Method for determining defective areas

A non-destructive method using two-dimensional detectors and image processing techniques addresses the limitations of existing methods by accurately identifying I-rich regions in silicon single crystal substrates, enhancing detection precision and reducing defective product shipment.

JP7856034B2Active Publication Date: 2026-05-11SHIN ETSU HANDOTAI CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
SHIN ETSU HANDOTAI CO LTD
Filing Date
2023-03-28
Publication Date
2026-05-11

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Abstract

To provide a method which non-destructively and easily determines a defect region of a silicon single crystal substrate.SOLUTION: A determination method of an I-rich region of a silicon single crystal substrate includes: an image acquisition step which irradiates a surface of a silicon single crystal substrate having at least one mirror-polished (100) surface with laser light in a low-angle mode by a surface inspection device, detects scattered light and optical luminescence from a defect on the surface of the silicon single crystal substrate by a two-dimensional detector and acquires an image for the defect; an image determination step which determines whether the acquired image has features seen in the I-rich region; and a defect region determination step which calculates an index of the defect from the image when the image determination step determines that the image has the features seen in the I-rich region and determines a region whose index of the defect exceeds a predetermined threshold as the I-rich region.SELECTED DRAWING: Figure 1
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