Circuit board cleaning apparatus and circuit board cleaning method

Abstract

To appropriately clean a substrate having a protrusion.SOLUTION: A substrate cleaning device comprises: a holding portion for holding a substrate having a protrusion on at least a part of an edge of an upper surface thereof; and a cleaning nozzle for discharging first cleaning fluid toward the protrusion of the substrate. The first cleaning fluid is discharged to a region whose end on a radially inner side of the substrate is positioned on an upper surface of the protrusion and whose end on a radially outer side of the substrate is positioned on an outer side of the substrate not overlapping the substrate in a plan view.SELECTED DRAWING: Figure 10

Description

Technical Field

[0001] The technology disclosed in this specification relates to a substrate cleaning technology. Substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, substrates for flat panel displays (FPDs) such as organic EL (electroluminescence) display devices, substrates for optical discs, substrates for magnetic discs, substrates for magneto-optical discs, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (i.e., FEDs), or substrates for solar cells, etc.

Background Art

[0002] Manufacturing processes of semiconductor devices or liquid crystal display devices, etc. include a step of supplying a chemical solution to a substrate for chemical solution treatment and a step of supplying a cleaning solution such as pure water (DIW) to the substrate for cleaning treatment.

[0003] On the other hand, there are several types of shapes of substrates to be processed, including, for example, substrates having convex portions on the edges (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] When cleaning a substrate having convex portions as described above, the ejected cleaning liquid hits the corners of the convex portions, etc., causing liquid splashing, and the processing chamber may be contaminated by the spraying of the cleaning liquid generated by the liquid splashing. Also, the cleaning of the lower surface of the substrate tends to be insufficient.

[0006] The technology disclosed in this specification was developed in view of the problems described above, and is a technology for properly cleaning substrates having protrusions. [Means for solving the problem]

[0007] A substrate cleaning apparatus, which is a first aspect of the technology disclosed in this specification, is a substrate cleaning apparatus for cleaning a substrate, wherein a protrusion is formed on at least a part of the edge of the upper surface of the substrate, and the substrate cleaning apparatus includes a holding part for holding the substrate, The holding part A cleaning nozzle for discharging the first cleaning solution toward the protrusion of the substrate. The device comprises a central nozzle that discharges a second cleaning liquid from the center of the substrate in a plan view, which is held in the holding part, The first cleaning solution is discharged to a range where the radially inner end of the substrate is located on the upper surface of the protrusion, and the radially outer end of the substrate is located outside the substrate and does not overlap with the substrate in a plan view. The second cleaning liquid discharged to the central part of the substrate reaches the protrusions on the edges of the substrate, the first cleaning liquid and the second cleaning liquid are the same type of liquid, the second cleaning liquid is discharged from the central nozzle to clean the entire upper surface of the substrate, and then, while the second cleaning liquid is discharged from the central nozzle, the first cleaning liquid is discharged from the cleaning nozzle to clean the protrusions. .

[0008] A second embodiment of the technology disclosed in this specification, which is a substrate cleaning apparatus, relates to the first embodiment, The amount of the first cleaning solution discharged from the cleaning nozzle is less than the amount of the second cleaning solution discharged from the central nozzle. .

[0009] A third embodiment of the technology disclosed in this specification is a substrate cleaning apparatus relating to the second embodiment, further comprising a rotating part for rotating the holding part, wherein the second cleaning liquid discharged onto the substrate flows from the central part of the rotating substrate to the protrusion.

[0010] A fourth embodiment of the technology disclosed in this specification is a substrate cleaning apparatus relating to any one of the first to third embodiments, further comprising edge pins that contact the edge of the substrate, wherein the first cleaning fluid is discharged into the area including the edge pins.

[0011] A fifth aspect of the technology disclosed in this specification relates to a substrate cleaning apparatus of any one of the first to fourth aspects, wherein the holding part holds the substrate with a Bernoulli chuck.

[0012] A sixth aspect of the technology disclosed in this specification is a substrate cleaning apparatus relating to any one of the first to fifth aspects, further comprising a hydrophilic glass plate bonded to the lower surface of the substrate with an adhesive.

[0013] A seventh aspect of the technology disclosed in this specification is a substrate cleaning method for cleaning a substrate, comprising the steps of: forming a protrusion on at least a part of the edge of the upper surface of the substrate and holding the substrate; held The first cleaning solution is discharged toward the protrusions of the substrate. 1 Process and a second step of discharging a second cleaning solution toward the center of the held substrate The first cleaning solution is discharged to a range where the radially inner end of the substrate is located on the upper surface of the protrusion, and the radially outer end of the substrate is located outside the substrate and does not overlap with the substrate in a plan view. The second cleaning liquid discharged to the center of the substrate reaches the protrusions on the edges of the substrate, the first cleaning liquid and the second cleaning liquid are the same type of liquid, the second step discharges the second cleaning liquid to clean the entire upper surface of the substrate, and then, while discharging the second cleaning liquid in the second step, the first cleaning liquid is discharged in the first step to clean the protrusions. ru. [Effects of the Invention]

[0014] According to at least the first seven aspects of the technology disclosed in this specification, the discharge range of the first cleaning liquid discharged from the cleaning nozzle can be limited to the protruding portion of the substrate, so that the stepped portion of the protrusion is not included in the discharge range of the first cleaning liquid. Therefore, splashing of the first cleaning liquid discharged onto the substrate at the stepped portion can be suppressed.

[0015] Furthermore, the purposes, features, aspects, and advantages related to the technology disclosed in this specification will become even clearer from the detailed description and accompanying drawings provided below. [Brief explanation of the drawing]

[0016] [Figure 1] This is a schematic plan view showing an example of the configuration of a substrate processing apparatus according to an embodiment. [Figure 2] This figure shows an example of the configuration of the control unit, as illustrated in Figure 1. [Figure 3] This diagram schematically shows an example of the configuration of a processing unit according to the embodiment. [Figure 4] It is a cross-sectional view showing an example of the shape of a substrate to be subjected to substrate processing or cleaning in an embodiment. [Figure 5] It is a cross-sectional view showing a state where a protective plate is adhered to the lower surface of the substrate shown in FIG. 4. [Figure 6] Among the configurations of the spin chuck shown in FIG. 3, it is a diagram showing an example of the configuration related to the gas flow path. [Figure 7] It is a plan view of the plate. [Figure 8] It is a flowchart showing the operation in the processing unit among the operations of the substrate processing apparatus. [Figure 9] It is a diagram for explaining the positional relationship between the edge nozzle and the substrate. [Figure 10] It is a diagram showing an example of the cleaning liquid discharged from the edge nozzle. [Figure 11] It is a diagram for explaining the positional relationship between the edge nozzle and the substrate. [Figure 12] It is a diagram showing an example of the cleaning liquid discharged from the edge nozzle.

Mode for Carrying Out the Invention

[0017] Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features and the like are also shown for the purpose of explaining the technology, but these are examples, and not all of them are necessarily essential features for the embodiments to be implementable.

[0018] The drawings are shown schematically, and for the convenience of explanation, omissions or simplifications of configurations are made in the drawings as appropriate. Also, the mutual relationships of the sizes and positions of the configurations shown in different drawings are not necessarily accurately described and can be changed as appropriate. Also, in drawings such as plan views that are not cross-sectional views, hatching may be added to facilitate understanding of the content of the embodiments.

[0019] Furthermore, in the following explanations, similar components will be denoted by the same symbols, and their names and functions will also be the same. Therefore, detailed explanations of them may be omitted to avoid redundancy.

[0020] Furthermore, in the descriptions contained in this specification, when a certain component is described as "equipped with," "includes," or "has," unless otherwise specified, it is not an exclusive expression that excludes the existence of other components.

[0021] Furthermore, even if ordinal numbers such as "first" or "second" are used in the descriptions contained herein, these terms are used for convenience to facilitate understanding of the embodiments, and the contents of the embodiments are not limited to the order that may result from these ordinal numbers.

[0022] Furthermore, in the descriptions contained in this specification, expressions such as "...axis positive direction" or "...axis negative direction" refer to the direction along the arrow of the illustrated ...axis as the positive direction, and the direction opposite to the arrow of the illustrated ...axis as the negative direction.

[0023] Furthermore, even if terms such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back" are used in the descriptions of this specification to indicate a specific position or direction, these terms are used for convenience to facilitate understanding of the embodiments and are not related to the actual position or direction in which the embodiments are carried out.

[0024] Furthermore, in the descriptions contained herein, when a "top surface of..." or "bottom surface of..." is used, it includes not only the top surface or bottom surface of the component in question itself, but also the state in which other components are formed on the top surface or bottom surface of the component in question. That is, for example, when it is stated that "B is provided on the top surface of A", this does not preclude the presence of another component "C" between A and B.

[0025] <Embodiment> The following describes a substrate processing apparatus according to this embodiment. The substrate processing apparatus is an apparatus that performs substrate processing, including cleaning of the substrate.

[0026] <About the configuration of the substrate processing unit> Figure 1 is a schematic plan view showing an example of the configuration of a substrate processing apparatus 1 according to this embodiment. The substrate processing apparatus 1 comprises a load port 601, an indexer robot 602, a center robot 603, a control unit 90, and at least one processing unit 600 (four processing units in Figure 1).

[0027] The processing unit 600 is a single-wafer device that can be used for substrate processing, and specifically, it is a device that removes organic matter adhering to the substrate W. The organic matter adhering to the substrate W is, for example, a used resist film. This resist film is, for example, one that was used as an implantation mask for the ion implantation process.

[0028] The processing unit 600 may have a chamber 180. In that case, by controlling the atmosphere inside the chamber 180 with the control unit 90, the processing unit 600 can perform substrate processing in a desired atmosphere.

[0029] The control unit 90 can control the operation of each component in the substrate processing apparatus 1 (such as the shutter 50C, adjustment valve 56, adjustment valve 62, rotary drive source 152A, rotary drive source 160A, and rotary drive unit 193, which will be described later). Carrier C is a container for housing substrates W. Load port 601 is a container holding mechanism that holds multiple carriers C. Indexer robot 602 can transport substrates W between load port 601 and substrate mounting section 604. Center robot 603 can transport substrates W between substrate mounting section 604 and processing unit 600.

[0030] With the above configuration, the indexer robot 602, the substrate mounting unit 604, and the center robot 603 function as a transport mechanism that transports the substrate W between the respective processing unit 600 and the load port 601.

[0031] The unprocessed substrate W is removed from the carrier C by the indexer robot 602. The unprocessed substrate W is then transferred to the center robot 603 via the substrate mounting unit 604.

[0032] The central robot 603 loads the unprocessed substrate W into the processing unit 600. The processing unit 600 then processes the substrate W.

[0033] The processed substrates W in the processing unit 600 are removed from the processing unit 600 by the center robot 603. The processed substrates W are then passed through other processing units 600 as needed, and then transferred to the indexer robot 602 via the substrate mounting unit 604. The indexer robot 602 loads the processed substrates W into the carrier C. Through this process, the substrates W are processed.

[0034] Figure 2 shows an example of the configuration of the control unit 90 shown in Figure 1. The control unit 90 may be composed of a general computer having electrical circuits. Specifically, the control unit 90 includes a central processing unit (i.e., CPU) 91, read-only memory (i.e., ROM) 92, random access memory (i.e., RAM) 93, recording device 94, input unit 96, display unit 97, and communication unit 98, and a bus line 95 connecting them to each other.

[0035] ROM92 stores the basic program. RAM93 is used as a workspace for the CPU91 when performing predetermined processing. The recording device94 is composed of a non-volatile recording device such as flash memory or a hard disk drive. The input unit96 is composed of various switches or a touch panel and receives input setting instructions such as processing recipes from the user. The display unit97 is composed of, for example, a liquid crystal display device and lamps and displays various information under the control of the CPU91. The communication unit98 has a data communication function via a local area network (LAN) or the like.

[0036] The recording device 94 has multiple modes pre-configured for controlling each of the configurations in the substrate processing apparatus 1 shown in Figure 1. When the CPU 91 executes the processing program 94P, one of the above multiple modes is selected, and each configuration is controlled in that mode. The processing program 94P may be recorded on an external recording medium. Using this recording medium, the processing program 94P can be installed in the control unit 90. Furthermore, some or all of the functions performed by the control unit 90 do not necessarily have to be implemented by software, but may be implemented by hardware such as dedicated logic circuits.

[0037] Figure 3 is a schematic diagram showing an example of the configuration of the processing unit 600 according to this embodiment. Note that, for ease of understanding, some components may be omitted or simplified in this diagram.

[0038] The processing unit 600 performs various processes on the substrate W, such as fluid processing using a processing liquid (i.e., processing liquid including chemicals, cleaning solutions, or rinsing solutions) or gas, processing using electromagnetic waves such as ultraviolet light, or physical cleaning (e.g., brush cleaning or spray nozzle cleaning).

[0039] As shown in Figure 3, the processing unit 600 comprises a box-shaped processing chamber 50 having an internal space, a spin chuck 51 that holds a single substrate W in a horizontal position within the processing chamber 50 and rotates the substrate W around a vertical axis of rotation Z1 passing through the center of the substrate W, and a cylindrical processing cup 511 that surrounds the spin chuck 51 around the axis of rotation Z1 of the substrate W.

[0040] The processing chamber 50 is surrounded by a box-shaped partition wall 50A. The partition wall 50A has an opening 50B formed therein for loading and unloading substrates W into and out of the processing chamber 50.

[0041] The opening 50B is opened and closed by a shutter 50C. The shutter 50C is raised and lowered by a shutter lifting mechanism (not shown here) between a closed position that covers the opening 50B (shown by a dashed line in Figure 3) and an open position that opens the opening 50B (shown by a solid line in Figure 3).

[0042] When loading or unloading substrates W, the central robot 603 uses its robotic hand to access the processing chamber 50 through the opening 50B. This allows for placing unprocessed substrates W on the upper surface of the spin chuck 51 or removing processed substrates W from the spin chuck 51.

[0043] As shown in Figure 3, the spin chuck 51 comprises a plate 101 facing the lower surface of the substrate W, a rotating shaft 192 connected to the lower surface of the plate 101, and a rotational drive unit 193 that rotates the rotating shaft 192 around the rotation axis Z1.

[0044] As shown in Figure 3, the processing unit 600 includes a central nozzle 52 that discharges a cleaning solution such as pure water (DIW) toward the center of the upper surface of the substrate W held by the spin chuck 51, an arm 152 to which the central nozzle 52 is attached at its tip, a supply pipe 54 that guides the cleaning solution from a cleaning solution supply source (not shown here) to the central nozzle 52, and an adjustment valve 56 that opens and closes the inside of the supply pipe 54. In this embodiment, the case in which the cleaning solution is discharged from the central nozzle 52 is shown, but the processing solution discharged from the central nozzle 52 may be a chemical solution for processing the substrate.

[0045] The arm 152 comprises a rotary drive source 152A and an arm portion 152B that is rotatable by the rotary drive source 152A attached to one end and has a central nozzle 52 attached to the other end.

[0046] The arm 152 is rotated by the rotation drive source 152A, which allows the central nozzle 52 attached to the tip of the arm 152B to move along the upper surface of the substrate W held by the spin chuck 51. In other words, the central nozzle 52 attached to the tip of the arm 152B can move horizontally. Here, the drive of the rotation drive source 152A is controlled by the control unit 90.

[0047] The opening and closing of the adjustment valve 56 is controlled by the control unit 90. When cleaning fluid is supplied to the central nozzle 52, the adjustment valve 56 is opened. On the other hand, when the supply of cleaning fluid to the central nozzle 52 is stopped, the adjustment valve 56 is closed.

[0048] Furthermore, as shown in Figure 3 as an example, the processing unit 600 includes an edge nozzle 60 that discharges a cleaning liquid such as pure water (DIW) toward the edge of the upper surface of the substrate W held by the spin chuck 51, an arm 160 to which the edge nozzle 60 is attached at its tip, a supply pipe 61 that supplies cleaning liquid from a cleaning liquid supply source (not shown here) to the edge nozzle 60, and an adjustment valve 62 that switches between supplying and stopping the cleaning liquid from the supply pipe 61 to the edge nozzle 60.

[0049] The arm 160 comprises a rotary drive source 160A and an arm portion 160B that is rotatable by the rotary drive source 160A attached to one end and has an edge nozzle 60 attached to the other end.

[0050] The arm 160 is rotated by the rotation drive source 160A, which allows the edge nozzle 60 attached to the tip of the arm 160B to move along the upper surface of the substrate W held by the spin chuck 51. In other words, the edge nozzle 60 attached to the tip of the arm 160B can move horizontally. Here, the drive of the rotation drive source 160A is controlled by the control unit 90.

[0051] With cleaning fluid being supplied to the substrate W by the central nozzle 52, cleaning fluid is also supplied to the substrate W from the edge nozzles 60, thereby effectively washing away foreign matter adhering to the substrate W. Further details will be described later.

[0052] The processing cup 511 is positioned to surround the spin chuck 51 and moves up and down vertically by a motor (not shown). The upper part of the processing cup 511 moves up and down between an upper position where its upper end is above the substrate W held by the spin chuck 51 and a lower position where it is below the substrate W.

[0053] The processing liquid that splashes outward from the top surface of the substrate W is collected on the inner surface of the processing cup 511. The processing liquid collected in the processing cup 511 is then appropriately drained to the outside of the processing chamber 50 through a drain port 513 located at the bottom of the processing chamber 50 and inside the processing cup 511.

[0054] Furthermore, an exhaust port 515 leading to the processing cup 511 is provided on the side of the processing chamber 50. The atmosphere inside the processing chamber 50 is appropriately discharged to the outside of the processing chamber 50 through the exhaust port 515.

[0055] <Regarding the shape of the circuit board> The substrate W has a thin, flat shape. In plan view, the substrate W has a substantially circular shape. The substrate W has a protrusion 12 formed on its edge and a main part 13. In Figure 4, the protrusion 12 is provided over the entire circumference of the substrate W, but the protrusion 12 may be provided on only a part of the circumference of the substrate W.

[0056] The main portion 13 is the part of the substrate W located inside the protrusion 12. The semiconductor device is formed on the main portion 13. The protrusion 12 has a convex shape relative to the main portion 13.

[0057] Figure 4 is a cross-sectional view showing an example of the shape of the substrate W that is to be processed or cleaned in this embodiment. Figure 5 is a cross-sectional view showing the state in which the protective plate 15 is adhered to the lower surface of the substrate W shown in Figure 4.

[0058] The substrate W has a recess 14 formed by the main portion 13 being recessed compared to the convex portion 12. The recess 14 is formed, for example, by a grinding process. In Figure 5, a glass protective plate 15 is bonded to the surface of the substrate W opposite to the surface where the recess 14 is formed (i.e., the bottom surface of the substrate W). The protective plate 15 is hydrophilic. The protective plate 15 is attached, for example, to the substrate body 11.

[0059] The main portion 13 of the substrate W has a thickness T1. The combined thickness of the main portion 13 of the substrate W and the protective plate 15 is a thickness T3. The thickness T1 is, for example, 10 [μm] or more and 200 [μm] or less. The thickness T3 is, for example, 800 [μm] or more and 1200 [μm] or less.

[0060] The substrate W may consist only of the substrate body 11, or it may include at least one of a resin coating, resin tape, resin sheet, and resin film in addition to the substrate body 11.

[0061] The protrusion 12 of the substrate W has a thickness T4. The combined thickness of the protrusion 12 of the substrate W and the protective plate 15 is a thickness T6. The thickness T4 is, for example, 600 [μm] or more and 1000 [μm] or less. The thickness T6 is, for example, 1400 [μm] or more and 2200 [μm] or less.

[0062] Figure 6 shows an example of the configuration related to the gas flow path in the spin chuck 51 shown in Figure 3. For simplicity, the rotary drive unit 193 and other components are omitted from the illustration in Figure 6.

[0063] The spin chuck 51 includes a plate 101. The plate 101 has a substantially disc shape. The plate 101 has an upper surface 102. The upper surface 102 is substantially horizontal. The upper surface 102 is substantially flat.

[0064] The rotating shaft 192 is connected to the lower part of the plate 101. The rotating shaft 192 rotates the plate 101 by the drive of a rotational drive unit 193 (not shown). In this way, the plate 101 rotates about the axis of rotation A3. The axis of rotation A3 is parallel to the Z-axis direction. The axis of rotation A3 passes through the center of the plate 101.

[0065] Figure 7 is a plan view of plate 101. The top surface 102 of plate 101 is circular in plan view. The top surface 102 of plate 101 is larger than the substrate W in plan view.

[0066] The spin chuck 51 is equipped with a plurality (for example, 30) of fixing pins 103. The fixing pins 103 support the edges of the substrate W from below. Each fixing pin 103 is fixed to the plate 101.

[0067] The fixing pins 103 are positioned on the edge of the upper surface 102 of the plate 101. In a plan view, the fixing pins 103 are arranged on a circumference around the axis of rotation A3. Each fixing pin 103 is spaced apart from the others.

[0068] Referring to Figures 6 and 7, the fixing pin 103 protrudes upward (in the positive Z-axis direction) from the upper surface 102 of the plate 101. The fixing pin 103 contacts the lower surface 16 of the substrate W (the lower surface of the protrusion 12 in Figure 4, or the lower surface of the edge of the protective plate 15 in Figure 5). As a result, the fixing pin 103 supports the substrate W at a position higher than the upper surface 102 of the plate 101. In Figure 7, the substrate W supported by the fixing pin 103 is shown by a dashed line.

[0069] The fixing pin 103 does not contact the upper surface 17 of the substrate W. The fixing pin 103 allows the substrate W to move upward relative to the fixing pin 103. The fixing pin 103 does not contact the edge 20 of the substrate W (i.e., the side surface of the substrate W). The fixing pin 103 itself allows the substrate W to slide relative to the fixing pin 103. Thus, the fixing pin 103 itself does not hold the substrate W.

[0070] The spin chuck 51 is equipped with a gas outlet 104. The gas outlet 104 is formed on the upper surface 102 of the plate 101. In a plan view, the gas outlet 104 is positioned to overlap with the substrate W supported by the fixing pins 103. The gas outlet 104 blows gas upward (in the positive Z-axis direction). The gas outlet 104 blows gas between the upper surface 102 of the plate 101 and the lower surface 16 of the substrate W supported by the fixing pins 103 (the lower surface of the protrusion 12 in Figure 4, or the lower surface of the edge of the protective plate 15 in Figure 5). The gas outlet 104 blows gas onto the substrate W from a position below the substrate W supported by the fixing pins 103. The gas is supplied between the upper surface 102 of the plate 101 and the lower surface 16 of the substrate W supported by the fixing pins 103.

[0071] The gas flows along the lower surface 16 of the substrate W, which is supported by the fixing pins 103. As a result, the gas outlet 104 draws the substrate W in. Specifically, the flow of gas along the lower surface 16 of the substrate W creates negative pressure. That is, the air pressure on the lower surface 16 of the substrate W is less than the air pressure on the upper surface 17 of the substrate W. Consequently, according to Bernoulli's principle, a downward force acts on the substrate W (Bernoulli chuck). In other words, the substrate W is drawn downward. The substrate W is drawn toward the gas outlet 104 and the plate 101. However, the gas outlet 104 does not come into contact with the substrate W. Similarly, the plate 101 does not come into contact with the substrate W.

[0072] The gas outlet 104 draws the substrate W downwards, and the fixing pins 103 contact the lower surface 16 of the substrate W, thereby supporting and holding the substrate W in a predetermined position. The suction force acting on the substrate W prevents it from sliding horizontally relative to the fixing pins 103. In other words, the spin chuck 51 holds the substrate W.

[0073] The gas outlet 104 comprises one outlet 105 and multiple outlets 106. Outlet 105 is located in the center of the upper surface 102 of the plate 101. Outlet 105 is located on the rotation axis A3 of the plate 101. Outlet 106 is located radially outward from the rotation axis A3 of the plate 101 than outlet 105. Also, outlet 106 is located radially inward from the rotation axis A3 of the plate 101 than the fixing pin 103. In plan view, the outlets 106 are arranged on the circumference around the rotation axis A3.

[0074] The spin chuck 51 includes a gas supply passage 107 and a gas supply passage 108. Gas supply passage 107 supplies gas to the outlet 105. Gas supply passage 108 supplies gas to the outlet 106. Parts of gas supply passage 107 and gas supply passage 108 are formed inside the plate 101. Gas supply passage 107 has a first end and a second end. The first end of gas supply passage 107 is connected to a gas supply source 109. The second end of gas supply passage 107 is connected to the outlet 105. Gas supply passage 108 also has a first end and a second end. The first end of gas supply passage 108 is connected to a gas supply source 109. The second end of gas supply passage 108 is connected to the outlet 106. The gas supplied to outlets 105 and 106 is, for example, nitrogen gas or air. The gas supplied to outlets 105 and 106 is, for example, a high-pressure gas or a compressed gas.

[0075] The spin chuck 51 includes a blow-out adjustment unit 111 and a blow-out adjustment unit 112. The blow-out adjustment unit 111 is provided in the gas supply passage 107. The blow-out adjustment unit 112 is provided in the gas supply passage 108. The blow-out adjustment unit 111 adjusts the flow rate of gas blown out by the outlet 105. That is, the blow-out adjustment unit 111 adjusts the flow rate of gas supplied to the outlet 105. The blow-out adjustment unit 112 adjusts the flow rate of gas blown out by the outlet 106. That is, the blow-out adjustment unit 112 adjusts the flow rate of gas supplied to the outlet 106. As the flow rate of gas blown out by the outlet 105 increases, the suction force acting on the substrate W increases. As the flow rate of gas blown out by the outlet 106 increases, the suction force acting on the substrate W increases.

[0076] The discharge adjustment units 111 and 112 are operable independently of each other. Therefore, the flow rate of the gas discharged from outlet 105 and the flow rate of the gas discharged from outlet 106 can be adjusted independently of each other. Each of the discharge adjustment units 111 and 112 includes, for example, a flow control valve. Each of the discharge adjustment units 111 and 112 may further include an on / off valve.

[0077] As shown in Figure 7, the spin chuck 51 includes a plurality (for example, six) of position adjustment pins 113. The position adjustment pins 113 are supported by the plate 101. The position adjustment pins 113 are movable horizontally relative to the plate 101. By moving the position adjustment pins 113 relative to the plate 101, the position adjustment pins 113 can contact the substrate W supported by the fixed pins 103, and can also move away from the substrate W supported by the fixed pins 103. More specifically, the position adjustment pins 113 can contact the edge 20 of the substrate W supported by the fixed pins 103. The position adjustment pins 113 adjust the position of the substrate W supported by the fixed pins 103. The position adjustment pins 113 adjust the position of the substrate W in the horizontal direction. The position adjustment pins 113 position the center J of the substrate W supported by the fixed pins 103 on the rotation axis A3 of the plate 101.

[0078] In this embodiment, the position of the position adjustment pin 113 in contact with the substrate W is referred to as the "adjustment position." The position of the position adjustment pin 113 away from the substrate W is referred to as the "retracted position." The position adjustment pin 113 is movable between the adjustment position and the retracted position.

[0079] The position adjustment pins 113 are positioned on the edge of the upper surface 102 of the plate 101. In a plan view, the position adjustment pins 113 are arranged on a circumference around the rotation axis A3. The position adjustment pins 113 are positioned at approximately the same height as the substrate W supported by the fixing pins 103.

[0080] The spin chuck 51 is equipped with a plurality (for example, six) of lift pins 116. The lift pins 116 are positioned on the periphery of the upper surface 102 of the plate 101. The position adjustment pins 113 are arranged in a circle around the rotation axis A3 in a plan view.

[0081] The lift pin 116 is supported by the plate 101. The lift pin 116 is supported so as to be movable in the vertical direction (Z-axis direction) relative to the plate 101. The lift pin 116 supports the substrate W. The lift pin 116 moves the substrate W supported by the lift pin 116 in the vertical direction (Z-axis direction).

[0082] The lift pin 116, when positioned in the upper position, facilitates the transfer of the substrate W to the center robot 603 during loading and unloading of the substrate W. The lift pin 116, when positioned in the lower position, transfers the substrate W to the fixing pin 103. After the lift pin 116 transfers the substrate W to the fixing pin 103, the lift pin 116 moves further downward relative to the plate 101, separating from the substrate W supported by the fixing pin 103.

[0083] <About the operation of the substrate processing unit> Next, an example of the operation of the substrate processing apparatus 1 will be explained with reference to Figure 8. Specifically, a substrate processing method including cleaning of the substrate W will be described. Figure 8 is a flowchart showing the operation of the processing unit 600 within the operation of the substrate processing apparatus 1.

[0084] The indexer robot 602 transports the substrate W from the carrier C in the load port 601 to the substrate mounting section 604. The center robot 603 transports the substrate W from the substrate mounting section 604 to one processing unit 600. The processing unit 600 processes the substrate W. The center robot 603 transports the substrate W from the processing unit 600 back to the substrate mounting section 604. The indexer robot 602 transports the substrate W from the substrate mounting section 604 back to the carrier C in the load port 601.

[0085] In the processing unit 600, the edges and bottom surface of the substrate W are supported by a plurality of guide pins and fixing pins 103. This allows the substrate W to be held in the spin chuck 51.

[0086] Here, the blow-out adjustment unit 111 and the blow-out adjustment unit 112 are appropriately controlled by the control unit 90, causing an inert gas such as nitrogen to be blown out from the outlets 105 and 106. As a result, the gas blown out from outlet 105 is blown onto the center of the lower surface of the substrate W and then flows radially outward from the substrate W. The gas blown out from outlet 106 is blown onto the periphery of the lower surface of the substrate W while tilting radially outward and then flows radially outward from the substrate W. The substrate W is held non-contact with the spin chuck 51 according to Bernoulli's principle (Bernoulli chuck).

[0087] As part of the substrate processing in the processing unit 600, first, the thickness of a film made of organic material or the like formed on the upper surface of the substrate W may be measured. For measuring the film thickness, for example, an optical displacement sensor (not shown) may be used. During the film thickness measurement, the measurement is performed while rotating the substrate W, for example at 100 rpm, but the time required for film thickness measurement can be shortened by rotating the substrate W at, for example, 1200 rpm. Next, a chemical solution (for example, hydrofluoric acid (HF) and nitric acid (HNO3), which is a mixture of hydrofluoric acid and nitric acid, or a chemical solution further mixed with sulfuric acid and phosphoric acid) is supplied to the upper surface of the substrate W and a predetermined chemical solution treatment is performed (step ST01 in Figure 8).

[0088] Subsequently, a cleaning solution such as pure water (DIW) is supplied to the substrate W to perform a cleaning process (step ST02 in Figure 8).

[0089] Furthermore, the substrate W is rotated at high speed to shake off the cleaning solution, thereby drying the substrate W (step ST03 in Figure 8).

[0090] Of the above, the chemical treatment is performed by discharging the chemical solution onto the upper surface of the substrate W from the central nozzle 52 or other nozzles. The cleaning treatment is performed by discharging the cleaning solution onto the upper surface of the substrate W from the central nozzle 52 and the edge nozzles 60. However, in the cleaning treatment, only one of the central nozzle 52 or the edge nozzles 60 may be used.

[0091] <About the cleaning process> Next, the cleaning process, one of the substrate processing steps described above, will be explained. Figure 9 is a diagram illustrating the positional relationship between the edge nozzle 60 and the substrate W.

[0092] As shown in Figure 9, the edge nozzle 60 is positioned such that its radially inner end 60A overlaps the upper surface of the protrusion 12 of the substrate W in a plan view. Furthermore, the radially outer end 60B of the edge nozzle 60 is positioned outside the substrate W, not overlapping with it. The position of the edge nozzle 60 in the circumferential direction of the substrate W is not particularly limited.

[0093] In the example shown in Figure 9, the edge nozzle 60 is positioned such that its end 60A coincides with the radial center 12B, which is the radial center position of the protrusion 12 in a plan view. However, the end 60A of the edge nozzle 60 may be positioned so as to coincide with the radially inner end 12A of the protrusion 12. However, considering the variation in the discharge range of the cleaning liquid discharged from the edge nozzle 60, it is desirable that the end 60A of the edge nozzle 60 is located radially outward of the substrate W than the end 12A of the protrusion 12, while being radially inward of the substrate W than the radially outer end 12C of the protrusion 12.

[0094] By doing so, the discharge range of the cleaning liquid discharged from the edge nozzle 60 is limited to the upper surface of the protrusion 12 of the substrate W, and the step portion between the protrusion 12 and the main portion 13 (specifically, the step portion formed by the radially inner corner of the protrusion 12, the radially inner side of the protrusion 12, and the radially outer end of the main portion 13) is not included in the discharge range of the cleaning liquid. Therefore, splashing of the cleaning liquid discharged onto the substrate W at the above-mentioned step portion can be suppressed. As a result, contamination of the processing chamber 50 by spray of cleaning liquid caused by the splashing can be suppressed.

[0095] Figure 10 shows an example of cleaning liquid discharged from the edge nozzle 60. In Figure 10, cleaning liquid 70 is discharged from the edge nozzle 60, which is positioned as shown in Figure 9, toward the protrusion 12 of the substrate W.

[0096] The cleaning solution 70 is discharged from the edge nozzle 60 onto the protrusion 12 of the substrate W, with the discharge range limited to the radially outward side of the substrate W beyond the edge 12A. Therefore, splashing of the cleaning solution discharged onto the substrate W at the stepped portion can be suppressed.

[0097] Furthermore, since the cleaning solution 70 is also discharged to the outside of the substrate W that does not overlap with the substrate W, it absorbs components that splash radially outward from the substrate W, and can effectively reach and clean the underside of the substrate W. Here, as shown in Figure 10, if the adhesive 80 that bonds the substrate W and the protective plate 15 is corroded by chemical treatment or the like, the cleaning solution 70 that reaches the underside of the substrate W can clean the adhesive 80, including any foreign matter attached to it.

[0098] In the examples shown in Figures 9 and 10, the cleaning liquid 70 is discharged from the edge nozzle 60 in the negative Z-axis direction, but the cleaning liquid 70 may also be discharged at an angle with respect to the Z-axis direction, for example. In that case, the edge nozzle 60 does not necessarily need to be located above the protrusion 12 of the substrate W (in the positive Z-axis direction).

[0099] Furthermore, in the example shown in Figure 10, cleaning liquid 71 is also discharged from the central nozzle 52 (Figure 3), and the cleaning liquid 71 reaches the protrusion 12 (due to centrifugal force from the rotating substrate W, etc.). In this way, the cleaning liquid 71 flowing from the center of the substrate W toward the radially outward side of the substrate W reaches the protrusion 12, thereby absorbing any splashes that may occur at the step between the protrusion 12 and the main part 13, and effectively suppressing the spraying of cleaning liquid caused by such splashes.

[0100] The cleaning process is as follows: First, cleaning liquid 71 is discharged from the central nozzle 52 at a rate of, for example, 1500 ml / min onto the center of the upper surface of the substrate W, which is rotating at, for example, 200 rpm by the spin chuck 51. This allows the cleaning liquid 71 to flow radially outward by centrifugal force, cleaning the entire upper surface of the substrate W. Next, cleaning liquid 70 is discharged from the edge nozzle 60 at a rate of, for example, 500 ml / min onto the protrusions 12 of the substrate W to intensively clean any foreign matter adhering to the protrusions 12. At this time, by also discharging cleaning liquid 71 from the central nozzle 52 at a rate of, for example, 1500 ml / min, splashing of liquid that may occur at the step between the protrusions 12 and the main part 13 of the substrate W can be suppressed. Finally, by discharging cleaning liquid 71 again from the central nozzle 52, the entire substrate W, including any foreign matter remaining on the protrusions 12 after cleaning, can be cleaned.

[0101] Figure 11 is a diagram illustrating the positional relationship between the edge nozzle 60 and the substrate W.

[0102] As shown in Figure 11, the edge nozzle 60 is positioned such that its end portion 60A overlaps the upper surface of the protrusion 12 of the substrate W in a plan view. Furthermore, the radially outer end portion 60B of the edge nozzle 60 is positioned outside the substrate W, so as not to overlap with the substrate W.

[0103] In the example shown in Figure 11, the radially outer end 60B of the edge nozzle 60 is positioned radially outward from the position adjustment pins 113 and lift pins 116, which are located radially outward from the substrate W, so that the position adjustment pins 113 and lift pins 116 are included in the discharge range of the cleaning fluid. Here, the position adjustment pins 113 and lift pins 116 are edge pins that contact the edge 20 of the substrate W.

[0104] By doing so, the discharge range of the cleaning liquid discharged from the edge nozzle 60 is limited to the upper surface of the protrusion 12 on the substrate W, and the stepped portion between the protrusion 12 and the main portion 13 is not included in the discharge range of the cleaning liquid. Therefore, splashing of the cleaning liquid discharged onto the substrate W at the stepped portion can be suppressed.

[0105] Furthermore, the cleaning fluid discharged from the edge nozzle 60 can also be used to clean the position adjustment pins 113 and lift pins 116 located on the radially outer side of the substrate W.

[0106] Figure 12 shows an example of cleaning liquid discharged from the edge nozzle 60. In Figure 12, cleaning liquid 70 is discharged from the edge nozzle 60, which is positioned as shown in Figure 11, toward the protrusion 12 of the substrate W.

[0107] The cleaning solution 70 is discharged from the edge nozzle 60 onto the protrusion 12 of the substrate W, with the discharge range limited to the radially outer side of the substrate W beyond the edge 12A. Furthermore, the cleaning solution 70 is also discharged into the area including the position adjustment pins 113 and lift pins 116 on the outer side of the substrate W that do not overlap with the substrate W. Therefore, it is possible to clean the underside of the substrate W, the position adjustment pins 113, and the lift pins 116 together while absorbing any splashes of liquid on the radially outer side of the substrate W. As shown in Figure 12, it is also possible to clean the fixing pins 103 that support the substrate W.

[0108] In the example shown in Figure 12, the cleaning liquid 71 is also discharged from the central nozzle 52 (Figure 3), and the cleaning liquid 71 reaches the protrusion 12. In this way, the cleaning liquid 71 flowing from the center of the substrate W toward the radially outward side of the substrate W reaches the protrusion 12, and the liquid splash that may occur at the step between the protrusion 12 and the main part 13 is absorbed by the radially outward flow velocity, thereby effectively suppressing the spraying of the cleaning liquid caused by such splashing.

[0109] <Regarding the effects produced by the embodiments described above> Next, examples of the effects produced by the embodiments described above will be shown. In the following description, the effects will be described based on the specific configurations illustrated in the embodiments described above, but they may be replaced with other specific configurations illustrated in this specification to the extent that similar effects are produced. That is, for convenience, in the following, only one of the corresponding specific configurations may be described as representative, but the specific configuration described as representative may be replaced with another corresponding specific configuration.

[0110] According to the embodiment described above, the substrate cleaning apparatus comprises a holding unit and a cleaning nozzle. Here, the holding unit corresponds to, for example, a spin chuck 10 having a plate 101. The cleaning nozzle corresponds to, for example, an edge nozzle 60. A protrusion 12 is formed on at least a part of the edge of the upper surface of the substrate W. The plate 101 holds the substrate W. The edge nozzle 60 discharges cleaning liquid 70 toward the protrusion 12 of the substrate W. Here, the first cleaning liquid corresponds to, for example, cleaning liquid 70. The cleaning liquid 70 is discharged in a range where the radially inner end 60A of the substrate W is located on the upper surface of the protrusion 12, and the radially outer end 60B of the substrate W is located outside the substrate W and does not overlap with the substrate W in a plan view.

[0111] With this configuration, the discharge range of the cleaning liquid 70 discharged from the edge nozzle 60 is limited to the upper surface of the protrusion 12 of the substrate W, so that the step portion between the protrusion 12 and the main portion 13 is not included in the discharge range of the cleaning liquid 70. Therefore, splashing of the cleaning liquid discharged onto the substrate W at the aforementioned step portion can be suppressed. As a result, contamination of the processing chamber 50 by spray of cleaning liquid caused by the splashing can be suppressed. In addition, since the discharge range of the cleaning liquid 70 extends to the outside of the substrate W that does not overlap with the substrate W, components that splash radially outward from the substrate W can also be absorbed, and the cleaning can effectively reach and clean the underside of the substrate W.

[0112] Furthermore, the same effect can be achieved even if other configurations exemplified in this specification are appropriately added to the above configuration, that is, if other configurations in this specification that are not mentioned as the above configuration are appropriately added.

[0113] Furthermore, according to the embodiment described above, the substrate cleaning apparatus is equipped with a central nozzle 52 that discharges a second cleaning liquid to the center of the substrate W held on the plate 101 in a plan view. Here, the second cleaning liquid corresponds to, for example, cleaning liquid 71. The cleaning liquid 71 discharged to the center of the substrate W reaches the protrusion 12 at the edge of the substrate W. With this configuration, the cleaning liquid 71 flowing radially outward from the center of the substrate W reaches the protrusion 12, thereby absorbing any splashing that may occur at the step between the protrusion 12 and the main part 13 with a radially outward flow velocity, and effectively suppressing the spraying of cleaning liquid caused by such splashing.

[0114] Furthermore, according to the embodiment described above, the substrate cleaning apparatus includes a rotating part for rotating the plate 101. Here, the rotating part corresponds to, for example, a rotary drive unit 193. The cleaning liquid 71 discharged onto the substrate W flows from the center of the rotating substrate W and reaches the protrusions 12. With this configuration, the cleaning liquid 71 discharged from the central nozzle 52 smoothly reaches the protrusions 12 of the substrate W due to the centrifugal force generated by the rotation of the substrate W. In addition, the above centrifugal force can also suppress the flow of the cleaning liquid 70 discharged from the edge nozzle 60 radially inward of the substrate W.

[0115] Furthermore, according to the embodiments described above, the substrate cleaning apparatus includes edge pins that contact the edge 20 of the substrate W. Here, the edge pins correspond to at least one of, for example, position adjustment pins 113 and lift pins 116. The cleaning liquid 70 is then discharged into the area including the edge pins. With this configuration, the cleaning liquid discharged from the edge nozzle 60 can clean both the position adjustment pins 113 and the lift pins 116, which are located radially outward of the substrate W.

[0116] Furthermore, according to the embodiment described above, the plate 101 holds the substrate W with a Bernoulli chuck. With this configuration, nitrogen gas or the like flows on the underside of the substrate W, which may prevent the cleaning liquid from reaching the underside of the substrate W. However, by concentrating the discharge of the cleaning liquid 70 from the edge nozzle 60 toward the protrusions 12 of the substrate W, the protrusions 12 and the underside of the substrate W can be effectively cleaned.

[0117] Furthermore, according to the embodiments described above, the substrate cleaning apparatus includes a hydrophilic glass plate that is bonded to the lower surface of the substrate W with an adhesive. Here, the glass plate corresponds to, for example, a protective plate 15. With this configuration, because the protective plate 15 bonded to the lower surface of the substrate W is hydrophilic, a cleaning solution such as pure water can easily flow to the lower surface of the substrate W. Therefore, cleaning on the lower surface of the substrate W can be promoted.

[0118] According to the embodiment described above, the substrate cleaning method comprises the steps of holding the substrate W and discharging a cleaning liquid 70 toward the protrusions 12 of the substrate W. The cleaning liquid 70 is discharged in a range where the radially inner end of the substrate W is located on the upper surface of the protrusions 12, and the radially outer end of the substrate W is located outside the substrate W and does not overlap with the substrate W in a plan view.

[0119] With this configuration, the discharge range of the cleaning liquid 70 discharged from the edge nozzle 60 is limited to the upper surface of the protrusion 12 of the substrate W, so that the step portion between the protrusion 12 and the main portion 13 is not included in the discharge range of the cleaning liquid 70. Therefore, splashing of the cleaning liquid discharged onto the substrate W at the aforementioned step portion can be suppressed. As a result, contamination of the processing chamber 50 by spray of cleaning liquid caused by the splashing can be suppressed. In addition, since the discharge range of the cleaning liquid 70 extends to the outside of the substrate W that does not overlap with the substrate W, components that splash radially outward from the substrate W can also be absorbed, and the cleaning can effectively reach and clean the underside of the substrate W.

[0120] Unless otherwise specified, the order in which each process is performed can be changed.

[0121] Furthermore, the same effect can be achieved even if other configurations exemplified in this specification are appropriately added to the above configuration, that is, if other configurations in this specification that are not mentioned as above configurations are appropriately added.

[0122] <Modifications of the embodiments described above> In the embodiments described above, the material, dimensions, shape, relative arrangement, or implementation conditions of each component may also be described, but these are merely examples and not limiting in all aspects.

[0123] Therefore, countless variations and equivalents not shown are envisioned within the scope of the art disclosed in this specification. For example, these include modifications, additions, or omissions of at least one component.

[0124] Furthermore, in at least one embodiment described above, if a material name or the like is mentioned without further specification, it is assumed that the material includes other additives, such as an alloy, unless otherwise specified, to avoid any inconsistencies. [Explanation of symbols]

[0125] 12 Convex part 12A end 12C end 16 Bottom side 17 Top side 20 Edge 52 Central Nozzle 60A end 60B end 70 Cleaning solution 71 Cleaning solution 80 Adhesives 102 Top surface W board

Claims

1. This is a circuit board cleaning device for cleaning circuit boards. A protrusion is formed on at least a part of the edge of the upper surface of the substrate, The aforementioned substrate cleaning apparatus A holding portion for holding the substrate, A cleaning nozzle for discharging a first cleaning liquid toward the protrusion of the substrate held in the holding part, The holding portion is equipped with a central nozzle that discharges a second cleaning liquid from the center of the substrate in a plan view, The first cleaning solution is discharged to an area where the radially inner end of the substrate is located on the upper surface of the protrusion, and the radially outer end of the substrate is located outside the substrate and does not overlap with the substrate in a plan view. The second cleaning liquid discharged to the central part of the substrate reaches the protrusions on the edges of the substrate. The first cleaning solution and the second cleaning solution are liquids of the same type. The second cleaning solution is discharged from the central nozzle to clean the entire upper surface of the substrate, and then, while the second cleaning solution is discharged from the central nozzle, the first cleaning solution is discharged from the cleaning nozzle to clean the protrusions. Circuit board cleaning device.

2. A substrate cleaning apparatus according to Claim 1, The amount of the first cleaning solution discharged from the cleaning nozzle is less than the amount of the second cleaning solution discharged from the central nozzle. Circuit board cleaning device.

3. The substrate cleaning apparatus according to claim 2, The holding part is further provided with a rotating part for rotating the holding part, The second cleaning liquid discharged onto the substrate flows from the central part of the rotating substrate and reaches the protrusion. Circuit board cleaning device.

4. A substrate cleaning apparatus according to any one of claims 1 to 3, The substrate further comprises edge pins that contact the edge of the substrate, The first cleaning solution is discharged into the area including the edge pin. Circuit board cleaning device.

5. A substrate cleaning apparatus according to any one of claims 1 to 3, The holding part holds the substrate with a Bernoulli chuck. Circuit board cleaning device.

6. A substrate cleaning apparatus according to any one of claims 1 to 3, The substrate further comprises a hydrophilic glass plate bonded to its lower surface with an adhesive. Circuit board cleaning device.

7. This is a circuit board cleaning method for cleaning circuit boards. A protrusion is formed on at least a part of the edge of the upper surface of the substrate, The step of holding the substrate, A first step involves discharging a first cleaning solution toward the protrusions of the held substrate, The process includes a second step of discharging a second cleaning solution toward the center of the held substrate, The first cleaning solution is discharged to an area where the radially inner end of the substrate is located on the upper surface of the protrusion, and the radially outer end of the substrate is located outside the substrate and does not overlap with the substrate in a plan view. The second cleaning liquid discharged to the center of the substrate reaches the protrusions on the edges of the substrate. The first cleaning solution and the second cleaning solution are liquids of the same type. The second step involves discharging the second cleaning solution to clean the entire upper surface of the substrate, and then, while discharging the second cleaning solution in the second step, the first step involves discharging the first cleaning solution to clean the protrusions. Circuit board cleaning method.

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