Method for manufacturing a solid-state battery, and negative electrode active material layer

Treating silicon particles with hydrogen fluoride and applying them with a binder and electrolyte under controlled pressure addresses the high resistance and cracking issues in solid-state battery layers, enhancing their strength and performance.

JP7856041B2Active Publication Date: 2026-05-11TOYOTA JIDOSHA KK
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
TOYOTA JIDOSHA KK
Filing Date
2023-04-20
Publication Date
2026-05-11

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Abstract

To provide a method of manufacturing a solid-state battery, the method enabling reduction of the electric resistance thereof by using silicon anode active material particles processed by hydrogen fluoride, and furthermore the method enabling improvement of strength of an anode active material layer having the silicon anode active material particles, to provide an anode active material layer for use in the manufacturing of such a solid-state battery, to provide a method of manufacturing a solid-state battery which has small electric resistance and in which cracking hardly occurs in an anode active material layer during charging, and to provide an anode active material layer for use in manufacturing of such a solid-state battery.SOLUTION: A method of manufacturing a solid-state battery includes: providing silicon particles which are provided by hydrogen fluoride; obtaining an anode mixture slurry by dispersing the silicon particles, a binder and a solid electrolyte in an organic solvent; obtaining an anode active material layer by applying the anode mixture slurry to a substrate and then drying the anode mixture slurry; and laminating and pressing the anode active material layer and the solid electrolyte layer. In the method of manufacturing the solid-state battery, a ratio of a mass of the binder in the anode active material layer with respect to a mass of the silicon particles is 0.6 mass% to 3.0 mass% and a roll press pressure in the press is 1.0 t / cm or more.SELECTED DRAWING: None
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