Semiconductor equipment

Abstract

To provide a technology that can reduce variation in gate-source voltage in a plurality of semiconductor elements.SOLUTION: A semiconductor device comprises a plurality of semiconductor elements, a metal electrode, and a control wire. Each of the plurality of semiconductor elements has a control electrode for controlling main current. The main current of the plurality of semiconductor elements flows through the metal electrode. The control wire connects respective control electrodes of the plurality of semiconductor elements in series, and intersects with a magnetic field which is generated when the main current flows through the metal electrode.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] This disclosure relates to a semiconductor device.

Background Art

[0002] Generally, when the switching of a plurality of semiconductor elements turns on, variations in source potential occur in the plurality of semiconductor elements due to the wiring structure. Such variations in source potential cause variations in the gate-source voltage in the plurality of semiconductor elements, so that the main current flowing when the switching is on may concentrate in any one of the plurality of semiconductor elements. As a result, there is a problem that the reliability of the semiconductor device decreases. Therefore, in Patent Document 1, a technique for generating an induced electromotive force in a gate wire has been proposed to reduce variations in the gate-source voltage.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the prior art, by adjusting the distance in a plan view between a gate wire and a path of a current that generates a magnetic field, and adjusting the magnitude of the induced electromotive force generated in the gate wire by the magnetic field, variations in the gate-source voltage in a plurality of semiconductor elements are reduced. However, for example, in the design of a semiconductor device, when it is required to make the above distance as equal as possible, the prior art has a problem that variations in the gate-source voltage cannot be reduced.

[0005] Therefore, in view of the above problems, the present disclosure has been made, and an object thereof is to provide a technique capable of reducing variations in the gate-source voltage in a plurality of semiconductor elements. [Means for solving the problem]

[0006] The semiconductor device according to this disclosure comprises a plurality of semiconductor elements, each having a control electrode for controlling a main current; metal electrodes through which the main current flows in the plurality of semiconductor elements; and a control wire connecting the control electrodes of each of the plurality of semiconductor elements in series and linking with the magnetic field generated when the main current flows through the metal electrodes. Based on the induced electromotive force that should be cumulatively applied to the control electrode of the semiconductor element by the magnetic field, the distance between the portion of the control wire corresponding to the induced electromotive force and the metal electrode is set. ru. [Effects of the Invention]

[0007] According to this disclosure, a control wire connecting the control electrodes of multiple semiconductor elements in series is provided so as to link with the magnetic field generated when the main current flows through the metal electrode. With such a configuration, variations in the gate-source voltage across multiple semiconductor elements can be reduced. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic top view showing the configuration of a semiconductor device according to Embodiment 1. [Figure 2] This is a schematic cross-sectional view showing the configuration of a semiconductor device according to Embodiment 1. [Figure 3] This is a schematic cross-sectional view showing the configuration of a semiconductor device according to Embodiment 1. [Figure 4] This is a schematic top view showing the configuration of a semiconductor device according to Embodiment 1. [Figure 5] This is a schematic diagram showing the variation in source potential and gate potential of each semiconductor element according to Embodiment 1. [Figure 6] This is a circuit diagram illustrating the induced electromotive force generated in each semiconductor device according to Embodiment 1. [Figure 7] This is a schematic diagram illustrating the induced electromotive force generated in each semiconductor device according to Embodiment 1. [Figure 8] This is a schematic top view diagram showing the configuration of a semiconductor device related to a modified example. [Figure 9]This is a schematic cross-sectional view showing the configuration of a semiconductor device according to a modified example. [Figure 10] This is a schematic cross-sectional view showing the configuration of a semiconductor device according to Embodiment 2. [Figure 11] This is a schematic cross-sectional view showing the configuration of a semiconductor device according to Embodiment 3. [Figure 12] This is a schematic top view showing the configuration of the semiconductor device according to Embodiment 4. [Figure 13] This is a schematic cross-sectional view showing the configuration of a semiconductor device according to Embodiment 5. [Modes for carrying out the invention]

[0009] The embodiments will be described below with reference to the attached drawings. The features described in each of the embodiments below are illustrative, and not all features are necessarily required. In addition, in the descriptions below, the same or similar reference numerals are used for similar components in multiple embodiments, and the different components will be described primarily. Also, in the descriptions below, specific positions and directions such as "top," "bottom," "left," "right," "front," or "back" do not necessarily have to coincide with the positions and directions in actual implementation.

[0010] <Embodiment 1> Figure 1 is a schematic top view showing the configuration of the semiconductor device according to this first embodiment. Figures 2 and 3 are schematic cross-sectional views along the dashed lines A-A' and B-B' in Figure 1, respectively. Figure 4 is a schematic top view showing a configuration with some parts removed from the configuration in Figure 1.

[0011] As shown in FIGS. 2 and 3, the semiconductor device according to Embodiment 1 includes a metal base plate 10, an insulating layer 30 provided with a copper pattern, a plurality of semiconductor elements 100, a source metal electrode 140, an electrode insulating layer 150, a drain metal electrode 160 which is a metal electrode, a source main terminal 170, and a drain main terminal 180. Further, as shown in FIG. 4, the semiconductor device according to Embodiment 1 includes a gate terminal 41, a source control terminal 71, a gate wire 110 which is a control wire, a source wire 120, and a source control wire 130.

[0012] As shown in FIGS. 2 and 3, a back-side copper pattern 20 is provided on the back side (the lower side in FIGS. 2 and 3) of the insulating layer 30, and a gate copper pattern 40, a source copper pattern 50, a drain copper pattern 60, and a source control copper pattern 70 are provided on the front side (the upper side in FIGS. 2 and 3) of the insulating layer 30. The material of the insulating layer 30 is, for example, ceramics or an epoxy resin, and the ceramics here includes, for example, at least any one of aluminum oxide, aluminum nitride, and silicon nitride. In this specification, for example, at least any one of A, B, C,..., and Z means any one of all combinations obtained by extracting one or more from the group of A, B, C,..., and Z.

[0013] As shown in FIGS. 2 and 3, the back-side copper pattern 20 is provided on the metal base plate 10. In the examples of FIGS. 2 and 3, the back-side copper pattern 20 is provided between the metal base plate 10 and the insulating layer 30, but instead of these, a resin-insulated copper base plate without the back-side copper pattern 20 and in which the metal base plate 10 and the insulating layer 30 are directly in contact may be used.

[0014] On the copper pattern 20 on the back side of the insulating layer 30 and on the drain copper pattern 60 on the opposite side, a plurality of semiconductor elements 100 are provided. The drain copper pattern 60 is electrically connected to drain electrodes provided under the plurality of semiconductor elements 100. In the first embodiment, the plurality of semiconductor elements 100 are semiconductor elements A, B, and C, but the number of the plurality of semiconductor elements 100 may be any plural number, and is not limited to three. In the following description, when the semiconductor elements A, B, and C are not distinguished, each of the semiconductor elements A, B, and C may also be denoted as the semiconductor element 100.

[0015] The material of the semiconductor element 100 may be, for example, silicon (Si), or may be silicon carbide (SiC) which is a wide bandgap semiconductor. That is, the semiconductor element 100 may be a Si semiconductor element or a SiC semiconductor element using these as a substrate material. Also, as the wide bandgap semiconductor, instead of silicon carbide, a gallium nitride (GaN) - based material, diamond, or the like may be used. When a wide bandgap semiconductor is used as the material of the semiconductor element 100, the allowable current density can be increased and the power loss can be decreased, so that miniaturization of a semiconductor device in which the semiconductor element 100 is used as a power semiconductor element becomes possible. The semiconductor element 100 may be, for example, a semiconductor element (switching element) for power control such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor) that controls a large current, or may be a combination of a semiconductor element for power control and a diode for commutation. The diode for commutation may be, for example, an SBD (Schottky Barrier Diode) or a PND (PN junction diode).

[0016] As shown in Figure 3, the drain metal electrode 160 has portions facing the multiple semiconductor elements 100, and the drain copper pattern 60 is connected to the drain metal electrode 160 by a drain metal electrode junction 80. As a result, the main current 190, which includes the drain current and source current of the multiple semiconductor elements 100, flows to the drain metal electrode 160. The drain metal electrode 160 is also connected to a drain main terminal 180, which is electrically connected to external wiring.

[0017] As shown in Figure 4, each of the multiple semiconductor elements 100 has a gate electrode 42, which is a control electrode for controlling the main current 190, and a source electrode. In the example in Figure 4, the source electrode is provided on the upper surface of the semiconductor element 100 other than the gate electrode 42 and is insulated from the gate electrode 42. The source electrode of each of the multiple semiconductor elements 100 is connected to the source copper pattern 50 via a source wire 120.

[0018] As shown in Figure 3, the source metal electrode 140 is provided on the drain metal electrode 160 via an electrode insulating layer 150, and the source copper pattern 50 in Figure 1 is connected to the source metal electrode 140 by a source metal electrode junction 90. As a result, the main current 190, which includes the drain current and source current of the multiple semiconductor elements 100, flows to the source metal electrode 140. The source metal electrode 140 is also connected to a source main terminal 170, which is electrically connected to external wiring.

[0019] The drain metal electrode 160 and the source metal electrode 140 are, for example, copper plate electrodes used for input and output of current and voltage. The drain metal electrode 160 and the source metal electrode 140 may be insert-molded into the case of a semiconductor device (not shown) or outsert-molded. In addition, a sealing member (not shown) may be provided between the drain metal electrode 160 and the plurality of semiconductor elements 100.

[0020] As shown in Figure 4, the source electrodes of each of the multiple semiconductor elements 100 are electrically connected to the source control terminal 71 via the source wire 120, source copper pattern 50, source control wire 130, and source control copper pattern 70.

[0021] Each gate electrode 42 of multiple semiconductor elements 100 is connected in series by a gate wire 110, and is electrically connected to the gate terminal 41 via the gate wire 110 and the gate copper pattern 40. Stitch bonding may be used for the connection between the gate electrode 42 and the gate wire 110, or other bonding methods may be used.

[0022] The semiconductor element 100 controls the voltage and current between the drain electrode and the source electrode by the voltage value of the gate signal input between the gate terminal 41 and the source control terminal 71. Therefore, with the semiconductor device configured as described above, it is possible to control the voltage and current between the drain main terminal 180 and the source main terminal 170 by the voltage value of the gate signal input between the gate terminal 41 and the source control terminal 71.

[0023] Here, the source control potential of each semiconductor element 100 varies with respect to an externally input source reference potential due to the position of the semiconductor element 100 relative to the drain copper pattern 60 and source copper pattern 50, the arrangement position of the source wire 120, and the path of the main current 190. As a result, variations in the gate-source voltage occur in multiple semiconductor elements 100, and when the switching of multiple semiconductor elements 100 is on, the main current 190 may concentrate in one of the multiple semiconductor elements 100.

[0024] In contrast, in this embodiment 1, the gate wire 110 is arranged to link with the magnetic field generated when the main current 190 flows through the drain metal electrode 160. In other words, the positional relationship between the gate wire 110 and the magnetic field generated when the main current 190 flows through the drain metal electrode 160 is similar to the positional relationship between the ring-shaped parts that are connected to each other in a general chain.

[0025] Here, for example, when the semiconductor element 100 is turned on in Figure 3, the main current 190 flows from the drain main terminal 180, the drain metal electrode 160, the drain metal electrode junction 80, the drain copper pattern 60, the semiconductor element 100, the source wire 120, the source copper pattern 50, the source metal electrode junction 90, and the source metal electrode 140 to the source main terminal 170. The gate wire 110 is positioned to link with the magnetic field generated when the main current 190 flows through the drain metal electrode 160, so when the main current 190 flows through the drain metal electrode 160, an induced electromotive force is generated in the gate wire 110 by the magnetic field.

[0026] As a result, an induced electromotive force is applied to the gate electrode 42, which can cause the gate potential input to each semiconductor element 100 from the outside to fluctuate. By making this fluctuation in gate potential correspond to the variation in source control potential relative to the source reference potential, i.e., the variation in source potential, as will be described later, the variation in the gate-source voltage of each semiconductor element 100 can be suppressed.

[0027] Furthermore, a magnetic field is also generated when the main current 190 flows through the source metal electrode 140. However, as shown in Figure 3, in a configuration where the drain metal electrode 160 is closer to the gate wire 110 than the source metal electrode 140, the magnetic field generated when the main current 190 flows through the drain metal electrode 160 becomes dominant.

[0028] Figure 5 is a schematic diagram showing the variation in source potential and gate potential of each semiconductor element A, B, and C. The source potentials Vsa, Vsb, and Vsc of semiconductor elements A, B, and C vary due to electromagnetic induction between the di / dt of the main current 190 flowing through the drain metal electrode 160 and the parasitic inductance of the source copper pattern 50. In the example in Figure 4, the connection between the source control wire 130 and the source copper pattern 50 is positioned closest to semiconductor element C, which is located on the drain metal electrode junction side 80 among semiconductor elements A, B, and C. In other words, the current path between the connection between the source control wire 130 and the source copper pattern 50 and the semiconductor element 100 becomes shorter in the order of semiconductor element A, semiconductor element B, and semiconductor element C, so Vsa > Vsb > Vsc.

[0029] If the gate wire 110 is not positioned to link with the magnetic field of the main current 190, the gate potential becomes a constant potential Vg. As a result, (Vg-Vsc)>(Vg-Vsb)>(Vg-Vsa), and the variation in gate-source voltage among multiple semiconductor elements 100 becomes relatively large.

[0030] Figures 6 and 7 are a circuit diagram and a schematic diagram illustrating the induced electromotive force generated in the semiconductor device according to this embodiment 1, respectively. As described above, in this embodiment 1, the gate wire 110 is arranged to link with the magnetic field of the main current 190. Therefore, due to electromagnetic induction between the di / dt of the main current 190 flowing through the drain metal electrode 160 and the parasitic inductance L110 of the gate wire 110, induced electromotive forces Ea, Eb, and Ec are generated at the three bumps of the gate wire 110 shown in Figure 3.

[0031] In the example in Figure 4, the gate electrodes 42a and 42 of semiconductor elements A, B, and C are shown. b ,42 c These are connected in series by gate wire 110. The gate copper pattern 40 is positioned closest to semiconductor element C, which is located on the drain metal electrode junction side 80 among semiconductor elements A, B, and C, and gate electrodes 42a, 42 b,42 c It is provided on the opposite side of the gate copper pattern 40 from the drain metal electrode junction 80. Therefore, an induced electromotive force Ec is applied to the gate electrode 42c, an induced electromotive force Eb,Ec is applied to the gate electrode 42b, and an induced electromotive force Ea,Eb,Ec is applied to the gate electrode 42a.

[0032] Therefore, as shown in Figure 5, the gate potentials Vga, Vgb, and Vgc of semiconductor elements A, B, and C can be varied such that Vga > Vgb > Vgc, corresponding to the variations in source potentials Vsa, Vsb, and Vsc. As a result, (Vga - Vsa) ≈ (Vgb - Vsb) ≈ (Vgc - Vsc), which suppresses variations in gate-source voltage across multiple semiconductor elements 100.

[0033] <Summary of Embodiment 1> In the semiconductor device according to this embodiment 1 described above, the gate wire 110 is provided so as to link with the magnetic field generated when the main current 190 flows through the drain metal electrode 160, by connecting the gate electrodes 42 of each of the multiple semiconductor elements 100 in series. With this configuration, variations in the gate-source voltage among the multiple semiconductor elements 100 can be suppressed, and thus the concentration of the main current 190 on any one of the multiple semiconductor elements 100 can be suppressed.

[0034] In conventional technology, the magnitude of the induced electromotive force (EMF) generated in a gate wire is adjusted by adjusting the distance in a plan view between the gate wire and the path of the current that generates the magnetic field of the induced EMF. However, when it is required to keep the above distance as equal as possible in the design of a semiconductor device, for example, conventional technology has the problem that it cannot reduce variations in the gate-source voltage.

[0035] In contrast, according to this embodiment 1, even when the distances between multiple semiconductor elements 100 and the main current 190 in a plan view are the same, variations in gate-source voltage can be reduced by adjusting the connection position between the gate wire 110 and the gate electrode 42 of the semiconductor element 100.

[0036] <Variation> Although the semiconductor device according to Embodiment 1 was described as a minimal 1-in-1 module, it may also have an expanded circuit configuration such as a 2-in-1 module or a 6-in-1 module.

[0037] Furthermore, in Embodiment 1, as shown in Figure 4, the connection portion between the source control wire 130 and the source copper pattern 50 and the gate copper pattern 40 are positioned closest to semiconductor element C, which is located on the drain metal electrode junction 80 side among semiconductor elements A, B, and C. However, as shown in Figures 8 and 9, the connection portion between the source control wire 130 and the source copper pattern 50 and the gate copper pattern 40 may be positioned closest to semiconductor element A, which is located on the opposite side of the drain metal electrode junction 80 among semiconductor elements A, B, and C. And gate electrodes 42a, 42 b ,42 c This may be provided on the drain metal electrode junction 80 side relative to the gate copper pattern 40. Even with this configuration, the same effects as in Embodiment 1 can be obtained.

[0038] Furthermore, in Embodiment 1, the drain metal electrode 160 was closer to the gate wire 110 than the source metal electrode 140, but the source metal electrode 140 may be closer to the gate wire 110 than the drain metal electrode 160. In this case, the gate wire 110 should be positioned so as to link with the magnetic field generated when the main current 190 flows through the source metal electrode 140. However, since the direction of the induced electromotive force is determined by the direction of the main current 190, the connection portion between the source control wire 130 and the source copper pattern 50, and the position of the gate copper pattern 40 are appropriately changed considering the direction in which the main current 190 flows through the source metal electrode 140.

[0039] <Embodiment 2> Figure 10 is a schematic cross-sectional view showing the configuration of the semiconductor device according to this second embodiment, and corresponds to Figure 2.

[0040] In Figure 2, the main current 190 is shown to flow through the center of the drain metal electrode 160, viewed from the direction in which the main current 190 flows through the drain metal electrode 160. However, as the switching frequency increases, the main current 190 concentrates at the edges of the drain metal electrode 160.

[0041] Therefore, in this embodiment 2, the gate wire 110 is provided near the end of the drain metal electrode 160 when viewed from the direction in which the main current 190 flows through the drain metal electrode 160. For example, the gate wire 110 may be provided closer to the end of the drain metal electrode 160 than the central part, or closer to the end of the drain metal electrode 160 than the parts other than the end.

[0042] As described above, the semiconductor device according to this second embodiment allows the gate wire 110 and the main current 190 at the drain metal electrode 160 to be brought closer together, thereby increasing the induced electromotive force generated in the gate wire 110.

[0043] <Embodiment 3> Figure 11 is a schematic cross-sectional view showing the configuration of a semiconductor device according to this third embodiment, and corresponds to Figure 3.

[0044] In this third embodiment, the distance between the portion of the gate wire 110 corresponding to the induced electromotive force and the drain metal electrode 160 is set based on the induced electromotive force that should be cumulatively applied to the gate electrode 42 of the semiconductor element 100 by the magnetic field.

[0045] In the example shown in Figure 11, in order to increase the induced electromotive force Ea that should be cumulatively applied to the gate electrode 42a of semiconductor element A, the distance between the portion of the gate wire 110 corresponding to the induced electromotive force Ea and the drain metal electrode 160 is relatively small Furthermore, in order to reduce the induced electromotive force Eb that should be cumulatively applied to the gate electrode 42b of semiconductor element B, the distance between the portion of the gate wire 110 corresponding to the induced electromotive force Eb and the drain metal electrode 160 is relatively Large It is.

[0046] According to the semiconductor device of this embodiment 3, the gate-source voltage in the semiconductor element 100 can be adjusted, thereby suppressing variations in the gate-source voltage among multiple semiconductor elements 100.

[0047] <Embodiment 4> Figure 12 is a schematic top view showing the configuration of the semiconductor device according to this fourth embodiment, and corresponds to Figure 4.

[0048] In this embodiment 4, the angle formed in a plan view between the direction of extension of the portion of the gate wire 110 corresponding to the induced electromotive force that should be cumulatively applied to the gate electrode 42 of the semiconductor element 100 by the magnetic field, and the direction of the main current 190 at the drain metal electrode 160 is set.

[0049] In the example shown in Figure 12, in order to reduce the induced electromotive force Ea that should be cumulatively applied to the gate electrode 42a of semiconductor element A, the angle between the direction of extension of the portion of the gate wire 110 corresponding to the induced electromotive force Ea and the direction of the main current 190 in a plan view is relatively large. Note that the portion of the gate wire 110 corresponding to the induced electromotive force Ea is the portion between semiconductor element A and semiconductor element B. Also, in order to increase the induced electromotive force Eb that should be cumulatively applied to the gate electrode 42b of semiconductor element B, the angle between the direction of extension of the portion of the gate wire 110 corresponding to the induced electromotive force Eb and the direction of the main current 190 in a plan view is relatively small. Note that the portion of the gate wire 110 corresponding to the induced electromotive force Eb is the portion between semiconductor element B and semiconductor element C.

[0050] According to the semiconductor device of this embodiment 4, the gate-source voltage in the semiconductor element 100 can be adjusted, thereby suppressing variations in the gate-source voltage among multiple semiconductor elements 100.

[0051] <Embodiment 5> Figure 13 is a schematic cross-sectional view showing the configuration of the semiconductor device according to this embodiment 5, and corresponds to Figure 3.

[0052] The configuration in Figure 13 is similar to the configuration in Figure 3, but with the addition of an insulating layer, the electrode element-side insulating layer 200. The electrode element-side insulating layer 200 is provided on the side of the drain metal electrode 160 that faces the gate wire 110.

[0053] According to the semiconductor device of this embodiment 5, the higher portion of the gate wire 110 can be positioned near the electrode element-side insulating layer 200, or in contact with the electrode element-side insulating layer 200. This brings the gate wire 110 closer to the main current 190 at the drain metal electrode 160, thereby increasing the induced electromotive force generated in the gate wire 110.

[0054] Furthermore, it is possible to freely combine each embodiment and each variation, and to modify or omit each embodiment and each variation as appropriate.

[0055] The various aspects of this disclosure are summarized below as an appendix.

[0056] (Note 1) Multiple semiconductor elements, each having a control electrode for controlling the main current, The metal electrodes through which the main current flows in the plurality of semiconductor elements, The control electrodes of each of the plurality of semiconductor elements are connected in series, and a control wire is linked with the magnetic field generated when the main current flows through the metal electrode. A semiconductor device equipped with the following features.

[0057] (Note 2) The semiconductor device according to Appendix 1, wherein the control wire is provided near the end of the metal electrode when viewed from the direction in which the main current flows through the metal electrode.

[0058] (Note 3) The semiconductor device according to Appendix 1 or Appendix 2, wherein the distance between the portion of the control wire corresponding to the induced electromotive force and the metal electrode is set based on the induced electromotive force that should be cumulatively applied to the control electrode of the semiconductor element by the magnetic field.

[0059] (Note 4) A semiconductor device according to any one of the appendices 1 to 3, wherein, based on the induced electromotive force to be cumulatively applied to the control electrode of the semiconductor element by the magnetic field, the angle formed in a plan view between the extending direction of the portion of the control wire corresponding to the induced electromotive force and the direction of the main current at the metal electrode is set.

[0060] (Note 5) A semiconductor device according to any one of the appendices 1 to 4, further comprising an insulating layer provided on the side of the metal electrode facing the control wire. [Explanation of Symbols]

[0061] 42 gate electrode, 100 semiconductor element, 110 gate wire, 160 drain metal electrode, 190 main current, 200 electrode element side insulating layer.

Claims

1. Multiple semiconductor elements, each having a control electrode for controlling the main current, The metal electrodes through which the main current flows in the plurality of semiconductor elements, The control electrodes of each of the plurality of semiconductor elements are connected in series, and a control wire is linked with the magnetic field generated when the main current flows through the metal electrode. Equipped with, A semiconductor device in which the distance between the portion of the control wire corresponding to the induced electromotive force and the metal electrode is set based on the induced electromotive force that should be cumulatively applied to the control electrode of the semiconductor element by the magnetic field.

2. Multiple semiconductor elements, each having a control electrode for controlling the main current, The metal electrodes through which the main current flows in the plurality of semiconductor elements, The control electrodes of each of the plurality of semiconductor elements are connected in series, and a control wire is linked with the magnetic field generated when the main current flows through the metal electrode. Equipped with, A semiconductor device in which, based on the induced electromotive force that should be cumulatively applied to the control electrode of the semiconductor element by the magnetic field, the angle formed in a plan view between the extending direction of the portion of the control wire corresponding to the induced electromotive force and the direction of the main current at the metal electrode is set.

3. A semiconductor device according to claim 1 or claim 2, A semiconductor device wherein the control wire is provided near the end of the metal electrode when viewed from the direction in which the main current flows through the metal electrode.

4. A semiconductor device according to claim 1 or claim 2, A semiconductor device further comprising an insulating layer provided on the side of the metal electrode facing the control wire.

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