Light-emitting element and light-emitting device

Abstract

To provide a light-emitting element and a light-emitting device having a desired luminescence distribution.SOLUTION: A semiconductor structure has, in a top view, a long side extending in a first direction and a short side shorter than the long side extending in a second direction perpendicular to the first direction. The semiconductor structure has an n-side layer, a p-side layer, and an active layer. The n-side layer has a plurality of first areas, a semiconductor structure, a plurality of n-side external connection parts, and a plurality of p-side external connection parts. The plurality of first areas is exposed from the active layer and the p-side layer. The semiconductor structure has a second area in which the active layer and the p-side layer are arranged. The plurality of n-side external connection parts is arranged above the second area and electrically connected to the n-side electrode. The plurality of p-side external connection parts is arranged on the p-side electrode and electrically connected to the p-side electrode. In the top view, the first areas are arranged between the plurality of n-side external connection parts and between the plurality of p-side external connection parts.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light-emitting element and a light-emitting device. [Background technology]

[0002] Patent Document 1 proposes a light-emitting element with a rectangular top-view shape. Light-emitting elements with a rectangular top-view shape tend to have a poor light emission distribution. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2014-11275 [Overview of the project] [Problems that the invention aims to solve]

[0004] The present invention aims to provide a light-emitting element and a light-emitting device having a desired light emission distribution. [Means for solving the problem]

[0005] According to one aspect of the present invention, a light-emitting element is a semiconductor structure having, in a top view, a long side extending in a first direction and a short side extending in a second direction perpendicular to the first direction and shorter than the long side, and comprising an n-side layer, a p-side layer, and an active layer located between the n-side layer and the p-side layer, wherein the n-side layer comprises a plurality of first regions exposed from the active layer and the p-side layer, and a second region in which the active layer and the p-side layer are arranged, and an insulating film covering the semiconductor structure having a plurality of first openings located in the first region and a plurality of second openings located on the p-side layer above the second region, and the n-side layer and the plurality of first openings are electrically charged A light-emitting element comprises an electrically connected n-side electrode, a plurality of p-side electrodes electrically connected to the p-side layer at a plurality of second openings, a plurality of n-side external connection portions arranged above the second region and electrically connected to the n-side electrode, and a plurality of p-side external connection portions arranged on the p-side electrode and electrically connected to the p-side electrode, wherein, in a top view, the light-emitting element has an n-side region where the plurality of n-side external connection portions are arranged, and a p-side region adjacent to the n-side region in a first direction where the plurality of p-side external connection portions are arranged, and in a top view, the first region is arranged between the plurality of n-side external connection portions and between the plurality of p-side external connection portions. [Effects of the Invention]

[0006] According to the present invention, it is possible to provide a light-emitting element and a light-emitting device having a desired light emission distribution. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic top view of the light-emitting element of the first embodiment. [Figure 2] This is a schematic cross-sectional view along line II-II in Figure 1. [Figure 3] This is a schematic cross-sectional view along line III-III in Figure 1. [Figure 4] This is a schematic top view of the light-emitting element of the second embodiment. [Figure 5] This is a schematic top view of the light-emitting device of the third embodiment. [Figure 6] Figure 5 is a schematic cross-sectional view along the line VI-VI. [Figure 7A] This is a schematic top view illustrating the arrangement of multiple light-emitting elements in the light-emitting device of the third embodiment. [Figure 7B] This is a schematic top view illustrating the arrangement of multiple light-emitting elements in the light-emitting device of the third embodiment. [Modes for carrying out the invention]

[0008] The embodiments will be described below with reference to the drawings. In each drawing, the same components are denoted by the same reference numerals. Note that each drawing is a schematic representation of the embodiment, and therefore the scale, spacing, or positional relationship of each component may be exaggerated, or some components may be omitted from the illustration. In addition, cross-sectional views may show only the cut surface.

[0009] In the following description, components having substantially the same function are indicated by common reference numerals, and their descriptions may be omitted. Furthermore, terms indicating specific directions or positions (e.g., "up," "down," and other terms including these) may be used. However, these terms are used merely for clarity to indicate the relative directions or positions in the referenced drawings. If the relative directional or positional relationships expressed by terms such as "up" and "down" in the referenced drawings are the same, the arrangement in drawings other than those disclosed, actual products, etc., does not have to be identical to those in the referenced drawings. In this specification, the positional relationship expressed as "up" includes both cases where the components are touching and cases where they are not touching but are located above.

[0010] [First Embodiment] The light-emitting element 1 of the first embodiment comprises a semiconductor structure 10. In the top view of the light-emitting element 1 shown in Figure 1, two mutually orthogonal directions are denoted as the first direction X and the second direction Y. The shape of the semiconductor structure 10 in the top view is rectangular. The corners of this rectangle may be right angles or rounded. In the top view, the semiconductor structure 10 has two long sides 10a extending in the first direction X and two short sides 10b extending in the second direction Y. The length of the short sides 10b is shorter than the length of the long sides 10a. For example, the length of the long sides 10a is between 2 and 5 times the length of the short sides 10b. For example, the length of the long sides 10a is between 1 mm and 3 mm. For example, the length of the short sides 10b is between 0.5 mm and 1.5 mm.

[0011] The semiconductor structure 10 is made of a nitride semiconductor. In this specification, "nitride semiconductor" means, for example, In x Al y Ga 1-x-y This term includes semiconductors of all compositions obtained by varying the composition ratios x and y within the respective ranges in the chemical formula N(0≦x≦1,0≦y≦1,x+y≦1). Furthermore, "nitride semiconductors" also include those that further contain group V elements other than N (nitrogen) in the above chemical formula, and those that further contain various elements added to control various physical properties such as the conductivity type of the semiconductor.

[0012] As shown in FIG. 2, the semiconductor structure 10 has an n-side layer 11, an active layer 12, and a p-side layer 13. The direction from the n-side layer 11 toward the p-side layer 13 and perpendicular to the first direction X and the second direction Y is defined as the third direction Z. The active layer 12 is located between the n-side layer 11 and the p-side layer 13 in the third direction Z. The active layer 12 is a light-emitting layer that emits light and has, for example, a MQW (Multiple Quantum Well) structure including a plurality of barrier layers and a plurality of well layers. The n-side layer 11 has a semiconductor layer containing n-type impurities. The p-side layer 13 has a semiconductor layer containing p-type impurities. The light emitted by the active layer 12 is, for example, ultraviolet light or visible light. The emission peak wavelength of blue light is, for example, 430 nm or more and 490 nm or less. The emission peak wavelength of green light is, for example, 500 nm or more and 540 nm or less. The emission peak wavelength of ultraviolet light is 400 nm or less.

[0013] The n-side layer 11 has a plurality of first regions 11a exposed from the active layer 12 and the p-side layer 13, and a second region 11b where the active layer 12 and the p-side layer 13 are disposed. In a top view, the area of the second region 11b is larger than the area of the first region 11a.

[0014] The semiconductor structure 10 is disposed on a substrate 90. In the third direction Z, the n-side layer 11, the active layer 12, and the p-side layer 13 are located in order from the substrate 90 side. The substrate 90 can be an insulating substrate such as sapphire or spinel. Further, as the substrate 90, a conductive substrate such as GaN, SiC (including 6H, 4H, 3C), ZnS, ZnO, GaAs, or Si may be used. Also, the light-emitting device 1 may not have the substrate 90.

[0015] The light-emitting device 1 further includes a p-side electrode 20, an n-side electrode 23, a coating film 30, an insulating film 40, a protective film 50, a plurality of n-side external connection portions 61, and a plurality of p-side external connection portions 62. The p-side electrode 20 includes a first p-side electrode 21 and a second p-side electrode 22.

[0016] The first p-side electrode 21 is positioned on the upper surface 13a of the p-side layer 13 above the second region 11b and is electrically connected to the p-side layer 13. The first p-side electrode 21 is made of a metallic material. As the material for the first p-side electrode 21, for example, a metal such as silver or aluminum, or an alloy containing these metals can be used.

[0017] The coating film 30 covers the semiconductor structure 10 and the first p-side electrode 21. The coating film 30 has a plurality of sixth openings 31 located on the first p-side electrode 21. The coating film 30 is, for example, a silicon oxide film or a silicon nitride film. The coating film 30 may be a single-layer structure or a laminated structure in which a plurality of insulating films are stacked.

[0018] The insulating film 40 covers the semiconductor structure 10 and the coating film 30. The insulating film 40 has a plurality of first openings 41 located in the first region 11a and a plurality of second openings 42 located on the p-side layer 13 above the second region 11b. The insulating film 40 is, for example, a silicon oxide film or a silicon nitride film. The insulating film 40 may be a single-layer structure or a laminated structure in which a plurality of insulating films are stacked.

[0019] The first region 11a has a portion that is exposed from the insulating film 40 at the first opening 41. In the example shown in Figure 1, the first region 11a and the first opening 41 are represented by dashed circles. In a top view, the circular first opening 41 is located inside the circular first region 11a. Note that the shapes of the first region 11a and the first opening 41 in a top view are not limited to circles, but may be elliptical, quadrilateral, or polygons with pentagons or more. Note that the shapes of the first region 11a in a top view are not all the same, and there may be first regions 11a with different shapes in a top view. Similarly, the shapes of the first opening 41 in a top view are not all the same, and there may be first openings 41 with different shapes in a top view.

[0020] At least a portion of the second opening 42 of the insulating film 40 overlaps with the sixth opening 31 of the coating film 30 in a top view. The first p-side electrode 21 has a portion that is exposed from the coating film 30 at the sixth opening 31 and exposed from the insulating film 40 at the second opening 42 that overlaps with the sixth opening 31 in a top view.

[0021] A portion of the n-side electrode 23 is placed on the insulating film 40 and positioned above the p-side layer 13 via the insulating film 40. The n-side electrode 23 is in contact with the first region 11a at a plurality of first openings 41 and is electrically connected to the n-side layer 11. It is preferable that the shape of the plurality of first openings 41 in a top view is all the same, and that the contact area between the n-side electrode 23 and the n-side layer 11 at each of the plurality of first openings 41 is all the same. Note that the contact area between the n-side electrode 23 and the n-side layer 11 at each of the plurality of first openings 41 is all the same, including cases where the respective areas differ by a range of approximately ±3%. Furthermore, if the contact area between the n-side electrode 23 and the n-side layer 11 at each of the plurality of first openings 41 is all the same, the shape of a portion of the plurality of first openings 41 in a top view may be different.

[0022] The second p-side electrodes 22 are positioned in each of the multiple second openings 42 and are in contact with the first p-side electrodes 21. The second p-side electrodes 22 are electrically connected to the p-side layer 13 via the first p-side electrodes 21. In the example shown in Figures 1 and 2, the multiple second p-side electrodes 22 are spaced apart and positioned between the four p-side external connection parts 62 and the first p-side electrodes 21. In a top view, the second p-side electrodes 22 are positioned so as not to overlap with the first region 11a.

[0023] The n-side electrode 23 and the second p-side electrode 22 are made of a metallic material. As the material for the n-side electrode 23 and the second p-side electrode 22, for example, metals such as aluminum, copper, titanium, nickel, platinum, and tungsten, or alloys containing these metals, can be used. Each of the n-side electrode 23 and the second p-side electrode 22 may have a single-layer structure or a laminated structure in which multiple metal layers are stacked.

[0024] The area in which the first p-side electrode 21 contacts the p-side layer 13 in the second region 11b is larger than the area in which the n-side electrode 23 contacts the n-side layer 11 in the first region 11a.

[0025] The protective film 50 covers the n-side electrode 23 and the second p-side electrode 22. The protective film 50 has a plurality of fourth openings 51 located on the n-side electrode 23 and a plurality of fifth openings 52 located on the second p-side electrode 22. The protective film 50 is, for example, a silicon oxide film or a silicon nitride film. The protective film 50 may be a single-layer structure or a laminated structure in which a plurality of insulating films are stacked.

[0026] The n-side electrode 23 has a portion exposed from the protective film 50 at the fourth opening 51. The second p-side electrode 22 has a portion exposed from the protective film 50 at the fifth opening 52.

[0027] The n-side external connection portion 61 is positioned above the second region 11b and is electrically connected to the n-side electrode 23. The n-side external connection portion 61 is in contact with the n-side electrode 23 at the fourth opening 51. The n-side external connection portion 61 is electrically connected to the n-side layer 11 via the n-side electrode 23.

[0028] The p-side external connection portion 62 is positioned on the second p-side electrode 22 and is electrically connected to the second p-side electrode 22. The p-side external connection portion 62 is in contact with the second p-side electrode 22 at the fifth opening 52. The p-side external connection portion 62 is electrically connected to the p-side layer 13 via the first p-side electrode 21 and the second p-side electrode 22.

[0029] The n-side external connection portion 61 and the p-side external connection portion 62 are made of a metallic material. As the material for the n-side external connection portion 61 and the p-side external connection portion 62, for example, metals such as titanium, nickel, platinum, gold, and tungsten, or alloys containing these metals, can be used. Each of the n-side external connection portion 61 and the p-side external connection portion 62 may have a single-layer structure or a laminated structure in which multiple metal layers are stacked.

[0030] As shown in Figure 1, in a top view, the light-emitting element 1 has an n-side region 200n where a plurality of n-side external connection parts 61 are arranged, and a p-side region 200p adjacent to the n-side region 200n in the first direction X, where a plurality of p-side external connection parts 62 are arranged. A plurality of first regions 11a are arranged in both the n-side region 200n and the p-side region 200p. In a top view, the distance between the first regions 11a arranged in the n-side region 200n is the same as the distance between the first regions 11a arranged in the p-side region 200p. Note that the distance between the first regions 11a arranged in the n-side region 200n and the distance between the first regions 11a arranged in the p-side region 200p are not all the same; the first regions 11a may be arranged so that some of the distances in a top view are different.

[0031] In a top view, the first region 11a is arranged between multiple n-side external connection parts 61 and multiple p-side external connection parts 62. In other words, the connection parts between the n-side electrode 23 and the n-side layer 11 are arranged between multiple n-side external connection parts 61 and multiple p-side external connection parts 62. This reduces the bias in the arrangement of the connection parts between the n-side electrode 23 and the n-side layer 11 for a rectangular light-emitting element 1, and thus reduces the bias in the light emission distribution.

[0032] When the light-emitting element 1 is mounted on a substrate, bonding members are placed between the n-side external connection part 61 and the substrate, and between the p-side external connection part 62 and the substrate. The light-emitting element 1 is mounted on the substrate, for example, by flip-chip mounting. In a top view, the n-side external connection part 61 and the p-side external connection part 62 are not located in the first region 11a, so the load from the bonding members during mounting to the substrate is less likely to be applied to the first region 11a. This reduces the occurrence of cracks in the insulating film 40 located in the first region 11a, the insulating film 40 located to cover the step between the first region 11a and the second region 11b, and the protective film 50 located in the first region 11a. As a result, the reliability of the light-emitting device can be improved.

[0033] For example, multiple n-side external connection parts 61 are arranged in a first direction X and a second direction Y, and multiple p-side external connection parts 62 are arranged in a first direction X and a second direction Y. In the example shown in Figure 1, four n-side external connection parts 61 are arranged in a first direction X and a second direction Y in the n-side region 200n, and four p-side external connection parts 62 are arranged in a first direction X and a second direction Y in the p-side region 200p. In the n-side region 200n, five or more n-side external connection parts 61 may be arranged in a first direction X and a second direction Y, and in the p-side region 200p, five or more p-side external connection parts 62 may be arranged in a first direction X and a second direction Y. In addition, in the n-side region 200n, two or more n-side external connection parts 61 may be arranged in a first direction X only, or two or more n-side external connection parts 61 may be arranged in a second direction Y only. In the p-side region 200p, two or more p-side external connection parts 62 may be arranged side by side only in the first direction X, or two or more p-side external connection parts 62 may be arranged side by side only in the second direction Y.

[0034] In a top view, it is preferable that the first opening 41 is arranged between adjacent n-side external connection parts 61 in the first direction X, between adjacent n-side external connection parts 61 in the second direction Y, between adjacent p-side external connection parts 62 in the first direction X, and between adjacent p-side external connection parts 62 in the second direction Y. This reduces the bias in the light emission distribution in a configuration where multiple n-side external connection parts 61 are arranged side by side in the first direction X and the second direction Y, and multiple p-side external connection parts 62 are arranged side by side in the first direction X and the second direction Y.

[0035] For example, in a top view, one n-side external connection portion 61 has a first side 61a extending in a first direction X and a second side 61b extending in a second direction Y and shorter than the first side 61a. Similarly, one p-side external connection portion 62 has a first side 62a extending in a first direction X and a second side 62b extending in a second direction Y and shorter than the first side 62a. The top view shapes of the n-side external connection portion 61 and the p-side external connection portion 62 are both rectangular. In the example shown in Figure 1, the top view shapes of the n-side external connection portion 61 and the p-side external connection portion 62 are all the same. It is not limited to making the top view shapes of the n-side external connection portion 61 and the p-side external connection portion 62 all the same; the n-side external connection portion 61 and / or p-side external connection portion 62 may have different top view shapes. For example, the lengths of the first sides 61a and 62a are between 10% and 30% of the length of the longer side 10a. For example, the lengths of the first sides 61a and 62a are between 300 μm and 600 μm. For example, the lengths of the second sides 61b and 62b are between 15% and 50% of the length of the shorter side 10b. For example, the lengths of the second sides 61b and 62b are between 200 μm and 500 μm.

[0036] In a top view, when the areas of the multiple first openings 41 are all the same, it is preferable that the number of first openings 41 positioned between the first sides 61a of opposing n-side external connection parts 61 is greater than the number of first openings 41 positioned between the second sides 61b of opposing n-side external connection parts 61. Similarly, in a top view, when the areas of the multiple first openings 41 are all the same, it is preferable that the number of first openings 41 positioned between the first sides 62a of opposing p-side external connection parts 62 is greater than the number of first openings 41 positioned between the second sides 62b of opposing p-side external connection parts 62. This reduces the bias in the light emission distribution in a configuration in which multiple n-side external connection parts 61 having a first side 61a longer than the second side 61b and multiple p-side external connection parts 62 having a first side 62a longer than the second side 62b are arranged. In the example shown in Figure 1, two first openings 41 are located between the first sides 61a of opposing n-side external connection parts 61, and one first opening 41 is located between the second sides 61b of opposing n-side external connection parts 61. In addition, two first openings 41 are located between the first sides 62a of opposing p-side external connection parts 62, and one first opening 41 is located between the second sides 62b of opposing p-side external connection parts 62.

[0037] Furthermore, in a top view, it is preferable to also place the first opening 41 between the n-side external connection portion 61 and the p-side external connection portion 62. This further reduces the bias in the light emission distribution. In the example shown in Figure 1, one first opening 41 is placed between the adjacent n-side external connection portion 61 and p-side external connection portion 62 in the first direction X. In a top view, two first openings 41 are placed between the n-side region 200n and the p-side region 200p.

[0038] In a top view, it is preferable that the shortest distance between adjacent n-side external connection portions 61 and p-side external connection portions 62 is longer than the shortest distance between adjacent n-side external connection portions 61 and the shortest distance between adjacent p-side external connection portions 62. This reduces the electrical connection between the n-side external connection portions 61 and p-side external connection portions 62 by the bonding member when the light-emitting element is bonded to the substrate using a bonding member, as will be described later. The shortest distance between adjacent n-side external connection portions 61 and the shortest distance between adjacent p-side external connection portions 62 is, for example, 80 μm or more and 120 μm or less. The shortest distance between adjacent n-side external connection portions 61 and p-side external connection portions 62 is, for example, 100 μm or more and 300 μm or less.

[0039] Furthermore, the n-side layer 11 has a third region 11c exposed from the active layer 12 and the p-side layer 13. The third region 11c has a portion exposed from the coating film 30. In a top view, the third region 11c extends along the long side 10a and the short side 10b, continuously enclosing the first region 11a and the second region 11b. The third region 11c is located on the outer periphery of the semiconductor structure 10.

[0040] The n-side electrode 23 is in contact with the n-side layer 11 not only in the first region 11a but also in the third region 11c, and is electrically connected to the n-side layer 11. This further reduces the bias in the emission distribution. For example, the portion of the third region 11c that is exposed from the coating film 30 is arranged continuously around the outer periphery of the semiconductor structure 10, and the connection between the n-side electrode 23 and the n-side layer 11 in the third region 11c continuously surrounds the first region 11a and the second region 11b.

[0041] [Second Embodiment] As shown in Figure 4, the light-emitting element 2 of the second embodiment has basically the same structure as that of the first embodiment, except that in the third region 11c, the n-side electrode 23 is in partial contact with the n-side layer 11 through a plurality of third openings 43 of the insulating film 40.

[0042] The n-side layer 11 of the light-emitting element 2 has two corners C that are spaced apart in a first direction X when viewed from above. Each corner C includes a portion of the long side 10a and a portion of the short side 10b. The length of the portion of the long side 10a included in the corner C is, for example, 5% to 25% of the length of the long side 10a. The length of the portion of the short side 10b included in the corner C is, for example, 10% to 50% of the length of the short side 10b.

[0043] In a top view, the insulating film 40 has a plurality of third openings 43 located at each of the two corners C. At one corner C, the plurality of third openings 43 are arranged in a line in the first direction X and the second direction Y. In Figure 4, the third openings 43 located at the corners C are represented by dashed circles. The shape of the third openings 43 in a top view is not limited to circles, but may be elliptical, quadrilateral, or polygon with pentagons or more.

[0044] The third region 11c has a portion that is exposed from the insulating film 40 at the third opening 43. In the portion other than the third opening 43, the third region 11c is covered by the coating film 30 and the insulating film 40. The n-side electrode 23 is in contact with the third region 11c at the third opening 43 and is electrically connected to the n-side layer 11. In the portion of the third region 11c where the third opening 43 is not located, it is covered by the insulating film 40 and is not in contact with the n-side electrode 23. In the example shown in Figure 4, the n-side electrode 23 is electrically connected to the n-side layer 11 only in the portion of the third region 11c located at the third opening 43.

[0045] According to the second embodiment of the light-emitting element 2, the brightness of the corner C having a portion where the n-side electrode 23 connects to the third region 11c through the third aperture 43 can be made higher than that of the corner where the third aperture 43 is not located. This makes it possible to create a light-emitting element that has a light emission distribution in which a part of the corner of the light-emitting element has a higher brightness than other regions.

[0046] [Third Embodiment] Next, as a third embodiment, a light-emitting device including multiple light-emitting elements will be described.

[0047] The light-emitting device 100 shown in FIGS. 5 and 6 includes the light-emitting element 2 of the second embodiment as a light-emitting element. The light-emitting device 100 includes a substrate 110 and, for example, two light-emitting elements 2 disposed on the substrate 110.

[0048] The substrate 110 is an insulating substrate, for example, a ceramic substrate or a resin substrate. A plurality of electronic components 113a, 113b, 113c are also disposed on the substrate 110. The electronic components 113a, 113b, 113c are, for example, a thermistor, a transistor, a rectifying diode, and the like.

[0049] In a top view, the light-emitting element 2 is surrounded by the first covering member 111. The electronic components 113a, 113b, 113c are covered by the first covering member 111. In a top view, the light-emitting element 2 disposed in the region surrounded by the first covering member 111 is covered by the second covering member 112. For the first covering member 111 and the second covering member 112, a resin material such as a phenyl silicone resin or a dimethyl silicone resin can be used, for example. The first covering member 111 and the second covering member 112 may include, for example, a light-scattering member. As the light-scattering member, titanium oxide, aluminum oxide can be used, for example. Further, the second covering member 112 may have a function as a lens.

[0050] The second covering member 112 can include a phosphor. As the phosphor, yttrium aluminum garnet-based phosphors (for example, Y3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet-based phosphors (for example, Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet-based phosphors (for example, Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (for example, Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (for example, Sr4Al 14 O 25 :Eu), chlorosilicate-based phosphors (for example, Ca8MgSi4O 16Cl2:Eu), β-sialon phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 Nitride-based phosphors such as (Sr,Ca)AlSiN3:Eu), SLA-based phosphors (e.g., SrLiAl3N4:Eu), CASN-based phosphors (e.g., CaAlSiN3:Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu), KSF-based phosphors (e.g., K2SiF6:Mn), KSAF-based phosphors (e.g., K2Si 0.99 Al 0.01 F 5.99 Fluoride-based phosphors such as :Mn or MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), phosphors having a perovskite structure (e.g., CsPb(F,Cl,Br,I)3), or quantum dot phosphors (e.g., CdSe, InP, AgInS2, or AgInSe2) can be used.

[0051] The area where the second covering member 112 is placed is defined as the light-emitting area 120. In Figure 5, the shape of the light-emitting area 120 in a top view is shown as circular, but the shape of the light-emitting area 120 in a top view may be elliptical, quadrilateral, or a polygon with pentagons or more.

[0052] The light-emitting device 100 can be used, for example, in lighting mounted on a vehicle. The light-emitting device 100 can emit, for example, red, white, or amber light. The red-emitting light-emitting device 100 can be used, for example, in taillights, brake lights, etc. mounted on a vehicle. The substrate 110 has, for example, two pin holes 115 formed therein. When the light-emitting device 100 is mounted in a socket for vehicle lighting, the external terminals of the socket are inserted into the pin holes 115. A conductor is formed on the inner circumferential surface of the pin holes 115, which is connected to a wiring pattern formed on the surface of the substrate 110. The external terminals inserted into the pin holes 115 make contact with the conductor and are electrically connected to the wiring pattern on the surface of the substrate 110. The wiring pattern is electrically connected to the light-emitting element 2 and electronic components 113a, 113b, and 113c.

[0053] The two light-emitting elements 2 are arranged on the substrate 110 such that their corners C, where the n-side electrode 23 connects to the third region 11c through the third aperture 43, face each other in the second direction Y. This allows the brightness of the portion of the light-emitting region 120 where the corners C face each other to be higher than the brightness of the portion where the corners C do not face each other. The portion where the corners C do not face each other is located on the outer periphery of the light-emitting region 120. Therefore, the brightness of the portion of the light-emitting region 120 inside the outer periphery can be higher than that of the outer periphery.

[0054] On the surface of the substrate 110, n-side pads and p-side pads electrically connected to the wiring pattern are arranged. Multiple (four in the example of Figure 4) n-side external connection parts 61 of each light-emitting element 2 are joined to one n-side pad via a bonding member. Multiple (four in the example of Figure 4) p-side external connection parts 62 of each light-emitting element 2 are joined to one p-side pad via a bonding member. The n-side pad to which the multiple n-side external connection parts 61 of one light-emitting element 2 are joined is not divided. The p-side pad to which the multiple p-side external connection parts 62 of one light-emitting element 2 are joined is not divided. For example, solder can be used as the bonding member.

[0055] Three or more light-emitting elements may be arranged on the substrate 110. Figures 7A and 7B show an example in which three light-emitting elements are arranged on the substrate 110.

[0056] In the example shown in Figure 7A, a light-emitting element 3 is positioned between two light-emitting elements 2, which are arranged so that their corners C face each other in the second direction Y. In a top view, the length of the light-emitting element 3 in the first direction X is shorter than the length of the light-emitting elements 2 in the first direction X. The light-emitting element 3 and the two light-emitting elements 2 are connected so that their light emission can be controlled individually. This allows the light-emitting device to switch between a first mode in which the light-emitting element 3 is not emitted and the two light-emitting elements 2 are emitted; a second mode in which the two light-emitting elements 2 are not emitted and the light-emitting element 3 is emitted; and a third mode in which the two light-emitting elements 2 and the light-emitting element 3 are emitted. Furthermore, when each light-emitting element is emitted, the light-emitting element 3 may be emitted at a lower brightness than that of the light-emitting elements 2.

[0057] In the example shown in Figure 7B, the light-emitting element 1 of the first embodiment is positioned between two light-emitting elements 2, which are arranged so that their corners C face each other in the second direction Y. In the light-emitting element 1, the connection portion between the n-side electrode 23 and the third region 11c of the n-side layer 11 extends in the first direction X on the long side 10a side facing the long side 10a of each light-emitting element 2. Alternatively, the light-emitting element positioned between the two light-emitting elements 2 may have four corners, each having a corner C where the n-side electrode 23 connects to the third region 11c through a third opening 43.

[0058] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. All forms that a person skilled in the art can implement by appropriately modifying the design based on the above-described embodiments of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention. Furthermore, within the scope of the idea of ​​the present invention, a person skilled in the art can conceive of various modifications and alterations, and these modifications and alterations also fall within the scope of the present invention. [Explanation of Symbols]

[0059] 1-3…Light-emitting element, 10…Semiconductor structure, 10a…Long side, 10b…Short side, 11…n-side layer, 11a…First region, 11b…Second region, 11c…Third region, 12…Active layer, 13…p-side layer, 20…p-side electrode, 21…First p-side electrode, 22…Second p-side electrode, 23…n-side electrode, 30…Coating film, 31…Sixth opening, 40…Insulating film, 41…First opening Mouth section, 42...Second opening, 43...Third opening, 50...Protective film, 51...Fourth opening, 52...Fifth opening, 61...n-side external connection section, 61a...First side, 61b...Second side, 62...p-side external connection section, 62a...First side, 62b...Second side, 90...Substrate, 100...Light-emitting device, 110...Substrate, 200p...p-side region, 200n...n-side region, C...Corner section

Claims

1. A semiconductor structure having, in a top view, a long side extending in a first direction and a short side extending in a second direction perpendicular to the first direction and shorter than the long side, comprising an n-side layer, a p-side layer, and an active layer located between the n-side layer and the p-side layer, wherein the n-side layer comprises a plurality of first regions exposed from the active layer and the p-side layer, and a second region in which the active layer and the p-side layer are arranged, An insulating film covering the semiconductor structure, having a plurality of first openings located in the first region and a plurality of second openings located on the p-side layer above the second region, Multiple first openings, with n-side electrodes electrically connected to the n-side layer, Multiple p-side electrodes electrically connected to the p-side layer in the aforementioned second openings, A plurality of n-side external connection parts are arranged above the second region and electrically connected to the n-side electrode, A plurality of p-side external connection parts are arranged on the p-side electrode and electrically connected to the p-side electrode, A light-emitting element equipped with, In a top view, the light-emitting element has an n-side region where a plurality of the n-side external connection portions are arranged, and a p-side region adjacent to the n-side region in the first direction where a plurality of the p-side external connection portions are arranged. In a top view, the first region is arranged between a plurality of n-side external connection parts and a plurality of p-side external connection parts. Multiple n-side external connection parts are arranged side by side in the first and second directions, and multiple p-side external connection parts are arranged side by side in the first and second directions. In a top view, the first opening is a light-emitting element located between adjacent n-side external connection parts in the first direction, between adjacent n-side external connection parts in the second direction, between adjacent p-side external connection parts in the first direction, and between adjacent p-side external connection parts in the second direction.

2. In a top view, each of the n-side external connection portion and the p-side external connection portion has a first side extending in the first direction and a second side extending in the second direction that is shorter than the first side. In a top view, the number of first openings positioned between the first sides of the opposing n-side external connection portions is greater than the number of first openings positioned between the second sides of the opposing n-side external connection portions. In a top view, the number of first openings positioned between the first sides of the opposing p-side external connection portions is greater than the number of first openings positioned between the second sides of the opposing p-side external connection portions. The light-emitting element according to claim 1, wherein, in a top view, the area of ​​each of the first openings located between the first sides of the opposing n-side external connection portion, between the second sides of the opposing n-side external connection portion, between the first sides of the opposing p-side external connection portion, and between the second sides of the opposing p-side external connection portion is the same.

3. The light-emitting element according to claim 1 or 2, wherein the length of the longer side is 2 times or more and 5 times or less the length of the shorter side.

4. In a top view, the first opening is located between the n-side external connection portion and the p-side external connection portion, as described in any one of claims 1 to 3.

5. In a top view, the n-side layer has two corners that are separated in the first direction, In a top view, the n-side layer is located at each of the two corners and has a third region exposed from the active layer and the p-side layer. The light-emitting element according to any one of claims 1 to 4, wherein the n-side electrode is electrically connected to the n-side layer in the third region.

6. circuit board and Two light-emitting elements according to claim 5, disposed on the substrate, Equipped with, A light-emitting device arranged on the substrate such that, in the second direction, the corners of the two light-emitting elements, where the third regions of the two light-emitting elements are located, face each other.

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