Manufacturing method for semiconductor devices
By forming grooves and using scribing wheels with controlled angles and play, the method addresses the challenge of forming cracks in the thickness direction, ensuring precise singulation of semiconductor substrates with electrode layers, enhancing device integrity and quality.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- DENSO CORP
- Filing Date
- 2022-12-06
- Publication Date
- 2026-05-11
AI Technical Summary
Existing methods for singulating semiconductor substrates with electrode layers face challenges in forming cracks in the thickness direction due to load dispersion, leading to cracks in unintended directions, which can compromise the integrity of the singulated devices.
A method involving the formation of grooves on the electrode layer followed by pressing a scribing wheel against the groove bottom to create cracks in the thickness direction, using scribing wheels with controlled tip angles and rotational play to ensure precise crack formation, and subsequent division with a dividing member.
This approach allows for accurate crack formation in the thickness direction, enabling efficient and controlled singulation of semiconductor substrates with electrode layers, reducing defects and improving the quality of the resulting devices.
Smart Images
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Abstract
Description
Technical Field
[0001] The technology disclosed in this specification relates to a method for manufacturing a semiconductor device.
Background Art
[0002] Among the steps of a method for manufacturing a semiconductor device, there is a step of singulating a semiconductor substrate on which a plurality of element structures are formed. Patent Document 1 discloses a method called scribe and break. In this method, first, a scribing wheel is pressed against the surface of the semiconductor substrate on which the electrode layer is formed, and a load is applied in the thickness direction of the semiconductor substrate (hereinafter simply referred to as the thickness direction), so that a crack extending in the thickness direction is formed in the semiconductor substrate along the boundary. Next, by pressing a dividing member along the boundary, starting from the above crack, the semiconductor substrate is divided along the boundary and singulated.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] There may be a case where an electrode layer is provided on the surface of a semiconductor substrate. When a scribing wheel is pressed against the electrode layer of such a semiconductor substrate, since the electrode layer is relatively soft, the load is dispersed. Therefore, it may not be possible to appropriately form a crack extending in the thickness direction in the semiconductor substrate, and there is a risk that cracks are formed in a direction other than the thickness direction. In this case, when the semiconductor substrate is singulated later, the cracks remain in the singulated semiconductor devices. This specification provides a technique for appropriately dividing a semiconductor substrate on which an electrode layer is formed by using the scribe and break method.
Means for Solving the Problems
[0005] This specification discloses a method for manufacturing a semiconductor device. The manufacturing method comprises the steps of: forming a groove (G) on the surface of an electrode layer (8) covering a first surface (2a) of a semiconductor substrate (2); forming a crack (5) extending in the thickness direction of the semiconductor substrate in the semiconductor substrate by pressing a scribing wheel (33) against the bottom surface of the groove; and, after the step of forming the crack, dividing the semiconductor substrate by pressing a dividing member (35) along the groove against a second surface (2b) of the semiconductor substrate located on the opposite side of the first surface.
[0006] In this manufacturing method, first, grooves are formed in the electrode layer provided on the first surface of the semiconductor substrate. Then, a scribing wheel is pressed against the bottom surface of the grooves to form cracks in the semiconductor substrate. In this way, since the scribing wheel is pressed along the grooves, the load is not distributed by the electrode layer. As a result, cracks extending in the thickness direction can be appropriately formed in the semiconductor substrate. After that, the semiconductor substrate is divided by pressing a dividing member against the second surface side. In this way, the above manufacturing method can appropriately form cracks extending in the thickness direction in the semiconductor substrate, and thus can appropriately divide a semiconductor substrate on which an electrode layer has been formed. [Brief explanation of the drawing]
[0007] [Figure 1] This is a plan view of a semiconductor substrate. [Figure 2] This is a diagram illustrating the process of attaching the support plate. [Figure 3] This is a diagram illustrating the grinding process before cracks are formed. [Figure 4] This is a diagram illustrating the electrode formation process. [Figure 5] This is a diagram illustrating the groove formation process. [Figure 6] This is a diagram illustrating the crack formation process. [Figure 7]This is a diagram illustrating how cracks are formed in Example 1. [Figure 8] This is a diagram illustrating the process of applying dicing tape. [Figure 9] This is a diagram illustrating the support plate removal process. [Figure 10] This is a diagram illustrating the protective coating process. [Figure 11] This is a diagram illustrating the division process. [Figure 12] This is a diagram illustrating the pickup process. [Figure 13] This is a diagram illustrating how cracks are formed in Example 2. [Modes for carrying out the invention]
[0008] In one example of a manufacturing method disclosed herein, the tip angle (A2) of the scribing wheel may be smaller than the angle (A1) defined by two straight lines connecting each of the two upper ends of the groove to the lower end of the groove in a cross section perpendicular to the groove.
[0009] With this configuration, the scribing wheel is less likely to come into contact with the electrode layer, and cracks that extend more appropriately along the thickness direction can be formed.
[0010] In one example of a manufacturing method disclosed herein, the first scribing wheel is rotatably supported by a first support (133a), and the second scribing wheel is rotatably supported by a second support (132a), wherein the play (C2) of the first scribing wheel relative to the first support in the direction along the axis of rotation of the first scribing wheel is greater than the play (C1) of the second scribing wheel relative to the second support in the direction along the axis of rotation of the second scribing wheel.
[0011] With this configuration, the first scribing wheel can easily move along the groove. Therefore, deviations of the first scribing wheel's movement path from the groove can be suppressed.
[0012] (Example 1) The manufacturing method of Example 1 will be described with reference to the drawings. FIG. 1 is a plan view of a semiconductor substrate 2 in which a plurality of element regions 3 are formed in a matrix. In FIG. 1, each element region 3 is schematically shown by a solid line. For convenience of explanation, a line that is the boundary between adjacent element regions 3 and becomes the edge of each individual element region (semiconductor device) obtained by division when the semiconductor substrate 2 is later divided into individual element regions 3 is referred to as a planned division line 4. The planned division line 4 is a virtual line, not a line actually marked on the semiconductor substrate 2. The planned division line 4 may be a line or groove actually drawn on the semiconductor substrate 2 so as to be visible. In each element region 3, a semiconductor element having functions such as a transistor or a diode is formed.
[0013] The semiconductor substrate 2 is made of silicon carbide (SiC). Note that the semiconductor substrate 2 may be made of other semiconductor materials such as silicon (Si) or gallium nitride (GaN). As shown in FIG. 2 and the like, the semiconductor substrate 2 has a first surface 2a and a second surface 2b located on the back side of the first surface 2a. A main electrode 6 (source electrode, anode electrode, etc.) is formed on the second surface 2b of the semiconductor substrate 2.
[0014] The manufacturing method of the example includes a support plate attaching step, a metal film forming step, a groove forming step, a crack forming step, a dicing tape attaching step, a support plate peeling step, a protective member coating step, and a dividing step.
[0015] (Support plate attaching step) In the support plate attachment step, as shown in FIG. 2, a support plate 12 is attached to the second surface 2b of the semiconductor substrate 2. The support plate 12 is attached to the second surface 2b via an adhesive 11. The support plate 12 is made of, for example, glass. The adhesive 11 is, for example, a silicon-based adhesive and has a function of protecting the second surface 2b of the semiconductor substrate 2 in addition to the function of adhering the semiconductor substrate 2 to the support plate 12. Therefore, here, the adhesive 11 is applied so that the thickness of the adhesive 11 is greater than the thickness of the main electrode 6. Then, as shown in FIG. 3, if necessary, the first surface 2a of the semiconductor substrate 2 is ground by a grinding stone 31. As a result, the semiconductor substrate 2 is thinned.
[0016] (Metal film formation step) Next, the metal film formation step shown in FIG. 4 is performed. In the metal film formation step, a metal film 8 is formed on the first surface 2a of the semiconductor substrate 2. The material constituting the metal film 8 is not particularly limited. For example, it is a multilayer film in which titanium, nickel, and gold are laminated. The metal film 8 is formed so as to cover substantially the entire first surface 2a. That is, the metal film 8 is formed on the first surface 2a so as to straddle a plurality of element regions 3. The metal film 8 functions as an electrode of the completed semiconductor device.
[0017] (Groove formation step) Next, the groove-forming process shown in Figure 5 is carried out. In the groove-forming process, the scribing wheel 32 is pressed against the metal film 8 to form grooves G in the metal film 8. The scribing wheel 32 is a disc-shaped member and is supported by a pair of support members 132a so as to be rotatable around its central axis. Specifically, the scribing wheel 32 has a central hole (not shown), through which a shaft 132b is inserted. Support members 132a are fixed to the shaft 132b on both sides of the scribing wheel 32. Therefore, the scribing wheel 32 rotates relative to the shaft 132b. There is also a clearance of distance C1 between the scribing wheel 32 and each support member 132a. In Figure 5, the distance between the scribing wheel 32 and the left support member 132a is B1, and the distance between the scribing wheel 32 and the right support member 132a is B2, and the sum of these (B1 + B2) is the clearance C1. The scribing wheel 32 can move along the shaft 132b relative to the support 132a within a clearance C1. That is, clearance C1 is the play of the scribing wheel 32 relative to the support 132a. The outer circumferential surface of the scribing wheel 32 protrudes angularly outward in the radial direction. Hereinafter, the angle of the outer circumferential surface in a cross-section along the radial direction of the scribing wheel will be referred to as the tip angle. The scribing wheel 32 has a tip angle A1. Here, the scribing wheel 32 is moved (scanned) along the planned division line 4 while pressing its outer circumferential surface against the metal film 8. As the scribing wheel 32 moves along the planned division line 4, it rolls (moves) on the metal film 8 like a tire rolling on a road surface. The scribing wheel 32 does not slide against the metal film 8, but rotates (in a gripping state) as it moves. In this way, a V-shaped groove G along the shape of the tip of the scribing wheel 32 is formed in the metal film 8. The angle of the V-shaped groove G (i.e., the angle formed by both sides of the groove G) is equal to the tip angle A1 of the scribing wheel 32. No cracks are formed in the semiconductor substrate 2 during the groove formation process. The scribing wheel 32 is an example of a "second scribing wheel". The support 132a is an example of a "second support".
[0018] (Crack formation process) Next, the crack formation process shown in Figure 6 is carried out. In the crack formation process, a scribe line with a crack 5 is formed in the semiconductor substrate 2 by pressing the scribing wheel 33 against the bottom surface of the groove G. The scribing wheel 33 is a disc-shaped member and is supported by a pair of support members 133a so as to be rotatable around its central axis. Specifically, the scribing wheel 33 has a central hole (not shown), through which a shaft 133b is inserted. Support members 133a are fixed to the shaft 133b on both sides of the scribing wheel 33. Therefore, the scribing wheel 33 rotates relative to the shaft 133b. There is also a clearance of distance C2 between the scribing wheel 33 and each support member 133a. In Figure 6, the distance between the scribing wheel 33 and the left support 133a is B3, and the distance between the scribing wheel 33 and the right support 133a is B4. The sum of these (B3 + B4) is the clearance C2. The scribing wheel 33 can move along the shaft 133b relative to the support 133a within the range of clearance C2. In other words, clearance C2 is the play of the scribing wheel 33 relative to the support 133a. The outer circumferential surface of the scribing wheel 32 protrudes angularly outward in the radial direction. The scribing wheel 33 has a tip angle A2. The tip angle A2 of the scribing wheel 33 is smaller than the tip angle A1 of the scribing wheel 32.
[0019] Here, the outer surface of the scribing wheel 33 is pressed against the bottom surface of the groove G and moved (scanned) along the planned division line 4. As the scribing wheel 32 moves along the planned division line 4, it rolls (moves) on the bottom surface of the groove G (i.e., the first surface 2a of the semiconductor substrate 2) like a tire rolling on a road surface. The scribing wheel 32 does not slide against the bottom surface of the groove G, but rotates (in a gripping state) as it moves. Because the distance C2 (i.e., the play of the scribing wheel 33) is large, the scribing wheel 33 can move along the axial direction. Therefore, when the scribing wheel 33 is pressed against the bottom surface of the groove G and moved, the scribing wheel 33 moves axially as it is guided by the groove G. For this reason, the scribing wheel 33 can be moved accurately along the lower end of the groove G. In other words, it is possible to prevent the movement path of the scribing wheel 33 from deviating from the groove G. Furthermore, at this time, the tip angle A2 of the scribing wheel 33 is smaller than the tip angle A1 of the scribing wheel 32 (i.e., the groove angle), so the tip of the scribing wheel 33 can be properly brought into contact with the bottom surface of the groove G. In other words, as shown in Figure 7, the tip of the scribing wheel 33 can be pressed against the semiconductor substrate 2 without the inclined surface of the scribing wheel 33 coming into almost contact with the metal film 8.
[0020] As shown in Figure 7, when the bottom surface of the groove G (i.e., the first surface 2a) is pressed by the scribing wheel 33, compressive stress is generated in the surface region R near the first surface 2a inside the semiconductor substrate 2. The compressive stress is generated isotropically, starting from the point of pressure by the scribing wheel 33 (the point of contact between the periphery of the scribing wheel 33 and the first surface 2a), as shown by arrow 20 in Figure 7. While a scribe line is formed at the point of pressure by the scribing wheel 33, tensile stress is generated inside the semiconductor substrate 2 directly below the region R where compressive stress is generated. The tensile stress is generated directly below the region R where compressive stress is generated, along the first surface 2a of the semiconductor substrate 2, and away from the planned division line 4, as shown by arrow 22. This tensile stress causes a crack 5 to be formed inside the semiconductor substrate 2, extending in the thickness direction of the semiconductor substrate 2. Here, the crack 5 is formed along the boundary of adjacent element regions 3 and extending in the thickness direction of the semiconductor substrate 2. Crack 5 is formed near the surface of the first surface 2a of the semiconductor substrate 2. Generally, compressive stress suppresses crack formation and extension, so crack 5 is formed extending from outside the region R where compressive stress occurs at the point of pressure by the scribing wheel 33 on the first surface 2a of the semiconductor substrate 2 to the region where tensile stress occurs directly below the region R where compressive stress occurs.
[0021] Here, we consider a comparative example in which cracks 5 are formed in the metal film 8 without forming grooves G. In the comparative example, since the metal film 8 is relatively soft, the load is dispersed when the scribing wheel 33 is pressed against the metal film 8. Therefore, it may not be possible to properly form cracks 5 extending in the thickness direction of the semiconductor substrate 2, and cracks may be formed in directions other than the thickness direction. On the other hand, in this embodiment, the tip of the scribing wheel 33 can be pressed against the surface 2a of the semiconductor substrate 2 without the inclined surface of the scribing wheel 33 hardly contacting the metal film 8. As a result, cracks 5 extending in the thickness direction of the semiconductor substrate 2 can be properly formed.
[0022] (Dicing tape application process) Next, the dicing tape application process shown in Figure 8 is carried out. In the dicing tape application process, the dicing tape 13 is applied to the surface of the metal film 8. The dicing tape 13 is applied so as to cover almost the entire surface of the metal film 8. The dicing tape 13 is fixed to a dicing frame (not shown). Note that in Figure 8 and subsequent figures, the semiconductor substrate 2 is depicted with the second surface 2b facing upwards.
[0023] (Support plate removal process) Next, the support plate peeling process shown in Figure 9 is performed. In the support plate peeling process, the support plate 12 and adhesive 11 are peeled off from the second surface 2b of the semiconductor substrate 2. Here, for example, the support plate 12 is peeled off from the second surface 2b together with the adhesive 11 by dissolving the adhesive 11 with a solvent. As a result, the semiconductor substrate 2 is supported by the dicing tape 13.
[0024] (Protective coating process) Next, the protective member coating process shown in Figure 10 is carried out. In the protective member coating process, the protective member 15 is attached so as to span the surface of each main electrode 6 in each element region 3 of the semiconductor substrate 2, thereby covering the second surface 2b of the semiconductor substrate 2 with the protective member 15. The material of the protective member 15 is not particularly limited, but for example, resin can be used. By coating with the protective member 15, the second surface 2b of the semiconductor substrate 2 is protected in subsequent processes such as the splitting process.
[0025] (splitting process) Next, the splitting process shown in Figure 11 is carried out. In the splitting process, the break plate 34 is pressed along the planned splitting line 4 (the crack 5 formed in the crack formation process), and the semiconductor substrate 2 is split along the planned splitting line 4 (along the boundary of the element region 3). Here, first, the semiconductor substrate 2 is placed on two support bases 35. The two support bases 35 are spaced apart. When the semiconductor substrate 2 is placed on the support bases 35, the semiconductor substrate 2 is placed so that the spacing is located below the position to be split (the position where the break plate 34 is pressed). After that, the break plate 34 is pressed against the second surface 2b of the semiconductor substrate 2 via the protective member 15. The break plate 34 is a plate-shaped member, and its lower end (the edge pressed against the second surface 2b) is ridge-shaped (sharp blade-shaped), but it is pressed against the semiconductor substrate 2 without cutting it.
[0026] Since there is no support base 35 below the break plate 34 (there is a gap between the two support bases 35), when the break plate 34 is pressed against the second surface 2b, the semiconductor substrate 2 bends so that it fits into the gap between the two support bases 35. Here, the crack 5 is formed on the first surface 2a side of the semiconductor substrate 2. Therefore, when the break plate 34 is pressed against the semiconductor substrate 2 from the second surface 2b side, the semiconductor substrate 2 bends around the pressed portion (line) as an axis, and on the first surface 2a side, a force is applied in a direction that pulls the two element regions 3 adjacent to the division position away from the crack 5. Also, as described above, tensile stress is applied around the crack 5. Therefore, when the break plate 34 is pressed against the second surface 2b, the crack 5 extends in the thickness direction of the semiconductor substrate 2, and the semiconductor substrate 2 is divided along the planned division line 4. Furthermore, since the metal film 8 is formed on the first surface 2a of the semiconductor substrate 2, a force is applied to the metal film 8 in a direction that pulls the two element regions 3 adjacent to the division position apart, causing the metal film 8 to deform and be divided. Alternatively, instead of the two support bases 35, the entire first surface 2a of the semiconductor substrate 2 may be supported by a single elastic support plate (or one or more support bases via a single elastic support plate). In this case, although the elastic support plate is located below the break plate 34, when the semiconductor substrate 2 flexes, the elastic support plate deforms in accordance with the flexing of the semiconductor substrate 2. Therefore, when the break plate 34 is pressed against the second surface 2b, a force is applied to the crack 5 in a direction that pulls the two element regions 3 adjacent to the division position apart, similar to the case where it is supported by two support bases 35 (when there are no support bases 35 located below the break plate 34). The break plate 34 is an example of a "dividing member".
[0027] In the splitting process, the process of pressing the break plate 34 described above against the second surface 2b is repeatedly performed along each planned splitting line 4. This allows the semiconductor substrate 2 and the metal film 8 to be split along the boundary of each element region 3. Subsequently, as shown in Figure 12, the individualized element regions 3 and metal film 8 are peeled off from the dicing tape 13. When peeling the individualized element regions 3 and metal film 8 from the dicing tape 13, the dicing tape 13 is expanded to separate the individualized element regions 3 and metal film 8 from each other before peeling. This completes the manufacturing of multiple semiconductor devices.
[0028] As described above, in this embodiment, first, a crack 5 is formed on the first surface 2a side of the semiconductor substrate 2 by pressing the scribing wheel 33 against the bottom surface of the groove G (i.e., the first surface 2a of the semiconductor substrate 2). Since the crack 5 is formed on the first surface 2a side of the semiconductor substrate 2, when the break plate 34 is pressed from the second surface 2b side, the semiconductor substrate 2 bends along the crack 5. As a result, a force is applied in the direction of folding the semiconductor substrate 2 outward along the crack 5 from the first surface 2a side. Consequently, the crack 5 extends in the thickness direction of the semiconductor substrate 2, and the semiconductor substrate 2 can be easily divided along the boundary of the element region 3. Furthermore, since the metal film 8 is formed on the first surface 2a of the semiconductor substrate 2, a force is also applied to the metal film 8 on both sides of the crack 5 in a direction that pulls the metal film 8 apart, causing the metal film 8 to deform and be easily divided. Thus, in this embodiment, the metal film 8 can be separated together with the semiconductor substrate 2 by a simple process of pressing the scribing wheel 33 and the break plate 34 against the semiconductor substrate 2.
[0029] In this embodiment, a crack 5 is formed on the first surface side of the semiconductor substrate 2 with a support plate 12 made of glass attached to the semiconductor substrate 2. Since the support plate 12 is made of a relatively hard material, a crack 5 can be formed on the first surface side of the semiconductor substrate 2 with a relatively low load when the scribing wheel 33 is pressed against the semiconductor substrate 2.
[0030] In this embodiment, the semiconductor substrate 2 and the metal film 8 are separated while the dicing tape 13 is attached. Since the semiconductor substrate 2 (metal film 8) is fixed to the dicing tape 13, when the break plate 34 is pressed against the semiconductor substrate 2, displacement of the semiconductor substrate 2 can be suppressed, and scattering of the resulting semiconductor device can be prevented.
[0031] In this embodiment, the break plate 34 is pressed against the semiconductor substrate 2 while the second surface 2b is covered by the protective member 15. Since the second surface 2b is protected by the protective member 15, it is possible to prevent the break plate 34 from damaging the second surface 2b.
[0032] (Example 2) Next, with reference to Figure 13, Example 2 will be described. Example 2 differs from Example 1 in that a U-shaped groove G is formed in the metal film 8, as shown in Figure 13. In Example 2, the angle A1 of the groove G is defined by two straight lines (dashed line 100 in Figure 13) connecting the two upper ends U1 and U2 of the groove G to the lower end L of the groove G in a cross section perpendicular to the groove G. The tip angle A2 of the scribing wheel 33 is smaller than the angle A1 of the groove G. Even with this configuration, the scribing wheel 33 is less likely to come into contact with the metal film 8, and a crack 5 that extends more appropriately along the thickness direction can be formed.
[0033] In the above-described embodiment, the support plate attachment step, the dicing tape attachment step, and the protective member covering step may be omitted.
[0034] Furthermore, in the groove formation step of the above-described embodiment, grooves G were formed in the metal film 8 by the scribing wheel 32, but grooves G may also be formed in the metal film 8 by other methods, such as etching.
[0035] The configurations of the manufacturing methods disclosed herein are listed below. (Composition 1) A method for manufacturing a semiconductor device, A step of forming grooves (G) on the surface of an electrode layer (8) covering the first surface (2a) of a semiconductor substrate (2), The process involves pressing a scribing wheel (33) against the bottom surface of the groove to form a crack (5) in the semiconductor substrate that extends in the thickness direction of the semiconductor substrate, The steps include, after the step of forming the crack, dividing the semiconductor substrate by pressing the dividing member (35) along the groove against the second surface (2b) of the semiconductor substrate located on the opposite side of the first surface, A manufacturing method that includes the following features. (Configuration 2) The manufacturing method according to configuration 1, wherein the tip angle (A2) of the scribing wheel is smaller than the angle (A1) defined by two straight lines connecting the two upper ends of the groove and the lower end of the groove in a cross section perpendicular to the groove. (Composition 3) The scribing wheel is the first scribing wheel (33), In the step of forming the groove, the groove is formed by pressing the second scribing wheel (32) against the electrode layer. The manufacturing method described in configuration 1 or 2. (Composition 4) The manufacturing method according to configuration 3, wherein the tip angle (A2) of the first scribing wheel is smaller than the tip angle (A1) of the second scribing wheel. (Composition 5) The first scribing wheel is rotatably supported by the first support (133a), The second scribing wheel is rotatably supported by the second support (132a), The play (C2) of the first scribing wheel relative to the first support in the direction along the axis of rotation is greater than the play (C1) of the second scribing wheel relative to the second support in the direction along the axis of rotation. The manufacturing method described in configuration 3 or 4. (Composition 6) The manufacturing method according to any one of configurations 1 to 5, wherein the semiconductor substrate is made of SiC.
[0036] The specific examples of the technology disclosed in this specification have been described in detail above, but these are merely illustrative and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes to the specific examples described above. The technical elements described in this specification or drawings exhibit technical usefulness individually or in various combinations, and are not limited to the combinations described in the claims at the time of filing. Furthermore, the technology illustrated in this specification or drawings can achieve multiple objectives simultaneously, and achieving even one of these objectives itself constitutes technical usefulness. [Explanation of symbols]
[0037] 2: Semiconductor substrate, 2a: First surface, 2b: Second surface, 3: Device region, 4: Planned division line, 5 : Crack, 6: Main electrode, 8: Metal film, 11: Adhesive, 12: Support plate, 13: Daishin G: Groove tape, 15: Protective material, 31: Grinding wheel, 32, 33: Scribing wheel, 34: Break plate, G: Groove
Claims
1. A method for manufacturing a semiconductor device, A step of forming grooves (G) on the surface of an electrode layer (8) covering the first surface (2a) of a semiconductor substrate (2) by pressing a second scribing wheel (32) against the electrode layer, The process involves pressing a first scribing wheel (33) against the bottom surface of the groove to form a crack (5) in the semiconductor substrate that extends in the thickness direction of the semiconductor substrate, After the step of forming the crack, the semiconductor substrate is divided by pressing the dividing member (35) along the groove against the second surface (2b) of the semiconductor substrate located on the opposite side of the first surface, Equipped with, The first scribing wheel is rotatably supported by the first support member (133a), The second scribing wheel is rotatably supported by the second support member (132a), A manufacturing method wherein the play (C2) of the first scribing wheel relative to the first support in the direction along the axis of rotation of the first scribing wheel is greater than the play (C1) of the second scribing wheel relative to the second support in the direction along the axis of rotation of the second scribing wheel.
2. The manufacturing method according to claim 1, wherein the tip angle (A2) of the first scribing wheel is smaller than the angle (A1) defined by two straight lines connecting each of the two upper ends of the groove to the lower end of the groove in a cross section perpendicular to the groove.
3. The manufacturing method according to claim 1, wherein the tip angle (A2) of the first scribing wheel is smaller than the tip angle (A1) of the second scribing wheel.
4. The manufacturing method according to any one of claims 1 to 3, wherein the semiconductor substrate is made of SiC.