed in the thickness direction z, the first intermediate section 533 is located outward from the top surface 51 and the bottom surface 52. From the first intermediate portion 533 of the pair of first sides 53, the exposed portions 212B of the two first suspension lead portions 212 of the first die pad 21, the exposed portions 212B of the two second suspension lead portions 222 of the second die pad 22, the exposed portions 312 of the multiple first terminals 31, and the exposed portions 322 of the multiple second terminals 32 are exposed.

[0051] As shown in Figures 3 to 5, the pair of second sides 54 are connected to the top surface 51 and the bottom surface 52, and are located apart from each other in the second direction y. As shown in Figure 1, the first die pad 21, the second die pad 22, the multiple first terminals 31, and the multiple second terminals 32 are located apart from the pair of second sides 54.

[0052] As shown in Figures 3 to 5, the pair of second sides 54 include a second upper section 541, a second lower section 542, and a second intermediate section 543. The second upper section 541 has one side in the thickness direction z connected to the top surface 51 and the other side in the thickness direction z connected to the second intermediate section 543. The second upper section 541 is inclined with respect to the top surface 51. The second lower section 542 has one side in the thickness direction z connected to the bottom surface 52 and the other side in the thickness direction z connected to the second intermediate section 543. The second lower section 542 is inclined with respect to the bottom surface 52. The second intermediate section 543 has one side in the thickness direction z connected to the second upper section 541 and the other side in the thickness direction z connected to the second lower section 542. The in-plane direction of the second intermediate section 543 is the thickness direction z and the second direction y. Viewed in the thickness direction z, the second intermediate portion 543 is located outward from the top surface 51 and the bottom surface 52.

[0053] In the motor driver circuit of an inverter device, a half-bridge circuit is generally configured, including a low-side (low-potential side) switching element and a high-side (high-potential side) switching element. In the following explanation, we will assume that these switching elements are MOSFETs. Here, for the low-side switching element, the reference potential of the source of the switching element and the reference potential of the gate driver that drives the switching element are both ground. On the other hand, for the high-side switching element, the reference potential of the source of the switching element and the reference potential of the gate driver that drives the switching element are both equivalent to the potential at the output node of the half-bridge circuit. Since the potential at the output node changes depending on the operation of the high-side and low-side switching elements, the reference potential of the gate driver that drives the high-side switching element changes. When the high-side switching element is ON, this reference potential is equivalent to the voltage applied to the drain of the high-side switching element (for example, 600V or higher). In semiconductor device A1, the ground of the first semiconductor element 11 and the ground of the second semiconductor element 12 are configured to be separate. Therefore, when semiconductor device A1 is used as a gate driver to drive the high-side switching element, a voltage equivalent to the voltage applied to the drain of the high-side switching element is transiently applied to the ground of the second semiconductor device 12.

[0054] Next, an example of a method for forming the support member 23 of the semiconductor device A1 will be described based on Figures 10 to 15. Here, the cross-sectional positions in Figures 12 to 14 are the same as the cross-sectional positions in Figure 8.

[0055] First, as shown in Figure 10, a first resist layer 88 covering the lead frame 80 is formed by photolithography patterning. In Figure 10, the first resist layer 88 is shown as dots. As shown in Figure 12, the lead frame 80 has a main surface 80A and a back surface 80B facing opposite directions in the thickness direction z. The first resist layer 88 covers the main surface 80A. The first resist layer 88 has a first opening 881. The first opening 881 is provided in the region of the lead frame 80 where the support member 23 is formed. The main surface 80A is exposed through the first opening 881.

[0056] As shown in Figure 10, the lead frame 80 has a plurality of leads 81, a frame 82, two first dam bars 83, and two second dam bars 84. Of these, the plurality of leads 81 correspond to a plurality of conductive members 20. The frame 82 surrounds the plurality of leads 81. The plurality of leads 81 are connected to regions of the frame 82 that are spaced apart from each other in a first direction x. The two first dam bars 83 are spaced apart from each other in a first direction x and extend along a second direction y. One of the two first dam bars 83 is connected to a first die pad 21 and a plurality of leads 81 corresponding to a plurality of first terminals 31. The other of the two first dam bars 83 is connected to a second die pad 22 and a plurality of leads 81 corresponding to a plurality of second terminals 32.

[0057] As shown in Figure 10, the two second dam bars 84 are located next to the first opening 881 of the first resist layer 88 when viewed in the thickness direction z. The two second dam bars 84 are located apart from each other in the second direction y and extend along the first direction x. The two second dam bars 84 are connected to both sides in the second direction of the lead 81 corresponding to the first pad portion 211 of the first die pad 21 and the lead 81 corresponding to the second pad portion 221 of the second die pad 22.

[0058] Next, as shown in Figure 11, the insulating portion 231 of the support member 23 is formed. In Figure 11, the insulating portion 231 and the two second dam bars 84 are shown in hatching. The insulating portion 231 is surrounded by a lead 81 corresponding to the first pad portion 211 of the first die pad 21, a lead 81 corresponding to the second pad portion 221 of the second die pad 22, and the two second dam bars 84. The insulating portion 231 is formed through the steps shown in Figures 12 to 14.

[0059] First, as shown in Figure 12, the main surface 80A of the lead frame 80 exposed through the first opening 881 of the first resist layer 88 is subjected to half-etching. This creates a recess 80C in the lead frame 80 that is recessed in the thickness direction z from the main surface 80A. Next, as shown in Figure 13, an insulating portion 231 is formed by mold molding. The insulating portion 231 is formed to fill the recess 80C. Finally, as shown in Figure 14, a second resist layer 89 covering the back surface 80B of the lead frame 80 is formed by photolithography patterning, and then the back surface 80B exposed through the second opening 891 of the second resist layer 89 is subjected to etching. In the thickness direction z, the position, size, and extent of the second opening 891 are equal to those of the first opening 881 of the first resist layer 88. In the stage shown in Figure 14, the portion of the lead frame 80 that overlaps the insulating portion 231 in the thickness direction z is removed, and the insulating portion 231 is exposed from the back surface 80B. The formation of the insulating portion 231 is completed by going through these steps.

[0060] Finally, as shown in Figure 15, the two second dam bars 84 are removed by etching. As a result, both sides of the insulating portion 231 in the first direction x are supported by the lead 81 corresponding to the first pad portion 211 of the first die pad 21 and the lead 81 corresponding to the second pad portion 221 of the second die pad 22. Thus, the support member 23 of the semiconductor device A1 is obtained.

[0061] Next, a modified example of semiconductor device A1, semiconductor device A11, will be described based on Figure 16. The cross-sectional position in Figure 16 is the same as the cross-sectional position in Figure 8.

[0062] As shown in Figure 16, the support member 23 includes two layers stacked in the thickness direction z. The total thickness t of the support member 23 is equal to or greater than the thickness T of the first pad portion 211 of the first die pad 21 and the second pad portion 221 of the second die pad 22. The mounting surface 23A of the support member 23 is connected to the first mounting surface 211A of the first pad portion 211 and the second mounting surface 221A of the second pad portion 221. Thus, the support member 23 fills the gap between the first pad portion 211 and the second pad portion 221 over the entire thickness direction z.

[0063] The support member 23 of the semiconductor device A11 is obtained by first etching the back surface 80B of the lead frame 80 exposed through the second opening 891 of the second resist layer 89 shown in Figure 14, and then by re-forming the insulating portion 231 of the support member 23 by molding, similar to the step shown in Figure 13.

[0064] Next, we will explain the effects and benefits of semiconductor device A1.

[0065] The semiconductor device A1 comprises a plurality of conductive members 20 including a first die pad 21 and a second die pad 22 located apart from each other in a first direction x, a first semiconductor element 11, a second semiconductor element 12, an insulating element 13 that insulates the first semiconductor element 11 and the second semiconductor element 12 from each other, and a sealing resin 50. The semiconductor device A1 further comprises a support member 23 on which the insulating element 13 is mounted. The support member 23 has an insulating portion 231 including resin. The support member 23 is supported by at least one of the first die pad 21, the second die pad 22, and the sealing resin 50. With this configuration, the support member 23 is electrically floating relative to the first die pad 21 and the second die pad 22. This inhibits the movement of charged carriers from the first semiconductor element 11 and the second semiconductor element 12 to the insulating element 13. Therefore, semiconductor device A1 makes it possible to improve the dielectric breakdown voltage between multiple semiconductor elements (first semiconductor element 11 and second semiconductor element 12) and the insulating element 13.

[0066] In semiconductor device A1, the support member 23 is positioned between the first die pad 21 and the second die pad 22 in the first direction x. This sets the shortest distances from the first semiconductor element 11 and the second semiconductor element 12 to the insulating element 13 to be relatively long. As a result, the distance traveled by charged carriers from the first semiconductor element 11 and the second semiconductor element 12 to the insulating element 13 is increased, thus improving the dielectric breakdown voltage between the first semiconductor element 11 and the second semiconductor element 12 and the insulating element 13. Furthermore, in semiconductor device A1, the entire support member 23 is an insulating portion 231. Therefore, the movement of these carriers is more effectively inhibited.

[0067] The semiconductor device A1 further includes a bonding layer 29 interposed between the support member 23 and the insulating element 13. Preferably, the bonding layer 29 has electrical insulating properties. This effectively inhibits the movement of charged carriers from the upper surface (mounting surface 23A) of the support member 23 to the lower surface of the insulating element 13 facing the upper surface.

[0068] The insulating element 13 has a first transmitting / receiving unit 133, a second transmitting / receiving unit 134, and a relay unit 135. In the thickness direction z, the relay unit 135 is located closer to the support member 23 than the first transmitting / receiving unit 133 and the second transmitting / receiving unit 134. With this configuration, the potential difference between the first transmitting / receiving unit 133 and the relay unit 135, and the potential difference between the second transmitting / receiving unit 134 and the relay unit 135 can be set to be small. This improves the dielectric strength of the insulating element 13. Furthermore, the potential difference between the upper surface (mounting surface 23A) of the support member 23 and the lower surface of the insulating element 13 facing the upper surface is reduced. Therefore, it is possible to effectively improve the dielectric strength between the support member 23 and the insulating element 13.

[0069] In the semiconductor device A1, a portion of each of the multiple conductive members 20 is exposed from one of the pair of first side surfaces 53 of the sealing resin 50. This configuration is achieved by exposing the two first suspension lead portions 212 of the first die pad 21 from one side of the sealing resin 50 in the first direction x, and the two second suspension lead portions 222 of the second die pad 22 from the other side of the sealing resin 50 in the first direction x. This allows the multiple conductive members 20 to be arranged away from the pair of second side surfaces 54 of the sealing resin 50. Therefore, the dielectric strength of the semiconductor device A1 can be improved.

[0070] A semiconductor device A2 according to a second embodiment of the present disclosure will be described based on Figures 17 to 19. In these figures, elements that are the same as or similar to those in the semiconductor device A1 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for the sake of understanding, Figure 17 shows the sealing resin 50 transparently, and the sealing resin 50 is indicated by dashed lines.

[0071] In semiconductor device A2, the configuration of the first die pad 21 and the support member 23 differs from that of semiconductor device A1 described above.

[0072] As shown in Figures 17 and 18, in the thickness direction z, the support member 23 overlaps the first pad portion 211 of the first die pad 21. The support member 23 is in contact with the first pad portion 211. In semiconductor device A2, the entire support member 23 is an insulating portion 231.

[0073] As shown in Figure 19, the first pad portion 211 of the first die pad 21 has a recess 211B formed in the first pad portion 211, which is recessed in the thickness direction z from the first mounting surface 211A. The support member 23 is embedded in the recess 211B. Therefore, in the semiconductor device A2, the support member 23 is supported by the first die pad 21.

[0074] As shown in Figures 17 and 18, the multiple third wires 43 are located on the first pad portion 211 of the first die pad 21. The multiple fourth wires 44 straddle the gap between the first pad portion 211 and the second pad portion 221 of the second die pad 22.

[0075] Next, an example of a method for forming the support member 23 of the semiconductor device A2 will be described. First, in the step of forming the first resist layer 88 that covers the main surface 80A of the lead frame 80 shown in Figure 10, a first opening 881 is provided on the portion of the lead 81 corresponding to the first pad portion 211 of the first die pad 21. In this case, the lead frame 80 is pre-processed so that the lead 81 corresponding to the first die pad 21 and the lead 81 corresponding to the second die pad 22 are separated from each other in the first direction x. Next, a recess 211B is formed in the first pad portion 211 by performing a half-etching process on the main surface 80A exposed from the first opening 881 shown in Figure 12. Next, an insulating portion 231 of the support member 23 shown in Figure 13 is formed by molding, thereby forming the insulating portion 231 embedded in the recess 211B. As a result, the support member 23 of the semiconductor device A2 is obtained.

[0076] Next, we will explain the effects and benefits of semiconductor device A2.

[0077] The semiconductor device A2 comprises a plurality of conductive members 20 including a first die pad 21 and a second die pad 22 positioned apart from each other in a first direction x, a first semiconductor element 11, a second semiconductor element 12, an insulating element 13 that insulates the first semiconductor element 11 and the second semiconductor element 12 from each other, and a sealing resin 50. The semiconductor device A2 further comprises a support member 23 on which the insulating element 13 is mounted. The support member 23 has an insulating portion 231 including resin. The support member 23 is supported by at least one of the first die pad 21, the second die pad 22, and the sealing resin 50. Therefore, the semiconductor device A2 also makes it possible to improve the dielectric breakdown voltage between the plurality of semiconductor elements (first semiconductor element 11 and second semiconductor element 12) and the insulating element 13. Furthermore, by adopting a configuration common to the semiconductor device A1, the semiconductor device A2 achieves the same effects as the semiconductor device A1.

[0078] In semiconductor device A2, a recess 211B is formed in the first pad portion 211 of the first die pad 21, indented in the thickness direction z. The support member 23 is embedded in the recess 211B. As a result, in the method for forming the support member 23 of semiconductor device A2, the steps of etching the back surface 80B of the lead frame 80 exposed through the second opening 891 of the second resist layer 89 shown in Figure 14, and removing the two second dam bars 84 shown in Figure 15 by etching are unnecessary. Therefore, the man-hours required to form the support member 23 can be reduced compared to the man-hours required to form the support member 23 of semiconductor device A1.

[0079] A semiconductor device A3 according to a third embodiment of this disclosure will be described based on Figures 20 to 22. In these figures, elements that are the same as or similar to those in the semiconductor device A1 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 20 shows the sealing resin 50 transparently, and the sealing resin 50 is indicated by dashed lines.

[0080] In semiconductor device A3, the configuration of the second die pad 22 and the support member 23 differs from that of semiconductor device A1 described above.

[0081] As shown in Figures 20 and 21, in the thickness direction z, the support member 23 overlaps the second pad portion 221 of the second die pad 22. The support member 23 is in contact with the second pad portion 221. In semiconductor device A3, the entire support member 23 is an insulating portion 231.

[0082] As shown in Figure 22, the second pad portion 221 of the second die pad 22 has a recess 221B formed in the second pad portion 221B that is recessed in the thickness direction z from the second mounting surface 221A. The support member 23 is embedded in the recess 221B. Therefore, in the semiconductor device A3, the support member 23 is supported by the second die pad 22.

[0083] As shown in Figures 20 and 21, the multiple third wires 43 straddle the gap between the first pad portion 211 of the first die pad 21 and the second pad portion 221 of the second die pad 22. The multiple fourth wires 44 are located above the second pad portion 221.

[0084] Next, an example of a method for forming the support member 23 of the semiconductor device A3 will be described. First, in the step of forming the first resist layer 88 that covers the main surface 80A of the lead frame 80 shown in Figure 10, a first opening 881 is provided on the portion of the lead 81 corresponding to the second pad portion 221 of the second die pad 22. In this case, the lead frame 80 is pre-processed so that the lead 81 corresponding to the first die pad 21 and the lead 81 corresponding to the second die pad 22 are separated from each other in the first direction x. Next, a recess 221B is formed in the second pad portion 221 by performing a half-etching process on the main surface 80A exposed from the first opening 881 shown in Figure 12. Next, an insulating portion 231 of the support member 23 shown in Figure 13 is formed by molding, thereby forming the insulating portion 231 embedded in the recess 221B. As a result, the support member 23 of the semiconductor device A3 is obtained.

[0085] Next, we will explain the effects and benefits of semiconductor device A3.

[0086] The semiconductor device A3 comprises a plurality of conductive members 20 including a first die pad 21 and a second die pad 22 positioned apart from each other in a first direction x, a first semiconductor element 11, a second semiconductor element 12, an insulating element 13 that insulates the first semiconductor element 11 and the second semiconductor element 12 from each other, and a sealing resin 50. The semiconductor device A3 further comprises a support member 23 on which the insulating element 13 is mounted. The support member 23 has an insulating portion 231 including resin. The support member 23 is supported by at least one of the first die pad 21, the second die pad 22, and the sealing resin 50. Therefore, the semiconductor device A3 also makes it possible to improve the dielectric strength between the plurality of semiconductor elements (first semiconductor element 11 and second semiconductor element 12) and the insulating element 13. Furthermore, by adopting a configuration common to the semiconductor device A1, the semiconductor device A3 achieves the same effects as the semiconductor device A1.

[0087] In semiconductor device A3, a recess 221B is formed in the second pad portion 221 of the second die pad 22, which is recessed in the thickness direction z. The support member 23 is embedded in the recess 221B. As a result, the method for forming the support member 23 of semiconductor device A3 is the same as the method for forming the support member 23 of semiconductor device A2 described above. Therefore, the man-hours required to form the support member 23 can be reduced compared to the man-hours required to form the support member 23 of semiconductor device A1.

[0088] A semiconductor device A4 according to a fourth embodiment of the present disclosure will be described based on Figures 23 and 24. In these figures, elements that are the same as or similar to those in the semiconductor device A1 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 23 shows the sealing resin 50 being permeable. In Figure 23, the permeable sealing resin 50 is shown by dashed lines.

[0089] In semiconductor device A4, the configuration of the support member 23 differs from that of semiconductor device A1 described above.

[0090] As shown in Figures 23 and 24, the support member 23 includes a metal portion 232 supported by an insulating portion 231. The metal portion 232 is located between the first die pad 21 and the second die pad 22 in a first direction x. The insulating element 13 is mounted on the mounting surface 23A of the metal portion 232.

[0091] The metal portion 232 of the support member 23 corresponds to a part of the lead frame 80 shown in Figure 10. Therefore, the metal portion 232 is obtained from the lead frame 80, just like the multiple conductive members 20. Consequently, the composition of the metal portion 232 is the same as the composition of the multiple conductive members 20. The thickness of the metal portion 232 is equal to the thickness T of the first pad portion 211 of the first die pad 21 and the second pad portion 221 of the second die pad 22, as shown in Figure 8.

[0092] As shown in Figures 23 and 24, the insulating portion 231 of the support member 23 has a first portion 231A and a second portion 231B, which are positioned with a metal portion 232 in between. In the semiconductor device A4, the first portion 231A and the second portion 231B are positioned apart from each other in a first direction x. The first portion 231A is in contact with the first pad portion 211 of the first die pad 21. The second portion 231B is in contact with the second pad portion 221 of the second die pad 22. Therefore, in the semiconductor device A4, the support member 23 is supported by the first die pad 21, the second die pad 22 and the sealing resin 50. Furthermore, the metal portion 232 is supported by the first portion 231A, the second portion 231B and the sealing resin 50. Multiple third wires 43 straddle the first portion 231A. Multiple fourth wires 44 cross over section 231B.

[0093] Next, an example of a method for forming the support member 23 of the semiconductor device A4 will be described based on Figures 25 and 26.

[0094] Figure 25 shows the state in which the insulating portion 231 of the support member 23 is formed on the lead frame 80. The insulating portion 231 is formed through the steps shown in Figures 12 to 14, similar to the insulating portion 231 of the semiconductor device A1. In Figure 25, the first portion 231A and the second portion 231B of the insulating portion 231 and the two second dam bars 84 are shown with hatching. The metal portion 232 of the support member 23 is formed between the first portion 231A and the second portion 231B in the first direction x. Two second dam bars 84 are connected to both sides in the second direction of the lead 81 corresponding to the first pad portion 211 of the first die pad 21, the lead 81 corresponding to the second pad portion 221 of the second die pad 22, and the metal portion 232.

[0095] As shown in Figure 25, the first part 231A of the insulating part 231 is surrounded by a lead 81 corresponding to the first pad part 211 of the first die pad 21, a metal part 232, and two second dam bars 84. The second part 231B of the insulating part 231 is surrounded by a lead 81 corresponding to the second pad part 221 of the second die pad 22, a metal part 232, and two second dam bars 84.

[0096] Figure 26 shows the state after the two second dam bars 84 have been removed by etching. As a result, both sides of the metal part 232 in the first direction x are supported by the first part 231A and the second part 231B of the insulating part 231. Furthermore, the first part 231A is supported by a lead 81 corresponding to the first pad part 211 of the first die pad 21, and the second part 231B is supported by a lead 81 corresponding to the second pad part 221 of the second die pad 22. Thus, the support member 23 of the semiconductor device A4 is obtained.

[0097] Next, we will explain the effects and benefits of semiconductor device A4.

[0098] The semiconductor device A4 comprises a plurality of conductive members 20 including a first die pad 21 and a second die pad 22 positioned apart from each other in a first direction x, a first semiconductor element 11, a second semiconductor element 12, an insulating element 13 that insulates the first semiconductor element 11 and the second semiconductor element 12 from each other, and a sealing resin 50. The semiconductor device A4 further comprises a support member 23 on which the insulating element 13 is mounted. The support member 23 has an insulating portion 231 including resin. The support member 23 is supported by at least one of the first die pad 21, the second die pad 22, and the sealing resin 50. Therefore, the semiconductor device A4 also makes it possible to improve the dielectric strength between the plurality of semiconductor elements (first semiconductor element 11 and second semiconductor element 12) and the insulating element 13. Furthermore, by adopting a configuration common to the semiconductor device A1, the semiconductor device A4 achieves the same effects as the semiconductor device A1.

[0099] A semiconductor device A5 according to the fifth embodiment of this disclosure will be described based on Figures 27 to 31. In these figures, elements that are the same as or similar to those in the semiconductor device A1 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 27 shows the sealing resin 50 transparently, and the sealing resin 50 is indicated by dashed lines.

[0100] In semiconductor device A5, the configuration of the insulating portion 231 of the support member 23 differs from that of semiconductor device A4 described above.

[0101] As shown in Figures 27 and 31, the insulating portion 231 of the support member 23 has a first portion 231A and a second portion 231B, which are positioned with a metal portion 232 in between. The first portion 231A and the second portion 231B are positioned apart from each other in the second direction y. As a result, in the semiconductor device A5, the support member 23 is positioned apart from the first die pad 21 and the second die pad 22. Therefore, in the semiconductor device A5, the support member 23 is supported by the sealing resin 50.

[0102] As shown in Figure 31, the first part 231A and the second part 231B of the insulating part 231 have end faces 23B facing the second direction y. As shown in Figure 29, the end face 23B of the first part 231A is exposed from the second intermediate part 543 of the second side surface 54 located on one side of the pair of second side surfaces 54 of the sealing resin 50 in the second direction y. As shown in Figure 28, the end face 23B of the second part 231B is exposed from the second intermediate part 543 of the second side surface 54 located on the other side of the pair of second side surfaces 54 in the second direction y. Therefore, in the semiconductor device A5, the first part 231A and the second part 231B are exposed from both sides of the sealing resin 50 in the second direction y.

[0103] As shown in Figures 27 and 30, multiple third wires 43 straddle the gap between the first pad portion 211 of the first die pad 21 and the metal portion 232 of the support member 23. Multiple fourth wires 44 straddle the gap between the metal portion 232 and the second pad portion 221 of the second die pad 22.

[0104] Next, an example of a method for forming the support member 23 of the semiconductor device A5 will be described based on Figures 32 and 33.

[0105] Figure 32 shows the state in which the insulating portion 231 of the support member 23 is formed on the lead frame 80. The insulating portion 231 is formed through the steps shown in Figures 12 to 14, similar to the insulating portion 231 of the semiconductor device A1. In Figure 32, the first portion 231A and the second portion 231B of the insulating portion 231 and the two second dam bars 84 are shown with hatching. The metal portion 232 of the support member 23 is formed between the first portion 231A and the second portion 231B in the second direction y. The two second dam bars 84 are positioned with the metal portion 232 in between in the first direction x and extend along the second direction y. Both sides of the two second dam bars 84 in the second direction y are connected to the frame portion 82. The two second dam bars 84 are connected to both sides of the metal portion 232 in the first direction x. Part 1 231A and Part 2 231B are each surrounded by two second dam bars 84, a frame 82, and a metal part 232.

[0106] Figure 33 shows the state after the two second dam bars 84 have been removed by etching. As a result, both sides of the metal part 232 in the second direction y are supported by the first part 231A and the second part 231B of the insulating part 231. Furthermore, the first part 231A and the second part 231B are supported by the frame part 82. The metal part 232, the first part 231A and the second part 231B are located away from the multiple leads 81. Thus, the support member 23 for the semiconductor device A5 is obtained.

[0107] Next, we will explain the effects and benefits of semiconductor device A5.

[0108] The semiconductor device A5 comprises a plurality of conductive members 20 including a first die pad 21 and a second die pad 22 positioned apart from each other in a first direction x, a first semiconductor element 11, a second semiconductor element 12, an insulating element 13 that insulates the first semiconductor element 11 and the second semiconductor element 12 from each other, and a sealing resin 50. The semiconductor device A5 further comprises a support member 23 on which the insulating element 13 is mounted. The support member 23 has an insulating portion 231 including resin. The support member 23 is supported by at least one of the first die pad 21, the second die pad 22, and the sealing resin 50. Therefore, the semiconductor device A5 also makes it possible to improve the dielectric strength between the plurality of semiconductor elements (first semiconductor element 11 and second semiconductor element 12) and the insulating element 13. Furthermore, by adopting a configuration common to the semiconductor device A1, the semiconductor device A5 achieves the same effects as the semiconductor device A1.

[0109] A semiconductor device A6 according to the sixth embodiment of this disclosure will be described based on Figures 34 to 36. In these figures, elements that are the same as or similar to those in the semiconductor device A1 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for the sake of understanding, Figure 34 shows the sealing resin 50 transparently, and the sealing resin 50 is indicated by dashed lines.

[0110] In semiconductor device A6, the configuration of the support member 23 differs from that of semiconductor device A1 described above.

[0111] As shown in Figures 34 and 35, the support member 23 is located between the first die pad 21 and the second die pad 22 in the first direction x, and is located away from the first die pad 21 and the second die pad 22. Therefore, in the semiconductor device A6, the support member 23 is supported by the sealing resin 50. Furthermore, in the semiconductor device A6, the entire support member 23 is an insulating portion 231.

[0112] As shown in Figure 36, the insulating portion 231 has a pair of end faces 23B facing the second direction y. Of the pair of second sides 54 of the sealing resin 50, one end face 23B is exposed from the second intermediate portion 543 of the second side 54 located on one side in the second direction y (see Figure 29). Of the pair of second sides 54, the other end face 23B is exposed from the second intermediate portion 543 of the second side 54 located on the other side in the second direction y (see Figure 28). Therefore, in the semiconductor device A6, the support members 23 are exposed from both sides of the sealing resin 50 in the second direction y.

[0113] As shown in Figures 34 and 35, multiple third wires 43 span the gap between the first pad portion 211 of the first die pad 21 and the support member 23. Multiple fourth wires 44 span the gap between the support member 23 and the second pad portion 221 of the second die pad 22.

[0114] Next, an example of a method for forming the support member 23 of the semiconductor device A6 will be described based on Figures 37 and 38.

[0115] Figure 37 shows the state in which the insulating portion 231 of the support member 23 is formed on the lead frame 80. The insulating portion 231 is formed through the steps shown in Figures 12 to 14, similar to the insulating portion 231 of the semiconductor device A1. In Figure 37, the insulating portion 231 and the two second dam bars 84 are shown with hatching. The two second dam bars 84 are positioned with the insulating portion 231 in between in the first direction x and extend along the second direction y. Both sides of the two second dam bars 84 in the second direction y are connected to the frame portion 82. The insulating portion 231 is surrounded by the two second dam bars 84 and the frame portion 82.

[0116] Figure 38 shows the state after the two second dam bars 84 have been removed by etching. As a result, both sides of the insulating portion 231 in the second direction y are supported by the frame portion 82. The insulating portion 231 is located away from the multiple leads 81. Thus, the support member 23 for the semiconductor device A6 is obtained.

[0117] Next, we will explain the effects and benefits of semiconductor device A6.

[0118] The semiconductor device A6 comprises a plurality of conductive members 20 including a first die pad 21 and a second die pad 22 positioned apart from each other in a first direction x, a first semiconductor element 11, a second semiconductor element 12, an insulating element 13 that insulates the first semiconductor element 11 and the second semiconductor element 12 from each other, and a sealing resin 50. The semiconductor device A6 further comprises a support member 23 on which the insulating element 13 is mounted. The support member 23 has an insulating portion 231 containing resin. The support member 23 is supported by at least one of the first die pad 21, the second die pad 22, and the sealing resin 50. Therefore, the semiconductor device A6 also makes it possible to improve the dielectric strength between the plurality of semiconductor elements (first semiconductor element 11 and second semiconductor element 12) and the insulating element 13. Furthermore, by adopting a configuration common to the semiconductor device A1, the semiconductor device A6 achieves the same effects as the semiconductor device A1.

[0119] A semiconductor device A7 according to the seventh embodiment of this disclosure will be described based on Figures 39 to 42. In these figures, elements that are the same as or similar to those in the semiconductor device A1 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for the sake of understanding, Figure 39 shows the sealing resin 50 through which the sealing resin 50 is visible, and the sealing resin 50 is shown with dashed lines.

[0120] In semiconductor device A7, the configuration of the insulating element 13 differs from that of semiconductor device A1 described above. Semiconductor device A7 further comprises a plurality of fifth wires 45.

[0121] As shown in Figures 39 to 41, the insulating element 13 includes a first insulating element 13A and a second insulating element 13B that are located apart from each other. In the semiconductor device A7, the first insulating element 13A and the second insulating element 13B are located apart from each other in the first direction x such that the first insulating element 13A is closer to the first semiconductor element 11 than the second insulating element 13B. The first insulating element 13A and the second insulating element 13B are bonded to the mounting surface 23A of the support member 23 via a bonding layer 29. In the semiconductor device A7, the bonding layer 29 is integrated. Alternatively, the bonding layer 29 may be configured to be separated from each other, similar to the first insulating element 13A and the second insulating element 13B.

[0122] As shown in Figures 40 and 41, the first insulating element 13A has a plurality of first relay electrodes 131 and a plurality of second relay electrodes 132. The plurality of third wires 43 are joined to the plurality of first relay electrodes 131 and to the plurality of first electrodes 111 of the first semiconductor element 11. Therefore, the plurality of first relay electrodes 131 are electrically connected to the first semiconductor element 11.

[0123] As shown in Figure 42, the first insulating element 13A has a first transmitting / receiving unit 133 and a second transmitting / receiving unit 134. In the semiconductor device A7, the first transmitting / receiving unit 133 and the second transmitting / receiving unit 134 are inductors. The first transmitting / receiving unit 133 and the second transmitting / receiving unit 134 are located apart from each other in the thickness direction z. In the first insulating element 13A, a dielectric layer (not shown) made of silicon dioxide or the like is interposed between the first transmitting / receiving unit 133 and the second transmitting / receiving unit 134. The first transmitting / receiving unit 133 is conductive to a plurality of first relay electrodes 131. Therefore, the first transmitting / receiving unit 133 is conductive to the first semiconductor device 11. The second transmitting / receiving unit 134 transmits and receives signals with the first transmitting / receiving unit 133. The second transmitting / receiving unit 134 is conductive to a plurality of second relay electrodes 132. In the thickness direction z, the second transmitting / receiving unit 134 is located closer to the support member 23 than the first transmitting / receiving unit 133.

[0124] As shown in Figures 40 and 41, the second insulating element 13B has a plurality of third relay electrodes 136 and a plurality of fourth relay electrodes 137. The plurality of fourth wires 44 are joined to the plurality of fourth relay electrodes 137 and to the plurality of second electrodes 121 of the second semiconductor element 12. Therefore, the plurality of fourth relay electrodes 137 are electrically connected to the second semiconductor element 12.

[0125] As shown in Figure 42, the second insulating element 13B has a third transmitting / receiving unit 138 and a fourth transmitting / receiving unit 139. In semiconductor device A7, the third transmitting / receiving unit 138 and the fourth transmitting / receiving unit 139 are inductors. The third transmitting / receiving unit 138 and the fourth transmitting / receiving unit 139 are located apart from each other in the thickness direction z. In the second insulating element 13B, a dielectric layer (not shown) made of silicon dioxide or the like is interposed between the third transmitting / receiving unit 138 and the fourth transmitting / receiving unit 139. The fourth transmitting / receiving unit 139 is conductive to a plurality of fourth relay electrodes 137. Therefore, the fourth transmitting / receiving unit 139 is conductive to the second semiconductor element 12. The third transmitting / receiving unit 138 transmits and receives signals with the fourth transmitting / receiving unit 139. The third transmitting / receiving unit 138 is conductive to a plurality of third relay electrodes 136. In the thickness direction z, the third transmitting / receiving unit 138 is located closer to the support member 23 than the fourth transmitting / receiving unit 139.

[0126] As shown in Figures 40 and 41, the multiple fifth wires 45 are joined to the multiple third relay electrodes 136 of the second insulating element 13B and the multiple second relay electrodes 132 of the first insulating element 13A. The composition of the multiple fifth wires 45 includes gold. As a result, the multiple second relay electrodes 132 and the multiple third relay electrodes 136 are conductive to each other. Therefore, the third transmitting / receiving unit 138 of the second insulating element 13B is conductive to the second transmitting / receiving unit 134 of the first insulating element 13A. Consequently, the potential of the third transmitting / receiving unit 138 is equal to the potential of the second transmitting / receiving unit 134. Thus, the potentials of the second transmitting / receiving unit 134 and the third transmitting / receiving unit 138 are between the potential of the first transmitting / receiving unit 133 of the first insulating element 13A and the potential of the fourth transmitting / receiving unit 139 of the second insulating element 13B.

[0127] The configuration of the support member 23 on which the first insulating element 13A and the second insulating element 13B are mounted is the same as the configuration of the support member 23 of semiconductor device A1. In addition, the configuration of the support member 23 on which the first insulating element 13A and the second insulating element 13B are mounted may be the same as the configuration of the support member 23 of each of the semiconductor devices A2 to A6 described above.

[0128] Next, we will explain the effects and benefits of semiconductor device A7.

[0129] The semiconductor device A7 comprises a plurality of conductive members 20 including a first die pad 21 and a second die pad 22 positioned apart from each other in a first direction x, a first semiconductor element 11, a second semiconductor element 12, an insulating element 13 that insulates the first semiconductor element 11 and the second semiconductor element 12 from each other, and a sealing resin 50. The semiconductor device A7 further comprises a support member 23 on which the insulating element 13 is mounted. The support member 23 has an insulating portion 231 including resin. The support member 23 is supported by at least one of the first die pad 21, the second die pad 22, and the sealing resin 50. Therefore, the semiconductor device A7 also makes it possible to improve the dielectric breakdown voltage between the plurality of semiconductor elements (first semiconductor element 11 and second semiconductor element 12) and the insulating element 13. Furthermore, by adopting a configuration common to the semiconductor device A1, the semiconductor device A7 achieves the same effects as the semiconductor device A1.

[0130] The insulating element 13 of the semiconductor device A7 includes a first insulating element 13A and a second insulating element 13B, which are located apart from each other. The first insulating element 13A has a first transmitting / receiving unit 133 and a second transmitting / receiving unit 134. The second insulating element 13B has a third transmitting / receiving unit 138 and a fourth transmitting / receiving unit 139. The third transmitting / receiving unit 138 is conductive to the second transmitting / receiving unit 134. In the thickness direction z, the second transmitting / receiving unit 134 and the third transmitting / receiving unit 138 are located closer to the support member 23 than the first transmitting / receiving unit 133 and the fourth transmitting / receiving unit 139. This allows the potential difference between the first transmitting / receiving unit 133 and the second transmitting / receiving unit 134 to be set small in the first insulating element 13A. In addition, the potential difference between the third transmitting / receiving unit 138 and the fourth transmitting / receiving unit 139 can be set small in the second insulating element 13B. In other words, the potential difference generated in each of the first insulating element 13A and the second insulating element 13B is reduced. Furthermore, the potential difference between the upper surface (mounting surface 23A) of the support member 23 and the lower surface of the insulating element 13 facing the upper surface is also reduced. Therefore, it becomes possible to effectively improve the dielectric strength between the support member 23 and the insulating element 13. Moreover, in semiconductor device A7, unlike semiconductor device A1, it is not necessary to provide the relay section 135 on the insulating element 13.

[0131] This disclosure is not limited to the embodiments described above. The specific configuration of each part of this disclosure can be modified in various ways.

[0132] This disclosure includes embodiments described in the following appendix. Note 1. Multiple conductive members including a first die pad and a second die pad, The first semiconductor element mounted on the first die pad, The second semiconductor element mounted on the second die pad, An insulating element electrically connected to the first semiconductor element and the second semiconductor element, and insulating the first semiconductor element and the second semiconductor element from each other, A sealing resin covering the first semiconductor element, the second semiconductor element, the insulating element, and at least a portion of each of the plurality of conductive members, The insulating part is at least partly made of resin, and the insulating element is mounted on a support member, The first die pad and the second die pad are positioned apart from each other in a first direction perpendicular to the thickness direction of the first semiconductor element. A semiconductor device in which the support member is supported by at least one of the first die pad, the second die pad, and the sealing resin. Note 2. The semiconductor device according to Appendix 1, wherein the support member is in contact with at least one of the first die pad and the second die pad. Note 3. The support member is located between the first die pad and the second die pad in the first direction. The semiconductor device described in Appendix 2, wherein the support member is supported by the first die pad and the second die pad. Note 4. The first die pad has a recess formed in the thickness direction, The support member is embedded in the recess, and is the semiconductor device described in Appendix 2. Note 5. The second die pad has a recess formed in the thickness direction, The support member is embedded in the recess, and is the semiconductor device described in Appendix 2. Note 6. The support member is located between the first die pad and the second die pad in the first direction and includes a metal portion supported by the insulating portion. The composition of the metal part is the same as the composition of the plurality of conductive members. The insulating element is mounted on the metal part, The semiconductor device according to Appendix 1, wherein the insulating portion has a first portion and a second portion positioned with the metal portion in between. Note 7. The first and second parts are located apart from each other in the first direction, The first part is in contact with the first die pad, The second part is the semiconductor device described in Appendix 6, which is in contact with the second die pad. Note 8. The first and second parts are located apart from each other in the thickness direction and in a second direction perpendicular to the first direction. The semiconductor device according to Appendix 6, wherein the first and second parts are exposed from both sides of the sealing resin in the second direction. Note 9. The support member is located between the first die pad and the second die pad in the first direction, and is located away from the first die pad and the second die pad. The semiconductor device according to Appendix 1, wherein the support member is exposed from both sides of the sealing resin in the thickness direction and in a second direction perpendicular to the first direction. Note 10. The plurality of conductive members include a plurality of first terminals exposed from one side of the sealing resin in the first direction, and a plurality of second terminals exposed from the other side of the sealing resin in the first direction. The first semiconductor element is electrically connected to the plurality of first terminals, The semiconductor device according to any one of the appendices 1 to 9, wherein the second semiconductor element is electrically connected to the plurality of second terminals. Note 11. The semiconductor device according to Appendix 10, wherein the plurality of first terminals and the plurality of second terminals are arranged along the thickness direction and a second direction perpendicular to the first direction, respectively. Note 12. The first die pad has a first pad portion on which the first semiconductor element is mounted, and two first suspension lead portions connected to both sides of the first pad portion in the second direction. The semiconductor device according to Appendix 11, wherein the two first suspension lead portions are exposed from one side of the sealing resin in the first direction. Note 13. The second die pad has a second pad portion on which the second semiconductor element is mounted, and two second suspension lead portions connected to both sides of the second pad portion in the second direction. The semiconductor device according to Appendix 12, wherein the two second suspension lead portions are exposed from the other side of the sealing resin in the first direction. Note 14. The semiconductor device according to any one of the appendices 1 to 13, wherein the insulating element is either an inductive type or a capacitive type. Note 15. The insulating element includes a first transmitting / receiving unit that conducts to the first semiconductor element, a second transmitting / receiving unit that conducts to the second semiconductor element, and a relay unit that transmits and receives signals between the first transmitting / receiving unit and the second transmitting / receiving unit. The semiconductor device according to Appendix 14, wherein, in the thickness direction, the relay portion is located closer to the support member than the first transmitting / receiving portion and the second transmitting / receiving portion. Note 16. The insulating element includes a first insulating element and a second insulating element located apart from each other. The first insulating element has a first transmitting / receiving unit that conducts to the first semiconductor element, and a second transmitting / receiving unit that transmits and receives signals to and from the first transmitting / receiving unit. The second insulating element has a third transmitting / receiving unit that is conductive to the second transmitting / receiving unit, and a fourth transmitting / receiving unit that is conductive to the second semiconductor element and transmits and receives signals with the third transmitting / receiving unit. The semiconductor device according to Appendix 14, wherein, in the thickness direction, the second transmitting / receiving unit and the third transmitting / receiving unit are located closer to the support member than the first transmitting / receiving unit and the fourth transmitting / receiving unit. Note 17. The bonding layer is further interposed between the support member and the insulating element, The aforementioned bonding layer is electrically insulating, as described in any one of Appendix 1 to 16. [Explanation of Symbols]

[0133] A1,A2,A3,A4,A5,A6,A7: Semiconductor device 11: First semiconductor element 111: First electrode 12: Second semiconductor element 121: Second electrode 13: Insulating element 13A: First insulating element 13B: Second insulating element 131: First relay electrode 132: Second relay electrode 133: First transceiver unit 134: Second transmitting / receiving unit 135: Relay unit 136: Third relay electrode 137: Fourth relay electrode 138: Third transmitting / receiving unit 139: Fourth transmitting / receiving unit 20: Conductive material 21: First die pad 211: First pad section 211A: First mounting surface 211B: Recess 212: First suspension lead section 212A: Covered portion 212B: Exposed portion 22: Second die pad 221: Second pad section 221A: Second mounting surface 221B: Recess 222: Second suspension lead section 222A: Covering section 222B: Exposed part 23: Support member 23A: Mounting surface 23B: End surface 231: Insulation section 231A: Part 1 231B: Part 2 232: Metal part 29: Bonding layer 31: First terminal 31A: 1st intermediate terminal 31B: 1st side terminal 311: Covered portion 312: Exposed portion 32: 2nd terminal 32A: 2nd intermediate terminal 32B: Second terminal 321: Covering 322: Exposed part 41: First wire 42: Second wire 43: Third wire 44: Fourth wire 45: Fifth wire 50: Sealing resin 51: Top surface 52: Bottom 53: First side 531: First upper section 532: First lower section 533: First intermediate section 54: Second side 541: Second upper section 542: Second lower section 543: Second intermediate section 80: Lead frame 80A: Main surface 80B: Back surface 80C: Recess 81: Lead 82: Frame section 83: First dam bar 84: Second dam bar 88: First resistance layer 881: First opening 89: Second resist layer 891: Second opening z: Thickness direction x: 1st direction y: 2nd direction

Claims

1. Multiple conductive members including a first die pad and a second die pad, The first semiconductor element mounted on the first die pad, The second semiconductor element mounted on the second die pad, An insulating element electrically connected to the first semiconductor element and the second semiconductor element, and insulating the first semiconductor element and the second semiconductor element from each other, A sealing resin covering the first semiconductor element, the second semiconductor element, the insulating element, and at least a portion of each of the plurality of conductive members, The device comprises an insulating part which contains at least a portion of resin, and a support member on which the insulating element is mounted, The first die pad and the second die pad are separated from each other in a first direction perpendicular to the thickness direction of the first semiconductor element. The support member is supported by the first die pad and the second die pad, The support member is located between the first die pad and the second die pad in the first direction, and is a semiconductor device.

2. A plurality of conductive members including a first die pad and a second die pad, The first semiconductor element mounted on the first die pad, The second semiconductor element mounted on the second die pad, An insulating element electrically connected to the first semiconductor element and the second semiconductor element, and insulating the first semiconductor element and the second semiconductor element from each other, A sealing resin covering the first semiconductor element, the second semiconductor element, the insulating element, and at least a portion of each of the plurality of conductive members, The device comprises an insulating part which contains at least a portion of resin, and a support member on which the insulating element is mounted, The first die pad and the second die pad are separated from each other in a first direction perpendicular to the thickness direction of the first semiconductor element. The support member is supported by the first die pad, The first die pad has a recess formed therein that is recessed in the thickness direction, The support member is a semiconductor device embedded in the recess.

3. A plurality of conductive members including a first die pad and a second die pad, The first semiconductor element mounted on the first die pad, The second semiconductor element mounted on the second die pad, An insulating element electrically connected to the first semiconductor element and the second semiconductor element, and insulating the first semiconductor element and the second semiconductor element from each other, A sealing resin covering the first semiconductor element, the second semiconductor element, the insulating element, and at least a portion of each of the plurality of conductive members, The device comprises an insulating part which contains at least a portion of resin, and a support member on which the insulating element is mounted, The first die pad and the second die pad are separated from each other in a first direction perpendicular to the thickness direction of the first semiconductor element. The support member is supported by the second die pad, The second die pad has a recess formed therein that is recessed in the thickness direction, The support member is a semiconductor device embedded in the recess.

4. The semiconductor device according to any one of claims 1 to 3, wherein the support member is in contact with at least one of the first die pad and the second die pad.

5. A plurality of conductive members including a first die pad and a second die pad, The first semiconductor element mounted on the first die pad, The second semiconductor element mounted on the second die pad, An insulating element electrically connected to the first semiconductor element and the second semiconductor element, and insulating the first semiconductor element and the second semiconductor element from each other, A sealing resin covering the first semiconductor element, the second semiconductor element, the insulating element, and at least a portion of each of the plurality of conductive members, The device comprises an insulating part which contains at least a portion of resin, and a support member on which the insulating element is mounted, The first die pad and the second die pad are separated from each other in a first direction perpendicular to the thickness direction of the first semiconductor element. The support member is supported by at least one of the first die pad, the second die pad, and the sealing resin. The support member is located between the first die pad and the second die pad in the first direction and includes a metal portion supported by the insulating portion. The composition of the metal part is the same as the composition of the plurality of conductive members. The insulating element is mounted on the metal part, The insulating portion has a first portion and a second portion positioned with the metal portion in between, in a semiconductor device.

6. The first part and the second part are separated from each other in the first direction, The first part is in contact with the first die pad, The semiconductor device according to claim 5, wherein the second part is in contact with the second die pad.

7. The first part and the second part are separated from each other in the thickness direction and in a second direction perpendicular to the first direction, The semiconductor device according to claim 5, wherein the first and second parts are exposed from both sides of the sealing resin in the second direction.

8. A plurality of conductive members including a first die pad and a second die pad, The first semiconductor element mounted on the first die pad, The second semiconductor element mounted on the second die pad, An insulating element electrically connected to the first semiconductor element and the second semiconductor element, and insulating the first semiconductor element and the second semiconductor element from each other, A sealing resin covering the first semiconductor element, the second semiconductor element, the insulating element, and at least a portion of each of the plurality of conductive members, The device comprises an insulating part which contains at least a portion of resin, and a support member on which the insulating element is mounted, The first die pad and the second die pad are separated from each other in a first direction perpendicular to the thickness direction of the first semiconductor element. The support member is supported by the sealing resin, The support member is located between the first die pad and the second die pad in the first direction, and is separated from each of the first die pad and the second die pad. A semiconductor device in which the support member is exposed from both sides of the sealing resin in the thickness direction and in a second direction perpendicular to the first direction.

9. The plurality of conductive members include a plurality of first terminals exposed from one side of the sealing resin in the first direction, and a plurality of second terminals exposed from the other side of the sealing resin in the first direction, The first semiconductor element is electrically connected to the plurality of first terminals, The semiconductor device according to any one of claims 1 to 8, wherein the second semiconductor element is electrically connected to the plurality of second terminals.

10. The semiconductor device according to claim 9, wherein the plurality of first terminals and the plurality of second terminals are arranged along the thickness direction and a second direction perpendicular to the first direction.

11. The first die pad has a first pad portion on which the first semiconductor element is mounted, and two first suspension lead portions connected to both sides of the first pad portion in the second direction, The semiconductor device according to claim 10, wherein the two first suspension lead portions are exposed from one side of the sealing resin in the first direction.

12. The second die pad has a second pad portion on which the second semiconductor element is mounted, and two second suspension lead portions connected to both sides of the second direction of the second pad portion, The semiconductor device according to claim 11, wherein the two second suspension lead portions are exposed from the other side of the sealing resin in the first direction.

13. The semiconductor device according to any one of claims 1 to 12, wherein the insulating element is either an inductive type or a capacitive type.

14. The insulating element comprises a first transmitting / receiving unit that conducts to the first semiconductor element, a second transmitting / receiving unit that conducts to the second semiconductor element, and a relay unit that transmits and receives signals between the first transmitting / receiving unit and the second transmitting / receiving unit. The semiconductor device according to claim 13, wherein, in the thickness direction, the relay portion is located closer to the support member than the first transmitting / receiving portion and the second transmitting / receiving portion.

15. The insulating element includes a first insulating element and a second insulating element that are separated from each other, The first insulating element includes a first transmitting / receiving unit that conducts to the first semiconductor element, and a second transmitting / receiving unit that transmits and receives signals to and from the first transmitting / receiving unit. The second insulating element has a third transmitting / receiving unit that is conductive to the second transmitting / receiving unit, and a fourth transmitting / receiving unit that is conductive to the second semiconductor element and transmits and receives signals with the third transmitting / receiving unit. The semiconductor device according to claim 13, wherein in the thickness direction, the second transmitting / receiving unit and the third transmitting / receiving unit are located closer to the support member than the first transmitting / receiving unit and the fourth transmitting / receiving unit.

16. The bonding layer further comprises the support member and the insulating element, The semiconductor device according to any one of claims 1 to 15, wherein the bonding layer has electrical insulating properties.

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