Semiconductor module

Abstract

To provide a semiconductor module that can solve a heat radiation problem and realizes a structure of a simple electric circuit.SOLUTION: A semiconductor module comprises: a semiconductor device 8 that has a first electrode and a second electrode; a lead electrode 4 that is a first external electrode which is connected to the first electrode; a conductive heat radiation fin 2 that is a second external electrode which is connected to the second electrode; and a non-conductive case 9 that has a hole through which the lead electrode penetrates. The semiconductor device and the lead electrode are wedged between the case and the heat radiation fin to be stored, a space between the second electrode and the heat radiation fin of the semiconductor device and a space between the first electrode and the lead electrode of the semiconductor device are electrically connected to each other, and the semiconductor device, the lead electrode, the heat radiation fin and the case are crimped and fixed.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor module.

Background Art

[0002] For example, when assembling a rectifying element used in an alternator, first, as a primary molded body, it is configured using a plurality of members such as a power semiconductor chip, a control IC, a capacitor, a conductive adhesive, and primary solder. Then, the rectifying element used in the alternator may be manufactured by using secondary solder for the lead and the disk with the primary molded body thus manufactured. In addition, after the primary molded body is configured, instead of joining using a disk and secondary solder, there is a method of press-fitting the primary molded body into a heat dissipation fin. Regarding the technology of press-fitting this primary molded body into a heat dissipation fin, for example, there are Patent Document 1 and Patent Document 2.

[0003] In the [Summary] of Patent Document 1, it is described that "[Problem] To provide a double-sided cooling semiconductor module configured to have good cooling of a semiconductor chip. [Solution] The semiconductor module 100 has a fixed cooler 2 and a displacement cooler 3 respectively arranged above and below a flat semiconductor package 1. The relative position between the semiconductor package 1 and the fixed cooler 2 is fixed. The relative position of the displacement cooler 3 with respect to the semiconductor package 1 can be changed. The displacement cooler 3 includes a displacer 31 made of a metal thin plate covering a refrigerant storage chamber 3a. Further, the semiconductor module 100 includes a pressing mechanism 20 that presses the fixed cooler 2 toward the displacement cooler 3. When the adjustment screws 201 and 202 of the pressing mechanism 20 are tightened, the pressing frame 203 approaches the cooler body 32 of the displacement cooler 3. As a result, the semiconductor package 1 is pressed through the fixed cooler 2, and the displacer 31 is slightly displaced to improve the adhesion between the semiconductor package 1 and the insulating material 17 and the adhesion between the insulating material 17 and the displacer 31." The technology of a double-sided cooling type semiconductor module is disclosed. And in this technology, there is a description about heat dissipation using a pressing frame.

[0004] Furthermore, the abstract of Patent Document 2 states, "[Problem] To provide a power semiconductor device that offers excellent practicality due to a wide range of heat sink material options and ease of manufacturing, and is also highly recyclable, while still achieving excellent heat dissipation characteristics. [Solution] A semiconductor module 100, in which metal heat sinks are arranged on both sides with a power semiconductor element chip in between, is placed on a heat sink 110, and a biasing holding member 112 biases the metal heat sink on the non-heat sink side of the semiconductor module 100, pressing the metal heat sink on the heat sink side of the semiconductor module 100 against the surface of the heat sink 110." Thus, a technology for a power semiconductor device is disclosed. In this technology, it is stated that soldering is unnecessary due to the use of a fixing member, and that the fixing member may be an insulating material such as resin. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2004-296589 [Patent Document 2] Japanese Patent Publication No. 2002-083915 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] However, the aforementioned Patent Documents 1 and 2 describe structures intended solely for thermal connection with a heat sink, and do not describe electrical connections using the heat sink as an electrical path. Furthermore, there is no disclosure regarding, for example, holes through which lead electrodes pass in non-conductive cases. Therefore, there is a challenge (problem) in how to simply and concretely configure the electrical circuit when using a heat sink or a non-conductive case.

[0007] The present invention was devised in view of the aforementioned problems, and aims to provide a semiconductor module that solves the problem of heat dissipation and achieves a simple electrical circuit structure by pressing the second electrode of the semiconductor device onto a conductive heat sink fin. [Means for solving the problem]

[0008] In order to solve the aforementioned problems and achieve the objectives of the present invention, the device was configured as follows. In other words, the semiconductor module of the present invention comprises a semiconductor device having a first electrode and a second electrode, a lead electrode which is a first external electrode connected to the first electrode, and a second external electrode connected to the second electrode. It is used in alternators. The semiconductor device comprises a conductive heat dissipation fin and a non-conductive case having a hole through which the lead electrode passes, wherein the semiconductor device and the lead electrode are housed sandwiched between the case and the heat dissipation fin, and the second electrode of the semiconductor device and the heat dissipation fin, and the first electrode of the semiconductor device and the lead electrode are electrically connected, and the semiconductor device, the lead electrode, the heat dissipation fin, and the case are crimped and fixed together. Other means will be described within the descriptions of embodiments for carrying out the invention. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a semiconductor module that solves the problem of heat dissipation and achieves a simple electrical circuit structure. [Brief explanation of the drawing]

[0010] [Figure 1] This figure schematically shows an example of a cross-sectional structure of a semiconductor module according to the first embodiment of the present invention. [Figure 2] This figure schematically shows an example of an exploded cross-sectional structural diagram illustrating the structure of a semiconductor module according to the first embodiment of the present invention. [Figure 3A] This figure shows an example of the overall view of the case surface of a semiconductor module according to the first embodiment of the present invention. [Figure 3B] This figure shows an example of the overall view of the back surface of a semiconductor module case according to the first embodiment of the present invention. [Figure 3C] This figure shows an example of an overview of the side view of the case of a semiconductor module according to the first embodiment of the present invention. [Figure 4] This figure shows an example of the configuration of a semiconductor device of a semiconductor module according to the first embodiment of the present invention. [Figure 5] This is a side view of a plurality of semiconductor modules, showing an example in which a plurality of semiconductor modules according to the first embodiment of the present invention are connected together. [Figure 6] This is a top view of the heat dissipation fins of a plurality of semiconductor modules, showing an example in which a plurality of semiconductor modules according to the first embodiment of the present invention are connected together. [Figure 7] This is a top view of a plurality of semiconductor modules, showing an example in which a plurality of semiconductor modules according to the first embodiment of the present invention are connected together. [Figure 8A] This figure shows the cross-sectional structure of the X section in Figure 7, where multiple semiconductor modules of the present invention are connected together. [Figure 8B] This figure shows the cross-sectional structure of the Y section in Figure 7, where multiple semiconductor modules of the present invention are connected together. [Figure 9A] This figure schematically shows an example of the cross-sectional structure of a semiconductor module configured as a P-pole structure in a seiza position according to the first embodiment of the present invention. [Figure 9B] This figure schematically shows an example of the cross-sectional structure of a semiconductor module configured as an inverted N-pole structure according to the first embodiment of the present invention. [Figure 10] This figure schematically shows an example of a disassembled cross-sectional structure of a semiconductor module according to a second embodiment of the present invention. [Figure 11A] This figure shows an example of the case surface of a semiconductor module according to a second embodiment of the present invention. [Figure 11B]It is a figure showing an example of the back surface of the case of the semiconductor module according to the second embodiment of the present invention. [Figure 11C] It is a figure showing an example of the side surface of the case of the semiconductor module according to the second embodiment of the present invention. [Figure 12] It is a figure seen from the side of a plurality of semiconductor modules showing an example in which a plurality of semiconductor modules according to the second embodiment of the present invention are connected and configured. [Figure 13] It is a figure seen from above the heat dissipation fins of a plurality of semiconductor modules showing an example in which a plurality of semiconductor modules 102 according to the second embodiment of the present invention are connected and configured. [Figure 14] It is a figure seen from above a plurality of semiconductor modules showing an example in which a plurality of semiconductor modules according to the second embodiment of the present invention are connected and configured. [Figure 15A] It is a figure showing the cross-sectional structure of the X cross-section in FIG. 14 in which a plurality of semiconductor modules according to the second embodiment of the present invention are connected and configured. [Figure 15B] It is a figure showing the cross-sectional structure of the Y cross-section in FIG. 14 in which a plurality of semiconductor modules according to the second embodiment of the present invention are connected and configured. [Figure 16A] It is a figure schematically showing an example of the cross-sectional structure of a semiconductor module configured as a P-pole structure in the upright position according to the second embodiment of the present invention. [Figure 16B] It is a figure schematically showing an example of the cross-sectional structure of a semiconductor module configured as an N-pole structure in the inverted position according to the second embodiment of the present invention. [Figure 17] It is a figure schematically showing an example of the disassembled cross-sectional structure of the semiconductor module according to the third embodiment of the present invention. [Figure 18A] It is a figure showing an example of the surface of the case of the semiconductor module according to the third embodiment of the present invention. [Figure 18B] It is a figure showing an example of the back surface of the case of the semiconductor module according to the third embodiment of the present invention. [Figure 19]This is a top view of the heat dissipation fins of a plurality of semiconductor modules, showing an example in which a plurality of semiconductor modules according to the third embodiment of the present invention are connected together. [Figure 20] This is a top view of a plurality of semiconductor modules, showing an example in which a plurality of semiconductor modules according to the third embodiment of the present invention are connected together. [Figure 21A] This figure shows an example of a cross-sectional structure in the X section of Figure 20, which is configured by connecting multiple semiconductor modules according to the third embodiment of the present invention. [Figure 21B] This figure shows an example of a cross-sectional structure in the Y section of Figure 20, which is configured by connecting multiple semiconductor modules according to the third embodiment of the present invention. [Figure 22A] This figure schematically shows an example of the cross-sectional structure of a semiconductor module configured as a P-pole structure in a seiza position according to the third embodiment of the present invention. [Figure 22B] This figure schematically shows an example of the cross-sectional structure of a semiconductor module configured as an inverted N-pole structure according to the third embodiment of the present invention. [Figure 23] This figure schematically shows an example of a disassembled cross-sectional structure of a semiconductor module according to a fourth embodiment of the present invention. [Figure 24A] This figure shows an example of the case surface of a semiconductor module according to the fourth embodiment of the present invention. [Figure 24B] This figure shows an example of the back surface of a semiconductor module case according to the fourth embodiment of the present invention. [Figure 25] This is a top view of the heat dissipation fins of a plurality of semiconductor modules, showing an example in which a plurality of semiconductor modules according to the fourth embodiment of the present invention are connected together. [Figure 26] This is a top view of a plurality of semiconductor modules, showing an example in which a plurality of semiconductor modules according to the fourth embodiment of the present invention are connected together. [Figure 27A]This figure shows an example of a cross-sectional structure in the X section of Figure 26, in which multiple semiconductor modules according to the fourth embodiment of the present invention are connected together. [Figure 27B] This figure shows an example of a cross-sectional structure in the Y section of Figure 26, in which multiple semiconductor modules according to the fourth embodiment of the present invention are connected together. [Figure 28A] This figure schematically shows an example of the cross-sectional structure of a semiconductor module configured as a P-pole structure in a seiza position according to the fourth embodiment of the present invention. [Figure 28B] This figure schematically shows an example of the cross-sectional structure of a semiconductor module configured as an inverted N-pole structure according to the fourth embodiment of the present invention. [Modes for carrying out the invention]

[0011] Hereinafter, embodiments for carrying out the present invention (hereinafter referred to as "embodiments") will be described with reference to the drawings as appropriate. In the figures illustrating the embodiments, components with the same function are denoted by the same reference numerals, and repeated explanations will be omitted as appropriate. Furthermore, in the following descriptions of embodiments, explanations of identical or similar parts will not be repeated unless specifically necessary, and will be omitted as appropriate. Furthermore, the drawings referenced in the following description are schematic representations of the embodiments, and therefore the scale, spacing, and positional relationships of each component may be exaggerated, or some components may be omitted from the illustration.

[0012] ≪First Embodiment≫ The configuration of a semiconductor module according to the first embodiment of the present invention will be described with reference to Figures 1, 2, and other related figures.

[0013] <Semiconductor module configuration and disassembled cross-sectional structure> Figure 1 is a schematic diagram showing an example of the cross-sectional structure of a semiconductor module 101 according to the first embodiment of the present invention.

[0014] In Figure 1, the semiconductor module 101 is configured to include, for example, a semiconductor device 8 made of a primary molded body, lead electrodes 4 (first external electrodes), a non-conductive case 9, and conductive heat dissipation fins 2 (second external electrodes). Case 9 is non-conductive and protects and insulates the semiconductor device 8. Case 9 and the heat sink fin 2 are crimped and secured together by screws 7. Furthermore, no solder is used between the heat dissipation fin 2 and the semiconductor device 8, nor between the lead electrode 4 and the semiconductor device 8.

[0015] The semiconductor device 8 is equipped with semiconductor elements and is configured, for example, as a rectifier element. Power to the semiconductor device 8 is supplied via lead electrodes 4 and conductive heat dissipation fins 2. A specific example of the circuit configuration of the semiconductor device 8 will be described later with reference to Figure 4. The semiconductor device 8 and lead electrodes 4 are fixed between the case 9 and the heat sink fins 2 by case crimping. As will be described later, the process of housing the semiconductor device 8 and lead electrodes 4 between the case 9 and the heat sink fins 2 and fixing them by crimping with screws 7, or bolts 7a and nuts 7b, will be referred to as "case crimping." Furthermore, the process of crimping and fixing will be referred to as "crimping and fixing" or "crimping and fixing" as appropriate. Furthermore, the heat generated in the semiconductor device 8 is propagated and dissipated by the heat dissipation fins 2.

[0016] Figure 2 is a schematic diagram illustrating an example of an exploded cross-sectional structure diagram of a semiconductor module 101R according to the first embodiment of the present invention, in order to make the structure of the semiconductor module 101 shown in Figure 1 easier to understand, by disassembling it into semiconductor device 8, lead electrode 4, case 9, and heat dissipation fin 2. Note that in Figure 2, the semiconductor module 101 is shown in a disassembled state, and is therefore labeled as semiconductor module 101R (semiconductor module with disassembled cross-sectional structure). Furthermore, Figure 2 shows a cross-section of the semiconductor module (101, 101R) in the XX axis direction of Figure 7, which will be described later.

[0017] In Figure 2, the semiconductor device 8 and lead electrodes 4 are housed in the partial space formed by the case 9 and the heat dissipation fins 2, as shown in Figure 1. The case 9 has a hole through which the upper end of the lead electrode 4 passes. Furthermore, screws 7 and screw holes 7d are used to connect the case 9 and the heat sink fin 2, respectively. Furthermore, in order to enhance the stability of the connection between the case 9 and the heat dissipation fins 2, and for alignment purposes, the case 9 is provided with case protrusions 9p and case recesses 9h. In addition, the heat dissipation fins 2 are provided with heat dissipation fin recesses 2h and heat dissipation fin protrusions 2p at locations corresponding to the protrusions and recesses of the case 9.

[0018] Then, the case protrusion 9p and the heat sink fin recess 2h are aligned, and the case recess 9h and the heat sink fin protrusion 2p are aligned, and the case 9 and the heat sink fin 2 are joined by the connection of these protrusions and recesses. Furthermore, the semiconductor module 101 is joined and crimped together by the connection of the screw 7 and screw hole 7d as described above, as shown in Figure 1, and the assembly is completed.

[0019] In Figures 1 and 2 above, in the heat dissipation fin 2 or case 9, there are places where lines indicating boundaries are shown in the cross-sectional view, even though the shape should actually be continuous without boundaries. These lines are included for convenience to aid in understanding the structure in Figures 1 and 2.

[0020] Furthermore, the cross-sectional diagrams of the semiconductor modules (101, 101R) shown in Figures 1 and 2 above may be insufficient to understand the overall configuration of the semiconductor module. In practice, multiple semiconductor modules 101 are sometimes used in conjunction with each other. Therefore, the structure of Case 9 is shown next, including the front view, back view, and side view of the case. Furthermore, a specific example of the configuration of the semiconductor device 8 is shown. Then, the completed side view, top view of the heat dissipation fins, top view of the completed semiconductor module, X-section, Y-section, P-pole structure cross-section, and N-pole structure cross-section of the semiconductor module with multiple connected components, including the heat dissipation fins 2, are explained in order.

[0021] <Case Structure> The overall structure of Case 9 will be explained in more detail with reference to Figures 3A, 3B, and 3C. Figure 3A is a diagram (case surface view) showing an example of an overview of the case surface of case 9 of the semiconductor module 101 according to the first embodiment of the present invention. In Figure 3A, there is a lead electrode through-hole 4a in the center of the surface of case 9 through which the lead electrode 4 passes. Also, a screw 7 (head) is indicated to the left of the lead electrode through-hole 4a in the horizontal direction. Note that the tip of the screw is located at the bottom of the surface of case 9 on the right side, but it is hidden and therefore not indicated.

[0022] Figure 3B is a diagram (rear view of the case) showing an example of an overview of the back surface of the case 9 of the semiconductor module 101 according to the first embodiment of the present invention. In Figure 3B, there is a lead electrode through-hole 4a in the center of the back surface of case 9 through which the lead electrode 4 passes. Screw holes 7d are also indicated on both sides of the lead electrode through-hole 4a in the lateral direction. In addition, the case protrusion 9p, which is a protruding part of case 9, is indicated. Furthermore, in order to house the semiconductor device 8 and lead electrodes 4 between the case 9 and the heat dissipation fins 2, the case 9 has a different shape in its central and side sections. In Figure 3B, both sides of case 9 are depicted reflecting the structure of both sides of case 9 as shown in Figure 2. Furthermore, as mentioned above, the shape of case 9 differs between the central and side sections. Also, the case protrusion 9p shown in Figure 2 is depicted on the right side of Figure 3B.

[0023] Figure 3C is a diagram (side view of the case) showing an example of an overview of the side of the case of case 9 of the semiconductor module 101 according to the first embodiment of the present invention. In Figure 3C, the shape of the side of case 9 is shown not only in the shape of the central part as shown in the cross-sectional view of Figure 2, but also in addition to the shape of case 9 on the side. This side of case 9 covers the semiconductor device 8 and lead electrode 4 in Figure 1 from the side. Furthermore, in Figure 3C, the protruding part of case 9, which is case protrusion 9p, is indicated.

[0024] Further details of the structure of Case 9 will be described later, referring to Figures 5, 7, 8A, and 8B.

[0025] <Structure of semiconductor device 8> Next, we will describe an example configuration of the semiconductor device 8. Figure 4 shows an example of the configuration of the semiconductor device 8 of the semiconductor module 101 according to the first embodiment of the present invention. In Figure 4, the semiconductor device 8, which is the primary molded body, is composed of a lead frame 15A (second electrode), a lead frame 15B, a power semiconductor chip 10, a source lead 14 (first electrode), a control IC 13, and a capacitor 16. Primary solder 11, conductive bonding material 12, bonding wire 17, and sealing resin 18 are also used.

[0026] The power semiconductor chip 10 is, for example, a power MOSFET chip using a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). The power semiconductor chip 10 has two main surfaces. A predetermined electrode (first electrode) on the first surface (upper surface in the view of the paper) of the power semiconductor chip 10 is connected to the second surface (lower surface in the view of the paper) of the source lead 14 (first electrode) via primary solder 11. The first surface (upper surface in the view of the paper) of the source lead 14 is connected to the lead electrode 4 (Figure 1). Furthermore, a predetermined electrode (second electrode) on the second surface (the lower surface in the view of the paper) of the power semiconductor chip 10 is connected to and mounted on the first surface (the upper surface in the view of the paper) of the lead frame 15A (the second electrode) via primary solder 11. Thus, the second electrode of the power semiconductor chip 10 and the lead electrode 4 are electrically connected via the conductor source lead 14.

[0027] The control IC 13 and capacitor 16 are mounted on the lead frame 15B via a conductive bonding material 12. Furthermore, several terminals of the control IC 13, separate from the aforementioned terminals, are connected to predetermined terminals of the power semiconductor chip 10 via bonding wires 17. Through this connection, the electrical characteristics of the power semiconductor chip 10 are controlled by the control IC 13.

[0028] Furthermore, the second surface of the lead frame 15A (the lower surface in the paper view) is mechanically and electrically joined to the heat dissipation fin 2 (Figure 1). In other words, the second surface of the lead frame 15A and the heat dissipation fin 2 are electrically and mechanically connected without the use of solder.

[0029] With the above configuration, the semiconductor module 101 comprises a heat dissipation fin 2, a semiconductor device 8 which is a primary molded body, and lead electrodes 4, and constitutes a rectifier element (rectifier) ​​having, for example, a first terminal and a second terminal. The circuit is formed by the power semiconductor chip 10, control IC 13, and capacitor 16, which are provided on the semiconductor device 8, which is the primary molded body. Voltage (power) is supplied to the circuit formed by the semiconductor device 8 from the lead frame 15A connected to the heat sink fin 2 and the lead frame 15B connected to the lead electrode 4.

[0030] <Configuration when multiple semiconductor modules 101 are connected> Next, we will explain the configuration when multiple semiconductor modules 101 are connected together. In addition, cases in which multiple semiconductor modules 101 are used include improving the current capacity of the rectifier element (rectifier) ​​or configuring a circuit that converts single-phase AC or three-phase AC to DC using multiple rectifier elements.

[0031] <Completed side view of multiple interconnected semiconductor modules> Figure 5 is a side view (completed side view) of a plurality of semiconductor modules after completion, showing an example in which a plurality of semiconductor modules 101 according to the first embodiment of the present invention are connected together. In Figure 5, multiple (3) semiconductor modules 101 are arranged and connected side by side. Similarly, multiple (3) cases 9 are arranged and connected side by side. Lead electrodes 4 extend from the center of each case 9 to the outside of the semiconductor module 101. Note that the heat dissipation fins 2 of multiple (3) semiconductor modules 101 are shared and shown as a single heat dissipation fin 2.

[0032] <Top view of the heat sink fins of multiple interconnected semiconductor modules> Figure 6 is a view from above the heat dissipation fins of a plurality of semiconductor modules, showing an example in which a plurality of semiconductor modules 101 according to the first embodiment of the present invention are connected together (top view of the heat dissipation fins). In Figure 6, multiple (3) semiconductor modules 101 are arranged and connected side by side. Additionally, multiple (3) primary molded semiconductor devices 8 are arranged side by side. Furthermore, multiple screw holes 7d are arranged in a row. After the semiconductor module 101 is completed, screws 7 are inserted into the screw holes 7d and fitted into place.

[0033] Furthermore, the heat dissipation fin 2 is not formed flat, but rather has grooves with irregularities. Specifically, as shown in Figure 2, the central and right portions are lower than the left portion of the semiconductor module 101 in the view on the paper. In Figure 6, this low-profile portion is shown as the heat dissipation fin bottom 2d. The semiconductor device 8 is positioned on this heat dissipation fin bottom 2d. Furthermore, lead electrodes 4 emerge from the center of each semiconductor device 8, passing through the lead electrode through-holes 4a of the unmarked case 9. Note that the heat dissipation fins 2 of multiple (3) semiconductor modules 101 are shared and shown as a single heat dissipation fin 2.

[0034] <Top view of the completed plurality of connected semiconductor modules> FIG. 7 is a top view (completed top view) of a plurality of semiconductor modules 101 according to the first embodiment of the present invention, showing an example in which a plurality of semiconductor modules are connected. In FIG. 7, a plurality (three) of semiconductor modules 101 are arranged and connected. Also, a plurality (three) of cases 9 are arranged and connected. Further, lead electrodes 4 extend from the center of each case 9.

[0035] Also, a screw 7 (head) is shown on the left side in the lateral direction of the lead electrode 4 in the plane of the paper. Although the tip of the screw is below the surface of the right case 9, it is hidden by the case 9 and thus not shown. Note that the heat dissipation fins 2 of the plurality (three) of semiconductor modules 101 are shared and shown as one heat dissipation fin 2. Also, the width of the heat dissipation fin 2 (in the vertical direction in the plane of the paper) is larger than the width of the case 9 (in the vertical direction in the plane of the paper). That is, a plurality (three) of semiconductor modules 101 are arranged and crimped on the relatively large heat dissipation fin 2.

[0036] In FIG. 7, the cross section along the X-X axis is shown as an X cross-sectional view in FIG. 8A. Also, in FIG. 7, the cross section along the Y-Y axis is shown as a Y cross-sectional view in FIG. 8B. <The

[0037] <X cross-sectional view and Y cross-sectional view> In FIGS. 8A and 8B, the cross-sectional structures of the X cross-section and Y cross-section shown in FIG. 7 are shown below.

[0038] 《X cross-sectional view》 FIG. 8A is a diagram (X cross-sectional view) showing the cross-sectional structure of the X cross-section in FIG. 7 in which a plurality of semiconductor modules 101 of the present invention are connected. In FIG. 8A, in each one semiconductor module 101, the semiconductor device 8 and the lead electrode 4 are housed in the space formed by the case 9 and the heat dissipation fin 2, and the case 9, the heat dissipation fin 2, the semiconductor device 8, and the lead electrode 4 are crimped and fixed by the screw 7. And a plurality (three) of semiconductor modules 101 are connected and configured.

[0039] 《Y Cross - sectional View》 FIG. 8B is a diagram (Y cross - sectional view) showing the cross - sectional structure of the Y cross - section in FIG. 7 in which a plurality of semiconductor modules 101 of the present invention are connected and configured. In FIG. 8B, it is shown that in the semiconductor module 101, the semiconductor device 8 and the lead electrode 4 are housed in the space formed by the case 9 and the heat dissipation fin 2. In the Y - Y direction, the heat dissipation fin 2 and the case 9 are configured symmetrically in the left - right direction in the view of the paper surface.

[0040] In FIGS. 8A and 8B above, in the heat dissipation fin 2 or the case 9, as a cross - sectional view, there are places where a "line" indicating a boundary is shown at a place where it should originally be a continuous shape without a boundary. The reason is that, as described above, these "lines" are shown for convenience as an aid to understanding the structure in FIGS. 8A and 8B. Also, in FIG. 8A, the plurality (three) of heat dissipation fins 2 are connected as a common heat dissipation fin, but for the plurality (three) of cases 9, they may be independent of each other or shared.

[0041] Next, referring to FIGS. 9A and 9B which are views seen from the X cross - sectional view of FIG. 8A, it will be explained that both a P - pole structure (right - side up) or an N - pole structure (upside - down) can be formed depending on the way of installing the front and back of the semiconductor device 8.

[0042] 《P - pole Structure·Right - side up, P - pole Structure Cross - sectional View》 FIG. 9A is a diagram (P - pole structure cross - sectional view) schematically showing an example of the cross - sectional structure of a semiconductor module 101P configured with a sitting - position P - pole structure according to the first embodiment of the present invention. In FIG. 9A, the semiconductor module 101P (semiconductor module with a P - pole structure) includes a heat - radiation fin 2, a semiconductor device 8, and a lead electrode 4. Also, as shown in FIG. 4, the semiconductor device 8, which is a primary molded body, includes a lead frame 15A, a lead frame 15B, a power semiconductor chip 10, a source lead 14, a control IC 13, and a capacitor 16. Also, primary solder 11, a conductive bonding material 12, bonding wires 17, and a sealing resin 18 are used.

[0043] The above configuration is the same as that in FIG. 4, but the above configuration will be further described from the perspective of the sitting - position P - pole structure. In FIG. 9A, the lead frame 15A connected to the first electrode of the power semiconductor chip 10 is connected to the heat - radiation fin 2. Also, the source lead 14 connected to the second electrode of the power semiconductor chip 10 is connected to the lead electrode 4. With the above configuration, the semiconductor module 101P constitutes a P - pole structure. Also, this structure is referred to as "sitting - position".

[0044] 《N - pole structure·reverse - position, N - pole structure cross - sectional view》 FIG. 9B is a diagram (N - pole structure cross - sectional view) schematically showing an example of the cross - sectional structure of a semiconductor module 101N configured with an inverse - position N - pole structure according to the first embodiment of the present invention. In FIG. 9B, the semiconductor module 101N (semiconductor module with an N - pole structure) is arranged with the vertical direction reversed in the paper plane view compared to the semiconductor module 101P shown in FIG. 9A. Therefore, in FIG. 9B, the lead frame 15A connected to the first electrode of the power semiconductor chip 10 is connected to the lead electrode 4. Also, the source lead 14 connected to the second electrode of the power semiconductor chip 10 is connected to the heat - radiation fin 2.

[0045] In other words, the connection relationship between the lead electrode 4 and the heat sink fin 2 is inverted in terms of the connection relationship between the terminals of the power semiconductor chip 10. Therefore, semiconductor module 101N has the opposite characteristics to semiconductor module 101P. For example, when a semiconductor module is used as a rectifier, the polarity of the positive and negative rectification characteristics is reversed. With the above configuration, the semiconductor module 101N forms an N-pole structure. This structure is also referred to as "inverted."

[0046] The relationship between the P-pole structure (which is in a reclining position) and the N-pole structure (which is in a reversed position). As described above, while the overall appearance and terminal connection structure of the semiconductor module are identical, by using the forward and reverse orientations of the semiconductor device 8 inside the semiconductor module in a paper view, it is possible to create two configurations with opposite electrical characteristics: a standard orientation (P-pole structure) and a reverse orientation (N-pole structure). In other words, by using the orientation of a common component, the semiconductor device 8, in either the forward or reverse direction, the semiconductor module 101 can be manufactured as both a forward-facing (P-pole structure) semiconductor module 101P and an inverted-facing (N-pole structure) semiconductor module 101N.

[0047] Furthermore, the semiconductor module 101P with a P-pole structure (right-facing) and the semiconductor module 101N with an N-pole structure (inverted) can be used individually as rectifier elements, for example. However, multiple P-pole semiconductor modules 101P and N-pole semiconductor modules 101N can be combined to construct various circuits. For example, a circuit that converts three-phase AC to DC can also be constructed.

[0048] <Summary of the First Embodiment> The semiconductor module 101 comprises a semiconductor device 8 made of a primary molded body, lead electrodes 4, a non-conductive case 9, and conductive heat dissipation fins 2. These components are then crimped together, and the case 9 and heat dissipation fins 2 are connected and fixed with screws 7. No sealing resin is used in this configuration. Furthermore, there is no solder between the heat dissipation fin 2 and the semiconductor device 8, nor between the lead electrode 4 and the semiconductor device 8. Furthermore, the manufacturing method of constructing the semiconductor module 101 by press-fitting the semiconductor device 8, lead electrodes 4, case 9, and heat dissipation fins 2 as described above eliminates the need for press-fitting regulations and procedures compared to the conventional manufacturing method in which a resin-encapsulated semiconductor module is press-fitted into the heat dissipation fins after completion, resulting in a reduction in secondary processing by the customer and cost savings. In addition, the effect of residual stress due to the process thermal history when using lead-free materials on press-fitting performance can be ignored.

[0049] Furthermore, the heat dissipation fin 2 is shared among multiple semiconductor modules 101. The shared heat dissipation fin 2 may be used, for example, as a heat dissipation fin for an alternator. Furthermore, since the heat dissipation fin 2 is conductive, it can be used not only for heat dissipation but also as part of an electrical circuit. Furthermore, by using two types of semiconductor devices 8 that are inverted vertically, semiconductor modules (101P, 101N) with a P-pole structure in a normal orientation and an N-pole structure in an inverted orientation can be realized at low cost.

[0050] <Effects of the First Embodiment> According to the first embodiment of the present invention, the primary molded body (semiconductor device) is directly placed on the heat dissipation fins and fixed by case compression, eliminating the need for press-fitting. Furthermore, the influence of residual stress due to the process thermal history when using lead-free materials on press-fitting performance can be ignored. Furthermore, since it eliminates the need for discs and soldering, and reduces the need for secondary processing at the customer's end, it offers cost advantages. Furthermore, resin encapsulation of the secondary molded product becomes unnecessary, reducing costs. Furthermore, since the shared heat dissipation fin 2 is conductive, it can be used not only for heat dissipation but also as part of an electrical circuit composed of multiple semiconductor modules. In summary, according to the present invention, a semiconductor module that solves the problem of heat dissipation and achieves a simple electrical circuit structure can be provided at a low cost.

[0051] ≪Second Embodiment≫ The configuration of a semiconductor module according to a second embodiment of the present invention will be described with reference to Figure 10 and other related figures. Figure 10 is a schematic diagram showing an example of a disassembled cross-sectional structure of a semiconductor module 102B according to a second embodiment of the present invention.

[0052] In Figure 10, to make the structure of the semiconductor module (102) easier to understand, the semiconductor module 102R is schematically shown as an example of a cross-sectional structure diagram, broken down into a semiconductor device 8 made of a primary molded body, lead electrodes 4, a case 9, and conductive heat dissipation fins 2. Furthermore, the case 9 and the heat sink fin 2 are fixed together by bolts 7a (7a1, 7a2) and nuts 7b (7b1, 7b2). Bolt through holes 7c ((7c91, 7c21), (7c92, 7c22)) are also provided in the case 9 and the heat sink fin 2. The bolt 7a is, for example, a hexagonal bolt.

[0053] The difference between the disassembled cross-sectional structure of the semiconductor module 101R of the first embodiment shown in Figure 2 and the disassembled cross-sectional structure of the semiconductor module 102R of the second embodiment shown in Figure 10 lies in the structure related to bolts, nuts, and screw holes. Other configurations are generally the same in Figures 10 and 1, so redundant explanations are omitted. In Figure 10, the case 9 is provided with bolt through holes 7c91 and 7c92. The heat dissipation fin 2 is also provided with bolt through holes 7c21 and 7c22.

[0054] The bolt 7a1 passes through the bolt hole 7c91 in the case 9 and the bolt hole 7c21 in the heat sink fin 2, and is joined with a nut 7b1. The bolt 7a2 passes through the bolt hole 7c22 in the heat dissipation fin 2 and the bolt hole 7c92 in the case 9, and is joined with a nut 7b2. In this manner, the semiconductor device 8 and lead electrodes 4 are housed between the case 9 and the heat sink fins 2, and the case 9 and heat sink fins 2 are crimped together using bolts (7a1, 7a2) and nuts (7b1, 7b2). Note that no sealing resin is used during the crimping process. Also, similar to Figure 2, in Figure 10, the case 9 is provided with a case protrusion 9p and a case recess 9h for coupling and alignment. Furthermore, the heat dissipation fin 2 is provided with a heat dissipation fin recess 2h and a heat dissipation fin protrusion 2p at locations corresponding to the protrusions and recesses of the case 9.

[0055] <Case Structure> The case structure will be explained in more detail with reference to Figures 11A, 11B, and 11C. Figure 11A is a diagram (case surface view) showing an example of the surface of the case 9 of the semiconductor module 102B according to the second embodiment of the present invention. In Figure 11A, there is a lead electrode through-hole 4a in the center of the surface of case 9 through which the lead electrode 4 passes. Furthermore, in the paper view of the lead electrode through-hole 4a, bolt 7a1 is indicated on the left side in the horizontal direction, and nut 7b2 is shown on the right side. Note that even if bolt 7a (7a1, 7a2) is a hexagonal bolt (hexagonal head), in the plan view of the case surface in Figure 11A, bolt 7a1 and nut 7b2 are shown as round (circular) for the sake of notation.

[0056] Figure 11B is a diagram showing an example of the back surface of the case 9 of the semiconductor module 102 according to the second embodiment of the present invention (back surface view of the case). In Figure 11B, there is a lead electrode through-hole 4a in the center of the back surface of case 9 through which the lead electrode 4 passes. Bolt through-holes (7c91, 7c92) are indicated on both sides of the lead electrode through-hole 4a in the lateral direction. The case protrusion 9p, which is a protruding part of case 9, is also indicated.

[0057] Figure 11C is a diagram (side view of the case) showing an example of a side view of the case 9 of the semiconductor module 102 according to the second embodiment of the present invention. In Figure 11C, the shape of the side of case 9 is shown not only in the shape of the central part as shown in the cross-sectional view of Figure 10, but also in addition to the shape of case 9 on the side. Furthermore, the protruding part of case 9, case protrusion 9p, is also indicated.

[0058] <Completed side view of multiple interconnected semiconductor modules> Figure 12 is a side view (completed side view) of a plurality of semiconductor modules after completion, showing an example in which a plurality of semiconductor modules 102 according to the second embodiment of the present invention are connected together. In Figure 12, multiple (3) semiconductor modules 102 are arranged and connected side by side. Similarly, multiple (3) cases 9 are arranged and connected side by side. Lead electrodes 4 extend from the center of each case 9. Note that the heat dissipation fins 2 of multiple (3) semiconductor modules 102 are shared and shown as a single heat dissipation fin 2. At two points on both sides of the semiconductor module 102, the case 9 and the heat dissipation fins 2 are connected by being crimped together with bolts 7a and nuts 7b.

[0059] <Top view of the heat sink fins of multiple interconnected semiconductor modules> Figure 13 is a top view of the heat dissipation fins of a plurality of semiconductor modules, showing an example in which a plurality of semiconductor modules 102 according to the second embodiment of the present invention are connected together. In Figure 13, multiple (3) semiconductor modules 102 are arranged and connected side by side. Additionally, multiple (3) primary molded semiconductor devices 8 are arranged side by side. Additionally, the heat dissipation fins are composed of multiple bolt holes (7c21, 7c22) arranged in a row.

[0060] Note that the heat dissipation fin 2 is not flat; as shown in Figure 10, the central and right sides are lower than the left side. In Figure 13, this portion is shown as the heat dissipation fin bottom 2d. The semiconductor device 8 is placed on this heat dissipation fin bottom 2d. Also, from the center of each semiconductor device 8, lead electrodes 4 extend through lead electrode through-holes 4a in a case 9 not shown. Note that the heat dissipation fins 2 of a plurality (three) of semiconductor modules 102 are shared and shown as one heat dissipation fin 2.

[0061] <Completed top view of a plurality of connected semiconductor modules> FIG. 14 is a top view (completed top view) of a plurality of semiconductor modules 102 according to the second embodiment of the present invention after being connected and configured, as viewed from above. In FIG. 14, a plurality (three) of semiconductor modules 102 are arranged and connected. Also, a plurality (three) of cases 9 are arranged and connected. Further, lead electrodes 4 extend from the center of each case 9.

[0062] Also, a bolt (bolt head) 7a is shown on the left side in the lateral direction of the lead electrode 4 in the plane of the drawing, and a nut 7b is shown on the right side. Note that the heat dissipation fins 2 of a plurality (three) of semiconductor modules 102 are shared and shown as one heat dissipation fin 2. Also, the width of the heat dissipation fin 2 (in the vertical direction in the plane of the drawing) is larger than the width of the case 9 (in the vertical direction in the plane of the drawing). That is, a plurality (three) of semiconductor modules 102 are arranged and pressure-bonded on a relatively large heat dissipation fin 2.

[0063] <X cross-sectional view and Y cross-sectional view> In FIG. 14, a cross-section of a plurality (three) of semiconductor modules 102 along the X-X axis shown as X-X is shown as an X cross-sectional view in FIG. 15A. Also, in FIG. 14, a cross-section of the semiconductor module 102 along the Y-Y axis shown as Y-Y is shown as a Y cross-sectional view in FIG. 15B.

[0064] 《X cross-sectional view》 FIG. 15A is a diagram (X cross-sectional view) showing a cross-sectional structure of an X cross-section in FIG. 14 in which a plurality of semiconductor modules 102 according to the second embodiment of the present invention are connected and configured. In FIG. 15A, in one (each) semiconductor module 102, a semiconductor device 8 and a lead electrode 4 are housed in a space formed by a case 9 and heat radiation fins 2, and the case 9, the heat radiation fins 2, the semiconductor device 8, and the lead electrode 4 are pressure-bonded and fixed by bolts 7a and nuts 7b. And a plurality (three) of semiconductor modules 102 are connected and configured.

[0065] 《Y Cross-Sectional View》 FIG. 15B is a diagram (Y cross-sectional view) showing a cross-sectional structure of a Y cross-section in FIG. 14 in which a plurality of semiconductor modules 102 according to the second embodiment of the present invention are connected and configured. In the semiconductor module 102 in FIG. 15B, it is shown that the semiconductor device 8 and the lead electrode 4 are housed in a space formed by the case 9 and the heat radiation fins 2. A part of the center of the lead electrode 4 protrudes from a hole in the case 9 as an axis. In the Y-Y direction, the heat radiation fins 2 and the case 9 are configured symmetrically in the left-right direction in the drawing view.

[0066] <P-Pole Structure and N-Pole Structure> Next, referring to FIGS. 16A and 16B viewed from the X cross-sectional view of FIG. 15A, it will be described that both a P-pole structure (right-side up) or an N-pole structure (upside down) can be configured depending on how the semiconductor device 8 is installed on the front and back sides.

[0067] 《P-Pole Structure·Right-Side Up》 FIG. 16A is a diagram (P-pole structure cross-sectional view) schematically showing an example of a cross-sectional structure of a semiconductor module 102P configured as a P-pole structure which is right-side up in the semiconductor module 102 according to the second embodiment of the present invention. In FIG. 16A, the semiconductor module 102P includes heat radiation fins 2, a semiconductor device 8, and a lead electrode 4. Furthermore, as shown in Figure 4, the semiconductor device 8, which is a primary molded body, is composed of a lead frame 15A, a lead frame 15B, a power semiconductor chip 10, a source lead 14, a control IC 13, and a capacitor 16. In addition, primary solder 11, a conductive bonding material 12, a bonding wire 17, and a sealing resin 18 are used.

[0068] The configuration of the semiconductor module 102P shown in Figure 16A is generally the same as that of Figure 9A. However, the difference between the semiconductor module 102P shown in Figure 16A and the semiconductor module 101P shown in Figure 9A is that while Figure 9A uses screws 7, Figure 16A uses bolts 7a and nuts 7b to connect the case 9 and the heat dissipation fins 2. The other configurations are virtually identical, so redundant explanations are omitted.

[0069] 《N-pole structure / inverted》 Figure 16B is a schematic diagram (cross-sectional view of the N-pole structure) showing an example of the cross-sectional structure of a semiconductor module 102N in which the semiconductor module 102 according to the second embodiment of the present invention is configured as an inverted N-pole structure. In Figure 16B, semiconductor module 102N is positioned in the same orientation as semiconductor module 102P shown in Figure 16A, with the semiconductor device 8 reversed in the vertical direction when viewed on paper. The configuration of the semiconductor module 102N shown in Figure 16B is generally the same as that in Figure 9B. However, the difference between the semiconductor module 102N shown in Figure 16B and the semiconductor module 101N shown in Figure 9B is that while Figure 9B uses screws 7, Figure 16B uses bolts 7a and nuts 7b to connect the case 9 and the heat sink fins 2. The other configurations are virtually identical, so redundant explanations are omitted.

[0070] Furthermore, the relationship and applications of the semiconductor module 102P with a P-pole structure (right-side up) and the semiconductor module 102N with an N-pole structure (inverted) are largely the same as described above, and therefore, any redundant explanations will be omitted.

[0071] <Effects of the second embodiment> In the semiconductor module 102 according to the second embodiment, bolts and nuts are used in the process of crimping the case 9 and the heat dissipation fins 2, so crimping can be performed more reliably than with screws 7. In addition, the impact on the semiconductor device 8 during crimping can be reduced.

[0072] ≪Third Embodiment≫ The configuration of a semiconductor module according to a third embodiment of the present invention will be described with reference to Figure 17 and other related figures. Figure 17 is a schematic diagram showing an example of a disassembled cross-sectional structure of a semiconductor module 103R (103) according to the third embodiment of the present invention. The assembled semiconductor module is referred to as semiconductor module 103, and the disassembled state is referred to as semiconductor module 103R. Furthermore, Figure 17 shows a cross-section in the YY-axis direction of Figure 20, which will be described later.

[0073] In Figure 17, to make the structure of the semiconductor module (103) easier to understand, the semiconductor module 103R is disassembled into a semiconductor device 8 made of a primary molded body, lead electrodes 4, a case 93, and conductive heat dissipation fins 23, and the cross-sectional structure is schematically shown. Furthermore, in the connection between the case 93 and the heat dissipation fins 23, the direction in which the screws 7 are inserted is standardized to the case 93 side. In Figure 17, the heat dissipation fin 23 has a groove at its bottom in the central part. The semiconductor device 8 and lead electrodes 4 are housed in the partial space formed by the bottom of the heat dissipation fin 23 and the case 93. Furthermore, although not shown in Figure 17, case 93 has a through hole through which the upper end of the lead electrode 4 passes. Furthermore, screws 7 and screw holes 7d are used to connect the case 93 and the heat dissipation fins 23, respectively.

[0074] Furthermore, the case 93 is provided with a case protrusion 93p for connecting the case 93 and the heat dissipation fin 23, and for alignment purposes. The heat dissipation fin 23 is also provided with a heat dissipation fin recess 23h at a location corresponding to the protrusion of the case 93. Then, the case protrusion 93p and the heat sink fin recess 23h are aligned, and the case 93 and the heat sink fin 23 are joined together. Furthermore, the semiconductor module 103R is joined and crimped together by the connection of the screw 7 and screw hole 7d, and the respective protrusions and recesses of the case 93 and the heat sink fin 23, thereby completing the assembly. Figure 17 shows a cross-section in the YY-axis direction of Figure 20, which will be described later.

[0075] <Case Structure> The structure of Case 93 will be described in more detail with reference to Figures 18A and 18B. Figure 18A is a diagram (case surface view) showing an example of the surface of the case 93 of the semiconductor module 103 according to the third embodiment of the present invention. In Figure 18A, there is a lead electrode through-hole 4a in the center of the surface of case 93 through which the lead electrode 4 passes. Also, screw heads 7 are indicated on both sides of the lead electrode through-hole 4a in the vertical direction in a paper view. The screw heads 7 are indicated on both sides of the lead electrode through-hole 4a, which is aligned vertically in the center.

[0076] Figure 18B is a diagram showing an example of the back surface of the case 93 of the semiconductor module 103 according to the third embodiment of the present invention (back surface view of the case). In Figure 18B, there is a lead electrode through-hole 4a in the center of the back surface of case 93 through which the lead electrode 4 passes. Additionally, screw holes 7d are indicated on both sides in the vertical direction of the lead electrode through-hole 4a in the paper view.

[0077] In Figures 18A and 18B, the case 93 is shown as a flat plane. That is, the case 93 is constructed as a flat plane except for the lead electrode through-hole 4a and the through-hole for the screw 7.

[0078] <Top view of the heat sink fins of multiple interconnected semiconductor modules> Figure 19 is a top view of the heat dissipation fins of a plurality of semiconductor modules (103) connected together, showing an example of a configuration according to the third embodiment of the present invention. In Figure 19, multiple (3) semiconductor modules (103) are arranged and connected side by side. Additionally, multiple (3) primary molded semiconductor devices 8 are arranged side by side.

[0079] Furthermore, lead electrodes 4 extend from the center of each of the multiple (3) semiconductor modules (103). Furthermore, the heat dissipation fins 2 of multiple (3) semiconductor modules 103 are shared and shown as a single heat dissipation fin 23. Furthermore, multiple screw holes 7d are paired vertically with respect to the lead electrode through-holes 4a in a paper view. Each semiconductor device 8 has a set of two screw holes 7d that are paired vertically with the lead electrode through-holes 4a, arranged horizontally.

[0080] <Completed top view of multiple interconnected semiconductor modules> Figure 20 is a top view (completed top view) of a plurality of semiconductor modules (103) connected together, showing an example of a configuration in which a plurality of semiconductor modules according to the third embodiment of the present invention are connected. In Figure 20, multiple (3) semiconductor modules (103) are arranged and connected side by side. Similarly, multiple (3) cases 93 are arranged and connected side by side. Lead electrodes 4 extend from the center of each case 93.

[0081] Furthermore, the screw 7 (head) is positioned on both sides in the vertical direction relative to the lead electrode through hole 4a in the center, as viewed from the paper. Also, two screws 7 (heads) are arranged on both sides of the lead electrode through-hole 4a, and since the case 93 is long in the vertical direction in a plan view, the length of the case 93 in the vertical direction is closer than the relationship shown in FIG. 7 compared to the length of the heat dissipation fins 23. Note that the heat dissipation fins 2 of a plurality (three) of semiconductor modules 102 are shown as being shared and formed into one heat dissipation fin 2.

[0082] <X Cross-sectional View and Y Cross-sectional View> In FIG. 20, the cross-section on the X-X axis shown as X-X is shown as an X cross-sectional view in FIG. 21A. Also, in FIG. 20, the cross-section on the Y-Y axis shown as Y-Y is shown as a Y cross-sectional view in FIG. 21B.

[0083] 《X Cross-sectional View》 FIG. 21A is a diagram (X cross-sectional view) showing an example of the cross-sectional structure on the X-X axis of FIG. 20 in which a plurality of semiconductor modules 103 according to the third embodiment of the present invention are connected and configured. In FIG. 21A, in one semiconductor module 103, the semiconductor device 8 and the lead electrode 4 are housed in the space formed by the case 93 and the heat dissipation fins 23. And it is shown that a plurality (three) of semiconductor modules 103 are connected and configured.

[0084] 《Y Cross-sectional View》 FIG. 21B is a diagram (Y cross-sectional view) showing an example of the cross-sectional structure on the Y-Y axis of FIG. 20 in which a plurality of semiconductor modules 103 according to the third embodiment of the present invention are connected and configured. In the semiconductor module 103 in FIG. 21B, it is shown that the semiconductor device 8 and the lead electrode 4 are housed in the space formed by the case 93 and the heat dissipation fins 23. As shown in FIG. 21B, in the cross-section on the Y-Y axis of FIG. 20, the heat dissipation fins 23 and the case 93 are configured symmetrically in the left-right direction in a plan view with the lead electrode 4 as the center. Also, in the thick-structured portions of the heat dissipation fins 23 on both sides of the semiconductor device 8 in a plan view, the case 93 and the heat dissipation fins 23 are pressure-bonded and connected by screws 7 and the case convex portion 93p (FIG. 17) and the heat dissipation fin concave portion 23h (FIG. 17).

[0085] <P-Pole Structure and N-Pole Structure> Next, referring to FIGS. 22A and 22B, which are views seen from the Y cross-sectional view of FIG. 21B, it will be described that both the P-pole structure (upright position) and the N-pole structure (inverted position) can be configured depending on how the semiconductor device 8 is installed on the front and back.

[0086] 《P-Pole Structure · Upright Position》 FIG. 22A is a diagram (P-pole structure cross-sectional view) schematically showing an example of the cross-sectional structure of a semiconductor module 103P configured as a P-pole structure in the upright position of the semiconductor module (103) according to the third embodiment of the present invention. In FIG. 22A, the semiconductor module 103P includes a heat dissipation fin 23, a semiconductor device 8, a lead electrode 4, and a case 93. Also, as shown in FIG. 4, the semiconductor device 8, which is a primary molded body, includes a lead frame 15A, a lead frame 15B, a power semiconductor chip 10, a source lead 14, a control IC 13, and a capacitor 16. Also, primary solder 11, a conductive bonding material 12, bonding wires 17, and a sealing resin 18 are used.

[0087] Regarding the differences from the configuration of the semiconductor module 103P shown in FIG. 22A above, the case 93 and the heat dissipation fins 23 are symmetrically configured on both sides with respect to the lead electrode 4. Otherwise, it is substantially the same as FIG. 9A. Therefore, since they are virtually the same, duplicate explanations are omitted.

[0088] 《N-Pole Structure · Inverted Position》 FIG. 22B is a diagram (N-pole structure cross-sectional view) schematically showing an example of the cross-sectional structure of a semiconductor module 103N configured as an N-pole structure in the inverted position of the semiconductor module (103) according to the third embodiment of the present invention. In Figure 22B, semiconductor module 103N is positioned with semiconductor module 103P shown in Figure 22A, but with the semiconductor device 8 positioned upside down in a paper view. The configuration of the semiconductor module 103N shown in Figure 22B is generally the same as that in Figure 9B. However, the difference between the semiconductor module 103N shown in Figure 22B and the semiconductor module 101N shown in Figure 9B is that the case 93 and heat dissipation fins 23 are configured symmetrically on both sides with respect to the lead electrodes 4. Otherwise, it is generally the same as in Figure 9B. Therefore, any redundant explanations will be omitted.

[0089] Furthermore, the relationship and applications of the semiconductor module 103P with a P-pole structure in a reclined position as shown in Figure 22A and the semiconductor module 103N with an N-pole structure in an inverted position as shown in Figure 22B are generally the same as those described above in Figures 9A and 9B, and therefore, redundant explanations will be omitted.

[0090] <Effects of the Third Embodiment> In the third embodiment, compared to the first embodiment, the direction in which the screws 7 are inserted is standardized to the same direction when connecting the case 93 and the heat dissipation fins 23, thus simplifying the manufacturing process (assembly process).

[0091] ≪Fourth Embodiment≫ The configuration of a semiconductor module according to the fourth embodiment of the present invention will be described with reference to Figure 23 and other related figures. Figure 23 schematically shows an example of a disassembled cross-sectional structure of a semiconductor module 104R(104) according to the fourth embodiment of the present invention. The assembled semiconductor module is referred to as semiconductor module 104, and the disassembled state is referred to as semiconductor module 104R. Furthermore, Figure 23 shows a cross-section in the YY axis direction of Figure 26, which will be described later.

[0092] In Figure 23, to make the structure of the semiconductor module (104) easier to understand, the semiconductor module 104R is schematically shown as an example of a cross-sectional structure diagram, broken down into a semiconductor device 8 made of a primary molded body, lead electrodes 4, a case 94, and conductive heat dissipation fins 24. Furthermore, in the connection between the case 94 and the heat dissipation fins 24, the direction in which the bolts are inserted is standardized to the case 94 side. The main difference between Figure 23 of the fourth embodiment and Figure 17 of the third embodiment is that in Figure 17, screws 7 are used to join the case 93 and the heat dissipation fins 23, whereas in Figure 23 of the fourth embodiment, bolts 7a and nuts 7b are used to join the case 94 and the heat dissipation fins 24.

[0093] Furthermore, in Figure 23, a case protrusion 94p is provided on the case 94 for connecting the case 94 and the heat dissipation fin 24, and for alignment purposes. In addition, a heat dissipation fin recess 24h is provided on the heat dissipation fin 24 at a location corresponding to the protrusion on the case 94. Then, the case protrusion 94p and the heat sink fin recess 24h are aligned, and the case 94 and the heat sink fin 24 are joined together. Furthermore, the semiconductor module 104R is joined and crimped together by the bolt 7a and nut 7b, and the respective protrusions and recesses of the case 94 and the heat sink fin 24, thereby completing the assembly.

[0094] <Case Structure> The structure of the case of the fourth embodiment will be described with reference to Figures 24A and 24B. Figure 24A is a diagram (case surface view) showing an example of the surface of the case 94 of the semiconductor module 104 according to the fourth embodiment of the present invention. In Figure 24A, the lead electrode through-hole 4a is located in the center of the vertical direction on the surface of case 94 when viewed from the paper, through which the lead electrode 4 passes. Bolts 7a (heads) are also indicated on both sides of the lead electrode through-hole 4a in the vertical direction.

[0095] Figure 24B is a diagram showing an example of the back surface of the case 94 of the semiconductor module 104 according to the fourth embodiment of the present invention (back surface view of the case). In Figure 24B, on the back of case 94, there is a lead electrode through-hole 4a in the vertical direction center when viewed from the paper, through which the lead electrode 4 passes. Additionally, bolt through-holes 7c are indicated on both sides of the lead electrode through-hole 4a in the vertical direction when viewed from the paper.

[0096] <Top view of the heat sink fins of multiple interconnected semiconductor modules> Figure 25 is a top view of the heat dissipation fins of a plurality of semiconductor modules, showing an example in which a plurality of semiconductor modules 104 according to the fourth embodiment of the present invention are connected together. In Figure 25, multiple (3) semiconductor modules 104 are arranged and connected side by side. Additionally, multiple (3) primary molded semiconductor devices 8 are arranged side by side.

[0097] Furthermore, lead electrodes 4 extend from the center of each semiconductor device 8. Note that the heat dissipation fins 24 of multiple (3) semiconductor modules 104 are shared and shown as a single heat dissipation fin 24. Furthermore, multiple bolt through-holes 7c are paired vertically with respect to the lead electrode 4 in a paper view. Each semiconductor device 8 is configured with two bolt through-holes 7c paired vertically with the lead electrode 4, arranged horizontally.

[0098] <Completed top view of multiple interconnected semiconductor modules> Figure 26 is a view from above of a completed semiconductor module 104, showing an example in which multiple semiconductor modules 104 according to the fourth embodiment of the present invention are connected together. In FIG. 26, a plurality (three) of semiconductor modules 104 are arranged and connected. Also, a plurality (three) of cases 94 are arranged and connected. Further, lead electrodes 4 extend from the center of each case 94. Also, bolts 7a are positioned on both longitudinal sides with respect to the central lead electrode 4.

[0099] In FIG. 26, the cross-section along the X-X axis is shown as an X cross-sectional view in FIG. 27A. Also, in FIG. 26, the cross-section along the Y-Y axis is shown as a Y cross-sectional view in FIG. 27B.

[0100] <X Cross-Sectional View and Y Cross-Sectional View> Next, FIGS. 27A and 27B show cross-sectional views showing the cross-sectional structures in the X cross-section and Y cross-section shown in FIG. 26.

[0101] 《X Cross-Sectional View》 FIG. 27A is a diagram (X cross-sectional view) showing an example of the cross-sectional structure in the X cross-section of FIG. 26 in which a plurality of semiconductor modules 104 according to the fourth embodiment of the present invention are connected. In the X cross-sectional view of FIG. 27A, since the bolt 7a, nut 7b, and bolt through-hole 7c do not exist and the structure is the same as that shown in FIG. 21A of the third embodiment, substantially overlapping explanations are omitted.

[0102] 《Y Cross-Sectional View》 FIG. 27B is a diagram (Y cross-sectional view) showing an example of the cross-sectional structure in the Y cross-section of FIG. 26 in which a plurality of semiconductor modules 104 according to the fourth embodiment of the present invention are connected. In FIG. 27B, bolts 7a, nuts 7b, and bolt through-holes 7c are used for connecting the case 94 and the heat dissipation fins 2. The difference between FIG. 27B of this fourth embodiment and FIG. 21B of the above-described third embodiment is that bolts 7a, nuts 7b, and bolt through-holes 7c are used instead of screws 7. Since the other structures in FIG. 27B are substantially the same as those in FIG. 21B, substantially overlapping explanations are omitted.

[0103] Next, referring to FIGS. 28A and 28B, which are views seen from the Y - cross - sectional view of FIG. 27B, it will be explained that both the P - pole structure (upright seating) or the N - pole structure (inverted seating) can be formed depending on the way of installing the semiconductor device 8 on the front and back sides.

[0104] 《P - pole structure · upright seating》 FIG. 28A is a diagram (P - pole structure cross - sectional view) schematically showing an example of the cross - sectional structure of a semiconductor module 104P configured as a P - pole structure (upright seating) of a semiconductor module (104, 104R) according to the fourth embodiment of the present invention. In FIG. 28A, the semiconductor module 104P includes a case 94, heat - radiating fins 24, a semiconductor device 8, and lead electrodes 4. And bolts 7a and nuts 7b, and bolt through - holes 7c are used for connecting the case 94 and the heat - radiating fins 24. The difference between FIG. 28A of this fourth embodiment and FIG. 22A shown in the above - mentioned third embodiment is that bolts 7a and nuts 7b, and bolt through - holes 7c are used instead of screws 7. Since other structures in FIG. 28A are substantially the same as those in FIG. 22A, in fact, overlapping explanations are omitted.

[0105] 《N - pole structure · inverted seating》 FIG. 28B is a diagram (N - pole structure cross - sectional view) schematically showing an example of the cross - sectional structure of a semiconductor module 104N configured as an N - pole structure (inverted seating) of a semiconductor module (104) according to the fourth embodiment of the present invention. In FIG. 28B, the semiconductor module 104N includes a case 94, heat - radiating fins 24, a semiconductor device 8, and lead electrodes 4. And bolts 7a and nuts 7b, and bolt through - holes 7c are used for connecting the case 94 and the heat - radiating fins 24. The difference between Figure 28B of this fourth embodiment and Figure 22B shown in the third embodiment described above is that bolts 7a and nut 7b, and bolt through holes 7c are used instead of screws 7. The other structures in Figure 28B are generally the same as those in Figure 22B, so the explanations that would essentially be redundant are omitted.

[0106] <Effects of the 4th Embodiment> In the fourth embodiment, compared to the second embodiment, the direction in which the bolts 7a are inserted is standardized to the same direction when connecting the case 94 and the heat dissipation fins 24, thus simplifying the manufacturing process (assembly process).

[0107] <Other embodiments and supplementary information> It should be noted that the present invention is not limited to the embodiments described above, and includes a variety of further modifications. For example, the embodiments described above are described in detail for the purpose of clearly illustrating the present invention, and are not necessarily limited to those having all the configurations described. Furthermore, it is possible to replace a part of the configuration of one embodiment with a part of the configuration of another embodiment, and it is also possible to add a part or all of the configuration of another embodiment to the configuration of one embodiment. Further embodiments and modifications are described below.

[0108] Power semiconductor chips In the description of the first embodiment of the present invention, an example was given in which the power semiconductor chip 10 is composed of MOSFETs. However, it is not limited to MOSFETs. For example, it may be constructed using IGBTs (Insulated Gate Bipolar Transistors) or superjunction MOSFETs.

[0109] Semiconductor chips In Figure 4, the semiconductor device 8 is described as a primary molded body. However, the semiconductor device 8 is not limited to a primary molded body. The lead frame 15A, lead frame 15B, power semiconductor chip 10, source lead 14, control IC 13, capacitor 16, etc. that constitute the semiconductor device 8 shown in Figure 4 may be made up of a single semiconductor chip. Furthermore, the semiconductor device 8 may be composed of a semiconductor chip on which diodes are formed. Furthermore, the aforementioned single-chip semiconductor chip has electrode terminals on both sides, and the electrode terminals on the first side are electrically connected to the lead electrodes 4, and the electrode terminals on the second side are electrically connected to the heat dissipation fins 2 during the crimping process. In addition, the sides of the semiconductor chip other than the electrode terminals are insulated. With these configurations, it is possible to replace the aforementioned semiconductor chip with the semiconductor device 8 without the soldering or resin encapsulation processes.

[0110] 《Configuration of Semiconductor Devices》 In Figure 4, an example of configuring the semiconductor device 8 as a primary molded body is shown, which consists of a lead frame 15A, a lead frame 15B, a power semiconductor chip 10, a source lead 14, a control IC 13, and a capacitor 16. However, the configuration examples and circuit examples for the primary molded body are not limited to those described above. Various components may be used in the configuration of the primary molded body. Furthermore, the circuit configuration of the primary molded body is not limited to a rectifier circuit. Various circuits may be configured. Even with such various circuit configurations, the semiconductor module shown in Figures 1 and 2 can effectively utilize the heat dissipation fins 2.

[0111] Combination of P-pole and N-pole semiconductor modules Although semiconductor modules with a P-pole structure and semiconductor modules with a N-pole structure have been described separately from a structural standpoint, when configuring the circuit of a predetermined device using multiple semiconductor modules, multiple semiconductor modules with P-pole and N-pole structures may be combined. Furthermore, while the example given was a semiconductor module composed of rectifier elements (rectifier circuits), it is not limited to rectifier elements (rectifier circuits). For example, it could also be a drive element (drive circuit) or an element that constitutes a logic circuit.

[0112] 《Semiconductor Module Arrangement》 Figures 8A, 15A, 21A, and 27A show examples of semiconductor modules being linked and arranged. However, when arranging multiple semiconductor modules using a common heat sink fin, the arrangement is not limited to being linked together. For example, the fins may be arranged intermittently rather than continuously around a common heat sink. Furthermore, the angle at which they are arranged may be changed as appropriate. By flexibly arranging multiple semiconductor modules on a common heat sink in this way, it becomes possible to arrange them, for example, on a horseshoe-shaped heat sink.

[0113] 《Shape of heat sink fins, shape of semiconductor module》 In Figures 1, 6, and 7 illustrating the first embodiment, the planar shape of the heat dissipation fins of the semiconductor module is represented as a rectangle. However, it is not limited to a rectangle. It is also possible to share a single heat sink fin among multiple semiconductor modules, and to position multiple semiconductor modules at arbitrary locations on this shared heat sink fin. Thus, when using a method of bonding multiple semiconductor modules to a shared heat sink fin, the shape of the shared heat sink fin can take on a variety of shapes and forms. For example, it is possible to use a horseshoe-shaped heat sink fin, which is commonly used in alternators.

[0114] Furthermore, when multiple semiconductor modules are placed at arbitrary positions on a shared heat sink fin, the planar shape of the semiconductor module is not limited to a rectangle as shown in Figures 1, 6, and 7. The planar shape of the semiconductor module may be circular, hexagonal, or octagonal. Furthermore, multiple semiconductor modules of different shapes may be placed at any position on the shared heat sink fins. [Explanation of symbols]

[0115] 2,23,24 Heat dissipation fins (second external electrode) 2D heat sink bottom 2p heat dissipation fin protrusion 2h, 23h, 24h Heat dissipation fin recess 4. Lead electrodes (first external electrodes) 4a Lead electrode through hole 7. Screw (screw head) 7a, 7a1, 7a2 Bolts (Bolt Heads) 7b, 7b1, 7b2 nuts 7c,7c21,7c22,7c91,7c92 bolt through hole 7d screw hole 8 Semiconductor Equipment 9,93,94 cases 9h case recess Pages 9, 93, and 94: Case protrusions 10 Power Semiconductor Chips 11. First-order soldering 12 Conductive bonding material 13 Control ICs 14. Source lead (first electrode) 15A Lead frame (second electrode) 15B Lead Frame 16 Capacitors 17 Bonding wire 18 Sealing resin 101, 102, 103, 104 Semiconductor Modules 10¹N, 10²N, 10³N, 10⁴N semiconductor modules (semiconductor modules with an N-pole structure) 101P, 102P, 103P, 104P semiconductor modules (semiconductor modules with P-pole structure) 101R, 102R, 103R, 104R Semiconductor Modules (Semiconductor modules with disassembled cross-sectional structure)

Claims

1. A semiconductor device having a first electrode and a second electrode, A lead electrode, which is a first external electrode connected to the first electrode, A second external electrode connected to the second electrode, comprising a conductive heat sink fin used in an alternator, A non-conductive case having a hole through which the lead electrode passes, Equipped with, The semiconductor device and the lead electrodes are housed sandwiched between the case and the heat dissipation fins. The second electrode of the semiconductor device and the heat dissipation fin, and the first electrode of the semiconductor device and the lead electrode are electrically connected, The semiconductor device, the lead electrodes, the heat dissipation fins, and the case are crimped and fixed together. A semiconductor module characterized by the following features.

2. In claim 1, The aforementioned semiconductor device has a circuit configuration as a rectifier circuit. A semiconductor module characterized by the following features.

3. In claim 2, The semiconductor device is a primary molded body in which a MOSFET, a control circuit, and a capacitor are encapsulated in resin. A semiconductor module characterized by the following features.

4. In claim 2, The semiconductor device is a semiconductor chip in which a MOSFET, a control circuit, and a capacitor are formed on a single chip. A semiconductor module characterized by the following features.

5. In claim 2, The semiconductor device is a semiconductor chip on which diodes are formed. A semiconductor module characterized by the following features.

6. In any one of claims 1 to 5, The heat dissipation fins and the case are fixed together with screws. A semiconductor module characterized by the following features.

7. In any one of claims 1 to 5, The heat dissipation fins and the case are fixed together with bolts and nuts. A semiconductor module characterized by the following features.

8. In any one of claims 1 to 5, There is no solder between the heat dissipation fin and the semiconductor device, and no solder between the lead electrode and the semiconductor device. A semiconductor module characterized by the following features.

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