Light-emitting device

Abstract

To provide a light-emitting device with which it is possible to improve the efficiency of extracting light toward the front direction.SOLUTION: The light-emitting device comprises: a translucent member having a first plane, a second plane located on the side opposite the first plane, and a first side plane; a first semiconductor structure having a third plane facing the first plane, a fourth plane located on the side opposite the third plane, and a second side plane; a second semiconductor structure having a fifth plane facing the second plane, a sixth plane, and a third side plane; a light reflective member covering the first side plane of the translucent member and the second side plane of the first semiconductor structure; a first electrode located on the fourth plane side of the first semiconductor structure and electrically connected to the first semiconductor structure; a second electrode located on the sixth plane side of the second semiconductor structure and electrically connected to the second semiconductor structure; and a first wiring part located on the top face of the light reflective member and electrically connected to the second electrode.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] This disclosure relates to a light-emitting device. [Background technology]

[0002] For example, Patent Document 1 discloses an LED device having a configuration in which one phosphor layer is placed between two LED dies. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2013-098427 [Overview of the project] [Problems that the invention aims to solve]

[0004] The embodiments relating to this disclosure aim to provide a light-emitting device that can improve the efficiency of light extraction in the forward direction. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, the light-emitting device includes: a light-transmitting member having a first surface, a second surface located opposite to the first surface in a first direction, and a first side surface connecting the first surface and the second surface; a first semiconductor structure having a third surface facing the first surface, a fourth surface located opposite to the third surface in a first direction, and a second side surface connecting the third surface and the fourth surface; a second semiconductor structure having a fifth surface facing the second surface, a sixth surface located opposite to the fifth surface in a first direction, and a third side surface connecting the fifth surface and the sixth surface; a light-reflective member covering the first side surface of the light-transmitting member and the second side surface of the first semiconductor structure; a first electrode disposed on the fourth surface side of the first semiconductor structure and electrically connected to the first semiconductor structure; a second electrode disposed on the sixth surface side of the second semiconductor structure and electrically connected to the second semiconductor structure; and a first wiring portion disposed on the upper surface of the light-reflective member and electrically connected to the second electrode. [Effects of the Invention]

[0006] According to the embodiments of this disclosure, it is possible to provide a light-emitting device that can improve the efficiency of light extraction in the forward direction. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic cross-sectional view of the light-emitting device of the embodiment. [Figure 2] This is a schematic top view of the light-emitting section of the embodiment. [Figure 3] Figure 2 is a schematic cross-sectional view of the light-emitting section along line III-III. [Figure 4A] This is a schematic cross-sectional view of the first light-emitting element of the embodiment. [Figure 4B] This is a schematic cross-sectional view of the second light-emitting element of the embodiment. [Figure 5] This is a schematic cross-sectional view of the light-emitting part according to a first modified embodiment. [Figure 6] This is a schematic cross-sectional view of a part of the light-emitting section according to a second modified embodiment. [Modes for carrying out the invention]

[0008] The light-emitting device of the embodiment will be described below with reference to the drawings. Unless otherwise specified, the dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiment are not intended to be the sole limiting factors, but are merely illustrative examples. The size and positional relationships of the components shown in each drawing may be exaggerated for clarity of explanation. In addition, in the following description, the same name and reference numeral indicate the same or identical components, and detailed explanations will be omitted as appropriate. In addition, in some cases, end view diagrams showing only the cut surface will be shown as cross-sectional views.

[0009] In the following description, terms indicating specific directions or positions (e.g., "up," "down," and other terms including these terms) may be used. However, these terms are used only for clarity to indicate the relative directions or positions in the referenced drawings. If the relative direction or position relationship indicated by terms such as "up" and "down" in the referenced drawings is the same, the arrangement in drawings other than those disclosed, actual products, etc., does not have to be the same as in the referenced drawings. In this specification, the positional relationship expressed as "up (or down)" includes, for example, the case where two members are touching, and the case where the two members are not touching but one member is located above (or below) the other member. Also, in this specification, "parallel" includes not only the case where two lines, edges, planes, etc. do not intersect even when extended, but also the case where the angles formed by two lines, edges, planes, etc. intersect within a range of 10° or less. Furthermore, in this specification, the term "covering the object to be covered" includes cases where the member directly covers the object by being in contact with it, and cases where the member indirectly covers the object without contacting it.

[0010] In the figures shown below, the directions may be indicated by the X-axis, Y-axis, and Z-axis. The X-axis, Y-axis, and Z-axis are perpendicular to each other. For example, in this specification, the direction along the Z-axis is the first direction Z, the direction along the X-axis is the second direction X, and the direction along the Y-axis is the third direction Y. The light-emitting surface of the light-emitting device according to the embodiment is parallel to the XY plane, and the Z-axis is perpendicular to the light-emitting surface of the light-emitting device. Also, the plus direction of the Z-axis is relatively upward, and the minus direction is relatively downward. Further, in this specification, the front direction of the light-emitting device represents the plus direction of the Z-axis. Also, in this specification, the surface direction represents a direction parallel to the XY plane.

[0011] FIG. 1 is a schematic cross-sectional view of the light-emitting device 1 according to the embodiment. As shown in FIG. 1, the light-emitting device 1 according to the embodiment includes a light-emitting unit 101. FIG. 2 is a schematic top view of the light-emitting unit 101, and FIG. 3 is a schematic cross-sectional view of the light-emitting unit 101 taken along line III-III in FIG. 2.

[0012] The light-emitting unit 101 includes a translucent member 30, a first light-emitting element 10, a second light-emitting element 20, a light-reflective member 60, and a first wiring portion 71.

[0013] <Translucent member> As shown in FIG. 3, the translucent member 30 has a first surface 30a, a second surface 30b located on the opposite side of the first surface 30a in the first direction Z, and a first side surface 30c connecting the first surface 30a and the second surface 30b. The shape of the translucent member 30 in a top view is not particularly limited. The shape of the translucent member 30 in a top view can be, for example, a rectangular shape such as a square or a rectangle. In the example shown in FIG. 2, the translucent member 30 has a square shape. The first side surface 30c of the translucent member 30 may be perpendicular to the second direction X or may be inclined. The translucent member 30 supports the first light-emitting element 10 and the second light-emitting element 20. The translucent member 30 is located between the first light-emitting element 10 and the second light-emitting element 20 in the first direction Z.

[0014] The light-transmissive member 30 has high light transmittance with respect to the light emitted by the first light-emitting element 10 and the light emitted by the second light-emitting element 20. Having high light transmittance of the light-transmissive member 30 means having a light transmittance of 50% or more, preferably 60% or more, and more preferably 80% or more with respect to the emission peak wavelength of the light emitted by the light-emitting element. As the light-transmissive member 30, for example, a light-transmissive resin, glass, ceramics, etc. can be used. As the material of the light-transmissive resin, a resin containing one or more of a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, an acrylic resin, and a fluororesin can be used.

[0015] In addition, the light-transmissive member 30 can contain a phosphor capable of wavelength-converting at least a part of the incident light. As the phosphor, yttrium aluminum garnet-based phosphors (for example, (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet-based phosphors (for example, Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet-based phosphors (for example, Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (for example, Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (for example, Sr4Al 14 O 25 :Eu), chlorosilicate-based phosphors (for example, Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphors (for example, (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphors (for example, (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphors (for example, Ca(Si,Al) 12 (O,N) 16 :Eu), etc., oxynitride-based phosphors, LSN-based phosphors (for example, (La,Y)3Si6N 11:Ce), BSESN-based phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphors (e.g., SrLiAl3N4:Eu), CASN-based phosphors (e.g., CaAlSiN3:Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu), etc., nitride-based phosphors, KSF-based phosphors (e.g., K2SiF6:Mn), KSAF-based phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn where x satisfies 0 < x < 1.) or fluoride-based phosphors such as MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2), etc. can be used. The light-transmissive member 30 may contain a single type of phosphor or a plurality of types of phosphors.

[0016] As the light-transmissive member 30 containing a phosphor, a phosphor-containing layer such as a resin layer containing a phosphor may be disposed on the surface of a light-transmissive layer which is a molded body such as a light-transmissive resin, glass, ceramics, etc. Also, a sintered body of a phosphor, or a light-transmissive resin, glass, ceramics, etc. containing phosphor powder may be used. The light-transmissive member 30 containing a phosphor may use, for example, a sintered body of a phosphor and a light-transmissive material such as aluminum oxide. A substantially phosphor-only body formed by sintering phosphor powder without using a light-transmissive material may also be used. The light-transmissive member 30 containing a phosphor is preferably a sintered body of yttrium aluminum garnet.

[0017] <First light-emitting element> As shown in Figure 4A, the first light-emitting element 10 has a first semiconductor structure 11. The first semiconductor structure 11 has a third surface 11a, a fourth surface 11b located opposite the third surface 11a in the first direction Z, and a second side surface 11c connecting the third surface 11a and the fourth surface 11b. The first semiconductor structure 11 is placed on a second translucent substrate 42. As shown in Figure 3, the third surface 11a faces the first surface 30a of the translucent member 30. In the example shown in Figure 3, the third surface 11a faces the first surface 30a of the translucent member 30 via the second translucent substrate 42. In the second direction X, the external dimensions of the second translucent substrate 42 are the same as or smaller than the external dimensions of the translucent member 30. In the first direction Z, the second side surface 11c of the first semiconductor structure 11 may be located on the same plane as the first side surface 30c of the light-transmitting member 30. In the first semiconductor structure 11, the third surface 11a functions as the main light extraction surface.

[0018] The second translucent substrate 42 can be, for example, a sapphire substrate. The thickness of the second translucent substrate 42 in the first direction Z is thinner than the thickness of the translucent member 30 in the first direction Z. The thickness of the translucent member 30 in the first direction Z is 100 μm or more and 200 μm or less. The thickness of the second translucent substrate 42 in the first direction Z is 10 μm or more and 50 μm or less. For example, the thickness of the translucent member 30 in the first direction Z is 180 μm, and the thickness of the second translucent substrate 42 in the first direction Z is 30 μm.

[0019] The second translucent substrate 42 and the translucent member 30 are directly bonded. For direct bonding, for example, a surface activation bonding method can be used. For example, if the second translucent substrate 42 is a sapphire substrate and the translucent member 30 is made of a material containing aluminum oxide, the bonding between the second translucent substrate 42 and the translucent member 30 is substantially a bonding between homogeneous materials, and the bonding strength between the second translucent substrate 42 and the translucent member 30 can be increased. Alternatively, the third surface 11a of the first semiconductor structure 11 and the first surface 30a of the translucent member 30 may be bonded without the second translucent substrate 42. In this case, the height of the light-emitting portion 101 in the first direction Z can be reduced compared to when the second translucent substrate 42 is used.

[0020] As shown in Figure 4A, the first semiconductor structure 11 has a first n-side layer 12, a first p-side layer 14, and a first active layer 13 located between the first n-side layer 12 and the first p-side layer 14 in the first direction Z. The third surface 11a is the upper surface of the first n-side layer 12. The fourth surface 11b has a first region 11b1, a second region 11b2, and a third region 11b3. The first region 11b1 is the lower surface of the first p-side layer 14. The second region 11b2 and the third region 11b3 are the lower surfaces of the first n-side layer 12 exposed from the first active layer 13 and the first p-side layer 14. The third region 11b3 is located on the outer periphery of the first semiconductor structure 11 in a top view. Since the thickness of the first active layer 13 is thinner than that of the first n-side layer 12 and the first p-side layer 14, the first active layer 13 is represented by a line in each figure.

[0021] The first light-emitting element 10 further has a first electrode 51. The first electrode 51 is positioned on the fourth surface 11b side of the first semiconductor structure 11 and is electrically connected to the first semiconductor structure 11. Current is supplied to the first semiconductor structure 11 through the first electrode 51. The first electrode 51 has a first n-side electrode 51n that is electrically connected to the first n-side layer 12 and a first p-side electrode 51p that is electrically connected to the first p-side layer 14.

[0022] As shown in Figure 4A, the first n-side electrode 51n and the first p-side electrode 51p are positioned closer to the center of the second translucent substrate 42 than to the outer edge of the second translucent substrate 42. As shown in Figure 2, in a top view, it is preferable that the second n-side electrode 52n and the second p-side electrode 52p are located outside the outer edge 13a of the first active layer 13 of the first semiconductor structure 11. This makes it less likely for light from the first active layer 13 to be blocked by the second n-side electrode 52n and the second p-side electrode 52p, thereby improving the efficiency of light extraction in the forward direction.

[0023] For example, copper, gold, or nickel can be used as the material for the first electrode 51. The first electrode 51 may be a single layer of the above-mentioned metal material, or it may be a laminated structure having multiple metal layers.

[0024] For example, the first n-side electrode 51n is electrically connected to the first n-side layer 12 via the first n-side wiring layer 19. The first n-side wiring layer 19 is electrically connected to the first n-side layer 12 in the second region 11b2. The first n-side wiring layer 19 may also be electrically connected to the first n-side layer 12 in the third region 11b3. The first n-side electrode 51n is in contact with the first n-side wiring layer 19 below the first region 11b1.

[0025] As the material for the first n-side wiring layer 19, for example, silver, aluminum, nickel, rhodium, gold, copper, titanium, platinum, palladium, molybdenum, chromium, tungsten, or alloys mainly composed of these metals can be suitably used. Furthermore, the first n-side wiring layer 19 may be a single layer of the above metal material or a laminated structure having multiple metal layers.

[0026] For example, the first p-side electrode 51p is electrically connected to the first p-side layer 14 via the first p-side wiring layer 18 and the light-reflective conductive layer 15. The light-reflective conductive layer 15 is located on the lower surface of the first p-side layer 14 in the first region 11b1 and is electrically connected to the first p-side layer 14. The first p-side wiring layer 18 is located between the light-reflective conductive layer 15 and the first p-side electrode 51p in the first direction Z and is in contact with the light-reflective conductive layer 15 and the first p-side electrode 51p. The first p-side electrode 51p is in contact with the first p-side wiring layer 18 below the first region 11b1.

[0027] The light-reflective conductive layer 15 has high reflectivity to light emitted by the first light-emitting element 10 and the second light-emitting element 20. Here, the light-reflective conductive layer 15 is said to have high reflectivity if it has a reflectance of 50% or more, preferably 60% or more, with respect to the emission peak wavelength of the light emitted by the light-emitting element. The light-reflective conductive layer 15 can be, for example, a metal layer containing silver or aluminum. The first p-side wiring layer 18 can be, for example, made of the same material as the first n-side wiring layer 19.

[0028] The first insulating film 17 is disposed, for example, in the first direction Z, between the fourth surface 11b of the first semiconductor structure 11 and the first p-side wiring layer 18, between the fourth surface 11b of the first semiconductor structure 11 and the first n-side wiring layer 19, between the light-reflective conductive layer 15 and the first p-side wiring layer 18, and between the light-reflective conductive layer 15 and the first n-side wiring layer 19. In the second direction X, the first insulating film 17 is disposed between the first p-side wiring layer 18 and the first n-side wiring layer 19, and between the light-reflective conductive layer 15 and the first n-side wiring layer 19. As the first insulating film 17, for example, a silicon oxide film or a silicon nitride film can be used. The first insulating film 17 may be a single layer film or a laminated film having multiple insulating films.

[0029] Furthermore, a protective resin 91 covering the first p-side wiring layer 18 and the first n-side wiring layer 19 is arranged on the fourth surface 11b side. Preferably, the protective resin 91 has high reflectivity with respect to the emission peak wavelength of light emitted by the first active layer 13. Here, the protective resin 91 having high reflectivity means having a reflectance of 50% or more, preferably 60% or more, with respect to the emission peak wavelength of light emitted by the light-emitting element. The lower surfaces of the first p-side electrode 51p and the first n-side electrode 51n are exposed from the protective resin 91. The protective resin 91 may be a single layer or a laminated structure. For example, the protective resin 91 can be a dielectric multilayer film, a silicon oxide film, or a silicon nitride film. For example, a distributed Bragg reflector (DBR) can be used as the dielectric multilayer film. Specifically, it is a film in which two or more dielectric films with different refractive indices are alternately laminated with a thickness of wavelength / 4n (where n is the refractive index), and can reflect light of a predetermined wavelength with high efficiency. Examples of dielectric films include silicon oxide, niobium oxide, aluminum oxide, titanium oxide, zirconium oxide, and tantalum oxide. A dielectric multilayer film may consist of alternating layers of silicon oxide and niobium oxide. For example, the reflectance and / or transmittance can be controlled by varying the film thickness and materials of the low-refractive-index and high-refractive-index layers.

[0030] <Second light-emitting element> As shown in Figure 4B, the second light-emitting element 20 has a second semiconductor structure 21. The second semiconductor structure 21 has a fifth surface 21a, a sixth surface 21b located opposite the fifth surface 21a in the first direction Z, and a third side surface 21c connecting the fifth surface 21a and the sixth surface 21b. As shown in Figure 3, the fifth surface 21a faces the second surface 30b of the light-transmitting member 30. The second semiconductor structure 21 is arranged on the first light-transmitting substrate 41. In the example shown in Figure 3, the fifth surface 21a faces the second surface 30b of the light-transmitting member 30 via the first light-transmitting substrate 41. In the second direction X, the external dimensions of the first light-transmitting substrate 41 are the same as or smaller than the external dimensions of the light-transmitting member 30. In the first direction Z, the third side surface 21c of the second light-emitting element 20 may be located on the same plane as the first side surface 30c of the light-transmitting member 30. From the viewpoint of ease of arranging the light-reflecting member described later, it is preferable that the outer shape of the first light-transmitting substrate 41 and the outer shape of the light-transmitting member 30 are the same size. Furthermore, it is even more preferable that the outer shapes of the first light-transmitting substrate 41, the light-transmitting member 30, and the second light-transmitting substrate 42 are the same size. In the second semiconductor structure 21, the sixth surface 21b functions as the main light extraction surface.

[0031] Furthermore, for example, the first translucent substrate 41 can be a sapphire substrate. The thickness of the first translucent substrate 41 in the first direction Z is thinner than the thickness of the translucent member 30 in the first direction Z. The thickness of the first translucent substrate 41 in the first direction Z is 10 μm or more and 50 μm or less. For example, the thickness of the first translucent substrate 41 in the first direction Z is 30 μm.

[0032] The first translucent substrate 41 and the translucent member 30 are directly joined. For example, if the first translucent substrate 41 is a sapphire substrate and the translucent member 30 is made of a material containing aluminum oxide, the joining of the first translucent substrate 41 and the translucent member 30 is substantially the joining of homogeneous materials, and the bonding strength between the first translucent substrate 41 and the translucent member 30 can be increased. Alternatively, the fifth surface 21a of the second semiconductor structure 21 and the second surface 30b of the translucent member 30 may be joined without the first translucent substrate 41 in between. In this case, the height of the light-emitting portion 101 in the first direction Z can be reduced.

[0033] As shown in Figure 4B, the second semiconductor structure 21 has a second n-side layer 22, a second p-side layer 24, and a second active layer 23 located between the second n-side layer 22 and the second p-side layer 24 in the first direction Z. The fifth surface 21a is the bottom surface of the second n-side layer 22. The sixth surface 21b has a fourth region 21b1 and a fifth region 21b2. The fourth region 21b1 is the top surface of the second p-side layer 24. The fifth region 21b2 is the top surface of the second n-side layer 22 exposed from the second active layer 23 and the second p-side layer 24. Since the thickness of the second active layer 23 is thinner than the thickness of the second n-side layer 22 and the second p-side layer 24, the second active layer 23 is represented by a line in each figure, similar to the first active layer 13.

[0034] The second light-emitting element 20 further comprises a second electrode 52. The second electrode 52 is positioned on the sixth surface 21b side of the second semiconductor structure 21 and is electrically connected to the second semiconductor structure 21. The second electrode 52 has a second n-side electrode 52n electrically connected to the second n-side layer 22 and a second p-side electrode 52p electrically connected to the second p-side layer 24. The second n-side electrode 52n is electrically connected to the second n-side layer 22 in the fifth region 21b2.

[0035] As shown in Figure 4B, the second n-side electrode 52n and the second p-side electrode 52p are positioned closer to the outer edge of the first translucent substrate 41 than to the center of the first translucent substrate 41. As shown in Figure 2, it is preferable that the first electrode 51 of the first light-emitting element 10 and the second electrode 52 of the second light-emitting element 20 do not overlap in a top view. This makes it less likely for light from the region where the first electrode 51, which tends to emit strong light, is located in the first semiconductor structure 11 to be blocked by the second electrode 52, thereby improving the efficiency of light extraction in the front direction.

[0036] For example, the same material as the first electrode 51 can be used as the material for the second electrode 52.

[0037] The second light-emitting element 20 further has a translucent conductive layer 25 disposed on the second p-side layer 24. The translucent conductive layer 25 is in contact with the second p-side layer 24 in the fourth region 21b1. The second p-side electrode 52p is in contact with a portion 25a of the translucent conductive layer 25. Therefore, the second p-side electrode 52p is electrically connected to the second p-side layer 24 via the translucent conductive layer 25.

[0038] The translucent conductive layer 25 has the function of current diffusion, which spreads the current supplied through the second p-side electrode 52p in the planar direction of the second semiconductor structure 21. The translucent conductive layer 25 is translucent to light from the first light-emitting element 10 and light from the second light-emitting element 20.

[0039] The translucent conductive layer 25 is preferably formed from a conductive metal oxide. As the material for the translucent conductive layer 25, for example, an oxide containing at least one element selected from the group consisting of zinc, indium, tin, gallium, and titanium can be used. For example, the translucent conductive layer 25 can be made of indium tin oxide or zinc oxide. Indium tin oxide and zinc oxide are materials that have high translucency to visible light and high conductivity, making them suitable materials for covering substantially the entire upper surface of the second p-side layer 24.

[0040] A second insulating film 26 is placed between a portion 25a of the translucent conductive layer 25, which is in contact with the second p-side electrode 52p, and the upper surface of the second p-side layer 24, so that the portion 25a of the translucent conductive layer 25 is not in contact with the upper surface of the second p-side layer 24. As a result, current is less likely to flow in the region below the second p-side electrode 52p, and the second active layer 23 is less likely to emit light in the region below the second p-side electrode 52p, thereby reducing light absorption by the second p-side electrode 52p. Therefore, the light extraction efficiency of the light-emitting device 1 can be improved. As the second insulating film 26, for example, a silicon oxide film or a silicon nitride film can be used.

[0041] The upper surface of the translucent conductive layer 25 and the sixth surface 21b of the second semiconductor structure 21 are covered with a protective film 27. For example, a silicon oxide film or a silicon nitride film can be used as the protective film 27.

[0042] The first semiconductor structure 11 and the second semiconductor structure 21 are made of nitride semiconductors. In this specification, "nitride semiconductor" means, for example, In x Al y Ga 1-x-y This term includes semiconductors with all compositions obtained by varying the composition ratios x and y within the respective ranges in the chemical formula N(0≦x≦1,0≦y≦1,x+y≦1). Furthermore, "nitride semiconductors" also include those that further contain group V elements other than N (nitrogen) in the above chemical formula, and those that further contain various elements added to control various physical properties such as conductivity.

[0043] The first active layer 13 and the second active layer 23 are light-emitting layers. The first active layer 13 and the second active layer 23 have an MQW (Multiple Quantum Well) structure, for example, including multiple barrier layers and multiple well layers. The emission peak wavelength of the first active layer 13 and the emission peak wavelength of the second active layer 23 may be the same or different. The first n-side layer 12 and the second n-side layer 22 have semiconductor layers containing n-type impurities. The first p-side layer 14 and the second p-side layer 24 have semiconductor layers containing p-type impurities.

[0044] <Light-reflective material> The light-reflective member 60 covers at least the first side surface 30c of the light-transmitting member 30 and the second side surface 11c of the first semiconductor structure 11. This allows the light-reflective member 60 to reflect light directed toward the first side surface 30c and the second side surface 11c, thereby improving the efficiency of light extraction in the forward direction. Furthermore, if the light-transmitting member 30 contains a phosphor, the light-reflective member 60 can reduce color unevenness by reflecting light directed toward the periphery of the light-transmitting member 30 (in cross-sectional view, the first side surface 30c of the light-transmitting member 30) in the forward direction. If the first side surface 30c is not covered by the light-reflective member 60, light whose wavelength has been converted by the phosphor is more likely to be emitted from the first side surface 30c, and color unevenness is likely to occur around the light-transmitting member 30. By covering the first side surface 30c with the light-reflective member 60, light whose wavelength has been converted in the forward direction is reflected, thereby reducing color unevenness. The light-reflective member 60 directly or indirectly covers the first side surface 30c of the light-transmitting member 30. The light-reflective member 60 directly or indirectly covers the second side surface 11c of the first semiconductor structure 11. For example, a portion of the protective resin 91 may be located on the second side surface 11c of the first semiconductor structure 11, and the light-reflective member 60 may indirectly cover the second side surface 11c via the protective resin 91. Alternatively, instead of the protective resin 91, the light-reflective member 60 may be placed on the fourth side 11b of the first semiconductor structure 11. Furthermore, the light-reflective member 60 covers the side surface of the second light-transmitting substrate 42. This allows the light-reflective member 60 to reflect light directed toward the periphery of the second light-transmitting substrate 42 (the side surface of the second light-transmitting substrate 42 in a cross-sectional view), thereby further improving the efficiency of light extraction in the forward direction.

[0045] The light-reflective member 60 has high reflectivity to the light emitted by the first light-emitting element 10 and the second light-emitting element 20. High reflectivity of the light-reflective member 60 means that it has a reflectance of 60% or more with respect to the emission peak wavelength of the light emitted by the light-emitting elements, and more preferably 70% or more, and more preferably 80% or more. Furthermore, if the light-transmitting member 30 contains a phosphor, the light-reflective member 60 has reflectivity to the light emitted by the phosphor.

[0046] As shown in Figure 2, in a top view, the outer edges 60A to 60D of the light-reflecting member 60 constitute the outer edge of the light-emitting part 101. In a top view, the light-reflecting member 60 has a first outer edge 60A extending in a second direction X, a second outer edge 60B located away from the first outer edge 60A in a third direction Y and extending in the second direction X, a third outer edge 60C extending in the third direction Y, and a fourth outer edge 60D located away from the third outer edge 60C in a second direction X and extending in the third direction Y.

[0047] In a top view, as shown in Figure 2, the light-reflective member 60 is positioned in contact with the second semiconductor structure 21. In a top view, the second semiconductor structure 21 has a first element outer edge 21A extending in the second direction X, a second element outer edge 21B located away from the first element outer edge 21A in the third direction Y and extending in the second direction X, a third element outer edge 21C extending in the third direction Y, and a fourth element outer edge 21D located away from the third element outer edge 21C in the second direction X and extending in the third direction Y. In a top view, the light-reflective member 60 and the second semiconductor structure 21 may be separated.

[0048] In a top view, the upper surface 60a of the light-reflective member 60 is located between the outer edges 60A to 60D of the light-reflective member 60 and the element outer edges 21A to 21D of the second semiconductor structure 21. The upper surface 60a of the light-reflective member 60 may be parallel to the second direction X, or it may be inclined. From the viewpoint of facilitating the placement of the first wiring section, which will be described later, it is preferable that the upper surface 60a of the light-reflective member 60 be a nearly flat surface. In the first direction Z, it is preferable that the height of the upper surface 60a of the light-reflective member 60 is the same as, or higher than, the height of the upper end of the first side surface 30c of the light-transmitting member 30.

[0049] As shown in Figure 3, it is preferable that the light-reflective member 60 covers the third side surface 21c of the second semiconductor structure 21. That is, the side surface (inner side surface) of the light-reflective member 60 has a first side surface portion 60b that covers the first side surface 30c of the light-transmitting member 30, and a second side surface portion 60c that is located between the first side surface portion 60b and the upper surface 60a in the first direction Z. The second side surface portion 60c directly or indirectly covers the third side surface 21c of the second semiconductor structure 21. As a result, the light-reflective member 60 reflects light directed toward the periphery of the second semiconductor structure 21 (in cross-sectional view, the third side surface 21c of the second semiconductor structure 21), thereby further improving the efficiency of light extraction in the forward direction.

[0050] When the first translucent substrate 41 is placed between the second semiconductor structure 21 and the translucent member 30, it is preferable that the light-reflecting member 60 also covers the sides of the first translucent substrate 41. This allows the light-reflecting member 60 to reflect light directed toward the periphery of the first translucent substrate 41 (the sides of the first translucent substrate 41 in a cross-sectional view), thereby further improving the efficiency of light extraction in the forward direction.

[0051] The light-reflective member 60 comprises a base resin and particles of a light-reflective substance contained in the resin. Examples of resins include silicone resins, modified silicone resins, epoxy resins, modified epoxy resins, acrylic resins, and fluororesins, each containing one or more of these. Examples of light-reflective substances include titanium dioxide, silicon dioxide, zirconium oxide, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, mullite, and combinations thereof. The average particle size of the light-reflective substance is, for example, 0.05 μm to 30 μm. The light-reflective member 60 may further contain pigments, light-absorbing materials such as carbon black, and wavelength-converting materials such as phosphors. In the light-reflective member 60, the particles of the light-reflective substance may be partially or entirely unevenly distributed, but it is preferable that they are dispersed. The content of the light-reflective substance in the light-reflective member 60 can be appropriately adjusted depending on the characteristics of the light-emitting device to be obtained. For example, it is preferable that the content of the light-reflective substance be 30 wt% or more. The light-reflecting member 60 may be made of a material with excellent heat dissipation properties. For example, the thermal conductivity of the light-reflecting member 60 is preferably 0.2 W / m·K or higher, and more preferably 1 W / m·K or higher. By setting a high thermal conductivity for the light-reflecting member 60, the heat dissipation of the light-emitting part 101 can be improved.

[0052] <1st wiring section> The first wiring section 71 is positioned on the upper surface 60a of the light-reflective member 60 and is electrically connected to the second electrode 52. The first wiring section 71 supplies current to the second semiconductor structure 21 through the second electrode 52. The first wiring section 71 has a first p-side wiring section 71p which is electrically connected to the second p-side electrode 52p, and a first n-side wiring section 71n which is electrically connected to the second n-side electrode 52n.

[0053] As shown in Figure 2, in a top view, the first p-side wiring portion 71p is located near the first corner 21E formed by the outer edge 21A of the first element and the outer edge 21C of the third element of the second semiconductor structure 21. The first n-side wiring portion 71n is located near the second corner 21F formed by the outer edge 21B of the second element and the outer edge 21D of the fourth element of the second semiconductor structure 21. The first p-side wiring portion 71p and the first n-side wiring portion 71n are positioned diagonally opposite each other in a top view of the rectangular second semiconductor structure 21. This reduces the bias in the distribution of current density in the planar direction of the second semiconductor structure 21 compared to the case where the first p-side wiring portion 71p and the first n-side wiring portion 71n are located in a region close to either the first corner 21E or the second corner 21F.

[0054] For example, the first wiring section 71 is electrically connected to the second electrode 52 via the second wiring section 72. The second wiring section 72 is positioned to overlap with the second electrode 52 in a top view and is connected to the first wiring section 71. In a top view, the first wiring section 71 and the second wiring section 72 are positioned adjacent to each other. The second wiring section 72 has a second p-side wiring section 72p and a second n-side wiring section 72n. The first p-side wiring section 71p is electrically connected to the second p-side electrode 52p via the second p-side wiring section 72p, and the first n-side wiring section 71n is electrically connected to the second n-side electrode 52n via the second n-side wiring section 72n. As shown in Figure 3, the second p-side wiring section 72p is in contact with the upper surface of the second p-side electrode 52p, and the second n-side wiring section 72n is in contact with the upper surface of the second n-side electrode 52n.

[0055] For example, as shown in Figure 2, in a top view, the second p-side electrode 52p extends from a position near the first corner 21E in the second direction X and the third direction Y. In a top view, the second p-side wiring portion 72p extends from the first p-side wiring portion 71p along the second p-side electrode 52p in the second direction X and the third direction Y. In a top view, the second n-side electrode 52n extends from a position near the second corner 21F in the second direction X and the third direction Y. In a top view, the second n-side wiring portion 72n extends from the first n-side wiring portion 71n along the second n-side electrode 52n in the second direction X and the third direction Y.

[0056] As the material for the first wiring section 71 and the second wiring section 72, for example, metals such as gold, aluminum, silver, copper, tungsten, titanium, platinum, nickel, palladium, iron, tin, or alloys containing at least one of these can be used. The first wiring section 71 and the second wiring section 72 may be a single layer of the above-mentioned metal material, or they may be a laminated structure having multiple metal layers. The first wiring section 71 and the second wiring section 72 may be composed of partially different materials. For example, the second p-side wiring section 72p may be integrally formed from the same material as the first p-side wiring section 71p, and the second n-side wiring section 72n may be integrally formed from the same material as the first n-side wiring section 71n.

[0057] Power is supplied to the light-emitting unit 101 through the first electrode 51 and the first wiring section 71. Figure 1 shows an example of a configuration for supplying power to the light-emitting unit 101. In this example, the light-emitting device 1 further comprises a substrate 200, a first conductive section 201 disposed on the substrate 200 and electrically connected to the first electrode 51, a second conductive section 202 disposed on the substrate 200, and conductive wires 81 and 82 connecting the first wiring section 71 and the second conductive section 202. The wires 81 and 82 can be made of metallic materials such as gold, aluminum, copper, or silver. The substrate 200 can be made of insulating materials such as glass epoxy, resin, or ceramics, semiconductor materials such as silicon, or conductive materials such as copper.

[0058] The first conductive portion 201 has a first p-side conductive portion 201p joined to the first p-side electrode 51p, and a first n-side conductive portion 201n joined to the first n-side electrode 51n.

[0059] The second conductive portion 202 has a second p-side conductive portion 202p and a second n-side conductive portion 202n. The first p-side wiring portion 71p and the second p-side conductive portion 202p are electrically connected via a wire 81. The first end 81a of the wire 81 is joined to the first p-side wiring portion 71p on the upper surface 60a of the light-reflective member 60. The second end 81b of the wire 81 is joined to the second p-side conductive portion 202p. The first n-side wiring portion 71n and the second n-side conductive portion 202n are electrically connected via a wire 82. The third end 82a of the wire 82 is joined to the first n-side wiring portion 71n on the upper surface 60a of the light-reflective member 60. The fourth end 82b of the wire 82 is joined to the second n-side conductive portion 202n.

[0060] The light-emitting device 1 has a configuration in which a first semiconductor structure 11 including a first active layer 13 and a second semiconductor structure 21 including a second active layer 23 are stacked in the first direction Z via a light-transmitting member 30. When both the first active layer 13 and the second active layer 23 are made to emit light, the light extraction efficiency in the forward direction (plus Z direction) per unit area of ​​the light-emitting device 1 can be improved.

[0061] Furthermore, the first active layer 13 and the second active layer 23 can each be controlled to emit light independently. For example, three drive modes can be selected: a first drive mode in which both the first active layer 13 and the second active layer 23 emit light; a second drive mode in which the first active layer 13 emits light but the second active layer 23 does not; and a third drive mode in which the second active layer 23 emits light but the first active layer 13 does not. When the emission peak wavelengths of the first active layer 13 and the second active layer 23 are different, the color tone of the light-emitting device 1 can be controlled by selecting the drive mode. In addition, in the first drive mode, the color tone of the light-emitting device 1 can be controlled by controlling the power supplied to the first active layer 13 and the second active layer 23, respectively. The first active layer 13 and the second active layer 23 can emit visible light and ultraviolet light. The first active layer 13 and the second active layer 23 can emit light with emission peak wavelengths in the range of 610 nm to 700 nm, light with emission peak wavelengths in the range of 430 nm to 490 nm, and light with emission peak wavelengths in the range of 495 nm to 565 nm. The emission peak wavelengths of the first active layer 13 and the second active layer 23 may be the same or different. If the emission peak wavelengths of the first active layer 13 and the second active layer 23 are different, it is preferable that the emission peak wavelength of the second active layer 23 is shorter than that of the first active layer 13. This reduces the absorption of light emitted by the first active layer 13 by the second active layer 23. For example, the first active layer 13 emits light with emission peak wavelengths in the range of 495 nm to 565 nm, and the second active layer 23 emits light with emission peak wavelengths in the range of 430 nm to 490 nm.

[0062] As shown in Figure 1, the first semiconductor structure 11 is positioned with the surface of the first p-side layer 14 facing the substrate 200 below. Light directed upward from the first active layer 13 of the first semiconductor structure 11 passes through the light-transmitting member 30 and the second light-emitting element 20 and is extracted in the front direction of the light-emitting device 1. The light-reflective conductive layer 15 and the protective resin 91 can reflect the light directed downward from the first active layer 13 upward, thereby improving the efficiency of light extraction in the front direction of the light-emitting device 1. The light-reflective member 60 can reflect the light directed from the first active layer 13 toward the light-reflective member 60 upward, thereby improving the efficiency of light extraction in the front direction of the light-emitting device 1.

[0063] The second semiconductor structure 21 is positioned with the surface of the second p-side layer 24 facing upward (towards the front of the light-emitting device 1). Light directed upward from the second active layer 23 of the second semiconductor structure 21 passes through the translucent conductive layer 25 and the protective film 27 and is extracted towards the front of the light-emitting device 1. In addition, the light-reflective member 60, the light-reflective conductive layer 15, and the protective resin 91 can reflect light directed downward from the second active layer 23 (including diagonally downward toward the light-reflective member 60) upward, thereby improving the efficiency of light extraction towards the front of the light-emitting device 1.

[0064] In the top view of the light-emitting section 101 shown in Figure 2, the region 300 (shaded region) where the first semiconductor structure 11, the second semiconductor structure 21, and the light-transmitting member 30 are located is the light-emitting region. The first wiring section 71, the second wiring section 72, and the second electrode 52, made of metal material, act as light shields that reduce the efficiency of light extraction in the front direction of the light-emitting device 1. Therefore, light from the light-emitting section 101 is mainly extracted in the front direction (plus Z direction) from the region 300 where the second wiring section 72 and the second electrode 52 are not located.

[0065] In a top view, it is preferable that the light-reflective member 60 be arranged to surround the periphery of region 300. That is, in a top view, the light-reflective member 60 is arranged to surround the periphery of the light-transmitting member 30 and the periphery of the first semiconductor structure 11. This allows the light-reflective member 60 to reflect upward light directed toward the periphery of the light-transmitting member 30 and the periphery of the first semiconductor structure 11, thereby improving the efficiency of light extraction in the front direction.

[0066] In this embodiment, the first wiring section 71 is positioned on the upper surface 60a of the light-reflective member 60. As a result, in a top view, the region 300 and the first wiring section 71 do not overlap, and the light is less likely to be blocked by the first wiring section 71, thereby improving the efficiency of light extraction in the forward direction of the light-emitting device 1. Furthermore, since the first wiring section 71 is positioned on the upper surface 60a of the light-reflective member 60, the first end 81a of the light-shielding wire 81 and the third end 82a of the wire 82 are also positioned on the upper surface 60a of the light-reflective member 60. That is, in a top view, the power supply unit located on the light-emitting surface side of the light-emitting device 1 is located on the upper surface 60a of the light-reflective member 60, outside the region 300. As a result, the power supply unit on the light-emitting surface side does not obstruct the extraction of light from the region 300, and the efficiency of light extraction in the forward direction can be improved.

[0067] As shown in Figure 2, in a top view, it is preferable that wire 81 extends from its first end 81a, which is joined to the first p-side wiring portion 71p, to the outside of the outer edges 60A to 60D of the light-reflective member 60, and does not overlap with the region 300 where the first semiconductor structure 11 and the second semiconductor structure 21 are located. Similarly, in a top view, it is preferable that wire 82 extends from its third end 82a, which is joined to the first n-side wiring portion 71n, to the outside of the outer edges 60A to 60D of the light-reflective member 60, and does not overlap with the region 300 where the first semiconductor structure 11 and the second semiconductor structure 21 are located. This prevents wires 81 and 82 from obstructing the extraction of light from region 300, thereby improving the efficiency of light extraction in the forward direction.

[0068] If the refractive index of the first translucent substrate 41 and the refractive index of the second translucent substrate 42 are different, directly bonding the first translucent substrate 41 and the second translucent substrate 42 will make reflection more likely at the interface between the first translucent substrate 41 and the second translucent substrate 42. If the refractive index of the first translucent substrate 41 and the refractive index of the second translucent substrate 42 are different, it is preferable to place a translucent member 30 having a refractive index between the refractive index of the first translucent substrate 41 and the refractive index of the second translucent substrate 42 between the first translucent substrate 41 and the second translucent substrate 42. This allows the translucent member 30 to function as an anti-reflective film, improving the efficiency of light extraction in the forward direction.

[0069] When the emission peak wavelength of the first active layer 13 and the emission peak wavelength of the second active layer 23 are different, it is preferable to arrange a light-transmitting member 30 having the following characteristics. The light-transmitting member 30 is given the characteristic of easily transmitting light in the emission wavelength range of the first active layer 13 and easily reflecting light in the emission wavelength range of the second active layer 23. Having such characteristics can improve the efficiency of light extraction in the forward direction. For example, if the emission peak wavelength of the first active layer 13 is longer than the emission peak wavelength of the second active layer 23, the first active layer 13 is likely to absorb light in the emission wavelength range of the second active layer 23. In this case, by arranging a light-transmitting member 30 with the above characteristics, the light from the second active layer 23 toward the first active layer 13 is reflected by the light-transmitting member 30, and the absorption of light by the first active layer 13 toward the second active layer 23 can be reduced, thereby improving the efficiency of light extraction in the forward direction.

[0070] Figure 5 is a schematic cross-sectional view of the light-emitting section according to a first modified example of the embodiment. The first modified example differs from the light-emitting device 1 of the embodiment shown in Figure 1 in that a first dielectric multilayer film 43 is arranged between the first semiconductor structure 11 and the light-transmitting member 30 instead of a second light-transmitting substrate 42. In other respects, the first modified example has basically the same structure as the light-emitting device 1 of the embodiment shown in Figure 1.

[0071] In the example shown in Figure 5, the first dielectric multilayer film 43 is located on the third surface 11a of the first semiconductor structure 11. Alternatively, the first dielectric multilayer film 43 may be located between the second translucent substrate 42 and the translucent member 30.

[0072] The translucent member 30 of the first modified example contains a phosphor. The first dielectric multilayer film 43 has low reflectivity to light from the first active layer 13 and high reflectivity to light from the translucent member 30. That is, the first dielectric multilayer film 43 has a higher reflectivity to light from the translucent member 30 than to light from the first active layer 13. In other words, the first dielectric multilayer film 43 has a higher transmittance to light from the first active layer 13 than to light from the translucent member 30. Therefore, light from the first active layer 13 is more likely to pass through the first dielectric multilayer film 43 and excite the phosphor contained in the translucent member 30, and the light emitted by the translucent member 30 (wavelength-converted light) is more likely to be reflected in the front direction by the first dielectric multilayer film 43. As a result, the proportion of wavelength-converted light lost due to internal scattering and internal absorption within the translucent member 30 can be reduced, and the efficiency of extracting the wavelength-converted light to the outside can be improved.

[0073] The first dielectric multilayer film 43 can be made of the same material as when the dielectric multilayer film is arranged as the protective resin 91 described above.

[0074] Furthermore, if the emission peak wavelength of the first active layer 13 and the emission peak wavelength of the second active layer 23 are different, it is preferable that the first dielectric multilayer film 43 has the function of transmitting light from the first active layer 13 and reflecting light from the second active layer 23.

[0075] Figure 6 is a schematic cross-sectional view of a part of the light-emitting section according to a second modification of the embodiment. The second modification differs from the light-emitting device 1 of the embodiment shown in Figure 1 in that, in the first direction Z, a part of the second side surface 60c of the light-reflective member 60 is located on the upper surface 60a side of the light-reflective member 60, rather than the upper surface 52a of the second p-side electrode 52p. In other respects, the first modification has basically the same structure as the light-emitting device 1 of the embodiment shown in Figure 1. In this case, light directed from the second active layer 23 toward the second p-side electrode 52p is more easily reflected in the front direction by the second side surface 60c of the light-reflective member 60, thereby further improving the efficiency of light extraction in the front direction.

[0076] As shown in Figure 6, the first p-side wiring portion 71p may be placed on a part of the second side portion 60c of the light-reflective member 60 that is located on the upper surface 60a side of the light-reflective member 60, which is located on the upper surface 60a side of the light-reflective member 60, rather than the upper surface 52a of the second p-side electrode 52p, in the first direction Z.

[0077] The embodiments of this disclosure include the following light-emitting device.

[0078] [Section 1] A translucent member having a first surface, a second surface located opposite the first surface in a first direction, and a first surface connecting the first surface and the second surface, A first semiconductor structure having a third surface facing the first surface, a fourth surface located on the opposite side of the third surface in the first direction, and a second surface connecting the third surface and the fourth surface, A second semiconductor structure having a fifth surface facing the second surface, a sixth surface located on the opposite side of the fifth surface in the first direction, and a third surface connecting the fifth surface and the sixth surface, A light-reflective member covering the first side surface of the light-transmitting member and the second side surface of the first semiconductor structure, A first electrode is disposed on the fourth side of the first semiconductor structure and electrically connected to the first semiconductor structure, A second electrode is disposed on the sixth side of the second semiconductor structure and electrically connected to the second semiconductor structure, A first wiring section is arranged on the upper surface of the light-reflective member and electrically connected to the second electrode, A light-emitting device equipped with the following features. [Section 2] The first semiconductor structure comprises a first n-side layer, a first p-side layer, and a first active layer located between the first n-side layer and the first p-side layer. The first electrode comprises a first n-side electrode electrically connected to the first n-side layer and a first p-side electrode electrically connected to the first p-side layer. The second semiconductor structure comprises a second n-side layer, a second p-side layer, and a second active layer located between the second n-side layer and the second p-side layer. A translucent conductive layer is placed on the second p-side layer, The light-emitting apparatus according to claim 1, wherein the second electrode comprises a second n-side electrode electrically connected to the second n-side layer and a second p-side electrode electrically connected to the light-transmitting conductive layer. [Section 3] The light-emitting apparatus according to item 2, wherein, in a top view, the second n-side electrode and the second p-side electrode are located outside the outer edge of the first active layer of the first semiconductor structure. [Section 4] The light-emitting device according to any one of claims 1 to 3, wherein, in a top view, the light-reflective member is arranged to surround the translucent member and the first semiconductor structure. [Section 5] circuit board and A first conductive portion is disposed on the substrate and electrically connected to the first electrode, A second conductive portion disposed on the substrate, A conductive wire connecting the first wiring section and the second conductive section, Furthermore, In a top view, the wire does not overlap with the first semiconductor structure and the second semiconductor structure, as described in any one of items 1 to 4. [Section 6] A light-emitting device according to any one of items 1 to 5, wherein, in a top view, the first electrode and the second electrode do not overlap. [Section 7] The light-transmitting member includes a phosphor, A first dielectric multilayer film located between the first semiconductor structure and the light-transmitting member, A first translucent substrate located between the second semiconductor structure and the translucent member, A light-emitting device according to any one of items 1 to 6, further comprising the above. [Section 8] The light-emitting device according to any one of claims 1 to 7, wherein the side surface of the light-reflective member has a first side surface portion that covers the first side surface of the light-transmitting member and a second side surface portion located between the first side surface portion and the upper surface in the first direction. [Section 9] The light-emitting device according to item 8, wherein a portion of the second side surface of the light-reflective member is located on the upper surface side of the light-reflective member, in the first direction, relative to the upper surface of the second electrode.

[0079] The embodiments of this disclosure have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. All forms that a person skilled in the art can implement by appropriately modifying the design based on the above-described embodiments of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention. Furthermore, within the scope of the idea of ​​the present invention, a person skilled in the art can conceive of various modifications and alterations, and these modifications and alterations also fall within the scope of the present invention. [Explanation of Symbols]

[0080] 1…Light emission device, 10…First light emission element, 11…First semiconductor structure, 11a…Third surface, 11b…Fourth surface, 11c…Second side surface, 12…1n side layer, 13…First active layer, 14…1p side layer, 20…Second light emission element, 21…Second semiconductor structure, 21a…Fifth surface, 21b…Sixth surface, 21c…Third side surface, 22…2n side layer, 23…Second active layer, 24…2p side layer, 25…Transparent conductive layer, 30…Transparent component, 30a…First surface, 30b…Second surface, 30c…First side surface, 41…First transparent substrate, 42…Second transparent substrate, 43…First translucent substrate Multilayer film, 51…first electrode, 51n…1n-side electrode, 51p…1p-side electrode, 52…second electrode, 52n…2n-side electrode, 52p…2p-side electrode, 60…light-reflective material, 60a…top surface, 60b…first side surface, 60c…second side surface, 71…first wiring section, 71n…1n-side wiring section, 71p…1p-side wiring section, 72…second wiring section, 72n…2n-side wiring section, 72p…2p-side wiring section, 81~82…wabi-sabi, 91…protective resin, 101…light-emitting section, 200…substrate, 201…first conductive section, 202…second conductive section, 300…field

Claims

1. A translucent member having a first surface, a second surface located opposite the first surface in a first direction, and a first surface connecting the first surface and the second surface, A first semiconductor structure having a third surface facing the first surface, a fourth surface located on the opposite side of the third surface in the first direction, and a second surface connecting the third surface and the fourth surface, A second semiconductor structure having a fifth surface facing the second surface, a sixth surface located on the opposite side of the fifth surface in the first direction, and a third surface connecting the fifth surface and the sixth surface, A light-reflective member covering the first side surface of the light-transmitting member and the second side surface of the first semiconductor structure, A first electrode is disposed on the fourth side of the first semiconductor structure and electrically connected to the first semiconductor structure, A second electrode is disposed on the sixth side of the second semiconductor structure and electrically connected to the second semiconductor structure, A first wiring section is arranged on the upper surface of the light-reflective member and electrically connected to the second electrode, A light-emitting device equipped with the following features.

2. The first semiconductor structure comprises a first n-side layer, a first p-side layer, and a first active layer located between the first n-side layer and the first p-side layer. The first electrode comprises a first n-side electrode electrically connected to the first n-side layer and a first p-side electrode electrically connected to the first p-side layer. The second semiconductor structure comprises a second n-side layer, a second p-side layer, and a second active layer located between the second n-side layer and the second p-side layer. A translucent conductive layer is placed on the second p-side layer, The light-emitting device according to claim 1, wherein the second electrode comprises a second n-side electrode electrically connected to the second n-side layer and a second p-side electrode electrically connected to the light-transmitting conductive layer.

3. The light-emitting device according to claim 2, wherein, in a top view, the second n-side electrode and the second p-side electrode are located outside the outer edge of the first active layer of the first semiconductor structure.

4. The light-emitting device according to any one of claims 1 to 3, wherein, in a top view, the light-reflective member is arranged to surround the translucent member and the first semiconductor structure.

5. circuit board and A first conductive portion is disposed on the substrate and electrically connected to the first electrode, A second conductive portion disposed on the substrate, A conductive wire connecting the first wiring section and the second conductive section, Furthermore, In a top view, the wire does not overlap with the first semiconductor structure and the second semiconductor structure, as described in any one of claims 1 to 3.

6. The light-emitting device according to any one of claims 1 to 3, wherein, in a top view, the first electrode and the second electrode do not overlap.

7. The light-transmitting member includes a phosphor, A first dielectric multilayer film located between the first semiconductor structure and the light-transmitting member, A first translucent substrate located between the second semiconductor structure and the translucent member, A light-emitting device according to any one of claims 1 to 3, further comprising the above.

8. The light-emitting device according to any one of claims 1 to 3, wherein the side surface of the light-reflective member has a first side surface portion that covers the first side surface of the light-transmitting member and a second side surface portion located between the first side surface portion and the upper surface in the first direction.

9. The light-emitting device according to claim 8, wherein a portion of the second side surface of the light-reflective member is located on the upper surface side of the light-reflective member, in the first direction, more so than the upper surface of the second electrode.

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