Semiconductor light-emitting device

Abstract

To provide a semiconductor light emitting device capable of realizing a reduction in size and minimizing likelihood of a trouble due to intrusion of a solder.SOLUTION: Included are: a substrate 1 including a first principal surface 11 facing one side z1 in a thickness direction thereof; a first electrode 2 provided on the substrate 1; a semiconductor light emitting element 4; and a light-transmitting resin 6 that covers the semiconductor light emitting element 4. The first electrode 2 includes a first bonding portion 24, a first portion 21, a second portion 22, and a third portion. The first bonding portion 24 is formed on the first principal surface 11 and is bonded and electrically conducted to the semiconductor light emitting element 4. The first portion 21 and the second portion 22 are formed on the first principal surface 11 and is disposed on one side x1 in a first direction. The first portion 21 is connected to the first bonding portion 24. The second portion 22 is apart from the first bonding portion 24 and is apart from the first portion 21 in a second direction. The third portion is formed on a place different from the first principal surface 11. The first portion 21 and the second portion 22 are electrically conducted to each other through the third portion.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a semiconductor light-emitting device.

Background Art

[0002] Semiconductor light-emitting devices are widely used as light source devices for electronic devices and the like. Patent Document 1 discloses an example of a conventional semiconductor light-emitting device. The semiconductor light-emitting device disclosed in the document includes a substrate, a semiconductor light-emitting element, and a sealing resin. The substrate has a main surface, a first side surface and a second side surface, a bottom surface and a top surface. The main surface faces one side in the thickness direction of the substrate. The first side surface and the second side surface face opposite sides in a first direction orthogonal to the thickness direction of the substrate. The bottom surface and the top surface face opposite sides in a second direction orthogonal to both the thickness direction and the first direction. A first main surface electrode and a second main surface electrode are provided on the main surface of the substrate. The first main surface electrode is disposed on one side of the substrate in the first direction, and the second main surface electrode is disposed on the other side in the first direction. The semiconductor light-emitting element is mounted on the main surface (the first main surface electrode). The sealing resin covers the semiconductor light-emitting element and transmits light from the semiconductor light-emitting element.

[0003] The first main surface electrode and the second main surface electrode each include a portion formed in a series in a second direction on the main surface so as to be in contact with both the upper and lower edges. The semiconductor light-emitting device described in Patent Document 1 further comprises a first insulating film and a second insulating film. The first insulating film is formed across the first main surface electrode and the main surface and is covered with a sealing resin. The second insulating film is formed across the second main surface electrode and the main surface and is covered with a sealing resin. When mounting the semiconductor light-emitting device on a circuit board, solder used to mount the semiconductor light-emitting device on the circuit board may penetrate into the interior from between the first main surface electrode (second main surface electrode) and the sealing resin and travel along the first main surface electrode (second main surface electrode). This solder penetration may cause problems such as improper electrical conduction. In contrast, with the configuration comprising the first insulating film and the second insulating film described above, even if solder for mounting penetrates into the interior from between the first main surface electrode (second main surface electrode) and the sealing resin, the penetration of the solder is blocked by the first insulating film (second insulating film). As a result, solder is less likely to penetrate between the first main surface electrode (second main surface electrode) and the first insulating film (second insulating film), and problems such as improper electrical conduction can be suppressed. However, with the configuration in which the first insulating film (second insulating film) is formed on the first main surface electrode (second main surface electrode) and on the main surface, the formation regions of the first main surface electrode (second main surface electrode) and the first insulating film (second insulating film) are required in the thickness direction of the substrate. This is undesirable when aiming to miniaturize semiconductor light-emitting devices. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-161697 [Overview of the Initiative] [Problems that the invention aims to solve]

[0005] This disclosure was conceived under the circumstances described above, and its primary objective is to provide a semiconductor light-emitting device that is suitable for miniaturization while suppressing problems caused by solder intrusion. [Means for solving the problem]

[0006] The semiconductor light-emitting apparatus provided by this disclosure comprises a substrate having a first main surface facing one side in the thickness direction and a second main surface facing the other side in the thickness direction, a first electrode provided on the substrate, a semiconductor light-emitting element mounted on the first main surface, and a light-transmitting resin covering the semiconductor light-emitting element, wherein the first electrode includes a first bonding portion, a first portion, a second portion, and a third portion, the first bonding portion is formed on the first main surface and is electrically bonded to the semiconductor light-emitting element, and each of the first portion and the second portion is A third portion is formed on the first main surface and is located on one side of the substrate in a first direction perpendicular to the thickness direction. The first portion is connected to the first bonding portion on the first main surface, the second portion is separated from the first bonding portion on the first main surface and separated from the first portion in a second direction perpendicular to both the thickness direction and the first direction, the third portion is formed in a location different from the first main surface, and the first portion and the second portion are electrically connected to each other via the third portion. [Effects of the Invention]

[0007] The semiconductor light-emitting device of this disclosure suppresses problems caused by solder intrusion and enables miniaturization.

[0008] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a plan view showing a semiconductor light-emitting apparatus according to the first embodiment of this disclosure. [Figure 2]Figure 2 is a front view showing a semiconductor light-emitting apparatus according to the first embodiment of this disclosure. [Figure 3] Figure 3 is a left side view showing a semiconductor light-emitting apparatus according to the first embodiment of this disclosure. [Figure 4] Figure 4 is a bottom view showing a semiconductor light-emitting apparatus according to the first embodiment of this disclosure. [Figure 5] Figure 5 is a cross-sectional view along the VV line in Figure 1. [Figure 6] Figure 6 is a cross-sectional view along the line VI-VI in Figure 1. [Figure 7] Figure 7 is a cross-sectional view along the line VII-VII in Figure 1. [Figure 8] Figure 8 is a cross-sectional view along the line VIII-VIII in Figure 1. [Figure 9] Figure 9 is a cross-sectional view along the line IX-IX in Figure 1. [Figure 10] Figure 10 is a cross-sectional view along line XX in Figure 1. [Figure 11] Figure 11 is a left side view showing an example of the mounting state of a semiconductor light-emitting device according to the first embodiment of this disclosure. [Figure 12] Figure 12 is a plan view showing a semiconductor light-emitting apparatus according to a second embodiment of the present disclosure. [Figure 13] Figure 13 is a bottom view showing a semiconductor light-emitting apparatus according to a second embodiment of this disclosure. [Figure 14] Figure 14 is a left side view showing a semiconductor light-emitting apparatus according to a second embodiment of this disclosure. [Figure 15] Figure 15 is a left side view showing an example of the mounting state of a semiconductor light-emitting device according to the second embodiment of this disclosure. [Figure 16] Figure 16 is a plan view showing a semiconductor light-emitting apparatus according to the third embodiment of this disclosure. [Figure 17] Figure 17 is a front view showing a semiconductor light-emitting apparatus according to a third embodiment of this disclosure. [Figure 18] Figure 18 is a cross-sectional view along the line XVIII-XVIII in Figure 16. [Figure 19]FIG. 19 is a plan view showing a semiconductor light-emitting device according to the fourth embodiment of the present disclosure. [Figure 20] FIG. 20 is a cross-sectional view taken along line XX-XX of FIG. 19. [Figure 21] FIG. 21 is a cross-sectional view taken along line XXI-XXI of FIG. 19. [Figure 22] FIG. 22 is a cross-sectional view taken along line XXII-XXII of FIG. 19. [Figure 23] FIG. 23 is a cross-sectional view taken along line XXIII-XXIII of FIG. 19.

Embodiments for Carrying Out the Invention

[0010] Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

[0011] Terms such as "first", "second", "third", etc. in the present disclosure are merely used as labels and do not necessarily intend to assign an order to their objects.

[0012] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed in a certain direction" includes "object A overlapping all of object B" and "object A overlapping a part of object B". Also, in this disclosure, "a surface A facing direction B (one or the other side of it)" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is inclined with respect to direction B. Furthermore, unless otherwise specified, "object A is supported by object B" includes "object A is directly supported by object B" and "object A is supported by object B with another object interposed between them".

[0013] <First Embodiment> Figures 1 to 10 show a semiconductor light-emitting device according to the first embodiment of the present disclosure. The semiconductor light-emitting device A1 of this embodiment comprises a substrate 1, a first electrode 2, a second electrode 3, a semiconductor light-emitting element 4, a wire 5, a light-transmitting resin 6, and an insulating film 7.

[0014] Figure 1 is a plan view of semiconductor light-emitting device A1. Figure 2 is a front view of semiconductor light-emitting device A1. Figure 3 is a left side view of semiconductor light-emitting device A1. Figure 4 is a bottom view of semiconductor light-emitting device A1. Figure 5 is a cross-sectional view along line VV in Figure 1. Figure 6 is a cross-sectional view along line VI-VI in Figure 1. Figure 7 is a cross-sectional view along line VII-VII in Figure 1. Figure 8 is a cross-sectional view along line VIII-VIII in Figure 1. Figure 9 is a cross-sectional view along line IX-IX in Figure 1. Figure 10 is a cross-sectional view along line XX in Figure 1. Note that for ease of understanding, Figure 1 is shown with light passing through the translucent resin 6.

[0015] In the description of the semiconductor light-emitting device A1, the thickness direction (plan view direction) of the semiconductor light-emitting device A1 is an example of the "thickness direction" in this disclosure and is referred to as the "thickness direction z". The direction orthogonal to the thickness direction z is an example of the "first direction" in this disclosure and is referred to as the "first direction x". The direction orthogonal to both the thickness direction z and the first direction x is an example of the "second direction" in this disclosure and is referred to as the "second direction y". Furthermore, in Figure 1, the left side of the figure is an example of the "one side of the first direction" in this disclosure and is referred to as the "one side of the first direction x1", and the right side of the figure is an example of the "other side of the first direction" in this disclosure and is referred to as the "other side of the first direction x2". In Figure 1, the upper side of the figure is an example of the "one side of the second direction" in this disclosure and is referred to as the "one side of the second direction y1", and the lower side of the figure is an example of the "other side of the second direction" in this disclosure and is referred to as the "other side of the second direction y2". In Figure 2, the upper side of the figure is an example of "one side in the thickness direction" of this disclosure and is referred to as "one side in the thickness direction z1," and the lower side of the figure is an example of "the other side in the thickness direction" of this disclosure and is referred to as "the other side in the thickness direction z2." As shown in Figure 1, the semiconductor light-emitting device A1 is substantially rectangular in shape when viewed in the thickness direction z. The size of the semiconductor light-emitting device A1 is not limited in any way.

[0016] The substrate 1 is rectangular in shape and contains an insulating material such as glass epoxy resin. The size of the substrate 1 is not limited in any way; for example, the size in the first direction x is about 1.6 mm, the size in the second direction y is about 0.8 mm, and the size in the thickness direction z is about 0.6 mm.

[0017] The substrate 1 has a first main surface 11, a second main surface 12, and side surfaces 13 to 16. The first main surface 11 is a plane facing one side z1 in the thickness direction. The second main surface 12 is a plane facing the other side z2 in the thickness direction. Side surface 13 is located between the first main surface 11 and the second main surface 12 in the thickness direction z and faces one side x1 in the first direction. Side surface 14 is located between the first main surface 11 and the second main surface 12 in the thickness direction z and faces the other side x2 in the first direction. Side surface 15 is located between the first main surface 11 and the second main surface 12 in the thickness direction z and faces one side y1 in the second direction. Side surface 16 is located between the first main surface 11 and the second main surface 12 in the thickness direction z and faces the other side y2 in the second direction.

[0018] As shown in Figure 1, the first main surface 11 has an edge 110 and a first edge 111. Edge 110 is an edge located on one side y1 in the second direction of the first main surface 11 and is aligned with the first direction x. The first edge 111 is an edge located on the other side y2 in the second direction of the first main surface 11 and is aligned with the first direction x. In this embodiment, edge 110 also serves as the boundary between the first main surface 11 and the side surface 15. Also, the first edge 111 serves as the boundary between the first main surface 11 and the side surface 16.

[0019] As shown in Figure 4, the second main surface 12 has a second edge 122 and a third edge 123. The second edge 122 is an edge located on one side y1 in the second direction of the second main surface 12 and is aligned with the first direction x. The third edge 123 is an edge located on the other side y2 in the second direction of the second main surface 12 and is aligned with the first direction x. In this embodiment, the second edge 122 also serves as the boundary between the second main surface 12 and the side surface 15. The third edge 123 also serves as the boundary between the second main surface 12 and the side surface 16.

[0020] In this embodiment, the substrate 1 has grooves 171 to 174. Groove 171 is recessed from side surfaces 13 and 15. Groove 172 is recessed from side surfaces 13 and 16. Groove 173 is recessed from side surfaces 14 and 15. Groove 174 is recessed from side surfaces 14 and 16. Each of the grooves 171 to 174 reaches the first main surface 11 and the second main surface 12 in the thickness direction z. The cross-sectional shape of each of the grooves 171 to 174 perpendicular to the thickness direction z is a semicircular shape.

[0021] In this embodiment, the first electrode 2 and the second electrode 3 are arranged on a substrate 1. The first electrode 2 and the second electrode 3 include conductive materials such as metals or alloys thereof, such as Cu (copper), Ni (nickel), Fe (iron), Sn (tin), Ag (silver), and Au (gold). The method for forming the first electrode 2 and the second electrode 3 is not limited and can be, for example, by plating.

[0022] As shown in Figures 1 to 5 and Figures 7 to 9, the first electrode 2 of this embodiment includes a first part 21, a second part 22, a third part 23, a first bonding part 24, a first connecting part 25, and groove relay parts 261, 262.

[0023] As shown in Figures 1 and 5, the first part 21, the second part 22, the first bonding part 24, and the first connecting part 25 are each formed on the first main surface 11. In this embodiment, the first bonding part 24 is located on the first main surface 11 at the center of the first direction x and the center of the second direction y. The first bonding part 24 is circular in shape when viewed in the thickness direction z. The first bonding part 24 is the area where the semiconductor light-emitting element 4 is die-bonded.

[0024] Each of the first part 21 and the second part 22 is located on one side x1 in the first direction on the first main surface 11. The first part 21 is located on one side y1 in the second direction on the first main surface 11. As shown in Figures 1 and 9, the first part 21 is in contact with the edge 110. As shown in Figure 1, the first part 21 is connected to the first bonding part 24 on the first main surface 11. The second part 22 is located on the other side y2 in the second direction on the first main surface 11. The second part 22 is in contact with the first edge 111. The second part 22 is separated from the first bonding part 24 on the first main surface 11. Also, the second part 22 is separated from the first part 21 in the second direction y.

[0025] The first connecting portion 25 is located on the first main surface 11, closer to one side y1 in the second direction. The first connecting portion 25 is connected to both the first bonding portion 24 and the first portion 21 on the first main surface 11. As a result, the first portion 21 is connected to the first bonding portion 24 on the first main surface 11 via the first connecting portion 25.

[0026] As shown in Figure 1, in this embodiment, the length of the first part 21 in the second direction y (first dimension L1) and the length of the second part 22 in the second direction y (second dimension L2) are the same. Here, "the first dimension L1 and the second dimension L2 are the same" includes not only cases where the first dimension L1 and the second dimension L2 are identical, but also cases where they differ slightly due to manufacturing errors, etc.

[0027] The ratio of the length of the second part 22 in the second direction y (second dimension L2) to the length of the first main surface 11 in the second direction y (third dimension L3) is, for example, in the range of 0.1 to 0.8 times. In the example shown in Figure 1, the ratio of the second dimension L2 to the third dimension L3 is approximately 0.28 times.

[0028] The third part 23 is formed in a different location from the first main surface 11. As shown in Figures 3 to 5 and Figure 9, in this embodiment, the third part 23 is formed on the second main surface 12. The third part 23 is located on one side x1 in the first direction on the second main surface 12. The third part 23 extends along the second direction y and is in contact with both the second edge 122 and the third edge 123.

[0029] As shown in Figures 1, 4, 7, and 8, the groove connecting portion 261 is formed in the groove 171, and the groove connecting portion 262 is formed in the groove 172. The groove connecting portion 261 covers the entire groove 171. The groove connecting portion 261 is connected to both the first portion 21 and the third portion 23. The groove connecting portion 262 covers the entire groove 172. The groove connecting portion 262 is connected to both the second portion 22 and the third portion 23. With the above configuration, the first portion 21 and the second portion 22 are electrically connected to each other via the third portion 23 and the groove connecting portions 261 and 262. The groove connecting portions 261 and 262 are examples that constitute part of the third portion of this disclosure.

[0030] As shown in Figures 1, 2, 5, 7, 8, and 10, the second electrode 3 of this embodiment includes a fourth part 31, a fifth part 32, a sixth part 33, a second bonding part 34, a second connecting part 35, and groove relay parts 361, 362.

[0031] As shown in Figures 1 and 5, the fourth section 31, the fifth section 32, the second bonding section 34, and the second connecting section 35 are each formed on the first main surface 11. In this embodiment, the second bonding section 34 is located on the first main surface 11, closer to the other side x2 in the first direction and closer to the one side y1 in the second direction. The second bonding section 34 is separated from the first bonding section 24 by the other side x2 in the first direction and the one side y1 in the second direction. The second bonding section 34 is the part to which the wire 5 is bonded.

[0032] Each of the fourth part 31 and the fifth part 32 is located on the first main surface 11 on the other side x21 in the first direction. The fourth part 31 is located on the first main surface 11 on the one side y1 in the second direction. As shown in Figures 1 and 10, the fourth part 31 is in contact with the edge 110. As shown in Figure 1, the fourth part 31 is connected to the second bonding part 34 on the first main surface 11. The fifth part 32 is located on the first main surface 11 on the other side y2 in the second direction. The fifth part 32 is in contact with the first edge 111. The fifth part 32 is separated from the second bonding part 34 on the first main surface 11. Also, the fifth part 32 is separated from the fourth part 31 in the second direction y.

[0033] The second connecting portion 35 is located on the first main surface 11, closer to one side y1 in the second direction. The second connecting portion 35 is connected to both the second bonding portion 34 and the fourth portion 31 on the first main surface 11. As a result, the fourth portion 31 is connected to the second bonding portion 34 on the first main surface 11 via the second connecting portion 35.

[0034] As shown in Figure 1, in this embodiment, the length of the fourth part 31 in the second direction y (fourth dimension L4) and the length of the fifth part 32 in the second direction y (fourth dimension L4) are the same. Here, the statement that the fourth dimension L4 and the fifth dimension L5 are the same includes not only cases where the fourth dimension L4 and the fifth dimension L5 are identical, but also cases where they differ slightly due to manufacturing errors, etc.

[0035] The ratio of the length of the fifth part 32 in the second direction y (fifth dimension L5) to the length of the first main surface 11 in the second direction y (third dimension L3) is, for example, in the range of 0.1 to 0.8 times. In the example shown in Figure 1, the ratio of the fifth dimension L5 to the third dimension L3 is approximately 0.28 times.

[0036] The sixth portion 33 is formed in a different location from the first main surface 11. As shown in Figures 3 to 5 and Figure 10, in this embodiment, the sixth portion 33 is formed on the second main surface 12. The sixth portion 33 is located on the other side x2 in the first direction of the second main surface 12. The third portion 23 extends along the second direction y and is in contact with both the second edge 122 and the third edge 123.

[0037] As shown in Figures 1, 4, 7, and 8, the groove junction 361 is formed in the groove 173, and the groove junction 362 is formed in the groove 174. The groove junction 361 covers the entire groove 173. The groove junction 361 is connected to both the fourth section 31 and the sixth section 33. The groove junction 362 covers the entire groove 174. The groove junction 362 is connected to both the fifth section 32 and the sixth section 33. With the above configuration, the fourth section 31 and the fifth section 32 are electrically connected to each other via the sixth section 33 and the groove junctions 361 and 362. The groove junctions 361 and 362 are an example of parts of the sixth section of this disclosure.

[0038] The semiconductor light-emitting element 4 is the light source of the semiconductor light-emitting device A1. The specific configuration of the semiconductor light-emitting element 4 is not limited in any way and may be, for example, a light-emitting diode (LED) or a laser diode (LD). In this embodiment, the semiconductor light-emitting element 4 is, for example, a light-emitting diode (LED). The number of semiconductor light-emitting elements in the semiconductor light-emitting device of this disclosure is not limited in any way and may be two or more.

[0039] As shown in Figures 1, 5, and 6, the semiconductor light-emitting element 4 has electrodes 41 and 42. Electrode 41 is located on one side z1 in the thickness direction. Electrode 42 is located on the other side z2 in the thickness direction. Electrode 42 is electrically bonded to the first bonding portion 24 by a bonding material 49. The bonding material 49 is a conductive bonding material such as solder or Ag paste. The semiconductor light-emitting element 4 mounted on the first bonding portion 24 is located in the center of the substrate 1 (the center of both the first direction x and the second direction y) when viewed in the thickness direction z.

[0040] Wire 5 is connected to the electrode 41 of the semiconductor light-emitting element 4 and the second bonding portion 34. Wire 5 is made of a metal such as Au (gold). The electrode 41 of the semiconductor light-emitting element 4 is electrically bonded to the second bonding portion 34 by this wire 5.

[0041] The translucent resin 6 covers the semiconductor light-emitting element 4 and the wire 5, as well as parts of the first main surface 11, the first electrode 2, and the second electrode 3. More specifically, the translucent resin 6 covers the first bonding portion 24 and the first connecting portion 25, and parts of the first portion 21 and the second portion 22 of the first electrode 2. The translucent resin 6 also covers the second bonding portion 34 and the second connecting portion 35, and parts of the fourth portion 31 and the fifth portion 32 of the second electrode 3. The translucent resin 6 is made of a material that transmits light from the semiconductor light-emitting element 4, and is made of, for example, a transparent or translucent epoxy resin. The specific configuration of the translucent resin 6 is not limited in any way, and in this embodiment, as shown in Figures 2, 3, 5 to 8, and 10, the translucent resin 6 has a top surface 61, two side surfaces 62, and two inclined surfaces 63.

[0042] The top surface 61 is located on one side z1 in the thickness direction and is a plane aligned with the first direction x and the second direction y. The two sides 62 are provided on one side y1 and the other side y2 in the second direction, respectively, and are planes aligned with the thickness direction z and the first direction x. The side 62 on one side y1 in the second direction is flush (or nearly flush) with the side 15 of the substrate 1. The side 62 on the other side y2 in the second direction is flush (or nearly flush) with the side 16 of the substrate 1. The two inclined surfaces 63 are provided on one side x1 and the other side x2 in the first direction, respectively. The inclined surfaces 63 are inclined with respect to the thickness direction z.

[0043] As described above, the translucent resin 6 covers parts of the first part 21 and the second part 22, as well as the fourth part 31 and the sixth part 33. The parts of the first part 21, the second part 22, the fourth part 31, and the fifth part 32 covered by the translucent resin 6 are interposed between the translucent resin 6 and the first main surface 11. The first part 21 and the second part 22 have portions that extend from the translucent resin 6 in one direction x1. Of the first main surface 11, the region sandwiched between the portions of the first part 21 and the second part 22 that extend from the translucent resin 6 in one direction x1, as viewed in the thickness direction z, may be thinly covered by the translucent resin 6. Also, of the first main surface 11, the region sandwiched between the portions of the fourth part 31 and the fifth part 32 that extend from the translucent resin 6 in the other direction x2, as viewed in the thickness direction z, may be thinly covered by the translucent resin 6. This is because, in the manufacturing process of the semiconductor light-emitting device A1, when forming the translucent resin 6, the flat portion of the mold used for formation is pressed against a part of the first part 21, the second part 22, the fourth part 31, and the fifth part 32, respectively, and the resin material flows into the gaps surrounded by the mold, the first part 21 and the second part 22 and the first main surface 11, as well as the gaps surrounded by the mold, the fourth part 31 and the fifth part 32 and the first main surface 11.

[0044] As shown in Figures 2 and 4-6, the insulating film 7 is arranged on the second main surface 12 of the substrate 1. The specific configuration of the insulating film 7 is not limited in any way and may be composed of, for example, a resist layer. The insulating film 7 functions as a marker for determining the connection direction of the semiconductor light-emitting device A1. On the second main surface 12, the insulating film 7 is located near the center in the second direction y and between the third portion 23 and the sixth portion 33 in the first direction x. When viewed in the thickness direction z, the insulating film 7 has a convex shape with the side of the sixth portion 33 protruding in the first direction x. An insulating film 7 with such a shape functions as a marker for determining the connection direction of the semiconductor light-emitting device A1.

[0045] Figure 11 is a left side view showing an example of a semiconductor light-emitting device A1 mounted on a mounting substrate. The semiconductor light-emitting device A1 is mounted on the mounting substrate 90 (represented by dashed lines) with its side surface 16 (facing the other side y2 in the second direction) facing the mounting substrate 90. The semiconductor light-emitting device A1 is used as a side-view type light source that emits light in a direction parallel to the surface of the mounting substrate 90 (to the right in Figure 11). For example, a wiring pattern (not shown) is formed on the surface of the mounting substrate 90. The semiconductor light-emitting device A1 is mounted on the mounting substrate 90 via joints such as solder. The groove relay section 262, the second section 22, the third section 23, the groove relay section 362 (not shown), the fifth section 32 (not shown), and the sixth section 33 (not shown) are each joined to the mounting substrate 90 by joints. In Figure 11, joints Sd1 and Sd2 are represented by dashed lines. Joint Sd1 connects the second part 22 to the mounting substrate 90. Joint Sd2 connects the third part 23 to the mounting substrate 90.

[0046] Next, the operation of the semiconductor light-emitting device A1 of this embodiment will be described.

[0047] The semiconductor light-emitting device A1 comprises a first electrode 2 provided on a substrate 1 and a semiconductor light-emitting element 4 mounted on a first main surface 11 of the substrate 1. The first electrode 2 includes a first bonding portion 24, a first portion 21, a second portion 22, and a third portion 23. The first bonding portion 24 is formed on the first main surface 11 and is electrically bonded to the semiconductor light-emitting element 4 (electrode 42) via a bonding material 49. The first portion 21 and the second portion 22 are formed on the first main surface 11 and are arranged on one side x1 in a first direction on the substrate 1. The first portion 21 is connected to the first bonding portion 24 on the first main surface 11. On the other hand, the second portion 22 is separated from the first bonding portion 24 on the first main surface 11 and is also separated from the first portion 21 in a second direction y. The third part 23 is formed in a different location from the first main surface 11 (in this embodiment, the second main surface 12), and the first part 21 and the second part 22 are electrically connected to each other via the third part 23 and the groove relay parts 261 and 262.

[0048] When the semiconductor light-emitting device A1 is mounted on the mounting substrate 90, solder used for mounting may penetrate between the second part 22 and the light-transmitting resin 6. With the above configuration of the semiconductor light-emitting device A1, since the second part 22 is separated from the first bonding part 24 and the first part 21 connected thereto, even if solder that has penetrated into the semiconductor light-emitting device A1 travels along the second part 22, it is prevented from reaching the first part 21 or the first bonding part 24. Therefore, with the configuration in which the first electrode 2 has the first part 21, the second part 22, the third part 23 and the first bonding part 24, it is possible to prevent problems such as improper electrical conduction due to solder penetration. Furthermore, in the semiconductor light-emitting device A1, unlike, for example, this embodiment, it is not necessary to form an insulating film on the first main surface 11 compared to cases where an insulating film is interposed between the electrode and the light-transmitting resin. This is preferable for miniaturizing the semiconductor light-emitting device A1.

[0049] The semiconductor light-emitting device A1 further comprises a second electrode 3 provided on a substrate 1. The second electrode 3 includes a second bonding portion 34, a fourth portion 31, a fifth portion 32, and a sixth portion 33. The second bonding portion 34 is formed on the first main surface 11 and is electrically bonded to the semiconductor light-emitting element 4 (electrode 41) via a wire 5. The fourth portion 31 and the fifth portion 32 are formed on the first main surface 11 and are located on the other side x2 in the first direction on the substrate 1. The fourth portion 31 is connected to the second bonding portion 34 on the first main surface 11. On the other hand, the fifth portion 32 is separated from the second bonding portion 34 on the first main surface 11 and is also separated from the fourth portion 31 in the second direction y. The sixth section 33 is formed in a different location from the first main surface 11 (in this embodiment, the second main surface 12), and the fourth section 31 and the fifth section 32 are electrically connected to each other via the sixth section 33 and the groove relay sections 361 and 362.

[0050] When the semiconductor light-emitting device A1 is mounted on the mounting substrate 90, solder used for mounting may penetrate between the fifth part 32 and the light-transmitting resin 6. With this configuration, when the semiconductor light-emitting device A1 is mounted on the mounting substrate 90, the fifth part 32 is separated from the second bonding part 34 and the fourth part 31 connected thereto. Therefore, even if solder that has penetrated into the semiconductor light-emitting device A1 travels along the fifth part 32, it is prevented from reaching the fourth part 31 or the second bonding part 34. Accordingly, with a configuration in which the second electrode 3 has the fourth part 31, fifth part 32, sixth part 33 and second bonding part 34, it is possible to prevent problems such as improper electrical conduction due to solder penetration. Furthermore, in the semiconductor light-emitting device A1, unlike, for example, this embodiment, it is not necessary to form an insulating film on the first main surface 11 compared to cases where an insulating film is interposed between the electrode and the light-transmitting resin. This is preferable for miniaturizing the semiconductor light-emitting device A1.

[0051] The first part 21 of the first electrode 2 is located on one side y1 of the second direction on the first main surface 11, and the second part 22 is located on the other side y2 of the second direction on the first main surface 11. The fourth part 31 of the second electrode 3 is located on one side y1 of the second direction on the first main surface 11, and the fifth part 32 is located on the other side y2 of the second direction on the first main surface 11. With this configuration, it is possible to properly prevent improper solder from entering the inside of the semiconductor light-emitting device A1.

[0052] The second portion 22 of the first electrode 2 is in contact with the first edge 111 of the first main surface 11 on the other side x2 in the first direction. The third portion 23 is formed on the second main surface 12 and is in contact with both the second edge 122 on one side y1 in the second direction and the third edge 123 on the other side y2 in the second direction of the second main surface 12. The second dimension L2, which is the length of the second portion 22 in the second direction y, is the same as the first dimension L1, which is the length of the first portion 21 in the second direction y. The ratio of the length of the second portion 22 in the second direction y (second dimension L2) to the length of the first main surface 11 in the second direction y (third dimension L3) is in the range of 0.1 to 0.8 times. The second portion 22 and the third portion 23 are each joined to the mounting substrate 90 by solder. The solder joined to the second portion 22 is formed in a range corresponding to the second dimension L2 in the second direction y of the second portion 22. The solder bonded to the third part 23 is formed over a sufficiently wide area in the second direction y of the third part 23 (see Figure 11). With this configuration, the mounting strength of the semiconductor light-emitting device A1 can be increased.

[0053] The fifth portion 32 of the second electrode 3 is in contact with the first edge 111 on the other side x2 in the first direction of the first main surface 11. The sixth portion 33 is formed on the second main surface 12 and is in contact with both the second edge 122 on one side y1 in the second direction and the third edge 123 on the other side y2 in the second direction of the second main surface 12. The fifth dimension L5, which is the length of the fifth portion 32 in the second direction y, is the same as the fourth dimension L4, which is the length of the fourth portion 31 in the second direction y. The ratio of the length of the fifth portion 32 in the second direction y (fifth dimension L5) to the length of the first main surface 11 in the second direction y (third dimension L3) is in the range of 0.1 to 0.8 times. The fifth portion 32 and the sixth portion 33 are each joined to the mounting substrate 90 by solder. The solder joined to the second portion 22 is formed in the range corresponding to the fifth dimension L5 in the second direction y of the fifth portion 32. The solder bonded to part 6 33 is formed over a sufficiently wide area in the second direction y of part 6 33. With this configuration, the mounting strength of the semiconductor light-emitting device A1 can be increased.

[0054] <Second Embodiment> Figures 12 to 14 show a semiconductor light-emitting apparatus according to the second embodiment of this disclosure. Figure 12 is a plan view of the semiconductor light-emitting apparatus A2 of this embodiment. Figure 13 is a bottom view of the semiconductor light-emitting apparatus A2. Figure 14 is a left side view of the semiconductor light-emitting apparatus A2. In the drawings from Figure 12 onward, elements that are the same as or similar to those in the semiconductor light-emitting apparatus A1 of the above embodiment are denoted by the same reference numerals as in the above embodiment, and their descriptions are omitted as appropriate. Furthermore, the configurations of each part in each embodiment can be appropriately combined with each other to the extent that no technical inconsistencies arise.

[0055] In the semiconductor light-emitting device A2 of this embodiment, the configuration of the second part 22 of the first electrode 2 and the fifth part 32 of the second electrode 3 differs mainly from that of the above embodiment. In addition, the semiconductor light-emitting device A2 is provided with an additional first insulating film 71 and a second insulating film 72.

[0056] In this embodiment, the length of the second part 22 in the second direction y (second dimension L2) is larger than in the above embodiment. Furthermore, the length of the second part 22 in the second direction y (second dimension L2) is larger than the length of the first part 21 in the second direction y (first dimension L1). In the example shown in Figure 12, the ratio of the length of the second part 22 in the second direction y (second dimension L2) to the length of the first main surface 11 in the second direction y (third dimension L3) is approximately 0.59 times.

[0057] In semiconductor light-emitting device A2, the length of the fifth part 32 in the second direction y (fifth dimension L5) is larger than in the above embodiment. The length of the fifth part 32 in the second direction y (fifth dimension L5) is larger than the length of the fourth part 31 in the second direction y (fourth dimension L4). In the example shown in Figure 12, the ratio of the length of the fifth part 32 in the second direction y (fifth dimension L5) to the length of the first main surface 11 in the second direction y (third dimension L3) is approximately 0.59 times.

[0058] As shown in Figures 13 and 14, the first insulating film 71 and the second insulating film 72 are arranged on the second main surface 12. The specific configurations of the first insulating film 71 and the second insulating film 72 are not limited in any way and may be composed of, for example, a resist layer.

[0059] The first insulating film 71 is laminated on the third part 23 and, in the illustrated example, is a strip extending in the first direction x when viewed in the thickness direction z. The first insulating film 71 is formed spanning across the third part 23 and the second main surface 12. When viewed in the thickness direction z, the first insulating film 71 divides the third part 23 into one side y1 in the second direction and the other side y2 in the second direction. On the second main surface 12, the first insulating film 71 is positioned closer to the one side y1 in the second direction. Of the third part 23 divided by the first insulating film 71, the length in the second direction of the portion located on the other side y2 in the second direction is approximately the same as the length of the second part 22 in the second direction y (second dimension L2).

[0060] The second insulating film 72 is located on the second main surface 12. The second insulating film 72 is laminated on the sixth portion 33 and, in the illustrated example, is a strip extending in the first direction x when viewed in the thickness direction z. The second insulating film 72 is formed spanning both the sixth portion 33 and the second main surface 12. When viewed in the thickness direction z, the second insulating film 72 divides the sixth portion 33 into one side y1 in the second direction and the other side y2 in the second direction. On the second main surface 12, the second insulating film 72 is located closer to the one side y1 in the second direction. Of the sixth portion 33 divided by the second insulating film 72, the length in the second direction of the portion located on the other side y2 in the second direction is approximately the same as the length of the fifth portion 32 in the second direction y (fifth dimension L5).

[0061] Figure 15 is a left side view showing an example of a semiconductor light-emitting device A2 mounted on a mounting substrate. The semiconductor light-emitting device A2 is mounted on the mounting substrate 90 (represented by dashed lines) with its side surface 16 (facing the other side y2 in the second direction) facing the mounting substrate 90.

[0062] According to this embodiment, when the semiconductor light-emitting device A2 is mounted on the mounting substrate 90, the second part 22 is separated from the first bonding part 24 and the first part 21 connected thereto. Therefore, even if solder that has entered the interior of the semiconductor light-emitting device A2 travels along the second part 22, it is prevented from reaching the first part 21 or the first bonding part 24. Thus, with a configuration in which the first electrode 2 has a first part 21, a second part 22, a third part 23, and a first bonding part 24, it is possible to prevent problems such as improper electrical conduction due to solder intrusion. Furthermore, in the semiconductor light-emitting device A2, unlike in this embodiment, for example, the formation of an insulating film on the first main surface 11 is unnecessary compared to cases where an insulating film is interposed between the electrode and the light-transmitting resin. This is preferable for miniaturizing the semiconductor light-emitting device A2.

[0063] When the semiconductor light-emitting device A2 is mounted on the mounting substrate 90, the fifth part 32 is separated from the second bonding part 34 and the fourth part 31 connected thereto. Therefore, even if solder that has entered the interior of the semiconductor light-emitting device A2 travels along the fifth part 32, it is prevented from reaching the fourth part 31 or the second bonding part 34. Thus, with the configuration in which the second electrode 3 has the fourth part 31, the fifth part 32, the sixth part 33, and the second bonding part 34, it is possible to prevent problems such as improper electrical conduction due to solder intrusion. Furthermore, in the semiconductor light-emitting device A2, unlike in this embodiment, for example, the formation of an insulating film on the first main surface 11 is unnecessary compared to cases where an insulating film is interposed between the electrode and the light-transmitting resin. This is preferable for miniaturizing the semiconductor light-emitting device A2.

[0064] The length of the second part 22 in the second direction y (second dimension L2) is greater than the length of the first part 21 in the second direction y (first dimension L1). The second part 22 and the third part 23 are each joined to the mounting substrate 90 by solder. The solder joined to the second part 22 is formed in the range corresponding to the second dimension L2 in the second direction y of the second part 22. The solder joined to the third part 23 is formed on the other side y2 of the second direction, which is partitioned by the first insulating film 71 of the third part 23 (see Figure 15). With this configuration, variations in the size of the solder joined to the second part 22 and the solder joined to the third part 23 can be suppressed. This makes it possible to increase the mounting strength of the semiconductor light-emitting device A2 and mount it more stably.

[0065] The length of the fifth part 32 in the second direction y (fifth dimension L5) is greater than the length of the fourth part 31 in the second direction y (fourth dimension L4). The fifth part 32 and the sixth part 33 are each joined to the mounting substrate 90 by solder. The solder joined to the fifth part 32 is formed in the range corresponding to the fifth dimension L5 in the second direction y of the fifth part 32. The solder joined to the sixth part 33 is formed on the other side y2 of the second direction, which is partitioned by the second insulating film 72 within the sixth part 33. With this configuration, variations in the size of the solder joined to the fifth part 32 and the solder joined to the sixth part 33 can be suppressed. This increases the mounting strength of the semiconductor light-emitting device A2 and makes it possible to mount it more stably. In addition, within the range of the same configuration as the semiconductor light-emitting device A1 of the above embodiment, the same effects and advantages as in the above embodiment are achieved.

[0066] <Third Embodiment> Figures 16 to 18 show a semiconductor light-emitting apparatus according to a third embodiment of the present disclosure. Figure 16 is a plan view of semiconductor light-emitting apparatus A3 of this embodiment. Figure 17 is a front view of semiconductor light-emitting apparatus A3. Figure 18 is a cross-sectional view taken along the line XVIII-XVIII in Figure 16.

[0067] In the semiconductor light-emitting device A3 of this embodiment, the configuration of the second part 22 of the first electrode 2 and the fifth part 32 of the second electrode 3 differs from the above embodiment mainly. In this embodiment, the length of the second part 22 and the fifth part 32 in the first direction x is smaller than in the above embodiment. The edge of the second part 22 on the other side x2 in the first direction is located closer to the one side x1 in the first direction compared to the above embodiment. The edge of the fifth part 32 on the one side x1 in the first direction is located closer to the other side x2 in the first direction compared to the above embodiment. As a result, the second part 22 and the fifth part 32 are exposed from the light-transmitting resin 6.

[0068] With this configuration, when the semiconductor light-emitting device A3 is mounted on a mounting substrate, solder bonded to the second part 22 (fifth part 32) is prevented from entering the interior of the semiconductor light-emitting device A3 via the second part 22 (fifth part 32). This prevents problems caused by solder intrusion. Furthermore, in the semiconductor light-emitting device A3, unlike in this embodiment, for example, the formation of an insulating film on the first main surface 11 is unnecessary compared to cases where an insulating film is interposed between the electrode and the light-transmitting resin. This is advantageous for miniaturizing the semiconductor light-emitting device A3. In addition, within the scope of the same configuration as the semiconductor light-emitting device A1 of the above embodiment, the same effects and advantages as in the above embodiment are achieved.

[0069] <Fourth Embodiment> Figures 19 to 23 show a semiconductor light-emitting apparatus according to the fourth embodiment of this disclosure. Figure 19 is a plan view of semiconductor light-emitting apparatus A4 of this embodiment. Figure 20 is a cross-sectional view along the line XX-XX in Figure 19. Figure 21 is a cross-sectional view along the line XXI-XXI in Figure 19. Figure 22 is a cross-sectional view along the line XXII-XXII in Figure 19. Figure 23 is a cross-sectional view along the line XXIII-XXIII in Figure 19.

[0070] In the semiconductor light-emitting device A4 of this embodiment, the configuration of the substrate 1, the first electrode 2, and the second electrode 3 differs mainly from the above embodiment. In this embodiment, grooves 171 to 174 are not provided at the four corners of the substrate 1. Instead, the substrate 1 has through holes 181 to 184. Each of the through holes 181 to 184 penetrates the substrate 1 in the thickness direction z. Through hole 181 overlaps the first part 21 and the third part 23 when viewed in the thickness direction z. Through hole 182 overlaps the second part 22 and the third part 23 when viewed in the thickness direction z. Through hole 183 overlaps the fourth part 31 and the sixth part 33 when viewed in the thickness direction z. Through hole 184 overlaps the fifth part 32 and the sixth part 33 when viewed in the thickness direction z.

[0071] In this embodiment, the first electrode 2 does not have groove relay portions 261, 262, but instead has through-conductive portions 271, 272. The through-conductive portion 271 fills the through-hole 181. The through-conductive portion 271 is connected to both the first portion 21 and the third portion 23. The through-conductive portion 271 overlaps the first main surface 11 when viewed in the thickness direction z, and is located between the first main surface 11 and the second main surface 12 in the thickness direction z. The through-conductive portion 272 fills the through-hole 182. The through-conductive portion 272 is connected to both the second portion 22 and the third portion 23. The through-conductive portion 272 overlaps the first main surface 11 when viewed in the thickness direction z, and is located between the first main surface 11 and the second main surface 12 in the thickness direction z. With the above configuration, the first part 21 and the second part 22 are electrically connected to each other via the third part 23 and the through-conductive portions 271 and 272. The through-conductive portions 271 and 272 are examples of parts that constitute the third part of this disclosure.

[0072] In this embodiment, the second electrode 3 does not have groove relay portions 361, 362, but instead has through-conductive portions 371, 372. The through-conductive portion 371 fills the through-hole 183. The through-conductive portion 371 is connected to both the fourth portion 31 and the sixth portion 33. The through-conductive portion 371 overlaps the first main surface 11 when viewed in the thickness direction z, and is located between the first main surface 11 and the second main surface 12 in the thickness direction z. The through-conductive portion 372 fills the through-hole 184. The through-conductive portion 372 is connected to both the fifth portion 32 and the sixth portion 33. The through-conductive portion 372 overlaps the first main surface 11 when viewed in the thickness direction z, and is located between the first main surface 11 and the second main surface 12 in the thickness direction z. With the above configuration, the fourth part 31 and the fifth part 32 are electrically connected to each other via the sixth part 33 and the through-conductors 371 and 372. The through-conductors 371 and 372 are examples of parts that constitute the sixth part of this disclosure.

[0073] According to this embodiment, when the semiconductor light-emitting device A4 is mounted on a mounting substrate, the second part 22 is separated from the first bonding part 24 and the first part 21 connected thereto. Therefore, even if solder that has entered the interior of the semiconductor light-emitting device A4 travels along the second part 22, it is prevented from reaching the first part 21 or the first bonding part 24. Thus, with a configuration in which the first electrode 2 has the first part 21, the second part 22, the third part 23, and the first bonding part 24, it is possible to prevent problems such as improper electrical conduction due to solder intrusion. Furthermore, in the semiconductor light-emitting device A4, unlike in this embodiment, for example, the formation of an insulating film on the first main surface 11 is unnecessary compared to cases where an insulating film is interposed between the electrode and the light-transmitting resin. This is preferable for miniaturizing the semiconductor light-emitting device A4.

[0074] When the semiconductor light-emitting device A4 is mounted on a mounting substrate, the fifth part 32 is separated from the second bonding part 34 and the fourth part 31 connected thereto. Therefore, even if solder that has entered the interior of the semiconductor light-emitting device A4 travels along the fifth part 32, it is prevented from reaching the fourth part 31 or the second bonding part 34. Thus, with a configuration in which the second electrode 3 has the fourth part 31, the fifth part 32, the sixth part 33, and the second bonding part 34, it is possible to prevent problems such as improper electrical conduction due to solder intrusion. Furthermore, in the semiconductor light-emitting device A4, unlike, for example, this embodiment, it is not necessary to form an insulating film on the first main surface 11, compared to cases where an insulating film is interposed between the electrode and the light-transmitting resin. This is advantageous for miniaturizing the semiconductor light-emitting device A4. In addition, within the scope of a configuration similar to that of the semiconductor light-emitting device A1 of the above embodiment, the same effects and advantages as in the above embodiment are achieved.

[0075] The semiconductor light-emitting device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor light-emitting device relating to this disclosure can be modified in various ways.

[0076] This disclosure includes the following annotations:

[0077] [Note 1] A substrate having a first main surface facing one side in the thickness direction and a second main surface facing the other side in the thickness direction, The first electrode provided on the substrate, A semiconductor light-emitting element mounted on the first main surface, The semiconductor light-emitting element is covered with a light-transmitting resin, The first electrode includes a first bonding portion, a first portion, a second portion, and a third portion. The first bonding portion is formed on the first main surface and is electrically bonded to the semiconductor light-emitting element. Each of the first and second parts is formed on the first main surface and is arranged on one side of the substrate in a first direction perpendicular to the thickness direction. The first part is connected to the first bonding portion on the first main surface, The second part is separated from the first bonding part on the first main surface and separated from the first part in a second direction perpendicular to both the thickness direction and the first direction. The third part is formed in a location different from the first main surface, A semiconductor light-emitting device in which the first part and the second part are electrically connected to each other via the third part. [Note 2] The first part is located on one side of the second direction in the first main surface, The second part is a semiconductor light-emitting apparatus as described in Appendix 1, located on the other side of the first main surface in the second direction. [Note 3] The first electrode includes a first connecting portion connected to both the first bonding portion and the first portion. The semiconductor light-emitting apparatus as described in Appendix 2, wherein the first connecting portion is located on the first main surface, closer to one side in the second direction. [Note 4] The first main surface has a first end edge located on the other side in the second direction, The second part is a semiconductor light-emitting device as described in Appendix 2 or 3, in contact with the first edge. [Note 5] The semiconductor light-emitting apparatus as described in Appendix 4, wherein the second dimension, which is the length of the second part in the second direction, is the same as or greater than the first dimension, which is the length of the first part in the second direction. [Note 6] The semiconductor light-emitting apparatus according to Appendix 4 or 5, wherein the ratio of the length of the second part in the second direction to the length of the first main surface in the second direction is in the range of 0.1 to 0.8 times. [Note 7] The third part is formed on the second main surface and is a semiconductor light-emitting apparatus according to any one of appendices 1 to 6. [Note 8] The second main surface has a second end edge located on one side in the second direction and a third end edge located on the other side in the second direction. The third part is in contact with both the second and third edges of the semiconductor light-emitting apparatus as described in Appendix 7. [Note 9] The third part further comprises a first insulating film laminated thereon, The semiconductor light-emitting apparatus according to appendix 7 or 8, wherein the first insulating film divides the third portion into one side and the other side in the second direction when viewed in the thickness direction. [Note 10] The third part is a semiconductor light-emitting apparatus according to any one of appendices 1 to 6, wherein the third part overlaps the first main surface when viewed in the thickness direction and is located between the first main surface and the second main surface in the thickness direction. [Note 11] The second part is a semiconductor light-emitting device according to any one of the appendices 1 to 10, which is exposed from the light-transmitting resin. [Note 12] The substrate further comprises a second electrode provided on the substrate, The second electrode includes a second bonding portion, a fourth portion, a fifth portion, and a sixth portion. The second bonding portion is formed on the first main surface and is electrically bonded to the semiconductor light-emitting element. Each of the fourth and fifth parts is formed on the first main surface and is positioned on the other side in the first direction on the substrate. The fourth part is connected to the second bonding portion on the first main surface, The fifth part is separated from the second bonding part on the first main surface and separated from the fourth part in the second direction. The sixth part is formed in a location different from the first main surface, The semiconductor light-emitting apparatus according to any one of the appendices 1 to 11, wherein the fourth part and the fifth part are electrically connected to each other via the sixth part. [Note 13] The fourth part is located on one side of the second direction in the first main surface, The fifth part is a semiconductor light-emitting apparatus as described in Appendix 12, located on the other side of the second direction in the first main surface. [Note 14] The first main surface has a first end edge located on the other side in the second direction, The fifth part is a semiconductor light-emitting device as described in Appendix 13, which is in contact with the first edge. [Note 15] The semiconductor light-emitting apparatus as described in Appendix 14, wherein the fifth dimension, which is the length of the fifth part in the second direction, is the same as or greater than the fourth dimension, which is the length of the fourth part in the second direction. [Note 16] The semiconductor light-emitting apparatus according to Appendix 14 or 15, wherein the ratio of the length of the fifth part in the second direction to the length of the first main surface in the second direction is in the range of 0.1 to 0.8 times. [Note 17] The sixth part is formed on the second main surface and is a semiconductor light-emitting apparatus according to any one of appendices 12 to 16. [Note 18] The second main surface has a second end edge located on one side in the second direction and a third end edge located on the other side in the second direction. The sixth part is in contact with both the second and third edges, and is the semiconductor light-emitting apparatus as described in Appendix 17. [Note 19] The sixth portion further comprises a second insulating film laminated thereon, The semiconductor light-emitting apparatus according to appendix 17 or 18, wherein the second insulating film divides the sixth portion into one side and the other side in the second direction when viewed in the thickness direction. [Note 20] The sixth part is a semiconductor light-emitting apparatus according to any one of appendices 12 to 16, wherein the sixth part overlaps the first main surface when viewed in the thickness direction and is located between the first main surface and the second main surface in the thickness direction. [Note 21] The fifth part is a semiconductor light-emitting device as described in any of appendices 12 to 20, which is exposed from the light-transmitting resin. [Note 22] The semiconductor light-emitting element is disposed on the first bonding portion, and the semiconductor light-emitting device is as described in any one of appendices 1 to 21. [Explanation of Symbols]

[0078] A1, A2, A3, A4: Semiconductor light-emitting devices 1: Circuit board 11: First main surface 110: Edge 111: First edge 12: Second main surface 122: Second edge 123: Third edge 13,14,15,16: Side view 171, 172, 173, 174: Recessed groove 181, 182, 183, 184: Through holes 2 :1st electrode 21: Part 1 22: Part 2 23: Part 3 24: First Bonding Section 25: First Liaison Department 261,262: Groove relay section 271,272: Through-hole conductive part 3 :Second electrode 31: Part 4 32: Part 5 33: Part 6 34: Second Bonding Section 35: Second Liaison Department 361,362: Groove relay section 371,372: Through-hole conductive part 4: Semiconductor light-emitting element 41,42: Electrode 49: Bonding material 5: Wire 6: Translucent resin 61: Top surface 62: Side view 63: Slope 7: Insulating film 71: First insulating film 72: Second insulating film 90: Mounted circuit board Sd1, Sd2: Joint L1: First dimension L2: Second dimension L3: Third dimension L4: Fourth dimension L5: Fifth dimension x :1st direction x1: One side in the first direction x2: First direction, other side y: Second direction y1: One side in the second direction y2: Second direction, other side z: thickness direction z1: One side in the thickness direction z2: Other side in the thickness direction

Claims

1. A substrate having a first main surface facing one side in the thickness direction and a second main surface facing the other side in the thickness direction, The first electrode provided on the substrate, A semiconductor light-emitting element mounted on the first main surface, The semiconductor light-emitting element is covered with a light-transmitting resin, The first electrode includes a first bonding portion, a first portion, a second portion, and a third portion. The first bonding portion is formed on the first main surface and is electrically bonded to the semiconductor light-emitting element. Each of the first and second parts is formed on the first main surface and is arranged on one side of the substrate in a first direction perpendicular to the thickness direction. The first part is connected to the first bonding portion on the first main surface, The second part is separated from the first bonding portion on the first main surface and separated from the first part in a second direction perpendicular to both the thickness direction and the first direction. The third part is formed in a location different from the first main surface, The first part and the second part are electrically connected to each other via the third part. The substrate has a first surface facing one side in the second direction and a second surface facing the other side in the second direction. The first part is located on one side of the second direction in the first main surface, The second part is located on the other side of the second direction in the first main surface, A semiconductor light-emitting device in which the second side is mounted facing the substrate.

2. The first electrode includes a first connecting portion connected to both the first bonding portion and the first portion. The semiconductor light-emitting apparatus according to claim 1, wherein the first contact portion is located on the first main surface, closer to one side in the second direction.

3. The first main surface has a first end edge located on the other side in the second direction, The semiconductor light-emitting apparatus according to claim 1 or 2, wherein the second part is in contact with the first edge.

4. The semiconductor light-emitting apparatus according to claim 3, wherein the second dimension, which is the length of the second part in the second direction, is the same as or greater than the first dimension, which is the length of the first part in the second direction.

5. The semiconductor light-emitting apparatus according to claim 3 or 4, wherein the ratio of the length of the second part in the second direction to the length of the first main surface in the second direction is in the range of 0.1 to 0.8 times.

6. The third part is formed on the second main surface, and the semiconductor light-emitting apparatus is as described in any one of claims 1 to 5.

7. The second main surface has a second edge located on one side of the second direction and a third edge located on the other side of the second direction. The semiconductor light-emitting apparatus according to claim 6, wherein the third part is in contact with both the second edge and the third edge.

8. The third part further comprises a first insulating film laminated thereon, The semiconductor light-emitting apparatus according to claim 6 or 7, wherein the first insulating film divides the third portion into one side and the other side in the second direction when viewed in the thickness direction.

9. The semiconductor light-emitting apparatus according to any one of claims 1 to 5, wherein the third part overlaps the first main surface when viewed in the thickness direction and is located between the first main surface and the second main surface in the thickness direction.

10. The second part is exposed from the light-transmitting resin, and is a semiconductor light-emitting apparatus according to any one of claims 1 to 9.

11. The substrate further comprises a second electrode provided on the substrate, The second electrode includes a second bonding portion, a fourth portion, a fifth portion, and a sixth portion. The second bonding portion is formed on the first main surface and is electrically bonded to the semiconductor light-emitting element. Each of the fourth and fifth parts is formed on the first main surface and is located on the other side in the first direction on the substrate. The fourth part is connected to the second bonding portion on the first main surface, The fifth part is separated from the second bonding part on the first main surface and separated from the fourth part in the second direction. The sixth part is formed in a location different from the first main surface, The fourth and fifth parts are electrically connected to each other via the sixth part. The fourth part is located on one side of the second direction in the first main surface, The semiconductor light-emitting apparatus according to any one of claims 1 to 10, wherein the fifth part is located on the other side of the second direction in the first main surface.

12. The first main surface has a first end edge located on the other side in the second direction, The semiconductor light-emitting apparatus according to claim 11, wherein the fifth part is in contact with the first edge.

13. The semiconductor light-emitting apparatus according to claim 12, wherein the fifth dimension, which is the length of the fifth part in the second direction, is the same as or greater than the fourth dimension, which is the length of the fourth part in the second direction.

14. The semiconductor light-emitting apparatus according to claim 12 or 13, wherein the ratio of the length of the fifth part in the second direction to the length of the first main surface in the second direction is in the range of 0.1 to 0.8 times.

15. The sixth part is formed on the second main surface, and the semiconductor light-emitting apparatus is as described in any one of claims 11 to 14.

16. The second main surface has a second edge located on one side of the second direction and a third edge located on the other side of the second direction. The semiconductor light-emitting apparatus according to claim 15, wherein the sixth part is in contact with both the second edge and the third edge.

17. The sixth portion further comprises a second insulating film laminated thereon, The semiconductor light-emitting apparatus according to claim 15 or 16, wherein the second insulating film divides the sixth portion into one side and the other side in the second direction when viewed in the thickness direction.

18. The semiconductor light-emitting apparatus according to any one of claims 11 to 14, wherein the sixth part overlaps the first main surface when viewed in the thickness direction and is located between the first main surface and the second main surface in the thickness direction.

19. The fifth part is exposed from the light-transmitting resin, and is a semiconductor light-emitting apparatus according to any one of claims 11 to 18.

20. The semiconductor light-emitting device according to any one of claims 1 to 19, wherein the semiconductor light-emitting element is arranged on the first bonding portion.

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