Indication device
The use of photolithography and sacrificial layers to form island-shaped units with side walls addresses manufacturing challenges, enabling high-definition, high-resolution, and multifunctional displays with improved reliability and reduced costs.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Filing Date
- 2022-02-07
- Publication Date
- 2026-05-22
AI Technical Summary
Existing display devices face challenges in achieving high-definition, high-resolution, large-sized, and multifunctional displays due to issues with manufacturing methods like vacuum evaporation using metal masks, which result in low yield, high cost, and potential for crosstalk and thickness variations in light-emitting layers.
A method involving photolithography and sacrificial layers to form island-shaped light-emitting and light-receiving units, with side walls to prevent short circuits and uniform layer thickness, allowing for high-resolution and high-aperture ratio displays.
Enables the production of high-definition, high-resolution, large-sized, and multifunctional displays with improved reliability and reduced manufacturing costs, while minimizing damage to light-emitting and light-receiving units.
Smart Images

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