Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method

Abstract

To reduce an installation area of a substrate processing device.SOLUTION: A substrate processing device in an embodiment includes a roller that holds a plurality of vertically raised substrates arranged at predetermined intervals in a horizontal direction and rotates the substrates in a peripheral direction, first to third circulation grooves arranged along outer peripheral parts of the substrates in order from an upstream side of a rotating direction of the substrates at a lower part side of the substrates, a chemical supply part that supplies chemicals to the outer peripheral parts of the substrates passing the inside of the first circulation groove, a rinse liquid supply part that supplies rinse liquid to the outer peripheral parts of the substrates passing the inside of the second circulation groove, and a fluid supply part that supplies fluid that dries the rinse liquid to the outer peripheral parts of the substrates passing the inside of the third circulation groove.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus, a substrate processing method, and a method of manufacturing a semiconductor device.

Background Art

[0002] In the manufacturing process of semiconductor devices and the like, there is a substrate processing apparatus that processes the outer peripheral portion of a substrate with a chemical solution or the like. In such a substrate processing apparatus, it is common to hold the substrate horizontally and perform processing. However, when processing is performed while holding the substrate horizontally, it is difficult to reduce the installation area of the substrate processing apparatus.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] One embodiment aims to provide a substrate processing apparatus, a substrate processing method, and a method of manufacturing a semiconductor device capable of reducing the installation area.

Means for Solving the Problems

[0005] The substrate processing apparatus of the embodiment includes a roller that holds a plurality of vertically positioned substrates arranged horizontally at predetermined intervals and rotates the plurality of substrates in the circumferential direction; first to third flow grooves arranged along the outer periphery of the plurality of substrates in order from the upstream side in the rotation direction of the plurality of substrates on the lower side of the plurality of substrates; a chemical liquid supply unit that supplies a chemical liquid to the outer periphery of the plurality of substrates passing through the first flow groove; a rinse liquid supply unit that supplies a rinse liquid to the outer periphery of the plurality of substrates passing through the second flow groove; and a fluid supply unit that supplies a fluid to dry the rinse liquid to the outer periphery of the plurality of substrates passing through the third flow groove. [Brief explanation of the drawing]

[0006] [Figure 1] A schematic diagram showing an example of the configuration of a substrate processing apparatus according to Embodiment 1. [Figure 2] A cross-sectional view of a substrate illustrating a part of the procedure for manufacturing a semiconductor device according to Embodiment 1. [Figure 3] A schematic diagram showing an example of the configuration of a substrate processing apparatus according to a modified example 1 of Embodiment 1. [Figure 4] A schematic diagram showing an example of the configuration of a substrate processing apparatus according to a modified example 2 of Embodiment 1. [Figure 5] A schematic diagram showing an example of the configuration of a substrate processing apparatus according to a modified example 2 of Embodiment 1. [Figure 6] A schematic diagram showing an example of the configuration of a substrate processing apparatus according to a modified example 3 of Embodiment 1. [Figure 7] A schematic diagram showing an example of the configuration of a substrate processing apparatus according to a modified example 4 of Embodiment 1. [Figure 8] A schematic diagram showing an example of the configuration of a substrate processing apparatus according to modified example 5 of Embodiment 1. [Figure 9] A schematic diagram showing an example of the configuration of a substrate processing apparatus according to Embodiment 2. [Figure 10] A schematic diagram showing an example of the configuration of a nozzle and a suction nozzle included in a substrate processing apparatus according to a modified example 1 of Embodiment 2. [Figure 11]A schematic diagram showing an example of the configuration of a nozzle in a substrate processing apparatus according to a modified example 2 of Embodiment 2. [Figure 12] A schematic diagram showing an example of the configuration of multiple nozzles in a substrate processing apparatus according to a modified example 3 of Embodiment 2. [Modes for carrying out the invention]

[0007] Embodiments of the present invention will be described in detail below with reference to the drawings. However, the present invention is not limited to the embodiments described below. Furthermore, the components in the embodiments described below include those that are easily conceivable by those skilled in the art or that are substantially identical.

[0008] [Embodiment 1] Embodiment 1 will be described in detail below with reference to the drawings.

[0009] (Example of substrate processing apparatus configuration) Figure 1 is a schematic diagram showing an example of the configuration of a substrate processing apparatus 1 according to Embodiment 1. Figure 1(a) is a front view of the processing chamber of the substrate processing apparatus 1. Figures 1(b) and 1(c) are side views of the processing chamber of the substrate processing apparatus 1.

[0010] The substrate processing apparatus 1 of Embodiment 1 is configured as a semiconductor manufacturing apparatus that processes a plurality of substrates W with a chemical solution. This performs an edge-cutting process to remove predetermined films, such as insulating films or metal films (not shown), that are formed on the outer periphery of each of these substrates W.

[0011] As shown in Figure 1, the substrate processing apparatus 1 of Embodiment 1 includes rollers 11, 12, flow grooves 21, 22, 23, drive units 31, 32, 33, chemical supply unit 41, rinse liquid supply unit 42, fluid supply unit 43, film thickness gauge 50, and control unit 60.

[0012] Of these components, the rollers 11, 12, flow grooves 21, 22, 23, drive units 31, 32, 33, chemical supply unit 41, rinse liquid supply unit 42, and fluid supply unit 43 are provided for each individual substrate W.

[0013] That is, the plurality of rollers 11 and 12 are provided corresponding to the plurality of substrates W, respectively, and hold the plurality of substrates W (Wa, Wb, Wc ···) standing vertically side by side horizontally with a predetermined interval therebetween. More specifically, the plurality of substrates W are arranged side by side horizontally with the surfaces on which the predetermined films are formed facing the same direction. These substrates W are substrates of the same lot or multiple lots that are in the same manufacturing stage and have the same configuration.

[0014] For example, the predetermined rollers 11 and 12 correspond to these rollers 11 and 12 and support at least two points on the outer peripheral portion on the lower side of the substrate W standing vertically. Also, these rollers 11 and 12 are configured to be rotatable by a driving unit (not shown) and rotate the supported substrate W in the circumferential direction. The rotation speed of the substrate W can be, for example, 1000 rpm (Rotations Per Minute).

[0015] As shown in FIG. 1(a), on the lower side of the substrate W held by the rollers 11 and 12, flow grooves 21 to 23 are provided in order from the upstream side in the rotation direction of the substrate W. These flow grooves 21 to 23 are, for example, arc-shaped along the outer peripheral portion of the substrate W, with the upper part open toward the substrate W and the lower part closed. Liquids such as chemical solutions or gases such as dry air can flow in the flow grooves 21 to 23.

[0016] By arranging the flow grooves 21 to 23 along the outer peripheral portion of the substrate W from the upstream side in the rotation direction of the substrate W, the outer peripheral portion of the substrate W rotated by the rollers 11 and 12 is configured to sequentially pass through these flow grooves 21 to 23. Thereby, the outer peripheral portion of the substrate W is sequentially processed by the liquid or gas flowing in the flow grooves 21 to 23.

[0017] The first flow channel, the flow channel 21, is equipped with a chemical supply unit 41 for supplying the chemical solution. The chemical supply unit 41 circulates the chemical solution from the upstream side to the downstream side of the flow channel 21. The chemical solution that reaches the downstream end of the flow channel 21 is discharged out of the flow channel 21 from the downstream end. The chemical solution discharged from the flow channel 21 may be circulated back into the flow channel 21 and reused repeatedly.

[0018] The chemical solution supplied by the chemical solution supply unit 41 to the flow groove 21 is a removal solution for removing a predetermined film formed on the outer periphery of the substrate W. If the predetermined film is an insulating layer such as a silicon oxide layer or a silicon nitride layer, for example, hydrofluoric acid (HF aqueous solution) can be used as the chemical solution. If the predetermined film is a metal-containing layer such as a tungsten layer or a tungsten nitride layer, for example, hydrogen peroxide (H2O2 aqueous solution) or a mixture of hydrogen peroxide and an organic alkali such as choline solution can be used as the chemical solution.

[0019] The second flow channel, the flow channel 22, is provided with a rinse liquid supply unit 42 for supplying rinse liquid. The rinse liquid supply unit 42 circulates the rinse liquid from the upstream side to the downstream side of the flow channel 22. The rinse liquid that reaches the downstream end of the flow channel 22 is discharged out of the flow channel 22 from the downstream end. Here, it is preferable that the supply position of the rinse liquid be closer to the inside of the substrate W than the supply position of the chemical solution. Furthermore, the rinse liquid discharged from the flow channel 22 may be circulated back into the flow channel 22 and reused repeatedly.

[0020] The rinse liquid supplied by the rinse liquid supply unit 42 to the flow groove 22 is a liquid used to clean the outer periphery of the substrate W that has been treated with the chemical solution, and is, for example, pure water or deionized water (DIW).

[0021] The third flow channel, the flow channel 23, is equipped with a fluid supply unit 43 for supplying dry fluid. The fluid supply unit 43 circulates the dry fluid from the downstream side to the upstream side of the flow channel 23. The dry fluid that reaches the downstream end of the flow channel 23 is discharged out of the flow channel 23 from the upstream end. The dry fluid discharged from the flow channel 23 may be circulated back into the flow channel 23 for repeated use.

[0022] The drying fluid supplied by the fluid supply unit 43 to the flow groove 23 is a liquid or gas that dries the outer periphery of the substrate W that has been cleaned with the rinsing solution, and is, for example, heated dry air (N2) or isopropyl alcohol (IPA).

[0023] Furthermore, each of these flow grooves 21 to 23 is provided with a drive unit 31 to 33. These drive units 31 to 33 are configured to drive each of the flow grooves 21 to 23 in the radial direction of the substrate W.

[0024] By moving these flow grooves 21-23 radially away from the substrate W, the width of the outer periphery of the substrate W being treated with the chemical solution is narrowed. By moving these flow grooves 21-23 radially closer to the substrate W, the width of the outer periphery of the substrate W being treated with the chemical solution is widened. This is shown in Figures 1(b) and 1(c).

[0025] Figures 1(b) and 1(c) show how each individual substrate W(Wa, Wb, Wc...) is provided with rollers 11(11a, 11b, 11c...), 12(12a, 12b, 12c...), flow grooves 21(21a, 21b, 21c...), and drive units 31(31a, 31b, 31c...).

[0026] Figures 1(b) and 1(c) show representative flow grooves 21 and drive units 31 provided for each individual substrate W, among the flow grooves 21 to 23 and drive units 31 to 33. However, as described above, flow grooves 22 and 23, drive units 32 and 33, chemical supply unit 41, rinse liquid supply unit 42, and fluid supply unit 43, which are not shown in Figures 1(b) and 1(c), are also provided corresponding to each of the multiple substrates W.

[0027] In the example shown in Figure 1(b), the drive units 31, each corresponding to an individual flow groove 21, are driven radially toward the substrate W according to the control of the control unit 60. This increases the amount of immersion of the outer periphery of each substrate W into the chemical solution flowing through each flow groove 21, and the outer periphery of the substrate W is processed over a wider area.

[0028] In the example shown in Figure 1(c), the drive units 31, each corresponding to an individual flow groove 21, are driven radially away from the substrate W according to the control unit 60. This reduces the amount of submersion of the outer periphery of each substrate W into the chemical solution flowing through each flow groove 21, and the outer periphery of the substrate W is processed over a narrower width.

[0029] The film thickness gauge 50 is configured as an optical sensor that measures the film thickness of a predetermined film formed on the outer periphery of a substrate W by irradiating it with electromagnetic waves Lm, such as X-rays. Multiple substrates W are arranged with the surfaces on which the predetermined film is formed facing the same direction. With the direction in which the surfaces on which the predetermined film is formed of the multiple substrates W are facing forward, the film thickness gauge 50 irradiates the measurement point Pm on the upper outer periphery of the leading substrate W, which is standing vertically, with electromagnetic waves Lm. As a result, the film thickness gauge 50 measures the film thickness of the predetermined film formed on the outer periphery of the leading substrate W.

[0030] However, the film thickness gauge 50 can measure the film thickness at any position on the outer periphery of the substrate W as it passes through the space between the downstream end of the flow groove 23 and the upstream end of the flow groove 21. Since the outer periphery of the substrate W is dry between the flow groove 23 and the flow groove 21, the film thickness of a predetermined film can be measured with high accuracy without being obstructed by droplets of chemical solution or rinsing solution.

[0031] In other words, it is sufficient that the substrate W is dry enough to obtain sufficient accuracy in the measurement by the film thickness gauge 50. Therefore, the washing of the substrate W with the rinsing solution and drying with the drying fluid, which are performed during one rotation of the substrate W, do not need to be complete.

[0032] Furthermore, the predetermined film may be formed on the outer periphery of both the front and back surfaces of the substrate W. In this case, generally, the predetermined film on the front surface of the substrate W, that is, the surface on which the semiconductor device is mounted, is subject to chemical treatment. On the other hand, the treated film on the back surface of the substrate W, that is, the surface opposite to the surface on which the semiconductor device is mounted, may also be subject to chemical treatment. Moreover, the predetermined film on both the front and back surfaces of the substrate W may also be subject to chemical treatment.

[0033] Multiple substrates W can be held by rollers 11 and 12 with the side to be processed facing the film thickness gauge 50. Furthermore, if both the front and back surfaces of the substrate W are to be processed, the side requiring more precise processing can be positioned facing the film thickness gauge 50.

[0034] The control unit 60 is configured as a computer, for example, equipped with a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory), and controls each part of the substrate processing device 1.

[0035] In other words, the control unit 60 controls the rollers 11 and 12 to rotate the substrate W, and controls the chemical supply unit 41, the rinse liquid supply unit 42, and the fluid supply unit 43 to circulate the chemical solution, rinse liquid, and drying fluid, respectively, through the flow grooves 21 to 23, thereby processing the outer periphery of the substrate W.

[0036] Furthermore, the control unit 60 controls the film thickness gauge 50 to measure the film thickness of a predetermined film on the outer periphery of the substrate W, and performs various controls based on the measurement results. At this time, of the multiple substrates W processed at once by the substrate processing apparatus 1, only the film thickness of the first substrate W is measured by the film thickness gauge 50. However, as described above, these substrates W are substrates with the same configuration from the same manufacturing stage. Therefore, for example, the film thickness of the first substrate W can be used as representative data for these substrates W, and the various processing described below can be performed.

[0037] Specifically, the control unit 60 controls the drive units 31-33 based on the measurement results of the film thickness gauge 50 to adjust the radial position of the flow grooves 21-23 on the substrate W. More specifically, the control unit 60 adjusts the position of the flow grooves 21-23 relative to the substrate W according to the width of a predetermined film on the substrate W. Furthermore, when a predetermined film formed in a ring shape on the outer periphery of the substrate W is eccentric with respect to the center position of the substrate W, the control unit 60 appropriately changes the position of the flow grooves 21-23 relative to the substrate W each time the substrate W rotates, and changes the processing width according to the position of the outer periphery of the substrate W.

[0038] Furthermore, the control unit 60 calculates the timing at which a desired amount of the predetermined film on the outer periphery of the substrate W is removed, based on the measurement results of the film thickness gauge 50, and determines the timing for ending the substrate processing. At this time, the control unit 60 may determine the processing time before starting the processing based on the measurement results of the predetermined film thickness before chemical treatment.

[0039] Alternatively, the control unit 60 may monitor the thickness of a predetermined film during chemical treatment and terminate the processing of the substrate W when it detects, for example, that the predetermined film has been sufficiently removed. Alternatively, the control unit 60 may monitor the thickness of a predetermined film during chemical treatment and terminate the processing of the substrate W when it detects, for example, that the substrate under the predetermined film has been exposed.

[0040] (Method of manufacturing semiconductor devices) Next, an example of a method for manufacturing the semiconductor device 70 of Embodiment 1 will be described using Figure 2. Figure 2 is a cross-sectional view of a substrate W illustrating a part of the procedure for manufacturing the semiconductor device 70 according to Embodiment 1.

[0041] The semiconductor device 70 is manufactured on a substrate W through multiple processes. Therefore, depending on the manufacturing stage of the semiconductor device 70, the chemical treatment by the substrate processing apparatus 1 described above is repeated, and the type of predetermined film to be treated may vary as appropriate. Figure 2 shows the semiconductor device 70 in the process of being manufactured, and is an example where the predetermined film to be treated is a metal film.

[0042] As shown in Figure 2(a), the semiconductor device 70 comprises an insulating film 71 formed on a substrate W such as a silicon substrate, a titanium nitride film 72 formed on the insulating film 71, and a tungsten film 73 formed on the titanium nitride film 72, during the manufacturing process shown in Figure 2(a).

[0043] More specifically, the insulating film 71 is formed on the surface of the substrate W, excluding the outer periphery. Within the insulating film 71, for example, a plug having a titanium nitride film 72 as a liner and a tungsten film 73 as a core is formed. In this way, the semiconductor device 70 is manufactured, for example, within the element region ER where the insulating film 71 is formed, excluding the outer periphery of the substrate W.

[0044] The titanium nitride film 72 is also formed on the upper surface of the insulating film 71, the outer periphery of the substrate W, and the back surface of the substrate W. Here, the titanium nitride film 72 is formed, for example, by nitriding a titanium film 72b that serves as a seed film. For this reason, in the outer periphery and bevel of the substrate W, which are outside the element region ER and are not subject to various treatments, there may be cases where a titanium film 72b that has not undergone nitriding treatment remains beneath the titanium nitride film 72. Furthermore, in some cases, a portion of the remaining titanium film 72b may bond with silicon or other materials in the underlying substrate W to form a titanium silicide film 72a.

[0045] The tungsten film 73 is also formed on the surface of the substrate W, excluding the outer periphery, in a region that substantially overlaps with the region where the insulating film 71 is formed.

[0046] The titanium nitride film 72 and tungsten film 73 formed on the insulating film 71 and in the region outside the insulating film 71 are unnecessary and are therefore to be removed.

[0047] As shown in Figure 2(b), the titanium nitride film 72 and tungsten film 73 on the insulating film 71 are removed by, for example, CMP (Chemical Mechanical Polishing). However, the titanium nitride film 72 and tungsten film 73 formed in the outer region of the insulating film 71 still remain even after the CMP treatment. For this reason, for example, the outer periphery of the substrate W is treated with a chemical solution using the substrate processing apparatus 1 described above.

[0048] Specifically, multiple substrates W, which are vertically positioned, are held horizontally on multiple rollers 11 and 12 of the substrate processing apparatus 1, with a predetermined distance between them. The control unit 60 controls the multiple rollers 11 and 12 to rotate the multiple substrates W held on these rollers 11 and 12. The control unit 60 also controls the chemical supply unit 41, the rinse liquid supply unit 42, and the fluid supply unit 43 to circulate the chemical solution, rinse liquid, and drying fluid, respectively, within the flow grooves 21 to 23. At this time, as described above, the chemical solution, rinse liquid, and drying fluid may be controlled to repeatedly circulate within the flow grooves 21 to 23.

[0049] The outer periphery of multiple substrates W is sequentially immersed in the chemical solution in the flow groove 21 and the rinsing solution in the flow groove 22, and then exposed to the drying fluid in the flow groove 23. This process treats the tungsten film 73 and titanium nitride film 72, which are predetermined films formed on the outer periphery of multiple substrates W, with the chemical solution. After chemical treatment, the outer periphery of the multiple substrates W is then washed with the rinsing solution. At this time, as described above, it is preferable that the supply position of the rinsing solution is closer to the inside of the substrate W than the supply position of the chemical solution. Finally, after washing, the outer periphery of the multiple substrates W is dried with the drying fluid.

[0050] As the substrate W rotates in the circumferential direction, the tungsten film 73 and titanium nitride film 74 on the outer periphery of multiple substrates W are repeatedly treated with the chemical solution, and their film thickness gradually decreases.

[0051] On the other hand, the control unit 60 acquires measurement results from the film thickness gauge 50 at least before treatment with the chemical solution. This provides data on the film thickness of the tungsten film 73 and titanium nitride film 74 before chemical treatment. From these film thicknesses, the control unit 60 can determine the chemical treatment time for the outer periphery of the substrate W.

[0052] Alternatively, in addition to or instead of the measurement results before chemical treatment, the control unit 60 may continuously acquire measurement results from the film thickness gauge 50 during the chemical treatment and monitor the film thickness of the tungsten film 73 and the titanium nitride film 74.

[0053] In this case, the control unit 60 can terminate the chemical treatment at the point when the tungsten film 73 and titanium nitride film 74 disappear, based on their real-time film thicknesses. Alternatively, the control unit 60 may detect that the titanium film 72b, which is the underlayment for the tungsten film 73 and titanium nitride film 74, has been exposed, and terminate the chemical treatment at the point when the titanium film 72b exposure is detected.

[0054] As shown in Figure 2(c), the tungsten film 73 and titanium nitride film 74 are removed from the outer periphery of the substrate W by the above processing of the substrate processing apparatus 1.

[0055] Furthermore, it is not necessary for the substrate W to be completely washed with rinsing solution and dried with drying fluid when processing by the substrate processing apparatus 1 is completed. It is acceptable for some chemical solution or rinsing solution to remain on the substrate W, as long as at least enough chemical solution has been removed to prevent further processing of the substrate W by the chemical solution. In such cases, after the substrate W is removed from the substrate processing apparatus 1, the cleaning and drying of the substrate W may be completed using other cleaning equipment or the like.

[0056] The semiconductor device 70 of Embodiment 1 is manufactured by carrying out various processes thereafter.

[0057] (Overview) Semiconductor devices are manufactured by repeatedly performing multiple processes, including a film deposition process and an etching process. During this process, predetermined films formed outside the device area are appropriately removed to maintain the flatness of the substrate W surface and to suppress the generation of particles.

[0058] When removing a predetermined film from the outer periphery of a substrate, the substrate is typically rotated while held horizontally to supply the chemical solution to the outer periphery. This causes the chemical solution to scatter outwards as the substrate rotates, preventing it from spreading towards the center of the substrate and allowing the outer periphery to be treated to the desired width.

[0059] However, in substrate processing equipment that holds substrates horizontally, it is difficult to reduce the contact area. Furthermore, it is necessary to adopt a single-wafer configuration that processes substrates one at a time, making it difficult to implement a batch-type equipment configuration that processes multiple substrates at once. As a result, the productivity of the substrate processing equipment is reduced.

[0060] Furthermore, when removing a predetermined film from the outer periphery of the substrate, the processing time is extended beyond the target film thickness to avoid any film residue, taking into account the difference in film thickness within the substrate and between substrates. This, however, reduces the productivity of the substrate processing equipment and increases the consumption of chemicals.

[0061] According to the substrate processing apparatus 1 of Embodiment 1, a plurality of vertically positioned substrates W are rotated while being held horizontally at predetermined intervals, and a chemical solution, a rinsing solution, and a drying fluid are flowed through flow grooves 21 to 23 arranged along the outer circumference of the plurality of substrates W, starting from the upstream side in the rotational direction of the plurality of substrates W, on the lower side of the plurality of substrates W.

[0062] This reduces the installation area of ​​the substrate processing apparatus 1. Furthermore, a batch-type substrate processing apparatus 1 can be easily configured, improving productivity. Additionally, since the removal of a predetermined film using a chemical solution, cleaning of the outer periphery of the substrate W, and drying can all be performed in a single substrate processing apparatus 1, productivity can also be improved.

[0063] According to the substrate processing apparatus 1 of Embodiment 1, the direction in which the predetermined film is formed on the surface of the multiple substrates W is considered forward, and the film thickness of the predetermined film on the upper side of the leading substrate W is measured. As described above, by processing the substrates W vertically, the part of a single substrate W that is treated with the chemical solution and the dried part can be clearly separated, and the film thickness can be measured in the dried part. In addition, since the film thickness can be measured without being obstructed by water droplets or the like, the film thickness data can be obtained with high accuracy.

[0064] This allows the processing time with the chemical solution to be determined based on the thickness of a predetermined film. Therefore, the productivity of the substrate processing apparatus 1 can be improved, and the amount of chemical solution consumed can be reduced.

[0065] According to the substrate processing apparatus 1 of Embodiment 1, the flow grooves 21 to 23 are configured to change the radial position of multiple substrates W. This allows for precise control of the processing width of the outer periphery of the substrates W by changing the liquid level height of the chemical solution relative to the substrates W. Furthermore, when a predetermined ring-shaped film formed on the outer periphery of the substrate W is eccentric with respect to the center position of the substrate W, the processing width can be changed for each position on the outer periphery of the substrate W.

[0066] (Variation 1) Next, an example of the configuration of the substrate processing apparatus 1a of Modification 1 of Embodiment 1 will be described using Figure 3. The substrate processing apparatus 1a of Modification 1 differs from Embodiment 1 in that it adjusts the processing width of the outer periphery of the substrate W by changing the amount of chemical solution supplied.

[0067] Figure 3 is a schematic diagram showing an example of the configuration of a substrate processing apparatus 1a according to a modified example 1 of Embodiment 1. In Figure 3, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0068] As shown in Figure 3, the substrate processing apparatus 1a is equipped with multiple flow grooves 121 (121a, 121b, 121c...) each of which are provided with a chemical supply section 141 (141a, 141b, 141c...) corresponding to a plurality of substrates W (Wa, Wb, Wc...).

[0069] The chemical supply unit 141, provided in the flow groove 121, is configured to change the amount of chemical supplied to the flow groove 121 according to the control unit 160. The control unit 160 controls the chemical supply unit 141, for example, based on the film thickness measurement result from the film thickness gauge 50, to change the amount of chemical supplied to the flow groove 121. This changes the liquid level of the chemical in the flow groove 121, thereby adjusting the processing width of the outer periphery of the substrate W.

[0070] In other words, by reducing the amount of chemical solution supplied, the liquid level of the chemical solution in the flow groove 121 is lowered, and the processing width of the outer periphery of the substrate W can be narrowed. Conversely, by increasing the amount of chemical solution supplied, the liquid level of the chemical solution in the flow groove 121 is increased, and the processing width of the outer periphery of the substrate W can be widened.

[0071] In addition, similar to the flow channel 121, the flow channel of Modified Example 1 through which the rinse liquid flows, and the flow channel of Modified Example 1 through which the drying fluid flows, may be provided with a rinse liquid supply unit capable of changing the amount of rinse liquid supplied and a fluid supply unit capable of changing the amount of drying fluid supplied, respectively.

[0072] Furthermore, the flow grooves 121 and the flow grooves for the rinse liquid and drying fluid may be provided with drive units capable of driving them in the radial direction of the substrate W, similar to the embodiment 1 described above. In this case, the control unit 160 may adjust the processing width of the outer periphery of the substrate W by appropriately adjusting both the amount of chemical solution, rinse liquid, and drying fluid supplied to these flow grooves 121, etc., and the radial position of these flow grooves 121, etc., relative to the substrate W.

[0073] In the substrate processing apparatus 1a of the modified example 1, the chemical supply unit 141 is configured to adjust the amount of chemical supplied, thereby changing the liquid level of the chemical in the flow groove 121. This configuration also makes it possible to adjust the processing width of the outer periphery of the substrate W.

[0074] The substrate processing apparatus 1a of the modified example 1 also provides the same effects as the substrate processing apparatus 1 of the embodiment 1 described above.

[0075] (Modification 2) Next, using Figures 4 and 5, an example of the configuration of the substrate processing apparatus 1b and 1c of the modified embodiment 1 will be described. The substrate processing apparatus 1b and 1c of the modified embodiment 2 differ from the above-described embodiment 1 in that it has nozzles in the flow groove.

[0076] Figures 4 and 5 are schematic diagrams showing an example of the configuration of substrate processing apparatus 1b and 1c according to a modified example 2 of Embodiment 1. Figures 4 and 5 show enlarged views of the flow grooves 221 and 321 through which the outer periphery of one substrate W passes. In Figures 4 and 5, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0077] In the example shown in Figure 4, the substrate processing apparatus 1b of the modified example 2 includes a plurality of flow grooves 221, each provided with a chemical solution nozzle 221a, 221b for supplying a chemical solution to a plurality of substrates W. More specifically, these chemical solution nozzles 221a, 221b are provided on the inner wall surface of the flow groove 221.

[0078] In this case, it is preferable that the chemical nozzles 221a and 221b are provided on the inner wall surfaces on both sides of the flow groove 221 facing the front and back surfaces of the substrate W. This allows the predetermined film to be treated with the chemical solution, regardless of whether the predetermined film to be treated is formed on either the front or back surface of the substrate W, or on both surfaces.

[0079] Furthermore, these chemical nozzles 221a and 221b are configured to change the direction of chemical discharge, for example, by driving their tip portions vertically. In addition, each flow groove 221 is provided with drive units 231a and 231b that control these chemical nozzles 221a and 221b, respectively.

[0080] The drive units 231a and 231b, provided in the flow groove 221, change the vertical orientation of the chemical nozzles 221a and 221b according to the control unit 260, thereby changing the discharge direction of the chemical solution flowing through the flow groove 221. The control unit 260 controls the drive units 231a and 231b to change the vertical orientation of the chemical nozzles 221a and 221b, for example, based on the film thickness measurement result from the film thickness gauge 50. This makes it possible to adjust the processing width of the outer periphery of the substrate W.

[0081] In other words, by directing the chemical nozzles 221a and 221b downwards, the chemical solution is discharged closer to the edges of the substrate W, thereby narrowing the processing width of the outer periphery of the substrate W. Conversely, by directing the chemical nozzles 221a and 221b upwards, the chemical solution is discharged further inward on the substrate W, thereby widening the processing width of the outer periphery of the substrate W.

[0082] Furthermore, it is preferable that the drive units 231a and 231b can independently control the chemical nozzles 221a and 221b on the front and back surfaces of the substrate W. This allows for independent control of the discharge direction of the chemical solution by the chemical nozzles 221a and 221b, thereby making the processing width of the outer periphery of the front and back surfaces of the substrate W different.

[0083] Furthermore, similar to the flow channel 221, the flow channel of Modified Example 2 through which the rinse liquid flows, and the flow channel of Modified Example 2 through which the drying fluid flows, may be provided with a rinse liquid nozzle capable of discharging the rinse liquid and a fluid nozzle capable of discharging the drying fluid, respectively.

[0084] In the example shown in Figure 5, the substrate processing apparatus 1c of the modified example 2 includes a plurality of flow grooves 321, each of which is provided with a chemical solution nozzle 321a to 321f that supplies the chemical solution to a plurality of substrates W. More specifically, these chemical solution nozzles 321a to 321f are provided on the inner wall surface of the flow groove 321.

[0085] In this case, it is preferable that the chemical nozzles 321a to 321f are provided on the inner wall surfaces on both sides of the flow groove 321 facing the front and back surfaces of the substrate W. That is, for example, the chemical nozzles 321a to 321c are provided on the inner wall surface of the flow groove 321 facing one side of the substrate W, arranged from top to bottom. Also, the chemical nozzles 321d to 321f are provided on the inner wall surface of the flow groove 321 facing the other side of the substrate W, arranged from top to bottom.

[0086] Furthermore, each flow groove 321 is provided with a drive unit 331a for controlling the chemical nozzles 321a to 321c facing one side of the substrate W, and a drive unit 331d for controlling the chemical nozzles 321d to 321f facing the other side of the substrate W.

[0087] The drive unit 331a, provided in the flow groove 321, controls at least one of the chemical nozzles 321a to 321c according to the control unit 360, thereby changing the discharge height of the chemical solution flowing through the flow groove 321. The control unit 360 controls the drive unit 331a based, for example, the film thickness measurement result from the film thickness gauge 50, to discharge the chemical solution from at least one of the chemical nozzles 321a to 321c. This makes it possible to adjust the processing width of the outer periphery of the substrate W.

[0088] In other words, by discharging the chemical solution from the chemical solution nozzle 321c, which is located at a lower position among the chemical solution nozzles 321a to 321c, the chemical solution is discharged closer to the edge of the substrate W, thereby narrowing the processing width of the outer periphery of the substrate W. Conversely, by discharging the chemical solution from the chemical solution nozzle 321a, which is located at a higher position among the chemical solution nozzles 321a to 321c, the chemical solution is discharged further inward on the substrate W, thereby widening the processing width of the outer periphery of the substrate W.

[0089] The drive unit 331d, provided in the flow groove 321, controls at least one of the chemical nozzles 321d to 321f according to the control unit 360, thereby changing the discharge height of the chemical solution flowing through the flow groove 321. The control unit 360 controls the drive unit 331d based, for example, the film thickness measurement result from the film thickness gauge 50, to discharge the chemical solution from at least one of the chemical nozzles 321d to 321f. This makes it possible to adjust the processing width of the outer periphery of the substrate W.

[0090] In addition, similar to the flow groove 321, the flow groove of Modified Example 2 through which the rinse liquid flows, and the flow groove of Modified Example 2 through which the drying fluid flows, may be provided with a plurality of rinse liquid nozzles capable of discharging the rinse liquid from both sides of the substrate W, and a plurality of fluid nozzles capable of discharging the drying fluid from both sides of the substrate W, respectively.

[0091] Furthermore, the flow channels 221, 321, and the flow channels for the rinsing liquid and drying fluid may be provided with drive units capable of driving them radially in the substrate W, similar to Embodiment 1 described above. In this case, the control units 260, 360 may adjust both the chemical nozzles such as the flow channels 221, 321, and the radial position of the flow channels 221, 321, etc. relative to the substrate W to adjust the processing width of the outer periphery of the substrate W.

[0092] According to the substrate processing apparatus 1b of Modified Example 2, the flow groove 221 has chemical nozzles 221a and 221b provided on the inner wall of the flow groove 221, which can change the direction of chemical discharge vertically. Also, according to the substrate processing apparatus 1c of Modified Example 2, the flow groove 321 has a plurality of chemical nozzles 321a to 321f provided vertically on the inner wall of the flow groove 321. With such a configuration, the processing width of the outer periphery of the substrate W can also be adjusted.

[0093] The substrate processing apparatus 1b and 1c of the modified example 2 also provide the same effects as the substrate processing apparatus 1 of the embodiment 1 described above.

[0094] (Variation 3) Next, an example of the configuration of a substrate processing apparatus of Modification 3 of Embodiment 1 will be described using Figure 6. The substrate processing apparatus of Modification 3 differs from Embodiment 1 in the shape of the flow grooves 421a to 421c.

[0095] Figure 6 is a schematic diagram showing an example of the configuration of a substrate processing apparatus according to a modification 3 of Embodiment 1. Figure 6 shows flow grooves 421a to 421c through which the outer periphery of one substrate W passes. In Figure 6, the same reference numerals are used for components similar to those in Embodiment 1 described above, and their descriptions may be omitted.

[0096] In the example shown in Figure 6(a), the flow channel 421a of Modification 3 has a U-shaped cross-section. In the example shown in Figure 6(b), the flow channel 421b of Modification 3 has a V-shaped cross-section. In the example shown in Figure 6(c), the flow channel 421c of Modification 3 has a rectangular cross-section with an open upper end.

[0097] Thus, the flow grooves 421a to 421c may have any shape as long as they allow the chemical solution to flow through and treat the outer periphery of the substrate W. This also applies to the flow grooves for the rinse solution and the flow grooves for the drying fluid.

[0098] The substrate processing apparatus of Modification 3 provides the same effects as the substrate processing apparatus 1 of Embodiment 1 described above.

[0099] (Modification 4) Next, an example of the configuration of the substrate processing apparatus 1d of Modification 4 of Embodiment 1 will be described using Figure 7. The substrate processing apparatus 1d of Modification 4 differs from Embodiment 1 described above in that it has a flow groove 521 that is shared by multiple substrates W.

[0100] Figure 7 is a schematic diagram showing an example of the configuration of a substrate processing apparatus 1d according to a modified example 4 of Embodiment 1. In Figure 7, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0101] As shown in Figure 7, the substrate processing apparatus 1d is equipped with a wide flow groove 521 that can immerse the outer periphery of multiple substrates W arranged horizontally all at once. That is, the flow groove 521 in Modified Example 4 is shared among the multiple substrates W. Also, the chemical supply unit 541 that supplies the chemical solution to the flow groove 521 is also provided as only one unit in the flow groove 521. The control unit 560 in Modified Example 4 controls the chemical supply unit 541 to supply the chemical solution to the flow groove 521.

[0102] Furthermore, in the substrate processing apparatus 1d of the modified example 4, there is one flow channel for circulating rinse liquid, one flow channel for circulating drying fluid, and one rinse liquid supply unit and one fluid supply unit provided therein, which may be shared among multiple substrates W.

[0103] The supply amounts of the chemical solution, rinse solution, and drying fluid from these chemical solution supply unit 541, rinse solution supply unit, and fluid supply unit may be adjustable. Furthermore, the substrate processing apparatus 1d of the modified example 4 may include a drive unit that moves the flow groove 521, etc., in the radial direction of a plurality of substrates W, as in Embodiment 1.

[0104] The substrate processing apparatus of Modification 4 provides the same effects as the substrate processing apparatus 1 of Embodiment 1 described above.

[0105] In the above-described embodiment 1, rollers 11 and 12 are provided for each individual substrate W, but the rollers 11 and 12 may extend across the width of multiple substrates W arranged horizontally and be shared among multiple substrates W.

[0106] (Variation 5) Next, an example of the configuration of the substrate processing apparatus 1e of Modification 5 of Embodiment 1 will be described using Figure 8. The substrate processing apparatus 1e of Modification 5 differs from Embodiment 1 described above in that it is equipped with a plurality of flow grooves 621a, 621b for flowing the chemical solution.

[0107] Figure 8 is a schematic diagram showing an example of the configuration of a substrate processing apparatus 1e according to a modified example 5 of Embodiment 1. In Figure 8, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0108] As shown in Figure 8, the substrate processing apparatus 1e includes a plurality of flow grooves 621a and 621b, each corresponding to a plurality of substrates W. A chemical supply unit 631a for supplying chemical solution is provided in the flow groove 621a, and a chemical supply unit 631b for supplying chemical solution is provided in the flow groove 621b.

[0109] Figure 8 shows an example in which the substrate processing apparatus 1e is equipped with two flow grooves 621a and 621b, each of which is provided with a chemical supply section 641a and 641b. However, there may be three or more flow grooves 621. In this way, by increasing the number of flow grooves 621 through which the chemical solution flows, the removal speed of the predetermined film formed on the outer periphery of the substrate W per rotation can be increased.

[0110] Furthermore, multiple flow grooves for circulating rinsing fluid may be provided to increase the cleaning speed of the substrate W per rotation after treatment with the chemical solution, and to ensure more thorough cleaning of the substrate W. Additionally, multiple flow grooves for circulating drying fluid may be provided to increase the drying speed of the substrate W per rotation after cleaning, and to ensure more thorough drying of the substrate W.

[0111] Furthermore, the supply amounts of chemical solution, rinse solution, and drying fluid provided by the chemical solution supply units 641a, 641b, rinse solution supply unit, and fluid supply unit located in these flow grooves 621a, 621b, etc., may be adjustable. Also, the substrate processing apparatus 1e of Modification 5 may include a drive unit that moves the flow grooves 621a, 621b, etc., in the radial direction of a plurality of substrates W, for example, as in Embodiment 1.

[0112] According to the substrate processing apparatus of Modified Example 5, a single substrate W is provided with multiple flow grooves 621a, 621b. This makes it possible to increase the processing speed of the substrate W per rotation.

[0113] The substrate processing apparatus of Modification 5 also provides the same effects as the substrate processing apparatus 1 of Embodiment 1 described above.

[0114] [Embodiment 2] Embodiment 2 will now be described in detail with reference to the drawings. Embodiment 2 differs from Embodiment 1 described above in that the substrate processing apparatus is of a single-piece type.

[0115] In the above-described embodiment 1, the substrate processing apparatus 1 is configured in a batch type by standing the substrate W vertically. However, in cases where, for example, a more precise removal process of a predetermined film is required, a single-wafer configuration may be adopted, and the film thickness may be measured for each individual substrate W.

[0116] The following describes an example of a substrate processing apparatus that employs a single-wafer configuration.

[0117] Figure 9 is a schematic diagram showing an example of the configuration of the substrate processing apparatus 2 according to Embodiment 2. Figure 9(a) is a side view of the processing chamber of the substrate processing apparatus 2, and Figure 9(b) is a front view of the processing chamber of the substrate processing apparatus 2. Figures 9(c) and 9(d) are side views of the processing chamber of the substrate processing apparatus 2 that holds the substrate W at an angle.

[0118] In Figure 9, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions are omitted.

[0119] As shown in Figures 9(a) and 9(b), the substrate processing apparatus 2 of Embodiment 2 comprises a holding unit 711, a chemical solution tank 721, a nozzle 724, a drive unit 731, shielding plates 771 and 772, a film thickness gauge 50, and a control unit 760.

[0120] The holding part 711 attaches to and supports the back surface of the substrate W, holding the substrate W in a vertical position. The back surface of the substrate W is the surface opposite to the surface on which the semiconductor device is mounted. The holding part 711 is also configured to move the held substrate W up and down and rotate it in the circumferential direction. The rotation speed of the substrate W can be, for example, 1000 rpm.

[0121] The holding portion 711 is provided with a drive unit 731 that moves the holding portion 711 up and down and rotates it, and a pump (not shown) that uses the holding portion 711 to suck the substrate W.

[0122] A chemical tank 721 is provided on the lower side of the substrate W held by the holding part 711, containing a chemical solution for removing a predetermined film (not shown) from the substrate W. The chemical tank 721 has, for example, an inlet 721n on one of its opposing sides through which the chemical solution flows in, and an outlet 721t on the other side through which the chemical solution flows out.

[0123] While the substrate W is being processed, the chemical solution flows into the chemical tank 721 from the inlet 721n by a pump (not shown) and is discharged from the outlet 721t. This creates a flow of the chemical solution within the chemical tank 721, increasing the rate at which the predetermined film on the substrate W is removed. The chemical solution discharged from the outlet 721t may be recirculated back into the chemical tank 721 from the inlet 721n and reused repeatedly.

[0124] Shielding plates 771 and 772 are provided around the substrate W above the chemical tank 721. The shielding plates 771 and 772 are provided on one side and the other side of the substrate W, respectively, with a very small gap between them and these sides. This prevents the chemical solution stored in the chemical tank 721 from splashing onto the upper side of the substrate W. The shielding plates 771 and 772 may be integrally constructed with a slit in the center into which the substrate W is inserted.

[0125] A nozzle 724 is provided near the surface of the substrate W above these shielding plates 771, 772, on the downstream side of the substrate W in the rotational direction relative to the chemical tank 721. The nozzle 724 is connected to a rinse liquid supply source (not shown) and a drying fluid supply source, and the rinse liquid and drying fluid are sprayed from these sources onto the outer periphery of the substrate W after chemical treatment as appropriate.

[0126] Furthermore, it is preferable that the angle of the nozzle 724 relative to the substrate W is adjusted so that the rinse liquid and drying fluid are sprayed from the inside to the outside of the substrate W. By adjusting the direction in which the rinse liquid and drying fluid are sprayed in this way, the chemical solution and rinse liquid are prevented from spreading to the inside of the substrate W.

[0127] As described above, the outer periphery of the substrate W after chemical treatment is cleaned and dried by the nozzle 724. At this time, the nozzle 724 for spraying the rinsing liquid and drying fluid may be provided on the back side of the substrate W. This allows the outer periphery on the back side of the substrate W to also be cleaned and dried.

[0128] The film thickness gauge 50 measures the thickness of a predetermined film formed on the outer periphery of the substrate W by irradiating an electromagnetic wave Lm, such as X-rays, onto a measurement point Pm on the upper side of the substrate W. In the substrate processing apparatus 2 of Embodiment 2, the film thickness gauge 50 may measure the film thickness at any position on the outer periphery of the substrate W as it passes between the downstream side of the nozzle 724 and the upstream end of the chemical tank 721.

[0129] During this time, the outer periphery of the substrate W is dry, and the thickness of the predetermined film can be measured with high accuracy without being obstructed by droplets of chemical solution or rinsing solution. In other words, it is sufficient that the substrate W is dry enough to obtain sufficient accuracy in the measurement by the film thickness gauge 50.

[0130] Furthermore, if the predetermined film on the back side of the substrate W is the target of processing, or if more precise processing is required for the predetermined film on the back side, the film thickness gauge 50 may be provided at a position facing the back side of the substrate W, and capable of measuring the film thickness of the predetermined film on the back side.

[0131] The control unit 760 controls each part of the substrate processing apparatus 2, including the holding unit 711, the nozzle 724, the drive unit 731, the shielding plates 771 and 772, the film thickness gauge 50, and various pumps (not shown). At this time, the control unit 760, similar to the control unit 60 in the embodiment 1 described above, detects the processing time with the chemical solution or the end point of the chemical solution processing by various methods based on the measurement results of the film thickness gauge 50, and controls each part of the substrate processing apparatus 2 so that the desired chemical solution processing is performed, such as by controlling the amount of submersion of the substrate W into the chemical solution by the holding unit 711.

[0132] In the substrate processing apparatus 2 of Embodiment 2, some residual chemical solution or rinsing solution may remain on the substrate W after the processing of the substrate W is completed. In this case, as described in Embodiment 1 above, these processes can be completed using another cleaning apparatus or the like.

[0133] As shown in Figures 9(c) and 9(d), the substrate processing apparatus 2 of Embodiment 2 can hold the substrate W not only in a vertical position but also at an angle.

[0134] In other words, as shown in Figure 9(c), the drive unit 731 can adjust the holding angle of the substrate W by the holding unit 711 according to the control of the control unit 760, for example, and hold the substrate W in a state where it is tilted from a vertical position toward the surface side. By tilting the substrate W so that the surface side faces slightly downward, the processing width of the outer periphery on the surface side can be made wider than that on the back side, for example. In addition, it is possible to suppress the leakage of chemical solution to the back side.

[0135] Thus, when the main surface to be treated is the surface side of the substrate W, the treatment with the chemical solution can be performed with the substrate W tilted toward the surface side.

[0136] Furthermore, as shown in Figure 9(d), the drive unit 731 can adjust the holding angle of the substrate W by the holding unit 711 according to the control of the control unit 760, for example, and hold the substrate W in a state where it is tilted from a vertical position to the back side. By tilting the substrate W so that the back side faces slightly downward, the processing width of the outer periphery on the back side can be made wider than on the front side, for example. Also, it is possible to suppress the leakage of chemical solution to the front side.

[0137] Thus, when the main surface to be processed is the back side of the substrate W, the chemical treatment can be performed with the substrate W tilted towards the back side.

[0138] In the above configuration, the control unit 760 can, for example, control the drive unit 731 based on the thickness measurement result of a predetermined film by the film thickness gauge 50 to adjust the holding angle of the substrate W by the holding unit 711.

[0139] According to the substrate processing apparatus 2 of Embodiment 2, the substrate W, with a predetermined film formed on its outer periphery, is rotated in the circumferential direction while holding its back surface, so that the surface direction of the substrate W intersects the horizontal direction. One end of the substrate W is immersed in a chemical solution tank 721 containing a chemical solution, and a rinse solution and a fluid to dry the rinse solution are supplied to the outer periphery of the substrate W by a nozzle 724 downstream of the chemical solution tank 721.

[0140] This reduces the installation area of ​​the substrate processing apparatus 2. Furthermore, since the removal of a predetermined film using a chemical solution, cleaning of the outer periphery of the substrate W, and drying can be performed in a single operation, the productivity of the substrate processing apparatus 2 can be improved.

[0141] According to the substrate processing apparatus 2 of Embodiment 2, the thickness of a predetermined film on the outer periphery of the substrate W is measured by a film thickness gauge 50 downstream of the nozzle 724. By processing the substrate W in this way with the substrate W held vertically, the thickness of the predetermined film can be measured in the dry region of the substrate W, thus enabling the acquisition of highly accurate film thickness data.

[0142] This allows the processing time with the chemical solution to be determined based on the thickness of a predetermined film, thereby reducing excess processing time and improving the productivity of the substrate processing apparatus 1. Furthermore, it reduces the amount of chemical solution consumed.

[0143] According to the substrate processing apparatus 2 of Embodiment 2, the holding unit 711 is configured to hold the substrate W in a state where the substrate W is tilted from a vertical state to the back side, and in a state where the substrate W is tilted from a vertical state to the front side. This makes it possible to perform substrate processing with the front side or back side of the substrate W as the main processing surface. In addition, it is possible to suppress the leakage of the chemical solution to the side opposite to the direction in which the substrate W is tilted.

[0144] According to the substrate processing apparatus 2 of Embodiment 2, the chemical solution tank 721 has an inlet 721n through which the chemical solution flows in and an outlet 721t through which the chemical solution flows out. This allows the chemical solution to circulate within the chemical solution tank 721, thereby increasing the rate at which a predetermined film is removed from the substrate W.

[0145] The substrate processing apparatus 2 of Embodiment 2 also provides the same effects as the substrate processing apparatus 1 of Embodiment 1 described above.

[0146] (Variation 1) Next, a substrate processing apparatus of Modification 1 of Embodiment 2 will be described using Figure 10. The substrate processing apparatus of Modification 1 differs from Embodiment 2 described above in that it is equipped with a suction nozzle 725.

[0147] Figure 10 is a schematic diagram showing an example of the configuration of a nozzle 724 and a suction nozzle 725 provided in a substrate processing apparatus according to a modified example 1 of Embodiment 2. In Figure 10, components similar to those in Embodiment 2 described above are denoted by the same reference numerals, and their descriptions are omitted.

[0148] As shown in Figure 10, the substrate processing apparatus of Modification 1 is equipped with a suction nozzle 725 near the nozzle 724 that sprays rinsing liquid and drying fluid onto the substrate W. The suction nozzle 725 is connected to a pump (not shown), for example, and sucks up the rinsing liquid and drying fluid sprayed onto the substrate W from the nozzle 724, as well as any excess rinsing liquid and drying fluid discharged from the nozzle 724.

[0149] The substrate processing apparatus of Modified Example 1 is equipped with a suction nozzle 725 for sucking up rinse liquid and drying fluid. This allows for quick cleaning and drying of the substrate W by sucking up used or excess rinse liquid and drying fluid.

[0150] The substrate processing apparatus of Modified Example 1 also provides the same effects as the substrate processing apparatus 2 of Embodiment 2 described above.

[0151] (Modification 2) Next, a substrate processing apparatus of modified embodiment 2 will be described using Figure 11. The substrate processing apparatus of modified embodiment 2 differs from embodiment 2 described above in that it is equipped with contact-type nozzles 824a and 824b.

[0152] Figure 11 is a schematic diagram showing an example of the configuration of nozzles 824a and 824b provided in a substrate processing apparatus according to a modified example 2 of Embodiment 2. In Figure 11, components similar to those in Embodiment 2 described above are denoted by the same reference numerals, and their descriptions are omitted.

[0153] In the example shown in Figure 11(a), the substrate processing apparatus of Modified Example 2 includes a nozzle 824a having a plurality of needle-shaped members 824n at its tip. Such a nozzle 824a is obtained by configuring the tip of the nozzle 824a to be needle-shaped with a fine diameter, for example, 1 mm or less. These needle-shaped members 824n are preferably made of a flexible material.

[0154] In the substrate processing apparatus of Modified Example 2, the nozzle 824a sprays rinse liquid and drying fluid from the needle-shaped member 824n as needed, with the needle-shaped member 824n at its tip in contact with the bevel of the substrate W. As a result, the rinse liquid and drying fluid are supplied from the bevel of the substrate W to the outer periphery, and the outer periphery of the substrate W is cleaned and dried.

[0155] In this way, since the needle-shaped member 824n is brought into direct contact with the substrate W during processing, the cleaning and drying speeds of the substrate W are improved. Furthermore, as described above, the flexibility of the needle-shaped member 824n prevents damage to the substrate W during contact.

[0156] In the example shown in Figure 11(b), the substrate processing apparatus of Modification 2 includes a nozzle 824b having a sponge-like member 824s at its tip. Such a nozzle 824b can be obtained by providing, for example, a sponge-like molded resin or the like at the tip of the nozzle 824b.

[0157] In the substrate processing apparatus of Modified Example 2, the nozzle 824b, with its tip-shaped sponge member 824s in contact with the bevel of the substrate W, appropriately impregnates the sponge member 824s with rinsing liquid and drying fluid. As a result, these rinsing liquid and drying fluid seep out from the sponge member 824s and are supplied to the outer periphery of the substrate W, cleaning and drying the outer periphery of the substrate W.

[0158] In this way, since the needle-shaped member 824n is brought into direct contact with the substrate W for processing, the cleaning speed and drying speed of the substrate W are improved. Furthermore, by having a sponge-like member 824s at the tip, damage to the substrate W during contact is suppressed.

[0159] According to the substrate processing apparatus of Modified Example 2, the nozzles 824a and 824b have a needle-shaped member 824n or a sponge-like member 824s at their tip that contacts the substrate W. This allows for quick cleaning and drying of the substrate W.

[0160] The substrate processing apparatus of Modified Example 2 also provides the same effects as the substrate processing apparatus 2 of Embodiment 2 described above.

[0161] (Variation 3) Next, a substrate processing apparatus 2c of modified embodiment 2, part 3, will be described using Figure 12. The substrate processing apparatus 2c of modified embodiment 3 differs from that of embodiment 2 described above in that it is equipped with multiple nozzles.

[0162] Figure 12 is a schematic diagram showing an example of the configuration of multiple nozzles in a substrate processing apparatus according to a modified example 3 of Embodiment 2. Figure 12(a) is a side view of the processing chamber of the substrate processing apparatus 2c, and Figure 12(b) is a front view of the processing chamber of the substrate processing apparatus 2c. In Figure 12, components similar to those in Embodiment 2 described above are denoted by the same reference numerals, and their descriptions are omitted.

[0163] As shown in Figure 12, the substrate processing apparatus 2c of the modified example 3 includes a rinse liquid nozzle 922 and a fluid nozzle 923 that independently spray rinse liquid and drying fluid onto the substrate W, respectively. In addition to these, the suction nozzle 725 of the modified example 1 described above may be provided in their vicinity. Alternatively, the suction nozzle 725 may be provided in close proximity to each of the individual rinse liquid nozzles 922 and fluid nozzles 923.

[0164] According to the substrate processing apparatus 2c of Modified Example 3, the nozzles provided in the substrate processing apparatus 2c include a rinsing liquid nozzle 922 for supplying rinsing liquid to the outer periphery of the substrate W, and a fluid nozzle 923 for supplying drying fluid to the outer periphery of the substrate W. By making the rinsing liquid nozzle 922 and the fluid nozzle 923 independent in this way, the substrate W can be cleaned and dried more precisely.

[0165] In addition, the substrate processing apparatus 2c of Modification 3 may be equipped with a chemical nozzle for spraying the chemical solution onto the substrate W instead of the chemical solution tank 721. Furthermore, a suction nozzle for aspirating the chemical solution may be provided near the chemical solution nozzle. This allows for the elimination of the chemical solution tank 721, making the substrate processing apparatus 2c more compact.

[0166] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0167] 1, 1a~1e, 2, 2c... Substrate processing equipment, 11, 12... Rollers, 21, 22, 23, 121, 221, 321, 421a~421c, 521, 621a, 621b... Flow groove, 31, 32, 33, 231, 331... Drive unit. 41, 141, 541, 641a, 641b... Chemical supply unit, 42... Rinse liquid supply unit, 43... Fluid supply unit, 50... Film thickness gauge, 60, 160~360, 560, 760... Control unit, 70... Semiconductor device, 72... Titanium nitride film, 73... Tungsten film, 221a, 221b, 321a~321c... Chemical nozzle, 711... Holding unit, 721... Chemical tank, 731... Drive unit, 724, 725, 824a, 824b... Nozzles, 922... Rinse liquid nozzle, 923... Fluid nozzle, W... Substrate.

Claims

1. Multiple vertically positioned substrates are arranged horizontally at predetermined intervals and held in place by a roller that rotates the multiple substrates in the circumferential direction. On the lower side of the plurality of substrates, first to third flow grooves are arranged along the outer periphery of the plurality of substrates, in order from the upstream side in the rotational direction of the plurality of substrates, A chemical supply unit that supplies chemical solution to the outer periphery of the plurality of substrates passing through the first flow groove, A rinse liquid supply unit that supplies rinse liquid to the outer periphery of the plurality of substrates passing through the second flow groove, The device includes a fluid supply unit that supplies a fluid for drying the rinse liquid to the outer periphery of the plurality of substrates passing through the third flow groove, Circuit board processing equipment.

2. The first to third flow grooves are, Each of the aforementioned plurality of substrates is arranged in accordance with the following: The substrate processing apparatus according to claim 1.

3. The first to third flow grooves are, The plurality of substrates are configured to allow the radial position of the plurality of substrates to be changed. The substrate processing apparatus according to claim 1.

4. The first flow channel is The first flow groove has a liquid chemical nozzle provided on its inner wall, which can change the discharge direction of the liquid chemical vertically. The substrate processing apparatus according to claim 1.

5. The first flow channel is The first flow groove has a plurality of liquid chemical nozzles arranged vertically on its inner wall, The substrate processing apparatus according to claim 1.

6. Multiple substrates are rotated circumferentially by a roller, and multiple vertically positioned substrates are held horizontally at predetermined intervals. On the lower side of the plurality of substrates, the plurality of substrates are rotated by the roller so that the outer periphery of the plurality of substrates passes through first to third flow grooves arranged along the outer periphery of the plurality of substrates, starting from the upstream side in the rotational direction of the plurality of substrates. While rotating the aforementioned multiple substrates, A chemical solution is supplied to the outer periphery of the plurality of substrates passing through the first flow groove, Rinsing liquid is supplied to the outer periphery of the plurality of substrates passing through the second flow groove, A fluid for drying the rinse liquid is supplied to the outer periphery of the plurality of substrates passing through the third flow groove. Substrate processing method.

7. Multiple substrates, each with a predetermined film formed on its outer circumference, are rotated circumferentially by a roller. Multiple vertically positioned substrates are then arranged horizontally at predetermined intervals and held in place. On the lower side of the plurality of substrates, the plurality of substrates are rotated by the roller so that the outer periphery of the plurality of substrates passes through first to third flow grooves arranged along the outer periphery of the plurality of substrates, starting from the upstream side in the rotational direction of the plurality of substrates. While rotating the aforementioned multiple substrates, A chemical solution for removing the predetermined film is supplied to the outer periphery of the plurality of substrates passing through the first flow groove. Rinsing liquid is supplied to the outer periphery of the plurality of substrates passing through the second flow groove, A fluid for drying the rinse liquid is supplied to the outer periphery of the plurality of substrates passing through the third flow groove. A method for manufacturing a semiconductor device.

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