Cleaning attachment

Abstract

To provide a technique which can effectively clean the inside of a supercritical processing chamber having a processing space with a narrow opening and a large depth.SOLUTION: The cleaning attachment according to the present invention is applied to a supercritical processing chamber which supports a substrate by a substrate supporting member and moves the substrate supporting member back and forth with respect to a processing space in the chamber body, thereby storing the substrate in the processing space and discharging the substrate from the processing space. The cleaning attachment includes: an engagement unit removably engaged with the substrate supporting member; a cleaning unit in contact with a wall surface of the chamber body which surrounds the processing space; and a connection unit for connecting the engagement unit and the cleaning unit to each other.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] This invention relates to a cleaning attachment for cleaning the interior of a supercritical processing chamber that houses a substrate in an internal processing space and performs supercritical processing.

Background Art

[0002] In the processing steps of various substrates such as semiconductor substrates and glass substrates for display devices, there are those that process the surface of the substrate with various processing fluids. Processing using liquids such as chemical solutions and rinse liquids as processing fluids has been widely carried out conventionally, but in recent years, processing using supercritical fluids has also been put into practical use. In particular, in the processing of substrates having fine patterns formed on their surfaces, supercritical fluids with lower surface tension than liquids can enter deep into the gaps between the patterns, enabling efficient processing, and also reducing the risk of pattern collapse caused by surface tension during drying.

[0003] For example, Patent Document 1 previously disclosed by the applicant of the present application describes a substrate processing apparatus that performs a drying process on a substrate using a supercritical fluid. In this substrate processing apparatus, the substrate to be processed is housed in a supercritical processing chamber in a state of being placed on a flat tray. The supercritical processing chamber configured by combining a plurality of metal blocks has a slit-shaped opening extending horizontally on the side surface, and a processing space for housing the tray is formed inside communicating with the opening. In order to reduce the amount of processing fluid used, the size of the processing space is suppressed to be slightly larger than the outer shape size of the tray. That is, the processing space seen from the opening is a space that is narrow in the vertical direction, long in the horizontal direction, and deep in the depth direction.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

[0005] As processing is repeated, it is inevitable that contaminants will adhere to the inside of the processing chamber, and therefore it is necessary to clean the inside of the processing chamber periodically. However, as described above, the processing space in the conventional technology is a deep space with slit-shaped openings, making manual cleaning by an operator difficult. Since the processing chamber of the conventional technology described above consists of multiple blocks, it is possible to disassemble it and clean the inside.

[0006] However, the weight of each block, which is designed to withstand high pressure, is considerable, making it unsuitable for frequent cleaning. Therefore, even for processing chambers with narrow openings and deep processing spaces as described above, there is a need for technology that enables frequent and effective cleaning, but such technology has not yet been established.

[0007] This invention has been made in view of the above-mentioned problems, and aims to provide a technology that can effectively clean the inside of a supercritical fluid processing chamber having a narrow opening and a deep processing space. [Means for solving the problem]

[0008] One aspect of this invention is a cleaning attachment for a supercritical processing chamber that supports a substrate with a substrate support member and moves the substrate support member forward and backward within a processing space formed in the chamber body to house and discharge the substrate into the processing space. The cleaning attachment comprises an engaging portion that detachably engages with the substrate support member, a cleaning portion that abuts against the wall surface of the chamber body surrounding the processing space, and a connecting portion that connects the engaging portion and the cleaning portion.

[0009] In the invention configured in this way, it is possible to clean the inside of the supercritical processing chamber by utilizing the forward and backward movement of the substrate support member relative to the chamber body. That is, when the substrate support member moves forward and backward relative to the chamber body with the cleaning attachment attached, the cleaning part moves while contacting the wall surface of the processing space, thereby wiping the wall surface. In this way, the cleaning attachment according to the present invention can effectively clean the inside of the supercritical processing chamber by wiping the wall surface using the forward and backward movement of the substrate support member. [Effects of the Invention]

[0010] As described above, according to the present invention, a cleaning attachment mounted on the substrate holding member wipes the wall surface by utilizing the forward and backward movement of the substrate support member. This makes it possible to effectively clean the inside of a supercritical processing chamber, even if it has a narrow opening and a deep processing space. [Brief explanation of the drawing]

[0011] [Figure 1] This figure shows an example of a substrate processing apparatus to which the cleaning attachment according to the present invention can be applied. [Figure 2] This figure shows the relationship between the support tray, the substrate, and the processing space. [Figure 3] This figure shows the first to third embodiments of the cleaning attachment. [Figure 4] This diagram shows the structure of the attachment part for the cleaning attachment. [Figure 5] This figure shows a fourth embodiment of the cleaning attachment. [Figure 6] This figure shows a fifth embodiment of the cleaning attachment. [Modes for carrying out the invention]

[0012] The following describes several embodiments of the cleaning attachment according to the present invention. First, the substrate processing apparatus that is the target of the cleaning process using these cleaning attachments will be described. The substrate processing apparatus 1 described here has basically the same configuration as the one described in Patent Document 1 mentioned above. Therefore, the general configuration of the apparatus will be briefly described here.

[0013] <Configuration of substrate processing equipment> Figure 1 shows a schematic configuration of an example of a substrate processing apparatus to which the cleaning attachment according to the present invention can be applied. This substrate processing apparatus 1 is a device for processing the surface of various substrates, such as semiconductor substrates, with a supercritical fluid. In order to consistently show directions in the following figures, an XYZ Cartesian coordinate system is set up as shown in Figure 1. Here, the XY plane is the horizontal plane, and the Z direction represents the vertical direction. More specifically, the (-Z) direction represents the vertically downward direction.

[0014] In this embodiment, the "substrate" can be any type of substrate, such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for a Field Emission Display (FED), a substrate for an optical disk, a substrate for a magnetic disk, or a substrate for a magneto-optical disk. The following explanation will primarily use a substrate processing apparatus used for processing semiconductor wafers as an example, with reference to the drawings, but the method can also be applied to processing the various types of substrates exemplified above.

[0015] The substrate processing apparatus 1 comprises a processing unit 10, a supply unit 50, and a control unit 90. The processing unit 10 is the main component that performs the supercritical drying process, and the supply unit 50 supplies the chemical substances and power necessary for the process to the processing unit 10.

[0016] The control unit 90 controls each part of these devices to perform predetermined processing. For this purpose, the control unit 90 is equipped with a CPU 91 that executes various control programs, a memory 92 that temporarily stores processing data, a storage 93 that stores the control programs executed by the CPU 91, and an interface 94 for exchanging information with the user and external devices. The operation of the devices, which will be described later, is achieved when the CPU 91 executes a control program that has been written to the storage 93 in advance, causing each part of the devices to perform predetermined operations.

[0017] The processing unit 10 includes a processing chamber 100. The processing chamber 100 comprises a first member 11, a second member 12, and a third member 13, each formed from a metal block. The first member 11 and the second member 12 are joined vertically by a connecting member (not shown), and the third member 13 is joined to the (+Y) side surface of the first member 11 by a connecting member (not shown), forming a processing chamber 100 with an internal cavity 110. The internal space of this cavity 110 is the processing space SP in which processing is performed on the substrate S. The substrate S to be processed is brought into the processing space SP and processed. A slit-shaped opening 101 extending elongated in the X direction is formed on the (-Y) side surface of the processing chamber 100, and the processing space SP and the external space are in communication through the opening 101.

[0018] A lid member 14 is provided on the (-Y) side of the processing chamber 100 to close the opening 101. A flat support tray 15 is mounted horizontally on the (+Y) side of the lid member 14, and the upper surface of the support tray 15 is a support surface on which a substrate S can be placed. More specifically, the support tray 15 has a structure in which a recess 152 is formed on a substantially flat upper surface 151 that is slightly larger than the planar size of the substrate S. By accommodating the substrate S in this recess 152, the substrate S is held in a predetermined position on the support tray 15. The substrate S is held with the surface to be processed (hereinafter sometimes simply referred to as the "substrate surface") Sa facing upward. At this time, it is preferable that the upper surface 151 of the support tray 15 and the substrate surface Sa are on the same or substantially the same plane.

[0019] The lid member 14 is supported by a support mechanism (not shown) so as to be horizontally movable in the Y direction. Further, the lid member 14 is movable forward and backward with respect to the processing chamber 100 by an advance / retreat mechanism 53 provided in the supply unit 50. Specifically, the advance / retreat mechanism 53 has a linear motion mechanism such as a linear motor, a linear guide, a ball screw mechanism, a solenoid, an air cylinder, etc., and such a linear motion mechanism moves the lid member 14 in the Y direction. The advance / retreat mechanism 53 operates in response to a control command from the control unit 90.

[0020] When the lid member 14 moves in the (-Y) direction and the support tray 15 is pulled out from the processing space SP to the outside through the opening 101, access to the support tray 15 from the outside becomes possible. That is, it becomes possible to place the substrate S on the support tray 15 and to take out the substrate S placed on the support tray 15. On the other hand, when the lid member 14 moves in the (+Y) direction, the support tray 15 is housed in the processing space SP. When the substrate S is placed on the support tray 15, the substrate S is carried into the processing space SP together with the support tray 15.

[0021] In a supercritical drying process mainly aimed at drying the substrate while preventing pattern collapse due to the surface tension of the liquid, the substrate S is carried in a state where its surface Sa is covered with a liquid film to prevent the surface Sa from being exposed and pattern collapse from occurring. As the liquid constituting the liquid film, an organic solvent having a relatively low surface tension such as isopropyl alcohol (IPA), acetone, etc. can be preferably used.

[0022] The lid member 14 moves in the (+Y) direction and closes the opening 101, thereby sealing the processing space SP. A sealing member 16 is provided between the (+Y) side surface of the lid member 14 and the (-Y) side surface of the processing chamber 100, maintaining the airtight state of the processing space SP. As the sealing member 16, an annular one made of an elastic resin material, such as rubber, can be used. In addition, the lid member 14 is fixed to the processing chamber 100 by a locking mechanism (not shown). With the processing space SP thus airtight, processing of the substrate S is performed within the processing space SP.

[0023] In this embodiment, a fluid of a substance usable for supercritical processing, such as carbon dioxide, is supplied to the processing unit 10 in gaseous or liquid form from a fluid supply unit 57 provided in the supply unit 50. Carbon dioxide is a suitable chemical substance for supercritical drying processing because it becomes supercritical at relatively low temperatures and pressures, and also has the property of readily dissolving organic solvents that are frequently used in substrate processing.

[0024] More specifically, the fluid supply unit 57 outputs a supercritical fluid, or a fluid supplied in gaseous or liquid form that subsequently becomes supercritical when given a predetermined temperature and pressure, as a processing fluid for processing the substrate S. For example, gaseous or liquid carbon dioxide is output under pressure. The fluid is pumped through piping 571 and valves 572 and 573 inserted in the piping to input ports 102 and 103 provided on the (+Y) side of the processing chamber 100. That is, the fluid is sent from the fluid supply unit 57 to the processing chamber 100 when valves 572 and 573 are opened in response to a control command from the control unit 90.

[0025] The fluid channel 17 from input ports 102 and 103 to the processing space SP functions as an introduction channel for introducing the processing fluid supplied from the fluid supply unit 57 into the processing space SP. Specifically, a channel 171 is connected to input port 102. At the end of channel 171 opposite to input port 102, a buffer space 172 is provided, which is formed so that the cross-sectional area of ​​the channel expands rapidly.

[0026] A flow path 173 is further provided to connect the buffer space 172 and the processing space SP. The flow path 173 has a wide cross-sectional shape that is narrow in the vertical direction (Z direction) and long in the horizontal direction (X direction), and its cross-sectional shape is substantially constant in the direction of flow of the processing fluid. The end of the flow path 171 opposite to the buffer space 172 is an outlet 174 that opens facing the processing space SP, and the processing fluid is introduced into the processing space SP from this outlet 174.

[0027] Preferably, the height of the flow path 173 is equal to the distance between the ceiling surface 110a of the processing space SP and the substrate surface Sa when the support tray 15 is housed in the processing space SP. The discharge port 174 opens facing the gap between the ceiling surface 110a of the processing space SP and the upper surface 151 of the support tray 15. For example, the ceiling surface of the flow path 173 and the ceiling surface 110a of the processing space SP can be made to be on the same plane. In this way, the discharge port 174 opens in a horizontally elongated slit shape facing the processing space SP.

[0028] A fluid channel for the processing fluid is similarly formed below the support tray 15. Specifically, a channel 175 is connected to the input port 103. At the end of the channel 175 opposite to the input port 103, a buffer space 176 is provided, which is formed so that the cross-sectional area of ​​the channel expands rapidly.

[0029] The buffer space 176 and the processing space SP are connected via a flow path 177. The flow path 177 has a cross-sectional shape that is narrow in the vertical direction (Z direction) and wide in the horizontal direction (X direction), and its cross-sectional shape is substantially constant in the direction of flow of the processing fluid. The end of the flow path 177 opposite to the buffer space 176 is an outlet 178 that opens facing the processing space SP, and the processing fluid is introduced into the processing space SP from this outlet 178.

[0030] Preferably, the height of the flow path 177 is equal to the distance between the bottom surface 110b of the processing space SP and the bottom surface of the support tray 15. The discharge port 178 opens facing the gap between the bottom surface 110b of the processing space SP and the bottom surface of the support tray 15. For example, the bottom surface 110b of the flow path 177 and the bottom surface of the processing space SP can be made to be on the same plane. In other words, the discharge port 178 opens in a horizontally elongated slit shape facing the processing space SP.

[0031] In the Z direction, it is desirable that the positions of the flow path 171 and the flow path 173 are different. When they are at the same height, some of the processed fluid that flows from flow path 171 into buffer space 172 will continue straight into flow path 173. In this case, in the width direction of the flow path perpendicular to the flow direction, i.e., in the X direction, there is a risk that differences will occur in the flow rate and velocity of the processed fluid flowing into flow path 173 between the position corresponding to flow path 171 and other positions. This will cause non-uniformity in the X direction of the flow of processed fluid that flows from flow path 173 into processing space SP, leading to turbulence.

[0032] By arranging the flow paths 171 and 173 differently in the Z direction, the straight-line flow of the processing fluid from flow path 171 to flow path 173 is eliminated, making it possible to introduce the processing fluid into the processing space SP as a uniform laminar flow in the width direction.

[0033] The processing fluid introduced from the introduction channel 17 configured in this way flows along the upper and lower surfaces of the support tray 15 within the processing space SP, and is discharged outside the processing container via the discharge channel 18 configured as follows. On the (-Y) side of the substrate S, the ceiling surface of the processing space SP and the upper surface 151 of the support tray 15 are both horizontal planes, and they face each other in parallel while maintaining a certain gap. This gap functions as the upstream section 181 of the discharge channel 18, which guides the processing fluid that has flowed along the upper surface 151 of the support tray 15 and the surface Sa of the substrate S to the fluid discharge section 55. This upstream section 181 has a wide cross-sectional shape that is narrow in the vertical direction (Z direction) and long in the horizontal direction (X direction).

[0034] The end of the upstream section 181 opposite to the processing space SP is connected to the buffer space 182. The buffer space 182 is a space enclosed by the processing chamber 100, the lid member 14, and the sealing member 16. The width of the buffer space 182 in the X direction is equal to or greater than the width of the upstream section 181, and the height of the buffer space 182 in the Z direction is greater than the height of the upstream section 181. Therefore, the buffer space 182 has a larger flow path cross-sectional area than the upstream section 181.

[0035] The downstream portion 183 of the upper discharge channel is connected to the upper part of the buffer space 182. The downstream portion 183 is a through-hole provided through the first member 11, which is the upper block constituting the processing chamber 100. Its upper end constitutes an output port 104 that opens to the upper surface of the processing chamber 100, and its lower end opens facing the buffer space 182.

[0036] Similarly, the bottom surface of the processing space SP and the underside of the support tray 15 are both horizontal planes, and they face each other parallel to maintain a certain gap. This gap functions as the upstream section 185 of the discharge channel 18, which guides the processing fluid flowing along the underside of the support tray 15 to the fluid discharge section 55. Furthermore, the upstream section 185 on the underside of the support tray 15 is connected to the downstream section 187 via a buffer space 186, similar to the upper side of the support tray 15.

[0037] In the processing space SP, the processing fluid that flows over the support tray 15 is sent to the output port 104 via the upstream section 181, buffer space 182, and downstream section 183 of the discharge channel 18, which constitute the upper discharge channel. The output port 104 is connected to the fluid discharge section 55 by piping 551, and a valve 552 is interposed in the middle of the piping 551.

[0038] Similarly, the processing fluid that flows below the support tray 15 in the processing space SP is sent to the output port 105 via the upstream section 185, buffer space 186, and downstream section 187 that constitute the lower discharge channel of the discharge channel 18. The output port 105 is connected to the fluid discharge section 55 by piping 553, and a valve 554 is interposed in the middle of the piping 553.

[0039] Valves 552 and 554 are controlled by the control unit 90. When valves 552 and 554 open in response to a control command from the control unit 90, the processing fluid in the processing space SP is recovered to the fluid discharge section 55 via the piping 551 and 553.

[0040] Figure 2 shows the relationship between the support tray, the substrate, and the processing space. More specifically, Figure 2(a) shows the support tray 15 on which the substrate S is placed pulled out from the processing space SP, and Figure 2(b) shows the support tray 15 housed in the processing space SP.

[0041] As shown in Figure 2(a), the upper surface 151 of the flat support tray 15 has a recess 152 that is slightly larger than the planar size of the substrate S, and the substrate S is housed in this recess 152. The (-Y) side end face of the processing chamber 100 is provided with an opening 101 that communicates with the processing space SP. Its height (size in the Z direction) Ho and width Wo (size in the X direction) are slightly larger than the height and width of the support tray 15. In addition, the cross-sectional shape of the processing space SP in the XZ plane is the same as the shape of the opening 100 regardless of the position in the Y direction, and its depth (size in the Y direction) Ds is slightly larger than the size of the support tray 15 in the Y direction.

[0042] Therefore, as shown in Figure 2(b), when the support tray 15 is housed in the processing space SP, only a small gap remains between the support tray 15 and the wall surface of the processing space SP. Consequently, the volume of the processing space SP in this state is extremely small. This makes it possible to fill the processing space SP with a small amount of processing fluid in supercritical fluid processing, which not only increases processing efficiency but also contributes to resource conservation.

[0043] An example of the dimensions of the processing space SP is as follows: For example, if the substrate S is a semiconductor wafer with a diameter of up to 300 millimeters, the aperture height Ho can be 20 to 30 millimeters, the aperture width Wo can be slightly larger than 300 millimeters, and the depth Ds of the processing space SP can be about 400 millimeters.

[0044] The processing space SP requires periodic cleaning because dirt accumulates inside due to repeated processing. To clean such a processing space SP, which has a wide opening, a low height, and a deep depth, the cleaning attachment to which the present invention is applied can be used. Several embodiments of the cleaning attachment will be described below with reference to the drawings.

[0045] It should be noted that the structure of the processing chamber to which the cleaning attachment of the present invention is applied is not limited to those described above. That is, the cleaning attachment according to the present invention can be applied to processing chambers of various structures that have a processing space inside in which the cross-sectional shape is constant from the opening to the back, by appropriately changing the shape according to the cross-sectional shape.

[0046] <Embodiment 1 to 3> Figure 3 shows the first to third embodiments of the cleaning attachment according to the present invention. More specifically, Figure 3(a) shows the structure of the cleaning attachment 21 according to the first embodiment of the present invention, and Figure 3(b) is a diagram illustrating its operation. Figures 3(c) and 3(d) show the structures of the cleaning attachment 22 according to the second embodiment and the cleaning attachment 23 according to the third embodiment, respectively.

[0047] As shown in Figure 3(a), the cleaning attachment 21 of the first embodiment has a structure in which a cleaning member 212 is provided at the tip of a rod portion 211 that extends in the (+Y) direction from the (+Y) side end face of the support tray 15. The cleaning member 212 is a rod-shaped member with the X direction as its longitudinal direction. Here, its cross-sectional shape is generally H-shaped, but the cross-sectional shape is not limited to this and can be arbitrary.

[0048] The length of the cleaning member 212 in the X direction is slightly less than the opening width Wo of the processing space SP. Also, the height of the cleaning member 212, i.e., its length in the Z direction, is slightly less than the opening height Ho of the processing space SP. The upper and lower ends of the cleaning member 212 are finished as flat surfaces, and wiping materials 213 and 214 are attached to their upper and lower surfaces, respectively. The wiping materials 213 and 214 can be formed, for example, from a sheet-like, porous elastic resin material or cloth. When the wiping materials 213 and 214 are attached to the upper and lower surfaces of the cleaning member 212, their combined height is greater than the opening height Ho of the processing space SP. In other words, the thickness of the wiping materials 213 and 214 is set so that this relationship is maintained.

[0049] As the support tray 15 moves in the (+Y) direction and advances toward the processing space SP, the cleaning attachment 21 attached to the tip of the support tray 15 is inserted into the processing space SP. At this point, the wiping material 213 attached to the upper surface of the cleaning member 212 comes into contact with the ceiling surface of the processing space SP, and the wiping material 214 attached to the lower surface of the cleaning member 212 comes into contact with the bottom surface of the processing space SP. As shown in Figure 3(b), as the support tray 15 moves back and forth with the wiping materials 213 and 214 in contact with the ceiling and bottom surfaces of the processing space SP, the wiping materials 213 and 214 rub against and wipe the ceiling and bottom surfaces of the processing space SP, thereby cleaning the inside of the processing space SP. To enhance the cleaning effect, the wiping materials 213 and 214 may be pre-impregnated with an appropriate cleaning solution.

[0050] Furthermore, it is more preferable that an airflow is formed in the (-Y) direction relative to the processing space SP, that is, from the back of the processing space SP toward the opening 101. This prevents contaminants that have been detached from the walls of the processing space SP by the friction of the wiping materials 213 and 214 from accumulating inside the processing space SP. For example, such an airflow can be generated by supplying an appropriate gas (nitrogen gas, dry air, carbon dioxide gas, etc.) to the processing space SP via the flow paths 173 and 177 (Figure 1).

[0051] On the other hand, the cleaning attachment 22 of the second embodiment shown in Figure 3(c) has a structure in which wiping members 223 and 224 are attached to both ends in the X direction of a cleaning member 222 provided at the tip of a rod portion 221 extending in the (+Y) direction from the (+Y) side end face of the support tray 15. The length of the cleaning member 222 in the X direction is slightly less than the opening width Wo, but the length including the wiping members 223 and 224 is greater than the opening width Wo. Therefore, as the support tray 15 moves in the (+Y) direction and the (-Y) direction, the wiping members 223 and 224 that have advanced into the processing space SP can rub against the side wall surface of the processing space SP and clean it.

[0052] Furthermore, in the cleaning attachment 23 of the third embodiment shown in Figure 3(d), a cleaning member 232 extending in the X direction is attached to the tip of a rod portion 231 extending in the (+Y) direction from the (+Y) side end face of the support tray 15. The length of the cleaning member 232 in the X direction is slightly less than the opening width Wo, and its height is slightly less than the opening height Ho. A wiping member 233 is attached so as to surround the outer circumferential surface of the cleaning member 232, i.e., the top, side, and bottom surfaces. The combined width of the cleaning member 232 and the wiping member 233 is greater than the opening width Wo, and its height is greater than the opening height Ho.

[0053] As the cleaning attachment 23, having this configuration, moves in the Y direction due to the forward and backward movement of the support tray 15 relative to the processing chamber 100, the ceiling, bottom, and side walls constituting the processing space SP are simultaneously wiped. In this structure, since the cleaning attachment 23 acts to close the processing space SP, a through hole 234 may be provided so as to penetrate the cleaning member 232 in the Y direction for gas venting.

[0054] As described above, in the cleaning attachments 21 to 23 of the first to third embodiments, the attachment moves in the Y direction as the support tray 15 moves forward and backward, thereby wiping at least one of the ceiling, bottom, and side wall surfaces constituting the processing space SP, and thereby cleaning the processing chamber 100. It should be noted that the cleaning member 212, etc., may directly contact the wall surface of the processing space SP, and a wiping member may not be provided. This is also true in the other embodiments described later.

[0055] <Structure of the attachment mounting section> Figure 4 shows the structure of the mounting portion of the cleaning attachment to the support tray. Here, the cleaning attachment 21 of the first embodiment is described as an example, but a common structure for the mounting portion can be adopted in each embodiment.

[0056] As shown in Figures 4(a) and 4(b), two screw holes 15a and 15b are provided on the (+Y) side end face of the support tray 15. Connecting members 201 and 202, each having a male threaded portion 201a and 212a, are screwed into these screw holes 15a and 15b, respectively.

[0057] The ends 201b, 201b of the connecting members 201, 202, opposite to the male threaded portions 201a, 212a, are provided with through holes 201c, 202c. Threaded members 203, 204 are inserted through these through holes 201c, 202c. Threaded members 203, 204 are then screwed into threaded holes 211a, 211b, respectively, provided in the rod portion 211 of the cleaning attachment 21. In this way, the cleaning attachment 21 is connected to the support tray 15.

[0058] If a cleaning attachment cannot be installed on the support tray 15, the screw holes 15a and 15b are closed with appropriate plugging members. For example, as shown in Figure 4(c), set screws (also called grub screws) 156 and 157 can be used as plugging members. By closing the screw holes 15a and 15b with plugging members in this way, it is possible to prevent the flow of the processing fluid from being disturbed by the screw holes 15a and 15b during supercritical fluid processing.

[0059] Except when the wiping member 213 etc. is made of cloth, each component constituting the cleaning attachments 21-23 and their mounting parts is made of resin material. For example, chemically stable, moderately elastic, and clean resin materials such as fluororesins like PTFE (polytetrafluoroethylene) resin and PFA (perfluoroalkoxyalkane) resin can be suitably applied.

[0060] If these components are made of, for example, metal, fine particles generated by metal-to-metal friction during attachment to or removal from the support tray 15 may remain in the processing space SP and become a source of contamination. This problem can be avoided by using components made of resin. It is not necessary for all components to be made of resin; metal and resin components may be combined as appropriate, as long as metal-to-metal friction does not occur. Alternatively, the surface of a component may be made of resin, with a metal component embedded inside.

[0061] <Fourth Embodiment> Figure 5 shows a fourth embodiment of the cleaning attachment according to the present invention. As shown in Figure 5(a), in the cleaning attachment 24 of the fourth embodiment, a base portion 242 is provided at the tip of a rod portion 241 that extends in the (+Y) direction from the (+Y) side end face of the support tray 15. Two arm portions 243 and 244 extend diagonally from the (+Y) side end face of the base portion 242. That is, the arm portion 243 provided on the (+X) side extends in a direction having a (+X) direction component and a (+Y) direction component, while the arm portion 244 provided on the (-X) side extends in a direction having a (-X) direction component and a (+Y) direction component. The arm portions 243 and 244 are formed of an elastic resin material. These may be formed integrally with the base portion 242, for example.

[0062] Cleaning members 245 and 246 are provided at the tips of these arm sections 243 and 244, close to each other in the X direction. The height of the cleaning members 245 and 246, i.e., their length in the Z direction, is slightly less than the opening height Ho of the processing space SP. On the other hand, in the X direction, the sum of the lengths of the cleaning members 245 and 246 is significantly smaller than the opening width Wo. The (+Y) side end faces of the cleaning members 245 and 246 are finished as flat surfaces, and wiping members 247 and 248 are attached to them, respectively.

[0063] As the support tray 15 moves in the (+Y) direction, the cleaning attachment 24 enters the processing space SP, and as shown in Figure 5(b), the wiping members 247 and 248 provided at the tips of the cleaning members 245 and 246 come into contact with the (+Y) side wall of the processing space SP. As the support tray 15 moves further in the (+Y) direction from this state, the arm portions 243 and 244 elastically deform outward in the X direction, causing the cleaning members 245 and 246 to also be displaced outward in the X direction.

[0064] In other words, as shown by the dotted arrows in Figure 5(c), when the support tray 15 moves back and forth in the (+Y) and (-Y) directions while the wiping members 247 and 248 are in contact with the (+Y) side wall of the processing space SP, the wiping members 247 and 248 attached to the cleaning members 245 and 246 move back and forth in the X direction, thereby wiping the (+Y) side wall of the processing space SP. In this way, the (+Y) side wall of the processing space SP can be cleaned.

[0065] <Fifth Embodiment> Figure 6 shows a fifth embodiment of the cleaning attachment according to the present invention. As shown in Figure 6(a), in the cleaning attachment 25 of the fifth embodiment, a base portion 252 is provided at the tip of a rod portion 251 that extends in the (+Y) direction from the (+Y) side end face of the support tray 15. The base portion 252 is a rod-shaped member that extends in the X direction, and its length in the X direction is slightly smaller than the opening width Wo of the processing space SP, and in the Z direction it is sufficiently smaller than the opening height Ho.

[0066] A porous nozzle 253 is provided at the upper end of the base portion 252, and a wiping member 254 is attached to its upper surface. Multiple discharge ports 2531 are provided on the upper surface of the porous nozzle 253. On the other hand, a porous nozzle 255 is provided at the lower end of the base portion 252, and a wiping member 256 is attached to its lower surface. Multiple discharge ports 2551 are provided on the upper surface of the porous nozzle 255. The combined height of the base portion 252 and the porous nozzles 253 and 255 is slightly less than the opening height Ho, but the combined height of these with the wiping members 254 and 256 is greater than the opening height Ho. Therefore, when this cleaning attachment 25 enters the processing space SP, the wiping member 254 contacts the ceiling surface of the processing space SP, and the wiping member 256 contacts the bottom surface of the processing space SP.

[0067] Figure 6(b) is an XZ plan cross-sectional view showing the internal structure of the cleaning attachment 25. As shown in the figure, each discharge port 2531 of the porous nozzle 253 and each discharge port 2551 of the porous nozzle 255 are connected to a flow path 2521 provided inside the base portion 252. Each of the flow paths 2521 is connected to a suction mechanism or a spray mechanism (not shown).

[0068] When a suction mechanism is connected to the flow path 2521, the porous nozzles 253 and 255 act to draw in the surrounding atmosphere due to the negative pressure applied. When the cleaning attachment 25 is inside the processing space SP, as shown in Figure 6(c), the wiping members 254 and 256 slide against the ceiling and bottom surfaces of the processing space SP as the support tray 15 moves in the Y direction, and the porous nozzles 253 and 255 suck in the surrounding atmosphere as indicated by the dashed arrows. Therefore, contaminants removed from the ceiling and bottom surfaces of the processing space SP by the wiping members 254 and 256 are sucked in by the porous nozzles 253 and 255 and discharged from the processing space SP. This cleans the processing space SP.

[0069] On the other hand, if an injection mechanism is connected to the flow path 2521, an appropriate fluid is supplied to the porous nozzles 253 and 255 and injected into the processing space SP from the discharge ports 2531 and 2551. In this case, the fluid can be a gas such as nitrogen gas or dry air, or a liquid such as a cleaning solution. As shown by the dashed arrow in Figure 6(d), fluid is supplied to the porous nozzles 253 and 255 via the flow path 2521, and the cleaning attachment 25 moves in the Y direction within the processing space SP while injecting the fluid, thereby cleaning the processing space SP.

[0070] In this case, contaminants adhering to the walls of the processing space SP are washed away and removed by the fluid. To collect the contaminants removed in this way, waste receptacles 257 and 258 may be provided. Of these, waste receptacle 257 is attached to the upper part of the base 252 and receives contaminants that have been separated from the ceiling surface of the processing space SP by the fluid injection from the porous nozzle 253. On the other hand, waste receptacle 258 is positioned below the opening 101 of the processing chamber 100 and receives contaminants that have been separated from the bottom surface of the processing space SP by the fluid injection from the porous nozzle 255 and scraped out by the movement of the cleaning attachment 25 in the (-Y) direction.

[0071] In order to prevent the fluid discharged from the porous nozzles 253 and 255 from flowing into the flow paths 173 and 177 (Figure 1), it is desirable in this embodiment as well to supply an appropriate amount of gas to the flow paths 173 and 177 from an external source.

[0072] <Other> Each of the cleaning attachments 21-25 configured as described above is removed when the substrate processing apparatus 1 performs supercritical drying. At predetermined times, such as during periodic maintenance, one of them is attached to the support tray 15 that does not support the substrate S by the operator. If necessary, the wiping members are pre-impregnated with cleaning solution.

[0073] Then, in response to a control command from the control unit 90, the reciprocating mechanism 53 moves the lid member 14 back and forth in the Y direction. As the support tray 15, which is integrated with the lid member 14, moves in the Y direction, the cleaning attachment moves back and forth within the processing space SP, thereby cleaning the walls of the processing space SP.

[0074] As described above, in each of the embodiments, the support tray 15 corresponds to the "substrate support member" of the present invention. Furthermore, the processing chamber 100 corresponds to the "chamber body" of the present invention, and together with the lid member 14, it constitutes the "supercritical processing chamber" of the present invention.

[0075] Furthermore, in each of the above embodiments, the connecting members 201 and 202 function as the "engaging part" and "connecting member" of the present invention. Also, the rod parts 211, 221, 231, 241, and 251 each function as the "connecting part" of the present invention. In addition, in the first to fourth embodiments, the cleaning members 212, 222, 232, 243, 245, and 246 are combined with the wiping members 213, 214, 223, 224, 233, 247, and 248, respectively, to form an integrated "cleaning part" of the present invention.

[0076] Furthermore, in the fifth embodiment, the base portion 252 and the wiping members 255 and 256 together constitute a "cleaning section". In addition, the porous nozzles 253 and 255 function as the "suction nozzle" of the present invention when connected to a suction mechanism, and as the "discharge nozzle" of the present invention when connected to a spray mechanism.

[0077] It should be noted that the present invention is not limited to the embodiments described above, and various modifications can be made without departing from the spirit of the invention. For example, the cleaning attachments 21 to 25 of each of the above embodiments have cleaning sections specialized for cleaning specific parts of the processing space SP, and they can be selectively attached to the support tray 15.

[0078] However, by combining the above embodiments, multiple cleaning units with different uses may be provided on a single cleaning attachment. Also, for the same reason, during maintenance, multiple types of cleaning attachments may be sequentially switched out to perform cleaning.

[0079] Furthermore, in each of the above embodiments, the components constituting the cleaning attachment are made of resin or metal covered with resin. However, for components that do not come into contact with the processing chamber 100 or the support tray 15 during the series of processes of attachment, cleaning, and removal, the metal portion may be exposed.

[0080] Furthermore, the processing chamber 100 of the substrate processing apparatus 1 described above has a slit-shaped opening on its side with the horizontal direction as its longitudinal direction. However, the structure and opening shape of the chamber to be cleaned by the cleaning attachment of the present invention are not limited to this, and various types can be applied.

[0081] Furthermore, the various chemical substances used in the processing of the above embodiments are merely examples, and various other substances can be used as substitutes, as long as they are consistent with the technical concept of the present invention as described above.

[0082] As described above with examples of specific embodiments, in the cleaning attachment according to the present invention, for example, the cleaning section may have a wiping member made of a porous elastic material or fabric that contacts the wall surface. This makes it possible to enhance the cleaning effect. In this case, the wiping member may be provided corresponding to the ceiling surface and the bottom surface of the wall, or it may be provided corresponding to the side wall surface, or it may be provided corresponding to both.

[0083] For example, the cleaning unit may have an arm portion extending diagonally with respect to the direction of movement of the substrate support member, and a wiping member made of a porous elastic material or fabric, provided at the tip of the arm portion in the direction of movement. With such a configuration, the arm portion elastically deforms in accordance with the movement of the substrate support member, thereby promoting a rubbing action against the wall surface and improving the cleaning effect.

[0084] Furthermore, for example, the engaging portion may have a connecting member that connects the connecting portion and the substrate support member. In this case, it is preferable that at least one of the connecting portion and the connecting member is made of a resin material, or that the surface of a metal member is covered with a resin material. With such a configuration, it is possible to prevent the generation of fine powder due to metal-to-metal friction when attaching or removing the cleaning attachment to the substrate support member, thereby preventing contamination of the processing space.

[0085] For example, the cleaning unit may also include at least one of a suction nozzle for sucking gas from the processing space and a discharge nozzle for discharging fluid into the processing space. With such a configuration, contaminants detached from the wall surface by contact with the cleaning unit can be effectively removed. [Industrial applicability]

[0086] This invention can be applied to all substrate processing technologies that process substrates in a supercritical fluid chamber. In particular, it can be suitably applied to cleaning a supercritical fluid chamber used for substrate drying, such as drying semiconductor substrates with a supercritical fluid. [Explanation of Symbols]

[0087] 1. Substrate processing apparatus 14. Lid component (supercritical fluid processing chamber) 15. Support tray (substrate support member) 21-25 Cleaning attachments 100 Processing Chamber (Chamber body, Supercritical Processing Chamber) 201,202 Connecting members (engaging parts, connecting members) 211, 221, 231, 241, 251 Rod section (connecting section) 212, 222, 232, 243, 245, 246 Cleaning components (cleaning section) 213, 214, 223, 224, 233, 247, 248, 255, 256 Wiping member (Wiping member, cleaning part) 233,234 Arm section 252 Base section (cleaning section) 253,255 Multi-hole nozzles (suction nozzles, discharge nozzles) S substrate SP processing space

Claims

1. A cleaning attachment for a supercritical processing chamber, which supports a substrate with a substrate support member and moves the substrate support member forward and backward within a processing space formed in the chamber body to house and discharge the substrate into the processing space, An engaging portion that detachably engages with the substrate support member, The cleaning section of the chamber body that contacts the wall surface surrounding the processing space A connecting portion that connects the engagement portion and the cleaning portion. A cleaning attachment equipped with [feature].

2. The cleaning attachment according to claim 1, wherein the cleaning section is made of a porous elastic material or fabric and has a wiping member that contacts the wall surface.

3. The cleaning attachment according to claim 2, wherein the wiping member is provided corresponding to the ceiling surface and the bottom surface of the wall.

4. The cleaning attachment according to claim 2, wherein the wiping member is provided corresponding to the side wall surface of the wall surface.

5. The cleaning attachment according to claim 1, wherein the cleaning unit comprises an arm portion extending diagonally with respect to the direction of advancement and retraction of the substrate support member, and a wiping member formed of a porous elastic material or fabric and provided at the tip of the arm portion in the direction of advancement and retraction.

6. The cleaning attachment according to any one of claims 1 to 5, wherein the engaging portion has a connecting member that connects the connecting portion and the substrate support member.

7. The cleaning attachment according to claim 6, wherein at least one of the connecting portion and the connecting member is made of a resin material.

8. The cleaning attachment according to claim 6, wherein at least one of the connecting portion and the connecting member has a structure in which the surface of a metal member is covered with a resin material.

9. The cleaning attachment according to any one of claims 1 to 5, wherein the cleaning unit has a suction nozzle for sucking up gas in the processing space.

10. The cleaning attachment according to any one of claims 1 to 5, wherein the cleaning unit has a discharge nozzle for discharging fluid into the processing space.

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