Chip manufacturing method

Abstract

To provide a manufacturing method of a chip, capable of improving a transverse intensity as well as preventing a film peeling.SOLUTION: A manufacturing method of a chip, includes: a function layer parting step 1 of irradiating a laser beam along a division schedule line, forming two laser processing grooves that are arranged to a width direction of the division schedule line to a substrate, and parting a function layer; an auxiliary groove formation step 2 of radiating the laser beam along the division schedule line on an outside of a width direction of the division schedule line by the two laser processing grooves to form a plurality of auxiliary grooves that do not reach to the substrate; and a division groove formation step 3 of forming each division groove between the two laser processing grooves. In the auxiliary groove formation step 2, the plurality of auxiliary grooves are formed in sequence to the outside of the width direction of the division schedule line from a position where one part is overlapped with the laser processing groove up to a position where it is not overlapped with the laser processing groove.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a chip.

Background Art

[0002] In recent years, in order to improve the processing capabilities of semiconductor chips such as ICs (Integrated Circuits) and LSIs (Large Scale Integrations), semiconductor wafers in a form in which semiconductor chips are formed by a laminate in which a low dielectric constant insulator film (Low-k film) and a functional layer are laminated on the surface of a semiconductor substrate such as silicon have been put into practical use. Further, a semiconductor wafer in which a metal pattern called a TEG (Test Element Group) is partially disposed on a street of the semiconductor wafer and the function of the circuit is tested through the metal pattern before dividing the semiconductor wafer has also been put into practical use.

[0003] As a method for processing the above wafers, a technique is disclosed in which after forming two laser processing grooves at both ends in the width direction of the street by laser processing, a dividing groove is formed at the center in the width direction of the street, that is, between the two laser processing grooves (see Patent Document 1). However, when forming the dividing groove, since it is necessary to perform laser processing with a strong output in order to prevent peeling of the Low-k film, there has been a problem that the flexural strength of the device chip is lowered. Therefore, a method has been devised in which by forming an auxiliary groove at a position away from the edge of the laser processing groove, the thermal stress generated at the edge of the laser processing groove is cut off, and the flexural strength of the device chip is improved (see Patent Document 2).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

[0005] However, in order to minimize thermal stress caused by the auxiliary grooves, it was necessary to process with low power, which presented a different problem: discoloration and delamination (peeling of the film) could occur.

[0006] This invention has been made in view of the above problems, and its purpose is to provide a method for manufacturing chips that can prevent film peeling and improve flexural strength. [Means for solving the problem]

[0007] To solve the above-mentioned problems and achieve the objective, the present invention provides a chip manufacturing method, which involves manufacturing a chip by dividing a wafer on which a functional layer is laminated on the surface of a substrate and a plurality of devices are formed along a plurality of division lines that demarcate the devices, the method comprising: a functional layer division step of irradiating a laser beam along the division lines to form two laser-processed grooves that reach the substrate and are aligned in the width direction of the division lines, thereby dividing the functional layer; an auxiliary groove formation step of irradiating a laser beam along the division lines outside the width direction of the division lines from the two laser-processed grooves after the functional layer division step to form a plurality of auxiliary grooves that do not reach the substrate; and a division groove formation step of forming a division groove between the two laser-processed grooves after the auxiliary groove formation step, wherein in the auxiliary groove formation step, a plurality of auxiliary grooves are formed sequentially outward in the width direction of the division lines from a position where they partially overlap with the laser-processed grooves formed in the functional layer division step to a position where they do not overlap with the laser-processed grooves.

[0008] Furthermore, in the chip manufacturing method of the present invention, in the division groove formation step, a division groove may be formed by irradiating a laser beam along the division line between the two laser-processed grooves formed along the division line. [Effects of the Invention]

[0009] This invention can prevent film peeling and improve flexural strength. [Brief explanation of the drawing]

[0010] [Figure 1] Figure 1 is a perspective view showing an example of a wafer to be processed by the chip manufacturing method according to the embodiment. [Figure 2] Figure 2 is a cross-sectional view of the wafer shown in Figure 1. [Figure 3] Figure 3 is a flowchart showing the flow of the chip manufacturing method according to the embodiment. [Figure 4] Figure 4 is a perspective view showing one state of the functional layer division step shown in Figure 3. [Figure 5] Figure 5 is a side view showing one state of the functional layer division step shown in Figure 3, with a partial cross-section. [Figure 6] Figure 6 is a plan view showing an enlarged portion of the wafer in one of the states following Figure 5. [Figure 7] Figure 7 is a side view showing a partial cross-section of one state after Figure 6. [Figure 8] Figure 8 is a partially enlarged cross-sectional view showing a section perpendicular to the wafer processing feed direction after the functional layer division step shown in Figure 3. [Figure 9] Figure 9 is a plan view showing an enlarged portion of the wafer in one state of the auxiliary groove formation step shown in Figure 3. [Figure 10] Figure 10 is a schematic plan view showing the irradiation position of the laser beam in Figure 9. [Figure 11] Figure 11 is a partially enlarged cross-sectional view showing a section perpendicular to the wafer processing feed direction after the auxiliary groove formation step shown in Figure 3. [Figure 12] Figure 12 is a plan view showing an enlarged portion of the wafer in one state of the groove formation step shown in Figure 3. [Figure 13]FIG. 13 is a cross-sectional view showing a partial enlargement of a cross-section perpendicular to the processing feed direction of the wafer after the split groove forming step shown in FIG. 3.

BEST MODE FOR CARRYING OUT THE INVENTION

[0011] A mode (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the content described in the following embodiments. Further, the constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. Also, various omissions, substitutions, or changes in the configuration can be made without departing from the gist of the present invention.

[0012] 〔Embodiment〕 A method for manufacturing the chip 17 according to an embodiment of the present invention will be described based on the drawings. FIG. 1 is a perspective view showing an example of a wafer 10 to be processed in the manufacturing method of the chip 17 according to the embodiment. FIG. 2 is a cross-sectional view of the wafer 10 shown in FIG. 1. The wafer 10 shown in FIGS. 1 and 2 is a disk-shaped semiconductor device wafer, an optical device wafer, etc. having a substrate 11 made of silicon (Si), sapphire (Al2O3), gallium arsenide (GaAs), silicon carbide (SiC), or lithium tantalate (LiTaO3), etc.

[0013] The wafer 10 has a plurality of division planned lines 13 set in a grid pattern on the surface 12 of the substrate 11, and a plurality of devices 14 formed in regions partitioned by the division planned lines 13. The device 14 is, for example, an integrated circuit such as an IC or LSI, or an image sensor such as a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor). The back surface 15 of the wafer 10 is the surface located on the side opposite to the surface 12 where the device 14 is formed.

[0014] Further, on the surface 12 of the substrate 11 of the wafer 10, a functional layer 16 is laminated. The functional layer 16 is composed of a Low-k film made of an inorganic film such as SiOF or BSG (SiOB) or an organic film such as a polymer film of polyimide or parylene, and a conductor film made of a conductive metal laminated thereon. The Low-k film is laminated with the conductor film to form the device 14. The conductor film constitutes the circuit of the device 14. For this reason, the device 14 is composed of the Low-k films laminated on each other and the conductor films laminated between the Low-k films. In the embodiment, the thickness of the wafer 10 is 30 μm, the thickness of the substrate 11 is 10 μm, and the thickness of the Low-k film of the functional layer 16 is 20 μm.

[0015] The wafer 10 is conveyed and processed while being supported by, for example, an annular frame 30 and a tape 31. The frame 30 is an annular plate member formed of metal or resin and having an opening larger than the outer diameter of the wafer 10. The tape 31 is a sheet-like shape having an outer diameter larger than the opening of the frame 30, and is adhered to the back side of the frame 30 so as to cover the opening of the frame 30.

[0016] The tape 31 may include, for example, a base material layer made of a synthetic resin and an adhesive layer made of a synthetic resin laminated on the base material layer and having adhesiveness, or may be composed of a resin having thermoplasticity without an adhesive layer. The wafer 10 is positioned at a predetermined position of the opening of the frame 30 and adhered to the tape 31 on the back surface 15 side, thereby being fixed to the frame 30 and the tape 31.

[0017] The wafer 10 is divided into individual devices 14 along a plurality of dividing lines 13 to be manufactured into chips 17. In the embodiment, the chip 17 is square, but may be rectangular. Further, in the embodiment, the wafer 10 is disc-shaped, but in the present invention, it does not have to be disc-shaped.

[0018] Figure 3 is a flowchart showing the flow of a method for manufacturing a chip 17 according to an embodiment. The method for manufacturing a chip 17 is a method for manufacturing a plurality of chips 17 from a wafer 10 to be processed. As shown in Figure 3, the method for manufacturing a chip 17 includes a functional layer division step 1, an auxiliary groove formation step 2, and a divided groove formation step 3.

[0019] (Functional layer division step 1) Figure 4 is a perspective view showing one state of functional layer separation step 1 shown in Figure 3. Figure 5 is a side view showing a partial cross-section of one state of functional layer separation step 1 shown in Figure 3. Figure 6 is a plan view showing an enlarged portion of the wafer 10 in a state following Figure 5. Figure 7 is a side view showing a partial cross-section of one state following Figure 6. Figure 8 is a partially enlarged cross-sectional view showing a section perpendicular to the processing feed direction of the wafer 10 after functional layer separation step 1 shown in Figure 3.

[0020] Functional layer division step 1 is a step in which a laser beam 40 is irradiated along the division line 13 to form two laser-processed grooves 20 that reach the substrate 11 and are aligned in the width direction of the division line 13, thereby dividing the functional layer 16. As shown in Figure 4, functional layer division step 1 in this embodiment is carried out by ablation processing using a laser processing apparatus 45.

[0021] The laser processing apparatus 45 comprises a chuck table 46, a laser beam irradiation unit 47, an imaging unit 48, and a moving unit (not shown) that moves the chuck table 46 and the laser beam irradiation unit 47 relative to each other. In this embodiment, the processing feed direction of the laser processing apparatus 45 is the X-axis direction, which is one direction in the horizontal plane. The indexing feed direction of the laser processing apparatus 45 is the Y-axis direction, which is perpendicular to the X-axis direction in the horizontal plane. The focusing point position adjustment direction of the light condenser of the laser beam irradiation unit 47 is the Z-axis direction, which is perpendicular to both the X-axis and Y-axis directions.

[0022] In functional layer separation step 1, the back surface 15 of the wafer 10 is first held on the holding surface (upper surface) of the chuck table 46 via the tape 31. The holding surface of the chuck table 46 is a disc shape formed from, for example, porous ceramic, and is a plane parallel to the horizontal direction. The holding surface is connected to a vacuum suction source via, for example, a vacuum suction path. The chuck table 46 holds the wafer 10 placed on the holding surface by suction. The laser processing apparatus 45 may include, for example, a plurality of clamping members arranged around the chuck table 46, and the frame 30 supporting the wafer 10 may be clamped by the clamping members.

[0023] In functional layer division step 1, the chuck table 46 is then moved to the processing position by a moving unit. Next, the wafer 10 is imaged by the imaging unit 48 to detect the division line 13. Once the division line 13 is detected, an alignment is performed by a moving unit (not shown) to align the division line 13 with the irradiation part of the laser beam irradiation unit 47.

[0024] In functional layer division step 1, the focal point 41 of the laser beam 40 is then positioned near the functional layer 16 on the surface 12 of the wafer 10, as shown in Figure 5. In this state, the laser beam 40 is irradiated from the surface 12 side of the wafer 10, and the focal point 41 is moved relative to the processing feed direction along the division line 13. When the laser beam 40 is irradiated onto the wafer 10, etc., it raises the temperature of the material at the irradiated area, ionizes electrons and other particles from the atoms of molecules in the material surrounding the irradiated area, and generates a gas containing charged particles produced by ionization, i.e., plasma (equivalent to light).

[0025] Here, the laser beam 40 irradiated toward the wafer 10 is a laser beam with a wavelength that is absorbed by the functional layer 16. The specific processing conditions of the embodiment are that the frequency of the laser beam 40 is 600 kHz, the output is 3.3 W, the feed rate is 200 mm / s, and the number of passes is 1 pass. The laser beam 40 also branches in the indexing feed direction (Y-axis direction), forming two focal points 41. The branching distance in the Y-axis direction is 23 μm under the processing conditions of the embodiment.

[0026] As a result, as shown in Figures 6 and 8, two laser-cut grooves 20 are formed along the division line 13, aligned in the width direction of the division line 13. Under the processing conditions of this embodiment, the processing width of the two laser-cut grooves 20 is approximately 28 μm. Here, the processing width refers to the sum of the width of each laser-cut groove 20 and the width of the portion between the two laser-cut grooves 20. As shown in Figures 7 and 8, the bottom surfaces of the two laser-cut grooves 20 reach the substrate 11, and the functional layer 16 is removed along the division line 13, exposing the substrate 11.

[0027] After forming two laser-cut grooves 20 on one planned division line 13, the focusing point 41 is moved relative to the indexing feed direction (Y-axis direction) to similarly form two laser-cut grooves 20 on the adjacent planned division line 13. Furthermore, once two laser-cut grooves 20 have been formed on all planned division lines 13 extending in one direction, the chuck table 46 is rotated 90° to similarly form two laser-cut grooves 20 on the planned division lines 13 extending in directions intersecting the one direction. Once two laser-cut grooves 20 have been formed on all planned division lines 13, the functional layer division step 1 is completed and the process moves to the auxiliary groove formation step 2.

[0028] (Auxiliary groove formation step 2) Figure 9 is a plan view showing an enlarged portion of the wafer 10 in one state of the auxiliary groove formation step 2 shown in Figure 3. Figure 10 is a plan view schematically showing the irradiation position of the laser beam 40 in Figure 9. Figure 11 is a cross-sectional view showing an enlarged portion of the wafer 10 perpendicular to the processing feed direction after the auxiliary groove formation step 2 shown in Figure 3.

[0029] The auxiliary groove formation step 2 is performed after the functional layer division step 1 is carried out. The auxiliary groove formation step 2 is a step in which a laser beam 40 is irradiated along the division line 13 on the widthwise side of the division line 13 from the two laser-processed grooves 20 to form a plurality of auxiliary grooves 21 that do not reach the substrate 11. In this embodiment, the auxiliary groove formation step 2 is carried out by ablation processing using the laser processing apparatus 45 shown in Figure 4, similar to the functional layer division step 1.

[0030] In the auxiliary groove formation step 2, similar to the functional layer division step 1, an alignment is performed using a moving unit (not shown) to align the planned division line 13 with the irradiation part of the laser beam irradiation unit 47. Next, the focal point 41 of the laser beam 40 is positioned near the functional layer 16 on the surface 12 of the wafer 10. In this state, while irradiating the wafer 10 surface 12 side with the laser beam 40, the focal point 41 is moved relative to the planned division line 13 in the processing feed direction.

[0031] Here, the laser beam 40 irradiated toward the wafer 10 is a laser beam with a wavelength that is absorbed by the functional layer 16. The specific processing conditions of the embodiment are that the laser beam 40 has a frequency of 600 kHz, an output of 4.5 W, a feed rate of 800 mm / s, and 3 passes. The laser beam 40 also branches in the processing feed direction (X-axis direction) to form eight focal points 41, and branches in the indexing feed direction (Y-axis direction) to form two focal points 41, for a total of sixteen focal points 41. The branching intervals in the Y-axis direction are 29 μm for the first pass, 33 μm for the second pass, and 37 μm for the third pass under the processing conditions of the embodiment.

[0032] In this case, the irradiation area of ​​the laser beam 40 partially overlaps with the laser processing groove 20 and is located outside the width direction of the division line 13 from the laser processing groove 20. As a result, as shown in Figures 9 and 11, in the first pass of laser irradiation, two auxiliary grooves 21-1 are formed along the division line 13, partially overlapping with the two laser processing grooves 20 and offset outward in the width direction of each laser processing groove 20 from the division line 13. The plasma generated when laser processing the auxiliary grooves 21-1 can escape from the laser processing groove 20, so it is possible to suppress discoloration and delamination compared to when there is no escape route for the plasma.

[0033] In the second pass of laser irradiation, two auxiliary grooves 21-2 are formed along the division line 13 at a position further offset to the outside in the width direction of the division line 13, and in the third pass of laser irradiation, two auxiliary grooves 21-3 are formed along the division line 13 at a position further offset to the outside in the width direction of the division line 13. The plasma generated when laser processing the auxiliary grooves 21-2 and 21-3 can escape from the laser-processed groove 20 and the previously formed auxiliary grooves 21-1 and 21-2, so it is possible to suppress discoloration and delamination compared to when there is no escape route for the plasma. In this way, auxiliary grooves 21-1, 21-2, and 21-3 are formed sequentially toward the outside in the width direction of the division line 13.

[0034] In auxiliary groove formation step 2, two auxiliary grooves 21, consisting of multiple auxiliary grooves 21-1, 21-2, 21-3, and 21-4, are formed until two auxiliary grooves 21-4 are formed in positions that do not overlap with the laser-processed groove 20. That is, as shown in Figure 10, the last auxiliary groove 21-4 is not formed in the area on the laser-processed groove 20 side of the outer edge of the laser-processed groove 20 (the dashed line shown in Figure 10). As shown in Figure 11, the two auxiliary grooves 21 do not reach the substrate 11 and do not completely remove the functional layer 16.

[0035] After forming two auxiliary grooves 21 on one planned division line 13, the focusing point 41 is moved relative to the indexing feed direction (Y-axis direction) to similarly form two auxiliary grooves 21 on the adjacent planned division line 13. Furthermore, once two auxiliary grooves 21 have been formed on all planned division lines 13 extending in one direction, the chuck table 46 is rotated 90° to similarly form two auxiliary grooves 21 on each of the planned division lines 13 extending in directions intersecting the one direction. Once two auxiliary grooves 21 have been formed on all planned division lines 13, the auxiliary groove formation step 2 is completed and the process moves to the division groove formation step 3.

[0036] (Step 3: Forming the divided grooves) Figure 12 is a plan view showing an enlarged portion of the wafer 10 in one state of the divided groove formation step 3 shown in Figure 3. Figure 13 is a cross-sectional view showing an enlarged portion of the wafer 10 perpendicular to the processing feed direction after the divided groove formation step 3 shown in Figure 3.

[0037] The division groove formation step 3 is performed after the auxiliary groove formation step 2 is carried out. In the division groove formation step 3, a division groove 22 is formed between the two laser-processed grooves 20. In the division groove formation step 3 of this embodiment, the division groove 22 is formed by irradiating the laser beam 40 along the division line 13 between the two laser-processed grooves 20. The division groove formation step 3 of this embodiment is carried out by ablation processing using the laser processing apparatus 45 shown in Figure 4, similar to the functional layer division step 1 and the auxiliary groove formation step 2.

[0038] In the division groove formation step 3, similar to the functional layer division step 1 and the auxiliary groove formation step 2, an alignment is performed by a moving unit (not shown) to align the planned division line 13 with the irradiation part of the laser beam irradiation unit 47. Next, the focal point 41 of the laser beam 40 is positioned near the functional layer 16 on the surface 12 of the wafer 10. In this state, while irradiating the wafer 10 from the surface 12 side with the laser beam 40, the focal point 41 is moved relative to the planned division line 13 in the processing feed direction.

[0039] Here, the laser beam 40 irradiated toward the wafer 10 is a laser beam with a wavelength that is absorbed by the functional layer 16 and the substrate 11. The specific processing conditions of the embodiment are that the frequency of the laser beam 40 is 100 kHz, the output is 9.7 W, the feed rate is 800 mm / s, and the kerf width is 23 μm. The kerf width is, that is, the branching interval in the Y-axis direction when forming the laser-processed groove 20 in the functional layer division step 1, and is the distance between the two laser-processed grooves 20.

[0040] As a result, as shown in Figures 12 and 13, a dividing groove 22 is formed between the two laser-processed grooves 20 along the planned dividing line 13. The dividing groove 22 has its bottom surface reaching the back surface 15 of the substrate 11, dividing the wafer 10.

[0041] After forming a division groove 22 on one division line 13, the focusing point 41 is moved relative to the division feed direction (Y-axis direction) to similarly form a division groove 22 on the adjacent division line 13. Furthermore, once division grooves 22 have been formed on all division lines 13 extending in one direction, the chuck table 46 is rotated 90° to similarly form division grooves 22 on division lines 13 extending in directions intersecting the division line. Once division grooves 22 have been formed on all division lines 13, the division groove formation step 3 is completed. After the division groove formation step 3 is completed and the wafer 10 has been divided into chips 17, for example, in a pickup process, the chips 17 are picked up from the tape 31 using a well-known picker.

[0042] As described above, in the manufacturing method of the chip 17 of the embodiment, two laser-cut grooves 20 are formed at positions offset from the center in the width direction of the division line 13, respectively. Then, an auxiliary groove 21-1 is formed overlapping the laser-cut grooves 20 and on the outside in the width direction of the division line 13. Then, auxiliary grooves 21-2, 21-3, and 21-4 are gradually extended outward in the width direction of the division line 13. After forming multiple auxiliary grooves 21-1, 21-2, 21-3, and 21-4 to a position that does not overlap the laser-cut grooves 20, a division groove 22 is formed in the center in the width direction of the division line 13 between the two laser-cut grooves 20.

[0043] The auxiliary groove 21 is formed in a position that overlaps with the laser processing groove 20, thereby providing an escape route for the plasma generated near the focusing point 41 during processing, on the side of the laser processing groove 20. Compared to the case where there is no escape route for the plasma, as described in Patent Document 2, discoloration and delamination can be suppressed. Furthermore, since the auxiliary groove 21 is formed by reducing the output of the laser beam 40 from the position where it partially overlaps with the laser processing groove 20 to the position where it no longer overlaps with the laser processing groove 20, the thermal stress generated when forming the laser processing groove 20 can be interrupted by the auxiliary groove 21, thereby improving the flexural strength of the device chip.

[0044] It should be noted that the present invention is not limited to the embodiments described above. That is, it can be implemented with various modifications without departing from the core principles of the present invention.

[0045] For example, in this embodiment, two laser-processed grooves 20 are formed simultaneously on a single division line 13 by branching the laser beam 40 in the indexing feed direction. However, in this invention, the laser-processed grooves 20 may be formed one by one. Similarly, auxiliary grooves 21-1, 21-2, 21-3, and 21-4 may also be formed one by one.

[0046] Furthermore, step 3, which involves forming a segmented groove, is not limited to laser processing and may also be performed by cutting with a blade.

[0047] Furthermore, in this embodiment, the auxiliary groove formation step 2 is performed after the functional layer division step 1 is completed for all wafer 10 division lines 13, and the division groove formation step 3 is performed after the auxiliary groove formation step 2 is completed for all wafer 10 division lines 13. However, the present invention is not limited to this. For example, the functional layer division step 1, the auxiliary groove formation step 2, and the division groove formation step 3 may be performed consecutively for one division line 13, and the functional layer division step 1, the auxiliary groove formation step 2, and the division groove formation step 3 may be repeated for the number of division lines 13. Alternatively, for example, the functional layer division step 1, the auxiliary groove formation step 2, and the division groove formation step 3 may be performed sequentially for all division lines 13 extending in one direction, and then the functional layer division step 1, the auxiliary groove formation step 2, and the division groove formation step 3 may be performed sequentially for all division lines 13 extending in a direction intersecting one direction. [Explanation of symbols]

[0048] 10 wafers 11 circuit boards 12 Surface 13 planned division lines 14 devices 15 Back side 16 Functional Layers 17 chips 20 laser-cut grooves 21, 21-1, 21-2, 21-3, 21-4 Auxiliary groove 22 Dividing groove 40 laser beams

Claims

1. A method for manufacturing chips, comprising dividing a wafer on which a functional layer is laminated on the surface of a substrate to form multiple devices along multiple division lines that demarcate the devices, A functional layer division step involves irradiating a laser beam along the planned division line to form two laser-processed grooves on the substrate that are aligned in the width direction of the planned division line, thereby dividing the functional layer. After performing the functional layer division step, an auxiliary groove forming step is performed, in which a laser beam is irradiated from the two laser-processed grooves along the division line on the widthwise side of the division line to form a plurality of auxiliary grooves that do not reach the substrate, After performing the auxiliary groove forming step, a segmented groove forming step is performed to form a segmented groove between the two laser-processed grooves, It has, The auxiliary groove formation step is characterized by sequentially forming multiple auxiliary grooves toward the outside in the width direction of the planned division line, from a position where they partially overlap with the laser-processed groove formed in the functional layer division step to a position where they do not overlap with the laser-processed groove. A method for manufacturing chips.

2. The dividing groove formation step is characterized by forming the dividing groove by irradiating a laser beam along the dividing line between the two laser-processed grooves formed along the dividing line, A method for manufacturing a chip according to claim 1.

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