Semiconductor devices, imaging devices

Abstract

The present technology relates to a semiconductor device and an imaging device that make it possible to efficiently dissipate heat generated in a semiconductor package in which a resin is used. The present invention comprises a first substrate, a second substrate, a wiring layer positioned between the first and second substrates, and a slit that passes through the first substrate and reaches the wiring layer. An air gap is provided to each wiring element provided in the wiring layer. The present technology can be applied to, e.g., a semiconductor device in which a chip having an imaging element formed thereon and a chip that processes signals from the imaging element are stacked.

Description

Technical Field

[0001] This technology relates to semiconductor devices and imaging devices, for example, a semiconductor device and an imaging device with improved heat dissipation efficiency.

Background Art

[0002] Packages of optical devices that mount optical elements such as imaging elements such as CCD (Charged-Coupled Device) and CMOS (Complementary Metal-Oxide Semiconductor), light-receiving elements such as PD (Photo Diode), MEMS (Micro Electro Mechanical Systems) elements such as optical switches and mirror devices, and light-emitting elements such as laser diodes (LD; Laser Diode), LEDs (Light Emitting Diode), and vertical cavity surface emitting lasers (VCSELs) have become widespread (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Since the above-described package is covered with a resin having a low thermal conductivity compared to metals and substrates, for example, heat generated in the substrate may not be radiated to the outside, and there is a possibility that heat accumulates in the package.

[0005] This technology has been made in view of such a situation, and aims to improve the heat dissipation efficiency.

Means for Solving the Problems

[0006] One aspect of this technology is a semiconductor device comprising a first substrate, a second substrate, a wiring layer located between the first and second substrates, and a slit that penetrates the first substrate and reaches the wiring layer. The wiring layer has a gap connected to the slit. It is a semiconductor device.

[0007] One aspect of this technology is an imaging device comprising: a first chip on which a solid-state image sensor is formed; a second chip for processing signals from the first chip; a wiring layer connecting a first wiring layer included in the first chip and a second wiring layer included in the second chip; a void provided in a part of the wiring layer; and a slit penetrating the second chip and connected to the void.

[0008] One aspect of this technology is a semiconductor device comprising a first substrate, a second substrate, a wiring layer located between the first substrate and the second substrate, and a slit that penetrates the first substrate and reaches the wiring layer. The wiring layer has a gap connected to the slit. .

[0009] In one aspect of this technology, the imaging device includes a first chip on which a solid-state image sensor is formed, a second chip for processing signals from the first chip, a wiring layer connecting a first wiring layer included in the first chip and a second wiring layer included in the second chip, an air gap provided in a part of the wiring layer, and a slit that penetrates the second chip and is connected to the air gap.

[0010] The imaging device may be a standalone device or an internal block that makes up a single device. [Brief explanation of the drawing]

[0011] [Figure 1] This figure shows the configuration of one embodiment of a semiconductor device to which this technology is applied. [Figure 2] This is a cross-sectional view of the semiconductor device in the first embodiment. [Figure 3]It is a plan view and a cross-sectional view of a semiconductor device in the second embodiment. [Figure 4] It is a cross-sectional view of a semiconductor device in the second embodiment. [Figure 5] It is a diagram for explaining heat dissipation efficiency. [Figure 6] It is a diagram for explaining heat dissipation efficiency. [Figure 7] It is a plan view and a cross-sectional view of a semiconductor device in the third embodiment. [Figure 8] It is a plan view and a cross-sectional view of a semiconductor device in the fourth embodiment. [Figure 9] It is a plan view and a cross-sectional view of a semiconductor device in the fifth embodiment. [Figure 10] It is a cross-sectional view of a semiconductor device in the fifth embodiment. [Figure 11] It is a plan view and a cross-sectional view of a semiconductor device in the sixth embodiment. [Figure 12] It is a cross-sectional view of a semiconductor device in the sixth embodiment. [Figure 13] It is a plan view and a cross-sectional view of a semiconductor device in the seventh embodiment. [Figure 14] It is a cross-sectional view of a semiconductor device in the seventh embodiment. [Figure 15] It is a diagram for explaining the manufacture of a semiconductor device. [Figure 16] It is a diagram for explaining the manufacture of a semiconductor device. [Figure 17] It is a diagram for explaining the manufacture of a semiconductor device. [Figure 18] It is a diagram for explaining the manufacture of a semiconductor device. [Figure 19] It is a diagram for explaining the configuration of a semiconductor device in the eighth embodiment. [Figure 20] It is a diagram showing an example of an electronic device. [Figure 21] It is a diagram showing an example of a schematic configuration of an endoscopic surgery system. [Figure 22]It is a block diagram showing an example of the functional configuration of a camera head and a CCU. [Figure 23] It is a block diagram showing an example of the schematic configuration of a vehicle control system. [Figure 24] It is an explanatory diagram showing an example of the installation positions of an out-vehicle information detection unit and an imaging unit.

Embodiments for Carrying Out the Invention

[0012] Hereinafter, embodiments for carrying out the present technology (hereinafter referred to as embodiments) will be described.

[0013] <First Embodiment> The present technology described below can be applied to semiconductor devices including chips of image pickup elements such as CCD (Charged-Coupled Device) and CMOS (Complementary Metal-Oxide Semiconductor). It can also be applied to semiconductor devices including chips of optical elements such as light receiving elements such as PD (Photo Diode), MEMS (Micro Electro Mechanical Systems) elements such as optical switches and mirror devices, and light emitting elements such as laser diodes (LD; Laser Diode), LEDs (Light Emitting Diode), and vertical cavity surface emitting lasers (VCSEL: vertical cavity surface emitting laser).

[0014] The upper diagram in FIG. 1 is a plan view showing a configuration example of a semiconductor device 11a in the first embodiment. The lower diagram in FIG. 1 is a cross-sectional view showing a configuration example of the semiconductor device 11a along the line segment X-X' in the upper diagram of FIG. 1. FIG. 2 is a cross-sectional view showing a configuration example of the semiconductor device 11a along the line segment Y-Y' in the upper diagram of FIG. 1.

[0015] The semiconductor device 11a has a configuration in which a chip 21 and a chip 22 are stacked. For example, the chip 21 can be a chip on which an image pickup element is mounted, and the chip 22 can be a chip on which a processing circuit for processing signals from the chip 21 is mounted.

[0016] Chip 21 has a configuration in which a lower substrate 31 and a lower wiring layer 32 are stacked. Chip 22 has a configuration in which an upper substrate 41 and an upper wiring layer 42 are stacked. Here, we will refer to chip 21 as the lower part and chip 22 as the upper part, and the substrates and wiring layers included in chip 21 and chip 22 will be distinguished as the upper and lower parts, respectively.

[0017] If the chip 21 is a chip that includes an image sensor, then the lower substrate 31 has a photodiode, an on-chip lens, etc., formed on it. The lower substrate 31 can be, for example, a silicon (Si) substrate. In the lower wiring layer 32, wirings 33 and 34 are formed within an interlayer insulating film 35. The wirings 33 and 34 are formed using, for example, copper (Cu), aluminum (Al), tungsten (W), etc. The interlayer insulating film 35 is formed using, for example, a silicon oxide film, a silicon nitride film, etc.

[0018] The upper substrate 41 of the chip 22 can be, for example, a silicon (Si) substrate. The upper wiring layer 42 has wirings 43 and 44 formed within an interlayer insulating film 45. The wirings 43 and 44 are formed using, for example, copper (Cu), aluminum (Al), tungsten (W), etc. The interlayer insulating film 45 is formed using, for example, a silicon oxide film, a silicon nitride film, etc.

[0019] In the semiconductor device 11a shown in Figure 1, the wiring layers are connected by metallic bonds. The wiring 34 formed on the upper wiring layer 42 side of the lower wiring layer 32 and the wiring 44 formed on the lower wiring layer 32 side of the upper wiring layer 42 are connected by metallic bonds.

[0020] A through-hole 24 is formed at a predetermined position in the upper substrate 41, and a connecting conductor is formed on the inner wall of the through-hole 24 that is connected to the wiring 43 in the upper wiring layer 42. The inside of the through-hole 24 is filled with an insulator made of the same material as the insulating film 23. The insulating film 23 can be formed, for example, with an SiO2 film or a SiN film.

[0021] The connecting conductor formed on the inner wall of the through-hole 24 is connected to the rewiring 25 formed on the upper surface of the upper substrate 41 (the upper surface in Figure 1, the surface opposite to the surface on which the chips 21 are stacked). The through-hole 24 may also be referred to as the through-electrode 24 as appropriate. As shown in the upper part of Figure 1 and in Figure 2, solder balls 26 are formed on the rewiring 25. The solder balls 26 are used to connect to a substrate that is not shown.

[0022] The semiconductor device 11a in the first embodiment has a slit 27a. As shown in the upper part of Figure 1, the slit 27a is formed in a predetermined position, size, and shape in a plan view. The shape of the opening of the slit 27a may be linear (slit shape), polygonal, circular, or the like. In the following description, the case where it is slit shape will be used as an example.

[0023] As shown in the lower diagram of Figure 1, the slit 27a is provided in a cross-sectional view to a position that penetrates the upper wiring layer 42 and the lower wiring layer 32. The semiconductor device 11a has a slit 27a that penetrates the upper substrate 41, the upper wiring layer 42, and the lower wiring layer 32. A stopper film 28 is formed on the side surface of the slit 27a located in the upper wiring layer 42 and the lower wiring layer 32.

[0024] The semiconductor device 11a has a wiring layer consisting of an upper wiring layer 42 and a lower wiring layer 32 located between the upper substrate 41 and the lower substrate 31, and is provided with a slit 27a that penetrates the upper substrate 41 and reaches the wiring layer. This slit 27a is in contact with the outside of the semiconductor device 11a.

[0025] By providing a slit 27a that is in contact with the outside, heat generated inside the semiconductor device 11a can be efficiently discharged to the outside air. For example, heat generated in the lower substrate 31 is released to the outside air through the slit 27a. For example, heat generated in the lower substrate 31 is transferred in the order of lower substrate 31, lower wiring layer 32, upper wiring layer 42, and upper substrate 41, and some heat is released to the outside air, but heat dissipation through the slit 27a is more efficient than release through this path.

[0026] According to this technology, the heat generated in the semiconductor device 11a can be efficiently dissipated.

[0027] <Second Embodiment> The upper part of Figure 3 is a plan view showing an example configuration of the semiconductor device 11b in the second embodiment. The lower part of Figure 2 is a cross-sectional view showing an example configuration of the semiconductor device 11b along the line segment X-X' in the upper part of Figure 2. Figure 4 is a cross-sectional view showing an example configuration of the semiconductor device 11b along the line segment Y-Y' in the upper part of Figure 3.

[0028] In the semiconductor device 11b of the second embodiment, the same reference numerals are used for parts similar to those in the semiconductor device 11a of the first embodiment, and their descriptions are omitted as appropriate.

[0029] Comparing the semiconductor device 11b in the second embodiment with the semiconductor device 11a in the first embodiment, the semiconductor device 11b in the second embodiment differs from the semiconductor device 11a in the first embodiment in that a gap 51b is provided, but all other aspects are the same.

[0030] The gap 51b is provided so that the wiring 33, wiring 34, wiring 43, and wiring 44 are in contact with the lower wiring layer 32 and the upper wiring layer 42 in an exposed state. Note that while it is stated here that the wiring is in contact with the gap 51b in an exposed state, this also includes cases where a protective film is formed on the wiring to prevent it from being affected by moisture or other factors.

[0031] The side walls of the void 51b are surrounded by a stopper film 28. The void 51b and the slit 27b are formed as a single unit. The void 51b is configured to be in contact with the outside (outside air) of the semiconductor device 11b through the slit 27b.

[0032] In the following explanation, the connected and integrated wires 33, 34, 43, and 44 will be collectively referred to as wire 52. Figure 3 shows an example where four wires 52 are arranged side by side. The four wires 52 are designated as wire 52-1, wire 52-2, wire 52-3, and wire 52-4 from right to left in the figure.

[0033] In the semiconductor device 11b shown in Figure 3, four wirings 52-1 to 52-4 are arranged in the lateral direction. The air gap 51b is formed such that the central wirings 52-2 and 52-3 are in contact with the air gap 51b. Wirings 52-1 and 52-4 are formed embedded within the interlayer insulating film 35 or the interlayer insulating film 45.

[0034] In the semiconductor device 11b shown in Figure 3, an example is shown where two of the four laterally formed wirings 52 are included in the gap 51b. The number of laterally formed wirings 52 included in the gap 51b is a design matter and is not limited to two.

[0035] As shown in the lower part of Figure 3 and in Figure 4, the void 51b is formed surrounded by the interlayer insulating film 35 of the lower wiring layer 32 and the interlayer insulating film 45 of the upper wiring layer 42. The void 51b is formed such that its sides and bottom are surrounded by the interlayer insulating film 35 (45), and a portion of its top surface is connected to the slit 27b.

[0036] The semiconductor device 11b has a wiring layer consisting of an upper wiring layer 42 and a lower wiring layer 32 located between the upper substrate 41 and the lower substrate 31, and a slit 27b is provided that penetrates the upper substrate 41 and reaches the wiring layer. This slit 27b is connected to an air gap 51b formed in the wiring layer. Since the slit 27b is in contact with the outside of the semiconductor device 11b, the air gap 51b can also be structured to be in contact with the outside via the slit 27b.

[0037] In this way, the wiring 52 comes into contact with air, forming a gap 51b. This allows heat to be dissipated from the wiring 52 into the gap 51b and then discharged from the gap 51b to the outside of the semiconductor device 11b through the slit 27b. Therefore, a configuration that allows for more efficient heat dissipation can be achieved. This will be explained further with reference to Figures 5 and 6.

[0038] For comparison, Figure 5 shows a semiconductor device 11b' that does not have the air gap 51b, and the heat dissipation path will be explained. The semiconductor device 11b' that does not have the air gap 51b is indicated with a dash to distinguish it from the semiconductor device 11b that has the air gap 51b.

[0039] As shown in Figure 5, all of the wirings 52-1 to 52-4 are enclosed within the interlayer insulating film 35' and the interlayer insulating film 45'. In a semiconductor device 11b' with this configuration, three heat dissipation paths can be considered.

[0040] As for path 1, the heat generated on the lower substrate 31' is, Lower substrate 31' → Interlayer insulating film 35' → Interlayer insulating film 45' → Upper substrate 41' → Insulating film 23' → Outside air There is a pathway through which the heat is transmitted and dissipated in that order.

[0041] As for path 2, the heat generated on the lower substrate 31' is Lower substrate 31' → Wiring 52' → Through electrode 24' → Insulating film 23' → Outside air There is a pathway through which the heat is transmitted and dissipated in that order.

[0042] As for path 3, the heat generated on the lower substrate 31' is Lower circuit board 31' → Wiring 52' → Through electrode 24' → Rewiring 25' → Solder ball 26' → Open air There is a pathway through which the heat is transmitted and dissipated in that order.

[0043] Next, referring to Figure 6, the heat dissipation paths in the semiconductor device 11b having the air gap 51b will be described. In the semiconductor device 11b having the air gap 51b, there are at least two more heat dissipation paths than in the semiconductor device 11b' without the air gap 51b (Figure 5).

[0044] Paths 1 to 3 are the same as those described with reference to Figure 5, and heat is dissipated through the paths described above.

[0045] As for path 4, the heat generated on the lower substrate 31 is Lower substrate 31 → Interlayer insulating film 35 → Interlayer insulating film 45 → Upper substrate 41 → Gap 51b (Slit 27b) → Outside air There is a pathway through which the heat is transmitted and dissipated in that order.

[0046] As for path 5, the heat generated on the lower substrate 31 is Lower circuit board 31 → wiring 52 → air gap 51b (slit 27b) → outside air There is a pathway through which the heat is transmitted and dissipated in that order.

[0047] Paths 1 to 3 dissipate heat to the outside air via the insulating film 23, whereas paths 4 and 5 dissipate heat to the outside air without going through the insulating film 23. If the material used for the insulating film 23 is a material with high thermal resistance, the efficiency of heat dissipation via the insulating film 23 is likely to decrease. Since paths 4 and 5 dissipate heat to the outside air without going through the insulating film 23, they can dissipate heat more efficiently than paths 1 to 3 which dissipate heat via the insulating film 23.

[0048] Although not shown in Figure 6, heat generated in the lower substrate 31 can also be transferred from the lower substrate 31 to the air gap 51b and dissipated to the outside air. This path also allows heat to be dissipated to the outside air without going through the insulating film 23, the wiring 52, or the upper substrate 41, thus enabling efficient heat dissipation.

[0049] In this way, by providing the air gap 51b, the heat dissipation efficiency can be improved.

[0050] <Third Embodiment> The upper part of Figure 7 is a plan view showing an example configuration of the semiconductor device 11c in the third embodiment. The lower part of Figure 7 is a cross-sectional view showing an example configuration of the semiconductor device 11c along the line segment X-X' in the upper part of Figure 7. The cross-sectional view of the semiconductor device 11c along the line segment Y-Y' in the upper part of Figure 7 is the same as the cross-sectional view of the semiconductor device 11b shown in Figure 4, so it is omitted from the illustration.

[0051] In the semiconductor device 11c of the third embodiment, the same reference numerals are used for parts similar to those in the semiconductor device 11b of the second embodiment, and their descriptions are omitted as appropriate.

[0052] Comparing the semiconductor device 11c in the third embodiment with the semiconductor device 11b in the second embodiment, the semiconductor device 11c in the third embodiment differs in that it has a larger gap 51c than the gap 51b in the semiconductor device 11b in the second embodiment, but otherwise they are the same.

[0053] In the third embodiment, the wirings 52-1 to 52-4 arranged laterally on the semiconductor device 11c are provided so as to be located within the air gap 51c. The air gap 51c is formed over the entire region where the wirings 52 of the semiconductor device 11c are formed. By configuring the wirings 52 to be formed in such a way that they are all in contact with the air gap 51c, the area of ​​the wirings 52 in contact with the outside air can be increased, thereby further improving heat dissipation efficiency.

[0054] As in the second embodiment, the semiconductor device 11b may be configured such that a portion of the arranged wiring 52 is contained within the gap 51b, or as in the third embodiment, the semiconductor device 11c may be configured such that all of the arranged wiring 52 is contained within the gap 51c. There is no limit to the number of wiring 52 contained within the gap 51; any number is acceptable.

[0055] In this way, by providing the air gap 51b, the heat dissipation efficiency can be improved.

[0056] <Fourth Embodiment> The upper part of Figure 8 is a plan view showing an example configuration of the semiconductor device 11d in the fourth embodiment. The lower part of Figure 8 is a cross-sectional view of an example configuration of the semiconductor device 11d along the line segment X-X' in the upper part of Figure 8. The cross-sectional view of the semiconductor device 11d along the line segment Y-Y' in the upper part of Figure 8 is the same as the cross-sectional view of the semiconductor device 11b shown in Figure 4, so it is omitted from the illustration.

[0057] In the semiconductor device 11d of the fourth embodiment, the same reference numerals are used for parts similar to those in the semiconductor device 11b of the second embodiment, and their descriptions are omitted as appropriate.

[0058] Comparing the semiconductor device 11d in the fourth embodiment with the semiconductor device 11b in the second embodiment, the semiconductor device 11d in the fourth embodiment differs in that a gap 51d is provided for each wiring 52, but other aspects are the same.

[0059] In the semiconductor device 11c shown in Figure 8, a gap 51d-1 is formed in the wiring 52-2, and a gap 51d-2 is formed in the wiring 52-3. A stopper film 28d-1 is formed on the inner wall of the gap 51d-1, and a stopper film 28d-2 is formed on the inner wall of the gap 51d-2.

[0060] Slits 27 are also formed for each wiring 52. Gap 51d-1 is connected to slit 27d-1 and is integrated into a single structure. Gap 51d-2 is connected to slit 27d-2 and is integrated into a single structure.

[0061] In this configuration, by providing an air gap 51d and a slit 27d for each wiring 52, it is possible to dissipate heat to the outside air for each wiring 52, thereby further improving heat dissipation efficiency.

[0062] In the semiconductor device 11d shown in Figure 8, an example is shown in which gaps 51d are provided between wiring 52-2 and wiring 52-3, which are among the wirings 52-1 to 52-4 arranged side by side. However, it is also possible to configure it so that gaps 51d are provided between wiring 52-1 and wiring 52-4 as well.

[0063] As shown in the second to fourth embodiments, the configuration can be such that multiple wirings 52 are contained within a single void 51d, as in the semiconductor device 11b in the second embodiment and the semiconductor device 11c in the third embodiment, or it can be such that one wiring 52 is contained within a single void 51d, as in the semiconductor device 11d in the fourth embodiment.

[0064] The strength of the semiconductor device 11 can be increased by having one wiring 52 contained in one air gap 51d, as in the semiconductor device 11d of the fourth embodiment, compared to a configuration in which multiple wirings 52 are contained in one air gap 51d, as in the semiconductor device 11b of the second embodiment and the semiconductor device 11c of the third embodiment.

[0065] <Fifth Embodiment> The upper part of Figure 9 is a plan view showing an example configuration of the semiconductor device 11e in the fifth embodiment. The lower part of Figure 9 is a cross-sectional view showing an example configuration of the semiconductor device 11e along the line segment X-X' in the upper part of Figure 9. Figure 10 shows a cross-sectional view showing an example configuration of the semiconductor device 11e along the line segment Y-Y' in the upper part of Figure 9.

[0066] In the semiconductor device 11e of the fifth embodiment, the same reference numerals are used for parts similar to those in the semiconductor device 11b of the second embodiment, and their descriptions are omitted as appropriate.

[0067] The semiconductor device 11e in the fifth embodiment differs from the semiconductor device 11b in the second embodiment in that the wiring 52 formed in the gap 51e is a dummy wiring 61e. As shown in the lower part of Figure 9, a dummy wiring 61e is formed in the gap 51e of the semiconductor device 11e.

[0068] The dummy wiring 61e is formed in the area where the air gap 51e is provided, and unlike the other wirings 52, it is not used for supplying voltage or transmitting signals. Since the dummy wiring 61e does not need to be connected to other boards, it can be configured without solder balls 26, as shown in Figure 10. Of course, solder balls 26 connected to the dummy wiring 61e can also be provided.

[0069] As shown in the upper part of Figure 9, the rewiring 25e may be made larger. In the example shown in the upper part of Figure 9, the rewiring 25e is connected to two through electrodes 24e-1 and 24e-2, and is formed in a larger shape than, for example, the rewiring 25 shown in the upper part of Figure 3. Since the rewiring 25 is the part that is in contact with the outside air, making such a part larger can improve the efficiency of heat dissipation to the outside air in the rewiring 25 from the heat conducted through the dummy wiring 61e.

[0070] The dummy wiring 61e itself can be configured to more efficiently dissipate heat into the air gap 51e by shaping it so that it has a larger surface area in contact with the air gap 51e. As shown in the lower part of Figure 9, the dummy wiring 61e is shaped such that it connects the wirings 52-2 and 52-3 shown in the lower part of Figure 2, and has a section that connects the wirings 52 together, with that section also in contact with the air gap 51e. In this way, the dummy wiring 61e is shaped so that it has a larger surface area in contact with the air gap 51e, thereby improving heat dissipation efficiency.

[0071] In this way, by providing the air gap 51e and dummy wiring 61e, the heat dissipation efficiency can be improved.

[0072] <Sixth Embodiment> The upper part of Figure 11 is a plan view showing an example configuration of the semiconductor device 11f in the sixth embodiment. The lower part of Figure 11 is a cross-sectional view showing an example configuration of the semiconductor device 11f along the line segment X-X' in the upper part of Figure 11. Figure 12 is a cross-sectional view showing an example configuration of the semiconductor device 11f along the line segment Y-Y' in the upper part of Figure 11.

[0073] In the semiconductor device 11f of the sixth embodiment, the same reference numerals are used for parts similar to those in the semiconductor device 11e of the fifth embodiment, and their descriptions are omitted as appropriate.

[0074] The semiconductor device 11f in the sixth embodiment differs from the semiconductor device 11e in the fifth embodiment in that the through-electrode 24 and rewiring 25 have been removed.

[0075] The semiconductor device 11f includes a dummy wiring 61f. Because of the dummy wiring 61f, the device can be configured without solder balls 26 for external connections, rewiring 25 on which the solder balls 26 are formed, or through electrodes 24 for connecting the rewiring 25 and the dummy wiring 61f.

[0076] The upper substrate 41 on the dummy wiring 61f, in other words, the upper substrate 41 between adjacent slits 27f, can be an area without through-electrodes 24. Therefore, circuits can be placed in this area, increasing the flexibility of the layout.

[0077] In the semiconductor device 11f of the sixth embodiment, the area in contact between the dummy wiring 61f and the air gap 51f is large, allowing for efficient heat dissipation to the outside air.

[0078] It is also possible to implement a combination of any of the first to fourth embodiments with the fourth or fifth embodiment. For example, the second embodiment and the fifth embodiment can be combined to create a configuration in which gaps 51 are formed at the location of the wiring 52 and the location of the dummy wiring 61, respectively.

[0079] <Seventh Embodiment> The upper part of Figure 13 is a plan view showing an example configuration of the semiconductor device 11g in the seventh embodiment. The lower part of Figure 13 is a cross-sectional view showing an example configuration of the semiconductor device 11g along the line segment X-X' in the upper part of Figure 13. Figure 14 is a cross-sectional view showing an example configuration of the semiconductor device 11g along the line segment Y-Y' in the upper part of Figure 13.

[0080] In the semiconductor device 11g of the seventh embodiment, the same reference numerals are used for parts similar to those in the semiconductor device 11b of the second embodiment, and their descriptions are omitted as appropriate.

[0081] In the first to sixth embodiments, the gap 51 of the semiconductor devices 11a to 11f is shown as a space that spans both the lower wiring layer 32 and the upper wiring layer 42. However, as in the seventh embodiment, semiconductor device 11g, the gap 51g can also be formed only on the upper wiring layer 42 side.

[0082] The wirings 52-2 and 52-3 of the semiconductor device 11g shown in Figure 13 are not in a configuration where the entire wiring is in contact with the void 51g, but rather only a portion of it is in contact. The upper parts of wirings 52-2 and 52-3 are formed within the void 51g, and the lower parts of wirings 52-2 and 52-3 are formed within the interlayer insulating film 35 of the lower wiring layer 32g.

[0083] In this configuration, since the void 51g is formed only on the chip 22 side, the manufacturing process only includes the step of forming the void 51g on the chip 22 side, and the step of forming the void 51g on the chip 21 side can be eliminated. Therefore, the number of processes can be reduced, and the manufacturing cost of the semiconductor device 11g can be reduced.

[0084] In the semiconductor device 11g, the heat conducted through wiring 52-2 and wiring 52-3 can be released to the outside air through the air gap 51g and slit 27g, thereby improving heat dissipation efficiency.

[0085] The seventh embodiment can also be implemented in combination with any of the first to sixth embodiments described above.

[0086] <About the manufacturing process> The manufacturing of the semiconductor device 11 in the first to seventh embodiments will be described with reference to Figures 15 and 16.

[0087] In step S11, chips 21 and 22, on which wiring 52 is formed, are prepared. In the lower wiring layer 32 of chip 21, a portion that will become part of the wiring 52 is formed, and stopper films 28 are formed at both ends of the region where the void 51 is formed. Similarly, in the upper wiring layer 42 of chip 22, a portion that will become part of the wiring 52 is formed, and stopper films 28 are formed at both ends of the region where the void 51 is formed.

[0088] In addition, when manufacturing the semiconductor device 11g in the seventh embodiment, no void 51 is formed in the chip 21, and therefore no stopper film 28 is formed on the chip 21. A protective film or other film not shown may be formed around the wiring 52. In Figure 13, the diagram is simplified, but in process S11, the processing is repeated to achieve the desired shape and size of the wiring 52.

[0089] In step S12, chip 21 and chip 22 are connected by a Cu-Cu connection. In step S13, the upper substrate 41 of chip 22 is thinned by grinding with a grinder or by wet etching.

[0090] In step S14 (Figure 16), through holes 24 are formed in the upper substrate 41, and connecting conductors are formed on the side walls of the through holes 24. In step S15, a gap 51 and a slit 27 are formed. Although not shown in the figures, subsequent steps include the formation of rewiring 25 and the deposition of an insulating film 23 on the upper substrate 41, after which the semiconductor device 11 described above is manufactured.

[0091] Referring to Figures 17 and 18, other manufacturing processes for the semiconductor device 11 will be described.

[0092] In step S31 (Figure 17), chips 21 and 22, on which wiring 52 is formed, are prepared. A portion of the wiring 52 is formed in the lower wiring layer 32 of chip 21. Similarly, a portion of the wiring 52 is formed in the upper wiring layer 42 of chip 22.

[0093] In process S32, the chips 21 and 22 are processed to form the gaps 51 using lithography and dry etching. In process S32, multiple lithography and dry etching processes are performed to achieve the shape and size of the wiring 52.

[0094] Since the void 51 is formed by lithography and dry etching, there is no need to form a stopper film 28. In the explanation above, the case in which a stopper film 28 is present was used as an example, but when the semiconductor device 11 described above is manufactured using this manufacturing process, it is possible to have a configuration without a stopper film 28.

[0095] In step S33, chip 21 and chip 22 are connected by a Cu-Cu connection. In step S34 (Figure 18), the upper substrate 41 of chip 22 is thinned by grinding with a grinder or by wet etching.

[0096] In step S35, through holes 24 and slits 27 are formed in the upper substrate 41, and connecting conductors are formed on the side walls of the through holes 24. Although not shown in the figures, subsequent steps include the formation of rewiring 25 and the deposition of an insulating film 23 on the upper substrate 41, thereby manufacturing the semiconductor device 11 described above.

[0097] The gaps 51 and slits 27 are formed in predetermined positions, with predetermined sizes and shapes, in accordance with the semiconductor device 11 of the first to seventh embodiments described above.

[0098] <Eighth Embodiment> As an eighth embodiment, a case in which any of the semiconductor device 11 of the first to seventh embodiments is applied to an image sensor will be described. Figure 19 is a diagram showing an example configuration when the semiconductor device 11d (Figure 8) of the fourth embodiment is applied to an image sensor.

[0099] The chip 21 included in the image sensor 300 is used as a back-illuminated solid-state image sensor. A photodiode (PD) is formed on the lower substrate 31 of the chip 21, and an on-chip lens 301 is formed on the light incident surface side. Adhesive 302 is placed on at least a portion of the surface of the lower substrate 31 on the side where the on-chip lens 301 is formed, and a transparent substrate 303 is laminated on it.

[0100] A chip 22 is stacked on top of the solid-state image sensor chip 21. This chip 22 can be a chip on which processing circuits and memory for processing signals obtained from the solid-state image sensor are formed.

[0101] Although not shown in Figure 19, as shown in the upper part of Figure 8, rewiring 25 is formed, and solder balls 26 are formed on the rewiring 25. The solder balls 26 are used for connections when other chips or other components are stacked.

[0102] The image sensor 300 includes a semiconductor device 11c, and as described above, the semiconductor device 11c has a configuration that improves heat dissipation efficiency. Therefore, the image sensor 300 itself can also have a configuration that improves heat dissipation efficiency.

[0103] <Configuration of electronic equipment> The image sensor 300 shown in Figure 19 can be applied to various electronic devices, such as imaging devices like digital still cameras and digital video cameras, mobile phones equipped with imaging functions, or other devices equipped with imaging functions.

[0104] Figure 20 is a block diagram showing an example configuration of an imaging device as an electronic device. The imaging device 1001 shown in Figure 20 is configured to include an optical system 1002, a shutter device 1003, an image sensor 1004, a drive circuit 1005, a signal processing circuit 1006, a monitor 1007, and a memory 1008, and is capable of capturing still images and moving images.

[0105] The optical system 1002 is composed of one or more lenses and guides light from the subject (incident light) to the image sensor 1004, forming an image on the light-receiving surface of the image sensor 1004.

[0106] The shutter device 1003 is positioned between the optical system 1002 and the image sensor 1004, and controls the light illumination period and the light shielding period for the image sensor 1004 according to the control of the drive circuit 1005.

[0107] The image sensor 1004 is comprised of the package containing the image sensor described above. The image sensor 1004 accumulates signal charge for a certain period of time in response to light that is imaged onto the light-receiving surface via the optical system 1002 and the shutter device 1003. The signal charge accumulated in the image sensor 1004 is transferred according to the drive signal (timing signal) supplied from the drive circuit 1005.

[0108] The drive circuit 1005 drives the image sensor 1004 and the shutter device 1003 by outputting drive signals that control the transfer operation of the image sensor 1004 and the shutter operation of the shutter device 1003.

[0109] The signal processing circuit 1006 performs various signal processing operations on the signal charge output from the image sensor 1004. The image (image data) obtained by the signal processing circuit 1006 is supplied to the monitor 1007 for display or supplied to the memory 1008 for storage (recording).

[0110] In the imaging device 1001 configured in this way, the image sensor 300, which includes any of the semiconductor devices 11a to 11g described above, can be applied to the image sensor 1004.

[0111] <Examples of application to endoscopic surgical systems> The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein may be applied to an endoscopic surgical system.

[0112] Figure 21 is a diagram showing an example of a schematic configuration of an endoscopic surgical system to which the technology described herein (the technology) may be applied.

[0113] Figure 21 illustrates a surgeon (physician) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgical system 11000. As shown in the figure, the endoscopic surgical system 11000 consists of an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment device 11112, a support arm device 11120 for supporting the endoscope 11100, and a cart 11200 equipped with various devices for endoscopic surgery.

[0114] The endoscope 11100 consists of a barrel 11101, the tip of which is inserted into the body cavity of the patient 11132 for a predetermined length, and a camera head 11102 connected to the base end of the barrel 11101. In the illustrated example, the endoscope 11100 is shown as a so-called rigid endoscope having a rigid barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible endoscope having a flexible barrel.

[0115] An opening into which an objective lens is fitted is provided at the tip of the endoscope tube 11101. A light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the endoscope tube by a light guide extending inside the endoscope tube 11101, and is irradiated through the objective lens towards the object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a straight-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0116] The camera head 11102 contains an optical system and an image sensor. Reflected light from the object being observed (observation light) is focused onto the image sensor by the optical system. The image sensor converts the observation light into electrical signals, generating an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. This image signal is transmitted as RAW data to the camera control unit (CCU) 11201.

[0117] The CCU11201 consists of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and other components, and comprehensively controls the operation of the endoscope 11100 and the display device 11202. Furthermore, the CCU11201 receives image signals from the camera head 11102 and performs various image processing operations on these image signals, such as development processing (demosaic processing), to display the image based on those image signals.

[0118] The display device 11202 displays an image based on an image signal that has been processed by the CCU 11201, under control from the CCU 11201.

[0119] The light source device 11203 consists of a light source such as an LED (light-emitting diode) and supplies illumination light to the endoscope 11100 when photographing the surgical area, etc.

[0120] The input device 11204 is an input interface for the endoscopic surgical system 11000. The user can input various information and instructions to the endoscopic surgical system 11000 via the input device 11204. For example, the user can input instructions to change the imaging conditions (type of light, magnification, focal length, etc.) of the endoscope 11100.

[0121] The treatment instrument control device 11205 controls the drive of the energy treatment instrument 11112 for purposes such as tissue cauterization, incision, or vascular sealing. The insufflation device 11206 delivers gas into the patient's body cavity via the insufflation tube 11111 to inflate the body cavity of the patient 11132 for the purpose of securing a field of view by the endoscope 11100 and securing the operator's working space. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, images, or graphs.

[0122] The light source device 11203, which supplies illumination light to the endoscope 11100 when photographing the surgical area, can be configured as a white light source consisting of, for example, an LED, a laser light source, or a combination thereof. When the white light source is configured as a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to time-divisionally capture images corresponding to each of the RGB light sources by irradiating the observation target with laser light from each RGB laser light source and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter on the image sensor.

[0123] Furthermore, the light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. By controlling the drive of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity, images can be acquired in time-division order, and these images can be combined to generate high dynamic range images without so-called black crushing and white clipping.

[0124] Furthermore, the light source device 11203 may be configured to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue and irradiating with narrow-band light compared to the irradiation light used during normal observation (i.e., white light), so-called narrow-band imaging is performed to image predetermined tissues such as blood vessels on the surface of mucosa with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image from fluorescence generated by irradiation with excitation light. In fluorescence observation, excitation light is irradiated onto body tissue and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is injected into body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated onto the body tissue to obtain a fluorescence image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0125] Figure 22 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU 11201 shown in Figure 21.

[0126] The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with one another.

[0127] The lens unit 11401 is an optical system provided at the connection point with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and then incident on the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses, including a zoom lens and a focus lens.

[0128] The imaging unit 11402 may consist of one image sensor (a so-called single-chip system) or multiple image sensors (a so-called multi-chip system). If the imaging unit 11402 is configured as a multi-chip system, for example, each image sensor may generate image signals corresponding to RGB, and these signals may be combined to obtain a color image. Alternatively, the imaging unit 11402 may be configured to have a pair of image sensors for acquiring image signals for the right and left eyes, respectively, corresponding to 3D (dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical area. In addition, if the imaging unit 11402 is configured as a multi-chip system, multiple lens units 11401 may be provided corresponding to each image sensor.

[0129] Furthermore, the imaging unit 11402 does not necessarily have to be located in the camera head 11102. For example, the imaging unit 11402 may be located inside the lens barrel 11101, directly behind the objective lens.

[0130] The drive unit 11403 is composed of actuators and, under control from the camera head control unit 11405, moves the zoom lens and focus lens of the lens unit 11401 along the optical axis by a predetermined distance. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted as appropriate.

[0131] The communication unit 11404 consists of communication devices for sending and receiving various types of information with the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

[0132] Furthermore, the communication unit 11404 receives control signals from the CCU 11201 to control the drive of the camera head 11102 and supplies them to the camera head control unit 11405. These control signals include information regarding imaging conditions, such as information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image.

[0133] The imaging conditions such as frame rate, exposure value, magnification, and focus may be specified by the user as appropriate, or they may be automatically set by the control unit 11413 of the CCU11201 based on the acquired image signal. In the latter case, the endoscope 11100 will be equipped with so-called AE (Auto Exposure), AF (Auto Focus), and AWB (Auto White Balance) functions.

[0134] The camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal received from the CCU 11201 via the communication unit 11404.

[0135] The communication unit 11411 consists of a communication device for sending and receiving various types of information with the camera head 11102. The communication unit 11411 receives image signals transmitted from the camera head 11102 via the transmission cable 11400.

[0136] Furthermore, the communication unit 11411 transmits control signals to the camera head 11102 to control the driving of the camera head 11102. Image signals and control signals can be transmitted via telecommunications, optical communications, etc.

[0137] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102.

[0138] The control unit 11413 performs various controls related to imaging the surgical area, etc., by the endoscope 11100, and the display of the images obtained from imaging the surgical area, etc. For example, the control unit 11413 generates control signals to control the driving of the camera head 11102.

[0139] Furthermore, the control unit 11413 displays the captured image showing the surgical area on the display device 11202 based on the image signal processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical instruments such as forceps, specific biological sites, bleeding, mist when using the energy treatment device 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When the control unit 11413 displays the captured image on the display device 11202, it may use the recognition results to superimpose various surgical support information onto the image of the surgical area. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can proceed with the surgery with confidence.

[0140] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable compatible with electrical signal communication, an optical fiber compatible with optical communication, or a composite cable thereof.

[0141] In the illustrated example, communication was performed via a wired connection using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.

[0142] <Examples of applications to mobile devices> The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein may be implemented as a device mounted on any type of mobile vehicle, such as an automobile, electric vehicle, hybrid electric vehicle, motorcycle, bicycle, personal mobility device, airplane, drone, ship, or robot.

[0143] Figure 23 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology described herein may be applied.

[0144] The vehicle control system 12000 comprises multiple electronic control units connected via a communication network 12001. In the example shown in Figure 23, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. The functional configuration of the integrated control unit 12050 is shown in the figure, which includes a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface 12053.

[0145] The drivetrain control unit 12010 controls the operation of devices related to the vehicle's drivetrain according to various programs. For example, the drivetrain control unit 12010 functions as a control device for a drivetrain generating device that generates driving force for the vehicle, such as an internal combustion engine or a drive motor; a drivetrain transmission mechanism that transmits driving force to the wheels; a steering mechanism that adjusts the steering angle of the vehicle; and a braking device that generates braking force for the vehicle.

[0146] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window system, or various lamps such as headlights, reverse lights, brake lights, turn signals, or fog lights. In this case, the body system control unit 12020 may receive radio waves transmitted from a portable device that replaces a key or signals from various switches. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock system, power window system, lamps, etc.

[0147] The external information detection unit 12030 detects information from outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the external information detection unit 12030. The external information detection unit 12030 causes the imaging unit 12031 to capture images of the outside of the vehicle and receives the captured images. Based on the received images, the external information detection unit 12030 may perform object detection processing such as detecting people, cars, obstacles, signs, or characters on the road surface, or distance detection processing.

[0148] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0149] The in-vehicle information detection unit 12040 detects information inside the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver status detection unit 12041 that detects the driver's state. The driver status detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 may calculate the driver's level of fatigue or concentration, or determine whether the driver is drowsy, based on the detection information input from the driver status detection unit 12041.

[0150] The microcomputer 12051 can calculate control target values ​​for the drive force generator, steering mechanism, or braking system based on information from inside and outside the vehicle acquired by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing ADAS (Advanced Driver Assistance System) functions, including collision avoidance or impact mitigation, following based on distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

[0151] Furthermore, the microcomputer 12051 can perform cooperative control for purposes such as autonomous driving, where the vehicle drives autonomously without driver intervention, by controlling the drive force generating device, steering mechanism, or braking device, etc., based on information about the vehicle's surroundings acquired by the external information detection unit 12030 or the internal information detection unit 12040.

[0152] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12030 based on external information acquired by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights according to the position of a preceding or oncoming vehicle detected by the external information detection unit 12030, and perform coordinated control aimed at reducing glare, such as switching from high beams to low beams.

[0153] The audio-image output unit 12052 transmits at least one of audio and image output signals to an output device capable of visually or audibly notifying information to the vehicle's occupants or to those outside the vehicle. In the example shown in Figure 23, the output devices are exemplified as an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display.

[0154] Figure 24 shows an example of the installation position of the imaging unit 12031.

[0155] In Figure 24, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0156] The imaging units 12101, 12102, 12103, 12104, and 12105 are installed, for example, on the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle 12100. The imaging unit 12101 installed on the front nose and the imaging unit 12105 installed on the upper part of the windshield inside the vehicle mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 installed on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 installed on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 installed on the upper part of the windshield inside the vehicle is mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes.

[0157] Figure 24 shows an example of the imaging range of imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of imaging unit 12101 located on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of imaging units 12102 and 12103 located on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of imaging unit 12104 located on the rear bumper or back door. For example, by superimposing the image data captured by imaging units 12101 to 12104, an overhead view image of the vehicle 12100 can be obtained.

[0158] At least one of the imaging units 12101 to 12104 may have a function for acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple image sensors, or an image sensor having pixels for phase difference detection.

[0159] For example, the microcomputer 12051, based on distance information obtained from imaging units 12101 to 12104, can determine the distance to each object within the imaging range 12111 to 12114 and the temporal change of this distance (relative speed to vehicle 12100). In particular, it can extract the nearest object on the vehicle 12100's path that is traveling in approximately the same direction as vehicle 12100 at a predetermined speed (e.g., 0 km / h or more) as the preceding vehicle. Furthermore, the microcomputer 12051 can set a predetermined distance to be maintained before the preceding vehicle and perform automatic braking control (including follow-and-stop control) and automatic acceleration control (including follow-and-start control), etc. In this way, cooperative control aimed at autonomous driving, where the vehicle drives autonomously without driver intervention, can be performed.

[0160] For example, the microcomputer 12051 can use distance information obtained from imaging units 12101 to 12104 to classify and extract three-dimensional object data related to three-dimensional objects, such as motorcycles, passenger cars, heavy vehicles, pedestrians, utility poles, and other three-dimensional objects, and use this data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle. If the collision risk is above a set value and there is a possibility of collision, the microcomputer 12051 can provide driving assistance to avoid collisions by outputting a warning to the driver via the audio speaker 12061 or display unit 12062, or by performing forced deceleration or evasive steering via the drive system control unit 12010.

[0161] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 can recognize pedestrians by determining whether or not pedestrians are present in the images captured by the imaging units 12101 to 12104. Such pedestrian recognition is performed, for example, by a procedure to extract feature points from the images captured by the imaging units 12101 to 12104 as infrared cameras, and a procedure to perform pattern matching on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the imaging units 12101 to 12104 and recognizes a pedestrian, the audio-image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio-image output unit 12052 may also control the display unit 12062 to display an icon indicating a pedestrian at a desired position.

[0162] In this specification, "system" refers to an entire apparatus composed of multiple devices.

[0163] Furthermore, the effects described herein are merely illustrative and not limiting, and other effects may also occur.

[0164] It should be noted that the embodiments of this technology are not limited to those described above, and various modifications are possible without departing from the spirit of this technology.

[0165] Furthermore, this technology can also be configured as follows. (1) The first substrate and The second circuit board, A wiring layer located between the first substrate and the second substrate, A slit that penetrates the first substrate and reaches the wiring layer and A semiconductor device equipped with a semiconductor device. (2) The wiring layer has a gap connected to the slit. The semiconductor device described in (1) above. (3) The aforementioned void is provided for each wire provided in the wiring layer. The semiconductor device described in (2) above. (4) The aforementioned void includes a plurality of wires provided in the wiring layer. The semiconductor device described in (2) above. (5) The aforementioned void is provided throughout the entire region in which wiring is formed within the wiring layer. The semiconductor device described in (2) above. (6) The wiring provided in the wiring layer is connected to electrodes that penetrate the first substrate. A semiconductor device according to any one of (1) to (5) above. (7) The wiring located within the aforementioned gap is dummy wiring. A semiconductor device according to any one of (2) to (6) above. (8) The dummy wiring is connected to an electrode that penetrates the first substrate. The semiconductor device described in (7) above. (9) The shape of the slit is one of a linear shape, a polygonal shape, or a circular shape. A semiconductor device according to any one of (1) to (8) above. (10) A first chip including the first substrate and a second chip including the second substrate are stacked together. The aforementioned wiring layer is a layer in which a first wiring layer included in the first chip and a second wiring layer included in the second chip are connected. The first wiring, which is configured in the first wiring layer, is located within the gap. A semiconductor device according to any one of (1) to (9) above. (11) The second wiring, which is configured in the second wiring layer, is also located within the gap. The semiconductor device described in (10) above. (12) The second chip is a solid-state image sensor. The semiconductor device described in (10) above. (13) A first chip on which a solid-state image sensor is formed, A second chip that processes signals from the first chip, A wiring layer in which a first wiring layer included in the first chip and a second wiring layer included in the second chip are connected, A gap provided in a part of the aforementioned wiring layer, A slit that penetrates the second chip connected to the aforementioned gap and An imaging device equipped with the following features. [Explanation of Symbols]

[0166] 11 Semiconductor device, 21,22 Chip, 23 Insulating film, 24 Through hole, 25 Redistribution, 26 Solder ball, 27 Slit, 28 Stopper film, 31 Lower substrate, 32 Lower wiring layer, 33,34 Wiring, 35 Interlayer insulating film, 41 Upper substrate, 42 Upper wiring layer, 43,44 Wiring, 45 Interlayer insulating film, 51 Gap, 52 Wiring, 61 Dummy wiring, 300 Image sensor, 301 On-chip lens, 302 Adhesive, 303 Transparent substrate

Claims

1. The first substrate and The second circuit board, A wiring layer located between the first substrate and the second substrate, The slit that penetrates the first substrate and reaches the wiring layer and Equipped with, The wiring layer has a gap connected to the slit. Semiconductor equipment.

2. The aforementioned void is provided for each wire provided in the wiring layer. The semiconductor device according to claim 1.

3. The aforementioned void includes a plurality of wires provided in the wiring layer. The semiconductor device according to claim 1.

4. The aforementioned void is provided throughout the entire region in which wiring is formed within the wiring layer. The semiconductor device according to claim 1.

5. The wiring provided in the wiring layer is connected to electrodes that penetrate the first substrate. The semiconductor device according to claim 1.

6. The wiring located within the aforementioned gap is dummy wiring. The semiconductor device according to claim 1.

7. The dummy wiring is connected to an electrode that penetrates the first substrate. The semiconductor device according to claim 6.

8. The shape of the slit is one of a linear shape, a polygonal shape, or a circular shape. The semiconductor device according to claim 1.

9. A first chip including the first substrate and a second chip including the second substrate are stacked together. The aforementioned wiring layer is a layer in which a first wiring layer included in the first chip and a second wiring layer included in the second chip are connected. The first wiring configured in the first wiring layer is located within the gap. The semiconductor device according to claim 1.

10. The second wiring, which is configured in the second wiring layer, is also located within the gap. The semiconductor device according to claim 9.

11. The second chip is a solid-state image sensor. The semiconductor device according to claim 9.

12. A first chip on which a solid-state image sensor is formed, A second chip that processes signals from the first chip, A wiring layer in which a first wiring layer included in the first chip and a second wiring layer included in the second chip are connected, A gap provided in a part of the aforementioned wiring layer, A slit that penetrates the second chip connected to the aforementioned gap and An imaging device equipped with the following features.

Images