Method for thermal stability of HMDSO
The method enhances OLED encapsulation by forming a buffer layer with multiple sublayers using mixed gas plasma in a single chamber, addressing moisture ingress and improving device durability.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2023-07-19
- Publication Date
- 2026-05-22
AI Technical Summary
OLED structures face a limited lifespan due to moisture and oxygen ingress, leading to non-emissive dark spots, necessitating improved encapsulation methods.
A method involving the deposition and curing of multiple sublayers of a buffer layer using mixed gas plasma in a single process chamber, forming a completed buffer layer between two barrier layers to enhance encapsulation.
The method improves encapsulation by reducing delamination and contamination risks, maintaining flexibility and light transmittance, thus extending OLED device lifespan.
Smart Images
Figure 0007864099000001 
Figure 0007864099000002 
Figure 0007864099000003
Abstract
Description
Technical Field
[0001]
[0001] Embodiments of the present disclosure relate generally to methods for forming organic light emitting diode (OLED) devices, and more particularly to methods for encapsulating OLED structures.
Background Art
[0002]
[0002] OLEDs are used in the manufacture of television screens, computer monitors, mobile phones, and other hand-held devices for displaying information. Compared to liquid crystal displays (LCDs) and the like, OLED displays have recently attracted great interest in display applications due to their faster response times, wider viewing angles, higher contrasts, lighter weights, lower power consumption, and improved amenability to flexible substrates.
[0003]
[0003] An OLED structure can have a limited lifespan characterized by a decrease in electroluminescence efficiency and an increase in drive voltage. The main reason for the deterioration of an OLED structure is the formation of non-emissive dark spots due to the ingress of moisture or oxygen. For this reason, an OLED structure is typically encapsulated by an organic layer sandwiched between inorganic layers. The organic layer is used to fill any voids or defects in the first inorganic layer so that the second inorganic layer has a substantially uniform surface or deposition.
[0004]
[0004] Therefore, there is a need for improved methods and apparatus for encapsulating OLED structures.
Summary of the Invention
[0005]
[0005] Embodiments of the present disclosure relate more broadly to methods for forming an OLED device. Forming an OLED device includes depositing a first barrier layer on a substrate on which an OLED structure is placed. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with mixed gas plasma. Curing the first sublayer includes generating water from the mixed gas plasma in a process chamber in which curing is performed. The deposition and curing of the first sublayer are repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.
[0006]
[0006] In one embodiment, a method for forming an OLED device includes depositing a first barrier layer on a region of a substrate on which an OLED structure is placed, depositing a first sublayer of a buffer layer on the first barrier layer, and curing the first sublayer with a mixed gas plasma. Curing the first sublayer includes generating water from the mixed gas plasma in a chamber in which curing is performed. The method further includes repeating the deposition of the first sublayer and the curing of the first sublayer one or more times to form a completed buffer layer, and depositing a second barrier layer on the completed buffer layer.
[0007]
[0007] In another embodiment, a method for forming an OLED device in a reduced-pressure environment of a single process chamber includes depositing a first barrier layer on a region of a substrate on which an OLED structure is placed, and depositing a first sublayer of a buffer layer on the first barrier layer. The first sublayer has a thickness between about 0.05 and 0.2 μm. The method further includes curing the first sublayer with a mixed gas plasma. Curing the first sublayer includes generating water from the mixed gas plasma in a single process chamber where curing is performed. The method further includes repeating the deposition of the first sublayer and the curing of the first sublayer one or more times to form a completed buffer layer. The completed buffer layer has a thickness between about 0.5 and 1.5 μm. The method further includes depositing a second barrier layer on the completed buffer layer.
[0008]
[0008] In yet another embodiment, a method for forming an OLED device in a reduced-pressure environment of a single process chamber includes forming a contact layer on a substrate, forming an OLED structure on the contact layer, depositing a first barrier layer on the OLED structure, depositing a first sublayer of a buffer layer on the first barrier layer, and curing the first sublayer with a mixed gas plasma. Curing the first sublayer includes generating water from a mixed gas plasma in a single process chamber where curing is performed. The method further includes repeating the deposition of the first sublayer and the curing of the first sublayer one or more times to form a completed buffer layer, and depositing a second barrier layer on the completed buffer layer.
[0009]
[0009] In order to provide a detailed understanding of the features of the present disclosure described above, the present disclosure, which has been briefly summarized above, will be described in more detail with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only show exemplary embodiments and should not be considered to limit the scope of the present disclosure, and other equally valid embodiments may also be permitted. [Brief explanation of the drawing]
[0010] [Figure 1]
[0010] This is a schematic cross-sectional view of a PECVD apparatus that may be used to carry out the method described herein according to one embodiment. [Figure 2]
[0011] This is a flowchart of a method for forming an OLED device according to one embodiment. [Figure 3A]
[0012] Figures 3A to 3H show schematic cross-sectional views of an OLED device at various stages of the method shown in Figure 2 according to one embodiment. [Figure 3B] Figures 3A to 3H show schematic cross-sectional views of an OLED device at various stages of the method shown in Figure 2 according to one embodiment. [Figure 3C] Figures 3A to 3H show schematic cross-sectional views of an OLED device at various stages of the method shown in Figure 2 according to one embodiment. [Figure 3D] Figures 3A to 3H show schematic cross-sectional views of an OLED device at various stages of the method shown in Figure 2 according to one embodiment. [Figure 3E] Figures 3A to 3H show schematic cross-sectional views of an OLED device at various stages of the method shown in Figure 2 according to one embodiment. [Figure 3F] Figures 3A to 3H show schematic cross-sectional views of an OLED device at various stages of the method shown in Figure 2 according to one embodiment. [Figure 3G] Figures 3A to 3H show schematic cross-sectional views of an OLED device at various stages of the method shown in Figure 2 according to one embodiment. [Figure 3H] Figures 3A to 3H show schematic cross-sectional views of an OLED device at various stages of the method shown in Figure 2 according to one embodiment. [Modes for carrying out the invention]
[0011]
[0013] To facilitate understanding, the same reference numerals were used where possible to indicate identical elements common to the drawings. Elements and features of one embodiment are considered to be usefully incorporated into other embodiments without further description.
[0012]
[0014] Embodiments of this disclosure relate, in general, to a method for forming an OLED device. Forming an OLED device includes depositing a first barrier layer on a substrate on which an OLED structure is placed. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer includes generating water from the mixed gas plasma in a process chamber in which curing is performed. The deposition and curing of the first sublayer are repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.
[0013]
[0015] Figure 1 is a schematic cross-sectional view of a plasma chemical vapor deposition (PECVD) apparatus 101 that may be used to perform the operations described herein. The PECVD apparatus 101 includes a chamber 100 on which one or more films can be deposited on a substrate 120. The chamber 100 generally includes walls 102, a bottom 104, and a showerhead 106, which together define the process space. The process space may be a reduced-pressure environment. A substrate support 118 is placed within the process space. The process space is accessed through a slit valve opening 108, thereby allowing the substrate 120 to be moved in and out of the chamber 100. To raise and lower the substrate support 118, the substrate support 118 may be coupled to an actuator 116. A lift pin 122 is movably positioned through the substrate support 118 to move the substrate 120 to and from the substrate receiving surface. The substrate support 118 may also include a heating element 124 and / or a cooling element 124 for maintaining the substrate support 118 at a desired temperature. The substrate support 118 may also include an RF return strap 126 to provide an RF return path to the periphery of the substrate support 118.
[0014]
[0016] The shower head 106 is coupled to the backing plate 112 by a fixing mechanism 150. The shower head 106 may be coupled to the backing plate 112 by one or more fixing mechanisms 150, which help to prevent sagging and / or control the straightness / curvature of the shower head 106.
[0015]
[0017] A gas source 132 is coupled to the backing plate 112 and supplies gas to the processing area between the shower head 106 and the substrate 120 through a gas passage in the shower head 106. A vacuum pump 110 is coupled to the chamber 100 to maintain the process space at a desired pressure. An RF source 128 is coupled to the backing plate 112 and / or the shower head 106 via a match network 190 and supplies an RF current to the shower head 106. The RF current generates an electric field between the shower head 106 and the substrate support 118, thereby allowing plasma to be generated from the gas between the shower head 106 and the substrate support 118.
[0016]
[0018] A remote plasma source 130, such as an inductively coupled remote plasma source 130, can also be coupled between the gas source 132 and the backing plate 112. Between substrate processing cycles, a cleaning gas may be supplied to the remote plasma source 130, thereby generating a remote plasma. Radicals from the remote plasma may be supplied to the chamber 100 to clean the chamber's components. The cleaning gas may be further excited by an RF source 128 and supplied to the showerhead 106.
[0017]
[0019] The shower head 106 may be further coupled to the backing plate 112 by a shower head suspension 134. In one embodiment, the shower head suspension 134 is a flexible metal skirt. The shower head suspension 134 may have a lip portion 136 on which the shower head 106 can be placed. The backing plate 112 may be placed on the upper surface of a shelf 114 coupled to the chamber wall 102, sealing the chamber 100 and creating a reduced pressure environment.
[0018]
[0020] FIG. 2 is a flowchart of a method 200 for forming an OLED device according to an embodiment. FIGS. 3A-3H show schematic cross-sectional views of an OLED device 350 during various stages of the method 200 of FIG. 2. FIGS. 3B-3F show enlarged cross-sectional views of FIG. 3A. The method 200 can be utilized with the PECVD apparatus 101 of FIG. 1. The method 200 begins at operation 202 by providing a substrate 300 having a pre-formed OLED structure 304 disposed thereon. The substrate 300 may be the substrate 120 of FIG. 1. The substrate 300 may have a contact layer 302 disposed thereon, and the OLED structure 304 is disposed on the contact layer 302 as shown in FIG. 3A.
[0019]
[0021] At operation 204, as shown in FIG. 3A, a mask 310 is aligned over the substrate 300 such that the OLED structure 304 is exposed through an opening 312 not protected by the mask 310. The mask 310 is arranged such that a portion 306 of the contact layer 302 adjacent to the OLED structure 304 is covered by the mask 310, thereby preventing any material subsequently deposited from depositing on the portion 306. The portion 306 of the contact layer 302 is an electrical contact for the OLED device 350 and thus no material should be deposited thereon. The mask 310 can be made of a metallic material such as INVAR (registered trademark).
[0020]
[0022] In operation 206, as shown in FIG. 3A, a first barrier layer 308 is deposited on the substrate 300. The first barrier layer 308 has a first portion 308a and a second portion 308b. The first portion 308a of the first barrier layer 308 is deposited through an opening 312 onto a region of the substrate 300 that is exposed by a mask 310 and includes a portion of the OLED structure 304 and the contact layer 302. The second portion 308b of the first barrier layer 308 is deposited on the mask 310 that covers a second region of the substrate 300 that includes the portion 306 of the contact layer 302. The first barrier layer 308 is a dielectric layer such as silicon nitride (SiN), silicon oxynitride (SiON), silicon dioxide (SiO2), aluminum oxide (Al2O3), aluminum nitride (AlN), or other suitable dielectric layer. The first barrier layer 308 may be deposited by a suitable deposition technique such as chemical vapor deposition (CVD), PECVD, physical vapor deposition (PVD), spin coating, or other suitable techniques.
[0021]
[0023] In operation 208, after the first barrier layer 308 is deposited on the substrate 300, as shown in FIG. 3B, a first sub-layer 320 of the partial buffer layer 316 is deposited on the first barrier layer 308. The first sub-layer 320 of the partial buffer layer 316 may have a thickness 322 of about 0.05 - 0.2 μm. The first sub-layer 320 of the partial buffer layer 316 may be deposited onto the substrate 300 through the opening 312 of the mask 310 over a region of the substrate 300 that is exposed by the mask 310 and covers the first portion 308a of the first barrier layer 308. Although not shown in the enlarged cross-sectional view shown in FIG. 3B, the first sub-layer 320 of the partial buffer layer 316 is deposited over the second portion 308b of the first barrier layer 308.
[0022]
[0024] The partial buffer layer 316 may be fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO:F) deposited in a PECVD chamber such as chamber 100 in Figure 1. The deposition of the pp-HMDSO:F layer is achieved by flowing one or more fluorine-containing gases and HMDSO gas together with O2 or N2O gas. The fluorine-containing gases may be nitrogen fluoride (NF3), silicon fluoride (SiF4), fluorine gas (F2), carbon tetrafluoride (CF4), or any combination thereof. The fluorine-doped plasma-polymerized HMDSO layer has excellent particle coating performance and surface planarization effect. The resulting first sublayer 320 has a fluorine content of less than 10 atomic percent.
[0023]
[0025] During the deposition of pp-HMDSO:F, the flow rate ratio of the fluorine-containing gas to the HMDSO gas may be between approximately 0.25 and approximately 1.5. Too much fluorine may cause carbon to be extracted from the HMDSO. In one embodiment, PECVD of pp-HMDSO:F is carried out under the following conditions: SiF4 has a flow rate of 125 standard cubic centimeters / min (sccm) and HMDSO has a flow rate of 300 sccm. In other words, the ratio of SiF4 to HMDSO is between approximately 0.40 and approximately 0.45. The plasma is generated at 700 W and the chamber pressure is approximately 1800 mTorr. pp-HMDSO:F is deposited at approximately 80 degrees Celsius, and the distance between the substrate 300 and the showerhead 106 is between approximately 500 and 1200 mils.
[0024]
[0026] The buffer layer 316 containing pp-HMDSO:F can have properties including stress relaxation, particle conformality, and flexibility. These properties of the pp-HMDSO:F buffer layer 316 enable the buffer layer 316 containing pp-HMDSO:F to isolate defects in the first barrier layer 308 and to planarize surface irregularities to form a smooth surface. However, the formation process of the pp-HMDSO:F buffer layer can make it physically soft, which imposes integration issues when it is laminated with the barrier layer. When the barrier layer is stacked on top of a soft pp-HMDSO:F buffer layer, a wrinkled surface is formed, and the soft pp-HMDSO:F layer loses its light transmittance, making the device unsuitable as a top-emission OLED device.
[0025]
[0027] Plasma curing of the partial buffer layer 316 is used to cure the partial buffer layer 316 and prevent the formation of a wrinkled surface. In operation 210, as shown in Figure 3C, the first sublayer 320 of the partial buffer layer 316 is cured to form the first cured sublayer 324 of the partial buffer layer 316.
[0026]
[0028] The curing of the partial buffer layer 316 is carried out under reduced pressure. In one embodiment, the curing is performed in the same process chamber as the deposition of the first sublayer 320 of the buffer layer (i.e., an in-situ curing process). The curing is carried out using a mixed gas plasma, or a plasma generated from a gaseous mixture configured to generate water (H2O) in the chamber in which the curing is performed. The mixed gas plasma is configured to generate water for condensation curing, thereby introducing moisture into the chamber. The mixed gas plasma may contain two or more gases selected from the group of ammonia (NH3), nitrous oxide (N2O), hydrogen (H2), and oxygen (O2). For example, the mixed gas plasma may contain NH3 and N2O, H2 and N2O, H2 and O2, or NH3 and O2. In one embodiment, the mixed gas plasma may further contain fluorine such as nitrogen fluoride (NF3), silicon fluoride (SiF4), fluorine gas (F2), and / or carbon tetrafluoride (CF4).
[0027]
[0029] The ratio of the mixed gases in the mixed gas plasma depends on the distance between the substrate 300 and the showerhead of the processing chamber, such as the showerhead 106 in Figure 1. For example, if the distance between the substrate 300 and the showerhead 106 is about 650 mils, a 1:1 ratio of NH3 to N2O may be used for a curing duration of about 10-15 seconds. In another embodiment, if the distance between the substrate 300 and the showerhead 106 is about 1000 mils, a 3:1 ratio of NH3 to N2O may be used for a curing duration of about 30 seconds. Thus, the curing time depends on the ratio of the mixed gases in the mixed gas plasma and the distance between the substrate 300 and the showerhead 106. Therefore, the curing time may be increased to compensate for a higher ratio of the mixed gases in the mixed gas plasma and to compensate for a larger distance between the substrate 300 and the showerhead 106. The first cured sublayer 324 maintains its flexibility and light transmittance when one or more sublayers and barrier layers of the buffer layer are subsequently deposited on it.
[0028]
[0030] In operation 212, operations 208 and 210 are repeated one or more times to deposit one or more further sublayers of the partial buffer layer 316 on the first cured sublayer 324, and each deposited sublayer is cured individually before depositing the further sublayers. For example, as shown in Figure 3D, a second sublayer 326 of the partial buffer layer 316 is deposited on the first cured sublayer 324, covering the first cured sublayer 324. The second sublayer 326 of the partial buffer layer 316 may have a thickness 330 of about 0.05 to 0.2 μm. The first thickness 322 of the first sublayer 320 and the second thickness 330 of the second sublayer 326 may be the same, or they may be different. Although not shown in the enlarged cross-sectional view in Figure 3D, the second sublayer 326 of the partial buffer layer 316 is deposited on top of the second portion 308b of the first barrier layer 308, which is placed on the mask 310.
[0029]
[0031] Next, as shown in Figure 3E, the second sublayer 326 of the partial buffer layer 316 is cured to form the second cured sublayer 328 of the partial buffer layer 316. Then, as shown in Figure 3F, one or more further sublayers 336 of the partial buffer layer 316 can be deposited and cured individually, one sublayer at a time, to form the completed buffer layer 332. Each time a further sublayer 336 is deposited, it is cured before another further sublayer 336 is deposited. Unless otherwise specified, further sublayers 336 are deposited only on cured sublayers. Each further sublayer 336 maintains its flexibility and light transmittance when one or more further sublayers are subsequently deposited on it.
[0030]
[0032] The completed buffer layer 332 may have a thickness 334 of approximately 0.5 to 1.5 μm. In one embodiment, 1 to 15 further sublayers 336 can be deposited on the first cured sublayer 324 to form the completed buffer layer 332. In another embodiment, the completed buffer layer 332 includes 10 sublayers, each having a thickness of approximately 0.1 μm. The completed buffer layer 332 maintains its flexibility and light transmittance when a barrier layer is subsequently deposited on it.
[0031]
[0033] Figure 3G shows a reduced view of the completed buffer layer 332 deposited on the OLED device 350. As shown in Figure 3G, the completed buffer layer 332 includes a first portion 332a and a second portion 332b. The first portion 332a of the completed buffer layer 332 is deposited on the first portion 308a of the first barrier layer 308, and the second portion 332b of the completed buffer layer 332 is deposited on the second portion 308b of the first barrier layer 308.
[0032]
[0034] In operation 214, as shown in Figure 3H, a second barrier layer 314 is deposited on the substrate 300, covering the completed buffer layer 332 and the first barrier layer 308 formed on the OLED structure 304. The second barrier layer 314 includes a first portion 314a deposited on the first portion 332a of the completed buffer layer 332, and a second portion 314b deposited on the second portion 332b of the completed buffer layer 332.
[0033]
[0035] The second barrier layer 314 may be a dielectric layer similar to the first barrier layer 308. The second barrier layer 314 is a dielectric layer such as SiN, SiON, SiO2, or other suitable dielectric layer. The second barrier layer 314 can be deposited by a suitable deposition technique such as CVD, PVD, spin coating, or other suitable technique.
[0034]
[0036] The deposition of the barrier layer, the deposition of the buffer layer sublayer, and the curing of the buffer layer sublayer as described herein may be performed in a reduced-pressure environment in a single deposition chamber, such as PECVD chamber 100. Performing the deposition and curing operations in a reduced-pressure environment in a single deposition chamber makes it possible to form an OLED device without breaking the reduced pressure, thereby eliminating or reducing delamination between various layers and further eliminating or reducing the risk of introducing contaminants into the process chamber.
[0035]
[0037] Purging the process chamber may be performed between cycles to further minimize the risk of contamination. In one embodiment, a first barrier layer is deposited. The chamber is then purged, and the gas used for depositing the first barrier layer is no longer present in the chamber for subsequent steps. Next, each of the multiple sublayers of the buffer layer is deposited and cured individually. The chamber is then purged again, and the gas used for depositing and curing the multiple sublayers of the buffer layer is no longer present in the chamber for subsequent steps. In one embodiment, the chamber can be purged each time a sublayer of the buffer layer is deposited, before curing the sublayer. In such an embodiment, the chamber can then be purged once more before curing the sublayer and depositing further sublayers of the buffer layer. Thus, the chamber can be purged each time a sublayer is deposited, and again each time a sublayer is cured. Finally, a second barrier layer is deposited. A single-chamber process can be advantageous in that it reduces cycle time as well as the number of chambers (and equipment costs) compared to using a multi-chamber process.
[0036]
[0038] In summary, an OLED device is formed having a buffer layer containing multiple sublayers sandwiched between two barrier layers. Each sublayer of the buffer layer is deposited and cured individually before further sublayers are deposited, reducing or eliminating delamination between the various layers of the OLED device. Furthermore, the sublayers of the buffer layer are deposited and cured in a reduced-pressure environment within a single process chamber. Performing the deposition and curing operations in a reduced-pressure environment within a single deposition chamber makes it possible to form the OLED device without breaking the pressure, thereby further eliminating or reducing delamination between the various layers. Furthermore, the risk of introducing contaminants into the process chamber is eliminated or reduced, thereby allowing the completed buffer layer to maintain its flexibility and light transmittance. Moreover, performing the deposition and curing operations in a reduced-pressure environment within a single deposition chamber simplifies the method of forming the OLED device, potentially increasing the processing capacity and reducing associated costs.
[0037]
[0039] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the following claims.
Claims
1. Organic light-emitting diode (OLED) device, OLED structure, A first barrier layer is arranged around the OLED structure, A buffer layer disposed on the first barrier layer, wherein the buffer layer comprises a plurality of sublayers, each of which is a distinct individual cured sublayer containing fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO:F), An organic light-emitting diode (OLED) device equipped with [the specified feature].
2. The OLED device according to claim 1, wherein the plurality of sublayers are 2 to 16 sublayers.
3. The buffer layer further includes a second barrier layer disposed on top of the buffer layer, wherein at least one of the first barrier layer and the second barrier layer is SiN, SiO, or SiO ２ Al ２ O ３ The OLED device according to claim 1, comprising AlN.
4. The OLED device according to claim 1, wherein each of the plurality of sublayers has a thickness of 0.05 μm to 0.2 μm.
5. The OLED device according to claim 1, wherein the buffer layer has a thickness of 0.5 μm to 1.5 μm.
6. The OLED device according to claim 1, wherein the buffer layer is disposed on top of the first barrier layer.
7. Organic light-emitting diode (OLED) device, OLED structure, A first barrier layer is arranged around the OLED structure, A buffer layer disposed on the first barrier layer, wherein the buffer layer comprises a plurality of sublayers, each of which is a distinct individual cured sublayer containing fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO:F), and each of which has a thickness of 0.05 μm to 0.2 μm, and the buffer layer, A second barrier layer is placed on the buffer layer, An organic light-emitting diode (OLED) device equipped with [the specified feature].
8. The OLED device according to claim 7, wherein the buffer layer has a thickness of 0.5 μm to 1.5 μm.
9. The OLED device according to claim 7, wherein the plurality of sublayers are 2 to 16 sublayers.
10. At least one of the first barrier layer and the second barrier layer is made of SiN, SiO, or SiO ２ Al ２ O ３ The OLED device according to claim 7, comprising AlN.
11. The OLED device according to claim 7, wherein the buffer layer is disposed on the first barrier layer.
12. Organic light-emitting diode (OLED) device, A contact layer placed on the substrate, An OLED structure disposed on the aforementioned contact layer, A first barrier layer disposed on the OLED structure, A buffer layer disposed on the first barrier layer, wherein the buffer layer comprises a plurality of sublayers, each of which is a distinct individual cured sublayer containing fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO:F), and the buffer layer has a thickness of 0.5 μm to 1.5 μm. A second barrier layer is placed on the buffer layer, An organic light-emitting diode (OLED) device equipped with [the specified feature].
13. The OLED device according to claim 12, wherein each of the plurality of sublayers has a thickness of 0.05 μm to 0.2 μm.
14. The OLED device according to claim 12, wherein the plurality of sublayers are 2 to 16 sublayers.
15. At least one of the first barrier layer and the second barrier layer is SiN, SiON, SiO ２ , Al ２ O ３ , or AlN, and the OLED device according to claim 12.
16. The OLED device according to claim 12, wherein the buffer layer is disposed on top of the first barrier layer.