Semiconductor equipment

Abstract

To provide a semiconductor device capable of suppressing positional displacement of semiconductor chips, leads, and connectors.SOLUTION: A semiconductor device includes a semiconductor chip including a first face and a second face. A first conductive member is opposed to and electrically connected to a first electrode on the first face. A second conductive member is spaced from the semiconductor chip and the first conductive member. A third conductive member is spaced from the semiconductor chip and the first and second conductive members. A first connector is opposed to a second electrode on the second face and electrically connects the second electrode and the second conductive member to each other. A second connector is opposed to a third electrode on the second face and electrically connects the third electrode and the third conductive member to each other. A first connecting member connects the first connector and the second face to each other. A second connecting member connects the first connector and the second conductive member to each other. The first connector includes a plurality of first protruded portions protruded in a first direction from the first conductive member to the second conductive member. The second connecting member is provided to correspond to each of places between the first protruded portions and the second conductive member.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] This embodiment relates to a semiconductor device.

Background Art

[0002] In a semiconductor assembly process, a semiconductor chip may be joined between a lead and a connector, and electrodes may be drawn out from the front or back surface of the semiconductor chip. In this case, the semiconductor chip is connected to the lead and the connector by reflowing the solder supplied between the lead and the semiconductor chip and between the semiconductor chip and the connector.

[0003] However, in this solder reflow process, there is a problem that the solder flows and the semiconductor chip is displaced with respect to the lead or the connector is displaced from the semiconductor chip.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Summary of the Invention

Problems to be Solved by the Invention

[0005] To provide a semiconductor device capable of suppressing relative displacement of a semiconductor chip, a lead, and a connector.

Means for Solving the Problems

[0006] The semiconductor device according to this embodiment comprises a semiconductor chip having a first surface and a second surface opposite to the first surface. The first conductive member faces and is electrically connected to a first electrode on the first surface of the semiconductor chip. The second conductive member is spaced apart from the semiconductor chip and the first conductive member. The third conductive member is spaced apart from the semiconductor chip and the first and second conductive members. The first connector faces and is electrically connected to a second electrode on the second surface of the semiconductor chip and to the second conductive member. The second connector faces and is electrically connected to a third electrode on the second surface of the semiconductor chip and to the third conductive member. The first connecting member connects the first connector and the second surface of the semiconductor chip. The second connecting member connects the first connector and the second conductive member. The first connector has a plurality of first protrusions projecting in a first direction from the first conductive member to the second conductive member. The second connecting member is provided correspondingly between the plurality of first protrusions and the second conductive member. [Brief explanation of the drawing]

[0007] [Figure 1A] A cross-sectional view showing an example of the configuration of a semiconductor device according to the first embodiment. [Figure 1B] A cross-sectional view showing an example of the configuration of a semiconductor device according to the first embodiment. [Figure 1C] A perspective view showing an example of the configuration of a semiconductor device according to the first embodiment. [Figure 2] An enlarged cross-sectional view of the area shown in Figure 1B. [Figure 3] A schematic plan view showing an example of the configuration of a semiconductor device according to the first embodiment. [Figure 4] A schematic cross-sectional view showing an example of the configuration of a semiconductor device according to the first embodiment. [Figure 5] A schematic cross-sectional view showing an example configuration of one part p1, its corresponding part p3, and connecting members. [Figure 6] A schematic cross-sectional view showing an example of the configuration of the second connector according to the first embodiment. [Figure 7] A schematic cross-sectional view showing an example configuration of one part p1_3, its corresponding part p3_3, and connecting members. [Figure 8]A cross-sectional view showing an example of the configuration of a semiconductor device according to the second embodiment. [Figure 9] A cross-sectional view showing an example of the configuration of a semiconductor device according to the second embodiment. [Figure 10] A cross-sectional view showing an example of the configuration of a semiconductor device according to the third embodiment. [Figure 11] A cross-sectional view showing an example of the configuration of a semiconductor device according to the third embodiment. [Modes for carrying out the invention]

[0008] Embodiments of the present invention will be described below with reference to the drawings. These embodiments are not limiting to the present invention. The drawings are schematic or conceptual, and the proportions of each part may not necessarily be the same as those of actual objects. In the specification and drawings, elements similar to those described above with respect to previously shown drawings are denoted by the same reference numerals, and detailed explanations are omitted as appropriate.

[0009] (First Embodiment) Figures 1A and 1B are cross-sectional views showing an example configuration of the semiconductor device 100 according to the first embodiment. Figure 1C is a perspective view showing an example configuration of the semiconductor device according to the first embodiment. Figure 1B is a cross-sectional view taken along line A1-A2 in Figure 1C.

[0010] The semiconductor device 100 according to the first embodiment comprises a semiconductor chip 10, a first conductive member 21, a second conductive member 22, a third conductive member 23, a first connector 51, a second connector 52, connecting members 41 to 43, and a resin part 30.

[0011] The semiconductor chip 10 may be, for example, a bipolar transistor, a MOSFET (Metal Oxid Semiconductor Field Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), etc. that can pass a large current between a source and a drain based on a gate voltage. As shown in FIG. 1A, the semiconductor chip 10 includes a first electrode 11 (e.g., a drain electrode), a second electrode 12 (e.g., a source electrode), a third electrode 13 (e.g., a gate electrode), and a semiconductor layer 10s.

[0012] The semiconductor chip 10 has a first surface F1 and a second surface F2 on the side opposite to the first surface F1. The drain electrode 11 as the first electrode is provided on the first surface F1 of the semiconductor chip 10, and the source electrode 12 as the second electrode and the gate electrode 13 as the third electrode are provided on the second surface F2 of the semiconductor chip 10. The semiconductor layer 10s is provided between the drain electrode 11 and the source electrode 12.

[0013] The first conductive member 21 is a base region on which the semiconductor chip 10 is mounted and is a part of the lead frame. The first conductive member 21 faces and is electrically connected to the drain electrode 11 on the first surface F1. For the first conductive member 21, a conductive material such as copper is used, for example.

[0014] As shown in FIG. 1B, the first conductive member 21 includes a portion p5 and a portion p6. The portion p5 is a base region on which the semiconductor chip 10 is mounted and has a size equal to or larger than that of the semiconductor chip 10. The portion p6 is a protruding portion extending in the -X direction from the portion p5 and is a lead region that enables connection to the outside and is formed as a plurality of protruding portions.

[0015] As shown in Figure 1A, a connecting member 43 is provided between the semiconductor chip 10 and the first conductive member 21. The connecting member 43 fixes the semiconductor chip 10 to the first conductive member 21 and electrically connects the drain electrode 11 of the semiconductor chip 10 to the first conductive member 21. The connecting member 43 is made of a conductive material, such as solder, which has a lower melting point than the semiconductor chip 10 and the first conductive member 21.

[0016] The second conductive member 22 is an outer lead spaced apart in the X direction from the semiconductor chip 10 and the first conductive member 21, and is part of the lead frame. The second conductive member 22 faces the first connector 51 and is electrically connected to the first connector 51. For example, a conductive material such as copper is used for the second conductive member 22.

[0017] A connecting member 42 is provided between the second conductive member 22 and the first connector 51. The connecting member 42 fixes the first connector 51 to the second conductive member 22 and electrically connects the first connector 51 to the second conductive member 22. Like the connecting member 43, the connecting member 42 is made of a conductive material with a lower melting point than the semiconductor chip 10 and the first conductive member 21. For example, a conductive material such as solder is used for the connecting member 42.

[0018] The second conductive member 22 includes a third portion p3 and a fourth portion p4. The third portion p3 is positioned higher in the Z direction than the fourth portion p4 and functions as a post that connects to the first connector 51 via a connecting member 42. The fourth portion p4 extends approximately in the X direction from the third portion p3 and becomes an external terminal that connects to the outside. There is an intermediate portion mp2 between the third portion p3 and the fourth portion p4. The intermediate portion mp2 bends between the third portion p3 and the fourth portion p4 to connect them integrally and continuously. The source electrode 12 of the semiconductor chip 10 is electrically connected to the second conductive member 22 via the first connector 51 and the second connecting member 42. That is, the second conductive member 22 functions as an outer lead connected to the source electrode 12.

[0019] The first connector 51 faces the second surface F2 of the semiconductor chip 10 and electrically connects the source electrode 12 and the second conductive member 22. The first connector 51 includes a first portion p1, an intermediate portion mp1, and a second portion p2. The first portion p1 faces the third portion p3 of the second conductive member 22 and is electrically connected to the second conductive member 22 via a connecting member 42. The second portion p2 faces the second surface F2 of the semiconductor chip 10 and is electrically connected to the source electrode 12 via a connecting member 41. The intermediate portion mp1 is bent to connect the first portion p1 and the second portion p2 integrally and continuously. The first intermediate portion mp1 protrudes in the Z-axis direction more than the second portion p2 and the first portion p1. The first connector 51 functions as a connector that electrically connects the source electrode 12 of the semiconductor chip 10 and the second conductive member 22.

[0020] A connecting member 41 is provided between the second surface F2 of the semiconductor chip 10 and the first connector 51. The connecting member 41 fixes the first connector 51 to the source electrode 12 on the second surface F2 of the semiconductor chip 10 and electrically connects the first connector 51 to the source electrode 12. Like connecting members 42 and 43, the connecting member 41 is made of a conductive material with a lower melting point than the semiconductor chip 10 and the first conductive member 21. For example, a conductive material such as solder is used for the connecting member 41.

[0021] The third conductive member 23 shown in Figure 1C has a configuration similar to the second conductive member 22 and is electrically connected to the gate electrode 13 of the semiconductor chip 10. The cross-section of the region of the third conductive member 23 may be the same as in Figure 1A or Figure 2. The third conductive member 23 is an outer lead spaced apart in the X or Y direction from the semiconductor chip 10 and the first and second conductive members 21 and 22, and is part of the lead frame. The third conductive member 23 faces and is electrically connected to the second connector 52. For example, a conductive material such as copper can be used for the third conductive member 23.

[0022] The third conductive member 23 is separate from the second conductive member 22 and differs in size, but has a similar shape to the second conductive member 22 when viewed from the side in the Y direction. Therefore, the third conductive member 23, like the second conductive member 22, includes parts p3_3 and p4_3 corresponding to the third part p3 and the fourth part p4. Part p3_3 is located higher in the Z direction than part p4_3 and functions as a post that connects to the second connector 52 via a connecting member. Part p4_3 extends from part p3_3 almost in the X direction and becomes an external terminal that connects to the outside. There is an intermediate part mp2_3 between parts p3_3 and parts p4_3. The intermediate part mp2_3 bends between parts p3_3 and parts p4_3 to connect them integrally and continuously. The gate electrode 13 of the semiconductor chip 10 is electrically connected to the third conductive member 23 via the second connector 52 and the connecting member. In other words, the third conductive member 23 functions as an outer lead connected to the gate electrode 13.

[0023] The second connector 52 is separate from the first connector 51 and is of a different size, but has a similar shape to the first connector 51 when viewed from the side in the Y direction. Therefore, the second connector 52, like the first connector 51, includes parts p1_3, p2_3, and intermediate part mp1_3, which correspond to the first part p1, the second part p2, and the intermediate part mp1.

[0024] The second connector 52 faces the second surface F2 of the semiconductor chip 10 and electrically connects the gate electrode 13 and the third conductive member 23. Part p1_3 faces part p3_3 of the third conductive member 23 and is electrically connected to the third conductive member 23 via a connecting member (e.g., solder). Part p2_3 faces the second surface F2 of the semiconductor chip 10 and is electrically connected to the gate electrode 13 via a connecting member (44 in Figure 3). The intermediate part mp1_3 is bent to connect parts p1_3 and p2_3 integrally and continuously. The intermediate part mp1_3 protrudes more in the Z-axis direction than parts p2_3 and p1_3. The second connector 52 functions as a connector that electrically connects the gate electrode 13 of the semiconductor chip 10 and the third conductive member 23.

[0025] A connecting member (45 in Figures 3 and 6) is provided between the third conductive member 23 and the second connector 52. This connecting member 44 fixes the second connector 52 to the third conductive member 23 and electrically connects the second connector 52 to the third conductive member 23. The same conductive material (for example, solder) as the connecting member 43 is used for this connecting member.

[0026] The resin portion 30 covers and seals the entire structure provided on the first and second conductive members 21 and 22. For example, an insulating material such as resin is used for the resin portion 30. On the other hand, portion p6 of the first conductive member 21, portion p4 of the second conductive member 22, and portion p4_3 of the third conductive member 23 are exposed from the resin portion 30. As a result, portions p4, p4_3, and p6 function as lead regions electrically connected to the outside.

[0027] In this way, the first conductive member 21 is electrically connected to the drain electrode 11. The second conductive member 22 is electrically connected to the source electrode 12 via the first connector 51. The third conductive member 23 is electrically connected to the gate electrode 13 via the second connector 52.

[0028] For the conductive members 21-23 and connectors 51 and 52, metals such as Cu are used, for example. For the connecting members 41-45, solder is used, for example. For the resin part 30, epoxy resin is provided, for example. The resin part 30 may also contain fillers.

[0029] The semiconductor device 100 may be, for example, an SOP (small outline package) type semiconductor device.

[0030] Figure 2 is an enlarged cross-sectional view of portion PA in Figure 1B. The first intermediate portion mp1 of the first connector 51 is located above the second portion p2 and the first portion p1. In the Z-axis direction, the position of the first portion p1 is between the position of the connecting member 42 and the position of the intermediate portion mp1. In the Z-axis direction, the position of the second portion p2 is between the position of the connecting member 41 and the position of the intermediate portion mp1.

[0031] The first portion p1 of the first connector 51 has a surface 21f facing the connecting member 42. The surface 21f includes a recess 21d and a protrusion 21p.

[0032] The portion p1 of the first connector 51 is located above the third portion p3 of the second conductive member 22. The height position of the recess 21d in the Z direction is higher than the height position of the convex portion 21p. The bottom surface of the recess 21d is raised higher in the Z direction than the convex portion 21p and recessed in the +Z direction.

[0033] The recess 21d is located at the end of portion p1. The recess 21d has a bottom 21df. At least a portion of the bottom 21df extends in the X or Y direction.

[0034] In the X direction, the protrusion 21p is located between the recess 21d and the portion p2.

[0035] The distance between portion p1 and portion p3 in the recess 21d is greater than that in the protrusion 21p. For example, let Lz2 be the distance along the Z-axis between the recess 21d and portion p3. Let Lzp2 be the distance along the Z-axis between the protrusion 21p and portion p3. In this case, distance Lz2 is longer than distance Lzp2.

[0036] As a result, the thickness of the connecting member 41 located between portion p3 and recess 21d (corresponding to distance Lz2) becomes greater than the thickness of the connecting member 41 located between portion p3 and protrusion 21p (corresponding to distance Lzp2). This leads to the suppression of cracks or delamination of the connecting member 41.

[0037] Figure 3 is a schematic plan view showing an example configuration of the semiconductor device 100 according to the first embodiment. Figure 4 is a schematic cross-sectional view showing an example configuration of the semiconductor device 100 according to the first embodiment. Figure 4 corresponds to the cross-section along line 4-4 in Figure 3. Note that Figures 3 and 4 show a simplified representation of the semiconductor device 100, such as in Figure 1C, for convenience.

[0038] In this embodiment, as shown in Figure 3, the multiple portions p1 of the first connector 51 as a source connector are examples of multiple first protrusions, protruding in the +X direction from portion p2 and intermediate portion mp1. That is, the multiple portions p1 protrude in a comb-like manner from the first conductive member 21 toward the second conductive member 22. Each of the multiple portions p1 is provided corresponding to portion p3 or p4 of the second conductive member 22. Therefore, the number of portions p1 is equal to the number of portions p3 or p4. However, the number of portions p1 may differ from the number of portions p3 or p4.

[0039] The portion p3 of the second conductive member 22 is an example of a third projection, and protrudes in the -X direction from portion p4 or the intermediate portion mp2. Multiple portions p3 are provided corresponding to multiple portions p1.

[0040] As shown in Figure 4, connecting members 42 are provided between multiple parts p1 of the first connector 51 and multiple parts p3 of the second conductive member 22. The connecting members 42 are provided corresponding to each of the multiple parts p1 and multiple parts p3. The connecting member 42 between one part p1 and one part p3 is separated from the connecting member 42 between other parts p1 and other parts p3.

[0041] Multiple parts p1 are physically separated from each other in the regions where connecting members 42 are provided. Multiple parts p3 are also physically separated from each other in the regions where connecting members 42 are provided. However, as shown in Figure 3, multiple parts p1 together with part p2 and intermediate part mp1 constitute the first connector 51. Therefore, multiple parts p1 are electrically connected to each other. Although not shown, multiple parts p3 together with part p4 may constitute the second conductive member 22. Therefore, multiple parts p3 are also electrically connected to each other.

[0042] Figure 5 is a schematic cross-sectional view showing an example configuration of one portion p1, its corresponding portion p3, and the connecting member 42. In this embodiment, in a cross-section perpendicular to the X direction, the first width W51 of the surface on which portion p1, as the first projection, faces portion p3, as the third projection, is smaller than the second width W22 of the surface on which portion p3 faces portion p1. Also, in a plan view from the Z direction, portion p1 overlaps with portion p3, and portion p3 appears on both sides of portion p1. As a result, the connecting member 42 (e.g., solder) creeps up from the bottom surface of portion p1 to the lower part of the side surface SF51 and covers it during the reflow process. That is, the fillet FT of the connecting member 42 creeps up somewhat along the side surface SF51 of portion p1 due to surface tension. Preferably, the centerlines of portion p1 and portion p3 are approximately coincident or close to each other. That is, it is preferable that the first connector 51, the second conductive member 22, and the connecting member 42 are symmetrical in the Y direction. As a result, the fillet FT of the connecting member 42 is formed substantially evenly on the side surfaces SF51 on both sides of portion p1.

[0043] As described above, according to this embodiment, the first connector 51 as a source connector has a plurality of portions p1 that protrude in the +X direction from a portion p2 on the semiconductor chip 10. The second conductive member 22 as a source outer lead has a plurality of portions p3 that protrude in the -X direction from a portion p4. A connecting member 42 (e.g., solder) is provided between each of the plurality of portions p1 and the plurality of portions p3 that correspond to each other. As shown in Figure 4, the connecting members 42 are separated from each other between the plurality of portions p1 and the plurality of portions p3. Therefore, when the connecting members 42 are reflowed by heat treatment, as shown in Figure 4, the plurality of portions p1 are positioned near the center of their respective corresponding portions p3 by the surface tension of the connecting member 42, making them less likely to shift in the Y direction (less likely to rotate). In addition, due to the surface tension of the connecting member 42, the connecting member 42 crawls up onto the side surface SF51 of the portion p1, forming a fillet FT. Therefore, the plurality of portions p1 become even less likely to shift in the Y direction from their respective corresponding portions p3 (less likely to rotate). During this reflow process, the connecting members 41 and 43 are also reflowed simultaneously. However, since portion p1 of the first connector 51 is positioned almost precisely on portion p3 of the second conductive member 22, the first connector 51 is less likely to shift from the semiconductor chip 10 and the first conductive member 21. As a result, according to this embodiment, relative positional shifts between the semiconductor chip 10, conductive members 21 and 22, and the connector 51 can be suppressed.

[0044] Figure 6 is a schematic cross-sectional view showing an example of the configuration of the second connector 52 according to the first embodiment. Figure 6 corresponds to the cross-section along line 6-6 in Figure 3. Note that, for convenience, Figure 6 also shows a simplified representation of the semiconductor device 100, as in Figure 1C.

[0045] In this embodiment, the gate side has the same configuration as the source side. The multiple portions p1_3 of the second connector 52 as a gate connector are examples of multiple first protrusions, and as shown in Figure 3, they protrude in the +X direction from portions p2_3 and intermediate portions mp1_3. That is, the multiple portions p1_3 protrude in a comb-like manner from the first conductive member 21 to the third conductive member 23. As shown in Figure 6, each of the multiple portions p1_3 corresponds to a portion p3_3 of the third conductive member 23. The number of portions p1_3 is equal to the number of portions p3_3. However, the number of portions p1_3 may be different from the number of portions p3_3.

[0046] The multiple portions p3_3 of the third conductive member 23 are examples of third protrusions, protruding in the -X direction from portion p4_3 or intermediate portion mp1_3. The multiple portions p3_3 are provided in correspondence with the multiple portions p1_3.

[0047] As shown in Figure 6, connecting members 45 are provided between multiple parts p1_3 of the second connector 52 and multiple parts p3_3 of the third conductive member 23. The connecting members 45 are provided corresponding to each of the multiple parts p1_3 and multiple parts p3_3. The connecting member 45 between one part p1_3 and one part p3_3 is separated from the connecting member 45 between other parts p1_3 and other parts p3_3.

[0048] The multiple parts p1_3 are physically separated from each other in the regions where the connecting member 45 is provided. Similarly, the multiple parts p3_3 in Figure 6 are also physically separated from each other in the regions where the connecting member 45 is provided. However, as shown in Figure 3, the multiple parts p1_3 together with part p2_3 and the intermediate part mp1_3 constitute the second connector 52. Therefore, the multiple parts p1_3 are electrically connected to each other. Furthermore, the multiple parts p3_3 together with part p4_3 constitute the third conductive member 23. Therefore, the multiple parts p3_3 are also electrically connected to each other.

[0049] Figure 7 is a schematic cross-sectional view showing an example configuration of one portion p1_3, its corresponding portion p3_3, and a connecting member 45. In a cross-section perpendicular to the X direction, the third width W52 of the surface on which portion p1_3, as the second projection, faces portion p3_3, as the fourth projection, is smaller than the fourth width W23 of the surface on which portion p3_3 faces portion p1_3. Also, in a plan view from the Z direction, portion p1_3 overlaps with portion p3_3, with portion p3_3 appearing on both sides of portion p1_3. As a result, during the reflow process, the connecting member 45 (e.g., solder) creeps up from the bottom surface of portion p1_3 to the lower part of the side surface SF52 and covers it. That is, the fillet FT of the connecting member 45 creeps up somewhat along the side surface SF52 of portion p1_3 due to surface tension. Preferably, the centerlines of portion p1_3 and portion p3_3 are approximately coincident or close to each other. In other words, it is preferable that the second connector 52, the third conductive member 23, and the connecting member 45 are symmetrical in the Y direction. This ensures that the fillet FT of the connecting member 45 is formed substantially evenly on both sides of the portion p1_3 (SF52).

[0050] Thus, according to this embodiment, the second connector 52 as a gate connector has a plurality of portions p1_3 that protrude in the +X direction from a portion p2_3 on the semiconductor chip 10. The third conductive member 23 as a gate outer lead has a plurality of portions p3_3 that protrude in the -X direction from a portion p4_3. A connecting member 45 (for example, solder) is provided between each of the plurality of portions p1_3 and the plurality of portions p3_3 that correspond to each other. As shown in Figure 6, the connecting members 45 are separated from each other between the plurality of portions p1_3 and the plurality of portions p3_3. Therefore, when the connecting members 45 are reflowed by heat treatment, as shown in Figure 6, the plurality of portions p1_3 are positioned near the center of the corresponding portion p3_3 by the surface tension of the connecting member 45, making them less likely to shift in the Y direction (less likely to rotate). Also, due to the surface tension of the connecting member 45, the connecting member 45 creeps up onto the side surface SF52 of the portion p1_3, forming a fillet FT. Therefore, the multiple parts p1_3 become less likely to shift (rotate) in the Y direction from their respective corresponding parts p3_3. Although the connecting member 44 is also reflowed during this reflow process, the part p1_3 of the second connector 52 is positioned almost precisely on the part p3_3 of the third conductive member 23, so the second connector 52 also becomes less likely to shift from the semiconductor chip 10 and the first conductive member 21.

[0051] If multiple parts p1 do not protrude individually but are continuous with each other, or if multiple parts p1_3 do not protrude individually but are continuous with each other, the positions of connectors 51 and 52 are more likely to shift during the reflow soldering process, potentially leading to reduced reliability and short-circuit failures.

[0052] In contrast, in the semiconductor device 100 according to this embodiment, the multiple parts p1 each protrude and are separated from one another. The multiple parts p1_3 each protrude and are separated from one another. As a result, according to this embodiment, the relative positional displacement of the semiconductor chip 10, the conductive member 23 as a gate outer lead, and the connector 52 as a gate connector can also be suppressed. Therefore, in the reflow process of the connecting members 41 to 45, the positions of the connectors 51 and 52 are less likely to shift, leading to improved reliability and suppression of short circuits.

[0053] (Second Embodiment) Figure 8 is a cross-sectional view showing an example of the configuration of the semiconductor device 100 according to the second embodiment. Figure 8 shows a cross-section of the source region corresponding to Figure 4 of the first embodiment. In the second embodiment, the multiple portions p3 of the second conductive member 22 are separated at the top by grooves TR, but are connected to each other at the bottom. That is, the multiple portions p3 are formed as a first region (mesa region) separated by grooves TR. The grooves TR can be formed by half-etching the conductive member 22. Thus, although the multiple portions p3 are not separated along the entire Z direction, the connecting members 42 are provided between each of the multiple portions p1 and the multiple portions p3, similar to those in the first embodiment, and are separated. The connecting members 42 are not provided within the grooves TR.

[0054] Figure 9 is a cross-sectional view showing an example of the configuration of the semiconductor device 100 according to the second embodiment. Figure 9 shows a cross-section of the gate region corresponding to Figure 6 of the first embodiment. In the second embodiment, the multiple portions p3_3 of the third conductive member 23 are separated at the top by grooves TR, but are connected to each other at the bottom. That is, the multiple portions p3_3 are formed as a second region (mesa region) separated by grooves TR. Thus, although the multiple portions p3_3 are not separated along the entire Z direction, the fourth connecting member 45 is provided between each of the multiple portions p1_3 and the multiple portions p3_3, similar to that of the first embodiment, and is separated. The connecting member 45 is not provided within grooves TR.

[0055] Other configurations of the second embodiment may be the same as the corresponding configurations of the first embodiment. This allows the second embodiment to achieve the same effects as the first embodiment.

[0056] (Third embodiment) Figure 10 is a cross-sectional view showing an example of the configuration of a semiconductor device 100 according to the third embodiment. Figure 10 shows a cross-section of the source region corresponding to Figure 4 of the first embodiment. In the third embodiment, the second conductive member 22 is not separated into a plurality of parts p3, but is connected to each other as a whole. That is, the surface of the second conductive member 22 is formed to be substantially flat. In this case, it is sufficient that the connecting member 42 can maintain a separated state in the plurality of parts p1 during the reflow process. For example, solder resist SR may be applied to the surface of the conductive member 22 between the plurality of parts p1. As a result, the connecting member 42 is not formed on the solder resist SR, but is provided only under the plurality of parts p1. That is, the connecting member 42 is selectively provided between the plurality of parts p1 of the first connector 51 and the conductive member 22, and is separated from each other.

[0057] Figure 11 is a cross-sectional view showing an example configuration of the semiconductor device 100 according to the third embodiment. Figure 11 shows a cross-section of the gate region corresponding to Figure 6 of the first embodiment. In the third embodiment, the third conductive member 23 is not separated into a plurality of parts p3_3, but is connected to each other as a whole. That is, the surface of the third conductive member 23 is formed to be substantially flat. In this case, it is sufficient that the connecting member 45 can maintain a separated state in the plurality of parts p1_3 during the reflow process. For example, solder resist SR may be applied to the surface of the conductive member 23 between the plurality of parts p1_3. As a result, the connecting member 45 is not formed on the solder resist SR, but is provided only under the plurality of parts p1_3. That is, the connecting member 45 is selectively provided between the plurality of parts p1_3 of the second connector 52 and the conductive member 23, and is separated from each other.

[0058] Other configurations of the third embodiment may be the same as the corresponding configurations of the first embodiment. In this way, it is sufficient that the connecting members 42 and 45 can maintain a separated state in multiple parts p1 and p1_3 during the reflow process. As a result, the third embodiment can obtain the same effects as the first embodiment.

[0059] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims and their equivalents. [Explanation of Symbols]

[0060] 100 Semiconductor device, 10 Semiconductor chip, 21 First conductive member, 22 Second conductive member, 23 Third conductive member, 51 First connector, 52 Second connector, 41-45 Connecting members, 30 Resin part, 11 Drain electrode, 12 Source electrode, 13 Gate electrode, 10s Semiconductor layer

Claims

1. A semiconductor chip having a first surface and a second surface opposite to the first surface, A first conductive member facing and electrically connected to the first electrode on the first surface of the semiconductor chip, The semiconductor chip and the second conductive member spaced apart from the first conductive member, The semiconductor chip, the third conductive member spaced apart from the first and second conductive members, A first connector that faces the second electrode on the second surface of the semiconductor chip and electrically connects the second electrode and the second conductive member, A second connector facing the third electrode on the second surface of the semiconductor chip and electrically connecting the third electrode and the third conductive member, A first connecting member that connects the first connector and the second surface of the semiconductor chip, The device comprises a second connecting member that connects the first connector and the second conductive member, The first connector has a plurality of first protrusions that project in a first direction from the first conductive member to the second conductive member, The second connecting member is provided correspondingly between the plurality of first protrusions and the second conductive member, A third connecting member that connects the second connector and the second surface of the semiconductor chip, The present invention further comprises a fourth connecting member that connects the second connector and the third conductive member, The second connector has a plurality of second protrusions projecting in a second direction from the first conductive member to the third conductive member, The third conductive member protrudes in the direction opposite to the second direction and has a plurality of third protrusions corresponding to each of the plurality of second protrusions, The fourth connecting member is provided correspondingly between the plurality of second protrusions and the plurality of third protrusions in the semiconductor device.

2. The semiconductor device according to claim 1, wherein the second connecting member corresponding to each of the plurality of first protrusions is separated.

3. The semiconductor device according to claim 1, wherein the fourth connecting member corresponding to each of the plurality of second protrusions is separated.

4. The second conductive member protrudes in the direction opposite to the first direction and has a plurality of fourth protrusions corresponding to the first protrusion, The semiconductor device according to claim 1, wherein the second connecting member is provided between the plurality of first protrusions and the plurality of fourth protrusions.

5. A semiconductor chip having a first surface and a second surface opposite to the first surface, A first conductive member facing and electrically connected to the first electrode on the first surface of the semiconductor chip, The semiconductor chip and the second conductive member spaced apart from the first conductive member, The semiconductor chip, the third conductive member spaced apart from the first and second conductive members, A first connector that faces the second electrode on the second surface of the semiconductor chip and electrically connects the second electrode and the second conductive member, A second connector facing the third electrode on the second surface of the semiconductor chip and electrically connecting the third electrode and the third conductive member, A first connecting member that connects the first connector and the second surface of the semiconductor chip, The device comprises a second connecting member that connects the first connector and the second conductive member, The first connector has a plurality of first protrusions that project in a first direction from the first conductive member to the second conductive member, The second connecting member is provided correspondingly between the plurality of first protrusions and the second conductive member, The second conductive member has a first groove between a plurality of first regions corresponding to the plurality of first protrusions, The semiconductor device wherein the second connecting member is provided between the plurality of first protrusions and the plurality of first regions, and is not provided in the first groove.

6. The semiconductor device according to claim 4, wherein, in a cross section perpendicular to the first direction, the first width of the surface on which the first projection faces the third projection is smaller than the second width of the surface on which the third projection faces the first projection.

7. The semiconductor device according to claim 1, wherein the second connecting member covers the bottom surface of the first protrusion and the lower part of the side surface.

8. The second electrode is a source electrode, The semiconductor device according to claim 1 or claim 5, wherein the third electrode is a gate electrode.

9. The semiconductor device according to claim 1 or claim 5, wherein the first connector has a protrusion that contacts the second connecting member.

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