Underfill vacuum process

Abstract

An electronic device is formed by applying an underfill material around a perimeter of an integrated circuit (IC) chip bonded to a support substrate. A void is present in the underfill material present between the IC chip and the support substrate. An opening is present through at least one of the IC chip and the support substrate in communication with the void. A vacuum may be applied to the void through the opening present through the IC chip to reduce a size of the void to a first volume. The opening present through the IC chip is sealed by a sealing plate. The underfill material is cured after sealing of the opening to reduce the void to at least a second volume less than the first volume.

Description

Technical Field

[0001] The present disclosure relates to solder joints between connectors and electrical (electronic) devices, and more particularly to an underfill process employed when forming solder joints.

Background Art

[0002] The use of underfill enables a structural bond between the chip and the substrate, effectively reducing shear stress, thereby reducing the applied strain in the solder joint. However, voids in the underfill may be formed during the underfill process. Voids in the underfill are defects that cause reliability problems. The presence of voids between solder bumps, i.e., solder balls of the solder joint, may cause solder pumping, which may result in an open circuit electrical short in a device including the underfill. Furthermore, voids may cause stress concentrations that result in crack formation or delamination.

[0003] Voidless underfilling has become even more difficult due to many trends in device manufacturing. For example, larger chips are more prone to void formation. Devices with finer pitches and narrower gaps between device features are also more likely to contain voids during the underfill process. In addition, complex devices such as those including direct bonded heterogeneous integration (DBHi) have been found to be highly likely to contain underfill voids. Considering the above, there is a need to provide a more uniform underfill process that eliminates void formation.

Summary of the Invention

[0004] In some embodiments, the methods, apparatus, and structures provided herein can provide a uniform, potentially void-free underfill material in a soldered device through a mechanism that can apply a vacuum during a process flow starting with underfill deposition and followed by underfill thermal curing.

[0005] In one embodiment, a method for manufacturing an electronic device is described, comprising dispensing an underfill material around the outer periphery of an integrated circuit (IC) chip coupled to a support substrate. Voids exist in the underfill material between the IC chip and the support substrate. An opening exists that communicates with the voids, through at least one of the IC chip and the support substrate. A vacuum can be applied to the voids through the openings that exist through the IC chip to reduce the size of the voids to a first volume. The openings that exist through the IC chip are sealed by a sealing plate. The underfill material is cured after sealing the openings to reduce the voids to at least a second volume smaller than the first volume.

[0006] In one embodiment, curing is continued until voids in the underfill material are completely removed.

[0007] In another embodiment, a method for manufacturing an electrical device includes coating an underfill material around the periphery of an integrated circuit (IC) chip coupled to a support substrate, wherein voids exist in the underfill material between the IC chip and the support substrate, and openings exist that communicate with the voids through at least one of the IC chip and the support substrate. The method further includes applying vacuum to the voids through the openings existing through the IC chip to reduce the size of the voids to a first volume, and sealing the openings with a sealing plate and at least one solder actuator. The at least one solder actuator includes at least one spring for moving the sealing plate. In some embodiments, the method further includes curing the underfill material after sealing the openings to reduce the voids to a second volume smaller than at least a first volume. The solder actuator does not include electrical connections for supplying power to a servo motor and has several advantages when used in a vacuum chamber.

[0008] In another embodiment, an apparatus is provided for removing voids from underfill material during the formation of an electrical device. In one embodiment, the apparatus for forming an electrical device includes a tray holder for housing an assembly of integrated circuits engaged to a support substrate by solder joints and underfill material. The tray holder includes an aperture for exposing at least one vacuum opening in the assembly. The apparatus for forming an electrical device may further include a sealing plate positioned to be inserted into the aperture, and at least one actuator connected to the tray holder and the sealing plate for moving the sealing plate to engage with at least one vacuum opening in the assembly.

[0009] In one embodiment, at least one actuator includes at least one guide pin connected to a tray fixing portion and a sealing plate, and a spring for moving the sealing plate through an aperture in the tray fixing portion. The at least one actuator further includes a spring retainer on at least one guide pin for connecting the spring to at least one guide pin, and a spring set bar on the tray fixing portion for connecting the spring to the tray fixing portion.

[0010] In some embodiments, the actuator does not require an electrical signal to actuate the sealing plate to engage with the vacuum opening in the assembly. In some embodiments, the actuator may be a solder actuator. The solder actuator can be configured such that a spring is compressed when the solder is in a solid state, causing the sealing plate to be separated from at least one vacuum opening. The solder actuator can also be configured such that a spring is relaxed when the solder is in a liquid state. When the solder is in a liquid state, the sealing plate is engaged with at least one vacuum opening.

[0011] In one example, an apparatus for forming an electrical device includes a tray holder for housing an assembly of integrated circuits engaged to a support substrate by solder joints and underfill material, the tray holder including an aperture for exposing at least one vacuum opening in the assembly. The apparatus may also include a sealing plate positioned to be inserted into the aperture, and a solder actuator connected to the tray holder and the sealing plate for moving the sealing plate to engage with at least one vacuum opening in the assembly.

[0012] In yet another embodiment, an electrical device is provided comprising an integrated circuit chip and a support substrate connected by soldering. A vacuum opening exists through at least one of the integrated circuit chip and the packaging substrate. In some embodiments, the space between the integrated circuit chip and the support substrate is filled with an underfill material, and the underfill material fills the vacuum opening.

[0013] The following detailed descriptions are provided as examples and are not intended to limit the disclosure to them, and are best understood in relation to the attached drawings, in which the same reference numbers refer to the same elements and parts. [Brief explanation of the drawing]

[0014] [Figure 1] This is a vertical cross-sectional view showing solder bonding of an integrated circuit (IC) chip to a support substrate and deposition of underfill material according to one embodiment of the present disclosure, wherein voids are present in the underfill. [Figure 2] This is a vertical cross-sectional view showing the flow in a vacuum chamber for drawing underfill material from the edge of an IC chip toward the central portion of the IC chip, according to one embodiment of the present disclosure, where the vacuum can be applied to voids in the underfill through slits / openings in the substrate of the IC chip. [Figure 3] Figure 2 is a plan view of an IC chip coupled to a support substrate after underfill material has been deposited and a vacuum has been applied. [Figure 4] This is a vertical cross-sectional view showing the slit / opening that passes through the IC substrate while the structure is in a vacuum. [Figure 5] Figure 4 is a vertical cross-sectional view of the structure shown, where the vacuum has been adjusted to atmospheric pressure and underfill hardening has been applied. [Figure 6] This is a plan view of the IC chip 5 coupled to the support substrate 15 after the slit / opening 24 has been closed, the pressure has been adjusted to atmospheric pressure, and high-temperature curing has been performed. [Figure 7]This is a vertical cross-sectional view of an apparatus for engaging a sealing plate with a slit / opening in a substrate of an IC chip, which may be a component of a tray or fixed part in a vacuum chamber, according to one embodiment of the present disclosure. [Figure 8] This is an enlarged vertical cross-sectional view of a first embodiment of a plate engaged with a slit / opening of an IC chip by a sealing engagement. [Figure 9] This is an enlarged vertical cross-sectional view of a second embodiment of a plate, including a ridge on the outer periphery and a centrally located trench, the plate being engaged with the slit / opening of the IC chip by a sealing engagement. [Figure 10] This is a vertical cross-sectional view of an actuator having a lock in the closed position according to one embodiment of the present disclosure. [Figure 11] This is a vertical cross-sectional view of an actuator having a lock in the open position according to one embodiment of the present disclosure. [Figure 12] This is a vertical cross-sectional view of an assembly of IC chips and a support substrate bonded to each other using solder bumps loaded into a tray fixing section, according to one embodiment of the present disclosure. [Figure 13] This is a vertical cross-sectional view of an assembly of IC chips and a support substrate bonded to each other using solder bumps loaded into a tray fixing section, according to one embodiment of the present disclosure. [Figure 14] This is a vertical cross-sectional view showing the rear and front housing assemblies, including the assembly of the IC chip and support substrate engaged with the retailing slot on the side wall of the tray fixing housing 46. [Figure 15] This is a vertical cross-sectional view showing one embodiment of the present disclosure, in which a spring lock bar is connected to the side of the tray fixing housing and an actuator and guide pin are engaged with the connecting plate linkage 26. [Figure 16]A vertical cross-sectional view showing the release of the locking to release the holding force on the guide pin to move the guide pin upward and to pull the plate to sealingly engage with the slit / hole, according to one embodiment of the present disclosure. [Figure 17] A vertical cross-sectional view showing a solder pin assembly that can provide a locking mechanism for relaxing a compressed spring to sealingly engage a plate with a slit / aperture, according to one embodiment of the present disclosure. [Figure 18] A vertical cross-sectional view showing melting of solder in the solder pin assembly shown in FIG. 17. [Figure 19] A plot showing one embodiment of the pressure and temperature distribution that provides for melting the solder for the solder pin design shown in FIGS. 17 and 18 at an appropriate timing with the sequence for sealing the slit / aperture, as described with respect to FIGS. 1-6. [Figure 20] A vertical cross-sectional view showing one embodiment of direct bonded heterogeneous integration (DBHi), where the underfill material is processed to provide an underfill that is completely void and void-free.

MODE FOR CARRYING OUT THE INVENTION

[0015] Detailed embodiments of the claimed structure and method are disclosed herein, but it should be understood that the disclosed embodiments are merely illustrative of the claimed structure and method, which may be embodied in various forms. In addition, each example shown in relation to the various embodiments is intended to be illustrative and not restrictive. Furthermore, the drawings are not necessarily to scale, and some features may be exaggerated to show details of certain components. Accordingly, the specific structural and functional details disclosed herein should not be construed as restrictive, but merely as representative principles to teach those skilled in the art how to use the methods and structures of this disclosure in various ways. For the purposes of the following description, the terms “upper,” “lower,” “right,” “left,” “vertical,” “horizontal,” “top,” “bottom,” and their derivatives refer to the disclosed embodiment as it is oriented in the drawings. The term “located on top” means that a first element, such as a first structure, is located on a second element, such as a second structure, and intervening elements, such as an interface structure, e.g., an interface layer, may be located between the first and second elements. The term "direct contact" means that a first element, such as a first structure, and a second element, such as a second structure, are connected at the interface between the two elements without any intermediate conductive, insulating, or semiconductor layer present.

[0016] The methods and structures described herein provide for forming underfill material on structures including electrical connections using solder joints, while minimizing or eliminating the formation of underfill voids. The methods and structures described herein can provide an underfill process without special tools and extra area for applying the underfill material. In some embodiments, the methods and structures of the disclosed herein use slits or holes, or both, formed in the substrate on which the solder joint is to be formed. In some embodiments in which the solder joint including the structure includes two substrates, the slits or holes, or both, may be formed in the upper or lower substrate, or in both the upper and lower substrates. In some embodiments, when forming the underfill, the underfill is applied to fill the gap between the substrates and form a fillet. The fillet is formed at atmospheric pressure. Fillet formation may be carried out at room temperature or high temperature, and fillet formation does not require a vacuum environment.

[0017] In the next step, the structure containing the underfill material fillets is placed in a vacuum chamber. A vacuum environment is applied before the slits or holes, or both, present in the substrate are filled with the underfill material. When the vacuum is applied, the underfill can flow and further fill the space between the two structures connected by solder joints placed between them. At this stage, the flow of the underfill material can be characterized as a capillary effect. In addition, during the vacuum application stage, the temperature can be increased to further assist the flow of the underfill material, which reduces the size of any voids.

[0018] In the next step, after the vacuum has been applied, the slit or hole, or both, is sealed. Once the slit or hole, or both, is sealed and any remaining voids are sealed, the applied vacuum may be released, and the pressure in the assembly can return to atmospheric pressure.

[0019] The underfill curing process may also be carried out in an atmospheric pressure or high pressure environment. During the underfill curing process, the size of voids may be further reduced, eliminated, or both. Apparatus is also provided that can provide the process sequence described above, including methods for reducing void formation, as well as the application of plates to seal the slits or holes, or both, after the application of vacuum.

[0020] The methods and structures of this disclosure will now be described in more detail with reference to Figures 1 to 20.

[0021] Figure 1 shows one embodiment of an integrated circuit (IC) chip 5 soldered to a support substrate 15 (also called a support carrier), such as a printed circuit board (PCB). An integrated circuit, or monolithic integrated circuit (also called an IC, chip, or microchip), is a set of electronic circuits on a single small, flat component (or "chip") of semiconductor material. The semiconductor material may be a group IV semiconductor such as silicon (Si), or a group III-V semiconductor material such as gallium arsenide (GaAs). A number of field-effect transistors (FETs), such as MOSFETs (metal-oxide-semiconductor field-effect transistors), can be incorporated into the chip. The type of semiconductor device, e.g., FETs, may include horizontally oriented devices, vertically oriented devices, fin-type field-effect transistors, nanowires, or nanosheet-channel-type devices or combinations thereof. Any field-effect transistor (FET), e.g., a gate structure including a channel that separates the source and drain regions, may be incorporated into the chip. The above examples of FET types are provided for illustrative purposes only and are not intended to limit you.

[0022] The printed circuit board (PCB) 15 includes electrical contact pads and paths for transmitting electrical signals to the IC chip 5 coupled to the electrical contact pads. The printed circuit board (PCB) 15 may be a metal core printed circuit board (MCPB). In some embodiments, other materials such as FR4 may also be used. Note that the support substrate 15 may be a semiconductor wafer, for example, another silicon substrate.

[0023] The electrical connection between the integrated circuit (IC) chip 5 and the support substrate 15 may be a solder-type connection, such as a solder bump 10 or a solder ball. Conventionally, solder bumps 10 (also called "solder balls"), such as C4 (Controlled Collapse Chip Connection) bumps, have been used to connect the chip to the chip carrier. As used herein, the term "solder" refers to any metal or metal compound or alloy that is melted and then cooled to join two or more metal surfaces. Multiple solder bumps 10 may consist of a metal suitable for soldering. For example, in some embodiments, the solder bumps 10 may consist of a tin-lead eutectic alloy or a lead-free solder composition. In some embodiments, the solder joint has a height in the range of 0.5 mm to 3 mm. In other examples, the solder bumps 10 have a height greater than 1 mm. In some embodiments, the array of solder bumps 10 may have a total area greater than 30 mm × 200 mm.

[0024] Generally, solder has a melting temperature in the range of 150°C to 250°C. Solder bumps may be small spheres of solder (solder balls) that are bonded to contact areas, interconnect lines, or pads of semiconductor devices. In some embodiments, solder bumps can be formed from lead-free solder mixtures or tin-lead solder.

[0025] An under-ball metal (UBM) is a solder-wetting terminal metal that defines the size and area of ​​the soldered connection between solder balls and the components to which the solder balls are arranged for electrical communication. The UBM restricts the flow of solder balls to a desired area. In some embodiments, the UBM provides adhesion and contact to chip wiring. In some examples, the UBM may include an adhesive layer, a barrier layer, and a conductive layer that use solder bumps to provide a path for interconnection between the back-end-of-line structure of the device and the electrical structure connected to the device back-end-of-line structure. The adhesive layer, barrier layer, and conductive layer provide a path for interconnection between the device and the chip. The adhesive layer can be a metal such as titanium (Ti) or an alloy of titanium (Ti) and tungsten (W). The barrier layer can consist of nickel (Ni). The main conductive layer is typically copper (Cu). A typical plated BLM layer may consist of a metal stack including sputtered Ti and W alloy layers, a sputtered Cu layer, a plated Ni layer, and a plated Cu layer. This process involves subtractive etching of a copper seed layer. In this process, a portion of the upper copper layer is etched by a wet etching process. If improved electromigration is required, a Cu layer is introduced beneath a 2-micron nickel layer to improve current distribution and reduce peak current density. The Cu layer is then plated first to a thickness of 10 microns, followed by a 2-micron Ni layer, and then the upper Cu layer.

[0026] Please note that the metals described above for the solder bumper 10 are provided for illustrative purposes only and are not intended to limit this disclosure to them.

[0027] Referring further to Figure 1, the underfill material 20 is shown as being applied to the outer periphery of the area on which the IC chip 5 is bonded to a support substrate 10 (also called a chip carrier), which may be a printed circuit board. The "underfill" is a composite material composed of an epoxy polymer containing a significant amount of filler. Additional components added to the underfill 20 formulation are flow agents, adhesion promoters, and dyes.

[0028] In some embodiments, the underfill 20 can be an epoxy-based resin. In some examples, the underfill 20 can be an epoxy resin containing a filler, an epoxy acrylic containing a filler, or a polymer containing a suitable filler. The underfill 20 is nonconductive. In some examples, suitable epoxy resin formulations for the underfill 20 may include high-purity diglycidyl ether of bisphenol F or diglycidyl ether of bisphenol A, along with high-performance or multi-functional resins such as diglycidyl ether of naphthalenediol or triepoxide of para-aminophenol. It should be noted that this is only an example of epoxy compositions that can be used as the underfill 20 of this disclosure. Other compositions and other epoxy-based resins are similarly suitable for the underfill 20.

[0029] The underfill 20 has a composition that reinforces the attachment of the IC chip 5 to the support substrate 15. The composition of the underfill 20 has dielectric properties and further electrically isolates the solder bumps 10 from each other.

[0030] As shown in Figure 1, the underfill 20 is applied around the outer periphery of the integrated circuit chip 5. The underfill 20 may be applied using an injection process, such as an inkjet type printing technique. The underfill 20 may be applied at atmospheric pressure.

[0031] The underfill 20 can be applied at room temperature.

[0032] In the example shown in Figure 1, the underfill 20 is present around the outer edge of the chip, but a recognizable void is located in the center between the IC chip 5 and the support substrate 15. In the example shown in Figure 1, the void extends from a first solder bump 10 on the first side of the IC chip 5 to a second solder bump 10 on the second side of the IC chip 5.

[0033] As will be described in more detail below, a process flow is provided in which a vacuum is applied to pull the underfill material 20 from the edges of the IC chip 5 toward the central portion of the IC chip in order to remove the void. A slit / opening 6 exists through the substrate of the IC chip 5 for the vacuum to be applied. As shown, the slit / opening 6 extends from the top surface of the IC chip 5 and penetrates the entire IC chip 5. In this example, the slit / opening 6 is centrally located with respect to the width of the IC chip and is therefore positioned to communicate with the void 7 in the underfill 20.

[0034] In some embodiments, the slit / opening 6 can be combined with a cavity structure. For example, the opening / slit 6 can be formed in a molded package or a fan-out wafer-level package. "Fan-out" packaging can be defined as any package with fan-out connections on the chip surface, enabling more external I / O. Fan-out packaging can use epoxy molding material to completely embed the die rather than placing the die on a substrate or interposer. Fan-out packaging may include dicing a chip on a silicon wafer, then placing the chip on a thin "reconstructed" or carrier wafer / panel, then forming a redistribution layer (RDL) on top of the molded area (chip and fan-out area) after it has been molded, and then forming a solder ball on top.

[0035] Si chips are sometimes already incorporated into molded packages or fan-out wafer-level packages before being mounted on a laminate. In such cases, the slits / apertures 6 can be formed in the molded package or fan-out wafer-level package instead of on the silicon chip (IC chip 5) or the laminate (e.g., support substrate 5).

[0036] Void 7 is an air gap. By applying a vacuum through the slit / opening, the air gap is evacuated, which draws the underfill material 20 from the edge of the IC chip towards the central portion of the IC chip 5.

[0037] Figure 2 shows the flow in a vacuum chamber where the underfill material 20 is drawn in from the edge of the IC chip 5 toward the central portion of the IC chip 5. As shown, the substantially circular cross-sectional shape of the underfill material 20 on the outer circumference of the IC chip 5 is altered by the vacuum drawing. As shown by the comparison of void 7 before vacuum application in Figure 1 and void 7' during vacuum application in Figure 2, the void is evacuated and the size of the void is reduced by drawing the underfill material 20 toward the central portion of the IC chip 5. The vacuum chamber is a rigid enclosure from which air and other gases are removed by a vacuum pump. This results in a low-pressure environment within the chamber, commonly referred to as a vacuum. For comparison, atmospheric pressure is approximately 760 Torr. In some embodiments, the application of vacuum produces a low vacuum in the range of 760 Torr to 25 Torr. In some embodiments, the application of vacuum produces a low vacuum in the range of 25 to 1 × 10⁻⁶. -3 An intermediate vacuum in the Torr range is created, which can draw the underfill material 20 from the edges of the IC chip 5 toward the central portion of the IC chip 5. In some embodiments, the application of the vacuum is 1 × 10 -3 Torr~1×10 -9A high vacuum (hard) in the Torr range is generated, and this high vacuum can pull the underfill material 20 from the edges of the IC chip 5 toward the central portion of the IC chip 5. In some embodiments, the application of the vacuum is an ultra-high vacuum of 1 × 10⁻¹⁰ -9 ~1 × 10 -12 Torr is generated, and this ultra-high vacuum can pull the underfill material 20 from the edges of the IC chip 5 toward the central portion of the IC chip 5. In one example, an intermediate vacuum is preferred.

[0038] The flow of the underfill material 20 can be further enhanced by capillary action. In addition, the temperature inside the vacuum chamber may be increased. For example, if the room temperature is in the range of 20°C to 25°C, the increased temperature to increase the flow of the underfill material in the vacuum environment may be in the range of 70°C to 130°C. Furnace elements may be present in the vacuum chamber to provide the temperature increase.

[0039] Figure 3 is a plan view of the IC chip 5 coupled to the support substrate 15 after the underfill material 20 has been deposited and a vacuum has been applied. The underfill material has an outer circumference identified by reference numeral 21 and an inner circumference indicated by reference numeral 22. Voids are present in the region indicated within the inner circumference, indicated by reference numeral 23. Slits / openings are indicated by reference numeral 24. Although the slits / openings 24 are shown as elliptical, they may also be circular. Only one slit / opening 24 is shown, but it should be noted that the present invention is not limited to this example. Multiple openings may be present for the application of a vacuum.

[0040] Figure 4 shows at least one hole or slit 24 that is sealed and closed by a plate 25 that seals the hole / slit in the presence of a vacuum. The plate 25 may include a plug or sealing element made of PTFE, adhesive, rubber, rigid-oriented material, or a combination thereof. The plate 25 can be embedded in a tray or fixed assembly within a vacuum chamber. After sealing the slit / opening 24, the environment is changed from vacuum to atmospheric pressure, which is approximately 760 Torr.

[0041] Figure 5 shows one embodiment of the cured structure. The underfill curing process is carried out in an atmospheric or high-pressure environment. In some embodiments, curing is carried out at temperatures typically between 130°C and 160°C, although "snap-cure" can cure in seconds. Atmospheric pressure is approximately 760 Torr. In some embodiments, high-pressure curing involves pressures ranging from 1520 to 7600 Torr. Curing time may be less than a few minutes, and in some cases, a few seconds.

[0042] The steps of closing the slit / opening 24, adjusting the pressure to atmospheric pressure, and performing high-temperature curing of the underfill 30 further fill the voids present between the IC chip 5 and the support substrate 10. Figure 6 is a plan view of the IC chip 5 coupled to the support substrate 15 after closing the slit / opening 24, adjusting the pressure to atmospheric pressure, and performing high-temperature curing. Referring to Figures 5 and 6, the underfill material completely fills the voids that were present in the region shown inside the inner edge indicated by reference numeral 23 in Figure 3.

[0043] Figure 7 is a vertical cross-sectional view of an apparatus for engaging a sealing plate 25 with a slit / opening 24 in the substrate of an IC chip 5, which is a tray or fixing component in a vacuum chamber for the steps of applying vacuum as described with reference to Figure 2 and then sealing the slit / opening 24 as described with reference to Figure 4.

[0044] The plate 25 can be moved upward or downward along the Z-axis. The plate 25 may be a component of a plate assembly 35 made of a metal base material. The plate assembly 35 may include a plurality of plates 25, each corresponding to an IC chip housed in a tray fixing part 40. The plates 25 may be connected by a connecting plate linkage 26, and each plate 25 may be located on a support 27 that connects the plates 25 to the connecting plate linkage 26.

[0045] Figures 8 and 9 show enlarged views of plates 25 engaged to seal the slit / opening 24 of the IC chip 5. Each plate 25 may include a base 28 made of metal. In the embodiment shown in Figure 8, the sealing member of the plate 25 may include a silicone adhesive layer 29 and a polytetrafluoroethylene sheet 30. In the embodiment shown in Figure 9, the base 28 may include a ridge on the outer periphery and a trench located in the center. The sealing member for sealing the slit / opening 24 may include a porous silicone rubber structure 32 located within the trench of the base 28 and a porous PTFE sheet 31 located on the silicone rubber structure 32. The assembly of the porous PTFE sheet 31 and the porous silicone rubber structure 32 can engage with and seal the slit / opening 24 of the IC chip. A silicone adhesive O-ring 33 may be located on the ridge of the base 28. The silicone adhesive O-ring 33 can contact the portion of the IC chip substrate surrounding the slit / opening 24 when the slit / opening is sealed by the assembly of the porous PTFE sheet 31 and the porous silicone rubber structure 32. Note that the sealing structure of the plate 25 described with reference to Figures 8 and 9 illustrates some embodiments of the present disclosure. The present disclosure is not intended to be limited to these examples. The plate structure may include sufficient space for gas release, etc.

[0046] The tray fixing portion 40 can accommodate an assembly of an IC chip 5 coupled to a support substrate 15 during a process sequence for removing voids from the underfill material 20 present with the solder bumps 10. In some embodiments, the IC chip 5 may be located between a rear housing indicated by reference numeral 43 and a front housing indicated by reference numeral 42. The front housing 42 has an opening that penetrates the front housing 42, through which a plate 25 can move to engage with a slit / opening 24 during a process sequence for removing voids from the underfill 20. The assembly of the front housing 42 and the rear housing 43 may be engaged with an actuation structure including a spring set bar 54 (not shown in Figure 7) and a spring lock bar 41. The interaction between the spring set bar 54 and the spring lock bar 41 is described in further detail with reference to Figures 10 and 11.

[0047] The sample, i.e., the IC chip 5, is housed in the tray fixing section 40. The plate 25 is guided along the Z-axis by guide pins 34 to engage with the sample at a fixed position within the tray fixing section 26, for example, between the front housing 42 and the rear housing 43. The tray fixing section 26 is mounted inside the vacuum chamber. The ends of the guide pins 34 include an actuator 50. The actuator 50 can be an electrically or temperature-triggered actuator 50. As shown in Figures 10 and 11, the actuator 50 can employ a spring-pin design, in which case the lock 53 is switched from a closed to an open position to actuate the plate 25 when sealing the slit / opening 24. An electrical or temperature signal is used to switch the lock 53 from the closed to an open position. Figure 10 shows the actuator 50 with the lock 53 in the closed position. In this position, the plate 25 does not seal the hole / opening 24. Figure 11 shows the actuator 50 with the lock in the open position. At this position, plate 25 seals the hole / opening 24.

[0048] Figure 10 shows one embodiment of a spring pin actuator 50, which includes a spring 51 positioned between a spring set bar 54 and a spring retainer 52 on a guide pin 34. The spring 51 may be a bimetallic spring. The guide pin 34 passes through a hole in the spring set bar 54 and is in a sliding relationship with the spring set bar 54. The spring retainer 52 is in a fixed position on the guide pin 34. The end of the guide pin 34 extends through an opening in the spring lock bar 41. In Figure 10, the end of the guide pin 34 is housed within the spring lock bar 41 and is held in place by a spring lock 53 in the closed position, so that the spring 51 is compressed. The opposite end of the guide pin 34 is connected to a connecting plate linkage 26. In the position shown in Figure 10, the spring 51 is compressed, the connecting plate linkage 26 is extended to its maximum extent, and the plate 25 is positioned away from the slit / opening 24. This is consistent with the plate arrangement in Figure 2 while a vacuum is applied to the structure, including the underfill 20 where the void 7 is located. By applying a vacuum, the size of the void shown in Figure 2 is reduced compared to Figure 1.

[0049] In Figure 11, the lock 53 of the actuator 50 is moved to the open position. In this position, the end of the guide pin 34 is not pressed down by the spring lock bar 41. Under these circumstances, the force that held the spring 51 in the relaxed position is released. The spring 51 relaxes from its compressed state. The relaxation of the spring 51 applies an upward force to the spring retainer 52 of the guide pin 34, moving the guide pin 34 upward along the Z-axis. The guide pin 34, attached to the connecting plate linkage 26, pulls the plate 25 to engage with the slit / opening 24 in a sealing manner. This is consistent with the arrangement of the plate in Figures 4 and 5, during which a vacuum is still applied to the structure and a curing temperature is applied while the slit / hole 24 is sealed. The curing reduces the size of the void as shown in Figure 5, compared to Figure 2.

[0050] Figures 12 to 18 show one embodiment using the exemplary tray fixing section 40 in the manner described with reference to Figures 1 to 6. Referring first to Figure 12, an assembly of the IC chip 5 and support substrate 15, joined together using solder bumps 10, is first loaded into the tray fixing section 40. At this stage of the process flow, the underfill 20 is positioned around the outer circumference of the IC chip 5, but substantial voids 7 may exist in the space between the solder bumps 10, the IC chip 5, and the support substrate. Slits / openings 34 may exist through the substrate of the IC chip 5 and may communicate with the gaps of the voids 7. The rear housing 43 may be in contact with the support substrate 15, while the front housing 42 is in contact with the IC chip side of the assembly of the IC chip 5 and support substrate 15. The front housing 42 may include an opening that penetrates the front housing 42, through which the plate 25 can move to engage with the slit / opening 24 during a process sequence for removing voids from the underfill 20. Openings for guide pins 34 and actuators 50, which are to be positioned later, are also present.

[0051] Figure 13 shows the tray fixing housing 46 located inside the vacuum chamber. At the base of the tray fixing housing 46, the plate 25 and the connecting plate linkage 26 assembly are located, and on the opposite side of the tray fixing housing 45, the spring set bar 54 is located.

[0052] Figure 14 shows the assemblies of the rear housing 43 and the front housing 42, including the assembly of the IC chip 5 and the support substrate 15, which are engaged with the retailing slot on the side wall of the tray fixing housing 46. The assemblies of the rear housing 43 and the front housing 42, including the assembly of the IC chip 5 and the support substrate, are located between the spring set bar 54 and the assembly of the plate 25 and the connecting plate linkage 26.

[0053] Figure 15 shows connecting the spring lock bar 41 to the side of the tray fixing housing 46 opposite to the position of the plate 25 and connecting plate linkage 26 assembly. At this point, the spring 51 may be in a relaxed state. To compress the spring 51, force may be applied to the end of the guide pin 34 opposite to the side engaged with the connecting plate linkage 26. Compressing the spring 51 and engaging the lock 53 provides that the plate 25 is separated from the slit / opening 24, as shown. The position of the plate 25 relative to the slit / opening 24 is consistent with the application of vacuum described with reference to Figure 2. As described above with reference to Figure 2, the application of vacuum reduces the size of the void 7' in the underfill 20 compared to the size of the void before the application of vacuum, as shown in Figure 1.

[0054] Figure 16 shows one embodiment of releasing the lock 53. Releasing the lock 53 releases the retaining force in the guide pin 34. Releasing the retaining force in the guide pin 34 relaxes (decompresses) the spring, which causes the guide pin 34 to move upward along the Z direction in Figure 16. The end of the guide pin 34 opposite to the end in which the retaining lock 53 may engage is connected to a connecting plate linkage 26. The connecting plate linkage 26 is connected to a plate 25. Releasing the lock 53 relaxes the spring, providing a force to pull the connecting plate linkage 26 upward along the Z direction, and this force pulls the plate 25 to engage with the slit / hole 24 in a sealing manner. This is consistent with the arrangement of the plates in Figures 4 and 5, during which a vacuum is still applied to the structure and a curing temperature is applied while the slit / hole 24 is being sealed.

[0055] The actuator for the lock 53 may be electrically or temperature-triggered. In some scenarios, the vacuum chamber may not have electrical wiring inside the chamber. In this example, an actuator that does not rely on electrical signals or servo ports may be provided for using the lock 53.

[0056] Referring to Figures 17 and 18, in some embodiments, the solder pin assembly 60 can provide a locking mechanism that releases a compressed spring 51 and causes the plate 25 to engage in a sealing manner with the slit / opening 24. The solder pin assembly 60 may include a solder retaining housing 61 and a solder ball 62. The solder pin assembly 60 may be used in place of the lock 53 shown in Figures 10 and 11, and in Figures 15 and 16. The solder retaining housing 61 is located on the spring lock bar 41 and overlaps the end of the guide pin 34 that is held to compress the spring 51. The solder 62 is located on the end of the guide pin 34 and is enclosed within the solder retaining housing 61. In the solder pin example, the solder pin 60 is used to release the spring lock by using a temperature trigger (higher than the melting temperature of the solder 62) instead of an electrical signal. The solder 62 may have any of the compositions of the types of solder described above in order to provide the solder bump 10.

[0057] When the temperature is below the melting point of the solder 62, the solder is in a solid state, which keeps the spring 51 compressed when pressed between the rear wall of the solder holding housing 61 and the upper surface of the guide pin 34. By compressing the spring 51, the plate 25 is separated from the slit / opening 24, as shown in Figure 17. The position of the plate 25 relative to the slit / opening 24 is consistent with the application of vacuum described with reference to Figure 2. As described above with reference to Figure 2, the application of vacuum reduces the size of the void 7' in the underfill 20 compared to the size of the void before the application of vacuum, as shown in Figure 1.

[0058] As the temperature rises to the melting point of the solder 61, the solder 61 is melted, and the spring 51 releases the tray so that the plate 25 seals the vacuum holes, such as the slits / openings 24, in the substrate 5.

[0059] Figure 19 shows the pressure and temperature profiles for melting the solder 61 at the appropriate timing with respect to the sequence for sealing the slit / opening as described with reference to Figures 1 to 6. Plot line 71 is the pressure profile. Plot line 72 is the temperature profile. For example, the intersection of the line at which the void is closed, indicated by reference no. 74, and the line at which the solder 61 melts, indicated by reference no. 75, indicates the temperature and pressure for melting the solder 61. The temperatures and pressures shown in Figure 19 are suitable for at least one embodiment in which the plate 25 is triggered to seal the slit / opening 24 as shown in Figure 4 for the method sequence described with reference to Figures 1 to 6.

[0060] It should be noted that the methods and apparatus described herein are applicable to any electrical device containing underfill material, for example, a device that uses solder joints to provide electrical communication between two structures, where the solder joints are insulated and mechanically reinforced by a dielectric underfill.

[0061] Figure 20 shows one embodiment of a direct-bonded heterogeneous integration (DBHi) structure in which the underfill material 20 is treated as described with reference to Figures 1 to 19 to provide a completely void- and gap-free underfill. The first integrated circuit (IC) chip 5 may consist of a semiconductor substrate, such as a Group IV semiconductor, e.g., silicon, or a Group III-V semiconductor, such as GaAs. The first integrated circuit (IC) chip 5 may include a plurality of doped regions and gate structures to provide any number of field-effect transistors. The first integrated circuit (IC) chip 5 may also include passive electrical devices such as capacitors and resistors. The support substrate 15 may be a printed circuit board (PCB). The support substrate 15 may be a multilayer structure, e.g., a polymer, and may have a plurality of electrical paths in which it exists. In another example, the support substrate 15 may consist of glass. In yet another example, the support substrate may be another semiconductor material, such as a Group IV semiconductor, e.g., silicon, or a Group III-V semiconductor, such as GaAs. To provide electrical communication between the support substrate 15 and the first integrated circuit (IC) chip 5, solder bumps 10 may be present between them, making direct electrical contact with the electrical path of the first IC chip 5 and the support substrate 15. The solder bumps 10 bond the first IC chip 5 and the support substrate 15 to each other, i.e., they are molten metal connections.

[0062] In the embodiment shown in Figure 20, a second integrated circuit chip (IC chip) 80 is located between the first IC chip and a support substrate. The second integrated circuit chip 80 may be a bridge chip. The bridge chip may consist of a semiconductor substrate such as a Group IV semiconductor, e.g., silicon, or a Group III-V semiconductor, GaAs. The bridge chip may include a plurality of doped regions and gate structures to provide any number of field-effect transistors. The bridge chip may also include passive electrical devices such as capacitors and resistors.

[0063] To provide electrical communication between the bridge chip (second integrated circuit (IC) chip 80) and the first integrated circuit (IC) chip 5, solder bumps 81 may be present between them and in direct electrical contact with the electrical paths of the first IC chip 5 and the bridge chip (second integrated circuit (IC) chip 80). Solder bumps 10 connect the first IC chip 5 and the bridge chip (second integrated circuit (IC) chip 80) to each other, i.e., molten metal connection, to enable electrical communication.

[0064] An underfill material 20 is present, which separates the solder bumps 10 from each other and provides structural rigidity to the bonded connections of the numerous chips and substrates shown in Figure 20. The underfill material 20 completely fills the space between adjacent solder joints 10 and completely fills the space between the support substrate 15 and the first integrated circuit (IC) chip 5. As shown, the underfill material 20 completely fills the space between the support substrate 15 and the second integrated circuit (IC) chip 80, for example, a bridge chip. The underfill material 20 is completely free of voids.

[0065] To ensure that the underfill material 20 is completely void-free, a vacuum and curing method is applied to the structure using the method described with reference to Figures 1 to 19. For vacuum application, a slit / opening 24 is present through at least one of the first IC chip 5 and the support substrate 15. Although only one hole 24 is shown, it should be noted that this disclosure is not limited to this example, and any number of holes or slits or both may be present, as long as their number and shape allow for vacuum application and sealing using the plate structure 25 (described with reference to Figures 1 to 19) and enable permanent sealing by the underfill material, as shown in Figure 20.

[0066] Note that Figure 20 shows a plate 25 sealing the opening / slit 24. This is for illustrative purposes only. In the final device structure, plate 25 is not present. In some examples, a ball grid array (BGA) or other surface mount structure may be present in the location of plate 25 in Figure 20.

[0067] Although the slit / opening 24 is shown in Figure 20 as existing across the entire width of the support substrate 15, it should be noted that the methods and structures of this disclosure are not limited to this example. For example, Figures 1 to 6 show that the slit / opening is formed through the IC chip 15. The slit / opening 24 can be formed using an etching process.

[0068] The methods and structures disclosed herein provide that the slit / opening 24 is also filled with an underfill material 20. The underfill material 20 may fill the entire slit / opening 24, which is one distinguishing feature of the structures disclosed herein compared to conventional devices using an underfill material. In some embodiments, by being completely filled with the underfill material 20, the slit / opening 24 in the final device structure is completely free of voids or gaps or both.

[0069] The composition of the underfill material 20 shown in Figure 20 is described above with reference to Figures 1 to 19. Therefore, the description of the underfill material 20 described with reference to Figures 1 to 19 is equally applicable to the underfill composition of the underfill material shown in Figure 20 and identified by the same reference number, i.e., "20".

[0070] While the methods and structures of this disclosure for underfill vacuum processes are shown and described in particular with respect to their preferred embodiments, it will be understood by those skilled in the art that such and other modifications in form and detail may be made without departing from the spirit and scope of this disclosure. Accordingly, this disclosure is not intended to be limited to the described and illustrated forms and details themselves, but rather to be included within the scope of the appended claims.

Claims

1. A method for manufacturing electronic devices, The process involves applying an underfill material around the outer periphery of an integrated circuit (IC) chip bonded to a support substrate, wherein voids exist in the underfill material between the IC chip and the support substrate, and openings exist that communicate with the voids through at least one of the IC chip and the support substrate. Applying a vacuum to the void through the aforementioned opening, The opening is sealed with a sealing plate, The underfill material is cured after the opening is sealed. A method for manufacturing electronic devices, including [a specific component].

2. The method according to claim 1, wherein the voids in the underfill material are reduced to a first volume by applying the vacuum, and then reduced to a second volume smaller than the first volume by curing.

3. The method according to claim 1, wherein the sealing of the opening with the sealing plate is performed under the application of a vacuum.

4. The method according to claim 1, wherein the vacuum is in the range of 10 Pa to 2000 Pa.

5. The method according to claim 1, wherein the curing is performed at a temperature in the range of 80°C to 120°C.

6. The method according to claim 1, wherein the curing is performed at atmospheric pressure while the opening remains sealed.

7. The method according to claim 1, wherein the underfill material fills the opening.

8. A method for manufacturing electronic devices, The process involves applying an underfill material around the outer periphery of an integrated circuit (IC) chip bonded to a support substrate, wherein voids exist in the underfill material between the IC chip and the support substrate, and openings exist that communicate with the voids through at least one of the IC chip and the support substrate. Applying a vacuum to the void through the opening that exists through the IC chip, The sealing of the opening by a sealing plate and at least one solder actuator, wherein the at least one solder actuator includes at least one spring for moving the sealing plate, The underfill material is cured after the opening is sealed. A method for manufacturing electronic devices, including [a specific component].

9. The method according to claim 8, wherein the spring is compressed when the solder of the solder actuator is in a solid state and the sealing plate is separated from the opening, and the spring is relaxed when the solder is in a liquid state and the sealing plate is engaged with the opening.

10. Apparatus for manufacturing electrical devices, A tray fixing portion for housing an assembly of integrated circuits engaged to a support substrate by solder joints and underfill material, wherein the tray fixing portion includes an aperture to expose at least one vacuum opening in the assembly, A sealing plate positioned to be inserted into the aperture, To move the sealing plate so as to engage with the at least one vacuum opening in the assembly, the tray fixing part and at least one actuator connected to the sealing plate and An apparatus for manufacturing electrical devices, equipped with the necessary components.

11. The apparatus according to claim 10, wherein the at least one actuator comprises at least one guide pin connected to the tray fixing portion and the sealing plate, and a spring for moving the sealing plate through the aperture in the tray fixing portion.

12. The apparatus according to claim 10, wherein the at least one actuator further includes a spring retainer on the at least one guide pin for connecting the spring to the at least one guide pin, and a spring set bar on the tray fixing portion for connecting the spring to the tray fixing portion.

13. The apparatus according to claim 10, wherein the actuator includes an electrically triggered servo motor.

14. Apparatus for manufacturing electrical devices, A tray fixing portion for housing an assembly of integrated circuits engaged to a support substrate by solder joints and underfill material, wherein the tray fixing portion includes an aperture to expose at least one vacuum opening in the assembly, A sealing plate positioned to be inserted into the aperture, A solder actuator connected to the tray fixing portion and the sealing plate moves the sealing plate to engage with the at least one vacuum opening in the assembly. An apparatus for manufacturing electrical devices, equipped with the necessary components.

15. The apparatus according to claim 14, wherein the solder actuator comprises at least one guide pin connected to the tray fixing portion and the sealing plate, and a spring for moving the sealing plate through the aperture in the tray fixing portion.

16. The apparatus according to claim 15, wherein the solder actuator further includes a spring retainer on the at least one guide pin for connecting the spring to the at least one guide pin, and a spring set bar on the tray fixing portion for connecting the spring to the tray fixing portion.

17. The apparatus according to claim 16, wherein the spring is compressed when the solder of the solder actuator is in a solid state and the sealing plate is separated from the at least one vacuum opening, and the spring is relaxed when the solder is in a liquid state and the sealing plate is engaged with the at least one vacuum opening.

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