Substrate processing equipment

Abstract

To provide a substrate processing device with which it is possible to suppress a reduction in the uniformity of processing, even when air bubbles are supplied while a lid is immersed in a process liquid.SOLUTION: A substrate W is immersed in a process liquid that is stored in a processing tank 10 and subjected to surface treatment. During the treatment of the substrate W, air bubbles are discharged from a plurality of air bubble supply tubes 51 into the process liquid. An upper opening of the processing tank 10 is covered with a first lid 81 and a second lid 82. A punching plate 85 having had a plurality of holes opened is attached to the underside of the first lid 81, and a punching plate 86 having had a plurality of holes opened is attached to the underside of the second lid 82 also. Air bubbles having reached the interface between the process liquid and the punching plates 85, 86 are ejected from the holes to the outside of the processing tank 10 by way of a path 91. The air bubbles are kept from remaining stagnant on liquid surface, and contact between the air bubbles and the substrate W is prevented, making it possible to suppress a reduction in the uniformity of processing.SELECTED DRAWING: Figure 11

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus that performs surface processing such as etching on a substrate with a processing liquid. Substrates to be processed include, for example, semiconductor substrates, substrates for liquid crystal display devices, substrates for flat panel displays (FPDs), substrates for optical disks, substrates for magnetic disks, or substrates for solar cells.

Background Art

[0002] Conventionally, in the manufacturing process of semiconductor devices, substrate processing apparatuses that perform various processes on substrates such as semiconductor substrates have been used. As one such substrate processing apparatus, a batch-type substrate processing apparatus is known in which a processing liquid is stored in a processing tank and a plurality of substrates are collectively immersed in the processing liquid to perform washing, etching, or the like.

[0003] Patent Document 1 discloses providing a processing liquid discharge portion that discharges a processing liquid below a plurality of substrates held by a substrate holding portion in a processing tank and a bubble supply portion that supplies bubbles. By supplying bubbles into the processing liquid in addition to discharging the processing liquid, the flow rate of the processing liquid in the processing tank increases, and the efficiency of surface processing of the substrate improves.

[0004] In particular, in the etching process of polysilicon using tetramethylammonium hydroxide (TMAH), it has been studied to control the etching rate by replacing dissolved oxygen in the liquid with nitrogen by supplying nitrogen gas bubbles into the processing liquid. In order to increase the etching rate and improve throughput, it is required to constantly supply nitrogen gas bubbles to reduce the dissolved oxygen concentration in the processing liquid to the limit.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

[0006] In etching processes using TMAH, it has been considered to install a lid (cover) on the processing tank and immerse a portion of the lid in the surface of the processing solution in order to prevent oxygen from dissolving into the processing solution due to the atmosphere. However, if nitrogen gas bubbles are continuously supplied while a portion of the lid is immersed in the surface of the processing solution, nitrogen gas bubbles accumulate at the interface between the lid and the processing solution and come into contact with the upper edge of the substrate. This causes the contact area to not be etched, resulting in a decrease in the in-plane uniformity of the etching process.

[0007] The present invention has been made in view of the above problems, and aims to provide a substrate processing apparatus that can suppress a decrease in processing uniformity even when bubbles are supplied while the lid is immersed in the processing liquid. [Means for solving the problem]

[0008] To solve the above problems, the invention of claim 1 provides a substrate processing apparatus for performing surface treatment on a substrate with a processing liquid, comprising: a processing tank for storing the processing liquid; a processing liquid supply unit for supplying the processing liquid into the processing tank; a substrate holding unit for holding the substrate and immersing the substrate in the processing liquid stored in the processing tank; a tubular bubble supply pipe disposed inside the processing tank and supplying bubbles to the processing liquid stored in the processing tank from below the substrate held by the substrate holding unit; a lid covering the upper opening of the processing tank; and a perforated plate with a plurality of holes attached to the lower side of the lid at a predetermined distance from the lower surface of the lid. A channel is formed between the perforated plate and the lower surface of the lid to discharge the bubbles supplied from the bubble supply pipe. It is characterized by the following:

[0009] Furthermore, the invention of claim 2 is, A substrate processing apparatus for performing surface treatment on a substrate using a processing liquid comprises: a processing tank for storing the processing liquid; a processing liquid supply unit for supplying the processing liquid into the processing tank; a substrate holding unit for holding the substrate and immersing the substrate in the processing liquid stored in the processing tank; a tubular bubble supply pipe disposed inside the processing tank and supplying bubbles to the processing liquid stored in the processing tank from below the substrate held by the substrate holding unit; a lid covering the upper opening of the processing tank; and a perforated plate with multiple holes attached to the underside of the lid at a predetermined distance from the underside of the lid. The punching plate is characterized in that the density of holes provided at the periphery is higher than the density of holes provided at the center.

[0010] Furthermore, the invention of claim 3 is, A substrate processing apparatus for performing surface treatment on a substrate using a processing liquid comprises: a processing tank for storing the processing liquid; a processing liquid supply unit for supplying the processing liquid into the processing tank; a substrate holding unit for holding the substrate and immersing the substrate in the processing liquid stored in the processing tank; a tubular bubble supply pipe disposed inside the processing tank and supplying bubbles to the processing liquid stored in the processing tank from below the substrate held by the substrate holding unit; a lid covering the upper opening of the processing tank; and a perforated plate with multiple holes attached to the underside of the lid at a predetermined distance from the underside of the lid.The device is further characterized by comprising a suction unit that draws gas from a flow path formed between the lid and the perforated plate.

[0011] Furthermore, the invention of claim 4 is characterized in that, in the substrate processing apparatus according to the invention of claim 3, it further comprises an air supply unit that supplies gas to the flow path formed between the lid and the punching plate.

[0013] Furthermore, the invention of claim 5 is a substrate processing apparatus for performing surface treatment on a substrate with a processing liquid, comprising: a processing tank for storing the processing liquid; a processing liquid supply unit for supplying the processing liquid into the processing tank; a substrate holding unit for holding the substrate and immersing the substrate in the processing liquid stored in the processing tank; a tubular bubble supply pipe disposed inside the processing tank and supplying bubbles to the processing liquid stored in the processing tank from below the substrate held by the substrate holding unit; a lid covering the upper opening of the processing tank; and a perforated plate with a plurality of holes attached to the lower side of the lid at a predetermined distance from the lower surface of the lid. The lid is characterized by having multiple exhaust holes. Furthermore, the invention of claim 6 is a substrate processing apparatus for performing surface treatment on a substrate with a processing liquid, comprising: a processing tank for storing the processing liquid; a processing liquid supply unit for supplying the processing liquid into the processing tank; a substrate holding unit for holding the substrate and immersing the substrate in the processing liquid stored in the processing tank; a tubular bubble supply pipe disposed inside the processing tank and supplying bubbles to the processing liquid stored in the processing tank from below the substrate held by the substrate holding unit; a lid for covering the upper opening of the processing tank; and a perforated plate with a plurality of holes attached to the lower side of the lid at a predetermined distance from the lower surface of the lid, wherein the perforated plate covers the liquid surface of the processing liquid stored in the processing tank. Furthermore, the invention of claim 7 is characterized in that, in a substrate processing apparatus according to any one of the inventions of claims 1 to 6, the plurality of holes are provided with tapered surfaces in which the hole diameter decreases as it moves upward. [Effects of the Invention]

[0014] Claims 1 to Claims 7 According to this invention, a perforated plate with multiple holes spaced at predetermined intervals from the underside of the lid is attached to the underside of the lid. As a result, bubbles supplied into the processing liquid from the bubble supply pipe are discharged through the holes in the perforated plate, and even when bubbles are supplied with the lid immersed in the processing liquid, a decrease in processing uniformity can be suppressed.

[0015] In particular, according to the invention of claim 3, since it is equipped with a suction unit that sucks gas from a channel formed between the lid and the perforated plate, air bubbles can be sucked more smoothly through the holes in the perforated plate.

[0016] In particular, claims 7 According to this invention, multiple holes are provided with tapered surfaces where the hole diameter decreases towards the top, allowing air bubbles to be guided along the tapered surfaces and discharged more smoothly from the holes in the punching plate. [Brief explanation of the drawing]

[0017] [Figure 1] This is a schematic plan view showing the overall configuration of the substrate processing apparatus according to the present invention. [Figure 2] This figure shows the configuration of the processing unit of the substrate processing device. [Figure 3]This is a diagram showing the state where the lifter has risen. [Figure 4] This is a diagram showing the state where the lifter has descended. [Figure 5] This is a diagram of the nozzle, dispersion plate, and rectifying plate as seen from the bottom of the treatment tank. [Figure 6] This is a plan view of the processing unit of the substrate processing apparatus of FIG. 1 as seen from above. [Figure 7] This is a side view of the processing unit of the substrate processing apparatus of FIG. 1 as seen from the side. [Figure 8] This is a diagram showing the state where the first lid and the second lid are closed. [Figure 9] This is a diagram showing the state where the first lid and the second lid are open. [Figure 10] This is a plan view showing the punching plate. [Figure 11] This is a diagram showing the processing of the substrate in the processing unit of the substrate processing apparatus of FIG. 1. [Figure 12] This is a diagram showing the main part configuration of the processing unit of the second embodiment. [Figure 13] This is a plan view showing the punching plate of the third embodiment. [Figure 14] This is a partial cross-sectional view of the punching plate of the fourth embodiment. [Figure 15] This is a diagram showing the configuration of the lid portion and the punching plate of the fifth embodiment.

Embodiments for Carrying Out the Invention

[0018] Embodiments of the present invention will be described in detail below with reference to the drawings. In the following, expressions indicating relative or absolute positional relationships (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) shall, unless otherwise specified, not only strictly represent the positional relationship but also represent a state in which there is a relative displacement in terms of angle or distance within a tolerance or a range in which a similar level of function can be obtained. Similarly, expressions indicating equality (e.g., "identical," "equal," "homogeneous," etc.) shall, unless otherwise specified, not only represent a state in which there is a quantitatively strictly equal state but also represent a state in which there is a difference in which a tolerance or a similar level of function can be obtained. Furthermore, expressions indicating shape (e.g., "circular," "square," "cylindrical," etc.) shall, unless otherwise specified, not only strictly represent the geometrically precise shape but also represent a shape within a range in which a similar level of effect can be obtained, and may have, for example, irregularities or chamfers. Additionally, expressions such as "equipped," "possessing," "containing," "having," etc., for a component are not exclusive expressions that exclude the existence of other components. Furthermore, the expression "at least one of A, B, and C" includes "A only," "B only," "C only," "any two of A, B, and C," and "all of A, B, and C."

[0019] <First Embodiment> Figure 1 is a schematic plan view showing the overall configuration of the substrate processing apparatus 100 according to the present invention. The substrate processing apparatus 100 is a batch-type substrate processing apparatus that performs surface treatment on multiple substrates W at once using a processing solution. The substrates to be processed are circular silicon semiconductor substrates. In Figure 1 and subsequent figures, the dimensions and number of parts are exaggerated or simplified as necessary for ease of understanding. In addition, in Figure 1 and subsequent figures, an XYZ Cartesian coordinate system is appropriately attached, with the Z-axis direction being the vertical direction and the XY plane being the horizontal plane, to clarify their directional relationships.

[0020] The substrate processing apparatus 100 mainly comprises a load port 110, an loading / unloading robot 140, a posture changing mechanism 150, a pusher 160, a main transport robot 180, a substrate processing group 120, a transfer cassette 170, and a control unit 70.

[0021] The load port 110 is located at the end of the substrate processing apparatus 100, which is formed in a roughly rectangular shape in plan view. A carrier C, which holds multiple substrates (hereinafter simply referred to as "substrates") W to be processed by the substrate processing apparatus 100, is placed on the load port 110. Carriers C containing unprocessed substrates W are transported by automated guided vehicles (AGVs, OHTs, etc.) and placed on the load port 110. Carriers C containing processed substrates W are also removed from the load port 110 by automated guided vehicles.

[0022] Carrier C is typically a front-opening unified pod (FOUP) that houses substrates W in a sealed space. Carrier C holds multiple substrates W in a horizontal orientation (orientation with the normal aligned with the vertical direction) stacked at regular intervals in the vertical direction (Z direction) using multiple holding shelves formed inside. The maximum number of substrates that can be housed in carrier C is 25 or 50. In addition to FOUP, carrier C may also take the form of an SMIF (Standard Mechanical Interface) pod or an open cassette (OC) that exposes the stored substrates W to the outside air.

[0023] A pod opener (not shown) and the like are provided at the boundary between the main body of the substrate processing device 100 and the load port 110. The pod opener opens and closes the front cover of the carrier C placed on the load port 110.

[0024] The loading / unloading robot 140 loads unprocessed substrates W from the carrier C, which is placed on the load port 110, into the main body of the substrate processing apparatus 100, and loads processed substrates W from the main body of the substrate processing apparatus 100 into the carrier C, with the carrier C's lid open. More specifically, the loading / unloading robot 140 transports multiple substrates W between the carrier C and the attitude changing mechanism 150. The loading / unloading robot 140 is configured to rotate in a horizontal plane and is equipped with batch hands (not shown) that can move forward and backward, each of which is made up of multiple stacked hand elements, each capable of holding one substrate W.

[0025] The attitude changing mechanism 150 rotates the multiple circuit boards W received from the loading / unloading robot 140 by 90° around the X-axis, changing the orientation of the circuit boards W from a horizontal orientation to an upright orientation (an orientation in which the normal vector is aligned with the horizontal direction). In addition, the attitude changing mechanism 150 changes the orientation of the circuit boards W from an upright orientation to a horizontal orientation before handing them over to the loading / unloading robot 140.

[0026] The pusher 160 is positioned between the attitude changing mechanism 150 and the transfer cassette 170. The pusher 160 transfers the upright substrate W between the attitude changing mechanism 150 and the lifting stage (not shown) provided on the transfer cassette 170.

[0027] The transfer cassette 170 and the substrate processing group 120 are arranged in a line along the X direction. The substrate processing group 120 comprises five processing units 121, 122, 123, 124, and 125. Processing units 121 to 125 are the main parts of the substrate processing apparatus 100 that perform various surface treatments on the substrate W. As shown in Figure 1, within the substrate processing apparatus 100, processing units 121, 122, 123, 124, and 125 are arranged in that order from the (+X) side. Each of the processing units 121, 122, 123, and 124 is equipped with a processing tank 10 for storing processing liquid.

[0028] Processing units 121 and 123 each store the same or different chemical solutions and immerse multiple substrates W in the solution at once to perform chemical treatment such as etching. Processing units 122 and 124 each store a rinsing solution (typically pure water) and immerse multiple substrates W in the rinsing solution at once to perform rinsing.

[0029] In the substrate processing unit group 120, processing unit 121 and processing unit 122 are paired, and processing unit 123 and processing unit 124 are paired. A dedicated transport mechanism, a lifter 20, is provided for the pair of processing unit 121 and processing unit 122. The lifter 20 is movable along the X direction between processing unit 121 and processing unit 122. Furthermore, the lifter 20 is movable up and down for each of processing unit 121 and processing unit 122. Similarly, a dedicated transport mechanism, a lifter 20, is provided for the pair of processing unit 123 and processing unit 124.

[0030] The lifter 20 holds multiple substrates W received from the main transport robot 180 and immerses the substrates W in the chemical solution stored in the processing tank 10 of the processing unit 121. After the chemical treatment is complete, the lifter 20 lifts the substrates W from the processing unit 121 and transfers them to the processing unit 122, where the substrates W are immersed in the rinsing solution stored in the processing tank of the processing unit 122. After the rinsing treatment is complete, the lifter 20 lifts the substrates W from the processing unit 122 and hands them over to the main transport robot 180. The same operation of the lifter 20 is performed in processing units 123 and 124.

[0031] The processing unit 125 includes a mechanism for reducing the pressure inside a sealed drying chamber to below atmospheric pressure, a mechanism for supplying an organic solvent (e.g., isopropyl alcohol (IPA)) into the drying chamber, and a lifter 20. The processing unit 125 places the substrate W received from the main transport robot 180 by the lifter 20 into the drying chamber, and dries the substrate W by supplying the organic solvent to the substrate W while maintaining a reduced pressure atmosphere inside the drying chamber. After the drying process, the substrate W is transferred to the main transport robot 180 via the lifter 20.

[0032] The transfer cassette 170 is positioned below the main transport robot 180 in its standby position (the position of the main transport robot 180 in Figure 1). The transfer cassette 170 includes a lifting stage (not shown). This lifting stage raises the substrate W received from the pusher 160 in an upright position and hands it over to the main transport robot 180. The lifting stage also lowers the substrate W received from the main transport robot 180 and hands it over to the pusher 160.

[0033] The main transport robot 180 is configured to slide along the X direction, as shown by arrow AR1 in Figure 1. The main transport robot 180 transports the substrate W between a standby position above the transfer cassette 170 and a processing position above any of the processing units 121, 122, 123, 124, or 125.

[0034] The main transport robot 180 is equipped with a pair of substrate chucks 181 that grip multiple substrates W at once. The main transport robot 180 can grip multiple substrates W at once by narrowing the distance between the pair of substrate chucks 181, and can release the gripping state by widening the distance between the substrate chucks 181. With this configuration, the main transport robot 1 8 Unit 0 can transfer the substrate W to the lifting stage of the transfer cassette 170, and can also transfer the substrate W to each lifter 20 provided in the substrate processing unit 120.

[0035] Next, the configuration of the processing unit 121 provided in the substrate processing apparatus 100 will be described. Here, the processing unit 121 will be described, but the processing unit 123 has a similar configuration. Figure 2 is a diagram showing the configuration of the processing unit 121. As shown in Figure 2, the processing unit 121 mainly comprises a processing tank 10 for storing processing liquid, a lifter 20 that holds multiple substrates W and moves up and down, a processing liquid supply unit 30 for supplying processing liquid into the processing tank 10, a drainage unit 40 for discharging processing liquid from the processing tank 10, a bubble supply unit 50 for supplying bubbles into the processing liquid stored in the processing tank 10, and a lid unit 80 for opening and closing the upper opening of the processing tank 10.

[0036] The treatment tank 10 is a storage container made of a chemical-resistant material such as quartz. The treatment tank 10 has a double-tank structure including an inner tank 11 that stores the treatment liquid and immerses the substrate W inside, and an outer tank 12 formed on the outer circumference of the upper end of the inner tank 11. The inner tank 11 and the outer tank 12 each have an upper opening that opens upward. The height of the upper edge of the outer tank 12 is slightly higher than the height of the upper edge of the inner tank 11. When the treatment liquid is stored up to the upper end of the inner tank 11 and more treatment liquid is supplied from the treatment liquid supply unit 30, the treatment liquid overflows from the top of the inner tank 11 into the outer tank 12. The treatment tank 10 of this embodiment is a liquid-saving specification that reduces the amount of treatment liquid used, and the capacity of the inner tank 11 is relatively small.

[0037] In this specification, "processing solution" is a conceptual term that includes various chemical solutions and pure water. Chemical solutions include, for example, solutions for etching or solutions for removing particles, and specifically, TMAH (tetramethylammonium hydroxide), SC-1 solution (a mixed solution of ammonium hydroxide, hydrogen peroxide, and pure water), SC-2 solution (a mixed solution of hydrochloric acid, hydrogen peroxide, and pure water), or phosphoric acid. Chemical solutions also include those diluted with pure water. In this embodiment, a mixed solution of TMAH, IPA (isopropyl alcohol), and pure water is used as the processing solution.

[0038] The lifter 20 is a transport mechanism for transporting substrates W vertically while holding them. The lifter 20 has a back plate 22 extending vertically (Z direction) and three holding rods 21 extending horizontally (Y direction) from the lower end of the back plate 22. The lower end of the back plate 22 is formed in a V shape. Each of the three holding rods 21 extending from the lower end of the back plate 22 has multiple (for example, 50) holding grooves engraved at a predetermined pitch. Multiple substrates W are held in an upright position on the three holding rods 21, parallel to each other and spaced at predetermined intervals, with their respective peripheral edges fitted into the holding grooves.

[0039] Furthermore, the lifter 20 is connected to a drive mechanism 24 conceptually shown in Figure 2 and moves up and down. Figures 3 and 4 show the up and down movement of the lifter 20. When the drive mechanism 24 is operated with the lid 80 open, the lifter 20 moves up and down, and the substrate W held by the lifter 20 moves up and down between an immersion position inside the processing tank 10 (position in Figure 4) and a lifted position above the processing tank 10 (position in Figure 3), as shown by the arrow AR21 in Figure 2. When the substrate W is lowered to the immersion position with the processing liquid stored in the processing tank 10, the substrate W is immersed in the processing liquid and surface treatment is performed. In other words, during processing, the lifter 20 functions as a substrate holder that holds the substrate W and immerses the substrate W in the processing liquid stored in the processing tank 10.

[0040] Returning to Figure 2, the processing liquid supply unit 30 comprises a nozzle 31 and a piping system for supplying the processing liquid to it. The nozzle 31 is located at the bottom of the inner tank 11 of the processing tank 10. A dispersion plate 15 is provided directly above the nozzle 31, facing the nozzle 31. Furthermore, a flow straightening plate 17 is provided above the dispersion plate 15.

[0041] Figure 5 is a view of the nozzle 31, dispersion plate 15, and flow straightening plate 17 from the bottom of the processing tank 10. The tip portion of the piping 32 of the processing liquid supply unit 30 (the portion extending into the processing tank 10) constitutes piping 132. Multiple nozzles 31 are formed on the upper side of piping 132. Each nozzle 31 is connected in communication with piping 132. A dispersion plate 15 is provided above each of the multiple nozzles 31. The dispersion plate 15 is a disc-shaped member provided parallel to the horizontal plane. The nozzles 31 protrude vertically upward from piping 132 toward the dispersion plate 15. Further above the dispersion plate 15, a flow straightening plate 17 is provided across the entire horizontal cross-section of the inner tank 11. Multiple processing liquid holes 17a are drilled across the entire surface of the flow straightening plate 17.

[0042] The processing liquid supplied to the piping 132 is discharged from the nozzle 31 towards the dispersion plate 15 directly above it. When the processing liquid is discharged upward from the nozzle 31 while the processing liquid is stored in the processing tank 10, the flow of the processing liquid strikes the dispersion plate 15, dispersing the liquid pressure and causing the processing liquid to spread horizontally along the surface of the dispersion plate 15. The processing liquid that has spread horizontally by the dispersion plate 15 then rises from the multiple processing liquid holes 17a of the flow straightening plate 17, forming a laminar flow in the processing tank 10 that moves from bottom to top. In other words, the flow straightening plate 17 forms a laminar flow of processing liquid in the processing tank 10.

[0043] Returning to Figure 2, the piping system that supplies the processing liquid to the nozzle 31 is configured with a pump 33, heater 34, filter 35, flow control valve 36, and valve 37 in piping 32. The pump 33, heater 34, filter 35, flow control valve 36, and valve 37 are arranged in this order from upstream to downstream (from the outer tank 12 to the inner tank 11) in piping 32.

[0044] The tip of pipe 32 extends into the processing tank 10 to form pipe 132 (Figure 5), and the base end of pipe 32 is connected to the outer tank 12. Pipe 32 guides the processing liquid that has flowed out of the outer tank 12 back into the inner tank 11. In other words, the processing liquid supply unit 30 circulates the processing liquid in the processing tank 10. Pump 33 discharges the processing liquid from the outer tank 12 into pipe 32 and sends the processing liquid to nozzle 31. Heater 34 heats the processing liquid flowing through pipe 32. When phosphoric acid or the like is used as the processing liquid, the heating unit 34 heats the processing liquid, and the heated processing liquid is stored in the processing tank 10.

[0045] The filter 35 filters the processing liquid flowing through the piping 32 to remove impurities and other contaminants. The flow rate adjustment valve 36 adjusts the flow rate of the processing liquid flowing through the piping 32. The valve 37 opens and closes the flow path of the piping 32. By operating the pump 33 and opening the valve 37, the processing liquid discharged from the outer tank 12 flows through the piping 32 and is supplied to the nozzle 31, and its flow rate is controlled by the flow rate adjustment valve 36.

[0046] The drainage section 40 includes a pipe 41 and a valve 45. The leading end of the pipe 41 is connected to the bottom wall of the inner tank 11 of the processing tank 10. A valve 45 is provided along the path of the pipe 41. The base end of the pipe 41 is connected to the drainage equipment of the factory where the substrate processing apparatus 1 is installed. When the valve 45 is opened, the processing liquid stored in the inner tank 11 is rapidly discharged from the bottom of the inner tank 11 into the pipe 41 and processed by the drainage equipment.

[0047] The treatment liquid supply unit 30 circulates the treatment liquid in the treatment tank 10. However, if the treatment liquid becomes insufficient due to drainage by the drainage unit 40, for example, new treatment liquid is supplied to the treatment tank 10 from a new liquid supply mechanism (not shown). Specifically, the new liquid supply mechanism includes a chemical liquid supply unit that supplies chemical liquid to the outer tank 12 or inner tank 11, and a pure water supply unit that supplies pure water. The chemical liquid is diluted as the chemical liquid supply unit supplies chemical liquid to the treatment tank 10 and the pure water supply unit supplies pure water.

[0048] The bubble supply unit 50 comprises a plurality of bubble supply pipes 51 (six in this embodiment) and a piping system for supplying gas to them. The six bubble supply pipes 51 are positioned inside the inner tank 11 of the processing tank 10, above the rectifier plate 17 and below the substrate W which is held in the immersion position by the lifter 20.

[0049] Each of the six bubble supply tubes 51 is a long, cylindrical member with a row of bubble holes (not shown) along its upper side. The bubble supply tubes 51 are made of a material that has chemical resistance to the processing liquid, such as PFA (perfluoroalkoxyalkane), PEEK (polyetheretherketone), or quartz (PFA is used in this embodiment).

[0050] The piping system for supplying gas to the six bubble supply pipes 51 includes pipes 52, a gas supply mechanism 53, and a gas supply source 54. The tip end of one pipe 52 is connected to each of the six bubble supply pipes 51. The base end of the pipes 52 is connected to the gas supply source 54. A gas supply mechanism 53 is provided for each of the pipes 52. In other words, one gas supply mechanism 53 is provided for each of the six bubble supply pipes 51. The gas supply source 54 delivers gas to each pipe 52. The gas supply mechanism 53 includes a mass flow controller and on / off valves (not shown), and supplies gas to the bubble supply pipes 51 via the pipes 52 and adjusts the flow rate of the supplied gas.

[0051] When gas is supplied to the six bubble supply pipes 51, each bubble supply pipe 51 discharges the gas into the processing liquid stored in the processing tank 10. When gas is supplied to the processing liquid from the six bubble supply pipes 51 while the processing liquid is stored in the processing tank 10, the gas rises in the processing liquid as bubbles. The gas supplied by the bubble supply unit 50 is, for example, an inert gas. This inert gas is, for example, nitrogen or argon (in this embodiment, nitrogen is used).

[0052] Furthermore, each of the multiple bubble holes provided in each bubble supply pipe 51 is positioned between adjacent substrates W held by the lifter 20. Therefore, bubbles formed by the discharge of gas from the multiple bubble holes formed in each bubble supply pipe 51 will rise between adjacent substrates W.

[0053] The lid 80 opens and closes the upper opening of the processing tank 10. When the lid 80 is closed, it covers the upper opening of the processing tank 10. When the lid 80 is open, the upper opening of the processing tank 10 is opened, and the lifter 20 can raise and lower the substrate W between the immersion position and the lifting position.

[0054] Figure 6 is a plan view of the processing unit 121 seen from above. Figure 7 is a side view of the processing unit 121 seen from the side. The lid 80 has a first lid 81 and a second lid 82. Both the first lid 81 and the second lid 82 are made of PTFE (polytetrafluoroethylene), a type of fluororesin with excellent chemical resistance. When the lid 80 is closed, the entire upper part of the inner tank 11 is covered by both the first lid 81 and the second lid 82. In addition, the first lid 81 and the second lid 82 cover the upper part of a portion of the outer tank 12. The remaining part of the outer tank 12 (a portion on the (+Y) side) is covered by the outer tank cover 14.

[0055] The first cover 81 is connected to the first opening / closing mechanism 83, conceptually shown in Figure 6. Similarly, the second cover 82 is connected to the second opening / closing mechanism 84. The first opening / closing mechanism 83 and the second opening / closing mechanism 84 are composed of, for example, air cylinders. The first cover 81 and the second cover 82 each open and close around a rotation axis along the Y-axis direction, as shown by the first opening / closing mechanism 83 and the second opening / closing mechanism 84, respectively, as indicated by arrow AR22 in Figure 2.

[0056] Figure 8 shows the state in which the first lid 81 and the second lid 82 are closed. Figure 9 shows the state in which the first lid 81 and the second lid 82 are open. Elements such as the bubble supply pipe 51 and the nozzle 31 are omitted in Figures 8 and 9. As shown in Figure 8, when the first lid 81 and the second lid 82 are closed, the processing liquid stored in the processing tank 10 is isolated from the external atmosphere by the first lid 81 and the second lid 82, and the dissolution of oxygen into the processing liquid is suppressed. On the other hand, as shown in Figure 9, when the first lid 81 and the second lid 82 are open, the processing liquid stored in the processing tank 10 comes into contact with the external atmosphere, and the substrate W can be raised and lowered.

[0057] Furthermore, a perforated plate 85 is attached to the lower surface of the first lid 81 that covers the inner tank 11. A perforated plate 86 is attached to the lower surface of the second lid 82 that covers the inner tank 11. Figure 10 is a plan view showing the perforated plates 85 and 86. Figure 10 is a view of the lid portion 80 from below ((-Z) side). The perforated plates 85 and 86 may be made of the same material as the first lid 81 and the second lid 82, for example. Multiple holes 87 are drilled through the perforated plate 85 from top to bottom. Similarly, multiple holes 88 are drilled through the perforated plate 86 from top to bottom. The holes 87 and 88 in the first embodiment are cylindrical in shape. The diameter of the holes 87 and 88 is 5 mm or more and 10 mm or less. In the first embodiment, multiple holes 87 and 88 are provided at a uniform density within the respective surfaces of the perforated plates 85 and 86.

[0058] Furthermore, as shown in Figure 8, the perforated plates 85 and 86 are attached to the underside of the lid portion 80 at a predetermined distance from the lower surfaces of the first lid 81 and the second lid 82. Specifically, for example, the perforated plates 85 and 86 can be attached to the lower surfaces of the first lid 81 and the second lid 82 by screwing them in with spacers of a predetermined size. This creates a gap of a predetermined distance between the first lid 81 and the second lid 82 and the perforated plates 85 and 86. This gap functions as a fluid passage 91. In other words, by attaching the perforated plates 85 and 86 to the first lid 81 and the second lid 82 at a predetermined distance, a fluid passage 91 of a predetermined width is formed between the perforated plates 85 and 86 and the first lid 81 and the second lid 82. The fluid passage 91 is in communication with the multiple holes 87 and 88.

[0059] In the first embodiment, the flow path 91 is configured to be sucked by a suction unit 93. For example, a vacuum pump can be used as the suction unit 93. By the suction unit 93 sucking gas from the flow path 91, the pressure inside the flow path 91 can be reduced to a negative pressure. Since the first cover 81 and the second cover 82 open and close, the piping connecting the flow path 91 and the suction unit 93 is made of a flexible resin material. Also, in the first embodiment, the suction unit 93 performs suction from one side of the flow path 91.

[0060] When the first lid 81 and the second lid 82 are closed, the lower surfaces of the perforated plates 85 and 86 are submerged in the liquid surface of the processing liquid stored in the processing tank 10. This significantly reduces the amount of air between the perforated plates 85 and 86 and the liquid surface of the processing liquid, and prevents the processing liquid from coming into direct contact with the air.

[0061] Furthermore, as shown in Figure 8, when the first lid 81 and the second lid 82 are closed, a gap is formed between the upper end of the inner tank 11 and the first lid 81 and the second lid 82. Through this gap, the processing liquid overflows from the inner tank 11 to the outer tank 12, and gas also flows out.

[0062] Furthermore, when the first lid 81 and the second lid 82 are closed, a gap is formed between the tip of the first lid 81 (the (+X) side end) and the tip of the second lid 82 (the (-X) side end). In other words, when the first lid 81 and the second lid 82 are closed, they do not come into close contact, but rather a gap exists between them. This gap is curved.

[0063] The control unit 70 controls various operating mechanisms provided in the substrate processing apparatus 100. The control unit 70 also controls the operation of the processing unit 121. The hardware configuration of the control unit 70 is the same as that of a general computer. That is, the control unit 70 includes a CPU, which is a circuit that performs various calculations; a ROM, which is a read-only memory that stores basic programs; a RAM, which is a read-write memory that stores various information; and a storage unit (for example, a magnetic disk or SSD) that stores control software and data. The control unit 70 is electrically connected to the valve 37 and gas supply mechanism 53 of the processing liquid supply unit 30, and controls their operation.

[0064] Furthermore, the memory unit of the control unit 70 stores a recipe (hereinafter referred to as "processing recipe") that defines the procedure and conditions for processing the substrate W. The processing recipe can be stored in the memory unit by, for example, the operator of the device inputting it via the GUI, thereby enabling the substrate processing apparatus.100 It is obtained by multiple substrate processing devices. 100 The board processing unit is managed by a host computer. 100 The processing recipe may be transmitted via communication and stored in the memory unit. The control unit 70 controls the operation of the gas supply mechanism 53 and the like based on the description of the processing recipe stored in the memory unit, thereby carrying out the surface treatment of the substrate W as described in the processing recipe.

[0065] Next, the processing operation in the processing unit 121 having the above configuration will be described. In the processing unit 121 of this embodiment, the processing liquid overflows from the inner tank 11 of the processing tank 10 to the outer tank 12, and the processing liquid that flows out of the outer tank 12 returns to the inner tank 11, thereby circulating the processing liquid. Specifically, the processing liquid that flows out of the outer tank 12 into the piping 32 is sent to the nozzle 31 by the pump 33. At this time, the processing liquid flowing through the piping 32 is heated by the heater 34 as needed. The flow rate of the processing liquid flowing through the piping 32 is also controlled by the flow rate adjustment valve 36. Furthermore, the drainage unit 40 discharges the used processing liquid from the processing tank 10 as needed, and the new liquid supply mechanism supplies new liquid to the processing tank 10. In this embodiment, a mixture of strongly alkaline TMAH, IPA, and pure water is used as the processing liquid, and the TMAH is used to perform etching of polysilicon. In the etching of polysilicon using TMAH, it is known that the etching rate decreases when the dissolved oxygen concentration in the processing liquid increases, so it is important to reduce the amount of oxygen dissolved in the processing liquid.

[0066] The processing liquid supplied to the nozzle 31 is discharged upward into the inner tank 11. The processing liquid discharged from the nozzle 31 strikes the dispersion plate 15 and spreads horizontally along the surface of the dispersion plate 15. The processing liquid spread horizontally by the dispersion plate 15 reaches the flow straightening plate 17, passes through multiple processing liquid holes 17a, and rises from these processing liquid holes 17a, forming a laminar flow upward within the inner tank 11. The processing liquid that reaches the upper end of the inner tank 11 overflows into the outer tank 12.

[0067] The substrates W are immersed in the processing liquid while a laminar flow of the processing liquid is formed within the processing tank 10. Specifically, the lifter 20 receives multiple substrates W, which have been transported by the main transport robot 180, at a lifting position above the processing tank 10. The substrates W are placed on three holding rods 21 and held by the lifter 20. Subsequently, the control unit 70 operates the drive mechanism 24 to lower the lifter 20, lowering the substrates W to the immersion position in the processing tank 10 and immersing the substrates W in the processing liquid. At this time, the first lid 81 and the second lid 82 are open, and the upper opening of the processing tank 10 is open (see Figure 9).

[0068] After the lifter 20 stops descending and holds the substrate W in the immersion position, the control unit 70 operates the first opening / closing mechanism 83 and the second opening / closing mechanism 84 to close the first lid 81 and the second lid 82 (see Figure 8). As a result, the upper opening of the processing tank 10 is covered by the lid 80, and the processing liquid stored in the processing tank 10 is isolated from the outside atmosphere by the first lid 81 and the second lid 82, thereby suppressing the dissolution of oxygen into the processing liquid.

[0069] Furthermore, when the first lid 81 and the second lid 82 are closed, at least the lower surfaces of the perforated plates 85 and 86 are immersed in the processing liquid. This reduces the amount of air trapped between the liquid surface of the processing liquid and the lid 80, thereby more effectively suppressing the dissolution of oxygen into the processing liquid. However, even when the first lid 81 and the second lid 82 are closed, the height of the perforated plates 85 and 86 is higher than the height of the upper end of the substrate W held in the immersed position.

[0070] With a laminar flow of processing liquid formed in the processing tank 10, the substrate W is held in the immersion position by the lifter 20, causing a laminar flow of processing liquid to flow between the substrates W. As a result, the surface of the substrate W is exposed to the processing liquid, and the surface treatment of the substrate W (etching in this embodiment) proceeds.

[0071] Furthermore, the gas supply mechanism 53 of the bubble supply unit 50 supplies gas (nitrogen) to the corresponding bubble supply pipe 51. The gas supplied to the bubble supply pipe 51 is discharged into the processing liquid from a plurality of bubble holes provided on the upper side of the bubble supply pipe 51, forming bubbles. Since the plurality of bubble holes are positioned between adjacent substrates W held by the lifter 20, the bubbles discharged from the bubble supply pipe 51 rise between the adjacent substrates W. In other words, a large number of bubbles rise near the surface of the substrates W.

[0072] Figure 11 shows the processing of the substrate W in the processing unit 121. When etching is performed using TMAH as in the first embodiment, the etching rate increases as the dissolved oxygen concentration in the processing solution decreases. When nitrogen bubbles are supplied into the processing solution from multiple bubble supply tubes 51, the dissolved oxygen in the processing solution is replaced by nitrogen, which lowers the dissolved oxygen concentration and, as a result, increases the etching rate of the substrate W.

[0073] Nitrogen bubbles discharged from the six bubble supply pipes 51 rise through the processing liquid and reach the liquid surface. If the perforated plates 85 and 86 are not provided, a large number of bubbles will adhere to the lid 80 and accumulate at the interface between the processing liquid and the first lid 81 and the second lid 82, causing the vicinity of the upper edge of the substrate W to come into contact with the bubbles. In that case, the vicinity of the upper edge of the substrate W will no longer be in contact with the processing liquid and will not be etched. As a result, the in-plane uniformity of the etching process of the substrate W may be impaired. In particular, in this embodiment, since IPA is contained in the processing liquid, bubbles are difficult to eliminate and tend to accumulate.

[0074] Therefore, in the first embodiment, a perforated plate 85 with multiple holes 87 is attached to the lower surface of the first lid 81, and a perforated plate 86 with multiple holes 88 is attached to the lower surface of the second lid 82. Nitrogen bubbles that reach the interface between the processing liquid and the perforated plates 85 and 86 are released into the flow path 91 through the multiple holes 87 in the perforated plate 85 or the multiple holes 88 in the perforated plate 86. Since the diameter of the bubbles in the processing liquid is about 4 mm, while the diameter of the holes 87 and 88 is 5 mm to 10 mm, the bubbles can easily pass through the holes 87 and 88.

[0075] In particular, in the first embodiment, the flow path 91 is depressurized by the suction unit 93 to create a negative pressure. As a result, nitrogen bubbles that reach the interface between the processing liquid and the perforated plates 85 and 86 are forcibly sucked in through the holes 87 or 88 and released into the flow path 91. The nitrogen released into the flow path 91 flows through the flow path 91 in the direction of suction by the suction unit 93 (towards the (+X) side in the example of Figure 11) and is discharged to the outside of the processing tank 10, as shown in Figure 11.

[0076] In this manner, bubbles that reach the interface between the processing liquid and the punching plates 85 and 86 are smoothly discharged to the outside of the processing tank 10, preventing the bubbles from coming into contact with a portion of the substrate W and hindering the etching of that portion. Furthermore, since the surface of the processing liquid is covered by the first lid 81 and the punching plate 85 and the second lid 82 and the punching plate 86, it is possible to suppress the dissolution of oxygen into the processing liquid from the external atmosphere. As a result, it is possible to suppress the incorporation of oxygen from the atmosphere while smoothly discharging bubbles and suppressing a decrease in the in-plane uniformity of the etching process.

[0077] After the etching process for a predetermined time is completed, the control unit 70 operates the first opening / closing mechanism 83 and the second opening / closing mechanism 84 to open the first cover 81 and the second cover 82. Subsequently, the control unit 70 operates the drive mechanism 24 to raise the lifter 20 and lift the substrate W out of the processing tank 10. Then, the main transport robot 180 receives the processed substrate W from the lifter 20. In this way, the series of processes in the processing unit 121 are completed.

[0078] In the first embodiment, a perforated plate 85 with multiple holes 87 is attached to the lower surface of the first lid 81, and a perforated plate 86 with multiple holes 88 is attached to the lower surface of the second lid 82. When surface treatment is performed on the substrate W, the first lid 81 and the second lid 82 are closed, and the liquid surface of the treatment solution is covered by the first lid 81 and perforated plate 85 and the second lid 82 and perforated plate 86, thereby suppressing the dissolution of oxygen from the external atmosphere into the treatment solution. Furthermore, by immersing the lower surfaces of the perforated plates 85 and 86 in the treatment solution, the amount of air trapped between the liquid surface of the treatment solution and the perforated plates 85 and 86 is reduced as much as possible, further suppressing the dissolution of oxygen into the treatment solution. This makes it possible to prevent a decrease in the etching rate, especially on the upper part of the substrate W.

[0079] Furthermore, nitrogen bubbles discharged from the multiple bubble supply pipes 51 and rising through the processing liquid reach the interface between the processing liquid and the punching plates 85 and 86. The nitrogen bubbles that reach this interface are released into the flow path 91 through the multiple holes 87 provided in the punching plate 85 or the multiple holes 88 provided in the punching plate 86. In particular, because negative pressure is applied to the flow path 91 by the suction unit 93, the nitrogen bubbles are forcibly sucked in through the holes 87 or 88 and released smoothly into the flow path 91. The nitrogen released into the flow path 91 is smoothly discharged to the outside of the processing tank 10 through the flow path 91. This eliminates the accumulation of bubbles at the interface and prevents the bubbles from coming into contact with a part of the substrate W. As a result, the processing liquid comes into uniform contact with the entire surface of the substrate W, and the in-plane uniformity of the etching process can be maintained. In other words, even if nitrogen bubbles are supplied with the lid 80 immersed in the processing liquid, a decrease in processing uniformity can be suppressed.

[0080] <Second Embodiment> Next, a second embodiment of the present invention will be described. Figure 12 is a diagram showing the main components of the processing unit 121 of the second embodiment. In Figure 12, the same reference numerals are used for elements that are the same as those in the first embodiment (Figure 8, etc.). In the second embodiment, in addition to the suction unit 93 that draws gas from the flow path 91, an air supply unit 95 that supplies gas to the flow path 91 is further provided.

[0081] In the second embodiment as well, a flow path 91 is formed between the perforated plates 85, 86 and the first lid 81 and the second lid 82. The air supply unit 95 supplies, for example, nitrogen gas to the flow path 91. A blower can be used as the air supply unit 95. Note that the gas supplied by the air supply unit 95 is not limited to nitrogen gas, but can be any inert gas (for example, argon or helium).

[0082] The air supply unit 95 and the suction unit 93 are located on opposite sides of the flow path 91. That is, the air supply unit 95 is connected to one side of the flow path 91, and the suction unit 93 is connected to the opposite side. Therefore, the direction in which the air supply unit 95 supplies nitrogen gas to the flow path 91 and the direction in which the suction unit 93 draws air from the flow path 91 are the same, and in the example in Figure 12, both are directed towards the (+X) side.

[0083] As nitrogen gas is supplied from one side of the flow path 91 by the air supply unit 95 and sucked from the opposite side by the suction unit 93, a high-speed nitrogen gas flow is formed in the flow path 91 as shown by arrow AR12 in Figure 12. With such a high-speed nitrogen gas flow formed in the flow path 91, the flow path 91 functions like an aspirator, and negative pressure acts on the multiple holes 87 and 88. As a result, nitrogen bubbles that reach the interface between the processing liquid and the punching plates 85 and 86 are forcibly sucked in through holes 87 or 88, and the same effect as in the first embodiment can be obtained. The configuration and processing operation of the processing unit 121 in the second embodiment are the same as in the first embodiment, except for the provision of the air supply unit 95.

[0084] <Third Embodiment> Next, a third embodiment of the present invention will be described. Figure 13 is a plan view showing a perforated plate 185 of the third embodiment. In the first embodiment, multiple holes 87, 88 were provided at a uniform density within each surface of the perforated plates 85, 86, but in the third embodiment, the density of holes 188 differs depending on the region of the perforated plate 185.

[0085] In the third embodiment, the density of holes 188 in the peripheral region 186 of the perforated plate 185 is higher than the density of holes 188 in the central region 187. That is, the peripheral region 186 has a higher density of holes 188 compared to the central region 187.

[0086] Bubbles that reach the liquid surface of the processing liquid tend to flow toward the periphery of the processing tank 10. With the perforated plate 185 of the third embodiment, since holes 188 are provided at a high density in the peripheral region 186, it is possible to efficiently suck up bubbles that are flowing toward the periphery of the processing tank 10. In addition, the negative pressure generated by the suction section 93 acts more strongly in the peripheral region 186 than in the central region 187 of the perforated plate 185, so if holes 188 are provided at a high density in the peripheral region 186, bubbles can be sucked up more efficiently. The configuration and processing operation of the processing unit 121 of the third embodiment, excluding the perforated plate 185, are the same as in the first embodiment.

[0087] <Fourth Embodiment> Next, a fourth embodiment of the present invention will be described. Figure 14 is a partial cross-sectional view of the punching plate 285 of the fourth embodiment. In the first embodiment, cylindrical holes 87 and 88 were provided in the punching plates 85 and 86, but in the fourth embodiment, a plurality of frustoconical holes 287 are provided in the punching plate 285.

[0088] In the fourth embodiment, as shown in Figure 14, each of the multiple holes 287 drilled in the perforated plate 285 has a tapered surface 289 formed thereon, where the hole diameter decreases towards the top. That is, each of the multiple holes 287 is frustoconical in shape.

[0089] Bubbles that reach the interface between the processing liquid and the punching plate 285 are guided diagonally upward by the tapered surface 289 and are more smoothly drawn into the holes 287. This ensures that bubble accumulation at the interface between the processing liquid and the punching plate 285 is eliminated, and contact between the bubbles and the substrate W is more reliably prevented. The configuration and processing operation of the processing unit 121 in the fourth embodiment, excluding the punching plate 285, are the same as in the first embodiment.

[0090] <Fifth Embodiment> Next, a fifth embodiment of the present invention will be described. Figure 15 shows the configuration of the lid portion 80 and the perforated plate 385 of the fifth embodiment. In the fifth embodiment, the lid portion 80 is also provided with a plurality of ventilation holes 99.

[0091] In the fifth embodiment, a flow channel 91 of a predetermined width is formed between the perforated plate 385 and the lid portion 80. The perforated plate 385 is provided with a plurality of holes 387. The lid portion 80 is also provided with a plurality of ventilation holes 99. The holes 387 and the ventilation holes 99 are in communication with the flow channel 91.

[0092] Nitrogen bubbles that reach the interface between the processing liquid and the perforated plate 387 are drawn in through the multiple holes 387 and released into the flow path 91. In the fifth embodiment, the nitrogen released into the flow path 91 is discharged to the outside of the processing tank 10 through multiple vent holes 99 provided in the lid 80. This eliminates the accumulation of bubbles at the interface between the processing liquid and the perforated plate 385, preventing contact between the bubbles and the substrate W. Furthermore, the outflow of nitrogen from the vent holes 99 prevents oxygen from the external atmosphere from flowing back in through the vent holes 99. This prevents oxygen from dissolving into the processing liquid and increasing the dissolved oxygen concentration.

[0093] The vent hole 99 may be provided directly above the hole 387. This allows air bubbles drawn in from the hole 387 to be discharged more smoothly through the vent hole 99. However, on the other hand, this increases the risk of oxygen dissolving into the processing liquid through the vent hole 99 and the hole 387. As shown in Figure 15, if the vent hole 99 is provided at a position different from directly above the hole 387, the backflow of oxygen from the vent hole 99 through the hole 387 can be further suppressed. The configuration and processing operation of the remaining processing unit 121, other than the provision of the vent hole 99 in the lid 80, are the same as in the first embodiment.

[0094] <Variation> While embodiments of the present invention have been described above, various modifications can be made to this invention without departing from its spirit. For example, in each of the above embodiments, a suction section 93 was provided, and in addition, in the second embodiment, an air supply section 95 was provided, but the suction section 93 and the air supply section 95 are not essential elements. That is, even without providing the suction section 93 and the air supply section 95, if a perforated plate with multiple holes is attached to the lower surface of the lid, air bubbles that reach the interface between the processing liquid and the perforated plate can be released into the flow path through the holes, eliminating the accumulation of air bubbles at the interface. However, as in each of the above embodiments, providing the suction section 93 and applying negative pressure to the flow path 91 allows for smoother suction of air bubbles through the holes.

[0095] Furthermore, in the second embodiment, an air supply section 95 was provided on one side of the flow path 91 and a suction section 93 was provided on the opposite side. However, instead, suction sections 93 may be provided on both sides of the flow path 91. In this way, a stronger negative pressure can be applied to the flow path 91, and air bubbles can be effectively sucked in through the holes. [Explanation of symbols]

[0096] 1. Substrate processing apparatus 10 Processing tanks 11 Inner tank 12 Outer tank 15 Dispersion plate 17 Rectifier plate 20 Lifters 22 Back plate 30 Processing liquid supply unit 31 nozzles 50 Bubble supply unit 51 Bubble supply pipe 53 Gas supply mechanism 70 Control Unit 80 Lid 81. First Lid 82 Second Lid 85, 86, 185, 285, 385 perforated plates 87,88,188,287,387 holes 91 Flow channel 93 Suction part 95 Air supply section 99 ventilation holes 186 Peripheral region 187 Central area 289 Tapered surface W board

Claims

1. A substrate processing apparatus for performing surface treatment on a substrate using a processing solution, A treatment tank for storing the treated liquid, A processing liquid supply unit that supplies processing liquid into the processing tank, A substrate holding unit that holds the substrate and immerses the substrate in the processing liquid stored in the processing tank, A tubular bubble supply pipe is provided inside the processing tank and supplies bubbles to the processing liquid stored in the processing tank from below the substrate held in the substrate holding section. A lid that covers the upper opening of the processing tank, A perforated plate with multiple holes is attached to the underside of the lid at a predetermined distance from the underside of the lid, Equipped with, A substrate processing apparatus characterized in that a channel for discharging bubbles supplied from the bubble supply pipe is formed between the punching plate and the lower surface of the lid.

2. A substrate processing apparatus for performing surface treatment on a substrate with a processing solution, A treatment tank for storing the treated liquid, A processing liquid supply unit that supplies processing liquid into the processing tank, A substrate holding unit that holds the substrate and immerses the substrate in the processing liquid stored in the processing tank, A tubular bubble supply pipe is provided inside the processing tank and supplies bubbles to the processing liquid stored in the processing tank from below the substrate held in the substrate holding section. A lid that covers the upper opening of the processing tank, A perforated plate with multiple holes is attached to the underside of the lid at a predetermined distance from the underside of the lid, Equipped with, A substrate processing apparatus characterized in that the density of holes provided at the periphery of the punching plate is higher than the density of holes provided at the center.

3. A substrate processing apparatus for performing surface treatment on a substrate with a processing solution, A treatment tank for storing the treated liquid, A processing liquid supply unit that supplies processing liquid into the processing tank, A substrate holding unit that holds the substrate and immerses the substrate in the processing liquid stored in the processing tank, A tubular bubble supply pipe is provided inside the processing tank and supplies bubbles to the processing liquid stored in the processing tank from below the substrate held in the substrate holding section. A lid that covers the upper opening of the processing tank, A perforated plate with multiple holes is attached to the underside of the lid at a predetermined distance from the underside of the lid, Equipped with, A substrate processing apparatus further comprising a suction unit for drawing gas from a flow path formed between the lid and the perforated plate.

4. In the substrate processing apparatus according to claim 3, A substrate processing apparatus further comprising an air supply unit for supplying gas to the flow path formed between the lid and the perforated plate.

5. A substrate processing apparatus for performing surface treatment on a substrate with a processing liquid, A treatment tank for storing the treated liquid, A processing liquid supply unit that supplies processing liquid into the processing tank, A substrate holding unit that holds the substrate and immerses the substrate in the processing liquid stored in the processing tank, A tubular bubble supply pipe is provided inside the processing tank and supplies bubbles to the processing liquid stored in the processing tank from below the substrate held in the substrate holding section. A lid that covers the upper opening of the processing tank, A perforated plate with multiple holes is attached to the underside of the lid at a predetermined distance from the underside of the lid, Equipped with, A substrate processing apparatus characterized by having multiple exhaust holes in the lid portion.

6. A substrate processing apparatus for performing surface treatment on a substrate using a processing solution, A treatment tank for storing the treated liquid, A processing liquid supply unit that supplies processing liquid into the processing tank, A substrate holding unit that holds the substrate and immerses the substrate in the processing liquid stored in the processing tank, A tubular bubble supply pipe is provided inside the processing tank and supplies bubbles to the processing liquid stored in the processing tank from below the substrate held in the substrate holding section. A lid that covers the upper opening of the processing tank, A perforated plate with multiple holes is attached to the underside of the lid at a predetermined distance from the underside of the lid, Equipped with, A substrate processing apparatus characterized in that the perforated plate covers the surface of the processing liquid stored in the processing tank.

7. In the substrate processing apparatus according to any one of claims 1 to 6, A substrate processing apparatus characterized in that the plurality of holes are provided with tapered surfaces in which the hole diameter decreases as it approaches the top.

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