Semiconductor equipment

Abstract

To provide a semiconductor device that measures the junction temperature during the operation of a switching element.SOLUTION: A semiconductor device A1 comprises: a switching element 1 having a drain electrode, a gate electrode 132, and a source electrode 133; a base part 20 supporting the switching element 1; and a first terminal 21, a second terminal 22, a third terminal 23, and a fourth terminal 24 extending in the same direction. The switching element 1 is provided with a temperature detection diode 15 having a first electrode 151 positioned on an element main surface 11 of the element 1. Each of the drain electrode, the gate electrode 132, and the source electrode 133 is electrically connected to any one of the first terminal 21, the second terminal 22, and the third terminal 23. The first electrode 151 is electrically connected to the fourth terminal 24 via a first wire 61.SELECTED DRAWING: Figure 2

Description

Technical Field

[0004] , , , , , , , , , , ,

[0005]

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Patent Document 1 discloses an example of a switching device (semiconductor device) including a switching element such as a MOSFET. The switching element has a drain electrode, a gate electrode, and a source electrode. The semiconductor device disclosed in the document includes three terminals (a gate terminal, a source terminal, and a drain terminal). The gate terminal is a terminal for inputting an electrical signal to the gate electrode. Based on the electrical signal, the converted current flows from the source electrode to the outside through the source terminal, and the converted current based on the electrical signal flows toward the drain electrode through the drain terminal.

[0003] In the semiconductor device and the like shown in Patent Document 1 above, since the presence or absence of a failure, the life, and the reliability are closely related to the temperature during operation, it is required to accurately know the junction temperature of the semiconductor element. When the semiconductor element is a MOSFET, the junction temperature can be measured by using the body diode inside the switching element and a thermal resistance measuring device. For example, when using a thermal resistance measuring device, after applying a driving voltage to the switching element, a current is passed through the body diode and the voltage is measured with the thermal resistance measuring device to estimate the junction temperature.

[0004] However, the measurement of the junction temperature using the above-described thermal resistance measuring device is suitable for performing in a laboratory, but it cannot be performed in a situation where the semiconductor device is actually used (when driving the switching element).

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

[0006] In view of the circumstances described above, one objective of this disclosure is to provide a semiconductor device capable of measuring the junction temperature during the operation of a switching element.

[0007] A semiconductor device provided by this disclosure comprises: a switching element having a main surface and a back surface facing opposite directions in a first direction, a drain electrode, a gate electrode, and a source electrode, wherein the connection between the drain electrode and the source electrode is controlled on / off by applying a drive voltage between the gate electrode and the source electrode while a potential difference is applied between the drain electrode and the source electrode; a base having a front surface and a back surface facing opposite directions in a first direction, supporting the switching element such that the back surface faces the front surface; and first terminals, second terminals, third terminals, and fourth terminals, each extending in a second direction perpendicular to the first direction. The switching element includes a temperature sensing diode having a first electrode disposed on the main surface of the element. The drain electrode, the gate electrode, and the source electrode are each electrically connected to one of the first terminal, the second terminal, and the third terminal. The first electrode is electrically connected to the fourth terminal via a first wire. [Effects of the Invention]

[0008] According to the above configuration, for example, the junction temperature during the operation of the switching element can be measured.

[0009] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings. [Brief explanation of the drawing]

[0010] [Figure 1] This is a perspective view showing a semiconductor device according to the first embodiment. [Figure 2]It is a plan view of the semiconductor device A1 shown in FIG. 1. [Figure 3] It is a cross-sectional view taken along line III-III of FIG. 2. [Figure 4] It is a cross-sectional view taken along line IV-IV of FIG. 2. [Figure 5] It is a cross-sectional view taken along line V-V of FIG. 2. [Figure 6] It is a diagram showing the circuit configuration of the semiconductor device according to the first embodiment. [Figure 7] It is a plan view showing a modified example of the semiconductor device according to the first embodiment. [Figure 8] It is a plan view showing a modified example of the semiconductor device according to the first embodiment. [Figure 9] It is a plan view showing the semiconductor device according to the second embodiment. [Figure 10] It is a cross-sectional view taken along line X-X of FIG. 9. [Figure 11] It is a cross-sectional view taken along line XI-XI of FIG. 9. [Figure 12] It is a plan view showing the semiconductor device according to the third embodiment. [Figure 13] It is a cross-sectional view taken along line XIII-XIII of FIG. 12. [Figure 14] It is a plan view showing the semiconductor device according to the fourth embodiment. [Figure 15] It is a cross-sectional view taken along line XV-XV of FIG. 14. [Figure 16] It is a plan view showing the semiconductor device according to the fifth embodiment. [Figure 17] It is a plan view showing a modified example of the semiconductor device shown in FIG. 12. [Figure 18] It is a cross-sectional view taken along line XVIII-XVIII of FIG. 17.

Embodiments for Carrying Out the Invention

[0011] Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

[0012] Figs. 1 to 5 show a semiconductor device according to the first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a switching element 1, a lead frame 2, a gate wire 52, a source wire 53, a first wire 61, a second wire 62, and a sealing resin 7.

[0013] FIG. 1 is a perspective view of the semiconductor device A1. FIG. 2 is a plan view of the semiconductor device A1. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 2. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 2. In FIG. 2, the sealing resin 7 is made transparent and is indicated by an imaginary line. For convenience of understanding, the thickness direction of the semiconductor device A1 is defined as the first direction z, the vertical direction in the plan view (FIG. 2) that is perpendicular to the first direction z is defined as the second direction y, and the left-right direction in the plan view (FIG. 2) that is perpendicular to both the first direction z and the second direction y is defined as the third direction x. Note that the phrase "upper and lower" in the following description is used for convenience of explanation and does not limit the installation posture of the semiconductor device A1 of the present disclosure.

[0014] The switching element 1 is a switching element having Si or SiC as a base material, and is an element that realizes the switching function to be performed by the semiconductor device A1. Examples of the switching element 1 include a SiC-MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), a SiC-bipolar transistor, a SiC-JFET (Junction Field Effect Transistor), a SiC-IGBT (Insulated Gate Bipolar Transistor), etc. In this embodiment, the case where the switching element 1 is a SiC-MOSFET will be described as an example.

[0015] As shown in FIGS. 3 and 4, the element main surface 11 is the upper surface of the switching element 1. The element back surface 12 is the lower surface of the switching element 1. The element main surface 11 and the element back surface 12 face opposite sides in the first direction z.

[0016] As shown in Figures 2 to 5, the switching element 1 has a drain electrode 131, a gate electrode 132, and a source electrode 133. The switching element 1 is equipped with a temperature sensor. In the illustrated example, the temperature sensor is a temperature sensing diode 15, but the disclosure is not limited thereto.

[0017] The drain electrode 131 is located on the back surface 12 of the element. The gate electrode 132 is located on the main surface 11 of the element (the surface opposite to the surface on which the drain electrode 131 is located). The source electrode 133 is located on the main surface 11 of the element (the same surface on which the gate electrode 132 is formed). The source electrode 133 is larger than the gate electrode 132. The switching element 1 controls the on / off state of the drain electrode 131 and the source electrode 133 by applying a drive voltage to the gate electrode 132 and the source electrode 133 while a potential difference is applied to the drain electrode 131 and the source electrode 133.

[0018] The temperature sensing diode 15 has a pn junction diode portion 150 fabricated in the switching element 1 by a semiconductor process, and a first electrode 151 and a second electrode 152. In this embodiment, the pn junction diode portion 150 is formed on the main surface 11 side of the element, and the first electrode 151 and the second electrode 152 are arranged on the main surface 11 of the element. In this embodiment, the first electrode 151 is the anode electrode, and the second electrode 152 is the cathode electrode.

[0019] In this embodiment, the switching element 1 has a rectangular shape when viewed in the thickness direction (viewed in the first direction z). For example, the dimensions of the switching element 1 in the first direction z are 1 mm to 10 mm square. The thickness dimension of the switching element 1 is, for example, 40 μm to 700 μm.

[0020] The switching element 1 is supported by the die pad 20, described later, via a bonding material 3. The bonding material 3 is a conductive bonding material formed using, for example, TiNiAg-based solder, SnAgCu-based solder, Pb solder, or calcined Ag, in order to provide electrical conductivity between the drain electrode 131 of the switching element 1 and the die pad 20.

[0021] The lead frame 2 is a conductive component and, by being joined to a circuit board (not shown), constitutes a conductive path between the switching element 1 and the circuit board. The lead frame 2 is made of an alloy mainly composed of Cu. Plating may be applied to a part of the surface, taking into consideration corrosion resistance, conductivity, thermal conductivity, or bonding properties. The lead frame 2 is made of the same lead frame material and includes a die pad 20, a first terminal 21, a second terminal 22, a third terminal 23, and a fourth terminal 24.

[0022] The die pad 20 has a front surface 20a and a back surface 20b. The front surface 20a is the top surface of the die pad 20. The front surface 20a is the surface on which the switching element 1 is mounted, and as shown in Figures 3 to 5, the back surface 12 of the switching element 1 faces the front surface 20a. The back surface 20b is the bottom surface of the die pad 20. Both the front surface 20a and the back surface 20b are flat and face opposite each other in the first direction z.

[0023] In this embodiment, the die pad 20 has a through hole 20c that extends from the surface 20a to the back surface 20b. The through hole 20c is spaced apart from the switching element 1 when viewed in the thickness direction (first direction z view). In this embodiment, the through hole 20c is circular when viewed in the thickness direction, but its shape is not particularly limited. The die pad 20 described above is an example of a "base".

[0024] The first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 are spaced apart from each other in the third direction x, and are used when mounting the semiconductor device A1 on, for example, a circuit board (not shown).

[0025] As shown in Figure 2, the first terminal 21 is positioned spaced apart from the die pad 20 and extends along the second direction y. The first terminal 21 is located at the outermost position (left side in the figure) in the third direction x when viewed in the first direction z. The first terminal 21 has a first pad 211 and a tip portion 212. The first pad 211 is closest to the die pad 20 in the second direction y. The tip portion 212 is the tip of the first terminal 21 located on the opposite side of the first pad 211 and is furthest from the die pad 20 in the second direction y. A gate wire 52 is bonded to the first pad 211. The first terminal 21 is electrically connected to the gate electrode 132 via the gate wire 52. In this embodiment, the first terminal 21 is the gate terminal of the semiconductor device A1.

[0026] The second terminal 22 is positioned spaced apart from the die pad 20 and extends along the second direction y. The first terminal 21 is positioned at the outermost edge (right side in the figure) in the third direction x when viewed in the first direction z. As a result, the second terminal 22 and the first terminal 21 are located at the outermost edges opposite each other in the third direction x. The second terminal 22 has a second pad 221 and a tip portion 222. The second pad 221 is closest to the die pad 20 in the second direction y. The tip portion 222 is the tip portion of the second terminal 22 located on the opposite side of the second pad 221 and is furthest from the die pad 20 in the second direction y. A source wire 53 is bonded to the second pad 221. The second terminal 22 is electrically connected to the source electrode 133 via the source wire 53. In this embodiment, the second terminal 22 is the source terminal of the semiconductor device A1. A second wire 62 is bonded to the second pad 221. The second terminal 22 is electrically connected to the second electrode 152 via the second wire 62.

[0027] The third terminal 23 is connected to the die pad 20 and extends from the die pad 20 along the second direction y. In this embodiment, as shown in Figure 2, the third terminal 23 is connected to one end (lower end in the figure) of the die pad 20 in the second direction y and to the center of the die pad 20 in the third direction x, when viewed in the first direction z. The third terminal 23 is located between the first terminal 21 and the second terminal 22 in the third direction x. The third terminal 23 has an intermediate bend portion 233 and a tip portion 232. As shown in Figure 5, the intermediate bend portion 233 is the portion of the third terminal 23 that is bent so that the portion exposed from the sealing resin 7 is offset upward in the figure from the die pad 20 in the first direction z. The tip portion 232 is the tip portion of the third terminal 23 and is located furthest from the die pad 20 in the second direction y. The third terminal 23 is electrically connected to the drain electrode 131 via the die pad 20 and the bonding material 3. In this embodiment, the third terminal 23 is the drain terminal of semiconductor device A1.

[0028] The fourth terminal 24 is positioned spaced apart from the die pad 20 and extends along the second direction y. In a view in the first direction z, the fourth terminal 24 is located between the second terminal 22 and the third terminal 23. The fourth terminal 24 has a fourth pad 241, a tip portion 242, and a bent portion 243. The fourth pad 241 is closest to the die pad 20 in the second direction y. The tip portion 242 is the tip of the fourth terminal 24 located on the opposite side of the fourth pad 241 and is furthest from the die pad 20 in the second direction y. The bent portion 243 is located between the fourth pad 241 and the tip portion 242 and is positioned closer to the fourth pad 241 in the second direction y.

[0029] As can be seen from Figures 1 and 2, the tip end of the fourth terminal 24 is biased to one side of the first direction z (the side facing the surface 20a of the die pad 20) than the bent portion 243. Because the fourth terminal 24 has a bent portion 243, the tip end 242 of the fourth terminal 24 is biased to the aforementioned side of the first direction z (the side facing the surface 20a of the die pad 20) than the tip ends 212, 222, and 232 of the first terminal 21, second terminal 22, and third terminal 23, respectively. In Figure 1, unlike this embodiment, the shape of the fourth terminal 24 when it extends straight from the fourth pad 241 to the tip end 242 along the second direction y without having a bent portion 243 is shown by dashed lines.

[0030] The first wire 61 is connected to the fourth pad 241 of the fourth terminal 24. The fourth terminal 24 is electrically connected to the first electrode 151 via the first wire 61.

[0031] As shown in Figure 2, the distance in the third direction x between the center line C1 of the first terminal 21 (gate terminal) and the center line C3 of the third terminal 23 (drain terminal) (first distance d13) is greater than the distance in the third direction x between the center line C3 of the third terminal 23 (drain terminal) and the center line C4 of the fourth terminal 24 (second distance d34). Also, the first distance d13 is greater than the distance in the third direction x between the center line C4 of the fourth terminal 24 and the center line C2 of the second terminal 22 (source terminal) (third distance d24). In this embodiment, the second distance d34 and the third distance d24 are substantially the same. Furthermore, the sum of the second distance d34 and the third distance d24 is substantially the same as the first distance d13.

[0032] As shown in Figure 2, the gate wire 52 is connected to the gate electrode 132 of the switching element 1 and the first pad 211 of the first terminal 21, thereby making the gate electrode 132 of the switching element 1 and the first terminal 21 electrically connected. In Figure 4, the gate wire 52 is omitted.

[0033] The source wire 53 is connected to the source electrode 133 of the switching element 1 and the second pad 221 of the second terminal 22, thereby creating electrical conductivity between the source electrode 133 and the second terminal 22 of the switching element 1. The source wire 53 is omitted in Figures 4 and 5.

[0034] The first wire 61 is connected to the first electrode 151 of the switching element 1 (temperature sensing diode 15) and the fourth pad 241 of the fourth terminal 24, thereby creating electrical conductivity between the first electrode 151 and the fourth terminal 24 of the temperature sensing diode 15. In Figure 5, the first wire 61 is omitted.

[0035] The second wire 62 is connected to the second electrode 152 of the switching element 1 (temperature sensing diode 15) and the second pad 221 of the second terminal 22, thereby creating electrical conductivity between the second electrode 152 and the second terminal 22 of the temperature sensing diode 15.

[0036] The gate wire 52, source wire 53, first wire 61, and second wire 62 are made of, for example, Al (aluminum), Al alloy, Cu, or Cu alloy. The diameter of the source wire 53 may be larger than that of the other wires 52, 61, and 62. Multiple source wires 53 may be provided.

[0037] The sealing resin 7 covers and protects the switching element 1, a portion of the lead frame 2, the gate wire 52, the source wire 53, the first wire 61, and the second wire 62. Specifically, the sealing resin 7 covers the die pad 20, a portion of the first terminal 21 (mainly the first pad 211), a portion of the second terminal 22 (mainly the second pad 221), a portion of the third terminal 23 (mainly the intermediate bend portion 233), and a portion of the fourth terminal 24 (mainly the fourth pad 241) of the lead frame 2. The sealing resin 7 is a thermosetting synthetic resin with electrical insulating properties. The material of the sealing resin 7 is not particularly limited; for example, it may be made of black epoxy resin and may contain fillers as appropriate.

[0038] In this embodiment, the sealing resin 7 has a resin main surface 71, a resin back surface 72, a pair of resin first side surfaces 73, and a pair of resin second side surfaces 74. The resin main surface 71 is the upper surface of the sealing resin 7 shown in Figures 3 to 5, and is the surface facing the same side as the surface 20a of the die pad 20. The resin back surface 72 is the lower surface of the sealing resin 7 shown in Figures 3 to 5, and is the surface facing the same side as the back surface 20b of the die pad 20. The resin main surface 71 and the resin back surface 72 are surfaces facing the first direction z, and are facing opposite directions from each other.

[0039] The pair of first resin sides 73 are surfaces formed spaced apart in the second direction y, as shown in Figure 5. The pair of first resin sides 73 face opposite each other in the second direction y. The upper end of the first resin side 73 shown in Figure 5 is connected to the main resin surface 71, and the lower end of the first resin side 73 shown in Figure 5 is connected to the back surface 72. In this embodiment, a portion of the first terminal 21, second terminal 22, third terminal 23, and fourth terminal 24 is exposed from one of the first resin sides 73.

[0040] The pair of second resin surfaces 74 are formed spaced apart in the third direction x, as shown in Figures 3 and 4. The pair of second resin surfaces 74 face opposite each other in the third direction x. The upper ends of the second resin surfaces 74 shown in Figures 3 and 4 are connected to the main resin surface 71, and the lower ends of the second resin surfaces 74 shown in Figures 3 and 4 are connected to the back surface 72.

[0041] The sealing resin 7 has a pair of recesses 75 formed in it, which are recessed into the interior of the sealing resin 7 from the upper part of each of the pair of second resin sides 74 shown in Figure 1. Also, as shown in Figures 1 and 5, the sealing resin 7 has resin through holes 76 that extend from the main resin surface 71 to the back resin surface 72. In this embodiment, the center of the resin through hole 76 is the same as the center of the through hole 20c in the die pad 20. The diameter of the resin through hole 76 is smaller than the diameter of the through hole 20c. In this embodiment, the entire wall of the through hole 20c is covered by the sealing resin 7. Contrary to the embodiment, a configuration in which the through hole 20c and the resin through hole 76 are not formed is also possible. In this embodiment, as shown in Figures 3 to 5, the back surface 20b of the die pad 20 is covered by the sealing resin 7, but conversely, a configuration in which the back surface 20b is not covered by the sealing resin 7 and is exposed from the back resin surface 72 of the sealing resin 7 is also possible.

[0042] In this embodiment, the width of the third terminal 23 near its base end (the dimension in the third direction x in Figure 2) is larger than the widths of the other terminals, the first terminal 21, the second terminal 22, and the fourth terminal 24. However, the width of the third terminal 23 near its base end may be approximately the same as the widths of the first terminal 21, the second terminal 22, and the fourth terminal 24. In this case, the width dimensions of the portions exposed from the sealing resin 7 of the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 will be the same.

[0043] Figure 6 is a block diagram showing the circuit configuration of the semiconductor device A1 of this embodiment. As explained with reference to Figure 2, the fourth terminal 24 is connected to the first electrode 151 of the temperature sensing diode 15. The second terminal 22, which is the source terminal, is connected to the second electrode 152 of the temperature sensing diode 15.

[0044] Next, the effects and advantages of this embodiment will be described.

[0045] The semiconductor device A1 of this embodiment is equipped with a first terminal 21, a second terminal 22, and a third terminal 23 corresponding to the gate terminal, source terminal, and drain terminal, as well as a fourth terminal 24. The switching element 1 is equipped with a temperature sensing diode 15, and the first electrode 151 of the temperature sensing diode 15 is conductive to the fourth terminal 24 via a first wire 61. On the other hand, the second electrode 152 of the temperature sensing diode 15 is conductive to another terminal (the second terminal 22 in this embodiment) via a second wire 62. With this configuration, the junction temperature of the switching element 1 can be measured by passing current through the temperature sensing diode 15 using the fourth terminal 24 and the second terminal 22 which are conductive to the temperature sensing diode 15, measuring the voltage, and utilizing the temperature dependence of the diode's resistance change. Furthermore, in this embodiment, by providing a dedicated fourth terminal 24 for conductivity with the temperature sensing diode 15, the junction temperature can be measured using the temperature sensing diode 15 while driving the switching element 1.

[0046] In this embodiment, the second electrode 152 of the temperature sensing diode 15 is conductive to the second terminal 22, which is the source terminal. The source terminal (second terminal 22) is connected to ground as a reference potential, and its potential is stable at substantially 0V. By sharing this second terminal 22 as a terminal of the temperature sensing diode 15, the junction temperature can be measured stably even when current is flowing through the temperature sensing diode 15. Such a configuration is suitable for stably measuring the junction temperature when driving the switching element 1 while suppressing an increase in the number of terminals.

[0047] Regarding the first terminal 21, second terminal 22, and third terminal 23, which correspond to the gate terminal, source terminal, and drain terminal, the first terminal 21 (gate terminal) and the second terminal 22 (source terminal) are located on opposite sides of each other in the third direction x. The third terminal 23 (drain terminal) is located between the first terminal 21 and the second terminal 22 in the third direction x. With this configuration, the arrangement of the first terminal 21, second terminal 22, and third terminal 23 (gate terminal, source terminal, and drain terminal) is the same as that of conventional three-terminal switching devices (semiconductor devices), making it easy to mount on circuit boards and the like.

[0048] The first distance d13 in the third direction x between the center line C1 of the first terminal 21 and the center line C3 of the third terminal 23 is greater than the second distance d34 in the third direction x between the center line C3 of the third terminal 23 and the center line C4 of the fourth terminal 24, and the third distance d24 in the third direction x between the center line C4 of the fourth terminal 24 and the center line C2 of the second terminal 22. As a result, the fourth terminal 24 is located in the center of the three terminals 23, 24, and 22, which are arranged with relatively small distances between them. With this configuration, the fourth terminal 24, which is dedicated to conducting with the temperature sensing diode 15, can be easily distinguished from the other first to third terminals 21 to 23.

[0049] At the fourth terminal 24, the tip end is biased toward one side of the first direction z (the side facing the surface 20a of the die pad 20) relative to the bent portion 243. This configuration also makes it easy to distinguish the fourth terminal 24, which is dedicated to conducting with the temperature sensing diode 15, from the other first to third terminals 21 to 23. Furthermore, if the portion of the fourth terminal 24 exposed from the sealing resin 7, from the bent portion 243 to the sealing resin 7, is covered with an insulating resin, for example by potting, it is possible to appropriately secure the creepage distance between the third terminal 23 (drain terminal) and the second terminal 22 (source terminal). In this case, it is possible to increase the withstand voltage between the third terminal 23 (drain terminal) and the second terminal 22 (source terminal).

[0050] The fourth terminal 24 may be configured without a bent portion 243. In this case, as shown by the dashed line in Figure 1, the fourth terminal 24 extends straight along the second direction y, and the position of the fourth terminal 24 in the first direction z (position in the vertical direction) is substantially aligned with the positions of the first terminal 21, second terminal 22, and third terminal 23 in the first direction z. The fact that the fourth terminal 24 may be configured without a bent portion 243 is also true for the variations described later.

[0051] Figure 7 shows a first modified example of the semiconductor device A1 according to the first embodiment described above. The semiconductor device A11 of this modified example differs from the semiconductor device A1 mainly in the configuration of the first terminal 21 and the third terminal 23, and in the bonding state of the gate wire 52, source wire 53, and second wire 62. In Figure 7, the sealing resin 7 is transparent and is shown with dashed lines. In the drawings from Figure 7 onward, elements that are the same as or similar to those in the semiconductor device A1 of the above embodiment are denoted by the same reference numerals as in the above embodiment, and their descriptions are omitted as appropriate.

[0052] In the semiconductor device A11 shown in Figure 7, the first terminal 21 is connected to the die pad 20 and extends from the die pad 20 along the second direction y. As shown in Figure 7, the third terminal 23 is connected to the left end of the die pad 20 in the third direction x. The first terminal 21 has an intermediate bend 213 and a tip 212. The intermediate bend 213 is the portion of the first terminal 21 that is bent so that the portion exposed from the sealing resin 7 is biased upward from the die pad 20 in the first direction z. The first terminal 21 is electrically connected to the drain electrode 131 via the die pad 20 and the bonding material 3. The first terminal 21 is the drain terminal of the semiconductor device A11.

[0053] The third terminal 23 is positioned spaced apart from the die pad 20 and extends along the second direction y. The third terminal 23 has a third pad 231 and a tip portion 232. The third pad 231 is closest to the die pad 20 in the second direction y. A source wire 53 is bonded to the third pad 231. The third terminal 23 is electrically connected to the source electrode 133 via the source wire 53. The third terminal 23 is the source terminal of the semiconductor device A11. A second wire 62 is also bonded to the third pad 231. The third terminal 23 is electrically connected to the second electrode 152 via the second wire 62.

[0054] At the second terminal 22, a gate wire 52 is connected to the second pad 221. The second terminal 22 is electrically connected to the gate electrode 132 via the gate wire 52. The second terminal 22 is the gate terminal of the semiconductor device A11.

[0055] The gate wire 52 is connected to the gate electrode 132 of the switching element 1 and the second pad 221 of the second terminal 22, making the gate electrode 132 of the switching element 1 and the second terminal 22 electrically conductive. The source wire 53 is connected to the source electrode 133 of the switching element 1 and the third pad 231 of the third terminal 23, making the source electrode 133 of the switching element 1 and the third terminal 23 electrically conductive. The first wire 61 is connected to the first electrode 151 of the switching element 1 (temperature sensing diode 15) and the fourth pad 241 of the fourth terminal 24, making the first electrode 151 of the temperature sensing diode 15 electrically conductive and the fourth terminal 24 electrically conductive. The second wire 62 is connected to the second electrode 152 of the switching element 1 (temperature sensing diode 15) and the third pad 231 of the third terminal 23, making the second electrode 152 of the temperature sensing diode 15 electrically conductive and the third terminal 23 electrically conductive.

[0056] The semiconductor device A11 has a first terminal 21, a second terminal 22, and a third terminal 23 corresponding to the drain terminal, gate terminal, and source terminal, as well as a fourth terminal 24. The switching element 1 is equipped with a temperature sensing diode 15, and the first electrode 151 of the temperature sensing diode 15 is conductive to the fourth terminal 24 via a first wire 61. On the other hand, the second electrode 152 of the temperature sensing diode 15 is conductive to another terminal (the third terminal 23 in this modified example) via a second wire 62. With this configuration, the junction temperature of the switching element 1 can be measured by passing current through the temperature sensing diode 15 using the fourth terminal 24 and the third terminal 23 which are conductive to the temperature sensing diode 15, measuring the voltage, and utilizing the temperature dependence of the diode's resistance change. Furthermore, in this embodiment, by providing a dedicated fourth terminal 24 for conductivity with the temperature sensing diode 15, the junction temperature can be measured using the temperature sensing diode 15 while driving the switching element 1.

[0057] In this embodiment, the second electrode 152 of the temperature sensing diode 15 is conductive to the third terminal 23, which is the source terminal. The source terminal (third terminal 23) is connected to ground as a reference potential, and its potential is stable at substantially 0V. By sharing this third terminal 23 as a terminal of the temperature sensing diode 15, the junction temperature can be measured stably even when current is flowing through the temperature sensing diode 15. Such a configuration is suitable for stably measuring the junction temperature when driving the switching element 1 while suppressing an increase in the number of terminals.

[0058] The first distance d13 in the third direction x between the center line C1 of the first terminal 21 and the center line C3 of the third terminal 23 is greater than the second distance d34 in the third direction x between the center line C3 of the third terminal 23 and the center line C4 of the fourth terminal 24, and the third distance d24 in the third direction x between the center line C4 of the fourth terminal 24 and the center line C2 of the second terminal 22. As a result, the fourth terminal 24 is located in the center of the three terminals 23, 24, and 22, which are arranged with relatively small distances between them. With this configuration, the fourth terminal 24, which is dedicated to conducting with the temperature sensing diode 15, can be easily distinguished from the other first to third terminals 21 to 23.

[0059] As shown in Figure 7, the third terminal 23, which is the source terminal, is adjacent to the first terminal 21, which is the drain terminal, in the third direction x when viewed in the first direction z. The first distance d13 between the first terminal 21 and the third terminal 23 in the third direction x is made relatively large, making it possible to appropriately secure the creepage distance between the first terminal 21 (drain terminal) and the third terminal 23 (source terminal). This makes it possible to increase the withstand voltage between the first terminal 21 (drain terminal) and the third terminal 23 (source terminal).

[0060] Figure 8 shows a second modified example of the semiconductor device A1 according to the first embodiment described above. In this modified example, the semiconductor device A12 differs from the semiconductor device A1 in the bonding state of the gate wire 52, source wire 53, and second wire 62. In Figure 8, the sealing resin 7 is transparent and is shown by dashed lines.

[0061] In the semiconductor device A12 shown in Figure 8, the configuration of the first terminal 21, second terminal 22, third terminal 23, and fourth terminal 24 is the same as that of the semiconductor device A1 (see Figure 2).

[0062] A source wire 53 is connected to the first pad 211 of the first terminal 21. The first terminal 21 is electrically connected to the source electrode 133 via the source wire 53. The first terminal 21 is the source terminal of the semiconductor device A12. A second wire 62 is also connected to the first pad 211. The first terminal 21 is electrically connected to the second electrode 152 via the second wire 62.

[0063] A gate wire 52 is connected to the second pad 221 of the second terminal. The second terminal 22 is electrically connected to the gate electrode 132 via the gate wire 52. The second terminal 22 is the gate terminal of the semiconductor device A12.

[0064] The third terminal 23 is electrically connected to the drain electrode 131 via the die pad 20 and bonding material 3. The third terminal 23 is the drain terminal of the semiconductor device A12.

[0065] The gate wire 52 is connected to the gate electrode 132 of the switching element 1 and the second pad 221 of the second terminal 22, making the gate electrode 132 of the switching element 1 and the second terminal 22 electrically conductive. The source wire 53 is connected to the source electrode 133 of the switching element 1 and the first pad 211 of the first terminal 21, making the source electrode 133 of the switching element 1 and the first terminal 21 electrically conductive. The first wire 61 is connected to the first electrode 151 of the switching element 1 (temperature sensing diode 15) and the fourth pad 241 of the fourth terminal 24, making the first electrode 151 of the temperature sensing diode 15 electrically conductive and the fourth terminal 24 electrically conductive. The second wire 62 is connected to the second electrode 152 of the switching element 1 (temperature sensing diode 15) and the first pad 211 of the first terminal 21, making the second electrode 152 of the temperature sensing diode 15 electrically conductive and the first terminal 21 electrically conductive.

[0066] The semiconductor device A12 has a first terminal 21, a second terminal 22, and a third terminal 23 corresponding to the source terminal, gate terminal, and drain terminal, as well as a fourth terminal 24. The switching element 1 is equipped with a temperature sensing diode 15, and the first electrode 151 of the temperature sensing diode 15 is conductive to the fourth terminal 24 via a first wire 61. On the other hand, the second electrode 152 of the temperature sensing diode 15 is conductive to another terminal (the first terminal 21 in this modified example) via a second wire 62. With this configuration, the junction temperature of the switching element 1 can be measured by passing current through the temperature sensing diode 15 using the fourth terminal 24 and the third terminal 23 which are conductive to the temperature sensing diode 15, measuring the voltage, and utilizing the temperature dependence of the diode's resistance change. In this embodiment, by providing a dedicated fourth terminal 24 for conductivity with the temperature sensing diode 15, the junction temperature can be measured using the temperature sensing diode 15 while driving the switching element 1.

[0067] In this embodiment, the second electrode 152 of the temperature sensing diode 15 is conductive to the first terminal 21, which is the source terminal. The source terminal (first terminal 21) is connected to ground as a reference potential, and its potential is stable at substantially 0V. By sharing this first terminal 21 as a terminal of the temperature sensing diode 15, the junction temperature can be measured stably even when current is flowing through the temperature sensing diode 15. Such a configuration is suitable for stably measuring the junction temperature when driving the switching element 1 while suppressing an increase in the number of terminals.

[0068] Regarding the first terminal 21, second terminal 22, and third terminal 23, which correspond to the source terminal, gate terminal, and drain terminal, the first terminal 21 (source terminal) and the second terminal 22 (gate terminal) are located on opposite sides of each other in the third direction x. The third terminal 23 (drain terminal) is located between the first terminal 21 and the second terminal 22 in the third direction x. With this configuration, the arrangement of the first terminal 21, second terminal 22, and third terminal 23 (source terminal, gate terminal, and drain terminal) is the same as that of conventional three-terminal switching devices (semiconductor devices), making it easy to mount on circuit boards and the like.

[0069] The first distance d13 in the third direction x between the center line C1 of the first terminal 21 and the center line C3 of the third terminal 23 is greater than the second distance d34 in the third direction x between the center line C3 of the third terminal 23 and the center line C4 of the fourth terminal 24, and the third distance d24 in the third direction x between the center line C4 of the fourth terminal 24 and the center line C2 of the second terminal 22. As a result, the fourth terminal 24 is located in the center of the three terminals 23, 24, and 22, which are arranged with relatively small distances between them. With this configuration, the fourth terminal 24, which is dedicated to conducting with the temperature sensing diode 15, can be easily distinguished from the other first to third terminals 21 to 23.

[0070] As shown in Figure 8, the first terminal 21, which is the source terminal, is adjacent to the third terminal 23, which is the drain terminal, in the third direction x when viewed in the first direction z. The first distance d13 between the first terminal 21 and the third terminal 23 in the third direction x is made relatively large, making it possible to appropriately secure the creepage distance between the first terminal 21 (source terminal) and the third terminal 23 (drain terminal). This makes it possible to increase the withstand voltage between the first terminal 21 (source terminal) and the third terminal 23 (drain terminal).

[0071] Figures 9 to 11 show a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device A2 of this embodiment includes a substrate 2A and a first terminal 41, a second terminal 42, a third terminal 43, and a fourth terminal 44, instead of the lead frame 2 of the above embodiment. In Figure 9, the sealing resin 7 is transparent and is shown by dashed lines.

[0072] In this embodiment, the substrate 2A has an insulating layer 25, a surface conductive layer 26, and a back metal layer 27. The insulating layer 25 is a plate-shaped member made of an insulating material. The insulating layer 25 is rectangular in a first z-view. The material of the substrate 2A is not particularly limited and may be made of ceramics such as alumina, aluminum nitride, silicon nitride, boron nitride, or graphite.

[0073] The surface conductive layer 26 is stacked on the upper surface of the substrate 2A and is mainly for forming a conductive path to the switching element 1. The material of the surface conductive layer 26 is not particularly limited and may be formed from a metal such as Cu or an alloy thereof, and may have a plating layer of Ni, Ag, etc. as needed. The method for forming the surface conductive layer 26 is not particularly limited and, for example, a metal plate member may be bonded to the upper surface of the substrate 2A.

[0074] As shown in Figures 10 and 11, the surface conductive layer 26 has a surface 26a and a back surface 26b. Surface 26a is the upper surface of the surface conductive layer 26. Surface 26a (the surface 26a portion of the drain electrode portion 261 described later) is the surface on which the switching element 1 is mounted, and the back surface 12 of the switching element 1 faces surface 26a. Back surface 26b is the lower surface of the surface conductive layer 26. Both surface 26a and back surface 26b are flat and face opposite each other in the first direction z.

[0075] The surface conductive layer 26 has a drain electrode portion 261 and a source electrode portion 263.

[0076] The drain electrode portion 261 is the portion on which the switching element 1 is mounted and to which the third terminal 43 is joined. The switching element 1 is supported by the insulating layer 25 and the drain electrode portion 261 (surface conductive layer 26) via the bonding material 3. In this embodiment, the drain electrode portion 261 is sized to occupy more than half of the surface conductive layer 26. The source electrode portion 263 is electrically connected to the source electrode 133 of the switching element 1 and to which the second terminal 42 is joined. The source electrode portion 263 is spaced apart from the drain electrode portion 261. The surface conductive layer 26 with the above configuration is an example of a "base portion".

[0077] As shown in Figures 10 and 11, the back metal layer 27 is stacked on the lower surface of the substrate 2A. The back metal layer 27 is insulated from the drain electrode portion 261 and the switching element 1. In this embodiment, the back metal layer 27 is formed to cover most of the lower surface of the substrate 2A in terms of size and shape. That is, in a first z-view, the back metal layer 27 overlaps substantially the entire drain electrode portion 261 and the switching element 1.

[0078] The first terminal 41, the second terminal 42, the third terminal 43, and the fourth terminal 44 constitute a conductive path between the outside of the semiconductor device A2 and the switching element 1. These terminals 41 to 44 are spaced apart from each other in the third direction x and are used when mounting the semiconductor device A2 on, for example, a circuit board (not shown).

[0079] As shown in Figure 9, the first terminal 41 extends along the second direction y and has a joint portion 411, a bent portion 412, and a tip portion 413. The joint portion 411 is the portion joined to the upper surface of the substrate 2A and is the base portion of the first terminal 41. The method of joining the joint portion 411 to the upper surface of the substrate 2A is not particularly limited, and various joining materials may be used as appropriate. The bent portion 412 is a bent-shaped portion connected to the joint portion 411, and the portion between the bent portion 412 and the tip portion 413 is shaped to separate from the back metal layer 27 in the first direction z. The tip portion 413 is the tip of the first terminal 41 located on the opposite side from the joint portion 411. A gate wire 52 is joined to the joint portion 411. The first terminal 41 is electrically connected to the gate electrode 132 via the gate wire 52. In this embodiment, the first terminal 41 is the gate terminal of the semiconductor device A2.

[0080] The second terminal 42 extends along the second direction y and is located on the outermost side (right side in the figure) in the third direction x when viewed in the first direction z. The second terminal 42 has a joint portion 421, a bent portion 422, and a tip portion 423. The joint portion 421 is the part joined to the source electrode portion 263 and is the base portion of the second terminal 42. The joining method between the joint portion 421 and the source electrode portion 263 is not particularly limited, and various methods such as joining using conductive bonding material, ultrasonic bonding, and resistance welding may be appropriately adopted. In this embodiment, a conductive bonding material is used. The bent portion 422 is a bent-shaped part connected to the joint portion 421, and the part between the bent portion 422 and the tip portion 423 is shaped to separate from the back metal layer 27 in the first direction z. The tip portion 423 is the tip of the second terminal 42 located on the opposite side from the joint portion 421. The source wire 53 is joined to the source electrode portion 263. The second terminal 42 is electrically connected to the source electrode 133 via the source electrode portion 263 and the source wire 53. In this embodiment, the second terminal 42 is the source terminal of the semiconductor device A2. A second wire 62 is also connected to the source electrode portion 263. The second terminal 42 is electrically connected to the second electrode 152 via the source electrode portion 263 and the second wire 62.

[0081] The third terminal 43 extends along the second direction y and is positioned midway between the first terminal 41 and the second terminal 42 in the third direction x when viewed in the first direction z. The third terminal 43 has a joint portion 431, a bent portion 432, and a tip portion 433. The joint portion 431 is the portion joined to the drain electrode portion 261 and is the base portion of the third terminal 43. The joining method between the joint portion 431 and the drain electrode portion 261 is not particularly limited, and various methods such as joining using a conductive joining material, ultrasonic joining, and resistance welding may be used as appropriate. In this embodiment, a conductive joining material is used. The bent portion 432 is a bent-shaped portion connected to the joint portion 431, and the portion between the bent portion 432 and the tip portion 433 is shaped to separate from the back metal layer 27 in the first direction z. The tip portion 433 is the tip of the third terminal 43 located on the opposite side from the joint portion 431. The second terminal 42 is electrically connected to the drain electrode 131 via the drain electrode portion 261 and the bonding material 3. In this embodiment, the third terminal 43 is the drain terminal of the semiconductor device A2.

[0082] The fourth terminal 44 extends along the second direction y and is positioned between the second terminal 42 and the third terminal 43 in the third direction x when viewed in the first direction z. The fourth terminal 44 has a joint portion 441, a bent portion 442, a tip portion 443, and a bent portion 444. The joint portion 441 is the portion joined to the upper surface of the substrate 2A and is the base portion of the fourth terminal 44. The method of joining the joint portion 441 to the upper surface of the substrate 2A is not particularly limited, and various joining materials may be used as appropriate. The bent portion 442 is a bent-shaped portion connected to the joint portion 441, and the portion between the bent portion 442 and the tip portion 443 is shaped to separate from the back metal layer 27 in the first direction z. The tip portion 443 is the tip of the fourth terminal 44 located on the opposite side from the joint portion 441. The bent portion 444 is located between the bent portion 442 and the tip portion 443 and is provided closer to the bent portion 442.

[0083] The bent portion 444 is shaped to separate the portion between the bent portion 444 and the tip portion 443 from the back metal layer 27 in the first direction z. As a result, the tip portion of the fourth terminal 44 is biased to one side of the first direction z (the side facing the surface 26a of the surface conductive layer 26) compared to the bent portion 444. Because the fourth terminal 44 has a bent portion 444, the tip portion 443 of the fourth terminal 44 is biased to the aforementioned side of the first direction z (the side facing the surface 26a of the surface conductive layer 26) compared to the tip portions 413, 423, and 433 of the first terminal 41, second terminal 42, and third terminal 43, respectively.

[0084] The first wire 61 is connected to the junction 441 of the fourth terminal 44. The fourth terminal 44 is electrically connected to the first electrode 151 via the first wire 61.

[0085] As shown in Figure 9, the distance in the third direction x between the center line C1 of the first terminal 41 (gate terminal) and the center line C3 of the third terminal 43 (drain terminal) (first distance d13) is greater than the distance in the third direction x between the center line C3 of the third terminal 43 (drain terminal) and the center line C4 of the fourth terminal 44 (second distance d34). Also, the first distance d13 is greater than the distance in the third direction x between the center line C4 of the fourth terminal 44 and the center line C2 of the second terminal 42 (source terminal) (third distance d24). In this embodiment, the second distance d34 and the third distance d24 are substantially the same. Furthermore, the sum of the second distance d34 and the third distance d24 is substantially the same as the first distance d13.

[0086] As shown in Figure 9, the gate wire 52 is connected to the junction 411 of the gate electrode 132 of the switching element 1 and the first terminal 41, thereby making the gate electrode 132 of the switching element 1 and the first terminal 41 electrically connected. In Figure 10, the gate wire 52 is omitted.

[0087] The source wire 53 is connected to the source electrode 133 and the source electrode portion 263 of the switching element 1, and provides electrical conductivity between the source electrode 133 of the switching element 1 and the second terminal 42. The source wire 53 is omitted in Figures 10 and 11.

[0088] The first wire 61 is connected to the junction 441 between the first electrode 151 and the fourth terminal 44 of the switching element 1 (temperature sensing diode 15), thereby making the first electrode 151 and the fourth terminal 44 of the temperature sensing diode 15 electrically connected. In Figure 11, the first wire 61 is omitted.

[0089] The second wire 62 is connected to the second electrode 152 of the switching element 1 (temperature sensing diode 15) and the source electrode portion 263 of the second terminal 42, thereby making the second electrode 152 of the temperature sensing diode 15 and the second terminal 42 electrically connected.

[0090] The sealing resin 7 covers and protects the switching element 1, a portion of the substrate 2A, a portion of the first terminal 41, a portion of the second terminal 42, a portion of the third terminal 43, a portion of the fourth terminal 44, the gate wire 52, the source wire 53, the first wire 61, and the second wire 62.

[0091] In this embodiment, the sealing resin 7 has a resin main surface 71, a resin back surface 72, a pair of resin first side surfaces 73, and a pair of resin second side surfaces 74. The resin main surface 71 is the upper surface of the sealing resin 7 shown in Figures 10 and 11, and is the surface facing the same side as the surface 26a of the surface conductive layer 26. The resin back surface 72 is the lower surface of the sealing resin 7 shown in Figures 10 and 11, and is the surface facing the same side as the back surface 26b of the surface conductive layer 26. The resin main surface 71 and the resin back surface 72 are surfaces facing the first direction z, and are facing opposite directions from each other.

[0092] As shown in Figures 10 and 11, in this embodiment, the entire surface of one side of the back metal layer 27 is exposed from the resin back surface 72 of the sealing resin 7. This one side of the back metal layer 27 is flush with the resin back surface 72.

[0093] The pair of first resin sides 73 are surfaces formed spaced apart in the second direction y, as shown in Figure 11. The pair of first resin sides 73 face opposite each other in the second direction y. The upper end of the first resin side 73 shown in Figure 11 is connected to the main resin surface 71, and the lower end of the first resin side 73 shown in Figure 11 is connected to the back surface 72. In this embodiment, a portion of the first terminal 41, second terminal 42, third terminal 43, and fourth terminal 44 is exposed from one of the first resin sides 73.

[0094] The pair of second resin sides 74 are surfaces formed spaced apart in the third direction x, as shown in Figure 10. The pair of second resin sides 74 face opposite each other in the third direction x. The upper end of the second resin side 74 shown in Figure 10 is connected to the main resin surface 71, and the lower end of the second resin side 74 shown in Figure 10 is connected to the back surface 72.

[0095] Next, the effects and advantages of this embodiment will be described.

[0096] The semiconductor device A2 of this embodiment is equipped with a first terminal 41, a second terminal 42, and a third terminal 43 corresponding to the gate terminal, source terminal, and drain terminal, as well as a fourth terminal 44. The switching element 1 is equipped with a temperature sensing diode 15, and the first electrode 151 of the temperature sensing diode 15 is conductive to the fourth terminal 44 via a first wire 61. On the other hand, the second electrode 152 of the temperature sensing diode 15 is conductive to another terminal (the second terminal 42 in this embodiment) via a second wire 62. With this configuration, the junction temperature of the switching element 1 can be measured by passing current through the temperature sensing diode 15 using the fourth terminal 44 and the second terminal 42 which are conductive to the temperature sensing diode 15, measuring the voltage, and utilizing the temperature dependence of the diode's resistance change. Furthermore, in this embodiment, by providing a dedicated fourth terminal 44 for conductivity with the temperature sensing diode 15, the junction temperature can be measured using the temperature sensing diode 15 while driving the switching element 1.

[0097] In this embodiment, the second electrode 152 of the temperature sensing diode 15 is conductive to the second terminal 42, which is the source terminal. The source terminal (second terminal 42) is connected to ground as a reference potential, and its potential is stable at substantially 0V. By sharing this second terminal 42 as a terminal of the temperature sensing diode 15, the junction temperature can be measured stably even when current is flowing through the temperature sensing diode 15. Such a configuration is suitable for stably measuring the junction temperature when driving the switching element 1 while suppressing an increase in the number of terminals.

[0098] Regarding the first terminal 41, second terminal 42, and third terminal 43, which correspond to the gate terminal, source terminal, and drain terminal, the first terminal 41 (gate terminal) and the second terminal 42 (source terminal) are located on opposite sides of each other in the third direction x. The third terminal 43 (drain terminal) is located between the first terminal 41 and the second terminal 42 in the third direction x. With this configuration, the arrangement of the first terminal 41, second terminal 42, and third terminal 43 (gate terminal, source terminal, and drain terminal) is the same as that of conventional three-terminal switching devices (semiconductor devices), making it easy to mount on circuit boards and the like.

[0099] The first distance d13 in the third direction x between the center line C1 of the first terminal 41 and the center line C3 of the third terminal 43 is greater than the second distance d34 in the third direction x between the center line C3 of the third terminal 43 and the center line C4 of the fourth terminal 44, and the third distance d24 in the third direction x between the center line C4 of the fourth terminal 44 and the center line C2 of the second terminal 42. As a result, the fourth terminal 44 is located in the center of the three terminals 43, 44, and 42, which are arranged with relatively small distances between them. With this configuration, the fourth terminal 44, which is dedicated to conducting with the temperature sensing diode 15, can be easily distinguished from the other first to third terminals 41 to 43.

[0100] Furthermore, at the fourth terminal 44, the tip end is biased toward one side of the first direction z (the side facing the surface 26a of the surface conductive layer 26). This configuration also makes it easy to distinguish the fourth terminal 44, which is dedicated to conducting with the temperature sensing diode 15, from the other first to third terminals 41 to 43. Moreover, if the portion of the fourth terminal 44 exposed from the sealing resin 7, from the bent portion 444 to the sealing resin 7, is covered with an insulating resin, for example by potting, it is possible to appropriately secure the creepage distance between the third terminal 43 (drain terminal) and the second terminal 42 (source terminal). In this case, it is possible to increase the withstand voltage between the third terminal 43 (drain terminal) and the second terminal 42 (source terminal).

[0101] The fourth terminal 44 may be configured without a bent portion 444. In this case, the fourth terminal 44 extends straight along the second direction y, and the position of the fourth terminal 44 in the first direction z (position in the vertical direction) is substantially aligned with the positions of the first terminal 41, the second terminal 42, and the third terminal 43 in the first direction z.

[0102] Figures 12 and 13 show a semiconductor device according to a third embodiment of the present disclosure. The semiconductor device A3 of this embodiment differs from the semiconductor device A1 of the above embodiment in the configuration of the temperature sensing diode 15. In Figure 12, the sealing resin 7 is transparent and is shown with dashed lines.

[0103] In this embodiment, the first electrode 151 of the temperature sensing diode 15 is located on the main surface 11 of the element, while the second electrode 152 is located on the back surface 12 of the element. The pn junction diode portion 150 is formed in the thickness direction (first direction z) of the switching element 1. In this embodiment, the drain electrode 131 located on the back surface 12 of the element also serves as the second electrode 152. The third terminal 23, which is the drain terminal, is electrically connected to the drain electrode 131 (second electrode 152) via the die pad 20 and bonding material 3. In this embodiment, the second wire 62 is not provided.

[0104] The semiconductor device A3 of this embodiment is equipped with a first terminal 21, a second terminal 22, and a third terminal 23 corresponding to the gate terminal, source terminal, and drain terminal, as well as a fourth terminal 24. The switching element 1 is equipped with a temperature sensing diode 15, and the first electrode 151 of the temperature sensing diode 15 is conductive to the fourth terminal 24 via the first wire 61. On the other hand, the second electrode 152 of the temperature sensing diode 15 is conductive to another terminal (the third terminal 23 in this embodiment). With this configuration, the junction temperature of the switching element 1 can be measured by passing current through the temperature sensing diode 15 using the fourth terminal 24 and the third terminal 23 which are conductive to the temperature sensing diode 15, measuring the voltage, and utilizing the temperature dependence of the diode's resistance change. Furthermore, in this embodiment, by providing a dedicated fourth terminal 24 for conductivity with the temperature sensing diode 15, the junction temperature can be measured using the temperature sensing diode 15 while driving the switching element 1.

[0105] Regarding the first terminal 21, second terminal 22, and third terminal 23, which correspond to the gate terminal, source terminal, and drain terminal, the first terminal 21 (gate terminal) and the second terminal 22 (source terminal) are located on opposite sides of each other in the third direction x. The third terminal 23 (drain terminal) is located between the first terminal 21 and the second terminal 22 in the third direction x. With this configuration, the arrangement of the first terminal 21, second terminal 22, and third terminal 23 (gate terminal, source terminal, and drain terminal) is the same as that of conventional three-terminal switching devices (semiconductor devices), making it easy to mount on circuit boards and the like.

[0106] The first distance d13 in the third direction x between the center line C1 of the first terminal 21 and the center line C3 of the third terminal 23 is greater than the second distance d34 in the third direction x between the center line C3 of the third terminal 23 and the center line C4 of the fourth terminal 24, and the third distance d24 in the third direction x between the center line C4 of the fourth terminal 24 and the center line C2 of the second terminal 22. As a result, the fourth terminal 24 is located in the center of the three terminals 23, 24, and 22, which are arranged with relatively small distances between them. With this configuration, the fourth terminal 24, which is dedicated to conducting with the temperature sensing diode 15, can be easily distinguished from the other first to third terminals 21 to 23.

[0107] At the fourth terminal 24, the tip end is biased toward one side of the first direction z (the side facing the surface 20a of the die pad 20) relative to the bent portion 243. This configuration also makes it easy to distinguish the fourth terminal 24, which is dedicated to conducting with the temperature sensing diode 15, from the other first to third terminals 21 to 23. Furthermore, if the portion of the fourth terminal 24 exposed from the sealing resin 7, from the bent portion 243 to the sealing resin 7, is covered with an insulating resin, for example by potting, it is possible to appropriately secure the creepage distance between the third terminal 23 (drain terminal) and the second terminal 22 (source terminal). In this case, it is possible to increase the withstand voltage between the third terminal 23 (drain terminal) and the second terminal 22 (source terminal).

[0108] Figures 14 and 15 show a semiconductor device according to a fourth embodiment of the present disclosure. The semiconductor device A4 of this embodiment differs from the semiconductor device A1 described above in the specific configuration of the first terminals 21 to the fourth terminals 24, and accordingly, the bonding state of the gate wire 52, source wire 53, first wire 61 and second wire 62 differs from that of the semiconductor device A1 described above. In Figure 14, the sealing resin 7 is transparent and is shown by dashed lines.

[0109] In the semiconductor device A4 shown in Figure 14, the first terminal 21 is positioned spaced apart from the die pad 20 and extends to one side in the second direction y (downward in the figure). The first terminal 21 is positioned on the outermost side in the third direction x (left side in the figure) when viewed in the first direction z. The first terminal 21 has a first pad 211 and a tip portion 212. The first terminal 21 is electrically connected to the gate electrode 132 via the gate wire 52. In this embodiment, the first terminal 21 is the gate terminal of the semiconductor device A4.

[0110] The second terminal 22 is spaced apart from the die pad 20 and is located on one side of the second direction y (the lower side in Figure 14). The second terminal 22 has a second pad 221 and a plurality of tip portions 222. The second pad 221 is located from the center to the right end in the third direction x when viewed in the first direction z. The plurality of tip portions 222 are arranged at intervals from each other in the third direction x, and each is connected to the second pad 221. The second terminal 22 (second pad 221) is electrically connected to the source electrode 133 via the source wire 53. In this embodiment, the second terminal 22 is the source terminal of the semiconductor device A4. A second wire 62 is joined to the second pad 221. The second terminal 22 is electrically connected to the second electrode 152 via the second wire 62.

[0111] The third terminal 23 is connected to the die pad 20 and is located on the other side of the die pad 20 in the second direction y (upper side in Figure 14). The third terminal 23 is elongated in the third direction x. As shown in Figure 15, the third terminal 23 is electrically connected to the drain electrode 131 via the die pad 20 and the bonding material 3. In this embodiment, the third terminal 23 is the drain terminal of the semiconductor device A4.

[0112] The fourth terminal 24 is positioned spaced apart from the die pad 20 and extends to one side in the second direction y (the lower side in Figure 14). The fourth terminal 24 is positioned towards the left in the third direction x when viewed in the first direction z. The fourth terminal 24 has a fourth pad 241 and a tip portion 242. The first wire 61 is bonded to the fourth pad 241 of the fourth terminal 24. The fourth terminal 24 is electrically connected to the first electrode 151 via the first wire 61.

[0113] As shown in Figure 14, the gate wire 52 is connected to the gate electrode 132 of the switching element 1 and the first pad 211 of the first terminal 21, thereby making the gate electrode 132 of the switching element 1 and the first terminal 21 electrically connected. The source wire 53 is connected to the source electrode 133 of the switching element 1 and the second pad 221 of the second terminal 22, thereby making the source electrode 133 of the switching element 1 and the second terminal 22 electrically connected. Note that the source wire 53 is omitted in Figure 15.

[0114] The first wire 61 is connected to the first electrode 151 of the switching element 1 (temperature sensing diode 15) and the fourth pad 241 of the fourth terminal 24, thereby making the first electrode 151 and the fourth terminal 24 of the temperature sensing diode 15 electrically conductive. The second wire 62 is connected to the second electrode 152 of the switching element 1 (temperature sensing diode 15) and the second pad 221 of the second terminal 22, thereby making the second electrode 152 and the second terminal 22 of the temperature sensing diode 15 electrically conductive. In Figure 15, the second wire 62 is omitted.

[0115] The semiconductor device A4 has a first terminal 21, a second terminal 22, and a third terminal 23 corresponding to the gate terminal, source terminal, and drain terminal, as well as a fourth terminal 24. The switching element 1 is equipped with a temperature sensing diode 15, and the first electrode 151 of the temperature sensing diode 15 is conductive to the fourth terminal 24 via a first wire 61. On the other hand, the second electrode 152 of the temperature sensing diode 15 is conductive to another terminal (the second terminal 22 in this embodiment) via a second wire 62. With this configuration, the junction temperature of the switching element 1 can be measured by passing current through the temperature sensing diode 15 using the fourth terminal 24 and the second terminal 22 which are conductive to the temperature sensing diode 15, measuring the voltage, and utilizing the temperature dependence of the diode's resistance change. Furthermore, in this embodiment, by providing a dedicated fourth terminal 24 for conductivity with the temperature sensing diode 15, the junction temperature can be measured using the temperature sensing diode 15 while driving the switching element 1.

[0116] In this embodiment, the second electrode 152 of the temperature sensing diode 15 is conductive to the second terminal 22, which is the source terminal. The source terminal (second terminal 22) is connected to ground as a reference potential, and its potential is stable at substantially 0V. By sharing this second terminal 22 as a terminal of the temperature sensing diode 15, the junction temperature can be measured stably even when current is flowing through the temperature sensing diode 15. Such a configuration is suitable for stably measuring the junction temperature when driving the switching element 1 while suppressing an increase in the number of terminals.

[0117] Figure 16 shows a semiconductor device according to a fifth embodiment of the present disclosure. The semiconductor device A5 of this embodiment is provided with an additional fifth terminal 250 compared to the semiconductor device A4 described above, and consequently the bonding state of the second wire 62 is different from that of the semiconductor device A4. In Figure 16, the sealing resin 7 is transparent and is indicated by dashed lines.

[0118] The fifth terminal 250 is positioned spaced apart from the die pad 20 and extends to one side in the second direction y (the lower side in Figure 16). The fifth terminal 250 is positioned closer to the center in the third direction x when viewed in the first direction z. The fifth terminal 250 has a fifth pad 251 and a tip portion 252. The second wire 62 is bonded to the fifth pad 251. The fifth terminal 250 is electrically connected to the second electrode 152 via the second wire 62.

[0119] As shown in Figure 16, the gate wire 52 is connected to the gate electrode 132 of the switching element 1 and the first pad 211 of the first terminal 21, thereby making the gate electrode 132 of the switching element 1 and the first terminal 21 electrically connected. The source wire 53 is connected to the source electrode 133 of the switching element 1 and the second pad 221 of the second terminal 22, thereby making the source electrode 133 of the switching element 1 and the second terminal 22 electrically connected.

[0120] The first wire 61 is connected to the first electrode 151 of the switching element 1 (temperature sensing diode 15) and the fourth pad 241 of the fourth terminal 24, thereby making the first electrode 151 and the fourth terminal 24 of the temperature sensing diode 15 electrically connected. The second wire 62 is connected to the second electrode 152 of the switching element 1 (temperature sensing diode 15) and the fifth pad 251 of the fifth terminal 250, thereby making the second electrode 152 and the fifth terminal 250 of the temperature sensing diode 15 electrically connected.

[0121] The semiconductor device A5 has a first terminal 21, a second terminal 22, and a third terminal 23 corresponding to the gate terminal, source terminal, and drain terminal, as well as a fourth terminal 24 and a fifth terminal 250. The switching element 1 is equipped with a temperature sensing diode 15, the first electrode 151 of the temperature sensing diode 15 is conductive to the fourth terminal 24 via a first wire 61. On the other hand, the second electrode 152 of the temperature sensing diode 15 is conductive to the fifth terminal 250 via a second wire 62. With this configuration, the junction temperature of the switching element 1 can be measured by passing current through the temperature sensing diode 15 using the fourth terminal 24 and the fifth terminal 250 which are conductive to the temperature sensing diode 15, measuring the voltage, and utilizing the temperature dependence of the diode's resistance change. Furthermore, in this embodiment, by providing dedicated fourth terminal 24 and fifth terminal 250 for conductivity with the temperature sensing diode 15, the junction temperature can be measured using the temperature sensing diode 15 while driving the switching element 1.

[0122] The semiconductor device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways.

[0123] For example, Figures 17 and 18 show modified examples of the semiconductor device according to the third embodiment. In the semiconductor device A3 of the third embodiment (see Figures 12 and 13), the second electrode 152 (for example, the cathode electrode or anode electrode) of the temperature sensor (temperature detection diode) 15 was shared with the drain electrode 131 of the switching element 1. That is, the second electrode 152 and the drain electrode 131 were directly joined to each other without the use of individual connecting members such as wires, or the second electrode 152 and the drain electrode 131 were integrally formed with each other. In the semiconductor device A6 of this modified example, one electrode of the temperature sensor 15 (the cathode electrode 152 in the illustrated example) is directly connected to the source electrode 133 of the switching element 1 on the upper surface of the element. That is, in the semiconductor device A6, the cathode electrode 152 and the source electrode 133 are shared within the chip.

[0124] Specifically, in semiconductor device A6, a diode 150 provided on the main surface of the SiC substrate (switching element 1) is used as the temperature sensor 15 (see Figure 18). The temperature sensor 15 includes a cathode made of polysilicon doped with p-type impurities and an anode made of polysilicon doped with n-type impurities. An insulating film is formed between the SiC substrate and the temperature sensor 15, but it is not shown in the figure.

[0125] A gate electrode 132 is formed in the active region of the SiC substrate via a gate insulating film. The active region includes a source region doped with n-type impurities and a body region doped with p-type impurities, but these are not shown in the diagram.

[0126] An interlayer insulating film is formed on the surface of the SiC substrate, and a source electrode 133 made of a metal such as aluminum is formed on the interlayer insulating film. The gate electrode 132 is electrically isolated from the source electrode 133, source region, and body region by the interlayer insulating film and the gate insulating film. The source electrode 133 is electrically connected to the source region and body region of the SiC substrate through an opening provided in the interlayer insulating film.

[0127] An anode electrode 151 and a cathode electrode 152 are formed on the upper part of the temperature sensor 15. The anode electrode 151 and the cathode electrode 152 are electrically connected to the anode and cathode of the diode, respectively, through an opening in the interlayer insulating film. As described above, in this modified example, the cathode electrode 152 is shared with the source electrode 133. In the illustrated example, the cathode electrode 152 and the source electrode 133 are electrically connected to each other via an intermediate conductive connecting portion 152a. The cathode electrode 152, the intermediate connecting portion 152a, and the source electrode 133 are integrally formed as a whole from the same conductive material, and the dotted lines shown in Figures 17 and 18 to indicate the boundaries between these components are for convenience only. Furthermore, unless otherwise stated, the configuration of the semiconductor device A6 is the same as the configuration of the semiconductor device A2 of the second embodiment shown in Figures 9 to 11, for example, except that the two electrodes described above are shared, and a description of the common components is omitted.

[0128] According to the configuration shown in Figures 17 and 18, the junction temperature of the switching element 1 can be measured by using terminals 42 and 44, which are conductive to the temperature sensor, i.e., the temperature sensing diode 15, to pass current through the temperature sensing diode 15 and measure the voltage, thereby utilizing the temperature dependence of the diode's resistance change. Furthermore, in this modified example, by providing a dedicated terminal 44 for conductivity with the temperature sensing diode 15, the junction temperature can be measured using the temperature sensing diode 15 while driving the switching element 1.

[0129] In the modified example above, the source electrode 133 and the source terminal 42 are connected by a wire 53, but a metal plate made of copper (for example, a long metal piece with a rectangular cross-section) may be used instead of the wire 53. In this case, the source electrode 133 and the source terminal 42 and the metal plate are joined via a bonding material such as solder. The connection between the gate electrode 132 and the gate terminal 41, and the connection between the anode electrode 151 and the terminal 44 may be made by wires 52 and 61 as shown in the figure, or a metal plate may be used instead of wires 52 and 61. When the source electrode 133 and the source terminal 42 are joined via a metal plate, it is preferable to form a nickel plating layer or a nickel / palladium / gold plating layer on the source electrode 133 (and consequently the cathode electrode 152). In this case, the anode electrode 151 and the gate electrode 132 will also have the same plating structure as the source electrode 133.

[0130] This disclosure includes the configuration described in the following addendum.

[0131] Note 1. A switching element having a main surface and a back surface facing opposite directions in a first direction, a drain electrode, a gate electrode, and a source electrode, wherein the connection between the drain electrode and the source electrode is controlled on / off by applying a drive voltage between the gate electrode and the source electrode while a potential difference is applied between the drain electrode and the source electrode, A base having a front surface and a back surface facing opposite directions in the first direction, and supporting the switching element such that the back surface of the element faces the front surface, It comprises a first terminal, a second terminal, a third terminal, and a fourth terminal, each extending in a second direction perpendicular to the first direction, The switching element includes a temperature sensing diode having a first electrode arranged on the main surface of the element. The drain electrode, the gate electrode, and the source electrode are each electrically connected to one of the first terminal, the second terminal, and the third terminal. A semiconductor device in which the first electrode is electrically connected to the fourth terminal via a first wire. Note 2. The first terminal, the second terminal, the third terminal, and the fourth terminal are spaced apart from each other in a third direction that extends along one side of the second direction and is perpendicular to both the first and second directions. The semiconductor device according to Appendix 1, wherein the first and second terminals are located on opposite outermost sides in the third direction, the third terminal is located between the first and second terminals in the third direction, and the fourth terminal is located between the second and third terminals. Note 3. The temperature sensing diode has a second electrode, The semiconductor device as described in Appendix 2, wherein the second electrode is electrically connected to any of the first terminal, the second terminal, and the third terminal. Note 4. The semiconductor device according to Appendix 3, wherein the first distance between the first terminal and the third terminal in the third direction is greater than the second distance between the third terminal and the fourth terminal in the third direction, and the third distance between the fourth terminal and the second terminal in the third direction. Note 5. The semiconductor device according to Appendix 4, wherein the gate electrode is conductive to the first terminal, the source electrode is conductive to the second terminal, and the drain electrode is conductive to the third terminal. Note 6. The semiconductor device described in Appendix 5, wherein the second electrode is electrically connected to the second terminal. Note 7. The semiconductor device according to Appendix 4, wherein the drain electrode is conductive to the first terminal, the gate electrode is conductive to the second terminal, and the source electrode is conductive to the third terminal. Note 8. The semiconductor device described in Appendix 7, wherein the second electrode is electrically connected to the third terminal. Note 9. The semiconductor device according to Appendix 3 or 4, wherein the second electrode is arranged on the main surface of the element and is electrically connected to any of the first terminal, the second terminal, and the third terminal via a second wire. Note 10. The semiconductor device described in Appendix 3 or 4, wherein the second electrode is located on the back surface of the element. Note 11. The electrode and the source electrode are arranged on the main surface of the element, and the drain electrode is arranged on the back surface of the element. The semiconductor device according to any one of the appendices 2 to 4, wherein the gate electrode and the source electrode are electrically connected to any of the first terminal, second terminal, and third terminal via the gate wire and source wire. Note 12. A semiconductor device according to any one of appendices 2 to 11, comprising a lead frame including the base and the third terminal, wherein the third terminal extends from the base along the second direction. Note 13. A semiconductor device according to any one of appendices 2 to 11, comprising a substrate having a surface conductive layer constituting the base and an insulating layer on which the surface conductive layer is laminated. Note 14. The semiconductor device according to any one of the appendices 2 to 13, wherein at least one of the fourth terminals in the second direction is biased toward the side facing the surface of the base in the first direction, compared to one of the first terminals in the first direction of each of the first terminal, second terminal, and third terminal. Note 15. The first terminal, the second terminal, and the fourth terminal are arranged on one side of the second direction and spaced apart from each other in a third direction that is perpendicular to both the first and second directions. The third terminal is located on the other side of the second direction, The semiconductor device according to Appendix 1, wherein the gate electrode is conductive to the first terminal, the source electrode is conductive to the second terminal, and the drain electrode is conductive to the third terminal. Note 16. The temperature sensing diode has a second electrode, The semiconductor device described in Appendix 15, wherein the second electrode is electrically connected to the second terminal. Note 17. It comprises a fifth terminal extending to one side in the second direction, The temperature sensing diode has a second electrode, The semiconductor device described in Appendix 15, wherein the second electrode is electrically connected to the fifth terminal. Note 18. A semiconductor device according to any one of appendices 15 to 17, comprising a lead frame including the base and the third terminal, wherein the third terminal extends from the base to the other side in the second direction. Note 19. A semiconductor device according to any one of appendices 1 to 18, comprising the base, a portion of each of the first to fourth terminals, and a sealing resin covering the switching element. Note 20. The semiconductor device according to any one of the appendices 1 to 19, wherein the switching element is a SiC switching element. Note 21. It comprises a switching element, a first external terminal, a second external terminal, a third external terminal, and a fourth external terminal. The aforementioned switching element is The main surface and back surface of the element, which face opposite each other in the first direction, The first main electrode (source electrode / emitter electrode) is arranged on the main surface of the element, A electrode disposed on the main surface of the element, The second main electrode (drain electrode / collector electrode) is located on the back surface of the element, A temperature sensing diode having an anode and a cathode, It has a first electrode that is electrically connected to one of the anode and cathode and is positioned on the main surface of the element, The first external terminal is electrically connected to the second main electrode, The second external terminal is electrically connected to the gate electrode, The third external terminal is electrically connected to the first main electrode, The fourth external terminal is electrically connected to the first electrode, A semiconductor device in which the anode is electrically connected to one of the first external terminal and the fourth external terminal, and the cathode is electrically connected to the other of the first external terminal and the fourth external terminal. Note 22. The semiconductor device according to Appendix 21, further comprising a sealing resin that seals the switching element and seals a portion of each of the first external terminal, the second external terminal, the third external terminal, and the fourth external terminal. Note 23. A first conductive member that connects the first main electrode and the third external terminal, A second conductive member connects the gate electrode and the second external terminal to each other, The semiconductor device according to Appendix 21 or Appendix 22, further comprising a third conductive member connecting the first electrode and the fourth external terminal. Note 24. The semiconductor device according to Appendix 23, wherein the first conductive member, the second conductive member, and the third conductive member are either a bonding wire or a metal plate, the bonding wire is made of either aluminum or copper, and the metal plate is made of copper. Note 25. The semiconductor device according to Appendix 24, further comprising a joining member for fixing the aforementioned metal plate to the object to be joined. Note 26. The aforementioned joining member is made of solder, as described in Appendix 25, for the semiconductor device. Note 27. A semiconductor device according to any one of appendices 21 to 26, wherein the connection between the first main electrode and the second main electrode is controlled on / off by applying a driving voltage between the gate electrode and the first main electrode while a potential difference is applied between the first main electrode and the second main electrode. Note 28. The semiconductor device according to any one of appendices 21 to 27, further comprising a base that faces the back surface of the element and supports the switching element. Note 29. It comprises a switching element, a first external terminal, a second external terminal, a third external terminal, and a fourth external terminal. The aforementioned switching element is The main surface and back surface of the element, which face opposite each other in the first direction, The first main electrode (source electrode / emitter electrode) is arranged on the main surface of the element, A electrode disposed on the main surface of the element, The second main electrode (drain electrode / collector electrode) is located on the back surface of the element, A temperature sensing diode having an anode and a cathode, It has a first electrode that is electrically connected to one of the anode and cathode and is positioned on the main surface of the element, The first external terminal is electrically connected to the second main electrode, The second external terminal is electrically connected to the gate electrode, The third external terminal is electrically connected to the first main electrode, The fourth external terminal is electrically connected to the first electrode, A semiconductor device in which the anode is electrically connected to one of the third external terminal and the fourth external terminal, and the cathode is electrically connected to the other of the third external terminal and the fourth external terminal. Note 30. The semiconductor device according to Appendix 29, further comprising a sealing resin that seals the switching element and seals a portion of each of the first external terminal, the second external terminal, the third external terminal, and the fourth external terminal. Note 31. A first conductive member that connects the first main electrode and the third external terminal, A second conductive member connects the gate electrode and the second external terminal to each other, The semiconductor device according to Appendix 29 or Appendix 30, further comprising a third conductive member that connects the first electrode and the fourth external terminal to each other. Note 32. The semiconductor device according to Appendix 31, wherein the first conductive member, the second conductive member, and the third conductive member are either a bonding wire or a metal plate, the bonding wire is made of either aluminum or copper, and the metal plate is made of copper. Note 33. The semiconductor device according to Appendix 32, further comprising a joining member for fixing the aforementioned metal plate to the object to be joined. Note 34. The aforementioned joining member is made of solder, as described in Appendix 33, for the semiconductor device. Note 35. A semiconductor device according to any one of Appendix 29 to Appendix 34, wherein the connection between the first main electrode and the second main electrode is controlled on / off by applying a driving voltage between the gate electrode and the first main electrode while a potential difference is applied between the first main electrode and the second main electrode. Note 36. A semiconductor device according to any one of appendices 29 to 35, further comprising a base that faces the back surface of the element and supports the switching element. [Explanation of symbols]

[0132] A1,A11,A12,A2,A3,A4,A5,A6: Semiconductor device 1: Switching element 11: Main surface of element 12: Back surface of element 131: Drain electrode 132: Grid electrode 133: Source electrode 15: Temperature sensing diode 150: pn junction diode section 151: first electrode 152: Second electrode 2: Lead frame 2A: Substrate 20: Die pad (base) 20a: Surface 20b: Back side 20c: Through hole 21: 1st terminal 22: 2nd terminal 23: 3rd terminal 24: 4th terminal 250: Fifth terminal 211: First pad 221: Second pad 231: Pad 3 241: Pad 4 251: Pad 5 212,222,232,242,252:Tip 213: Intermediate bending section 233: Intermediate bending section 243: Bending section 25: Insulating layer 26: Surface conductive layer 26a: Surface 26b: Back surface 261: Drain electrode section 263: Source electrode section 27: Back metal layer 3: Bonding material 41: First terminal 42: 2nd terminal 43: 3rd terminal 44: 4th terminal 411,421,431,441: Joint 412,422,432,442: Bending section 413,423,433,443:Tip 444: Bent section 52: Gate wire 53: Source wire 61: First wire 62: Second wire 7: Sealing resin 71: Main surface of resin 72: Back surface of resin 73: First side surface of resin 74: Second side surface of resin 75: Recess 76: Through hole in resin C1,C2,C3,C4: Center line d13: First distance d24: 3rd distance d34: 2nd distance x: 3rd direction y: 2nd direction z: 1st direction

Claims

1. Switching element and A sealing resin covering the switching element, Each comprises a first external terminal, a second external terminal, a third external terminal, and a fourth external terminal, each exposed from the sealing resin. The aforementioned switching element is The main surface and back surface of the element, which face opposite each other in the first direction, The first main electrode (source electrode / emitter electrode) is arranged on the main surface of the element, A electrode disposed on the main surface of the element, A second main electrode (drain electrode / collector electrode) is located on the back surface of the element, A temperature sensing diode having an anode and a cathode, It has a first electrode that is electrically connected to one of the anode and cathode and is positioned on the main surface of the element, The first external terminal is electrically connected to the second main electrode, The second external terminal is electrically connected to the gate electrode, The third external terminal is electrically connected to the first main electrode, The fourth external terminal is electrically connected to the first electrode, The anode is electrically connected to one of the first external terminal and the fourth external terminal, and the cathode is electrically connected to the other of the first external terminal and the fourth external terminal. The first external terminal has a wider portion in a third direction perpendicular to the first direction that is larger than the maximum dimension of the fourth external terminal in the third direction. The semiconductor device has a fourth external terminal having a bent portion that is bent such that its tip is biased to one side in the first direction.

2. A first conductive member that connects the first main electrode and the third external terminal, A second conductive member that connects the gate electrode and the second external terminal, The semiconductor device according to claim 1, further comprising a third conductive member that connects the first electrode and the fourth external terminal to each other.

3. The semiconductor device according to claim 2, wherein the first conductive member, the second conductive member, and the third conductive member are either a bonding wire or a metal plate, the bonding wire is made of either aluminum or copper, and the metal plate is made of copper.

4. The semiconductor device according to claim 3, further comprising a joining member for fixing the metal plate to the object to be joined.

5. The semiconductor device according to claim 4, wherein the joining member is made of solder.

6. The semiconductor device according to any one of claims 1 to 5, wherein the connection between the first main electrode and the second main electrode is controlled on / off by applying a driving voltage between the gate electrode and the first main electrode while a potential difference is applied between the first main electrode and the second main electrode.

7. The semiconductor device according to any one of claims 1 to 6, further comprising a base portion that faces the back surface of the element and supports the switching element.

8. Switching element and A sealing resin covering the switching element, Each comprises a first external terminal, a second external terminal, a third external terminal, and a fourth external terminal, each exposed from the sealing resin. The aforementioned switching element is The main surface and back surface of the element, which face opposite each other in the first direction, The first main electrode (source electrode / emitter electrode) is arranged on the main surface of the element, A electrode disposed on the main surface of the element, A second main electrode (drain electrode / collector electrode) is located on the back surface of the element, A temperature sensing diode having an anode and a cathode, It has a first electrode that is electrically connected to one of the anode and cathode and is positioned on the main surface of the element, The first external terminal is electrically connected to the second main electrode, The second external terminal is electrically connected to the gate electrode, The third external terminal is electrically connected to the first main electrode, The fourth external terminal is electrically connected to the first electrode, The anode is electrically connected to one of the third external terminal and the fourth external terminal, and the cathode is electrically connected to the other of the third external terminal and the fourth external terminal. The first external terminal has a wider portion in a third direction perpendicular to the first direction that is larger than the maximum dimension of the fourth external terminal in the third direction. The semiconductor device has a fourth external terminal having a bent portion that is bent such that its tip is biased to one side in the first direction.

9. The first conductive member further connects the first main electrode and the third external terminal, The sealing resin has a first resin surface facing a second direction perpendicular to the first and third directions, The second external terminal and the fourth external terminal are exposed from the first side surface of the resin. The semiconductor device according to claim 1 or 8, wherein the first electrode is located on the first side surface of the resin, more than the connection portion between the first main electrode and the first conductive member, when viewed in the third direction.

10. The second external terminal and the fourth external terminal are located adjacent to each other, and the first external terminal and the third external terminal are located adjacent to each other. The semiconductor device according to claim 8, wherein the distance between the second external terminal and the fourth external terminal in the third direction is smaller than the distance between the first external terminal and the third external terminal in the third direction.

11. The semiconductor device according to claim 8, wherein the first external terminal, the second external terminal, and the fourth external terminal are located opposite each other with respect to the switching element in a second direction orthogonal to the first and third directions.

12. The device further comprises a second pad, a third pad, and a fourth pad covered with the aforementioned sealing resin, The second pad is connected to the second external terminal, The third pad is connected to the third external terminal, The fourth pad is connected to the fourth external terminal, The semiconductor device according to claim 11, wherein the dimension of the third pad in the third direction is greater than the dimension of the second pad in the third direction and the dimension of the fourth pad in the third direction.

13. The semiconductor device according to claim 11, wherein, in view of the second direction, the second external terminal and the fourth external terminal overlap with the first external terminal.

14. A first conductive member that connects the first main electrode and the third external terminal, A second conductive member that connects the gate electrode and the second external terminal, The semiconductor device according to claim 8, further comprising a third conductive member that connects the first electrode and the fourth external terminal to each other.

15. The semiconductor device according to claim 14, wherein the first conductive member, the second conductive member, and the third conductive member are either a bonding wire or a metal plate, the bonding wire is made of either aluminum or copper, and the metal plate is made of copper.

16. The semiconductor device according to claim 15, further comprising a joining member for fixing the metal plate to the object to be joined.

17. The semiconductor device according to claim 16, wherein the joining member is made of solder.

18. The semiconductor device according to claim 8 and any one of claims 10 to 17, wherein the connection between the first main electrode and the second main electrode is controlled on / off by applying a driving voltage between the gate electrode and the first main electrode while a potential difference is applied between the first main electrode and the second main electrode.

19. The semiconductor device according to any one of claims 8 and 10 to 17, further comprising a base that faces the back surface of the element and supports the switching element.

Images