Semiconductor equipment

Abstract

To provide a semiconductor device capable of improving characteristics.SOLUTION: According to an embodiment, a semiconductor device includes a first element. The first element includes a first conductive member, a second conductive member, a third conductive member, a first semiconductor member, and third conductive member wiring. The first conductive member includes a first conductive portion and a second conductive portion. The second conductive member includes a third conductive portion and a fourth conductive portion. A direction from the first conductive portion to the third conductive portion is along a third direction. A direction from the second conductive portion to the fourth conductive portion is along a first direction. The first semiconductor member is located between the first conductive portion and the third conductive portion in the third direction, and is located between the second conductive portion and the fourth conductive portion in the first direction. The third conductive member wiring is electrically connected to the third conductive member. At least a part of the third conductive member wiring passes through one of a first position between the first semiconductor member and the third conductive portion or a second position between the first semiconductor member and the first conductive portion.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present invention relate to semiconductor devices.

Background Art

[0002] In semiconductor devices, improvement of characteristics is desired.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide a semiconductor device capable of improving characteristics.

Means for Solving the Problems

[0005] According to embodiments of the present invention, the semiconductor device includes a first element. The first element includes a first conductive member, a second conductive member, a first semiconductor member, a third conductive member, and wiring for the third conductive member. The first conductive member includes a first conductive portion including a first surface and a second conductive portion including a second surface. The first surface is aligned with a first direction and a second direction. The second direction intersects the first direction. The second surface is aligned with a second direction and a third direction. The third direction intersects a plane including the first and second directions. The second conductive member includes a third conductive portion including a third surface and a fourth conductive portion including a fourth surface. The third surface is aligned with the first and second directions. The fourth surface is aligned with the second and third directions. The direction from the first conductive portion to the third conductive portion is aligned with the third direction. The direction from the second conductive portion to the fourth conductive portion is aligned with the first direction. The fourth conductive portion includes a counter conductive portion. The first semiconductor member is of the first conductivity type. The first semiconductor member is located between the first conductive portion and the third conductive portion in the third direction. The first semiconductor member is located between the second conductive portion and the fourth conductive portion in the first direction. The first semiconductor member includes a first partial region, a second partial region and a third partial region. The direction from the first partial region to the second partial region is along the second direction. The third partial region is located between the first partial region and the counter conductive portion in the first direction. The third partial region includes a counter surface facing the counter conductive portion. The direction from the counter surface to the third conductive member is along the second direction. The third conductive member wiring is electrically connected to the third conductive member. At least a portion of the third conductive member wiring passes through either a first position between the first semiconductor member and the third conductive portion, or a second position between the first semiconductor member and the first conductive portion. [Brief explanation of the drawing]

[0006] [Figure 1] Figure 1 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. [Figure 2] Figure 2 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 3]Figure 3 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 4] Figure 4 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. [Figure 5] Figure 5 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 6] Figure 6 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. [Figure 7] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 8] Figure 8 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. [Figure 9] Figure 9 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. [Figure 10] Figure 10 is a schematic plan view illustrating a semiconductor device according to the first embodiment. [Figure 11] Figure 11 is a schematic diagram illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 12] Figures 12(a) and 12(b) are schematic diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 13] Figure 13 is a schematic diagram illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 14] Figures 14(a) and 14(b) are schematic diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 15] Figures 15(a) and 15(b) are schematic diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 16] Figures 16(a) and 16(b) are schematic perspective views illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 17] Figure 17 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 18] Figure 18 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 19] FIG. 19(a) and FIG. 19(b) are schematic diagrams illustrating a semiconductor device according to the second embodiment. [Figure 20] FIG. 20 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. [Figure 21] FIG. 21 is a circuit diagram illustrating a semiconductor device according to the second embodiment.

Embodiments of the Invention

[0007] [ Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationships between the thicknesses and widths of the respective parts, the ratios of the sizes between the parts, etc. are not necessarily the same as the actual ones. Even when representing the same part, the dimensions and ratios may be represented differently in the drawings. In the present specification and each figure, the same reference numerals are assigned to the same elements as those described above with respect to the previously shown figures, and the detailed description will be appropriately omitted.

[0008] (First Embodiment) FIG. 1 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. FIG. 2 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in FIG. 1, the semiconductor device 110 according to the embodiment includes a first element 10A. As will be described later, the semiconductor device according to the embodiment may include a plurality of elements 10E. The first element 10A corresponds to one of the plurality of elements 10E.

[0009] The first element 10A includes a first conductive member 51, a second conductive member 52, a third conductive member 53, a first semiconductor member 11, and a third conductive member wiring 53L.

[0010] The first conductive member 51 includes a first conductive portion 51a and a second conductive portion 51b. The first conductive portion 51a includes a first surface f1. The second conductive portion 51b includes a second surface f2. The first surface f1 extends along a first direction D1 and a second direction D2. The second direction D2 intersects the first direction D1. The second surface f2 extends along the second direction D2 and a third direction D3. The third direction D3 intersects a plane (D1-D2 plane) including the first direction D1 and the second direction D2.

[0011] The first direction D1 is, for example, the Y-axis direction. One direction perpendicular to the Y-axis direction is defined as the X-axis direction. A direction perpendicular to the Y-axis direction and the X-axis direction is defined as the Z-axis direction. The second direction D2 is, for example, the X-axis direction. The third direction D3 is, for example, the Z-axis direction.

[0012] The second conductive member 52 includes a third conductive portion 52c and a fourth conductive portion 52d. The third conductive portion 52c includes a third surface f3. The fourth conductive portion 52d includes a fourth surface f4. The third surface f3 extends along the first direction D1 and the second direction D2. The fourth surface f4 extends along the second direction D2 and the third direction D3. The direction from the first conductive portion 51a to the third conductive portion 52c is along the third direction D3. The direction from the second conductive portion 51b to the fourth conductive portion 52d is along the first direction D1. The fourth conductive portion 52d includes an opposing conductive portion 52f.

[0013] The first semiconductor member 11 has a first conductivity type. The first conductivity type is one of an n-type and a p-type. The first conductivity type is, for example, n-type.

[0014] The first semiconductor member 11 is located between the first conductive portion 51a and the third conductive portion 52c in the third direction D3. The first semiconductor member 11 is located between the second conductive portion 51b and the fourth conductive portion 52d in the first direction D1.

[0015] The first semiconductor member 11 includes a first partial region 11a, a second partial region 11b, and a third partial region 11c. The direction from the first partial region 11a to the second partial region 11b is along the second direction D2. The third partial region 11c is located between the first partial region 11a and the opposing conductive portion 52f in the first direction D1. The third partial region 11c includes an opposing surface 11cf. The opposing surface 11cf faces the opposing conductive portion 52f.

[0016] For example, the opposing surface 11cf extends along the third direction D3. The opposing surface 11cf is in contact with, for example, the opposing conductive portion 52f. The direction from the opposing surface 11cf to the third conductive member 53 is along the second direction D2 (see Figure 2).

[0017] The third conductive member wiring 53L is electrically connected to the third conductive member 53. At least a portion of the third conductive member wiring 53L passes through a first position ps1 between the first semiconductor member 11 and the third conductive portion 52c. As will be described later, at least a portion of the third conductive member wiring 53L may also pass through a second position between the first semiconductor member 11 and the first conductive portion 51a. In the example of Figure 1, the third conductive member wiring 53L passes through the first position ps1.

[0018] The third conductive member 53 extends along the third direction D3. In this example, an intermediate connection portion 53C is provided. The intermediate connection portion 53C extends along the third direction D3. The third conductive member wiring 53L is electrically connected to the third conductive member 53 by the intermediate connection portion 53C.

[0019] In this example, a first insulating member 41 is provided. The first insulating member 41 includes a first insulating region 41a. At least a portion of the first insulating region 41a lies between the opposing surface 11cf and the third conductive member 53 in the second direction D2 (see Figure 2).

[0020] The current flowing between the first conductive member 51 and the second conductive member 52 can be controlled by the potential of the third conductive member 53. The potential of the third conductive member 53 may be a potential referenced to the potential of the second conductive member 52. The first conductive member 51 functions, for example, as a drain electrode. The second conductive member 52 functions, for example, as a source electrode. The third conductive member 53 functions, for example, as a gate electrode. The first insulating region 41a functions, for example, as a gate insulating film. The semiconductor device 110 is, for example, a transistor.

[0021] As shown in Figure 1, the first element 10A includes a third conductive connection portion 53EC. The third conductive connection portion 53EC is electrically connected to the third conductive member wiring 53L. At least a portion of the third conductive connection portion 53EC extends along the third direction D3. The direction from the first semiconductor member 11 to the third conductive connection portion 53EC intersects with the third direction D3.

[0022] As shown in Figure 1, the first element 10A includes a first element surface 55F. The first element surface 55F aligns with the plane (D1-D2 plane) described above. In one example, the first element surface 55F is the mounting surface of the semiconductor device 110. For example, the first element surface 55F faces the mounting member.

[0023] As shown in Figure 1, the third conductive connection portion 53EC reaches the first element surface 55F. The third conductive connection portion 53EC is exposed on the first element surface 55F. The end of the third conductive connection portion 53EC becomes the third electrode terminal 53E. The third electrode terminal 53E becomes, for example, the gate electrode terminal.

[0024] As shown in Figure 1, the first element 10A further includes a second conductive connection portion 52EC. The second conductive connection portion 52EC is electrically connected to a third conductive portion 52c. At least a portion of the second conductive connection portion 52EC extends along a third direction D3. The second conductive connection portion 52EC is exposed on the first element surface 55F. The end of the second conductive connection portion 52EC becomes a second electrode terminal 52E. The second electrode terminal 52E becomes, for example, a source electrode terminal.

[0025] For example, the first conductive portion 51a is exposed on the first element surface 55F. The first conductive portion 51a becomes the first electrode terminal 51E. The first electrode terminal 51E may function as the drain electrode terminal.

[0026] A portion of the first conductive member 51 is exposed to the outside of the semiconductor package on the first element surface 55F. Conductive portions electrically connected to the second conductive member 52 and the third conductive member 53 are exposed to the outside of the semiconductor package on the first element surface 55F. The conductive members exposed to the outside of the semiconductor package function as terminals of the first element 10A.

[0027] As shown in Figure 1, the first element 10A may further include a second insulating member 42 and a third insulating member 43. The second insulating member 42 is located between the first conductive portion 51a and the first semiconductor member 11. The second insulating member 42 electrically insulates the first conductive portion 51a from the first semiconductor member 11. The third insulating member 43 is located between the first semiconductor member 11 and the third conductive portion 52c. The third insulating member 43 electrically insulates the first semiconductor member 11 from the third conductive portion 52c. In this example, the third conductive member wiring 53L passes through the third insulating member 43. The third insulating member 43 is provided around a first position ps1 through which at least a portion of the third conductive member wiring 53L passes.

[0028] In the semiconductor device 110 illustrated in Figure 1, the first element 10A is, for example, a drain-down semiconductor device (semiconductor package).

[0029] For example, the third sub-region 11c and the opposing conductive portion 52f may be in Schottky contact. The semiconductor device 110 is a Schottky contact type transistor.

[0030] For example, a Schottky barrier is formed at the interface between the third partial region 11c and the opposing conductive portion 52f. The thickness of the Schottky barrier can be controlled by the potential of the third conductive member 53. When the Schottky barrier is thick, virtually no current flows. This results in an off state. By controlling the potential of the third conductive member 53, the Schottky barrier becomes thinner, and for example, a tunnel current flows. The flow of the tunnel current results in an on state. For example, a low on-resistance can be easily obtained. According to this embodiment, a semiconductor device with improved characteristics can be provided.

[0031] In this embodiment, the body diode is a Schottky diode. Recovery can be accelerated. For example, the gate length can be shortened. This results in a small gate capacitance. This results in high-speed switching. Losses are small. For example, gate driver losses can be reduced. For example, switching can be accelerated. For example, turn-on losses and turn-off losses can be suppressed. In this embodiment, transistors can be provided at a high density. The channel area per unit area can be increased. This results in, for example, reduced on-resistance. Large currents can be switched.

[0032] In embodiments, the first semiconductor member 11 may include, for example, at least one selected from the group consisting of silicon (Si), nitride semiconductors (e.g., GaN), silicon carbide (SiC), and oxide semiconductors (e.g., GaO). If the first semiconductor member 11 includes silicon, the first conductivity type impurity may include, for example, at least one selected from the group consisting of phosphorus, arsenic, and antimony.

[0033] In one example, if the third partial region 11c of the first semiconductor member 11 contains silicon, the opposing conductive portion 52f of the second conductive member 52 contains, for example, at least one selected from the group consisting of Ti, W, Mo, Ta, Zr, Al, Sn, V, Re, Os, Ir, Pt, Pd, Rh, Ru, Nb, Sr, and Hf.

[0034] The third conductive member 53 may include, for example, at least one of polysilicon and metal. The first conductive member 51 includes, for example, Al, Cu, Mo, W, Ta, Co, Ru, Ti, and Pt. The second conductive member 52 includes, for example, at least one selected from the group consisting of Al, Cu, Mo, W, Ta, Co, Ru, Ti, and Pt.

[0035] As shown in Figures 1 and 2, the semiconductor device 110 may further include a second semiconductor region 12. The second semiconductor region 12 is of a second conductivity type. The second conductivity type is the other of n-type and p-type. For example, the second conductivity type is p-type. The second semiconductor region 12 is located between a part of the third sub-region 11c and a part of the opposing conductive portion 52f in a first direction D1 (Y-axis direction). Another part of the third sub-region 11c is located between the second semiconductor region 12 and the first insulating region 41a in a second direction D2 (for example, X-axis direction).

[0036] The provision of the second semiconductor region 12 allows for, for example, a reduction in leakage current. If the second semiconductor region 12 contains silicon, the impurity of the second conductivity type includes, for example, at least one selected from the group consisting of boron, gallium, and indium. As will be described later, the second semiconductor region 12 may be omitted.

[0037] As shown in Figure 2, the first element 10A may further include a fourth insulating member 44. The fourth insulating member 44 is located, for example, between the third conductive member 53 and the fourth conductive portion 52d. The fourth insulating member 44 electrically insulates the third conductive member 53 and the fourth conductive portion 52d.

[0038] As shown in Figure 2, the first element 10A may further include a fourth conductive member 54. The first semiconductor member 11 may further include a fourth partial region 11d. In the second direction D2, the second partial region 11b lies between the first partial region 11a and the fourth partial region 11d. The direction from the fourth partial region 11d to the fourth conductive member 54 is along the first direction D1. The direction from at least a portion of the third partial region 11c to the fourth conductive member 54 is along the second direction D2.

[0039] The first insulating member 41 includes a second insulating region 41b. The second insulating region 41b is located between at least a portion of the third partial region 11c and the fourth conductive member 54 in the second direction D2. The position of at least a portion of the fourth conductive member 54 in the first direction D1 is between the position of the fourth partial region 11d in the first direction D1 and the position of the third conductive member 53 in the first direction D1.

[0040] The fourth conductive member 54 is electrically connected to the second conductive member 52. Alternatively, the fourth conductive member 54 can be electrically connected to the second conductive member 52. For example, the fourth conductive member 54 is electrically connected to the second conductive member 52 by wiring 54L. For example, a terminal 54T electrically connected to the fourth conductive member 54 may be provided. For example, a terminal 52T electrically connected to the second conductive member 52 may be provided. These terminals may be electrically connected by wiring (for example, wiring 54L).

[0041] The fourth conductive member 54 functions, for example, as a field plate. For instance, it suppresses localized concentration of the electric field, resulting in more stable operation.

[0042] As shown in Figure 2, the first semiconductor member 11 may include a fifth partial region 11e. The fifth partial region 11e is provided between the second conductive portion 51b and the first partial region 11a, between the second conductive portion 51b and the second partial region 11b, and between the second conductive portion 51b and the fourth partial region 11d. The impurity concentration of the first conductivity type in the fifth partial region 11e is higher than the impurity concentration of the first conductivity type in the first partial region 11a. A low electrical resistance is obtained between the first semiconductor member 11 and the second conductive portion 51b.

[0043] As shown in Figure 2, the first element 10A may include a plurality of opposing conductive portions 52f and a plurality of fourth conductive members 54. The position of one of the plurality of opposing conductive portions 52f in a second direction D2 lies between the position of one of the plurality of fourth conductive members 54 in a second direction D2 and the position of another of the plurality of fourth conductive members 54 in a second direction D2. The other of the plurality of fourth conductive members 54 is adjacent to the one of the plurality of fourth conductive members 54.

[0044] For example, the position of one of the multiple fourth conductive members 54 in a second direction D2 lies between the position of one of the multiple opposing conductive parts 52f in a second direction D2 and the position of another of the multiple opposing conductive parts 52f in a second direction D2. The other of the multiple opposing conductive parts 52f is adjacent to the one of the multiple opposing conductive parts 52f.

[0045] Figure 3 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in Figure 3, in the semiconductor device 110a according to this embodiment, the second semiconductor region 12 is omitted. The configuration of the semiconductor device 110a, excluding the second semiconductor region 12, may be the same as that of the semiconductor device 110. In the semiconductor device 110a, for example, it is easier to obtain low on-resistance. A semiconductor device with improved characteristics can be provided. For example, switching can be made faster. For example, turn-on losses and turn-off losses can be suppressed. The channel area per unit area can be increased. Large currents can be switched.

[0046] Figure 4 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. As shown in Figure 4, the semiconductor device 111 according to this embodiment includes at least one element 10E. If multiple elements 10E are provided, the element 10E illustrated in Figure 4 may be considered as a second element 10B. In the semiconductor device according to this embodiment, if only one element 10E is provided, the element 10E illustrated in Figure 4 may be considered as a first element 10A. Hereinafter, the explanation will be given assuming that the element 10E illustrated in Figure 4 is the first element 10A.

[0047] As shown in Figure 4, in the semiconductor device 111, the first element 10A includes a first conductive member 51, a second conductive member 52, a third conductive member 53, a first semiconductor member 11, and a third conductive member wiring 53L. In this example, at least a portion of the third conductive member wiring 53L passes through a second position ps2 between the first semiconductor member 11 and the first conductive portion 51a. The configuration of the semiconductor device 111, excluding this, may be the same as that of the semiconductor device 110.

[0048] In the semiconductor device 111 illustrated in Figure 4, the first element 10A (or the second element 10B) is, for example, a source-down semiconductor device (semiconductor package).

[0049] In this example as well, the third conductive member 53 extends along the third direction D3. The third conductive member wiring 53L is electrically connected to the third conductive member 53 by an intermediate connection portion 53C. The first element 10A includes a third conductive connection portion 53EC. The third conductive connection portion 53EC is electrically connected to the third conductive member wiring 53L. At least a portion of the third conductive connection portion 53EC extends along the third direction D3. The direction from the first semiconductor member 11 to the third conductive connection portion 53EC intersects with the third direction D3. The third conductive connection portion 53EC reaches the first element surface 55F. The third conductive connection portion 53EC is exposed on the first element surface 55F. The end of the third conductive connection portion 53EC becomes a third electrode terminal 53E. The third electrode terminal 53E is, for example, a gate electrode terminal.

[0050] As shown in Figure 4, in the semiconductor device 111, the first element 10A further includes a first conductive connection portion 51EC. The first conductive connection portion 51EC is electrically connected to the first conductive portion 51a. At least a portion of the first conductive connection portion 51EC extends along a third direction D3. The first conductive connection portion 51EC is exposed on the first element surface 55F. The end of the first conductive connection portion 51EC becomes a first electrode terminal 51E. The first electrode terminal 51E becomes, for example, a drain electrode terminal.

[0051] For example, the third conductive portion 52c is exposed on the first element surface 55F. The third conductive portion 52c becomes the second electrode terminal 52E. The second electrode terminal 52E may function, for example, as the source electrode terminal.

[0052] As shown in Figure 4, the first element 10A (or the second element 10B) includes a second insulating member 42 and a third insulating member 43. The second insulating member 42 is located between the first conductive portion 51a and the first semiconductor member 11. The third insulating member 43 is located between the first semiconductor member 11 and the third conductive portion 52c. The third conductive member wiring 53L passes through, for example, the second insulating member 42. The second insulating member 42 is provided around the second position ps2 through which the third conductive member wiring 53L passes.

[0053] Low on-resistance can be obtained in the semiconductor device 111 as well. According to the embodiment, a semiconductor device with improved characteristics can be provided. For example, recovery can be made faster. For example, the gate length can be shortened. High-speed switching can be obtained. Losses are small. For example, gate driver losses can be reduced. Switching can be made faster. For example, turn-on losses and turn-off losses can be suppressed. Transistors can be provided at a high density. The channel area per unit area can be increased. For example, on-resistance can be reduced. Large currents can be switched. In the configuration of the semiconductor device 111, the second semiconductor region 12 may be omitted.

[0054] In the configuration of the semiconductor device 110 illustrated in Figure 1, the conductive member that becomes the first conductive portion 51a is electrically connected to the second conductive portion 51b. On the other hand, the conductive member that becomes the third conductive portion 52c is electrically connected to the fourth conductive portion 52d.

[0055] For example, when manufacturing the semiconductor device 110, by changing the pattern of the mask used for processing, the conductive member that becomes the first conductive portion 51a can be electrically connected to the fourth conductive portion 52d, and the conductive member that becomes the third conductive portion 52c can be electrically connected to the second conductive portion 51b. By changing the mask pattern, the semiconductor device 110 and semiconductor device 111 can be easily manufactured. For example, drain-down semiconductor packages or source-down semiconductor packages can be easily obtained.

[0056] Figure 5 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. Figure 6 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. As shown in Figures 5 and 6, the semiconductor device 110A according to this embodiment includes a resin member 45. The configuration of the semiconductor device 110A, excluding the resin member, may be the same as that of the semiconductor device 110 (or semiconductor device 110a). As shown in Figure 5, the resin member 45 is provided around the second conductive member 52. The resin member 45 includes the first element surface 55F. In the semiconductor device 110A, the first conductive member 51 (e.g., drain electrode) is located between the first element surface 55F and the second conductive member 52 (e.g., source electrode). The semiconductor device 110A is a drain-down semiconductor package. The first element surface 55F is the mounting surface in the semiconductor device 110A.

[0057] As shown in Figure 6, the first electrode terminal 51E, the second electrode terminal 52E, and the third electrode terminal 53E are exposed on the first element surface 55F. At least a portion of the first electrode terminal 51E, at least a portion of the second electrode terminal 52E, and at least a portion of the third electrode terminal 53E are not covered by the resin member 45. In the cross-sectional view of Figure 5, a portion of the second electrode terminal 52E overlaps with the third electrode terminal 53E. The drain-down semiconductor package has a general semiconductor device structure. It is easy to handle.

[0058] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. Figure 8 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. As shown in Figures 7 and 8, the semiconductor device 111A according to this embodiment includes a resin member 45. The configuration of the semiconductor device 111A, excluding the resin member, may be the same as that of the semiconductor device 111. As shown in Figure 7, the resin member 45 is provided around the first conductive member 51. The resin member 45 includes the first element surface 55F. In the semiconductor device 111A, the second conductive member 52 (e.g., source electrode) is located between the first element surface 55F and the first conductive member 51 (e.g., drain electrode). The semiconductor device 111A is a source-down semiconductor package. The first element surface 55F is the mounting surface in the semiconductor device 110A.

[0059] As shown in Figure 8, the first electrode terminal 51E, the second electrode terminal 52E, and the third electrode terminal 53E are exposed on the first element surface 55F. The resin member 45 includes the first element surface 55F. At least a portion of the first electrode terminal 51E, at least a portion of the second electrode terminal 52E, and at least a portion of the third electrode terminal 53E are not covered by the resin member 45. In the cross-sectional view of Figure 7, a portion of the second electrode terminal 52E overlaps with the third electrode terminal 53E. High heat dissipation can be obtained in the source-down semiconductor package. For example, low wiring resistance is easily obtained. For example, low contact resistance is easily obtained. For example, low thermal resistance is easily obtained.

[0060] Figure 9 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. As shown in Figure 9, the semiconductor device 112 according to this embodiment includes a first element 10A illustrated in Figure 1 and a second element 10B illustrated in Figure 4. The first element 10A is a drain-down semiconductor device. The second element 10B is, for example, a source-down semiconductor device. A resin member 45 is provided around these multiple elements 10E (the first element 10A and the second element 10B). The first element 10A may have the configuration of a semiconductor device 110A. The second element 10B may have the configuration of a semiconductor device 111A.

[0061] Thus, the semiconductor device 112 includes a first element 10A and a second element 10B. The first element 10A has, for example, the configuration illustrated in Figure 1. The second element 10B has the configuration illustrated in Figure 4.

[0062] As shown in Figure 4, in the second element 10B, the third conductive member wiring 53L passes through the second position ps2. The second element 10B includes the first conductive member 51 of the second element 10B, the second conductive member 52 of the second element 10B, the first semiconductor member 11 of the second element 10B, the third conductive member 53 of the second element 10B, and the third conductive member wiring 53L of the second element 10B.

[0063] As shown in Figure 4, the first conductive member 51 of the second element 10B includes a first conductive portion 51a of the second element 10B that includes a first surface f1 of the second element 10B, and a second conductive portion 51b of the second element 10B that includes a second surface f2 of the second element 10B. The first surface f1 of the second element 10B extends along a first direction D1 and a second direction D2 of the second element 10B. The second direction D2 of the second element 10B intersects with the first direction D1 of the second element 10B. The second surface f2 of the second element 10B extends along a second direction D2 and a third direction D3 of the second element 10B. The third direction D3 of the second element 10B intersects with the above-mentioned plane (D1-D2 plane).

[0064] As shown in Figure 4, the second conductive member 52 of the second element 10B includes a third conductive portion 52c of the second element 10B that includes a third surface f3 of the second element 10B, and a fourth conductive portion 52d of the second element 10B that includes a fourth surface f4 of the second element 10B. The third surface f3 of the second element 10B extends along the first direction D1 and the second direction D2 of the second element 10B. The fourth surface f4 of the second element 10B extends along the second direction D2 and the third direction D3 of the second element 10B. The direction from the first conductive portion 51a of the second element 10B to the third conductive portion 52c of the second element 10B is along the third direction D3 of the second element 10B. The direction from the second conductive portion 51b of the second element 10B to the fourth conductive portion 52d of the second element 10B is along the first direction D1 of the second element 10B. The fourth conductive portion 52d of the second element 10B includes the opposing conductive portion 52f of the second element 10B.

[0065] As shown in Figure 4, the first semiconductor member 11 of the second element 10B is of the first conductivity type. The first semiconductor member 11 of the second element 10B is located between the first conductive portion 51a and the third conductive portion 52c of the second element 10B in the third direction D3 of the second element 10B. The first semiconductor member 11 of the second element 10B is located between the second conductive portion 51b and the fourth conductive portion 52d of the second element 10B in the first direction D1 of the second element 10B.

[0066] As shown in Figure 4, the first semiconductor member 11 of the second element 10B includes a first partial region 11a, a second partial region 11b, and a third partial region 11c of the second element 10B. The direction from the first partial region 11a to the second partial region 11b of the second element 10B is along the second direction D2 of the second element 10B. The third partial region 11c of the second element 10B is located between the first partial region 11a and the opposing conductive portion 52f of the second element 10B in the first direction D1 of the second element 10B. The third partial region 11c of the second element 10B includes a facing surface 11cf of the second element 10B that faces the opposing conductive portion 52f of the second element 10B. The facing surface 11cf of the second element 10B is in contact with the opposing conductive portion 52f of the second element 10B.

[0067] As shown in Figure 4, the direction from the opposing surface 11cf of the second element 10B to the third conductive member 53 of the second element 10B is along the second direction D2 of the second element 10B.

[0068] As shown in Figure 4, the third conductive member wiring 53L of the second element 10B is electrically connected to the third conductive member 53 of the second element 10B. At least a portion of the third conductive member wiring 53L of the second element 10B passes through the position between the first semiconductor member 11 of the second element 10B and the first conductive portion 51a of the second element 10B (the second position ps2 of the second element 10B).

[0069] In Figure 9, the third electrode terminal 53E of the first element 10A overlaps with the first electrode terminal 51E of the first element 10A.

[0070] In this embodiment, the second element 10B is electrically connected in series with the first element 10A. The second conductive member 52 of the first element 10A and the first conductive member 51 of the second element 10B are electrically connected by a connecting conductive member 58C. For example, current flows through a path passing through the first electrode terminal 51E of the first element 10A, the second conductive member 52 of the first element 10A, the connecting conductive member 58C, the first conductive member 51 of the second element 10B, and the second electrode terminal 52E of the second element 10B.

[0071] Figure 10 is a schematic plan view illustrating a semiconductor device according to the first embodiment. Figure 10 illustrates the first element surface 55F of a semiconductor device 113 according to an embodiment. The semiconductor device 113 includes a first element 10A and a second element 10B. The first element 10A is a drain-down semiconductor device. The second element 10B is, for example, a source-down semiconductor device. The first conductive member 51 of the first element 10A is electrically connected to the second conductive member 52 of the second element 10B by a connecting conductive member 58C. The connecting conductive member 58C is, for example, a switch node.

[0072] The first conductive member 51 of the second element 10B is set to, for example, a reference potential (ground potential, 0V). The second conductive member 52 of the first element 10A is set to, for example, a high potential (+V). The first element 10A is, for example, a high-side element. The second element 10B is, for example, a low-side element.

[0073] In source-down semiconductor devices, for example, the area on the source side can be easily increased. By using a source-down semiconductor device as the low-side element, for example, high heat dissipation can be easily obtained. For example, the switch node (connecting conductive member 58C) can be made thinner. For example, radiated noise can be reduced.

[0074] Figures 11, 12(a), 12(b), 13, 14(a), 14(b), 15(a), and 15(b) are schematic diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. Figures 11, 13, 15(a), and 15(b) are perspective views. Figures 12(a), 12(b), 14(a), and 14(b) are cross-sectional views. Figures 12(a), 12(b), 14(a), and 14(b) correspond to cross-sections of the portion including the first semiconductor member 11.

[0075] As shown in Figure 11, a support 50S and a semiconductor layer 11u are prepared. The semiconductor layer 11u is provided on the support surface 50F of the support 50S. The semiconductor layer 11u becomes the first semiconductor member 11. The support 50S includes a substrate portion 50u and an insulating layer 50x. The substrate portion 50u is, for example, a silicon substrate. The insulating layer 50x is provided on the substrate portion 50u. The insulating layer 50x is, for example, a silicon oxide layer (for example, a thermal oxide film). The upper surface of the insulating layer 50x corresponds to the support surface 50F. As will be described later, the insulating layer 50x may become a second insulating member 42 or a third insulating member 43.

[0076] As shown in Figure 12(a), a portion of the semiconductor layer 11u is removed by photolithography and RIE (Reactive Ion Etching) to form a trench 40T. The trench 40T extends in the Z-axis direction.

[0077] Next, an insulating film 40i (e.g., silicon oxide) is formed inside the trench 40T, and a conductive material (e.g., polysilicon) is embedded in the remaining area by CVD (Chemical Vapor Deposition) or the like. The first insulating member 41 is obtained from the insulating film 40i. The third conductive member 53, the fourth conductive member 54, and the third conductive member wiring 53L are obtained from the conductive material.

[0078] In this example, as shown in Figure 12(b), a portion of the fourth conductive member 54 may be removed to narrow the width of that portion. After this, an insulating film 40i (e.g., silicon oxide) is formed inside the trench 40T.

[0079] As a result, the third insulating member 43 is formed, as shown in Figure 13. In Figure 13, the intermediate connection portion 53C is omitted.

[0080] Subsequently, as shown in Figure 14(a), a portion of the semiconductor layer 11u is removed, and a metal film 52F (e.g., a Ti film) is formed in the removed portion. A portion of the fourth conductive portion 52d is obtained from the metal film 52F. A portion of the fourth conductive portion 52d becomes the opposing conductive portion 52f. The fourth conductive portion 52d is obtained by forming a metal film on the surface of the metal film 52F.

[0081] As shown in Figure 14(b), a portion of the semiconductor layer 11u is removed. In this example, an impurity of the first conductivity type is introduced into the removed portion of the semiconductor layer 11u. This forms a fifth partial region 11e. A conductive film is formed on the surface of the fifth partial region 11e. This forms a second conductive portion 51b (see Figure 15(a)).

[0082] As shown in Figure 15(a), the insulating layer 50x becomes the second insulating member 42.

[0083] As shown in Figure 15(b), the substrate portion 50u is removed. A conductive film is formed on the surface of the second insulating member 42 that is exposed after the removal of the substrate portion 50u. This forms the first conductive portion 51a in this example. The conductive film may be formed by sputtering or plating. In this example, the first conductive portion 51a is electrically connected to the second conductive portion 51b.

[0084] On the other hand, a conductive layer is provided on an insulating member provided on the first semiconductor member 11. This conductive layer is electrically connected to the fourth conductive portion 52d. This results in the first element 10A (semiconductor device 110) illustrated in Figure 1.

[0085] Figures 16(a) and 16(b) are schematic perspective views illustrating a method for manufacturing a semiconductor device according to the first embodiment. Figures 16(a) and 16(b) correspond to Figures 15(a) and 15(b). As shown in Figure 16(a), after the process in Figure 14(a) above, the second conductive portion 51b is formed on the insulating layer 50x (second insulating member 42), and the fourth conductive portion 52d is formed so as to be in contact with the substrate portion 50u. Such modifications can be made, for example, by changing the pattern of the mask.

[0086] As shown in Figure 16(b), the substrate portion 50u is removed. A conductive film is formed on the surface of the second insulating member 42 that is exposed after the removal of the substrate portion 50u. In this example, a third conductive portion 52c is formed. The third conductive portion 52c is electrically connected to the fourth conductive portion 52d.

[0087] On the other hand, a conductive layer is provided on a conductive member provided on the first semiconductor member 11. This conductive layer is electrically connected to the second conductive portion 51b. This results in the first element 10A (semiconductor device 111) illustrated in Figure 3.

[0088] By changing the pattern of the mask used in processing, semiconductor devices 110 and 111 can be easily manufactured. For example, drain-down semiconductor packages or source-down semiconductor packages can be easily obtained.

[0089] Figure 17 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in Figure 17, the semiconductor device 113 according to this embodiment includes a first element 10A. In this example as well, the first element 10A includes a first conductive member 51, a second conductive member 52, a third conductive member 53, a first semiconductor member 11, and a third conductive member wiring 53L. In the semiconductor device 113, the first semiconductor member 11 includes a first portion p1 and a second portion p2. The configuration of the semiconductor device 113, excluding this, may be the same as the configuration of the semiconductor device 110 or 111.

[0090] The third subregion 11c includes the first positional portion pz1. The first positional portion pz1 is located between the first subregion 11a and the opposing surface 11cf in the first direction D1.

[0091] The first part p1 is connected to the first position part pz1. The second part p2 is connected to the first part p1. The position of the second part p2 in the first direction D1 lies between the position of the second sub-region 11b in the first direction D1 and the position of the first part p1 in the first direction D1. The position of the first part p1 in the second direction D2 lies between the position of the third sub-region 11c in the second direction D2 and the position of the second part p2 in the second direction D2. The direction from the first part p1 to the second part p2 is inclined with respect to the first direction D1.

[0092] By providing these first part p1 and second part p2, localized concentration of the electric field can be suppressed, resulting in more stable operation.

[0093] As shown in Figure 17, the third partial region 11c may further include the second positional portion pz2. The second positional portion pz2 is located between the first partial region 11a and the first positional portion pz1. The direction from the second positional portion pz2 to the second portion p2 is along the second direction D2. A portion of the first insulating member 41 is located between the second positional portion pz2 and the second portion p2 in the second direction D2. Another portion of the first insulating member 41 is provided between the first portion p1 and the fourth conductive member 54, and between the second portion p2 and the fourth conductive member 54.

[0094] As shown in Figure 17, the first semiconductor member 11 includes a third portion p3 and a fourth portion p4. The configuration of the third portion p3 and the fourth portion p4 may be the same as that of the first portion p1 and the second portion p2. The third portion p3 is located between the second portion region 11b and the first portion p1 in the first direction D1. The fourth portion p4 is located between the second portion region 11b and the second portion p2 in the first direction D1. The direction from the third portion p3 to the fourth portion p4 is inclined with respect to the first direction D1. By providing multiple inclined portions, the concentration of the electric field can be further suppressed.

[0095] Figure 18 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in Figure 18, the semiconductor device 114 according to this embodiment includes a first element 10A. In this example, the first element 10A includes a first conductive member 51, a second conductive member 52, a third conductive member 53, a first semiconductor member 11, a third conductive member wiring 53L, and a fifth conductive member 55. The fifth conductive member 55 includes the first portion p1, the second portion p2, the third portion p3, and the fourth portion p4, etc. The configuration of the semiconductor device 114, excluding this, may be the same as the configuration of the semiconductor device 113.

[0096] In the semiconductor device 114, the fifth conductive member 55 further includes a first portion p1 and a second portion p2. The third portion region 11c includes a first position portion pz1. The first position portion pz1 is located between the first portion region 11a and the opposing surface 11cf in a first direction D1. The first portion p1 is connected to the first position portion pz1. The second portion p2 is connected to the first portion p1. The position of the second portion p2 in the first direction D1 is between the position of the second portion region 11b in the first direction D1 and the position of the first portion p1 in the first direction D1. The position of the first portion p1 in the second direction D2 is between the position of the third portion region 11c in the second direction D2 and the position of the second portion p2 in the second direction D2.

[0097] By providing the first portion p1 and the second portion p2 on the fifth conductive member 55, localized concentration of the electric field can be suppressed, resulting in more stable operation.

[0098] In the semiconductor device 114, the third partial region 11c may further include a second positional portion pz2. The second positional portion pz2 is located between the first partial region 11a and the first positional portion pz1. The direction from the second positional portion pz2 to the second portion p2 is along the second direction D2. A portion of the first insulating member 41 is located between the second positional portion pz2 and the second portion p2 in the second direction D2. Another portion of the first insulating member 41 is provided between the first portion p1 and the fourth conductive member 54, and between the second portion p2 and the fourth conductive member 54.

[0099] As shown in Figure 18, the fifth conductive member 55 may include a third portion p3 and a fourth portion p4. The configuration of the third portion p3 and the fourth portion p4 may be the same as that of the first portion p1 and the second portion p2. The third portion p3 is located between the second portion region 11b and the first portion p1 in the first direction D1. The fourth portion p4 is located between the second portion region 11b and the second portion p2 in the first direction D1. The direction from the third portion p3 to the fourth portion p4 is inclined with respect to the first direction D1. By providing multiple inclined portions, the concentration of the electric field can be further suppressed.

[0100] (Second Embodiment) Figures 19(a) and 19(b) are schematic diagrams illustrating a semiconductor device according to the second embodiment. Figure 20 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. Figure 20 corresponds to the Y1-Y2 section in Figure 19(b).

[0101] In Figure 19(a), the third conductive member wiring 53L is omitted. In Figure 19(b), the third conductive member wiring 53L is shown as an example.

[0102] As shown in Figure 19(a), the semiconductor device 120 according to this embodiment includes a first element 10A and a second element 10B. In this example, two first elements 10A and two second elements 10B are provided.

[0103] The two first elements 10A are included, for example, in the high-side element 10H. The two second elements 10B are included, for example, in the low-side element 10L.

[0104] As shown in Figure 19(a), the fourth conductive portion 52d of the second element 10B is located between one of the second conductive portions 51b of the second element 10B and the fourth conductive portion 52d of the first element 10A in the first direction D1. The second conductive portion 51b of the first element 10A is located between the fourth conductive portion 52d of the second element 10B and one of the second conductive portions 51b of the first element 10A in the first direction D1.

[0105] As shown in Figure 19(a), the third conductive member wiring 53L overlaps with the third conductive member 53 in the third direction D3.

[0106] As shown in Figures 19(a) and 20, the first element 10A includes a plurality of second conductive portions 51b of the first element 10A. The fourth conductive portion 52d of the first element 10A is located between one of the plurality of second conductive portions 51b of the first element 10A and another of the plurality of second conductive portions 51b of the first element 10A.

[0107] The second element 10B includes a plurality of fourth conductive portions 52d. The second conductive portion 51b of the second element 10B is located between one of the plurality of fourth conductive portions 52d and another of the plurality of fourth conductive portions 52d.

[0108] As shown in Figure 20, the semiconductor device 120 is provided with a first conductive member electrode 51M and a second conductive member electrode 52M. The first conductive member electrode 51M is electrically connected to the first conductive member 51 (second conductive portion 51b) of the second element 10B. The second conductive member electrode 52M is electrically connected to the second conductive member 52 (fourth conductive portion 52d) of the first element 10A.

[0109] The first element 10A and the second element 10B are electrically connected at the connection point 58N. For example, the electrode 51M for the first conductive member is connected to a high voltage (voltage Vdd), and the electrode 52M for the second conductive member is connected to a low voltage (ground potential GND).

[0110] Figure 21 is a circuit diagram illustrating a semiconductor device according to the second embodiment. As shown in Figure 21, the semiconductor device 120 includes a high-side element 10H and a low-side element 10L. These elements are connected in series. According to the semiconductor device 120 of this embodiment, a "2 in 1 package" can be easily obtained.

[0111] The embodiment may include the following configuration (e.g., proposed technical details). (Composition 1) It comprises a first element, and the first element is A first conductive member comprising a first conductive portion including a first surface and a second conductive portion including a second surface, wherein the first surface is aligned along a first direction and a second direction, the second direction intersects the first direction, and the second surface is aligned along a second direction and a third direction, the third direction intersects a plane including the first direction and the second direction, A second conductive member comprising a third conductive portion including a third surface and a fourth conductive portion including a fourth surface, wherein the third surface is aligned along the first and second directions, the fourth surface is aligned along the second and third directions, the direction from the first conductive portion to the third conductive portion is aligned along the third direction, the direction from the second conductive portion to the fourth conductive portion is aligned along the first direction, and the fourth conductive portion includes an opposing conductive portion. A first semiconductor member of a first conductivity type, wherein the first semiconductor member is located between the first conductive portion and the third conductive portion in the third direction, the first semiconductor member is located between the second conductive portion and the fourth conductive portion in the first direction, the first semiconductor member includes a first partial region, a second partial region and a third partial region, the direction from the first partial region to the second partial region is along the second direction, the third partial region is located between the first partial region and the opposing conductive portion in the first direction, and the third partial region includes an opposing surface facing the opposing conductive portion, A third conductive member, wherein the direction from the opposing surface to the third conductive member is along the second direction, A third conductive member wiring electrically connected to the third conductive member, wherein at least a portion of the third conductive member wiring passes through either a first position between the first semiconductor member and the third conductive portion, or a second position between the first semiconductor member and the first conductive portion. Semiconductor equipment, including (Configuration 2) The semiconductor device according to configuration 1, wherein the third partial region and the opposing conductive portion are in Schottky contact. (Composition 3) The first element further includes a third conductive connection portion electrically connected to the third conductive member wiring, The third conductive connection portion extends along the third direction, The semiconductor device according to configuration 2, wherein the direction from the first semiconductor member to the third conductive connection portion intersects with the third direction. (Composition 4) Further equipped with resin components, The semiconductor device according to configuration 3, wherein at least a portion of the third conductive connection portion is not covered by the resin member. (Composition 5) The first element further includes a second conductive connection portion electrically connected to the third conductive portion, At least a portion of the second conductive connection extends along the third direction, At least a portion of the second conductive connection portion is not covered by the resin member, The semiconductor device according to configuration 4, wherein at least a portion of the third conductive member wiring passes through the first position. (Composition 6) The semiconductor device according to configuration 5, wherein at least a portion of the first conductive portion is not covered by the resin member. (Composition 7) The first element further includes a first conductive connection portion electrically connected to the first conductive portion, At least a portion of the first conductive connection extends along the third direction, At least a portion of the first conductive connection portion is not covered by the resin member, The semiconductor device according to configuration 4, wherein at least a portion of the third conductive member wiring passes through the second position. (Composition 8) The semiconductor device according to configuration 7, wherein at least a portion of the third conductive portion is not covered by the resin member. (Composition 9) The first element further includes a first insulating member including a first insulating region, A semiconductor device according to any one of configurations 1 to 8, wherein at least a portion of the first insulating region is located between the opposing surface and the third conductive member. (Composition 10) The first element further includes a second insulating member and a third insulating member, The second insulating member is located between the first conductive portion and the first semiconductor member. The semiconductor device according to configuration 9, wherein the third insulating member is located between the first semiconductor member and the third conductive portion. (Composition 11) The first element further includes a fourth conductive member, The first semiconductor member further includes a fourth subregion, In the second direction, the second subregion lies between the first subregion and the fourth subregion. The direction from the fourth partial region to the fourth conductive member is along the first direction, The direction from at least a portion of the third partial region to the fourth conductive member is along the second direction, The first insulating member includes a second insulating region, The semiconductor device according to configuration 9 or 10, wherein the second insulating region is located between at least a portion of the third partial region and the fourth conductive member in the second direction. (Composition 12) The aforementioned fourth conductive member is electrically connected to the aforementioned second conductive member, or The semiconductor device according to configuration 11, wherein the fourth conductive member can be electrically connected to the second conductive member. (Composition 13) The first element is, Multiple of the aforementioned opposing conductive parts, Multiple of the above-mentioned fourth conductive members, Equipped with, The position of one of the plurality of opposing conductive portions in the second direction is between the position of one of the plurality of fourth conductive members in the second direction and the position of another of the plurality of fourth conductive members in the second direction. The semiconductor device according to configuration 11 or 12, wherein one of the plurality of fourth conductive members is adjacent to one of the plurality of fourth conductive members. (Composition 14) The first semiconductor member further includes a first portion and a second portion, The third subregion includes the first positional portion, The first position portion is located between the first partial region and the opposing surface in the first direction. The first portion is connected to the first position portion, The second part is connected to the first part, and the position of the second part in the first direction is between the position of the second part region in the first direction and the position of the first part in the first direction. The semiconductor device according to any one of configurations 9 to 13, wherein the position of the first portion in the second direction is between the position of the third portion region in the second direction and the position of the second portion in the second direction. (Composition 15) The first element further includes a fifth conductive member, The fifth conductive member further includes a first portion and a second portion, The third subregion includes the first positional portion, The first position portion is located between the first partial region and the opposing surface in the first direction. The first portion is connected to the first position portion, The second part is connected to the first part, and the position of the second part in the first direction is between the position of the second part region in the first direction and the position of the first part in the first direction. The semiconductor device according to any one of configurations 9 to 13, wherein the position of the first portion in the second direction is between the position of the third portion region in the second direction and the position of the second portion in the second direction. (Composition 16) The third subregion further includes the second positional subregion, The second position portion is located between the first sub-region and the first position portion. The direction from the second position portion to the second portion is along the second direction, A part of the first insulating member is located between the second position portion and the second portion in the second direction, as described in configuration 14 or 15 of the semiconductor device. (Composition 17) Further equipped with a second element, The third conductive member wiring passes through the second position, The second element is, A first conductive member of the second element comprising a first conductive portion of the second element including a first surface of the second element, and a second conductive portion of the second element including a second surface of the second element, wherein the first surface of the second element follows a first direction and a second direction of the second element, the second direction of the second element intersects the first direction of the second element, the second surface of the second element follows a second direction and a third direction of the second element, and the third direction of the second element intersects the plane, A second conductive member of a second element, comprising a third conductive portion of the second element including a third surface of the second element, and a fourth conductive portion of the second element including a fourth surface of the second element, wherein the third surface of the second element follows the first direction and the second direction of the second element, the fourth surface of the second element follows the second direction and the third direction of the second element, the direction from the first conductive portion of the second element to the third conductive portion of the second element follows the third direction of the second element, the direction from the second conductive portion of the second element to the fourth conductive portion of the second element follows the first direction of the second element, and the fourth conductive portion of the second element includes the opposing conductive portion of the second element, A first semiconductor member of the second element of the first conductivity type, wherein the first semiconductor member of the second element is located between the first conductive portion and the third conductive portion of the second element in the third direction of the second element, the first semiconductor member of the second element is located between the second conductive portion and the fourth conductive portion of the second element in the first direction of the second element, the first semiconductor member of the second element includes a first partial region, a second partial region and a third partial region of the second element, the direction from the first partial region to the second partial region of the second element is along the second direction of the second element, the third partial region of the second element is located between the first partial region and the opposing conductive portion of the second element in the first direction of the second element, and the third partial region of the second element includes the opposing surface of the second element facing the opposing conductive portion of the second element, The third conductive member of the second element, wherein the direction from the opposing surface of the second element to the third conductive member of the second element is along the second direction of the second element, A third conductive member wiring of the second element electrically connected to the third conductive member of the second element, wherein at least a portion of the third conductive member wiring of the second element passes through the position between the first semiconductor member of the second element and the first conductive portion of the second element, A semiconductor device as described in any one of configurations 1 to 16, including the device described in any one of configurations 1 to 16. (Composition 18) The fourth conductive portion of the first element is located between the second conductive portion of the first element and the fourth conductive portion of the second element in the first direction. The semiconductor device according to configuration 17, wherein the second conductive portion of the second element is located between the fourth conductive portion of the first element and the fourth conductive portion of the second element in the first direction. (Composition 19) The first element includes a plurality of the second conductive portions of the first element, The fourth conductive portion of the first element is located between one of the plurality of second conductive portions of the first element and another of the plurality of second conductive portions of the first element. The second element includes a plurality of the fourth conductive portions of the second element, The semiconductor device according to configuration 18, wherein the second conductive portion of the second element is located between one of the plurality of fourth conductive portions of the second element and another of the plurality of fourth conductive portions of the second element. According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0112] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element such as conductive members, semiconductor members, insulating members, and wiring included in a semiconductor device is included within the scope of the present invention as long as the present invention can be implemented in the same manner and similar effects can be obtained by appropriately selecting from the range known to those skilled in the art.

[0113] Furthermore, combinations of two or more elements from any of the specific examples, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.

[0114] Furthermore, all semiconductor devices that a person skilled in the art can implement by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0115] Furthermore, within the scope of the concept of the present invention, a person skilled in the art could conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of the present invention.

[0116] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims and their equivalents. [Explanation of Symbols]

[0117] 10A, 10B...First and second elements, 10E...Element, 10H...High-side element, 10L...Low-side element, 11...First semiconductor material, 11a~11e...First to fifth partial regions, 11cf...Opposite surface, 11u...Semiconductor layer, 40T...Trench, 41~44...First to fourth insulating materials, 41a, 41b...First and second insulating regions, 40i...Insulating film, 50F...Support surface, 50S...Support, 50u...Substrate portion, 50x...Insulating layer, 51~55...First to fifth conductive materials, 51E...First electrode terminal, 51EC...First conductive connection portion, 51M...Electrode for first conductive material, 51a, 51b...First and second conductive portions, 52E...Second electrode terminal, 52EC…Second conductive connection part, 52F…Metal film, 52M…Electrode for second conductive member, 52T…Terminal, 52c, 52d…Third and fourth conductive parts, 52f…Opposite conductive part, 53C…Intermediate connection part, 53E…Third electrode terminal, 53EC…Third conductive connection part, 53L…Wiring for third conductive member, 54L…Wiring, 54T…Terminal, 55F…First element surface, 58C…Connecting conductive member, 58N…Connection part, 110~114, 110A, 110a, 111A, 120…Semiconductor device, D1~D3…First to third directions, f1~f4…First to fourth surfaces, p1~p4…First to fourth parts, ps1, ps2…First and second positions, pz1, pz2…First and second position parts

Claims

1. The system comprises a first element, and the first element is A first conductive member comprising a first conductive portion including a first surface and a second conductive portion including a second surface, wherein the first surface follows a first direction and a second direction, the second direction intersects the first direction, the second surface follows a second direction and a third direction, and the third direction intersects a plane including the first direction and the second direction, A second conductive member comprising a third conductive portion including a third surface and a fourth conductive portion including a fourth surface, wherein the third surface is aligned along the first and second directions, the fourth surface is aligned along the second and third directions, the direction from the first conductive portion to the third conductive portion is aligned along the third direction, the direction from the second conductive portion to the fourth conductive portion is aligned along the first direction, and the fourth conductive portion includes an opposing conductive portion. A first semiconductor member of a first conductivity type, wherein the first semiconductor member is located between a first conductive portion and a third conductive portion in the third direction, the first semiconductor member is located between a second conductive portion and a fourth conductive portion in the first direction, the first semiconductor member includes a first partial region, a second partial region and a third partial region, the direction from the first partial region to the second partial region is along the second direction, the third partial region is located between the first partial region and the opposing conductive portion in the first direction, and the third partial region includes a facing surface facing the opposing conductive portion, A third conductive member, wherein the direction from the opposing surface to the third conductive member is along the second direction, A third conductive member wiring electrically connected to the third conductive member, wherein at least a portion of the third conductive member wiring passes through either a first position between the first semiconductor member and the third conductive portion, or a second position between the first semiconductor member and the first conductive portion. Semiconductor equipment, including

2. The semiconductor device according to claim 1, wherein the third partial region and the opposing conductive portion are in Schottky contact.

3. The first element further includes a third conductive connection portion electrically connected to the third conductive member wiring, The third conductive connection portion extends along the third direction, The semiconductor device according to claim 2, wherein the direction from the first semiconductor member to the third conductive connection portion intersects with the third direction.

4. Further equipped with resin components, The semiconductor device according to claim 3, wherein at least a portion of the third conductive connection portion is not covered by the resin member.

5. The first element further includes a second conductive connection portion electrically connected to the third conductive portion, At least a portion of the second conductive connection extends along the third direction, At least a portion of the second conductive connection portion is not covered by the resin member, The semiconductor device according to claim 4, wherein at least a portion of the third conductive member wiring passes through the first position.

6. The semiconductor device according to claim 5, wherein at least a portion of the first conductive portion is not covered by the resin member.

7. The first element further includes a first conductive connection portion electrically connected to the first conductive portion, At least a portion of the first conductive connection extends along the third direction, At least a portion of the first conductive connection portion is not covered by the resin member, The semiconductor device according to claim 4, wherein at least a portion of the third conductive member wiring passes through the second position.

8. The semiconductor device according to claim 7, wherein at least a portion of the third conductive portion is not covered by the resin member.

9. The first element further includes a first insulating member including a first insulating region, The semiconductor device according to claim 1, wherein at least a portion of the first insulating region is located between the opposing surface and the third conductive member.

10. The first element further includes a second insulating member and a third insulating member, The second insulating member is located between the first conductive portion and the first semiconductor member. The semiconductor device according to claim 9, wherein the third insulating member is located between the first semiconductor member and the third conductive portion.

11. The first element further includes a fourth conductive member, The first semiconductor member further includes a fourth subregion, In the second direction, the second subregion lies between the first subregion and the fourth subregion. The direction from the fourth partial region to the fourth conductive member is along the first direction, The direction from at least a portion of the third partial region to the fourth conductive member is along the second direction, The first insulating member includes a second insulating region, The semiconductor device according to claim 9, wherein the second insulating region is located between at least a portion of the third partial region and the fourth conductive member in the second direction.

12. The fourth conductive member is electrically connected to the second conductive member, or The semiconductor device according to claim 11, wherein the fourth conductive member can be electrically connected to the second conductive member.

13. The first element is, Multiple of the aforementioned opposing conductive parts, Multiple of the above-mentioned fourth conductive members, Equipped with, The position of one of the plurality of opposing conductive portions in the second direction is between the position of one of the plurality of fourth conductive members in the second direction and the position of another of the plurality of fourth conductive members in the second direction. The semiconductor device according to claim 11, wherein one of the plurality of fourth conductive members is adjacent to one of the plurality of fourth conductive members.

14. The first semiconductor member further includes a first portion and a second portion, The third subregion includes the first position portion, The first position portion is located between the first partial region and the opposing surface in the first direction. The first portion is connected to the first position portion, The second portion is connected to the first portion, and the position of the second portion in the first direction is between the position of the second portion region in the first direction and the position of the first portion in the first direction. The semiconductor device according to claim 9, wherein the position of the first portion in the second direction is between the position of the third portion region in the second direction and the position of the second portion in the second direction.

15. The first element further includes a fifth conductive member, The fifth conductive member further includes a first portion and a second portion, The third subregion includes the first position portion, The first position portion is located between the first partial region and the opposing surface in the first direction. The first portion is connected to the first position portion, The second portion is connected to the first portion, and the position of the second portion in the first direction is between the position of the second portion region in the first direction and the position of the first portion in the first direction. The semiconductor device according to claim 9, wherein the position of the first portion in the second direction is between the position of the third portion region in the second direction and the position of the second portion in the second direction.

16. The third subregion further includes a second positional portion, The second position portion is located between the first partial region and the first position portion. The direction from the second position portion to the second portion is along the second direction, The semiconductor device according to claim 14, wherein a part of the first insulating member is located between the second position portion and the second portion in the second direction.

17. Further equipped with a second element, The third conductive member wiring passes through the second position, The second element is, A first conductive member of the second element comprising a first conductive portion of the second element including a first surface of the second element, and a second conductive portion of the second element including a second surface of the second element, wherein the first surface of the second element follows the first direction and the second direction of the second element, the second direction of the second element intersects the first direction of the second element, the second surface of the second element follows the second direction and the third direction of the second element, and the third direction of the second element intersects the plane, A second conductive member of a second element, comprising a third conductive portion of the second element including a third surface of the second element, and a fourth conductive portion of the second element including a fourth surface of the second element, wherein the third surface of the second element follows the first direction and the second direction of the second element, the fourth surface of the second element follows the second direction and the third direction of the second element, the direction from the first conductive portion of the second element to the third conductive portion of the second element follows the third direction of the second element, the direction from the second conductive portion of the second element to the fourth conductive portion of the second element follows the first direction of the second element, and the fourth conductive portion of the second element includes the opposing conductive portion of the second element, A first semiconductor member of the second element of the first conductivity type, wherein the first semiconductor member of the second element is located between the first conductive portion and the third conductive portion of the second element in the third direction of the second element, the first semiconductor member of the second element is located between the second conductive portion and the fourth conductive portion of the second element in the first direction of the second element, the first semiconductor member of the second element includes a first partial region, a second partial region and a third partial region of the second element, the direction from the first partial region to the second partial region of the second element is along the second direction of the second element, the third partial region of the second element is located between the first partial region and the opposing conductive portion of the second element in the first direction of the second element, and the third partial region of the second element includes the opposing surface of the second element facing the opposing conductive portion of the second element, The third conductive member of the second element, wherein the direction from the opposing surface of the second element to the third conductive member of the second element is along the second direction of the second element, A wiring of the third conductive member of the second element that is electrically connected to the third conductive member of the second element, wherein at least a portion of the wiring of the third conductive member of the second element passes through the position between the first semiconductor member of the second element and the first conductive portion of the second element, A semiconductor device according to any one of claims 1 to 16, including

18. The fourth conductive portion of the first element is located between the second conductive portion of the first element and the fourth conductive portion of the second element in the first direction. The semiconductor device according to claim 17, wherein the second conductive portion of the second element is located between the fourth conductive portion of the first element and the fourth conductive portion of the second element in the first direction.

19. The first element includes a plurality of the second conductive portions of the first element, The fourth conductive portion of the first element is located between one of the plurality of second conductive portions of the first element and another of the plurality of second conductive portions of the first element. The second element includes a plurality of the fourth conductive portions of the second element, The semiconductor device according to claim 18, wherein the second conductive portion of the second element is located between one of the plurality of fourth conductive portions of the second element and another of the plurality of fourth conductive portions of the second element.

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