Method for manufacturing optoelectronic devices

Abstract

The present invention provides - providing a support (3) for supporting a plurality of three-dimensional semiconductor structures (2); - forming a sacrificial portion (30) beneath a first set (21) of 3D structures (2a) of the plurality of three-dimensional semiconductor structures (2); - forming a barrier portion (50) around the sacrificial portion (30), said barrier portion (50) having a base wall (51) extending below the sacrificial portion (30) and a lateral wall (52) extending to the edge of the sacrificial portion (30); - forming an access trench (132) to the sacrificial portion (30), said access trench (132) extending continuously along the lateral wall (52) of the barrier portion (50); - etching the sacrificial portion (30) from the access trench (132); - removing the first set (21) of 3D structures (2a); The present invention relates to a method for manufacturing an optoelectronic device (1), comprising: