Semiconductor device and method for manufacturing a semiconductor device

Abstract

This semiconductor device comprises two conductive members, a semiconductor element joined to either of the two conductive members, and a relay terminal joined to the two conductive members. The relay terminal has a first band-shaped part and a second band-shaped part joined to the two conductive members, and a linking part linking the first band-shaped part and the second band-shaped part. The first band-shaped part has a first side. The linking part has a first intermediate side and a first linking side linking the first side and the first intermediate side. When viewed in the thickness direction, the first linking side is positioned away from a first virtual intersection, which is an intersection between a first virtual line overlapping the first side and a second virtual line overlapping the first intermediate side.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device including two adjacent conductive members and a relay terminal joined to the two conductive members by ultrasonic vibration, and a method for manufacturing the same.

Background Art

[0002] Patent Document 1 discloses an example of a semiconductor device including a plurality of terminals. The plurality of terminals are joined to a substrate on which a circuit is formed by ultrasonic vibration. Thereby, the substrate and the plurality of terminals are electrically connected to each other. Joining by ultrasonic vibration is suitable for passing a larger current through a joined object compared to soldering.

[0003] However, when the object to be joined by ultrasonic vibration is a flat conductive member, the bending rigidity of the conductive member is relatively small. As a result, a relatively large repetitive stress acts on the conductive member due to ultrasonic vibration, and stress concentration due to the repetitive stress occurs in the conductive member. Therefore, cracks may occur in the conductive member. When cracks occur in the conductive member, the electrical resistance of the conductive member increases, and thus the power loss supplied to the semiconductor device increases.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In view of the above circumstances, one problem of the present disclosure is to provide a semiconductor device and a method for manufacturing the same that can suppress cracks generated in a relay terminal joined to two conductive members during manufacturing of the device.

Means for Solving the Problems

[0006] A semiconductor device provided by a first aspect of this disclosure comprises two conductive members adjacent to each other in a first direction orthogonal to the thickness direction, a semiconductor element bonded to one of the two conductive members, and a relay terminal bonded to the two conductive members, wherein the relay terminal has a first strip portion and a second strip portion bonded to the two conductive members, and a connecting portion connecting the first strip portion and the second strip portion, and the first strip portion and the second strip portion extend in the first direction and are orthogonal to the thickness direction and the first direction The two strips are adjacent to each other in two directions, and the connecting portion is located between the first strip and the second strip in the second direction, the first strip has a first edge extending in the first direction, the connecting portion has a first intermediate edge extending in the second direction, and a first connecting edge connecting the first edge and the first intermediate edge, and in the thickness direction, the first connecting edge is located away from a first virtual intersection point which is the intersection point of a first virtual line extending in the first direction and overlapping the first edge, and a second virtual line extending in the second direction and overlapping the first intermediate edge.

[0007] A method for manufacturing a semiconductor device provided by a second aspect of this disclosure comprises the steps of: joining a relay terminal to two conductive members adjacent to each other in a first direction perpendicular to the thickness direction by ultrasonic vibration; and joining a semiconductor element to one of the two conductive members, wherein the relay terminal extends in the first direction and comprises a first strip-shaped portion and a second strip-shaped portion adjacent to each other in the thickness direction and a second direction perpendicular to the first direction, and a connecting portion located between the first strip-shaped portion and the second strip-shaped portion in the second direction and connecting the first strip-shaped portion and the second strip-shaped portion. The process of joining the relay terminals includes the steps of sequentially pressing a capillary onto the regions of the first and second strip-shaped portions that overlap the two conductive members when viewed in the thickness direction, thereby forming a plurality of first bonding marks on the first and second strip-shaped portions, and pressing the capillary onto either the first or second strip-shaped portion so as to overlap the first bonding mark that was formed first among the plurality of first bonding marks, wherein in the step of forming the second bonding mark, the capillary is pressed across the periphery of the first bonding mark. [Effects of the Invention]

[0008] According to the semiconductor device and its manufacturing method described herein, it is possible to suppress cracks that occur in the relay terminals joined to two conductive members during the manufacturing of the device.

[0009] Other features and advantages of this disclosure will become more apparent from the detailed description below, based on the accompanying drawings. [Brief explanation of the drawing]

[0010] [Figure 1] Figure 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] Figure 2 is a plan view of the semiconductor device shown in Figure 1. [Figure 3] Figure 3 is a plan view corresponding to Figure 2, and it is transparent to the top panel. [Figure 4]FIG. 4 is a front view of the semiconductor device shown in FIG. 1. [Figure 5] FIG. 5 is a right side view of the semiconductor device shown in FIG. 1. [Figure 6] FIG. 6 is a left side view of the semiconductor device shown in FIG. 1. [Figure 7] FIG. 7 is a bottom view of the semiconductor device shown in FIG. 1. [Figure 8] FIG. 8 is a partially enlarged view on one side in the first direction of FIG. 3. [Figure 9] FIG. 9 is a partially enlarged view on the other side in the first direction of FIG. 3. [Figure 10] FIG. 10 is a partially enlarged view of the central part of FIG. 3. [Figure 11] FIG. 11 is a cross-sectional view taken along line XI-XI of FIG. 3. [Figure 12] FIG. 12 is a cross-sectional view taken along line XII-XII of FIG. 3. [Figure 13] FIG. 13 is a cross-sectional view taken along line XIII-XIII of FIG. 3. [Figure 14] FIG. 14 is a partially enlarged view of FIG. 10. [Figure 15] FIG. 15 is a partially enlarged view on one side in the first direction of FIG. 14. [Figure 16] FIG. 16 is a partially enlarged view on the other side in the first direction of FIG. 14. [Figure 17] FIG. 17 is a cross-sectional view for explaining the bonding method of the relay terminal shown in FIG. 14. [Figure 18] FIG. 18 is a partially enlarged view of the first semiconductor element shown in FIG. 8 and its periphery. [Figure 19] FIG. 19 is a partially enlarged view of the second semiconductor element shown in FIG. 8 and its periphery. [Figure 20] FIG. 20 is a circuit diagram of the semiconductor device shown in FIG. 1. [Figure 21] FIG. 21 is a partially enlarged plan view of the first modification of the semiconductor device shown in FIG. 1. [Figure 22] FIG. 22 is a partially enlarged plan view of the second modification of the semiconductor device shown in FIG. 1. [Figure 23] FIG. 23 is a partially enlarged plan view of a semiconductor device according to the second embodiment of the present disclosure. [Figure 24] FIG. 24 is a partially enlarged plan view for explaining a manufacturing process of the semiconductor device shown in FIG. 23. [Figure 25] FIG. 25 is a partially enlarged plan view for explaining a manufacturing process of the semiconductor device shown in FIG. 23. [Figure 26] FIG. 26 is a partially enlarged plan view for explaining a manufacturing process of the semiconductor device shown in FIG. 23. [Figure 27] FIG. 27 is a partially enlarged plan view for explaining a manufacturing process of the semiconductor device shown in FIG. 23. [Figure 28] FIG. 28 is a partially enlarged plan view for explaining a manufacturing process of the semiconductor device shown in FIG. 23.

Mode for Carrying Out the Invention

[0011] A mode for carrying out the present disclosure will be described based on the accompanying drawings.

[0012] Based on FIGS. 1 to 19, a semiconductor device A10 according to the first embodiment of the present disclosure will be described. The semiconductor device A10 includes a plurality of base materials 11, a plurality of conductive members 20, a plurality of input terminals 41, an output terminal 42, a plurality of relay terminals 26, and a plurality of semiconductor elements 31. Further, the semiconductor device A10 includes a plurality of gate wirings 24, a plurality of detection wirings 25, a plurality of gate terminals 43, a plurality of detection terminals 44, a plurality of diodes 32, a heat dissipation member 13, and a case 60. Here, FIGS. 3 and 8 to 11 are shown through the top plate 69 for convenience of understanding. In FIG. 3, the line XI-XI is shown as a dashed line.

[0013] The semiconductor device A10 shown in Figure 1 is a power module. The semiconductor device A10 is used in inverters for various electrical products and hybrid vehicles. As shown in Figures 1 and 2, the semiconductor device A10 is rectangular (or approximately rectangular) when viewed in the thickness direction z. The thickness direction z refers to the direction along the thickness of the multiple first conductive members 20A. Here, for the sake of explanation, the direction perpendicular to the thickness direction z is called the first direction x. The direction perpendicular to both the thickness direction z and the first direction x is called the second direction y. The first direction x is the longitudinal direction of the semiconductor device A10.

[0014] As shown in Figure 11, the multiple substrates 11 are electrical insulating members supported by the heat dissipation member 13. In semiconductor device A10, the multiple substrates 11 include two substrates 11 that are adjacent to each other in the first direction x. In the description of semiconductor device A10, the two substrates 11 are referred to as the first substrate 11A and the second substrate 11B. In addition to the case of multiple substrates 11 as in semiconductor device A10, there may also be a single substrate 11. The first substrate 11A and the second substrate 11B have a main surface 111 and a back surface 112 that face opposite each other in the thickness direction z. As shown in Figure 10, a gap S is provided between the first substrate 11A and the second substrate 11B.

[0015] The multiple substrates 11 are made of a material containing ceramics with excellent thermal conductivity. Examples of such ceramics include aluminum nitride (AlN). A DBC (Direct Bonded Copper) substrate may also be used as the multiple substrates 11. A DBC substrate is made by directly bonding copper (Cu) foil to both sides of a substrate containing aluminum nitride in the thickness direction z.

[0016] Each of the multiple conductive members 20 is arranged on the main surface 111 of one of the multiple substrates 11, as shown in Figure 3. The multiple conductive members 20 include multiple first conductive members 20A, multiple second conductive members 20B, and multiple third conductive members 20C. The composition of the multiple conductive members 20 includes copper. When DBC substrates are used as the multiple substrates 11, the multiple conductive members 20 can be easily obtained by patterning copper foil bonded to the main surface 111. The surface of the multiple conductive members 20 may be plated with silver (Ag).

[0017] As shown in Figure 3, the plurality of first conductive members 20A include two first conductive members 20A adjacent to each other in the first direction x. The plurality of first conductive members 20A are individually arranged on the main surface 111 of the plurality of base materials 11 (first base material 11A and second base material 11B). The plurality of second conductive members 20B include two second conductive members 20B adjacent to each other in the first direction x, and are located next to the plurality of first conductive members 20A in the second direction y. The plurality of second conductive members 20B are individually arranged on the main surface 111 of the plurality of base materials 11. The plurality of third conductive members 20C include two third conductive members 20C adjacent to each other in the first direction x, and are located on the opposite side from the plurality of first conductive members 20A in the second direction y, with the plurality of second conductive members 20B in between. The plurality of third conductive members 20C are individually arranged on the main surface 111 of the plurality of base materials 11.

[0018] As shown in Figure 3, the multiple gate wirings 24 are arranged on the main surfaces 111 of the multiple substrates 11. The multiple gate wirings 24 include multiple first gate wirings 24A and multiple second gate wirings 24B. The multiple first gate wirings 24A are individually arranged on the multiple substrates 11 and are adjacent to each other in a first direction x. The multiple first gate wirings 24A are in close proximity to the multiple first conductive members 20A in a second direction y. The multiple second gate wirings 24B are individually arranged on the multiple substrates 11 and are adjacent to each other in a first direction x. The multiple second gate wirings 24B are in close proximity to the multiple third conductive members 20C in a second direction y.

[0019] As shown in Figure 3, the multiple detection wires 25 are arranged on the main surfaces 111 of the multiple substrates 11. The multiple detection wires 25 include multiple first detection wires 25A and multiple second detection wires 25B. The multiple first detection wires 25A are individually arranged on the multiple substrates 11 and are adjacent to each other in the first direction x. The multiple first detection wires 25A are located between the multiple first conductive members 20A and the multiple first gate wires 24A in the second direction y. The multiple second detection wires 25B are individually arranged on the multiple substrates 11 and are adjacent to each other in the first direction x. The multiple second detection wires 25B are located between the multiple third conductive members 20C and the multiple second gate wires 24B in the second direction y.

[0020] Each of the multiple relay terminals 26 is joined to two adjacent conductive members 20 in the first direction x, as shown in Figures 3 and 10. The multiple relay terminals 26 are flat plates perpendicular to the thickness direction z. The multiple relay terminals 26 are made of metal plates. The composition of the metal plates includes copper. The thickness of each of the multiple relay terminals 26 is, for example, 0.3 mm or more and 0.5 mm or less. Therefore, the thickness of each of the multiple relay terminals 26 is thinner than the thickness of each of the multiple input terminals 41 and output terminals 42. Furthermore, the thickness of each of the multiple relay terminals 26 is thicker than the thickness of each of the multiple conductive members 20.

[0021] As shown in Figure 10, the multiple relay terminals 26 include a first relay terminal 26A, a second relay terminal 26B, and a third relay terminal 26C. The shapes of the second relay terminal 26B and the third relay terminal 26C are identical to the shape of the first relay terminal 26A. The first relay terminal 26A is joined to multiple first conductive members 20A across a gap S. As a result, the multiple first conductive members 20A are electrically connected to each other. The second relay terminal 26B is joined to multiple second conductive members 20B across a gap S. As a result, the multiple second conductive members 20B are electrically connected to each other. The third relay terminal 26C is joined to multiple third conductive members 20C across a gap S. As a result, the multiple third conductive members 20C are electrically connected to each other. The first relay terminal 26A, the second relay terminal 26B, and the third relay terminal 26C are arranged along the second direction y.

[0022] As shown in Figure 14, each of the multiple relay terminals 26 has a first strip-shaped portion 261, a second strip-shaped portion 262, and a connecting portion 263. Figure 14 shows the first relay terminal 26A among the multiple relay terminals 26, but the configurations of the second relay terminal 26B and the third relay terminal 26C are the same as those of the first relay terminal 26A. Therefore, the specific configurations of the multiple relay terminals 26 will be explained using the first relay terminal 26A as a representative example.

[0023] As shown in Figure 14, the first strip portion 261 and the second strip portion 262 are joined to two conductive members 20 (multiple first conductive members 20A) that are adjacent to each other in the first direction x among a plurality of conductive members 20. The first strip portion 261 and the second strip portion 262 extend in the first direction x and are adjacent to each other in the second direction y. The connecting portion 263 connects the first strip portion 261 and the second strip portion 262. The connecting portion 263 is located between the first strip portion 261 and the second strip portion 262 in the second direction y.

[0024] As shown in Figure 14, the first strip portion 261 has a first side 261A and a third side 261B. The first side 261A and the third side 261B extend in the first direction x. The third side 261B is located on the opposite side from the first side 261A in the first direction x, with the connecting portion 263 in between.

[0025] As shown in Figure 14, the second strip portion 262 has a second side 262A and a fourth side 262B. The second side 262A and the fourth side 262B extend in the first direction x. The fourth side 262B is located on the opposite side from the second side 262A in the first direction x, with the connecting portion 263 in between. The second side 262A faces the first side 261A of the first strip portion 261 in the second direction y. The fourth side 262B faces the third side 261B of the first strip portion 261 in the second direction y.

[0026] As shown in Figures 14 and 15, the connecting portion 263 has a first intermediate side 263A, a first connecting side 263B, and a second connecting side 263C. The first intermediate side 263A extends in the second direction y. The first connecting side 263B connects the first intermediate side 263A to the first side 261A of the first strip-shaped portion 261. The second connecting side 263C connects the first intermediate side 263A to the second side 262A of the second strip-shaped portion 262.

[0027] As shown in Figures 14 and 16, the connecting portion 263 has a second intermediate side 263D, a third connecting side 263E, and a fourth connecting side 263F. The second intermediate side 263D extends in the second direction y. The second intermediate side 263D is located on the opposite side from the first intermediate side 263A in the first direction x. The third connecting side 263E connects the second intermediate side 263D to the third side 261B of the first strip portion 261. The fourth connecting side 263F connects the second intermediate side 263D to the fourth side 262B of the second strip portion 262.

[0028] As shown in Figure 14, a first virtual line 267A, a second virtual line 267B, a third virtual line 267C, and a fourth virtual line 267D are set at the relay terminal 26. The first virtual line 267A extends in the first direction x and overlaps the first side 261A and the third side 261B of the first strip-shaped portion 261 when viewed in the thickness direction z. The second virtual line 267B extends in the second direction y and overlaps the first intermediate side 263A of the connecting portion 263 when viewed in the thickness direction z. The third virtual line 267C extends in the first direction x and overlaps the second side 262A and the fourth side 262B of the second strip-shaped portion 262 when viewed in the thickness direction z. The fourth virtual line 267D extends in the second direction y and overlaps the second intermediate side 263D of the connecting portion 263 when viewed in the thickness direction z.

[0029] In this case, as shown in Figure 15, the first connecting edge 263B of the connecting portion 263 is located away from the first virtual intersection 268A when viewed in the thickness direction z. The first virtual intersection 268A is the intersection of the first virtual line 267A and the second virtual line 267B. The second connecting edge 263C of the connecting portion 263 is located away from the second virtual intersection 268B when viewed in the thickness direction z. The second virtual intersection 268B is the intersection of the second virtual line 267B and the third virtual line 267C.

[0030] Furthermore, as shown in Figure 16, when viewed in the thickness direction z, the third connecting edge 263E of the connecting portion 263 is located away from the third virtual intersection point 268C. The third virtual intersection point 268C is the intersection of the first virtual line 267A and the fourth virtual line 267D. When viewed in the thickness direction z, the fourth connecting edge 263F of the connecting portion 263 is located away from the fourth virtual intersection point 268D. The fourth virtual intersection point 268D is the intersection of the third virtual line 267C and the fourth virtual line 267D.

[0031] As shown in Figures 15 and 16, in semiconductor device A10, the first connecting edge 263B, second connecting edge 263C, third connecting edge 263E, and fourth connecting edge 263F of the connecting portion 263 form a curve that is recessed inward from the first relay terminal 26A when viewed in the thickness direction z. When viewed in the thickness direction z, a part of the connecting portion 263 is surrounded by the first connecting edge 263B, the first virtual line 267A, and the second virtual line 267B.

[0032] Each of the first strip-shaped portion 261 and second strip-shaped portion 262 of the multiple relay terminals 26 is joined to two adjacent conductive members 20 in the first direction x by ultrasonic vibration as shown in Figure 17. As shown in Figure 17, one side of the first strip-shaped portion 261 and the second strip-shaped portion 262 in the first direction x is in contact with one of the two adjacent conductive members 20 in the first direction x. In this state, a compressive load in the thickness direction z is applied by the capillary 81 to each end of the first strip-shaped portion 261 and the second strip-shaped portion 262 that overlap the conductive member 20 in the thickness direction z. Next, ultrasonic vibration along the second direction y is generated in the capillary 81. The frequency of the ultrasonic vibration is, for example, 20 kHz or more and 60 kHz or less. As a result, each end of the first strip-shaped portion 261 and the second strip-shaped portion 262 is joined to one of the multiple conductive members 20. Furthermore, the multiple teeth provided in the internal connection parts 412 of the multiple input terminals 41 and the internal connection parts 422 of the output terminal 42, as described above, can also be joined to the object by applying ultrasonic vibrations along the second direction y shown in Figure 17 to these teeth.

[0033] As shown in Figure 10, the semiconductor device A10 includes a plurality of first conductive members 27A. The plurality of first conductive members 27A are joined to a plurality of gate wirings 24 so as to straddle the gap S. As a result, the plurality of first gate wirings 24A are electrically connected to each other, and the plurality of second gate wirings 24B are electrically connected to each other. In the semiconductor device A10, each of the plurality of first conductive members 27A is composed of a plurality of wires. These wires are, for example, made of aluminum (Al). The plurality of first conductive members 27A are aligned along a first direction x.

[0034] As shown in Figure 10, the semiconductor device A10 includes a plurality of second conductive members 27B. The plurality of second conductive members 27B are joined to a plurality of detection wirings 25 so as to span the gap S. As a result, the plurality of first detection wirings 25A are electrically connected to each other, and the plurality of second detection wirings 25B are electrically connected to each other. In the semiconductor device A10, each of the plurality of second conductive members 27B is composed of a plurality of metal wires. These wires are, for example, aluminum. The plurality of second conductive members 27B are aligned along a first direction x.

[0035] As shown in Figure 8, the semiconductor device A10 includes a pair of pads 28. The pair of pads 28 are adjacent to each other in a first direction x. The pair of pads 28 are located at the corners of the first substrate 11A. The pair of pads 28 are close to the first conductive member 20A among a plurality of first conductive members 20A that is bonded to the first substrate 11A.

[0036] The multiple input terminals 41 are part of the external connection terminals provided on the semiconductor device A10, as shown in Figures 2 and 3. The multiple input terminals 41 are connected to a DC power supply located outside the semiconductor device A10. The multiple input terminals 41 are supported by the case 60. The multiple input terminals 41 are made of a metal plate, which may include, for example, copper. The thickness of the multiple input terminals 41 is 1.0 mm.

[0037] The multiple input terminals 41 include a first input terminal 41A and a second input terminal 41B. The first input terminal 41A is the positive terminal (P terminal). The first input terminal 41A is joined to the first pad portion 21 of the first conductive member 20A, which is located on the first base material 11A, among the multiple first conductive members 20A. As a result, the first input terminal 41A is electrically connected to the multiple first conductive members 20A. The second input terminal 41B is the negative terminal (N terminal). The second input terminal 41B is joined to the third pad portion 23 of the third conductive member 20C, which is located on the first base material 11A, among the multiple third conductive members 20C. As a result, the second input terminal 41B is electrically connected to the multiple third conductive members 20C. The first input terminal 41A and the second input terminal 41B are adjacent to each other in the second direction y.

[0038] As shown in Figures 8 and 12, each of the first input terminal 41A and the second input terminal 41B has an external connection part 411, an internal connection part 412, and an intermediate part 413.

[0039] The external connection portion 411 is exposed from the semiconductor device A10 and is a flat plate perpendicular to the thickness direction z. A DC power supply cable and the like are connected to the external connection portion 411. The external connection portion 411 is supported by the case 60. The external connection portion 411 is provided with a connection hole 411A that penetrates in the thickness direction z. Fastening members such as bolts are inserted into the connection hole 411A. Nickel (Ni) plating may be applied to the surface of the external connection portion 411.

[0040] The internal connection portion 412 is comb-shaped and is joined to the first pad portion 21 of the first conductive member 20A at the first input terminal 41A, and to the third pad portion 23 of the third conductive member 20C at the second input terminal 41B. In the semiconductor device A10, the internal connection portion 412 has three teeth, and these multiple teeth are arranged along the second direction y. The multiple teeth are bent in the thickness direction z. Therefore, the multiple teeth are hook-shaped when viewed in the second direction y. All of the multiple teeth are joined to the first pad portion 21 and the third pad portion 23 by ultrasonic vibration.

[0041] The intermediate section 413 connects the external connection section 411 and the internal connection section 412 to each other. The intermediate section 413 has an L-shaped cross-section in the first direction x. The intermediate section 413 has a base section 413A and an upright section 413B. The base section 413A is aligned with the first direction x and the second direction y. One end of the base section 413A in the first direction x is connected to the internal connection section 412. The upright section 413B rises from the base section 413A in the thickness direction z. One end of the upright section 413B in the thickness direction z is connected to the external connection section 411.

[0042] As shown in Figures 2 and 3, the output terminal 42 is part of the external connection terminals provided on the semiconductor device A10. The output terminal 42 is connected to a power supply target (such as a motor) located outside the semiconductor device A10. The output terminal 42 is supported by the case 60 and is located on the opposite side of the multiple input terminals 41 from the multiple substrates 11 in the first direction x. The output terminal 42 is made of a metal plate. The metal plate contains, for example, copper. The thickness of the output terminal 42 is 1.0 mm.

[0043] In the semiconductor device A10, the output terminal 42 is separated into two parts: a first terminal section 42A and a second terminal section 42B. Alternatively, the output terminal 42 may be a single component in which the first terminal section 42A and the second terminal section 42B are integrated. The first terminal section 42A and the second terminal section 42B are joined to the second pad section 22 of the second conductive member 20B, which is located on the second base material 11B, among a plurality of second conductive members 20B. As a result, the output terminal 42 is electrically connected to the plurality of second conductive members 20B. The first terminal section 42A and the second terminal section 42B are adjacent to each other in the second direction y.

[0044] As shown in Figures 9 and 13, each of the first terminal section 42A and the second terminal section 42B has an external connection section 421, an internal connection section 422, and an intermediate section 423.

[0045] The external connection portion 421 is exposed from the semiconductor device A10 and is a flat plate perpendicular to the thickness direction z. Cables and the like that which are electrically connected to the power supply target are joined to the external connection portion 421. The external connection portion 421 is supported by the case 60. The external connection portion 421 is provided with a connection hole 421A that penetrates in the thickness direction z. Fastening members such as bolts are inserted into the connection hole 421A. Nickel plating may be applied to the surface of the external connection portion 411.

[0046] The internal connection portion 422 is comb-shaped and joined to the second pad portion 22 of the second conductive member 20B. In the semiconductor device A10, the internal connection portion 412 has three teeth, and these multiple teeth are arranged along the second direction y. The multiple teeth are bent in the thickness direction z. Therefore, the multiple teeth are hook-shaped when viewed in the second direction y. All of the multiple teeth are joined to the second pad portion 22 by ultrasonic vibration.

[0047] The intermediate section 423 connects the external connection section 421 and the internal connection section 422 to each other. The intermediate section 423 has an L-shaped cross-section in the first direction x. The intermediate section 423 has a base section 423A and an upright section 423B. The base section 423A is aligned with the first direction x and the second direction y. One end of the base section 423A in the first direction x is connected to the internal connection section 422. The upright section 423B rises from the base section 423A in the thickness direction z. One end of the upright section 423B in the thickness direction z is connected to the external connection section 421.

[0048] As shown in Figures 2 to 4, the multiple gate terminals 43 are part of the external connection terminals provided on the semiconductor device A10. The multiple gate terminals 43 are electrically connected to the multiple gate wirings 24. The multiple gate terminals 43 are connected to the drive circuit (such as a gate driver) of the semiconductor device A10 located externally. The multiple gate terminals 43 are supported by the case 60. The multiple gate terminals 43 are made of metal rods. These metal rods include, for example, copper. The surfaces of the multiple gate terminals 43 may be tin (Sn) plated, or nickel plated and tin plated. As shown in Figure 11, the multiple gate terminals 43 have an L-shaped cross-section with respect to the first direction x. A portion of each of the multiple gate terminals 43 protrudes from the case 60 in the thickness direction z towards the main surface 111 of the multiple substrates 11.

[0049] The multiple gate terminals 43 include a first gate terminal 43A and a second gate terminal 43B. The first gate terminal 43A is located in close proximity to the multiple first gate wirings 24A in the second direction y, as shown in Figure 10. The second gate terminal 43B is located on the opposite side from the first gate terminal 43A to the multiple substrates 11 in the second direction y, as shown in Figure 10. The second gate terminal 43B is located in close proximity to the multiple second gate wirings 24B.

[0050] As shown in Figures 2 to 4, the multiple detection terminals 44 are part of the external connection terminals provided on the semiconductor device A10. The multiple detection terminals 44 are electrically connected to the multiple detection wirings 25. The multiple detection terminals 44 are connected to the control circuit of the semiconductor device A10, which is located externally. The multiple detection terminals 44 are supported by the case 60. The multiple detection terminals 44 are made of metal rods. These metal rods include, for example, copper. The surfaces of the multiple detection terminals 44 may be tin-plated, or nickel-plated and tin-plated. As shown in Figure 11, the multiple detection terminals 44 have an L-shaped cross-section with respect to the first direction x. A portion of each of the multiple detection terminals 44 protrudes from the case 60 in the thickness direction z towards the main surfaces 111 of the multiple substrates 11.

[0051] The multiple detection terminals 44 include a first detection terminal 44A and a second detection terminal 44B. The first detection terminal 44A is located next to the first gate terminal 43A in the first direction x, as shown in Figure 10. The second detection terminal 44B is located next to the second gate terminal 43B in the first direction x, as shown in Figure 10.

[0052] As shown in Figures 2 to 4 and Figure 9, the semiconductor device A10 is equipped with an input current detection terminal 45. The input current detection terminal 45 is part of the external connection terminals provided on the semiconductor device A10. The input current detection terminal 45 is connected to the control circuit of the semiconductor device A10 located externally. The input current detection terminal 45 is supported by the case 60. The input current detection terminal 45 is made of a metal rod. The metal rod is made of, for example, copper. The surface of the input current detection terminal 45 may be tin-plated, or nickel-plated and tin-plated. The shape of the input current detection terminal 45 is the same as the plurality of gate terminals 43 shown in Figure 11. A part of the input current detection terminal 45 protrudes from the case 60 in the thickness direction z toward the main surface 111 of the plurality of substrates 11, just like the plurality of gate terminals 43 shown in Figure 11. In the second direction y, the position of the input current detection terminal 45 is the same as the position of the first gate terminal 43A. The input current detection terminal 45 is located away from the first gate terminal 43A in the first direction x, on the side where the output terminal 42 is located.

[0053] As shown in Figure 9, the semiconductor device A10 includes an input current detection wire 54. The input current detection wire 54 is connected to an input current detection terminal 45 and to one of a plurality of first conductive members 20A. In the semiconductor device A10, one end of the input current detection wire 54 is connected to a first conductive member 20A located on the second substrate 11B, among the plurality of first conductive members 20A. As a result, the input current detection terminal 45 is electrically connected to the plurality of first conductive members 20A. The input current detection wire 54 is made of, for example, aluminum.

[0054] As shown in Figures 2 to 4 and Figure 8, the semiconductor device A10 is provided with a pair of thermistor terminals 46. The pair of thermistor terminals 46 are part of the external connection terminals provided on the semiconductor device A10. The pair of thermistor terminals 46 are connected to the control circuit of the semiconductor device A10 located externally. The pair of thermistor terminals 46 are supported by the case 60. The pair of thermistor terminals 46 are made of metal rods. The metal rods include, for example, copper. The surface of the pair of thermistor terminals 46 may be tin-plated, or nickel-plated and tin-plated. The shape of the pair of thermistor terminals 46 is the same as the plurality of gate terminals 43 shown in Figure 11. A part of the pair of thermistor terminals 46 protrudes from the case 60 in the thickness direction z toward the main surface 111 of the plurality of substrates 11, just like the plurality of gate terminals 43 shown in Figure 11. In the second direction y, the position of the pair of thermistor terminals 46 is the same as the position of the first gate terminal 43A. The pair of thermistor terminals 46 are located away from the first gate terminal 43A in the first direction x, on the side where the multiple input terminals 41 are located. The pair of thermistor terminals 46 are adjacent to each other in the first direction x.

[0055] As shown in Figure 8, the semiconductor device A10 includes a pair of thermistor wires 55. The pair of thermistor wires 55 are individually connected to a pair of thermistor terminals 46 and a pair of pads 28. As a result, the pair of input current detection terminals 45 are electrically connected to the pair of pads 28. The pair of thermistor wires 55 are made of, for example, aluminum.

[0056] As shown in Figure 3, the multiple semiconductor elements 31 are bonded to a plurality of first conductive members 20A and a plurality of second conductive members 20B. The multiple semiconductor elements 31 include a plurality of first semiconductor elements 31A and a plurality of second semiconductor elements 31B. The plurality of first semiconductor elements 31A are bonded to a plurality of first conductive members 20A and are arranged along a first direction x. The plurality of second semiconductor elements 31B are bonded to a plurality of second conductive members 20B and are arranged along a first direction x. The plurality of semiconductor elements 31 are IGBTs (Insulated Gate Bipolar Transistors) mainly composed of silicon (Si) or silicon carbide (SiC). Note that the plurality of semiconductor elements 31 may also be MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). In the description of the semiconductor device A10, the case in which the plurality of semiconductor elements 31 are IGBTs is assumed.

[0057] As shown in Figures 11, 18, and 19, the plurality of semiconductor elements 31 have a first electrode 311, a second electrode 312, and a gate electrode 313.

[0058] As shown in Figures 18 and 19, the first electrode 311 is provided on the upper end of the semiconductor element 31 located on the side facing the main surfaces 111 of the multiple substrates 11 in the thickness direction z. An emitter current flows from inside the semiconductor element 31 to the first electrode 311. In the semiconductor device A10, the first electrode 311 includes a pair of adjacent regions in the second direction y.

[0059] As shown in Figure 11, the second electrode 312 is provided at the lower end of the semiconductor element 31, located on the opposite side in the thickness direction z from the side facing the main surfaces 111 of the multiple substrates 11. Collector current flows through the second electrode 312 toward the interior of the semiconductor element 31.

[0060] The second electrode 312 is bonded to one of the multiple first conductive members 20A and the multiple second conductive members 20B via a conductive bonding layer 39. As a result, the second electrode 312 of the multiple first semiconductor elements 31A is electrically connected to the multiple first conductive members 20A. The second electrode 312 of the multiple second semiconductor elements 31B is electrically connected to the multiple second conductive members 20B. The conductive bonding layer 39 is made of lead-free solder mainly composed of tin.

[0061] As shown in Figures 18 and 19, the gate electrode 313 is provided on the upper end of the semiconductor element 31 located on the side facing the main surfaces 111 of the multiple substrates 11 in the thickness direction z. In the semiconductor device A10, the gate electrode 313 is sandwiched between a pair of regions of the first electrode 311. A gate voltage is applied to the gate electrode 313 to drive the semiconductor element 31. In the thickness direction z, the area of ​​the gate electrode 313 is smaller than the area of ​​the first electrode 311.

[0062] As shown in Figure 3, the multiple diodes 32 are connected to the multiple first conductive members 20A and the multiple second conductive members 20B. The number of diodes 32 corresponds to the number of semiconductor elements 31. The multiple diodes 32 are individually conductive to the multiple semiconductor elements 31. In semiconductor device A10, the multiple diodes 32 are Schottky barrier diodes.

[0063] As shown in Figures 11, 18, and 19, each of the diodes 32 has an anode electrode 321 and a cathode electrode 322. The anode electrode 321 is provided at the upper end of the diode 32 located on the side facing the main surface 111 of the multiple substrates 11 in the thickness direction z. The cathode electrode 322 is provided at the lower end of the diode 32 located on the side opposite to the side facing the main surface 111 of the multiple substrates 11 in the thickness direction z. The cathode electrode 322 is bonded to one of the multiple first conductive members 20A and the multiple second conductive members 20B via a conductive bonding layer 39. As a result, each of the cathode electrodes 322 of the multiple diodes 32 is electrically connected to one of the multiple first conductive members 20A and the multiple second conductive members 20B.

[0064] As shown in Figures 3 and 8, semiconductor device A10 includes a thermistor 33. The thermistor 33 is electrically connected to a pair of pads 28. In semiconductor device A10, thermistor 33 is an NTC (Negative Temperature Coefficient) thermistor. An NTC thermistor has the characteristic of its resistance decreasing gradually with increasing temperature. The thermistor 33 is used as a temperature detection sensor for semiconductor device A10. The thermistor 33 is electrically connected to a pair of thermistor terminals 46 via a pair of pads 28 and a pair of thermistor wires 55.

[0065] As shown in Figures 18 and 19, the semiconductor device A10 comprises a plurality of first wires 511 to a plurality of sixth wires 516, a plurality of first gate wires 521, and a plurality of first detection wires 531. These wires are individually bonded to a plurality of semiconductor elements 31 and a plurality of diodes 32. The composition of these wires includes, for example, aluminum.

[0066] Based on Figure 18, a plurality of first wires 511, a plurality of second wires 512, and a plurality of third wires 513, each individually connected to a plurality of first semiconductor elements 31A and a plurality of diodes 32 connected to a plurality of first conductive members 20A, will be described. The plurality of first wires 511 are individually connected to the first electrodes 311 of the plurality of first semiconductor elements 31A and to the plurality of first conductive members 20A. The plurality of second wires 512 are individually connected to the anode electrodes 321 of the plurality of diodes 32 and to the plurality of second conductive members 20B. As a result, the first electrodes 311 of the plurality of first semiconductor elements 31A and the anode electrodes 321 of the plurality of diodes 32, each individually connected to these, are electrically connected to the plurality of second conductive members 20B. The plurality of third wires 513 are connected to the first electrodes 311 of the plurality of first semiconductor elements 31A and the anode electrodes 321 of the plurality of diodes 32, each individually connected to these. As a result, the anode electrodes 321 of the multiple diodes 32 joined to the multiple first conductive members 20A are individually connected to the first electrodes 311 of the multiple first semiconductor elements 31A.

[0067] Based on Figure 18, the multiple first gate wires 521 and multiple first detection wires 531, each individually connected to a plurality of first semiconductor elements 31A, will be described. The multiple first gate wires 521 are individually connected to the gate electrodes 313 and multiple first gate wirings 24A of the plurality of first semiconductor elements 31A. The multiple first detection wires 531 are individually connected to the first electrodes 311 and multiple first detection wirings 25A of the plurality of first semiconductor elements 31A.

[0068] Based on Figure 19, a plurality of fourth wires 514, a plurality of fifth wires 515, and a plurality of sixth wires 516, which are individually connected to a plurality of second semiconductor elements 31B and a plurality of diodes 32 connected to a plurality of second conductive members 20B, will be described. The plurality of fourth wires 514 are individually connected to one region of the first electrode 311 of the plurality of second semiconductor elements 31B and to a plurality of third conductive members 20C. The plurality of fifth wires 515 are individually connected to the other region of the first electrode 311 of the plurality of second semiconductor elements 31B and to a plurality of third conductive members 20C. As a result, the first electrode 311 of the plurality of second semiconductor elements 31B is electrically connected to the plurality of third conductive members 20C. The plurality of sixth wires 516 are individually connected to the other region of the first electrode 311 of the plurality of second semiconductor elements 31B and to the anode electrode 321 of the plurality of diodes 32. As a result, the anode electrodes 321 of the multiple diodes 32 joined to the multiple second conductive members 20B are individually electrically connected to the first electrodes 311 of the multiple second semiconductor elements 31B, and are also electrically connected to the multiple third conductive members 20C via the multiple fifth wires 515.

[0069] As shown in Figure 19, the first electrodes 311 of the multiple second semiconductor elements 31B are electrically connected to the multiple third conductive members 20C via the multiple fourth wires 514 and the multiple fifth wires 515. Therefore, the second input terminal 41B is electrically connected to the first electrodes 311 of the multiple second semiconductor elements 31B.

[0070] Based on Figures 8 and 19, a plurality of first gate wires 521 and a plurality of first detection wires 531, each individually connected to a plurality of second semiconductor elements 31B, will be described. The plurality of first gate wires 521 are individually connected to the gate electrodes 313 and the plurality of second gate wirings 24B of the plurality of second semiconductor elements 31B. The plurality of first detection wires 531 are individually connected to the first electrodes 311 and the plurality of second detection wirings 25B of the plurality of second semiconductor elements 31B.

[0071] As shown in Figure 10, the semiconductor device A10 includes a pair of second gate wires 522. The pair of second gate wires 522 are connected to a plurality of gate terminals 43 and a plurality of gate wirings 24. The plurality of second gate wires 522 are made of, for example, aluminum.

[0072] As shown in Figure 10, one second gate wire 522 is connected to the first gate terminal 43A and to the first gate wiring 24A located on the first substrate 11A, among the plurality of first gate wirings 24A. As a result, the first gate terminal 43A is electrically connected to the gate electrodes 313 of the plurality of first semiconductor elements 31A. As shown in Figure 10, the other second gate wire 522 is connected to the second gate terminal 43B and to the second gate wiring 24B located on the second substrate 11B, among the plurality of second gate wirings 24B. As a result, the second gate terminal 43B is electrically connected to the gate electrodes 313 of the plurality of second semiconductor elements 31B.

[0073] As shown in Figure 10, the semiconductor device A10 includes a pair of second detection wires 532. The pair of second detection wires 532 are connected to a plurality of detection terminals 44 and a plurality of detection wirings 25. The plurality of second detection wires 532 are made of, for example, aluminum.

[0074] As shown in Figure 10, one second detection wire 532 is connected to a first detection terminal 44A and to a first detection wiring 25A located on the second substrate 11B, among a plurality of first detection wirings 25A. As a result, the first detection terminal 44A is electrically connected to the first electrode 311 of the plurality of first semiconductor elements 31A. As shown in Figure 10, the other second detection wire 532 is connected to a second detection terminal 44B and to a second detection wiring 25B located on the first substrate 11A, among a plurality of second detection wirings 25B. As a result, the second detection terminal 44B is electrically connected to the first electrode 311 of the plurality of second semiconductor elements 31B.

[0075] As shown in Figure 11, the heat dissipation member 13 is bonded to the back surface 112 of the first substrate 11A and the back surface 112 of the second substrate 11B. Thus, the first substrate 11A and the second substrate 11B are supported by the heat dissipation member 13. The heat dissipation member 13 is made of a flat metal plate. This metal is, for example, copper. Nickel plating may also be applied to the surface of the heat dissipation member 13. A cooling member different from the heat dissipation member 13 may be attached to the portion of the heat dissipation member 13 exposed from the semiconductor device A10. As shown in Figures 7 to 9, a plurality of support holes 131 are provided at the four corners of the heat dissipation member 13 when viewed in the thickness direction z. The plurality of support holes 131 penetrate the heat dissipation member 13 in the thickness direction z. The plurality of support holes 131 are used to support the heat dissipation member 13, on which the first substrate 11A and the second substrate 11B are supported, in the case 60.

[0076] As shown in Figure 11, the heat transfer member 12 is positioned on the back surface 112 of the first substrate 11A and the back surface 112 of the second substrate 11B. The heat transfer member 12 is made of a metallic material such as copper foil. The heat transfer member 12 conducts the heat generated from the multiple semiconductor elements 31 to the heat dissipation member 13.

[0077] As shown in Figure 11, the adhesive layer 19 is interposed between the heat dissipation member 13 and the heat transfer member 12. The adhesive layer 19 is used to bond the heat dissipation member 13 to both the first base material 11A and the second base material 11B. The adhesive layer 19 is a lead-free solder mainly composed of tin. The heat dissipation member 13 is bonded to both the first base material 11A and the second base material 11B via the heat transfer member 12 and the adhesive layer 19.

[0078] As shown in Figures 2 to 6, the case 60 is an electrical insulating member that surrounds the first base material 11A and the second base material 11B when viewed in the thickness direction z. The case 60 is made of a material containing a synthetic resin with excellent heat resistance, such as PPS (polyphenylene sulfide). The case 60 has a pair of first side walls 611, a pair of second side walls 612, a plurality of mounting parts 62, an input terminal block 63, and an output terminal block 64.

[0079] As shown in Figures 2 and 3, the pair of first side walls 611 are spaced apart from each other in the first direction x. The pair of first side walls 611 are arranged along both the second direction y and the thickness direction z, and one end in the thickness direction z is in contact with the heat dissipation member 13.

[0080] As shown in Figures 2 and 3, the pair of second side walls 612 are spaced apart from each other in the second direction y. The pair of second side walls 612 are arranged along both the first direction x and the thickness direction z, and one end in the thickness direction z is in contact with the heat dissipation member 13. Both ends of the pair of second side walls 612 in the first direction x are connected to the pair of first side walls 611. Inside one of the second side walls 612 are the first gate terminal 43A, the first detection terminal 44A, the input current detection terminal 45, and the pair of thermistor terminals 46. Inside the other second side wall 612 are the second gate terminal 43B and the second detection terminal 44B. As shown in Figures 8 to 10, the ends of these terminals that are close to the first base material 11A and the second base material 11B in the thickness direction z are supported by the pair of second side walls 612.

[0081] As shown in Figures 2, 8, and 9, the multiple mounting portions 62 are located at the four corners of the case 60 when viewed in the thickness direction z. The heat dissipation member 13 is in contact with the lower surfaces of the multiple mounting portions 62. Each of the multiple mounting portions 62 is provided with a mounting hole 621 that penetrates in the thickness direction z. The positions of the multiple mounting holes 621 correspond to the positions of the multiple support holes 131 of the heat dissipation member 13. The heat dissipation member 13 is supported by the case 60 by fitting fastening members such as pins into the multiple mounting holes 621 and the multiple support holes 131.

[0082] As shown in Figures 2, 5, and 8, the input terminal block 63 protrudes outward in a first direction x from one of its first side walls 611. The input terminal block 63 supports a plurality of input terminals 41. The input terminal block 63 has a first terminal block 631 and a second terminal block 632. The first terminal block 631 and the second terminal block 632 are spaced apart from each other in a second direction y. The first input terminal 41A is supported by the first terminal block 631. The external connection portion 411 of the first input terminal 41A is exposed from the first terminal block 631. The second input terminal 41B is supported by the second terminal block 632. The external connection portion 411 of the second input terminal 41B is exposed from the second terminal block 632. A plurality of grooves 633 extending in a first direction x are formed between the first terminal block 631 and the second terminal block 632. As shown in Figures 8 and 12, a pair of nuts 634 are arranged inside the first terminal block 631 and the second terminal block 632. The pair of nuts 634 correspond to a pair of connection holes 411A provided in the first input terminal 41A and the second input terminal 41B. Fastening members such as bolts inserted into the pair of connection holes 411A fit onto the pair of nuts 634.

[0083] As shown in Figures 2, 6, and 9, the output terminal block 64 protrudes outward in a first direction x from the other first side wall 611. The output terminal 42 is supported by the output terminal block 64. The output terminal block 64 has a first terminal block 641 and a second terminal block 642. The first terminal block 641 and the second terminal block 642 are spaced apart from each other in a second direction y. The first terminal block 641 supports the first terminal portion 42A of the output terminal 42. The external connection portion 421 of the first terminal portion 42A is exposed from the first terminal block 641. The second terminal block 642 supports the second terminal portion 42B of the output terminal 42. The external connection portion 421 of the second terminal portion 42B is exposed from the second terminal block 642. Between the first terminal block 641 and the second terminal block 642, a plurality of grooves 643 extending in a first direction x are formed. As shown in Figures 9 and 13, a pair of nuts 644 are arranged inside the first terminal block 641 and the second terminal block 642. The pair of nuts 644 correspond to a pair of connection holes 421A provided in the first terminal section 42A and the second terminal section 42B. Fastening members such as bolts inserted into the pair of connection holes 421A fit onto the pair of nuts 644.

[0084] As shown in Figure 2, the top plate 69 is a component that covers the internal region of the semiconductor device A10 formed by the heat dissipation member 13 and the case 60. The top plate 69 faces the main surfaces 111 of the multiple substrates 11. The top plate 69 is supported by a pair of first side walls 611 and a pair of second side walls 612 of the case 60. The top plate 69 is made of a material containing an electrically insulating synthetic resin. Alternatively, the internal region of the semiconductor device A10 may be filled with silicone gel or the like instead of the top plate 69.

[0085] Next, the circuit configuration of semiconductor device A10 will be described based on Figure 20.

[0086] As shown in Figure 20, the semiconductor device A10 has two switching circuits: an upper arm circuit 71 and a lower arm circuit 72. The upper arm circuit 71 is composed of a plurality of first conductive members 20A, a plurality of first semiconductor elements 31A, and a plurality of diodes 32 joined to the plurality of first conductive members 20A. The plurality of first semiconductor elements 31A and the plurality of diodes 32 that constitute the upper arm circuit 71 are connected in parallel between the first input terminal 41A and the output terminal 42. The gate electrodes 313 of the plurality of first semiconductor elements 31A are connected in parallel to the first gate terminal 43A. The plurality of first semiconductor elements 31A are driven simultaneously when a gate voltage is applied to the first gate terminal 43A by a drive circuit such as a gate driver located outside the semiconductor device A10.

[0087] The first electrodes 311 of multiple first semiconductor elements 31A are connected in parallel to the first detection terminal 44A. The emitter current flowing through the multiple first semiconductor elements 31A is input to a control circuit located outside the semiconductor device A10 via the first detection terminal 44A.

[0088] In the upper arm circuit 71, the voltages applied to the multiple first conductive members 20A by the first input terminal 41A and the second input terminal 41B are input to the control circuit of the externally located semiconductor device A10 via the input current detection terminal 45.

[0089] The lower arm circuit 72 is composed of a plurality of second conductive members 20B, a plurality of second semiconductor elements 31B, and a plurality of diodes 32 connected to the plurality of second conductive members 20B. The plurality of second semiconductor elements 31B and the plurality of diodes 32 constituting the lower arm circuit 72 are connected in parallel between the output terminal 42 and the second input terminal 41B. The gate electrodes 313 of the plurality of second semiconductor elements 31B are connected in parallel to the second gate terminal 43B. The plurality of second semiconductor elements 31B are driven simultaneously when a gate voltage is applied to the second gate terminal 43B by a drive circuit such as a gate driver located outside the semiconductor device A10.

[0090] The first electrodes 311 of multiple second semiconductor elements 31B are connected in parallel to the second detection terminal 44B. The emitter current flowing through the multiple second semiconductor elements 31B is input to a control circuit located outside the semiconductor device A10 via the second detection terminal 44B.

[0091] When a DC voltage is applied to the first input terminal 41A and the second input terminal 41B, and multiple semiconductor elements 31 in the upper arm circuit 71 and the lower arm circuit 72 are driven, AC voltages of various frequencies are output from the output terminal 42. These AC voltages are supplied to powered devices such as motors.

[0092] Next, a first modified example of semiconductor device A10, semiconductor device A11, will be described based on Figure 21.

[0093] As shown in Figure 21, the configuration of the multiple relay terminals 26 in semiconductor device A11 differs from that of semiconductor device A10. Figure 21 shows the first relay terminal 26A among the multiple relay terminals 26, but the configurations of the second relay terminal 26B and the third relay terminal 26C are the same as those of the first relay terminal 26A. Therefore, in the description of semiconductor device A11, the first relay terminal 26A will be used as a representative example among the multiple relay terminals 26.

[0094] As shown in Figure 21, in semiconductor device A11, the first connecting edge 263B, second connecting edge 263C, third connecting edge 263E, and fourth connecting edge 263F of the connecting portion 263 of the first relay terminal 26A are all straight lines. The first connecting edge 263B, second connecting edge 263C, third connecting edge 263E, and fourth connecting edge 263F are inclined with respect to the first direction x and the second direction y. Viewed in the thickness direction z, a part of the connecting portion 263 is surrounded by the first connecting edge 263B, the first virtual line 267A, and the second virtual line 267B.

[0095] Next, a second modified example of semiconductor device A10, semiconductor device A12, will be described based on Figure 22.

[0096] As shown in Figure 22, the configuration of the first relay terminal 26A in semiconductor device A12 differs from that of semiconductor device A10. Although Figure 22 shows the first relay terminal 26A among the multiple relay terminals 26, the configurations of the second relay terminal 26B and the third relay terminal 26C are the same as those of the first relay terminal 26A. Therefore, in the description of semiconductor device A12, the first relay terminal 26A will be used as a representative example among the multiple relay terminals 26.

[0097] As shown in Figure 22, in semiconductor device A12, the first connecting edge 263B, second connecting edge 263C, third connecting edge 263E, and fourth connecting edge 263F of the connecting portion 263 of the first relay terminal 26A form a curve that is concave inward of the first relay terminal 26A when viewed in the thickness direction z. When viewed in the thickness direction z, the first connecting edge 263B straddles the first virtual line 267A and the second virtual line 267B.

[0098] Next, we will explain the effects and benefits of semiconductor device A10.

[0099] The semiconductor device A10 includes a relay terminal 26 joined to two conductive members 20 adjacent to each other in a first direction x. The relay terminal 26 has a first strip-shaped portion 261, a second strip-shaped portion 262, and a connecting portion 263. The first strip-shaped portion 261 has a first side 261A. The connecting portion 263 has a first intermediate side 263A and a first connecting side 263B that connects the first side 261A and the first intermediate side 263A. Viewed in the thickness direction z, the first connecting side 263B is located away from a first virtual intersection point 268A, which is the intersection point of a first virtual line 267A that overlaps the first side 261A and a second virtual line 267B that overlaps the first intermediate side 263A. Here, when the relay terminal 26 is joined to the two conductive members 20 by ultrasonic vibration as shown in Figure 17, repeated stress is concentrated at the boundary between either the first strip portion 261 or the second strip portion 262 and the connecting portion 263, due to the ultrasonic vibration transmitted from the capillary 81 to the relay terminal 26. By adopting this configuration, the concentration of such repeated stress can be reduced. Therefore, with semiconductor device A10, it is possible to suppress cracks that occur in the relay terminal 26 joined to the two conductive members 20 during the manufacturing of semiconductor device A10.

[0100] The concentration of repeated stress acting at the boundary between either the first strip portion 261 or the second strip portion 262 and the connecting portion 263 can be reduced not only by the configuration of the relay terminal 26 of semiconductor device A10, but also by the configuration of the respective relay terminals 26 of semiconductor device A11 and semiconductor device A12.

[0101] The thickness of the relay terminal 26 is greater than the thickness of each of the two conductive members 20. This reduces the electrical resistance of the relay terminal 26, thereby reducing the internal resistance (parasitic resistance) of the semiconductor device A10 caused by the relay terminal 26. Furthermore, the improved thermal conductivity of the relay terminal 26 mitigates the uneven distribution of heat in the two conductive members 20 caused by the heat generated by the semiconductor element 31. This reduces the concentration of thermal stress in the two substrates 11 where the two conductive members 20 are individually arranged.

[0102] The semiconductor device A10 further includes a first input terminal 41A that conducts to two conductive members 20 (a plurality of first conductive members 20A) and a second input terminal 41B that conducts to one of a semiconductor element 31 (a plurality of second semiconductor elements 31B). The first input terminal 41A and the second input terminal 41B are adjacent to each other. As a result, when a voltage is applied to the first input terminal 41A and the second input terminal 41B, mutual inductance is generated between the first input terminal 41A and the second input terminal 41B. This makes it possible to reduce the parasitic inductance of the semiconductor device A10.

[0103] The semiconductor device A10 further includes a heat dissipation member 13 located on the opposite side of the two conductive members 20, with the two substrates 11 sandwiched between them in the thickness direction z. The two substrates 11 are supported by the heat dissipation member 13. This makes it easier for heat conducted from the semiconductor element 31 to either of the two conductive members 20 to be released to the outside, thereby more efficiently reducing the concentration of thermal stress in the multiple substrates 11.

[0104] A semiconductor device A20 according to a second embodiment of the present disclosure will be described based on Figure 23. In this figure, the same or similar elements of the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted.

[0105] The configuration of the multiple relay terminals 26 in semiconductor device A20 differs from that of semiconductor device A10. Figure 23 shows the first relay terminal 26A among the multiple relay terminals 26, but the configurations of the second relay terminal 26B and the third relay terminal 26C are the same as those of the first relay terminal 26A. Therefore, in the description of semiconductor device A20, the first relay terminal 26A will be used as a representative example among the multiple relay terminals 26.

[0106] As shown in Figure 23, any of the multiple bonding marks 264 of the first relay terminal 26A includes a first region 264A and a second region 264B. The second region 264B overlaps the first region 264A. The stacking order of the first region 264A and the second region 264B does not matter. Viewed in the thickness direction z, the first region 264A and the second region 264B are surrounded by the periphery of any of the multiple first conductive members 20A.

[0107] As shown in Figure 23, the second region 264B has an overhang 264C located outward from the first region 264A. The area of ​​the overhang 264C is smaller than the area of ​​the first region 264A. The overhang 264C is located between the first region 264A and one of the multiple joint marks 264 located adjacent to the first region 264A in the first direction x.

[0108] Next, the manufacturing method of the semiconductor device A20 will be described. The semiconductor device A20 includes a first step and a second step. In the first step, a relay terminal 26 (first relay terminal 26A) is joined to two conductive members 20 (a plurality of first conductive members 20A) that are adjacent to each other in a first direction x, by ultrasonic vibration as shown in Figure 17. In the second step, a plurality of semiconductor elements 31 (a plurality of first semiconductor elements 31A) are joined to the two conductive members 20. The order of the first and second steps is not limited, but it is preferable to perform the first step before the second step in order to prevent vibration transmission to the plurality of semiconductor elements 31 associated with the joining of the relay terminal 26. In the following, the first step will be described in detail based on Figures 24 to 28. The detailed description of the second step will be omitted.

[0109] First, as shown in Figure 24, the relay terminal 26 is placed on the two conductive members 20, and then the relay terminal 26 is pressed against the two conductive members 20 using the clamp 82. Then, the capillary 81 is pressed against either the first strip portion 261 or the second strip portion 262 of the relay terminal 26 that overlaps with either of the two conductive members 20 when viewed in the thickness direction z, thereby forming the first joint mark 265 in that area.

[0110] Next, as shown in Figures 25 to 27, the capillary 81 is sequentially pressed against the areas of the first strip-shaped portion 261 and the second strip-shaped portion 262 of the relay terminal 26 that overlap the two conductive members 20, thereby forming a plurality of first bonding marks 265 on the first strip-shaped portion 261 and the second strip-shaped portion 262. When forming the plurality of first bonding marks 265, the capillary 81 and clamp 82 are moved to predetermined positions. In semiconductor device A20, four first bonding marks 265 are formed. As shown in Figure 27, when forming the fourth first bonding mark 265 in the process of forming the plurality of first bonding marks 265, the clamp 82 is not required.

[0111] Next, as shown in Figure 28, a second joint mark 266 is formed on either the first strip portion 261 or the second strip portion 262 of the relay terminal 26 by pressing the capillary 81 so as to overlap the first joint mark 265 that was formed among the multiple first joint marks 265. In this step, the capillary 81 is pressed across the periphery of the first joint mark 265. Furthermore, the compressive load applied to the capillary 81 when forming the first joint mark 265 is greater than the compressive load applied to the capillary 81 when forming each of the multiple first joint marks 265. With this, the first step is completed.

[0112] Next, we will explain the effects and benefits of semiconductor device A20.

[0113] The semiconductor device A20 includes a relay terminal 26 joined to two conductive members 20 adjacent to each other in a first direction x. The relay terminal 26 has a first strip-shaped portion 261, a second strip-shaped portion 262, and a connecting portion 263. The first strip-shaped portion 261 has a first side 261A. The connecting portion 263 has a first intermediate side 263A and a first connecting side 263B that connects the first side 261A and the first intermediate side 263A. Viewed in the thickness direction z, the first connecting side 263B is located away from a first virtual intersection point 268A, which is the intersection point of a first virtual line 267A overlapping the first side 261A and a second virtual line 267B overlapping the first intermediate side 263A. Therefore, the semiconductor device A20 also makes it possible to suppress cracks that occur in the relay terminal 26 joined to the two conductive members 20 during the manufacturing of the semiconductor device A20.

[0114] Multiple bonding marks 264 are formed on the first strip-shaped portion 261 and the second strip-shaped portion 262 of the relay terminal 26, overlapping the two conductive members 20 when viewed in the thickness direction z. Any of the multiple bonding marks 264 includes a first region 264A and a second region 264B that overlaps the first region 264A. The second region 264B has an overhang portion 264C located outward from the first region 264A. The overhang portion 264C is a mark obtained by forming a second bonding mark 266 that overlaps the first bonding mark 265 that was formed first among the multiple first bonding marks 265 in the first step described above, as shown in Figures 24 to 28. As a result, when joining the relay terminal 26 to the two conductive members 20, the total duration of ultrasonic vibration applied to the relay terminal 26 can be shortened while more firmly joining the relay terminal 26 to the two conductive members 20. By adopting this manufacturing method, the number of cycles of stress amplitude of the repeated stress acting on the relay terminal 26 is reduced, thereby suppressing cracks that occur in the relay terminal 26.

[0115] The protruding portion 264C is preferably located between the first region 264A and one of the multiple bonding marks 264 located adjacent to the first region 264A in the first direction x. This ensures that the end of either the first strip portion 261 or the second strip portion 262 of the relay terminal 26, where the first region 264A and the second region 264B are formed, is more firmly bonded to either of the two first conductive members 20A. Therefore, it is possible to prevent the end from curling up.

[0116] This disclosure is not limited to the embodiments described above. The specific configuration of each part of this disclosure can be modified in various ways.

[0117] This disclosure includes embodiments described in the following appendix. Note 1. Two conductive members adjacent to each other in a first direction perpendicular to the thickness direction, A semiconductor element joined to one of the two conductive members, The relay terminal is joined to the two conductive members, The relay terminal has a first strip-shaped portion and a second strip-shaped portion joined to the two conductive members, and a connecting portion that connects the first strip-shaped portion and the second strip-shaped portion. The first strip portion and the second strip portion extend in the first direction and are adjacent to each other in the thickness direction and in a second direction perpendicular to the first direction. The connecting portion is located between the first strip portion and the second strip portion in the second direction. The first strip-shaped portion has a first edge extending in the first direction, The connecting portion has a first intermediate side extending in the second direction and a first connecting side connecting the first side and the first intermediate side. A semiconductor device in which, when viewed in the thickness direction, the first connecting edge is located away from a first virtual intersection point which is the intersection point of a first virtual line extending in the first direction and overlapping the first edge and a second virtual line extending in the second direction and overlapping the first intermediate edge. Note 2. The first connecting edge is a straight line, as described in Appendix 1, for the semiconductor device. Note 3. The semiconductor device according to Appendix 1, wherein the first connecting edge forms a curve that is recessed inward of the relay terminal when viewed in the thickness direction. Note 4. The semiconductor device according to Appendix 3, wherein, when viewed in the thickness direction, a part of the connecting portion is surrounded by the first connecting edge, the first virtual line, and the second virtual line. Note 5. The semiconductor device according to Appendix 3, wherein, viewed in the thickness direction, the first connecting edge straddles the first virtual line and the second virtual line. Note 6. The second strip extends in the first direction and has a second side opposite to the first side, The connecting portion has a second connecting edge that connects the second edge and the first intermediate edge, The semiconductor device according to any one of the appendices 1 to 5, wherein, viewed in the thickness direction, the second connecting edge is located away from the second virtual intersection point, which is the intersection point of the second virtual line and the third virtual line extending in the first direction and overlapping the second edge. Note 7. The first strip-shaped portion has a third side that is located on the opposite side of the first side in the first direction, with the connecting portion in between, and that overlaps the first imaginary line when viewed in the thickness direction. The connecting portion has a second intermediate side located on the opposite side of the first intermediate side in the first direction and extending in the second direction, and a third connecting side connecting the third side and the second intermediate side. The semiconductor device according to Appendix 6, wherein, in the thickness direction, the third connecting edge is located away from the third virtual intersection point, which is the intersection point of the first virtual line and the fourth virtual line extending in the second direction and overlapping the second intermediate edge. Note 8. The second strip-shaped portion has a fourth side that is located on the opposite side of the second side in the first direction, with the connecting portion in between, and that overlaps the third imaginary line when viewed in the thickness direction. The connecting portion has a fourth connecting edge that connects the fourth edge and the second intermediate edge, The semiconductor device according to Appendix 7, wherein, in the thickness direction, the fourth connecting edge is located away from the fourth virtual intersection, which is the intersection of the third virtual line and the fourth virtual line. Note 9. Multiple bonding marks are formed on the first and second strip-shaped portions, overlapping with either of the two conductive members. Any of the aforementioned plurality of joint marks includes a first region and a second region overlapping the first region. The semiconductor device according to any one of appendices 1 to 8, wherein the second region has an overhang located outward from the first region. Note 10. The semiconductor device according to Appendix 9, wherein, viewed in the thickness direction, the first region and the second region are surrounded by the periphery of either of the two conductive members. Note 11. The semiconductor device according to Appendix 10, wherein the area of ​​the protruding portion is smaller than the area of ​​the first region. Note 12. The semiconductor device according to appendix 10 or 11, wherein the protruding portion is located between the first region and one of the plurality of bonding marks located adjacent to the first region in the first direction. Note 13. The semiconductor device according to any one of the appendices 1 to 12, wherein the thickness of the relay terminal is greater than the thickness of each of the two conductive members. Note 14. Further comprising two substrates adjacent to each other in the first direction, The two conductive members are individually arranged on the two substrates. A semiconductor device according to any one of the appendices 1 to 13, wherein, when viewed in the thickness direction, the connecting portion overlaps the gap provided between the two substrates. Note 15. The heat dissipation member is located on the opposite side of the two conductive members, with the two substrates sandwiched between them in the thickness direction, The semiconductor device described in Appendix 14, wherein the two substrates are supported by the heat dissipation member. Note 16. A first input terminal that is electrically connected to the two aforementioned conductive members, It is further equipped with a second input terminal, The semiconductor device according to Appendix 14 or 15, wherein the first input terminal and the second input terminal are located on one side in the first direction and are adjacent to each other in the second direction. Note 17. It also has output terminals, The semiconductor device according to Appendix 16, wherein the output terminal is located in the first direction, with the two substrates in between, on the opposite side from the first input terminal and the second input terminal. Note 18. A process of joining relay terminals to two adjacent conductive members in a first direction perpendicular to the thickness direction by ultrasonic vibration, The process includes joining a semiconductor element to one of the two conductive members, The relay terminal has a first strip-shaped portion and a second strip-shaped portion that extend in the first direction and are adjacent to each other in the thickness direction and in a second direction perpendicular to the first direction, and a connecting portion that is located between the first strip-shaped portion and the second strip-shaped portion in the second direction and connects the first strip-shaped portion and the second strip-shaped portion, The process of joining the relay terminals includes the steps of sequentially pressing a capillary onto the regions of the first and second strip-shaped portions that overlap the two conductive members when viewed in the thickness direction, thereby forming a plurality of first bonding marks on the first and second strip-shaped portions, and pressing the capillary onto either the first or second strip-shaped portion so as to overlap the first bonding mark that was formed first among the plurality of first bonding marks, A method for manufacturing a semiconductor device, wherein in the step of forming the second bonding mark, the capillary is pressed across the periphery of the first bonding mark. Note 19. The method for manufacturing a semiconductor device according to Appendix 18, wherein the compressive load applied to the capillary when forming the second bond mark is greater than the compressive load applied to the capillary when forming each of the plurality of first bond marks. [Explanation of Symbols]

[0118] A10, A20: Semiconductor device 11: Substrate 11A: First substrate 11B: Second base material 111: Main surface 112: Back surface 12: Heat transfer component 13: Heat dissipation component 131: Support hole 19: Adhesive layer 20: Conductive member 20A: First conductive member 20B: Second conductive member 20C: Third conductive member 21: First pad section 22: Second pad section 23: Third pad section 24: Gate wiring 24A: First gate wiring 24B: Second gate wiring 25: Detection wiring 25A: First detection wiring 25B: Second detection wiring 26: Intermediate terminal 26A: First relay terminal 26B: Second relay terminal 26C: Third relay terminal 261: First strip section 261A: First side 261B: Third side 262: Second strip 262A: Second side 262B: Fourth side 263: Connecting part 263A: First intermediate side 263B: First connecting edge 263C: Second connecting edge 263D: Second intermediate edge 263E: Third connecting edge 263F: Fourth connecting edge 264: Joint mark 264A: First region 264B: Second region 264C: Protruding portion 265: First joint mark 266: Second joint mark 267A: First virtual line 267B: Second virtual line 267C: Third virtual line 267D: Fourth virtual line 268A: First virtual intersection 268B: Second virtual intersection 268C: Third virtual intersection 268D: Fourth virtual intersection 27A: First conductive member 27B: Second conductive member 28: Pad 31: Semiconductor element 31A: First semiconductor element 31B: Second semiconductor element 311: First electrode 312: Second electrode 313: Gate electrode 32: Diode 321: Anode electrode 322: Cathode electrode 33: Thermistor 39: Conductive junction layer 41: Input terminal 41A: First input terminal 41B: Second input terminal 411: External connection part 411A: Connection hole 412: Internal connection part 413: Middle part 413A: Base 413B: Standing part 42: Output terminal 42A: First terminal section 42B: Second terminal section 421: External connection part 421A: Connection hole 422: Internal connection part 423: Middle part 423A: Base 423B: Standing part 43: Gate terminal 43A: First gate terminal 43B: Second gate terminal 44: Detection terminal 44A: First detection terminal 44B: Second detection terminal 45: Input current detection terminal 46: Thermistor terminals 511~516: Wire 1~Wire 6 521: First gate wire 522: Second gate wire 531: First detection wire 532: Second detection wire 54: Input current detection wire 55: Thermistor wire 60: Case 611: First side wall 612: Second side wall 62: Mounting base 621: Mounting hole 63: Input terminal block 631: 1st terminal block 632: 2nd terminal block 633: Groove 634: Nut 64: Output terminal block 641: First terminal block 642: Second terminal block 643: Groove 644: Nut 69: Top plate 71: Upper arm circuit 72: Lower arm circuit 81: Capillary 82: Clamp z: Thickness direction x: 1st direction y: 2nd direction

Claims

1. Two conductive members adjacent to each other in a first direction perpendicular to the thickness direction, A semiconductor element joined to one of the two conductive members, The system comprises a relay terminal joined to the two conductive members, The relay terminal has a first strip-shaped portion and a second strip-shaped portion joined to the two conductive members, and a connecting portion that connects the first strip-shaped portion and the second strip-shaped portion. The first strip portion and the second strip portion extend in the first direction and are adjacent to each other in the thickness direction and in a second direction perpendicular to the first direction. The connecting portion is located between the first strip portion and the second strip portion in the second direction. The first strip-shaped portion has a first edge extending in the first direction, The connecting portion has a first intermediate side extending in the second direction and a first connecting side connecting the first side and the first intermediate side. A semiconductor device in which, when viewed in the thickness direction, the first connecting edge is located away from a first virtual intersection point which is the intersection point of a first virtual line extending in the first direction and overlapping the first edge and a second virtual line extending in the second direction and overlapping the first intermediate edge.

2. The semiconductor device according to claim 1, wherein the first connecting edge forms a straight line.

3. The semiconductor device according to claim 1, wherein the first connecting edge forms a curve that is recessed inward of the relay terminal when viewed in the thickness direction.

4. The semiconductor device according to claim 3, wherein, when viewed in the thickness direction, a part of the connecting portion is surrounded by the first connecting edge, the first virtual line, and the second virtual line.

5. The semiconductor device according to claim 3, wherein, viewed in the thickness direction, the first connecting edge straddles the first virtual line and the second virtual line.

6. The second strip extends in the first direction and has a second side opposite to the first side, The connecting portion has a second connecting side that connects the second side and the first intermediate side, The semiconductor device according to claim 1, wherein, in view in the thickness direction, the second connecting edge is located away from a second virtual intersection point which is the intersection point of the second virtual line and a third virtual line that extends in the first direction and overlaps the second edge.

7. The first strip-shaped portion has a third side that is located on the opposite side of the first side in the first direction, with the connecting portion in between, and that overlaps the first imaginary line when viewed in the thickness direction. The connecting portion has a second intermediate side located on the opposite side of the first intermediate side in the first direction and extending in the second direction, and a third connecting side connecting the third side and the second intermediate side. The semiconductor device according to claim 6, wherein, in view in the thickness direction, the third connecting edge is located away from the third virtual intersection point, which is the intersection point of the first virtual line and the fourth virtual line extending in the second direction and overlapping the second intermediate edge.

8. The second strip-shaped portion has a fourth side that is located on the opposite side of the second side in the first direction, with the connecting portion in between, and that overlaps with the third imaginary line when viewed in the thickness direction. The connecting portion has a fourth connecting edge that connects the fourth edge and the second intermediate edge, The semiconductor device according to claim 7, wherein, in the thickness direction, the fourth connecting edge is located away from the fourth virtual intersection, which is the intersection of the third virtual line and the fourth virtual line.

9. Multiple bonding marks are formed on the first and second strip-shaped portions, overlapping with either of the two conductive members. Any of the aforementioned plurality of joint marks includes a first region and a second region overlapping the first region. The semiconductor device according to claim 1, wherein the second region has an overhang located outward from the first region.

10. The semiconductor device according to claim 9, wherein, viewed in the thickness direction, the first region and the second region are surrounded by the periphery of either of the two conductive members.

11. The semiconductor device according to claim 10, wherein the area of ​​the protruding portion is smaller than the area of ​​the first region.

12. The semiconductor device according to claim 10, wherein the protruding portion is located between the first region and any of the plurality of bonding marks located adjacent to the first region in the first direction.

13. The semiconductor device according to any one of claims 1 to 12, wherein the thickness of the relay terminal is greater than the thickness of each of the two conductive members.

14. Further comprising two substrates adjacent to each other in the first direction, The two conductive members are individually arranged on the two substrates. The semiconductor device according to any one of claims 1 to 12, wherein, when viewed in the thickness direction, the connecting portion overlaps the gap provided between the two substrates.

15. The heat dissipation member is located on the opposite side of the two conductive members, with the two substrates sandwiched between them in the thickness direction, The semiconductor device according to claim 14, wherein the two substrates are supported by the heat dissipation member.

16. A first input terminal that is electrically connected to the two conductive members, It further includes a second input terminal, The semiconductor device according to claim 14, wherein the first input terminal and the second input terminal are located on one side in the first direction and are adjacent to each other in the second direction.

17. It also has output terminals, The semiconductor device according to claim 16, wherein the output terminal is located on the opposite side of the first input terminal and the second input terminal, with the two substrates in between, in the first direction.

18. A process of joining relay terminals to two adjacent conductive members in a first direction perpendicular to the thickness direction by ultrasonic vibration, The process includes joining a semiconductor element to one of the two conductive members, The relay terminal has a first strip-shaped portion and a second strip-shaped portion that extend in the first direction and are adjacent to each other in the thickness direction and in a second direction perpendicular to the first direction, and a connecting portion that is located between the first strip-shaped portion and the second strip-shaped portion in the second direction and connects the first strip-shaped portion and the second strip-shaped portion, The process of joining the relay terminals includes the steps of sequentially pressing a capillary onto the regions of the first and second strip-shaped portions that overlap the two conductive members when viewed in the thickness direction, thereby forming a plurality of first bonding marks on the first and second strip-shaped portions, and pressing the capillary onto either the first or second strip-shaped portion so as to overlap the first bonding mark that was formed first among the plurality of first bonding marks, A method for manufacturing a semiconductor device, wherein in the step of forming the second bonding mark, the capillary is pressed across the periphery of the first bonding mark.

19. The method for manufacturing a semiconductor device according to claim 18, wherein the compressive load applied to the capillary when forming the second bond mark is greater than the compressive load applied to the capillary when forming each of the plurality of first bond marks.

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