Semiconductor devices and semiconductor modules
The semiconductor device design with a conductive member and rising portion ensures uniform heat dissipation from both sides, addressing thickness variations and enhancing heat transfer efficiency in stacked configurations.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- SHINDENGEN ELECTRIC MANUFACTURING CO LTD
- Filing Date
- 2022-01-13
- Publication Date
- 2026-05-11
AI Technical Summary
Conventional semiconductor devices face challenges in achieving uniform heat dissipation due to variations in conductive bonding material thickness, leading to inefficient heat transfer and potential heat buildup, especially when multiple devices are arranged in a single heat sink.
The semiconductor device design includes a first conductive member with a die pad portion and a rising portion that extends upward, exposing the die pad's opposite side and at least a portion of the upper heat dissipation area from the molded resin, allowing heat dissipation from both top and bottom sides, and ensuring consistent thickness regardless of bonding material variations.
This design achieves high heat dissipation performance by uniformly dissipating heat from both sides of the semiconductor device, preventing uneven heat distribution and ensuring efficient heat transfer even when multiple devices are stacked, thus maintaining consistent thickness and heat sink alignment.
Smart Images
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Abstract
Description
Technical Field
[0001] The present invention relates to a semiconductor device and a semiconductor module.
Background Art
[0002] Conventionally, a semiconductor device capable of radiating heat from both the upper side and the lower side has been known (see, for example, Patent Document 1).
[0003] FIG. 9 is a cross-sectional view showing a conventional semiconductor device 900. As shown in FIG. 9, the conventional semiconductor device 900 includes a first conductive member 910, a chip 920 disposed on the first conductive member 910 via a first conductive bonding material S1 (e.g., solder), a second conductive member 930 disposed on the electrodes of the chip 920 via a second conductive bonding material S2 (e.g., solder), and a mold resin 940 that seals the first conductive member 910, the chip 920, and the second conductive member 930. The lower surface of the first conductive member 910 and the upper surface of the second conductive member 930 are exposed from the mold resin 940.
[0004] According to the conventional semiconductor device 900, since the lower surface of the first conductive member 910 and the upper surface of the second conductive member 930 are exposed from the mold resin 940, heat generated from the chip 920 is efficiently transferred to the outside through the first conductive member 910 or the second conductive member 930. Therefore, the semiconductor device 900 has high heat dissipation.
[0005] In a semiconductor module using such a semiconductor device, it is generally performed to arrange a plurality of semiconductor devices side by side and dispose a single common heat sink. FIG. 10 is a cross-sectional view showing a conventional semiconductor module 901. In the conventional semiconductor module 901, as shown in FIG. 10, a plurality (two in FIG. 10) of conventional semiconductor devices 900a and 900b are arranged side by side, and a single common heat sink 960 is disposed via insulating heat transfer members 950a and 950b (e.g., insulating grease) respectively disposed above the semiconductor devices 900a and 900b. [Prior art documents] [Patent Documents]
[0006] [Patent Document 1] Japanese Patent Publication No. 2021-72769 [Overview of the Initiative] [Problems that the invention aims to solve]
[0007] Incidentally, in the manufacturing of semiconductor devices, it is practically difficult to control the thickness of conductive bonding material (solder). In conventional semiconductor devices 900, the first conductive member 910, conductive bonding material S1, chip 920, conductive bonding material S2, and second conductive member 930 are stacked in this order from the bottom. The sum of the thicknesses of these members is equal to the thickness of the semiconductor device 900 (the thickness from the bottom surface of the first conductive member 910 to the top surface of the second conductive member 930). Therefore, if there is variation in the thickness of the conductive bonding materials S1 and S2, it will result in variation in the overall thickness of the semiconductor device. Consequently, when multiple semiconductor devices are arranged side by side and one heat sink is placed on top of them (see Figure 10), it is necessary to adjust the thickness of the insulating heat transfer members 950a and 950b placed between each semiconductor device 900a and 900b and the heat sink 960 to prevent the heat sink 960 from tilting.
[0008] For example, in Figure 10, of the two semiconductor devices 900a and 900b placed side by side, the conductive bonding materials S1 and S2 of the left semiconductor device 900a have variations in thickness and are thinner than those of the right semiconductor device 900b. In this case, the overall thickness H1 of semiconductor device 900a is thinner than the overall thickness H2 of semiconductor device 900b, and to compensate for this, the thickness I1 of the insulating heat transfer member 950a is thicker than the thickness I2 of the insulating heat transfer member 950b.
[0009] However, since the heat transfer properties of insulating heat transfer members are generally lower than those of the metal second conductive member 930 and the heat sink 960, in semiconductor devices (see semiconductor device 900a in Figure 10) that are placed between a relatively thick insulating heat transfer member and the heat sink 960, it becomes difficult to efficiently dissipate heat from the top surface of the semiconductor device, and thus it becomes difficult to achieve high heat dissipation performance.
[0010] Furthermore, semiconductor devices with a relatively thick insulating heat transfer element between them and the heat sink 960 are less efficient at dissipating heat than those with a relatively thin insulating heat transfer element between them and the heat sink 960. This can lead to heat buildup in certain semiconductor devices, resulting in uneven heat dissipation and preventing proper heat dissipation.
[0011] Therefore, the present invention has been made to solve the above-mentioned problems, and aims to provide a semiconductor device and semiconductor module that have high heat dissipation capabilities and that make it easy to perform appropriate heat dissipation without uneven heat dissipation even when multiple semiconductor devices are arranged in a single heat sink. [Means for solving the problem]
[0012] The semiconductor device of the present invention comprises a first conductive member having a die pad portion, a rising portion that bends upward from the die pad portion, and an upper heat dissipation portion connected to the tip of the rising portion; a chip disposed on the die pad portion via a first conductive bonding material; a second conductive member disposed on the chip via a second conductive bonding material; and a molded resin formed on the first conductive member to a height position that fills the surface of the second conductive member opposite to the surface on which the chip is disposed, wherein the surface of the die pad portion opposite to the surface on which the chip is disposed is exposed from the molded resin, and at least a part of the upper heat dissipation portion is exposed from the molded resin. [Effects of the Invention]
[0013] According to the semiconductor device of the present invention, the side of the die pad opposite to the side on which the chip is placed is exposed from the molded resin, allowing heat to be dissipated from the bottom side of the semiconductor device. Furthermore, at least a portion of the top side heat dissipation area is exposed from the molded resin, allowing heat to be dissipated from the top side of the semiconductor device. Therefore, heat can be dissipated from both the top and bottom sides of the semiconductor device, resulting in a semiconductor device with high heat dissipation performance.
[0014] Furthermore, according to the semiconductor device of the present invention, since the first conductive member is provided with a molded resin formed to a height position that fills the surface of the second conductive member opposite to the surface on which the chip is placed, even if there are variations in the thickness of the conductive bonding material, there will be no variations in the overall thickness of the semiconductor device. Therefore, even when multiple semiconductor devices are arranged side by side and one heat sink is placed on top of them, it is not necessary to make the thickness of the insulating heat transfer member on top of the semiconductor device thicker than necessary, and heat can be efficiently dissipated from the top surface of the semiconductor device. Therefore, it can have high heat dissipation performance from this viewpoint as well. In addition, it is possible to prevent heat from accumulating in a particular semiconductor device and to dissipate heat uniformly, so uneven heat dissipation is less likely to occur and appropriate heat dissipation can be achieved. [Brief explanation of the drawing]
[0015] [Figure 1] This figure shows a semiconductor device 1 according to Embodiment 1. Figure 1(a) shows a perspective view of the semiconductor device 1, and Figure 1(b) shows a cross-sectional view AA of the semiconductor device 1. [Figure 2] This figure illustrates the manufacturing method of the semiconductor device 1 according to Embodiment 1. Figures 2(a-1) to 2(f-1) show schematic perspective views of each process, and Figures 2(a-2) to 2(f-2) show schematic cross-sectional views of each process. The area enclosed by the dashed line shows the rising portion 12 on the side X2. [Figure 3] This is a cross-sectional view showing a semiconductor module 100 according to Embodiment 1. [Figure 4]This is a cross-sectional view shown to explain the semiconductor device 2 according to Embodiment 2. FIG. 2(a) shows a cross-sectional view of the semiconductor device 2, and FIG. 2(b) shows a cross-sectional view of the semiconductor device according to Comparative Example 1. [Figure 5] This is a cross-sectional view showing the semiconductor device 3 according to Modification 1. [Figure 6] This is a cross-sectional view showing the semiconductor device 4 according to Modification 2. [Figure 7] This is a cross-sectional view showing the semiconductor device 5 according to Modification 3. [Figure 8] This is a cross-sectional view showing the semiconductor device 6 according to Modification 4. [Figure 9] This is a cross-sectional view showing the conventional semiconductor device 900. Note that reference numeral 970 indicates a substrate. [Figure 10] This is a cross-sectional view showing the conventional semiconductor module 901.
Embodiments for Carrying Out the Invention
[0016] Hereinafter, the semiconductor device and semiconductor module of the present invention will be described based on the embodiments shown in the drawings. Note that the embodiments described below do not limit the invention according to the claims. Also, not all of the elements and combinations thereof described in the embodiments are essential for the solution means of the present invention.
[0017] [Embodiment 1] 1. Configuration of the semiconductor device 1 according to Embodiment 1 FIG. 1 is a cross-sectional view showing a semiconductor device 1 according to Embodiment 1. As shown in FIG. 1(a), the semiconductor device 1 according to Embodiment 1 has a substantially rectangular shape having sides X1 and X2 facing each other and sides X3 and X4 facing each other when viewed in plan, a mold resin 40 disposed from the central portion toward the side X1, a die pad portion 11 disposed on the bottom surface of the mold resin 40, a flat first upper surface side heat radiating portion 13 extending to the side X2 of the mold resin 40, a flat second upper surface side heat radiating portion 14 extending to the side X3 of the mold resin 40, and a flat third upper surface side heat radiating portion 15 extending to the side X4 of the mold resin 40, and a first conductive member 10. A rising portion 12 (see FIG. 1(b)) is formed between the mold resin 40 and the first upper surface side heat radiating portion 13, the second upper surface side heat radiating portion 14, and the third upper surface side heat radiating portion 15, and the mold resin 40 is filled in a recess formed by the die pad portion 11 and the rising portion 12. The second conductive member 30 and the third conductive member 31 extend from the side surface on the side X1 of the mold resin 40.
[0018] As shown in FIG. 1, the semiconductor device 1 according to Embodiment 1 includes a first conductive member 10, a chip 20, a second conductive member 30, and a mold resin 40.
[0019] The first conductive member 10 has a die pad portion 11, a rising portion 12, a first upper surface side heat radiating portion 13, a second upper surface side heat radiating portion 14, and a third upper surface side heat radiating portion 15. The first conductive member 10 is integrally formed from a plate-like member made of metal. Note that "integrally formed" means forming by performing processing such as molding, cutting, or (and) pressing on the same member.
[0020] The die pad portion 11 extends flatly from the central portion toward the side X1. A die pad surface for disposing the chip 20 is formed on one surface side of the die pad portion 11, and the other surface side is exposed from the mold resin 40.
[0021] The rising portion 12 is bent upward from the end on the side X2 of the die pad portion 11, extends to an intermediate height position in the height of the semiconductor device 1, bends in a step-like manner at its tip, and extends upward to the height of the surface of the mold resin 40. It is also bent upward from the ends on the side X3 and side X4 of the die pad portion 11, and extends to the height of the surface of the mold resin 40.
[0022] The first upper heat dissipation section 13 is connected to the edge X2 end of the rising section 12 on the edge X2 side, and extends from there to edge X2 in a flat plate shape, with its upper surface exposed from the molded resin 40. The first upper heat dissipation section 13 is connected to the heat sink 60 via insulating heat transfer members 50a and 50b, which will be described later. The second upper heat dissipation section 14 is connected to the edge X3 end of the rising section 12 on the edge X3 side, and extends from there to edge X3 in a flat plate shape, with its upper surface exposed from the molded resin 40. The second upper heat dissipation section 14 is connected to the heat sink 60 via insulating heat transfer members 50a and 50b, which will be described later. The third upper heat dissipation section 15 is connected to the edge X4 end of the rising section 12 on the edge X4 side, and extends from there to edge X4 in a flat plate shape, with its upper surface exposed from the molded resin 40. The third upper heat dissipation section 15 is connected to the heat sink 60 via insulating heat transfer members 50a and 50b, which will be described later.
[0023] The chip 20 is placed on the die pad surface of the die pad portion 11 via a first conductive bonding material S1. The chip 20 is a MOSFET having a first main electrode (e.g., a source electrode) and a secondary electrode (e.g., a gate electrode) on the front side, and a second main electrode (e.g., a drain electrode) on the back side. The first main electrode (not shown) of the chip 20 is connected to the outside via a second conductive member 30. The secondary electrode 21 is connected to the outside via a third conductive member 31. The second main electrode (not shown) is connected to the substrate 70 via a first conductive member 10 (see Figure 3). Note that the chip 20 may be a 3-terminal element other than a MOSFET (e.g., an IGBT), a 2-terminal element (e.g., a diode), or an element with 4 or more terminals (e.g., a thyristor, triac, etc.).
[0024] The second conductive member 30 is a clip lead that is placed on the first main electrode (source electrode) of the chip 20 via a second conductive bonding material S2. The second conductive member 30 is a metal plate-shaped member that extends toward the side X1 when viewed in plan (i.e., the side where the rising portion 12 and the upper heat dissipation portions 13, 14, 15 are not formed). The third conductive member (not shown) is a clip lead that is placed on the auxiliary electrode 21 (gate electrode) of the chip 20 via a third conductive bonding material S3. The third conductive member 31 is a metal plate-shaped member that extends toward the side X1 when viewed in plan and is substantially parallel to the second conductive member 30.
[0025] The molding resin 40 can be any suitable insulating resin.
[0026] The first conductive bonding material S1 is placed between the first conductive member 10 and the second main electrode of the tip 20, and bonds the first conductive member 10 and the second main electrode of the tip 20. The second conductive bonding material S2 is placed between the first main electrode of the tip 20 and the second conductive member 30, and bonds the first main electrode of the tip 20 and the second conductive member 30. The third conductive bonding material (not shown) is placed between the auxiliary electrode of the tip 20 and the third conductive member 31, and bonds the auxiliary electrode 21 of the tip 20 and the third conductive member 31. In Embodiment 1, solder is used for the first conductive bonding material S1, the second conductive bonding material S2, and the third conductive bonding material S3, but other appropriate materials such as metal nanomaterials or adhesives can be used.
[0027] 2. Method for manufacturing the semiconductor device 1 in Embodiment 1 Next, the manufacturing method of the semiconductor device 1 in Embodiment 1 will be described. Figure 2 is a diagram illustrating the manufacturing method of the semiconductor device 1 in Embodiment 1. In the manufacturing method of the semiconductor device 1 in Embodiment 1, as shown in Figure 2, first, a flat metal plate 10' is prepared (see Figures 2(a-1) and 2(a-2)), and the sides X2, X3, and X4 of the region corresponding to the die pad portion 11 are punched upward by a stamping process (hammering) of the metal plate 10'. The portions punched out by the stamping process become the rising portion 12, the first upper surface heat dissipation portion 13, the second upper surface heat dissipation portion 14, and the third upper surface heat dissipation portion 15 (see Figures 2(b-1) and 2(b-2)). Next, the region corresponding to the die pad portion 11 is pressed by a press process to form the die pad portion 11 (see Figures 2(c-1) and 2(c-2)). At this time, the rising portion 12 on the side X2 becomes a stepped shape. Next, the chip 20 is placed on the die pad portion 11 via a first conductive bonding material S1 (for example, solder) (see Figures 2(d-1) and 2(d-2)). Next, the second conductive member 30 and the third conductive member 31 are placed on the first main electrode and sub-electrode 21 of the chip 20 via a second conductive bonding material and a third conductive bonding material (see Figures 2(e-1) and 2(e-2)). Next, the first conductive member 10, the chip 20 and the second conductive member 30 are placed in a reflow furnace and reflowed to bond the first conductive member 10 and the chip 20 with the first conductive bonding material S1, the second conductive member 30 and the first main electrode of the chip 20 with the second conductive bonding material S2, and the third conductive member 31 and the sub-electrode 21 of the chip 20 with the third conductive bonding material (not shown). Next, using a mold, the mold resin 40 is filled into the recess, with the die pad portion 11 as the bottom surface and the rising portion 12 as the side wall, thereby resin sealing (see Figures 2(f-1) and 2(f-2)). At this time, the second conductive member 30 within the recess is embedded in the mold resin 40. Also, since the rising portion 12 serves as the side wall, the mold resin 40 and the rising portion 12 are in contact. In this way, the device 1 according to Embodiment 1 can be manufactured.
[0028] 3. Configuration of the semiconductor module 100 according to Embodiment 1 Next, the semiconductor module 100 according to Embodiment 1 will be described. Figure 3 is a cross-sectional view showing the semiconductor module 100 according to Embodiment 1. As shown in Figure 3, the semiconductor module 100 according to Embodiment 1 comprises two semiconductor devices 1a and 1b according to Embodiment 1, insulating heat transfer members 50a and 50b arranged on each semiconductor device 1a and 1b, and a common heat sink 60 arranged on the insulating heat transfer members 50a and 50b.
[0029] In the semiconductor module 100 according to Embodiment 1, two semiconductor devices 1a and 1b are arranged side by side on a substrate 70. The first conductive member 10a is connected to a first wiring (not shown) formed on the surface of the substrate 70, and the first conductive member 10b is connected to a second wiring (not shown) that is different from the first wiring (not shown). The second conductive member 30a and the second conductive member 30b are also each connected to predetermined wiring (not shown) on the substrate.
[0030] The insulating heat transfer members 50a and 50b are insulating members (for example, insulating grease) that ensure insulation between the metal first conductive member 10 and the heat sink 60, and also transfer heat transmitted from the upper heat dissipation sections 13, 14, and 15 to the heat sink 60.
[0031] The heatsink 60 is, for example, a metal heat dissipation fin that releases the heat generated by the chip 20 to the outside of the semiconductor device.
[0032] In the semiconductor module 100 according to Embodiment 1, the thickness of the molded resin 40 formed using a mold is constant regardless of the thickness of the first conductive bonding material S1 and the second conductive bonding material S2. Therefore, the thickness H1 of semiconductor device 1a and the thickness H2 of semiconductor device 1b are approximately the same. Furthermore, since most of the insulating heat transfer members 50a and 50b are placed on the molded resin 40, the thickness I1 of the insulating heat transfer member 50a is approximately the same as the thickness I2 of the insulating heat transfer member 50b, regardless of the thickness of the first conductive bonding material S1 and the second conductive bonding material S2.
[0033] For example, as shown in Figure 3, even if the thickness of the first conductive bonding material S1 and the second conductive bonding material S2 of the semiconductor device 1a on the left is thinner than the thickness of the first conductive bonding material S1 and the second conductive bonding material S2 of the semiconductor device 1b on the right, the thickness of the molded resin 40 formed using the mold remains constant. Therefore, the thickness H1 of the semiconductor device 1a and the thickness H2 of the semiconductor device 1b are approximately the same. Therefore, the thickness of the insulating heat transfer member 50a is the same as the thickness of the insulating heat transfer member 50b, and the heat sink 60 can be placed parallel to the semiconductor devices 1a and 1b.
[0034] In the semiconductor module 100 according to Embodiment 1, the heat generated in the chips 20a and 20b is transferred to the substrate 70 via the die pad portions of the first conductive bonding material S1 and the first conductive members 10a and 10b, and is released to the outside from the lower side of the semiconductor devices 1a and 1b. It is also transferred from the die pad portions to the heat sink 60 via the rising portion 12, the upper heat dissipation portions 13a and 13b, and the insulating heat transfer members 50a and 50b, and is released to the outside from the upper side of the semiconductor devices 1a and 1b. Therefore, heat can be dissipated from both the upper and lower sides of the semiconductor devices 1a and 1b. In addition, the heat generated in the chips 20a and 20b is also transferred to the second conductive members 30a and 30b via the second conductive bonding material S2 from the upper side of the chips 20a and 20b. Since the second conductive member 30 is connected to the wiring on the substrate 70 at a position sufficiently separated from the die pad portion 11, the heat transferred to the second conductive members 30a and 30b is dissipated to the outside from the underside of the semiconductor module 100 via the wiring on the substrate 70. In addition, a portion of the heat transferred to the second conductive members 30a and 30b is transferred to the heat sink 60 via the molding resin 40a and 40b and the insulating heat transfer members 50a and 50b, and released to the outside from the upper side of the semiconductor devices 1a and 1b.
[0035] 4. Effects of the semiconductor device 1 and semiconductor module 100 according to Embodiment 1 According to the semiconductor device 1 of Embodiment 1, the side of the die pad portion 11 opposite to the side on which the chip 20 is placed is exposed from the molded resin 40, allowing heat to be dissipated from the bottom side of the semiconductor device 1. Also, at least a portion of the upper heat dissipation portion 13 is exposed from the molded resin 40, allowing heat to be dissipated from the top side of the semiconductor device. Therefore, heat can be dissipated from both the top and bottom sides of the semiconductor device, resulting in a semiconductor device with high heat dissipation performance.
[0036] Furthermore, according to the semiconductor device 1 of Embodiment 1, since the first conductive member 10 is provided with a molded resin 40 formed to a height position that fills the surface of the second conductive member 30 opposite to the surface on which the chip 20 is placed, even if there are variations in the thickness of the conductive bonding materials S1 and S2, there will be no variation in the overall thickness of the semiconductor device. Therefore, even when multiple semiconductor devices 1a and 1b are arranged side by side and one heat sink 60 is placed on top of them, there is no need to make the thickness of the insulating heat transfer members 50a and 50b on top of the semiconductor devices 1a and 1b thicker than necessary, and heat can be efficiently dissipated from the top surface of the semiconductor device. Therefore, high heat dissipation performance can be achieved from this viewpoint as well. In addition, it is possible to prevent heat from accumulating in a particular semiconductor device and to dissipate heat uniformly, so uneven heat dissipation is less likely to occur and appropriate heat dissipation can be achieved.
[0037] Furthermore, according to the semiconductor device 1 of Embodiment 1, the height position of the upper surface of the upper heat dissipation parts 13, 14, and 15 is the same as the height position of the molded resin 40, so the upper heat dissipation parts 13, 14, and 15 and the insulating heat transfer members 50a and 50b are in direct contact. Therefore, the heat generated from the chip 20 can be efficiently transferred to the heat sink 60.
[0038] Furthermore, according to the semiconductor device 1 of Embodiment 1, the rising portion 12 and the upper heat dissipation portions 13, 14, and 15 are formed in predetermined portions (sides X2, X3, and X4) of the position surrounding the chip 20 when viewed in plan, so that the heat transferred from the chip 20 to the die pad portion 11 can be efficiently transferred to the upper side.
[0039] Furthermore, according to the semiconductor device 1 of Embodiment 1, the second conductive member 30 extends in a predetermined direction when viewed in plan, and the rising portion 12 and the upper heat dissipation portion 13 are located on the opposite side from the side to which the second conductive member 30 extends when viewed in plan. Therefore, the heat transfer path in which heat generated from the chip 20 is transmitted upward from the lower side of the chip 20 via the conductive bonding material S1, die pad portion 11, rising portion 12, and upper heat dissipation portion 13 does not interfere with (get in the way of) the heat transfer path in which heat generated from the chip 20 is transmitted from the upper side of the chip 20 to the substrate 70 via the conductive bonding material S2 and the second conductive member 30. In addition, since the second conductive member 30 is connected to the wiring on the substrate 70 at a position sufficiently separated from the die pad portion 11, the heat transmitted from the upper side of the chip 20 can be efficiently released to the outside via the substrate 70. Therefore, the heat generated in the chip 20 can be efficiently dissipated from both the upper and lower sides of the chip 20.
[0040] Incidentally, if the die pad portion 11, the rising portion 12, and the upper heat dissipation portions 13, 14, and 15 of the first conductive member 10 are not integrally formed, it is necessary to join them with an adhesive or the like. However, adhesives generally have inferior heat conductivity compared to the metal material of the first conductive member 10, and the heat conductivity of the joint may decrease. Therefore, it may be difficult to efficiently transfer heat. In contrast, according to the semiconductor device 1 of Embodiment 1, since the first conductive member 10 is integrally formed, there is no need to join them with an adhesive or the like, and the heat conductivity does not decrease due to the adhesive or the like. Therefore, heat can be transferred efficiently.
[0041] Furthermore, according to the semiconductor device 1 of Embodiment 1, since the mold resin 40 is in contact with the rising portion 12, it can be used as a side wall when resin sealing the rising portion 12 without having to prepare a separate side wall member during the semiconductor device manufacturing process. Also, because the mold resin 40 is in contact with the rising portion 12, the contact area between the mold resin 40 and the rising portion 12 is increased, resulting in high adhesion, which causes the mold to lock and makes it difficult for the mold resin 40 to peel off from the first conductive member 10.
[0042] Furthermore, according to the semiconductor device 1 of Embodiment 1, since the heat sink 60 is positioned above the molded resin 40 and the upper heat dissipation sections 13, 14, and 15 via insulating heat transfer members 50a and 50b, heat can be efficiently released to the outside from above the semiconductor device via the heat sink 60. In addition, slight variations in the thicknesses H1 and H2 of each semiconductor device can be absorbed, and the heat sinks 60 can be arranged in parallel.
[0043] Furthermore, according to the semiconductor module 100 of Embodiment 1, multiple semiconductor devices 1a and 1b are arranged side by side, and a common heat sink 60 is positioned above the mold resin 40 and the upper heat dissipation portion 13 of the semiconductor devices 1a and 1b via insulating heat transfer members 50a and 50b. This allows heat generated from multiple semiconductor devices to be released to the outside collectively. In addition, slight variations in the thickness H1 and H2 of each semiconductor device can be absorbed, and the heat sinks 60 can be arranged in parallel. Moreover, since the insulating heat transfer members 50a and 50b are formed with a uniform thickness, uneven heat dissipation is less likely to occur, and appropriate heat dissipation can be achieved.
[0044] [Embodiment 2] Figure 4 is a cross-sectional view showing a semiconductor device 2 according to Embodiment 2. The semiconductor device 2 according to Embodiment 2 basically has the same configuration as the semiconductor device 1 according to Embodiment 1, but differs from the semiconductor device 1 according to Embodiment 1 in that the height position of the upper surface of the upper heat dissipation part is higher than the height position of the upper surface of the molded resin (see Figure 4(a)).
[0045] Thus, the semiconductor device 2 according to Embodiment 2 differs from the semiconductor device 1 according to Embodiment 1 in that the height position of the upper surface of the upper heat dissipation part is higher than the height position of the upper surface of the molded resin. However, similar to the semiconductor device 1 according to Embodiment 1, it has high heat dissipation performance by dissipating heat from both the upper and lower sides of the semiconductor device. Furthermore, even when dissipating heat from both the upper and lower sides of the semiconductor device, heat can be efficiently dissipated from the upper surface of the semiconductor device. In addition, even when multiple semiconductor devices are arranged in a row and a single heat sink is placed on top of each other, the semiconductor device can perform appropriate heat dissipation without uneven heat dissipation.
[0046] However, if the height of the upper surface of the upper heat dissipation section 13 is lower than the height of the molded resin 40 (see Figure 4(b)), resin burrs B may form on the upper surface of the upper heat dissipation section 13. These resin burrs B may hinder heat transfer between the upper heat dissipation section 13 and the insulating heat transfer members 50a and 50b, making it difficult to efficiently transfer the heat generated from the chip 20 to the heat sink 60. In contrast, according to the semiconductor device 2 of Embodiment 2, since the height of the upper surface of the upper heat dissipation section is higher than the height of the molded resin, the upper heat dissipation section 13 and the insulating heat transfer members 50a and 50b are in direct contact. Therefore, heat transfer between the upper heat dissipation section 13 and the insulating heat transfer members 50a and 50b is not hindered by the resin burrs B of the molded resin 40, and the heat generated from the chip 20 can be efficiently transferred to the heat sink 60.
[0047] Furthermore, the semiconductor device 2 according to Embodiment 2 has the same configuration as the semiconductor device 1 according to Embodiment 1, except that the height position of the upper surface of the upper heat dissipation portion is higher than the height position of the upper surface of the molded resin, and therefore possesses the corresponding effects of the semiconductor device 1 according to Embodiment 1.
[0048] Although the present invention has been described above based on the embodiments described above, the present invention is not limited to the embodiments described above. It can be implemented in various forms without departing from the spirit of the invention, and for example, the following modifications are also possible.
[0049] (1) The positions, sizes, etc. described in each of the above embodiments (including each modified example; the same applies hereinafter) are illustrative and can be changed within the scope that does not impair the effects of the present invention.
[0050] (2) In the above embodiments, the rising portion 12 is made in a stepped shape (stepped shape), but the present invention is not limited thereto. The rising portion 12 does not have to form a step midway up from the die pad portion 11 (see semiconductor device 3 according to modified example 1, Figure 5). Also, the tip portion of the rising portion 12 may be bent toward the side X1 (left side in Figure 6) (see semiconductor device 4 according to modified example 2, Figure 6). In this case, the portion bent toward the side X1 (left side in Figure 6) becomes the upper heat dissipation portion 13b. By adopting such a configuration, the area in contact with the insulating heat transfer member 50 is increased, so that heat can be transferred more efficiently.
[0051] (3) In each of the above embodiments, the rising portion and the upper heat dissipation portion are formed in three directions on the side X2, side X3, and side X4 of the die pad portion 11 when viewed in plan, but the present invention is not limited thereto. The rising portion and the upper heat dissipation portion may be formed in only one of the three directions on the side X2, side X3, and side X4 of the die pad portion 11 (see Figure 7 if formed only on the side X2; semiconductor device 5 according to modified example 3), or the rising portion and the upper heat dissipation portion may be formed in only two of the three directions (see Figure 8 if formed only on the side X3 and side X4; semiconductor device 6 according to modified example 4).
[0052] (4) In each of the above embodiments 1, the semiconductor module has two semiconductor devices and uses a common heat sink, but the present invention is not limited thereto. Two or more semiconductor devices may be arranged and use a common heat sink. [Explanation of Symbols]
[0053] 1,1a,1b,2,3,4,5,6,900,900a,900b…Semiconductor device, 10,10a,10b,910…First conductive member, 11…Die pad section, 12…Rising section, 13,13a,13b…First upper heat dissipation section, 14…Second upper heat dissipation section, 15…Third upper heat dissipation section, 20,920…Chip, 21…Sub-electrode, 30,30a,30b,930…Second conductive member, 31…Third conductive member, 40,40a,40b,940…Molding resin, 50,50a,50b,950a,950b…Insulating heat transfer member, 60,960…Heat sink, 70…Substrate, 100,901…Semiconductor module, S1…First conductive bonding material, S2…Second conductive bonding material
Claims
1. A first conductive member having a die pad portion, a rising portion that bends upward from the die pad portion, and an upper heat dissipation portion connected to the tip of the rising portion, A chip is placed on the die pad portion via a first conductive bonding material, A second conductive member is disposed on the chip via a second conductive bonding material, A semiconductor device comprising a first conductive member and a molded resin formed on the first conductive member to a height position that fills the surface of the second conductive member opposite to the surface on which the chip is arranged, The side of the die pad portion opposite to the side on which the chip is placed is exposed from the mold resin. At least a portion of the aforementioned upper heat dissipation section is exposed from the molded resin. The semiconductor device is characterized in that the rising portion has a stepped shape.
2. The semiconductor device according to claim 1, characterized in that the height position of the upper surface of the upper heat dissipation portion is the same as or higher than the height position of the molded resin.
3. The semiconductor device according to claim 1 or 2, characterized in that the rising portion and the upper heat dissipation portion are formed in a predetermined portion of the position surrounding the chip when viewed in plan.
4. The second conductive member extends in a predetermined direction when viewed in plan, The semiconductor device according to claim 3, characterized in that the rising portion and the upper heat dissipation portion are located on the side opposite to the side on which the second conductive member extends relative to the chip when viewed in plan.
5. The semiconductor device according to any one of claims 1 to 4, characterized in that the first conductive member is integrally formed.
6. The semiconductor device according to any one of claims 1 to 5, characterized in that the mold resin is in contact with the rising portion.
7. The semiconductor device according to any one of claims 1 to 6, characterized in that a heat sink is arranged above the mold resin and the upper heat dissipation portion via an insulating heat transfer member.
8. A plurality of semiconductor devices according to any one of claims 1 to 7 are arranged side by side, A semiconductor module characterized in that a common heat sink is arranged above the mold resin and the upper heat dissipation portion of each of the semiconductor devices via an insulating heat transfer member.
9. A first conductive member having a die pad portion, a rising portion that bends upward from the die pad portion, and an upper heat dissipation portion connected to the tip of the rising portion, A chip is placed on the die pad portion via a first conductive bonding material, A second conductive member is disposed on the chip via a second conductive bonding material, The first conductive member comprises a molded resin formed on it to a height position that fills the surface of the second conductive member opposite to the surface on which the chip is placed, The side of the die pad portion opposite to the side on which the chip is placed is exposed from the mold resin. At least a portion of the upper heat dissipation section is provided with multiple semiconductor devices exposed from the molded resin arranged in a row. A semiconductor module characterized in that a common heat sink is arranged above the mold resin and the upper heat dissipation portion of each of the semiconductor devices via an insulating heat transfer member.