Semiconductor equipment

Abstract

To provide a semiconductor device capable of preventing electronic components mounted side by side on the same lead from being in contact with one another.SOLUTION: A semiconductor device A10 includes: a first lead 3; a first semiconductor element 11 mounted on the first lead 3; and a sealing resin 7 that covers the first semiconductor element 11. The first lead 3 includes: a first die pad 31 having a main surface 311 and a back surface 312 facing opposite sides to each other in a z direction; a second die pad 32 arranged side by side with the first die pad 31 in an x direction, and located on a side of the main surface 311 with respect to the first die pad 31 in the z direction; and a connecting portion 33 connected to the first die pad 31 and the second die pad 32. The back surface 312 is exposed from the sealing resin 7.SELECTED DRAWING: Figure 9

Description

Technical Field

[0001] This disclosure relates to a semiconductor device.

Background Art

[0002] As one of various electronic devices, there is a semiconductor device using a lead frame. In the semiconductor device, there is a multi-chip device in which a plurality of semiconductor elements are arranged side by side on the same lead. Patent Document 1 discloses an example of a semiconductor device that is a conventional multi-chip device. The semiconductor device described in Patent Document 1 includes a plurality of semiconductor chips, a lead frame, and a resin. The plurality of semiconductor chips are mounted side by side on the islands of the lead frame. Each pad of the semiconductor chip and each lead terminal of the lead frame are electrically connected by wires. The plurality of semiconductor chips are sealed with resin. In this semiconductor device, since a plurality of semiconductor chips are mounted side by side on the same island, there is a possibility that the semiconductor chips are manufactured in a state where they are in contact with each other. Further, not limited to semiconductor chips, when a plurality of electronic components (including semiconductor chips) are mounted side by side on the same lead, there is a possibility that the electronic components come into contact with each other.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In view of the above circumstances, an object of the present invention is to provide a semiconductor device capable of suppressing contact between electronic components mounted side by side on the same lead.

Means for Solving the Problems

[0005] A semiconductor device provided by this disclosure comprises a first lead, a first semiconductor element mounted on the first lead, and a sealing resin covering the first semiconductor element, wherein the first lead comprises a first die pad having a first main surface and a first back surface facing opposite directions in the thickness direction, a second die pad arranged alongside the first die pad in a first direction perpendicular to the thickness direction and located on the first main surface side relative to the first die pad in the thickness direction, and a connecting portion connecting the first die pad and the second die pad, and the first back surface is exposed from the sealing resin. [Effects of the Invention]

[0006] According to this disclosure, it is possible to suppress contact between the electronic component mounted on the first die pad of the first lead and the electronic component mounted on the second die pad.

[0007] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a perspective view showing a semiconductor device according to the first embodiment of this disclosure. [Figure 2] Figure 2 is a perspective view of the semiconductor device shown in Figure 1, with the sealing resin transparent and parts of each second lead omitted. [Figure 3] Figure 3 is a plan view of the semiconductor device shown in Figure 1, and is a view through the sealing resin. [Figure 4] Figure 4 is a bottom view showing the semiconductor device of Figure 1. [Figure 5] Figure 5 is a front view showing the semiconductor device of Figure 1. [Figure 6] Figure 6 is a right side view showing the semiconductor device of Figure 1. [Figure 7] Figure 7 is a cross-sectional view along the line VII-VII in Figure 3. [Figure 8] Figure 8 is a cross-sectional view along the line VIII-VIII in Figure 3. [Figure 9] Figure 9 is a cross-sectional view taken along line IX-IX of Figure 3. [Figure 10] Figure 10 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure, and is a view through the encapsulating resin. [Figure 11] Figure 11 is a cross-sectional view taken along line XI-XI of Figure 10. [Figure 12] Figure 12 is a partially enlarged view of Figure 11. [Figure 13] Figure 13 is a cross-sectional view showing a semiconductor device according to a first modification of the second embodiment of the present disclosure. [Figure 14] Figure 14 is a partially enlarged view of Figure 13. [Figure 15] Figure 15 is a cross-sectional view showing a semiconductor device according to a second modification of the second embodiment of the present disclosure. [Figure 16] Figure 16 is a partially enlarged view of Figure 15. [Figure 17] Figure 17 is a bottom view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 18] Figure 18 is a cross-sectional view showing the semiconductor device of Figure 17. [Figure 19] Figure 19 is a cross-sectional view showing the semiconductor device of Figure 17. [Figure 20] Figure 20 is a cross-sectional view showing a semiconductor device according to a first modification of the third embodiment of the present disclosure. [Figure 21] Figure 21 is a plan view showing a semiconductor device according to a fourth embodiment of the present disclosure, and is a view through the encapsulating resin. [Figure 22] Figure 22 is a cross-sectional view showing a semiconductor device according to a fifth embodiment of the present disclosure.

MODE FOR CARRYING OUT THE INVENTION

[0009] Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the accompanying drawings.

[0010] In the present disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed over a certain object B" include "a certain object A is directly formed on a certain object B" and "a certain object A is formed on a certain object B with another object intervening between the certain object A and the certain object B". Similarly, unless otherwise specified, "a certain object A is disposed on a certain object B" and "a certain object A is disposed over a certain object B" include "a certain object A is directly disposed on a certain object B" and "a certain object A is disposed on a certain object B with another object intervening between the certain object A and the certain object B". Similarly, unless otherwise specified, "a certain object A is located over a certain object B" includes "a certain object A is in contact with a certain object B and a certain object A is located over a certain object B" and "a certain object A is located over a certain object B with another object intervening between the certain object A and the certain object B". Further, unless otherwise specified, "a certain object A overlaps a certain object B when viewed in a certain direction" includes "a certain object A overlaps all of a certain object B" and "a certain object A overlaps a part of a certain object B".

[0011] <First Embodiment> FIGS. 1 to 9 show an example of a semiconductor device according to the present disclosure. The semiconductor device A10 of the present embodiment includes a first semiconductor element 11, a second semiconductor element 12, a conductive support member 2, wires 61, 62, 63, metal layers 65, 66, bonding layers 68, 69, and a sealing resin 7. The conductive support member 2 includes a first lead 3 and a plurality of second leads 4. The use and function of the semiconductor device A10 are not limited. In the present embodiment, the package form of the semiconductor device A10 is an SOP (Small Outline Package). However, the package form of the semiconductor device A10 is not limited to an SOP.

[0012] Figure 1 is a perspective view of semiconductor device A10. Figure 2 is a perspective view of semiconductor device A10. In Figure 2, for ease of understanding, the outline of the sealing resin 7 is shown as dashed lines (double dot lines) by passing through the sealing resin 7. Also in Figure 2, for ease of understanding, a portion of each second lead 4 is omitted. Figure 3 is a plan view of semiconductor device A10. In Figure 3, for ease of understanding, the outline of the sealing resin 7 is shown as dashed lines (double dot lines) by passing through the sealing resin 7. Figure 4 is a bottom view of semiconductor device A10. Figure 5 is a front view of semiconductor device A10. Figure 6 is a right side view of semiconductor device A10. Figure 7 is a cross-sectional view along line VII-VII in Figure 3. Figure 8 is a cross-sectional view along line VIII-VIII in Figure 3. Figure 9 is a cross-sectional view along line IX-IX in Figure 3.

[0013] The semiconductor device A10 has a long rectangular shape when viewed in the thickness direction (plan view). For the sake of explanation, the thickness direction (plan view direction) of the semiconductor device A10 is defined as the z direction, the direction along the long side of the semiconductor device A10 perpendicular to the z direction (up and down direction in Figures 3 and 4) is defined as the x direction, and the direction perpendicular to the z and x directions (left and right direction in Figures 3 and 4) is defined as the y direction. Furthermore, one side in the z direction (the lower side in Figures 5 and 6) is defined as the z1 side, and the other side (the upper side in Figures 5 and 6) is defined as the z2 side. One side in the x direction (the lower side in Figure 3) is defined as the x1 side, and the other side (the upper side in Figure 3) is defined as the x2 side. One side in the y direction (the left side in Figures 3 and 4) is defined as the y1 side, and the other side (the right side in Figures 3 and 4) is defined as the y2 side. The z direction corresponds to the "thickness direction" in this disclosure, and the x direction corresponds to the "first direction" in this disclosure. The shape and dimensions of semiconductor device A10 are not limited.

[0014] The conductive support member 2 is a component that constitutes a conductive path between the first semiconductor element 11 and the second semiconductor element 12 and the wiring board on which the semiconductor device A10 is mounted in the semiconductor device A10. The conductive support member 2 is made of an alloy containing Cu in its composition, for example. The material of the conductive support member 2 is not limited and may be Cu, Ni, or an alloy containing these in its composition. The conductive support member 2 is formed from a lead frame, which will be described later. The conductive support member 2 mounts the first semiconductor element 11 and the second semiconductor element 12. As shown in Figure 3, the conductive support member 2 includes a first lead 3 and a plurality of second leads 4.

[0015] The first lead 3 is positioned in the center of the semiconductor device A10 in the y-direction. The first lead 3 also extends across the entire semiconductor device A10 in the x-direction. The first lead 3 is mounted on the first semiconductor element 11 and the second semiconductor element 12. The first lead 3 comprises a first die pad 31, a second die pad 32, a connecting portion 33, and fixing portions 34, 35.

[0016] The first die pad 31 is positioned on the first lead 3, closer to the x1 side in the x-direction than the center in the x-direction. The first die pad 31 has a rectangular shape when viewed in the z-direction. The first die pad 31 has a main surface 311 and a back surface 312. The main surface 311 and the back surface 312 are spaced apart in the z-direction, as shown in Figures 7 and 9. The main surface 311 faces the z2 side, and the back surface 312 faces the z1 side. The main surface 311 and the back surface 312 are both substantially flat. The first semiconductor element 11 is mounted on the main surface 311. The back surface 312 is exposed from the sealing resin 7 and serves as a back surface terminal, which is joined to the wiring board on which the semiconductor device A10 is mounted.

[0017] As shown in Figure 3, a metal layer 65 is arranged on the main surface 311. The metal layer 65 covers the portion on which the first semiconductor element 11 is mounted. In this embodiment, the metal layer 65 is rectangular in shape when viewed in the z direction and is located in the center of the main surface 311. The metal layer 65 is contained within the main surface 311 when viewed in the z direction. In other words, the metal layer 65 does not extend to each edge of the main surface 311. The metal layer 65 is formed, for example, by a plating process. The metal layer 65 contains, for example, Ag. The metal layer 65 only needs to be made of a material with better solder wettability than the material of the first die pad 31. In addition to Ag, other materials such as Ni can be considered for the metal layer 65. In this embodiment, since the material of the first die pad 31 is a Cu alloy, the metal layer 65 may be made of Cu with better solder wettability than this. Furthermore, the metal layer 65 is not limited to being a single layer, but may be made of multiple metal layers stacked together. For example, the metal layer 65 may be made up of Ni, Pd, and Au stacked in that order.

[0018] The second die pad 32 is positioned on the first lead 3, closer to the x2 side in the x-direction than the center in the x-direction. The second die pad 32 is positioned alongside the first die pad 31 in the x-direction. In the z-direction, the second die pad 32 is positioned differently from the first die pad 31. Specifically, in the z-direction, the second die pad 32 is positioned on the main surface 311 side (z2 side in the z-direction) relative to the first die pad 31. The second die pad 32 has a rectangular shape when viewed in the z-direction. The second die pad 32 has a main surface 321 and a back surface 322. The main surface 321 and the back surface 322 are spaced apart in the z-direction, as shown in Figures 8 and 9. The main surface 321 faces the z2 side, and the back surface 322 faces the z1 side. The main surface 321 and the back surface 322 are both approximately flat. The second semiconductor element 12 is mounted on the main surface 321. The back surface 322 is not exposed from the sealing resin 7. The second die pad 32 is entirely covered by the sealing resin 7. In this embodiment, in a view in the z direction, the first die pad 31 and the second die pad 32 are of similar size, and the area of ​​the main surface 311 and the area of ​​the main surface 321 are of similar size.

[0019] As shown in Figure 3, a metal layer 66 is arranged on the main surface 321. The metal layer 66 covers the portion on which the second semiconductor element 12 is mounted. In this embodiment, the metal layer 66 is rectangular in shape when viewed in the z direction and is located in the center of the main surface 321. The metal layer 66 is contained within the main surface 321 when viewed in the z direction. In other words, the metal layer 66 does not extend to each edge of the main surface 321. The metal layer 66 is formed, for example, by a plating process. The material of the metal layer 66 is the same as that of the metal layer 65.

[0020] The connecting portion 33 is positioned between the first die pad 31 and the second die pad 32 in the x-direction and connects to the first die pad 31 and the second die pad 32. The connecting portion 33 is inclined with respect to the first die pad 31 and the second die pad 32. The connecting portion 33 has a rectangular shape when viewed in the z-direction. The connecting portion 33 has a main surface 331 and a back surface 332. The main surface 331 and the back surface 332 face opposite each other, as shown in Figure 9. The main surface 331 and the back surface 332 are each substantially flat. The main surface 331 connects to the main surface 311 of the first die pad 31 and the main surface 321 of the second die pad 32. The back surface 332 connects to the back surface 312 of the first die pad 31 and the back surface 322 of the second die pad 32. The entire connecting portion 33 is covered with sealing resin 7. The first die pad 31, the second die pad 32, and the connecting portion 33 are, as a whole, elongated rectangular in shape when viewed in the z direction, and are formed by machining the elongated rectangular portion of the lead frame.

[0021] The fixing portions 34 and 35 are parts for fixing the first lead 3 to the lead frame. As shown in Figure 3, the fixing portion 34 is rectangular in length in the z direction and extends in the x direction. The end of the fixing portion 34 on the x2 side in the x direction is connected to the end of the first die pad 31 on the x1 side in the x direction. The end of the fixing portion 34 on the x1 side in the x direction is exposed from the sealing resin 7. As shown in Figures 1, 2, 5, and 9, the fixing portion 34 has an end face 341. The end face 341 is the surface facing the x1 side in the x direction and is exposed from the sealing resin 7. The end face 341 is the surface created when the first lead 3 is separated from the lead frame by dicing in the manufacturing process. In this embodiment, as shown in Figure 9, the fixing portion 34 also has a parallel portion 342 and an inclined portion 343. The parallel portion 342 has an end face 341 and extends parallel to the first die pad 31. The parallel portion 342 is positioned on the z-direction z2 side of the first die pad 31. The inclined portion 343 is connected to the parallel portion 342 and the first die pad 31, and extends at an inclination relative to the parallel portion 342 and the first die pad 31.

[0022] As shown in Figure 3, the fixing portion 35 is rectangular in length in the z direction and extends in the x direction. The end of the fixing portion 35 on the x1 side in the x direction is connected to the end of the second die pad 32 on the x2 side in the x direction. The end of the fixing portion 35 on the x2 side in the x direction is exposed from the sealing resin 7. As shown in Figure 9, the fixing portion 35 has an end face 351. The end face 351 is the surface facing the x2 side in the x direction and is exposed from the sealing resin 7. The end face 351 is the surface created when the first lead 3 is separated from the lead frame by dicing in the manufacturing process. In this embodiment, as shown in Figure 9, the fixing portion 35 also has a parallel portion 352 and an inclined portion 353. The parallel portion 352 has an end face 351 and extends parallel to the second die pad 32. The parallel portion 352 is positioned on the z2 side in the z direction from the second die pad 32. The inclined portion 353 is connected to the parallel portion 352 and the second die pad 32, and extends inclined relative to the parallel portion 352 and the second die pad 32.

[0023] Multiple second leads 4 are components that constitute a conductive path between the semiconductor device A10 and the wiring board on which the semiconductor device A10 is mounted, by being joined to the wiring board on which the semiconductor device A10 is mounted. Each second lead 4 is appropriately electrically connected to the first semiconductor element 11 or the second semiconductor element 12. In this embodiment, the semiconductor device A10 has eight second leads 4. As shown in Figures 3 and 4, four second leads 4 are arranged on the y1 side in the y direction relative to the first lead 3. These four second leads 4 are spaced apart from each other and arranged at equal intervals along the x direction. These four second leads 4 also protrude from the sealing resin 7 (side surface 73, described later) on the y1 side in the y direction. As shown in Figures 3 and 4, the other four second leads 4 are arranged on the y2 side in the y direction relative to the first lead 3. These four second leads 4 are spaced apart from each other and arranged at equal intervals along the x direction. Furthermore, the four second leads 4 protrude from the sealing resin 7 (side surface 74, described later) toward the y-direction y2. The number of second leads 4 is not limited. Also, some of the second leads 4 may be electrically connected to the first leads 3. In addition, the conductive support member 2 may include second leads 4 that are not electrically connected to any of the first leads 3.

[0024] Each second lead 4 is provided with a pad portion 41 and a terminal portion 42. The terminal portion 42 is rectangular in length in the z direction and extends along the y direction, and includes a portion that protrudes from the sealing resin 7 and a portion that is covered by the sealing resin 7. As shown in Figures 7 and 8, the portion of the terminal portion 42 that protrudes from the sealing resin 7 is bent into a gull-wing shape. The portion of the terminal portion 42 that protrudes from the sealing resin 7 may also be plated. The plating layer formed by this plating process is made of an alloy containing Sn, such as solder, and covers the portion that protrudes from the sealing resin 7. When the semiconductor device A10 is surface-mounted onto a wiring board by soldering, this plating layer ensures good adhesion of solder to the protruding portion while preventing erosion of the protruding portion caused by soldering.

[0025] Each pad portion 41 is connected to the portion of the terminal portion 42 covered by the sealing resin 7. The shape of the pad portion 41 in the z direction is not limited, but in this embodiment it is an elongated rectangle that is long in the x direction. The upper surface of the pad portion 41 (the surface facing the z2 side) is substantially flat and to which the wire 62 or wire 63 is bonded. The upper surface of the pad portion 41 may be plated. The plating layer formed by this plating process is made of a metal containing Ag, for example, and covers the upper surface of the pad portion 41. This plating layer increases the bonding strength of the wires 62 and 63 while protecting the lead frame from impact during wire bonding of the wires 62 and 63. The entire pad portion 41 is covered by the sealing resin 7. As shown in Figure 2, the pad portion 41 is located in the z direction at the same position as the parallel portion 342 of the fixing portion 34 and the parallel portion 352 of the fixing portion 35 of the first lead 3, and is located on the z2 side in the z direction relative to the first die pad 31 and the second die pad 32.

[0026] The first semiconductor element 11 and the second semiconductor element 12 are the core elements of the semiconductor device A10.

[0027] The first semiconductor element 11 is a switching element, and in this embodiment, it is a power MOSFET (metal-oxide-semiconductor field-effect transistor). However, the first semiconductor element 11 may be other transistors such as an IGBT (Insulated Gate Bipolar Transistor) or a HEMT (High Electron Mobility Transistor), and its type and internal structure are not limited.

[0028] As shown in Figures 7 and 9, the first semiconductor device 11 comprises a main surface 111 and a back surface 112. The main surface 111 and the back surface 112 are spaced apart in the z direction. The main surface 111 faces the z2 side, and the back surface 112 faces the z1 side. A source electrode and a gate electrode (not shown) are arranged on the main surface 111. A drain electrode (not shown) is arranged on the back surface 112.

[0029] As shown in Figures 3, 7, and 9, the first semiconductor element 11 is mounted in the center of the main surface 311 of the first die pad 31 via a bonding layer 68. In other words, the bonding layer 68 is interposed between the main surface 311 and the first semiconductor element 11. In this embodiment, the bonding layer 68 is conductive and is, for example, solder. The bonding layer 68 may also be a solidified metal paste such as silver paste, or a sintered metal such as sintered silver. The back surface 112 of the first semiconductor element 11 is bonded to a metal layer 65 located on the main surface 311 by the bonding layer 68. The drain electrode of the first semiconductor element 11 is electrically connected to the first die pad 31 via the bonding layer 68 and the metal layer 65. As a result, the first die pad 31 (first lead 3) is electrically connected to the drain electrode of the first semiconductor element 11 and functions as a drain terminal.

[0030] The source electrode of the first semiconductor element 11 (not shown) is electrically connected to the second lead 4 via wire 62, as shown in Figure 3. As a result, the second lead 4, which is electrically connected to the source electrode, functions as a source terminal or a sense source terminal. The sense source terminal is a terminal for detecting the potential of the source electrode. Furthermore, the gate electrode of the first semiconductor element 11 (not shown) is electrically connected to the second semiconductor element 12 via wire 61, as shown in Figure 3. A drive signal is input to the gate electrode from the second semiconductor element 12 via wire 61.

[0031] The second semiconductor element 12 is a driving element for driving the first semiconductor element 11. The second semiconductor element 12 generates a driving signal based on an externally input control signal and outputs it to the first semiconductor element 11.

[0032] As shown in Figures 8 and 9, the second semiconductor device 12 comprises a main surface 121 and a back surface 122. The main surface 121 and the back surface 122 are spaced apart in the z direction. The main surface 121 faces the z2 side, and the back surface 122 faces the z1 side. Multiple electrodes (not shown) are arranged on the main surface 121. These electrodes include, for example, a power supply electrode to which voltage is supplied, a ground electrode, an input electrode to which control signals are input, and an output electrode to which generated drive signals are output. No electrodes are arranged on the back surface 122.

[0033] As shown in Figures 3, 8, and 9, the second semiconductor element 12 is mounted in the center of the main surface 321 of the second die pad 32 via a bonding layer 69. In other words, the bonding layer 69 is interposed between the main surface 321 and the second semiconductor element 12. In this embodiment, the bonding layer 69 is, for example, solder. The bonding layer 69 may also be a solidified metal paste, sintered metal, or an insulating bonding layer. The back surface 122 of the second semiconductor element 12 is bonded to a metal layer 66 located on the main surface 321 by the bonding layer 69. Each electrode of the second semiconductor element 12 (not shown) is electrically connected to the second lead 4 via a wire 63, as shown in Figure 3. The second lead 4 that is electrically connected to the power electrode functions as a power terminal, the second lead 4 that is electrically connected to the ground electrode functions as a ground terminal, and the second lead 4 that is electrically connected to the input electrode functions as an input terminal. Furthermore, the output electrode of the second semiconductor element 12 (not shown) is electrically connected to the gate electrode of the first semiconductor element 11 (not shown) via wire 61, as shown in Figure 3. The second semiconductor element 12 outputs the generated drive signal from its output electrode and inputs it to the gate electrode of the first semiconductor element 11 via wire 61.

[0034] As shown in Figure 3, wires 61-63, together with the conductive support member 2, constitute a conductive path for the first semiconductor element 11 and the second semiconductor element 12 to perform their predetermined functions. The material of each of the wires 61-63 is, for example, a metal containing Au, Ag, Cu, or Al. However, the material of wires 61-63 is not limited. Alternatively, metal plates or metal ribbons may be used instead of wires 61-63.

[0035] Wire 61 is connected to the gate electrode of the first semiconductor element 11 and the output electrode of the second semiconductor element 12, forming a conductive path for inputting the drive signal output from the output electrode of the second semiconductor element 12 to the gate electrode of the first semiconductor element 11. The number of wires 61 is not limited. Multiple wires 62 form a conductive path between the first semiconductor element 11 and multiple second leads 4. Each of the multiple wires 62 is connected to one of the electrodes of the first semiconductor element 11 and one of the pad portions 41 of the second leads 4. The number of wires 62 connecting each electrode and each second lead 4 is not limited. Multiple wires 63 form a conductive path between the second semiconductor element 12 and multiple second leads 4. Each of the multiple wires 63 is connected to one of the electrodes of the second semiconductor element 12 and one of the pad portions 41 of the second leads 4. The number of wires 63 connecting each electrode and each second lead 4 is not limited.

[0036] The sealing resin 7 covers the first semiconductor element 11, the second semiconductor element 12, and the wires 61-63, as well as parts of the first lead 3 and the plurality of second leads 4. The sealing resin 7 is electrically insulating. The sealing resin 7 is made of a material including, for example, a black epoxy resin. The sealing resin 7 is rectangular in shape, elongated in the x-direction when viewed in the z-direction. The sealing resin 7 has a top surface 71, a bottom surface 72, and sides 73-76.

[0037] The top surface 71 and the bottom surface 72 are located apart from each other in the z direction. The top surface 71 and the bottom surface 72 face opposite each other in the z direction. The top surface 71 is located on the z2 side in the z direction and faces the z2 side, just like the main surface 311 of the first die pad 31. The bottom surface 72 is located on the z1 side in the z direction and faces the z1 side, just like the back surface 312 of the first die pad 31. Both the top surface 71 and the bottom surface 72 are substantially flat. As shown in Figure 4, the back surface 312 of the first die pad 31 of the first lead 3 is exposed from the bottom surface 72. The bottom surface 72 and the back surface 312 are flush with each other.

[0038] Each of the sides 73-76 is connected to the top surface 71 and the bottom surface 72, and is sandwiched between the top surface 71 and the bottom surface 72 in the z direction. Sides 73 and 74 are located apart from each other in the y direction. Sides 73 and 74 face opposite directions from each other in the y direction. Side 73 is located on the y1 side in the y direction, and side 74 is located on the y2 side in the y direction. Sides 75 and 76 are located apart from each other in the x direction, and are connected to sides 73 and 74. Sides 75 and 76 face opposite directions from each other in the x direction. Side 75 is located on the x1 side in the x direction, and side 76 is located on the x2 side in the x direction. Parts of the terminal portions 42 of the multiple second leads 4 protrude from side 73. Also, parts of the terminal portions 42 of the multiple second leads 4 protrude from side 74. Furthermore, as shown in Figures 1 and 9, the end face 341 of the fixing portion 34 of the first lead 3 is exposed from the side surface 75. Also, as shown in Figure 9, the end face 351 of the fixing portion 35 of the first lead 3 is exposed from the side surface 76.

[0039] Next, an example of a manufacturing method for semiconductor device A10 will be described.

[0040] First, a lead frame is prepared. The lead frame is made of a plate-shaped material. In this embodiment, the base material of the lead frame is made of a Cu alloy. The lead frame is formed by etching a metal plate or the like. Alternatively, the lead frame may be formed by punching a metal plate. In addition to the portion that becomes the conductive support member 2 (first lead 3 and a plurality of second leads 4), the lead frame includes a frame-shaped frame and a plurality of tie bars connecting the conductive support member 2 and the frame. The frame and tie bars do not constitute the semiconductor device A10. The lead frame includes the first die pad 31 of the first lead 3, the second die pad 32, and a long rectangular portion (hereinafter referred to as the "long rectangular portion") that becomes the connecting portion 33.

[0041] Next, the lead frame is depressed. In this embodiment, two depressing processes are performed. The first depressing process deforms the lead frame so that the elongated rectangular portion is located on the z1 side of the frame. At this time, the portion connecting the elongated rectangular portion to the frame is deformed to form the fixing portion 35. Next, the second depressing process deforms the elongated rectangular portion to form the second die pad 32, the first die pad 31 located on the z1 side of the second die pad 32, and the connecting portion 33 connected to the first die pad 31 and the second die pad 32. At this time, the portion connecting the first die pad 31 to the frame is deformed to form the fixing portion 34. Alternatively, the elongated rectangular portion may be deformed into the first die pad 31, the second die pad 32, and the connecting portion 33 in a single depressing process.

[0042] Next, a metal layer 65 is formed on the main surface 311 of the first die pad 31, for example by plating. Also, a metal layer 66 is formed on the main surface 321 of the second die pad 32, for example by plating.

[0043] Next, the first semiconductor element 11 is bonded to the metal layer 65 formed on the main surface 311 of the first die pad 31 via a bonding layer 68, and the second semiconductor element 12 is bonded to the metal layer 66 formed on the main surface 321 of the second die pad 32 via a bonding layer 69. In this bonding process, first, solder paste, which will become the bonding layers 68 and 69, is applied to the center of the metal layers 65 and 66, respectively. Next, the first semiconductor element 11 and the second semiconductor element 12 are placed on top of the applied solder paste. Then, a reflow process is performed to melt and solidify the solder paste. Since the metal layers 65 and 66 have better solder wettability than the lead frame, the molten solder paste is prevented from flowing beyond the boundary between the metal layers 65 and 66 and the lead frame.

[0044] Next, wires 61 to 63 are formed by wire bonding. Then, a sealing resin 7 is formed. The sealing resin 7 is formed, for example, by transfer molding. Next, dicing is performed to separate the first lead 3 and the multiple second leads 4, which were connected to each other by the frame and multiple tie bars, as appropriate. Next, the portions of the multiple second leads 4 that protrude from the sealing resin 7 are bent. By going through the above steps, the semiconductor device A10 is manufactured.

[0045] Next, we will explain the effects and benefits of semiconductor device A10.

[0046] According to this embodiment, the first lead 3 comprises a first die pad 31 and a second die pad 32. The second die pad 32 is positioned alongside the first die pad 31 in the x-direction, but at a different position from the first die pad 31 in the z-direction. The first semiconductor element 11 is mounted on the main surface 311 of the first die pad 31, and the second semiconductor element 12 is mounted on the main surface 321 of the second die pad 32. Therefore, the first semiconductor element 11 and the second semiconductor element 12 are mounted side by side in the x-direction on a common first lead 3, but at different positions in the z-direction. As a result, the semiconductor device A10 can suppress the possibility of the first semiconductor element 11 and the second semiconductor element 12 being mounted in contact with each other, compared to the case where the first semiconductor element 11 and the second semiconductor element 12 are positioned at the same position in the z-direction. Furthermore, the first semiconductor element 11 is mounted on the main surface 311 of the first die pad 31 via a bonding layer 68, and the second semiconductor element 12 is mounted on the main surface 321 of the second die pad 32 via a bonding layer 69. In semiconductor device A10, since the first die pad 31 and the second die pad 32 are positioned at different locations in the z-direction, contact between the bonding layer 68 and the bonding layer 69 can be suppressed compared to when they are positioned at the same location in the z-direction.

[0047] Furthermore, according to this embodiment, the back surface 312 of the first die pad 31 is exposed from the bottom surface 72 of the sealing resin 7. The back surface 312 is joined to the wiring board when the semiconductor device A10 is mounted on the wiring board. Therefore, the heat generated by the first semiconductor element 11 is released from the back surface 312 to the wiring board. As a result, the semiconductor device A10 can properly dissipate the heat of the first semiconductor element 11.

[0048] Furthermore, according to this embodiment, a metal layer 66 is interposed between the main surface 321 of the second die pad 32 and the second semiconductor element 12. The metal layer 66 is made of a material with better solder wettability than the material of the second die pad 32. Therefore, it is suppressed that the solder paste molten during manufacturing flows beyond the boundary between the metal layer 66 and the main surface 321. As a result, the semiconductor device A10 can suppress the flow of molten solder paste across the main surface 331 of the connecting portion 33. Furthermore, according to this embodiment, a metal layer 65 is interposed between the main surface 311 of the first die pad 31 and the first semiconductor element 11. The metal layer 65 is made of a material with better solder wettability than the material of the first die pad 31. Therefore, the semiconductor device A10 can suppress the flow of molten solder paste molten during manufacturing beyond the boundary between the metal layer 65 and the main surface 311.

[0049] In this embodiment, the case in which the metal layer 65 is positioned in the center of the main surface 311 and is contained within the main surface 311 when viewed in the z direction has been described, but the embodiment is not limited to this. The shape of the metal layer 65 is not limited, and it does not have to be contained within the main surface 311. For example, the metal layer 65 may cover the entire main surface 311. Also, the metal layer 65 may not be positioned at all. In this embodiment, the case in which the metal layer 66 is positioned in the center of the main surface 321 and is contained within the main surface 321 when viewed in the z direction has been described, but the embodiment is not limited to this. The shape of the metal layer 66 is not limited, and it does not have to be contained within the main surface 321. For example, the metal layer 66 may cover the entire main surface 321. Also, the metal layer 66 may not be positioned at all.

[0050] Furthermore, although this embodiment describes a case where the back surface 312 of the first die pad 31 is exposed from the bottom surface 72 of the sealing resin 7, it is not limited to this case. The back surface 312 does not have to be exposed from the bottom surface 72 of the sealing resin 7.

[0051] Furthermore, although this embodiment describes the case where the package format of semiconductor device A10 is SOP (Small Outline Package), it is not limited to this. The package format of semiconductor device A10 is not limited to SOP.

[0052] Furthermore, although this embodiment describes a case where the first semiconductor element 11 is a switching element and the second semiconductor element 12 is a driving element, it is not limited to this. The second semiconductor element 12 may be a switching element and the first semiconductor element 11 may be a driving element. In addition, the first semiconductor element 11 and the second semiconductor element 12 may be other semiconductor elements, or they may be electronic components other than semiconductor elements.

[0053] Furthermore, although this embodiment describes a case where only the first semiconductor element 11 is mounted on the first die pad 31 and only the second semiconductor element 12 is mounted on the second die pad 32, it is not limited to this. The first die pad 31 may have other semiconductor elements or electronic components mounted on it, or it may not have the first semiconductor element 11 mounted on it. Similarly, the second die pad 32 may have other semiconductor elements or electronic components mounted on it, or it may not have the second semiconductor element 12 mounted on it.

[0054] Figures 10 to 22 illustrate other embodiments of the present disclosure. In these figures, elements identical or similar to those in the above embodiments are denoted by the same reference numerals.

[0055] <Second Embodiment> Figures 10 to 12 are diagrams illustrating a semiconductor device A20 according to a second embodiment of the present disclosure. Figure 10 is a plan view of the semiconductor device A20 and corresponds to Figure 3. In Figure 10, for ease of understanding, the outer shape of the sealing resin 7 is shown by dashed lines (double-dot lines) through the sealing resin 7. Figure 11 is a cross-sectional view along the line XI-XI in Figure 10 and corresponds to Figure 9. Figure 12 is a partially enlarged view of Figure 11. The semiconductor device A20 of this embodiment differs from the first embodiment in that the connecting portion 33 has a groove. The configuration and operation of other parts of this embodiment are the same as in the first embodiment. Note that the parts of the first embodiment described above may be combined arbitrarily.

[0056] In this embodiment, the connecting portion 33 is provided with a groove 333. In Figure 10, the groove 333 is hatched for ease of understanding. The groove 333 is located near the center of the main surface 331 of the connecting portion 33 in the x-direction. The groove 333 is recessed from the main surface 331 of the connecting portion 33 toward the back surface 332 and extends along the y-direction. In this embodiment, the groove 333 extends to both ends of the main surface 331 in the y-direction. As shown in Figure 12, the y-direction view shape of the groove 333 is substantially rectangular. However, the y-direction view shape of the groove 333 is not limited and may be, for example, semicircular. The groove 333 is formed, for example, by half-etching when creating the lead frame. However, the method of forming the groove 333 is not limited. The groove 333 may be formed, for example, by stamping, so as to be recessed from the main surface 331.

[0057] The groove 333 is provided to obstruct the flow of molten solder paste during the reflow process in the manufacturing process. The solder paste for joining the second semiconductor element 12 to the lead frame is melted by the reflow process. At this time, the molten solder paste may flow beyond the boundary between the metal layer 66 and the lead frame, and flow out from the main surface 321 of the second die pad 32 to the main surface 331 of the connecting portion 33. The groove 333 is provided to obstruct the flow of molten solder paste that has flowed out onto the main surface 331 of the connecting portion 33 to the main surface 311 of the first die pad 31.

[0058] The depth dimension T2 of the groove 333 (dimension perpendicular to the main surface 331) is approximately 1 / 3 of the thickness dimension T1 of the connecting portion 33 (dimension perpendicular to the main surface 331). If dimension T2 is too large, the strength of the connecting portion 33 will be weakened. On the other hand, if dimension T2 is too small, the function of inhibiting the flow of molten solder paste will be reduced. Dimension T2 is preferably between 1 / 4 and 1 / 2 of dimension T1. However, dimension T2 is not limited. Dimension T2 can be appropriately determined depending on the dimension T1 of the connecting portion 33, the strength of the connecting portion 33, the placement position of the second semiconductor element 12 on the second die pad 32, and the amount of solder paste applied.

[0059] The grooves 333 only need to be able to obstruct the flow of the molten solder paste. The grooves 333 do not need to extend to both ends of the main surface 331 in the y-direction. The grooves 333 may also be dashed grooves arranged in the y-direction, with multiple grooves extending in the y-direction. Furthermore, the grooves 333 do not have to extend in a straight line, but may be curved, for example. The position of the grooves 333 is not limited to the vicinity of the center of the main surface 331 in the x-direction. Multiple grooves 333 may also be arranged side by side in the x-direction.

[0060] In this embodiment as well, since the second die pad 32 is positioned at a different location from the first die pad 31 in the z-direction, the first semiconductor element 11 and the second semiconductor element 12 are positioned at different locations in the z-direction. This prevents the semiconductor device A20 from being mounted with the first semiconductor element 11 and the second semiconductor element 12 in contact. Furthermore, the semiconductor device A20 can also prevent the bonding layer 68 and the bonding layer 69 from coming into contact. In addition, in this embodiment as well, since the back surface 312 of the first die pad 31 is exposed from the bottom surface 72 of the sealing resin 7, the semiconductor device A20 can properly dissipate heat from the first semiconductor element 11. In addition, in this embodiment as well, a metal layer 66 is interposed between the main surface 321 of the second die pad 32 and the second semiconductor element 12. Therefore, the semiconductor device A20 can prevent the solder paste molten during manufacturing from flowing across the boundary between the metal layer 66 and the main surface 321 and onto the main surface 331 of the connecting portion 33.

[0061] Furthermore, according to this embodiment, the connecting portion 33 is provided with a groove portion 333. The groove portion 333 prevents the molten solder paste from flowing from the main surface 321 of the second die pad 32 to the main surface 331 of the connecting portion 33, even if it flows out during manufacturing. Therefore, it is suppressed that some of the solder paste for joining the second semiconductor element 12 is added to the main surface 331 of the connecting portion 33, thereby increasing the amount of solder paste used to join the first semiconductor element 11. As a result, the semiconductor device A20 can suppress the movement of the first semiconductor element 11 due to the increased solder paste, which can cause misalignment.

[0062] In this embodiment, the case where the bonding layer 69 is solder has been described, but it is not limited to this. The bonding layer 69 may be a solidified metal paste such as silver paste, a sintered metal such as sintered silver, or an insulating bonding layer. In these cases as well, some components contained in the material of the bonding layer 69 may flow out during the reflow process to form the bonding layer 69. The groove 333 can prevent this fluid from flowing on the main surface 331 of the connecting portion 33.

[0063] <First variation> Figures 13 and 14 are diagrams illustrating a semiconductor device A21 according to a first modification of the second embodiment. Figure 13 is a cross-sectional view of the semiconductor device A21 and corresponds to Figure 11. Figure 14 is a partially enlarged view of Figure 13. The semiconductor device A21 of this modification differs from the semiconductor device A20 in that the connecting portion 33 has a metal layer instead of a groove portion 333.

[0064] In this modified example, the connecting portion 33 is provided with a metal layer 334 instead of a groove 333. The metal layer 334 is located near the center of the main surface 331 of the connecting portion 33 in the x-direction. The metal layer 334 protrudes from the main surface 331 of the connecting portion 33 and extends along the y-direction. In this embodiment, the metal layer 334 extends to both ends of the main surface 331 in the y-direction. As shown in Figure 14, the y-direction view shape of the metal layer 334 is substantially rectangular. However, the y-direction view shape of the metal layer 334 is not limited.

[0065] The metal layer 334 is, for example, a plated layer formed by a plating process. The metal layer 334 may also be formed by other methods. The material used for the metal layer 334 is one with worse solder wettability than the material of the connecting portion 33. Examples of materials for the metal layer 334 include Al (aluminum). For example, if the material of the first die pad 31 is Cu, the metal layer 334 may be a Cu alloy with worse solder wettability. Furthermore, the metal layer 334 is not limited to a single layer, but may be a laminate of multiple metal layers. Similar to the groove portion 333, the metal layer 334 is provided to inhibit the flow of molten solder paste during the reflow process in the manufacturing process. By forming the metal layer 334 with a material that has worse solder wettability than the material of the connecting portion 33, the flow of molten solder paste can be inhibited. Furthermore, the material of the metal layer 334 is not limited, as long as the height dimension of the metal layer 334 (the dimension in the direction perpendicular to the main surface 331) can be formed to be sufficiently high and that height can obstruct the flow.

[0066] The metal layer 334 only needs to be able to obstruct the flow of the molten solder paste. The metal layer 334 does not need to extend to both ends of the main surface 331 in the y-direction. The metal layer 334 may also be a dashed line-shaped plating layer in which multiple plating layers extending in the y-direction are arranged in the y-direction. Furthermore, the metal layer 334 does not have to extend in a straight line, but may be curved, for example. Also, the position of the metal layer 334 is not limited to the vicinity of the center in the x-direction of the main surface 331. In addition, multiple metal layers 334 may be arranged side by side in the x-direction.

[0067] The semiconductor device A21 can achieve the same effects as the semiconductor device A20.

[0068] <Second variation> Figures 15 and 16 are diagrams illustrating a semiconductor device A22 according to a second modification of the second embodiment. Figure 15 is a cross-sectional view of the semiconductor device A22 and corresponds to Figure 11. Figure 16 is a partially enlarged view of Figure 15. The semiconductor device A22 of this modification differs from the semiconductor device A20 in that the connecting portion 33 has a paste layer instead of a groove portion 333.

[0069] In this modified example, the connecting portion 33 is provided with a paste layer 335 instead of a groove 333. The paste layer 335 is located near the center of the main surface 331 of the connecting portion 33 in the x-direction. The paste layer 335 protrudes from the main surface 331 of the connecting portion 33 and extends along the y-direction. In this embodiment, the paste layer 335 extends to both ends of the main surface 331 in the y-direction. As shown in Figure 16, the y-direction view shape of the paste layer 335 is substantially rectangular. However, the y-direction view shape of the paste layer 335 is not limited. The height dimension T3 of the paste layer 335 (dimension in the direction perpendicular to the main surface 331) is preferably 20 μm or more. However, the dimension T3 is not limited.

[0070] The paste layer 335 is formed, for example, by applying an insulating paste to the main surface 331 of the connecting portion 33 and allowing it to solidify. Alternatively, the paste layer 335 may be formed by applying a conductive paste to the main surface 331 of the connecting portion 33 and allowing it to solidify. Furthermore, the paste layer 335 may be formed by other methods. For example, the paste layer 335 may be formed by attaching a die attach film to the main surface 331. The material of the paste layer 335 only needs to be able to withstand the heat of the reflow process. The paste layer 335, like the groove portion 333, is provided to obstruct the flow of molten solder paste during the reflow process in the manufacturing process.

[0071] The paste layer 335 only needs to be able to inhibit the flow of the molten solder paste. The paste layer 335 does not need to extend to both ends of the main surface 331 in the y-direction. The paste layer 335 may also be a dashed line in which multiple layers extending in the y-direction are arranged in the y-direction. Furthermore, the paste layer 335 does not have to extend in a straight line, but may be curved, for example. Also, the position of the paste layer 335 is not limited to the vicinity of the center in the x-direction of the main surface 331. In addition, multiple paste layers 335 may be arranged side by side in the x-direction.

[0072] The semiconductor device A22 can achieve the same effects as the semiconductor device A20.

[0073] <Third Embodiment> Figures 17 to 19 are diagrams illustrating a semiconductor device A30 according to the third embodiment of this disclosure. Figure 17 is a bottom view of the semiconductor device A30 and corresponds to Figure 4. Figure 18 is a cross-sectional view of the semiconductor device A30 and corresponds to Figure 8. Figure 19 is a cross-sectional view of the semiconductor device A30 and corresponds to Figure 9. The semiconductor device A30 of this embodiment differs from the first embodiment in that it further comprises a heat transfer member. The configuration and operation of other parts of this embodiment are the same as those of the first embodiment. The parts of the first and second embodiments described above may be combined in any way.

[0074] In this embodiment, the second semiconductor element 12 is a switching element, and the second semiconductor element 12 is a driving element that drives the second semiconductor element 12. Furthermore, the second semiconductor element 12 is one with a small thickness dimension (dimension in the z direction), and as shown in Figure 19, its thickness dimension is smaller than that of the first semiconductor element 11.

[0075] Furthermore, in this embodiment, the semiconductor device A30 further includes a heat transfer member 5. The heat transfer member 5 is a conductor, for example, made of Cu. The material of the heat transfer member 5 is not limited, and any material with high thermal conductivity is acceptable. The heat transfer member 5 is substantially rectangular in shape and is arranged on the back surface 322 of the second die pad 32. The heat transfer member 5 has a main surface 51 and a back surface 52. As shown in Figures 18 and 19, the main surface 51 and the back surface 52 are spaced apart in the z direction. The main surface 51 faces the z2 side, and the back surface 52 faces the z1 side. The main surface 51 and the back surface 52 are both substantially flat. The main surface 51 is in contact with the back surface 322 of the second die pad 32. A sheet with high thermal conductivity or the like may be placed between the main surface 51 of the heat transfer member 5 and the back surface 322 of the second die pad 32. As shown in Figure 17, the back surface 52 is exposed from the bottom surface 72 of the sealing resin 7 and serves as a back surface terminal, which is joined to the wiring board on which the semiconductor device A30 is mounted.

[0076] Furthermore, the heat transfer member 5 is equipped with two engaging portions 53. Each engaging portion 53 protrudes in the z2 direction from both ends in the y direction of the main surface 51 and engages with the second die pad 32. The heat transfer member 5 is attached to the second die pad 32 by a crimping process. Specifically, each engaging portion 53 of the heat transfer member 5 is engaged with both ends in the y direction of the second die pad 32 from the back surface 322 side of the second die pad 32. Then, heat is applied and the main surface 51 is pressed against the back surface 322 of the second die pad 32 to attach it. The arrangement position, shape, and number of engaging portions 53 are not limited. Also, the method of attaching the heat transfer member 5 is not limited. For example, the heat transfer member 5 may be attached to the second die pad 32 by providing a through hole in the second die pad 32, passing the engaging portion 53 through the through hole, and then crushing the tip. The heat transfer member 5 only needs to be attached in such a way that heat is properly transferred from the second die pad 32.

[0077] In this embodiment as well, since the second die pad 32 is positioned at a different location from the first die pad 31 in the z-direction, the first semiconductor element 11 and the second semiconductor element 12 are positioned at different locations in the z-direction. This prevents the semiconductor device A30 from being mounted with the first semiconductor element 11 and the second semiconductor element 12 in contact. Furthermore, the semiconductor device A30 also prevents the bonding layer 68 and the bonding layer 69 from coming into contact. In addition, in this embodiment as well, since the back surface 312 of the first die pad 31 is exposed from the bottom surface 72 of the sealing resin 7, the semiconductor device A30 can properly dissipate heat from the first semiconductor element 11. In addition, in this embodiment as well, a metal layer 66 is interposed between the main surface 321 of the second die pad 32 and the second semiconductor element 12. Therefore, the semiconductor device A30 can prevent the solder paste molten during manufacturing from flowing across the boundary between the metal layer 66 and the main surface 321 and onto the main surface 331 of the connecting portion 33.

[0078] Furthermore, according to this embodiment, the semiconductor device A30 is equipped with a heat transfer member 5. The heat transfer member 5 is made of a material with high thermal conductivity, its main surface 51 is in contact with the back surface 322 of the second die pad 32, and its back surface 52 is exposed from the sealing resin 7. The back surface 52 is joined to the wiring board when the semiconductor device A30 is mounted on the wiring board. Therefore, the heat generated by the second semiconductor element 12 is released to the wiring board from the back surface 52 of the heat transfer member 5 via the second die pad 32. As a result, the semiconductor device A30 can properly dissipate the heat from the second semiconductor element 12.

[0079] Furthermore, according to this embodiment, the second semiconductor element 12 has a smaller thickness than the first semiconductor element 11. Therefore, compared to the case where the thickness dimensions are the same, the position of the main surface 111 of the first semiconductor element 11 and the main surface 121 of the second semiconductor element 12 in the z-direction becomes closer when mounted on the first lead 3. This makes it easier to form the wire 61 and suppresses the occurrence of defects in the wire 61.

[0080] In this embodiment, the case in which the back surface 312 of the first die pad 31 is exposed from the bottom surface 72 of the sealing resin 7 has been described, but the embodiment is not limited to this. In this embodiment, since heat dissipation and conductivity are possible via the heat transfer member 5, the back surface 312 of the first die pad 31 does not need to be exposed from the sealing resin 7.

[0081] <First variation> Figure 20 is a diagram illustrating a semiconductor device A31 according to the first modified example of the third embodiment. Figure 20 is a cross-sectional view of the semiconductor device A31 and corresponds to Figure 18. The semiconductor device A31 of this modified example differs from the semiconductor device A30 in the method of attaching the heat transfer member 5.

[0082] In this modified example, the heat transfer member 5 does not have an engaging portion 53, and its main surface 51 is joined to the back surface 322 of the second die pad 32 via a conductive bonding material (not shown). The bonding material that joins the heat transfer member 5 and the second die pad 32 may be an insulating bonding material. The bonding material should have high thermal conductivity. The method of joining the heat transfer member 5 to the back surface 322 of the second die pad 32 may be ultrasonic bonding or spot welding, etc. The semiconductor device A31 can also achieve the same effects as the semiconductor device A30.

[0083] In the third embodiment, the case in which the heat transfer member 5 is a conductor was described, but it is not limited to this. The heat transfer member 5 may be an insulator such as aluminum oxide (alumina). Alternatively, the heat transfer member 5 may be formed from a resin material with high thermal conductivity. The material of the heat transfer member 5 is not limited and any material with high thermal conductivity is acceptable. Furthermore, the heat transfer member 5 may be mounted using conventionally known techniques so as to properly transfer heat from the second die pad 32.

[0084] <Fourth Embodiment> Figure 21 is a diagram illustrating a semiconductor device A40 according to the fourth embodiment of this disclosure. Figure 21 is a plan view of the semiconductor device A40 and corresponds to Figure 3. In Figure 21, for ease of understanding, the outline of the sealing resin 7 is shown by dashed lines (double-dotted lines) through the sealing resin 7. The semiconductor device A40 of this embodiment differs from the first embodiment in that it does not include a second semiconductor element 12. The configuration and operation of other parts of this embodiment are the same as in the first embodiment. Note that the parts of the first to third embodiments described above may be combined in any way.

[0085] In this embodiment, semiconductor device A40 does not have a second semiconductor element 12, and only the first semiconductor element 11 is mounted. The first semiconductor element 11 is a HEMT. Also, the size of the second die pad 32 in the z direction is smaller than that of the second die pad 32 of semiconductor device A10. The area of ​​the main surface 321 of the second die pad 32 is less than half the area of ​​the main surface 311 of the first die pad 31. In addition, the number of second leads 4 is fewer than that of semiconductor device A10, at 6.

[0086] In this embodiment, the first semiconductor element 11 has a source electrode, a drain electrode, and a gate electrode (not shown) on its main surface 111, and no electrodes on its back surface 112. The first semiconductor element 11 is mounted on the main surface 311 of the first die pad 31 via a junction layer 68, which is an insulating junction layer. The source electrode and gate electrode of the first semiconductor element 11 are electrically connected to the second lead 4 via wires 62. The drain electrode of the first semiconductor element 11 is electrically connected to the second die pad 32 via a plurality of wires 64. Each wire 64 is bonded to the drain electrode of the first semiconductor element 11 and to a metal layer 66 located on the main surface 321 of the second die pad 32. As a result, the second die pad 32 (first lead 3) is electrically connected to the drain electrode of the first semiconductor element 11 and functions as a drain terminal. The number of wires 64 is not limited.

[0087] In this embodiment as well, the second die pad 32 is positioned differently from the first die pad 31 in the z-direction. Therefore, even when an electronic component is mounted on the second die pad 32, the semiconductor device A40 can prevent the electronic component from being mounted in contact with the first semiconductor element 11. Furthermore, the semiconductor device A40 can also prevent contact between the bonding layer 68 that joins the electronic component. In addition, since the metal layer 66 is arranged on the main surface 321 of the second die pad 32, the semiconductor device A40 can prevent the solder paste used to join the electronic component to the metal layer 66 from flowing over the boundary between the metal layer 66 and the main surface 321 and onto the main surface 331 of the connecting portion 33, even if the solder paste melts during manufacturing. Furthermore, in this embodiment as well, since the back surface 312 of the first die pad 31 is exposed from the bottom surface 72 of the sealing resin 7, the semiconductor device A40 can properly dissipate heat from the first semiconductor element 11.

[0088] Furthermore, according to this embodiment, each wire 64 is joined to the main surface 321 of the second die pad 32 via a metal layer 66. The main surface 321 of the second die pad 32 is located z2 in the z direction compared to the main surface 311 of the first die pad 31. Also, since the first semiconductor element 11 is mounted on the main surface 311, the area for joining the wires 64 is narrow. Therefore, compared to the case where the wires 64 are joined to the main surface 311, the semiconductor device A40 is easier to form the wires 64 and the occurrence of wire defects is suppressed.

[0089] In this embodiment, the case in which the area of ​​the main surface 321 of the second die pad 32 is less than or equal to half the area of ​​the main surface 311 of the first die pad 31 has been described, but the embodiment is not limited to this. If the area of ​​the main surface 321 of the second die pad 32 is made to be approximately the same as the area of ​​the main surface 311 of the first die pad 31, the semiconductor device A40 and the semiconductor device A10 can share the first lead 3.

[0090] <Fifth Embodiment> Figure 22 is a diagram illustrating a semiconductor device A50 according to the fifth embodiment of this disclosure. Figure 22 is a cross-sectional view of the semiconductor device A50 and corresponds to Figure 9. The semiconductor device A50 of this embodiment differs from the first embodiment in that it combines the features of the second and third embodiments. The configuration and operation of other parts of this embodiment are the same as those of the first embodiment.

[0091] In this embodiment, the connecting portion 33 is provided with a groove 333, similar to the second embodiment. The configuration of the groove 333 is the same as in the second embodiment. Note that various variations of the groove 333 described in the second embodiment can be used. In addition, the connecting portion 33 may be provided with a metal layer 334 instead of the groove 333, as described in the first modified example, or with a paste layer 335, as described in the second modified example.

[0092] Furthermore, in this embodiment, the semiconductor device A50 is equipped with a heat transfer member 5, similar to the third embodiment. The configuration of the heat transfer member 5 is the same as in the third embodiment. Various variations of the heat transfer member 5 described in the third embodiment can be used. The heat transfer member 5 may also be mounted as described in the first modified example. In addition, as in the first embodiment, the first semiconductor element 11 may be a switching element and the second semiconductor element 12 may be a driving element, or as in the third embodiment, the second semiconductor element 12 may be a switching element and the first semiconductor element 11 may be a driving element.

[0093] According to this embodiment, the effects described in the first to third embodiments can be achieved.

[0094] In the first to fifth embodiments, the cases in which the first semiconductor element 11 or the second semiconductor element 12 is mounted on the first die pad 31 and the second die pad 32 have been described, but the embodiments are not limited to this. Other electronic components (including semiconductor elements) may be further mounted on the first die pad 31 or the second die pad 32, or the first semiconductor element 11 or the second semiconductor element 12 may not be mounted at all.

[0095] The semiconductor device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways.

[0096] [Note 1] First lead (3), The first semiconductor element (11) mounted on the first lead (3), A sealing resin (7) covering the first semiconductor element (11), Equipped with, The aforementioned first lead (3) is, A first die pad (31) having a first main surface (311) and a first back surface (312) facing opposite directions in the thickness direction, A second die pad (32) is positioned alongside the first die pad (31) in a first direction perpendicular to the thickness direction, and is located on the first main surface (311) side relative to the first die pad (31) in the thickness direction, A connecting portion (33) that connects the first die pad (31) and the second die pad (32), Equipped with, The first back surface (312) is exposed from the sealing resin (7). Semiconductor equipment. [Note 2] The first semiconductor element (11) is mounted on the first main surface (311), The semiconductor device described in Appendix 1. [Note 3] The second die pad (32) includes a second main surface (321) facing the same side as the first main surface (311) in the thickness direction, and a second back surface (322) facing the same side as the first back surface (312). Semiconductor device as described in Appendix 2. [Appendix 4, Fourth Embodiment, Figure 21] The device further comprises a first connecting member (64) connected to the first semiconductor element (11) and the second main surface (321). Semiconductor device as described in Appendix 3. [Note 5] The device further comprises a second semiconductor element (12) mounted on the second main surface (321). Semiconductor device as described in Appendix 3 or 4. [Note 6] The device further comprises a second connecting member (61) connected to the first semiconductor element (11) and the second semiconductor element (12). Semiconductor device as described in Appendix 5. [Note 7] The device further comprises a junction layer (69) interposed between the second main surface (321) and the second semiconductor element (12). Semiconductor device as described in Appendix 5 or 6. [Note 8] The bonding layer (69) is solder. Semiconductor device as described in Appendix 7. [Note 9] The first semiconductor element (11) is a switching element, The second semiconductor element (12) is a driving element that drives the first semiconductor element (11). A semiconductor device as described in any of appendices 5 to 8. [Note 10] The second main surface (321) further comprises a metal layer (66) disposed therein. A semiconductor device as described in any of appendices 3 to 9. [Note 11] The aforementioned metal layer (66) contains Ag. Semiconductor device as described in Appendix 10. [Note 12] The metal layer (66) is embedded in the second main surface (321) in the thickness direction view, The semiconductor device described in Appendix 10 or 11. [Note 13] The area of ​​the first main surface (311) and the area of ​​the second main surface (321) are approximately the same. A semiconductor device as described in any of appendices 3 to 12. [Appendix 14, Fourth Embodiment, Figure 21] The area of ​​the second main surface (321) is less than or equal to half the area of ​​the first main surface (311). A semiconductor device as described in any of appendices 3 to 12. [Note 15] The sealing resin (7) further comprises a plurality of second leads (4) each having a terminal portion (42) protruding from the sealing resin (7), Each of the terminal portions (42) is arranged along the first direction. A semiconductor device as described in any of Appendix 1 to 14. [Explanation of symbols]

[0097] A10, A20, A21, A22, A30, A31, A40, A50: Semiconductor equipment 11: First semiconductor element 111: Main surface of the element 112: element reverse side 12: Second semiconductor element 121: Main surface of the element 122: related reverse side 2: Conductive support member 3: First lead 31: First die pad 311: Main surface 312: Back side 32: Second die pad 321: Main surface 322: Back side 33:Connection part 331: Main surface 332: Back side 333: Groove 334: Metal layer 335: Paste layer 34:Fixed part 341: End face 342: Parallel section 343: Inclined part 35:Fixed part 351: End face 352: Parallel section 353: Inclined part 4: Second lead 41: Pad section 42:Terminal section 5: Heat transfer components 51: Main surface 52: Back side 53: Engaging part 61, 62, 63, 64: Wire 65,66: Metal layer 68,69: Bonding layer 7: Sealing resin 71:Top surface 72: Bottom 73, 74, 75, 76: Side view

Claims

1. First lead, The first semiconductor element mounted on the first lead, A sealing resin covering the first semiconductor element, Equipped with, The first lead is, A first die pad having a first main surface and a first back surface facing opposite directions in the thickness direction, A second die pad is positioned alongside the first die pad in a first direction perpendicular to the thickness direction, and is located on the first main surface side relative to the first die pad in the thickness direction, A connecting portion that connects the first die pad and the second die pad, Equipped with, The first back surface is directly exposed from the sealing resin, The second die pad has a second main surface that faces the same side as the first main surface in the thickness direction, The connecting portion comprises a connecting portion main surface connected to the first main surface and the second main surface, and an obstructing portion disposed on the connecting portion main surface and obstructing the flow of fluids. Semiconductor equipment.

2. The sealing resin has a resin bottom surface that faces the same side as the first back surface in the thickness direction, The first back surface and the resin bottom surface are flush. The semiconductor device according to claim 1.

3. The first semiconductor element is mounted on the first main surface, The semiconductor device according to claim 1 or 2.

4. The second die pad has a second back surface that faces the same side as the first back surface in the thickness direction. The semiconductor device according to claim 3.

5. The semiconductor device according to claim 4, further comprising a first connecting member connected to the first semiconductor element and the second main surface.

6. The device further comprises a second semiconductor element mounted on the second main surface. The semiconductor device according to claim 4 or 5.

7. The system further includes a second connecting member connected to the first semiconductor element and the second semiconductor element. The semiconductor device according to claim 6.

8. The device further comprises a junction layer interposed between the second main surface and the second semiconductor element. The semiconductor device according to claim 6 or 7.

9. The aforementioned bonding layer is solder. The semiconductor device according to claim 8.

10. The first semiconductor element is a switching element, The second semiconductor element is a driving element that drives the first semiconductor element. The semiconductor device according to any one of claims 6 to 9.

11. The second main surface further comprises a metal layer, A semiconductor device according to any one of claims 4 to 10.

12. The aforementioned metal layer contains Ag. The semiconductor device according to claim 11.

13. The metal layer is embedded in the second main surface in the thickness direction view, The semiconductor device according to claim 11 or 12.

14. The area of ​​the first main surface and the area of ​​the second main surface are approximately the same. The semiconductor device according to any one of claims 4 to 13.

15. The area of ​​the second main surface is less than or equal to half the area of ​​the first main surface. The semiconductor device according to any one of claims 4 to 13.

16. The system further comprises a plurality of second leads having terminal portions protruding from the sealing resin, Each of the aforementioned terminal portions is arranged along the first direction. A semiconductor device according to any one of claims 1 to 15.

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