Semiconductor equipment

Abstract

To provide a semiconductor device including a transistor with an oxide semiconductor, whose electric characteristics less vary, reliability is high, and on-state current is large.SOLUTION: A semiconductor device uses a first region 101 of an insulating layer 103 with a large oxygen release amount as an insulating layer which is in contact with a channel region 126 of an oxide semiconductor layer 106, and uses a second region 102 of the insulating layer with a small oxygen release amount as an insulating layer which is in contact with a source region 122a and a drain region 122b of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase in resistance of the source region and the drain region.SELECTED DRAWING: Figure 1

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