Semiconductor device and method for manufacturing the same

Abstract

To provide a semiconductor device that improves RRSOA without increasing a recovery loss.SOLUTION: A transistor and a diode are formed on a common semiconductor substrate. The semiconductor substrate has a transistor region and a diode region. The diode region includes: a first semiconductor layer of a first conductivity type provided on a second main surface side of the semiconductor substrate; a second semiconductor layer of the first conductivity type provided on the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on a first main surface side of the semiconductor substrate relative to the second semiconductor layer; a first main electrode applying a first potential to the diode; a second main electrode applying a second potential to the diode; a plurality of diode trench gates reaching the second semiconductor layer from the first main surface of the semiconductor substrate; and a contact region provided in an upper layer part of the third semiconductor layer. The contact region is formed of a conductor material embedded in a concave part provided in the third semiconductor layer.SELECTED DRAWING: Figure 2

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