Processing method and processing apparatus

The method and apparatus address bonding failures and wafer damage by cutting device wafers from the back side with a cutting blade and laser processing with a liquid layer, effectively reducing foreign matter adhesion and damage during hybrid bonding.

JP7864024B2Active Publication Date: 2026-05-22DISCO CORP
View PDF 7 Cites 0 Cited by

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
DISCO CORP
Filing Date
2022-07-01
Publication Date
2026-05-22

AI Technical Summary

Technical Problem

In hybrid bonding of device wafers, foreign matter adherence to the surface after dicing leads to bonding failures, and conventional cutting methods risk damaging the wafer during transport and processing.

Method used

A method and apparatus that involves cutting the device wafer from the back side with a cutting blade to form grooves without reaching the functional layer, followed by laser processing with a wavelength-absorbing beam while maintaining the wafer on a holding table, and using a liquid layer to minimize foreign matter adhesion and damage.

Benefits of technology

Reduces foreign matter adhesion and minimizes wafer damage by integrating cutting and laser processing steps without removing the wafer, enhancing productivity and reducing defects.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 0007864024000001
    Figure 0007864024000001
  • Figure 0007864024000002
    Figure 0007864024000002
  • Figure 0007864024000003
    Figure 0007864024000003
Patent Text Reader

Abstract

To allow a reduction in damage risk of a device wafer and reduce adhesion of a foreign material to a front surface of the device wafer.SOLUTION: A processing method comprises: a holding step 1002 of holding a front surface side of a device wafer by a holding table; a cutting step 1003 of forming a cutting groove which does not reache a function layer by cutting the device wafer with a cutting blade along a street from a back surface side thereof; and a laser processing step 1004 of irradiating the device wafer with a laser beam with a wavelength having an absorptivity from the back surface side of the device wafer along the cutting groove to segment the device wafer into individual devices. After the execution of the cutting step 1003, the laser processing step 1004 is executed in a state of continuously holding the device wafer by the holding table without transporting the device wafer from the holding table.SELECTED DRAWING: Figure 5
Need to check novelty before this filing date? Find Prior Art