Transfer method
The transfer method addresses misalignment issues by securely holding elements on the target substrate through a controlled blistering process, ensuring precise and efficient transfer of semiconductor chips.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- TORAY ENG CO LTD
- Filing Date
- 2022-12-09
- Publication Date
- 2026-05-26
AI Technical Summary
Existing transfer methods for semiconductor chips face misalignment issues due to the blistering layer remaining attached to the elements after transfer, causing them to shift during relative movement between substrates.
A transfer method involving a transfer preparation step, transfer step, substrate separation step, alignment direction movement step, and substrate approach step, which includes forming blisters on the transfer substrate to securely hold elements on the target substrate before and during alignment, ensuring complete separation from the blistering layer.
Enables precise transfer of elements to the correct position on the target substrate, reducing misalignment and accelerating the transfer process by initiating substrate separation before alignment, thus maintaining positional accuracy.
Smart Images
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Abstract
Description
Technical Field
[0005]
[0001] The present invention relates to a transfer method for irradiating a transfer substrate with light energy and transferring an element to a transfer target substrate using blistering.
Background Art
[0002] In recent years, semiconductor chips have been miniaturized for cost reduction, and efforts have been made to mount these miniaturized semiconductor chips with high precision. In mounting this miniaturized chip at high speed, ablation is caused by irradiating a laser onto the bonding surface of the chip bonded to the transfer substrate with the transfer substrate, and the chip is peeled off from the transfer substrate, energized, and transferred to the transfer target substrate. A so-called laser lift-off method is adopted.
[0003] Patent Document 1 discloses a technique for ablating a blistering layer by irradiating a laser beam onto a blistering layer provided on a transfer substrate and having an adhesive layer on the surface side. In this blistering layer, blisters (swellings) are generated by ablation, and the article (element) adhered to the adhesive layer is pushed out by the generation of these blisters, thereby separating the article from the transfer substrate.
Prior Art Documents
Patent Documents
[0004] <000However, in the element transfer method shown in Patent Document 1, when transferring multiple elements from a transfer substrate to a substrate to be transferred, there was a risk that the elements transferred to the substrate to be transferred would be misaligned if the spacing between the elements was changed during the transfer. Specifically, as shown in Figure 10(a), when a laser beam 111 is irradiated onto the blistering layer 124 of the transfer substrate 122 to create a blister 130 and transfer the element 121 to the substrate to be transferred 123, depending on the size of the blister 130, as shown in Figure 10(b), the blistering layer 124 may remain attached to the element 121 even after the entire element 121 has been transferred to the catch layer 125 on the substrate to be transferred 123, until the blister 130 deflates. Here, if the adhesive force of the catch layer 125 was not sufficiently greater than the adhesive force of the blistering layer 124, when the transfer substrate 122 and the substrate to be transferred 123 were moved relative to each other in order to change the spacing between the elements, a problem arose where the elements 121 were pulled by the blistering layer 124 to which they were still attached, causing misalignment, as shown in Figure 10(c).
[0006] In view of the above-mentioned problems, the present invention aims to provide a transfer method that enables the transfer of an element from a transfer substrate to a precise position on a transfer substrate during blistering transfer of an element. [Means for solving the problem]
[0007] To solve the above problems, the present invention provides a transfer method for transferring elements arranged on a transfer substrate to a substrate to be transferred, characterized by comprising: a transfer preparation step of facing the transfer substrate and the substrate to be transferred so as to sandwich the predetermined elements, with the transfer substrate holding the predetermined elements, such that the distance between the transfer substrate and the substrate to be transferred becomes a first distance; a transfer step of bringing the predetermined elements and the substrate to be transferred closer together by causing a blister on the transfer substrate near the holding position of the predetermined elements, thereby holding the predetermined elements on the substrate to be transferred; a substrate separation step of widening the distance between the transfer substrate and the substrate to be transferred to a second distance greater than the first distance; an alignment direction movement step of relatively moving the transfer substrate and the substrate to be transferred in the alignment direction of the elements on the transfer substrate; and a substrate approach step of returning the distance between the transfer substrate and the substrate to the first distance.
[0008] According to the transfer method of the present invention, by performing a substrate separation step before the alignment direction movement step, it is possible to prevent the elements transferred to the substrate from being pulled by the transfer substrate and shifting position during the alignment direction movement step.
[0009] Furthermore, in the transfer process, a portion of the predetermined element is initially held on the substrate to be transferred, and then the portion held on the substrate gradually increases until the entire predetermined element is eventually held on the substrate. The substrate separation process is preferably started before the entire predetermined element is held on the substrate in the transfer process.
[0010] This reduces the time required to transfer a single element. [Effects of the Invention]
[0011] The transfer method of the present invention makes it possible to transfer an element from a transfer substrate to a precise position on the substrate to be transferred during element transfer by blistering. [Brief explanation of the drawing]
[0012] [Figure 1] This figure illustrates a transfer apparatus for carrying out the transfer method of the present invention. [Figure 2] This figure shows the transfer substrate and the substrate to be transferred before the transfer of the element in the present invention. [Figure 3] This diagram illustrates the transfer process in one embodiment of the present invention. [Figure 4] This figure shows the transfer substrate and the substrate to be transferred after a predetermined time has elapsed following irradiation with active energy rays. [Figure 5] This figure illustrates the transfer process in another embodiment of the present invention. [Figure 6] This figure illustrates the process of change in blister shape during the transfer process shown in Figure 5. [Figure 7] This is a flowchart illustrating the operation of the transfer method in one embodiment of the present invention. [Figure 8] This diagram illustrates the transfer method in one embodiment of the present invention. [Figure 9] This figure illustrates the transfer process in another embodiment of the present invention. [Figure 10] This diagram illustrates an example of a failure in transferring elements using a conventional transfer method. [Modes for carrying out the invention]
[0013] A transfer apparatus for carrying out the transfer method of the present invention will be described with reference to Figures 1 and 2. Figure 1 is a diagram illustrating a transfer apparatus in one embodiment of the present invention, and Figure 2 is a diagram showing the transfer substrate and the substrate to be transferred before the transfer of the element in the present invention, where Figure 2(a) is a front view and Figure 2(b) is a view taken along arrow AA in Figure 2(a).
[0014] The transfer device 10 includes a laser irradiation unit 12 that irradiates a laser beam 11, a transfer substrate gripping unit 13 that holds the transfer substrate 22 and is movable at least in the X-axis direction and the Y-axis direction, a transfer substrate gripping unit 14 that holds the transfer substrate 23 so as to face the transfer substrate 22 with a gap therebetween and is located below the transfer substrate gripping unit 13, and a control unit (not shown). By irradiating the laser beam 11 onto the transfer substrate 22, ablation is caused on the transfer substrate, and the element 21 is transferred from the transfer substrate 22 to the transfer substrate 23.
[0015] The laser irradiation unit 12 is an embodiment of the energy irradiation unit in the present invention. It is a device that irradiates a laser beam 11 such as an excimer laser which is an active energy ray, and is fixedly provided to the transfer device 10. In this embodiment, the laser irradiation unit 12 irradiates a spot-shaped laser beam 11, and the irradiation positions of the laser beam 11 in the X-axis direction and the Y-axis direction are controlled via a galvanometer mirror 15 and an fθ lens 16 whose angles are adjusted by the control unit, and the laser beam 11 is selectively irradiated onto a plurality of elements 21 arranged on the transfer substrate 22 held by the transfer substrate gripping unit 13. When the laser beam 11 enters near the element 21 through the transfer substrate 22, ablation occurs due to the application of active energy (light energy) between the transfer substrate 22 and the element 21. By this ablation, the element 21 is biased, and the element 21 is transferred from the transfer substrate 22 to the transfer substrate 23. In this description, the element 21 is, for example, a semiconductor chip.
[0016] The transfer substrate gripping unit 13 has an opening and adsorbs and grips the vicinity of the outer peripheral portion of the transfer substrate 22. The laser beam 11 emitted from the laser irradiation unit 12 can be applied to the transfer substrate 22 held by the transfer substrate gripping unit 13 through this opening.
[0017] The transfer substrate 22 is a substrate made of materials such as glass and is capable of transmitting the laser beam 11. It holds the element 21 on the lower surface side. Also, as shown in Fig. 2(a), a blistering layer 24 is formed on the surface of the transfer substrate 22 that holds the element 21, and the surface of this blistering layer 24 has adhesiveness. The adhesive force on the surface of this blistering layer 24 becomes the holding force of the element 21, and the element 21 is adhesively held.
[0018] Further, the transfer substrate gripping part 13 relatively moves with respect to the transfer substrate gripping part 14 at least in the X-axis direction and the Y-axis direction by a moving mechanism not shown. A control part not shown controls this moving mechanism, and by adjusting the position of the transfer substrate gripping part 13, the relative position of the element 21 held on the transfer substrate 22 with respect to the transfer substrate 23 can be adjusted.
[0019] The transfer substrate gripping part 14 has a flat surface on the upper surface, and during the transfer process of the element 21, it grips the transfer substrate 23 such that the blistering layer 24 of the transfer substrate 22, the element 21 held by the blistering layer 24, and the transfer surface of the transfer substrate 23 face each other. A plurality of suction holes are provided on the upper surface of this transfer substrate gripping part 14, and the back surface of the transfer substrate 23 (the surface on which the element 21 is not transferred) is gripped by the suction force.
[0020] Here, the transfer substrate 23 in the present embodiment is a substrate made of materials such as glass, and as shown in Fig. 2(a), a catch layer 25 having adhesiveness is provided on the transfer surface (the surface on the side that receives the element 21), and the element 21 transferred from the transfer substrate 22 is adhesively held.
[0021] Also, the transfer substrate gripping part 14 relatively moves with respect to the transfer substrate gripping part 13 at least in the Z-axis direction by a moving mechanism not shown. A control part not shown controls this moving mechanism, and by adjusting the position of the transfer substrate gripping part 14, the interval (gap) between the transfer substrate 22 gripped by the transfer substrate gripping part 13 and the transfer substrate 23 gripped by the transfer substrate gripping part 14 can be adjusted.
[0022] In this embodiment, the transfer substrate gripping portion 13 moves in the X-axis and Y-axis directions, causing the transfer substrate gripping portion 13 and the substrate to be transferred gripping portion 14 to move relative to each other in the XY direction. However, if the dimensions of the substrate to be transferred 23 are large and the entire surface of the substrate to be transferred 23 cannot be positioned directly below the irradiation range of the laser beam 11, the substrate to be transferred gripping portion 14 may also be provided with a mechanism for movement in the X-axis and Y-axis directions.
[0023] In the transfer apparatus 10 having the above configuration, when the transfer substrate 22 and the substrate to be transferred 23 are facing each other with the element 21 in between, laser light 11 is irradiated from the transfer substrate 22 toward the element 21, and when the laser light 11 is irradiated onto the blistering layer 24, a part of the material of the blistering layer 24 is decomposed by the energy of the laser light 11, and gas is generated. Due to this decomposition of the material of the blistering layer 24 and the generation of gas, a blister (bubble) 30 is generated inside the blistering layer 24 or between the glass surface 22a of the transfer substrate 22 and the blistering layer 24, as shown in Figure 1. In this explanation, the phenomenon in which such a blister 30 is generated is called blistering. Also, in this explanation, the region in the blistering layer 24 that holds the element 21, as shown by double-line hatching in Figure 2(b), is called the element holding region 24a.
[0024] An embodiment of the transfer process, which is one step in the transfer method using the transfer apparatus of the present invention, will be explained with reference to Figure 3. Figure 3(a) shows the state of the blistering layer from the same viewpoint as in the view indicated by the arrow in Figure 2(a), and Figure 3(b) is a front view including the transfer substrate 22 and the substrate to be transferred 23.
[0025] As shown in Figure 3(a), when the laser beam 11, which is an active energy ray, is irradiated onto point C in the element holding region 24a of the blistering layer 24, blistering occurs in a part of the element holding region 24a centered on point C, and a blister 30 is formed.
[0026] Thus, the distance from the glass surface 22a to the surface of the adhesive blistering layer 24 in the area where blistering occurs is greater than the distance from the glass surface 22a to the surface of the blistering layer 24 in the area before blistering occurs. Therefore, when blistering occurs in the blistering layer 24 in the element holding region 24a, the element 21 remains held on the surface portion of the blistering layer 24 while moving away from the glass surface 22a of the transfer substrate 22.
[0027] In this transfer process, the substrate to be transferred 23 is provided opposite the element 21 with a predetermined distance between them, and due to the occurrence of blistering, the element 21 approaches the catch layer 25 of the substrate to be transferred 23 while being held on the surface portion of the blistering layer 24.
[0028] In this embodiment, only one blister 30 is formed within the element holding region 24a, and the center of the blister 30 is located in the peripheral area, which is not at the center of the element holding region 24a (the dashed-dotted line in Figures 3(a) and 3(b)). As a result, as the element 21 separates from the transfer substrate 22 while being held by the blistering layer 24, the tilt of the element 21 relative to the transfer substrate 22 changes as it separates, as shown in Figure 3(b). When the element 21 has a tilt relative to the transfer substrate 22 in this way, there is a portion P that is relatively close to the transfer substrate 22 and a portion Q that is relatively far from the transfer substrate 22. Compared to the case where the blister 30 is formed in the center of the element holding region 24a and the element 21 separates while remaining parallel to the transfer substrate 22, portion Q is located even further away from the transfer substrate 22. Therefore, portion Q reaches the catch layer 25 of the transfer substrate 23 first.
[0029] When a portion Q of element 21 comes into contact with the catch layer 25 first, at least a part of element 21 is held adhesively to the catch layer 25. Here, if the adhesive holding force of element 21 by the catch layer 25 is greater than the adhesive holding force of element 21 by the blistering layer 24, the catch layer 25 and the blistering layer 24 will separate and pull on element 21, causing the blistering layer 24 to peel off from element 21, and the catch layer 25 to hold the entire surface of element 21. In other words, the transfer of element 21 from the transfer substrate 22 to the substrate to be transferred 23 is completed.
[0030] In the present invention, in which the blistering layer 24 is in contact with the catch layer 25 while holding the element 21, that is, in a configuration where the element 21 is always held by something while being transferred from the transfer substrate 22 to the substrate to be transferred 23, the transfer is performed with less influence from air resistance and with better positional accuracy compared to the conventional laser lift-off method in which the element is separated from the transfer substrate once and falls onto the substrate to be transferred.
[0031] Next, Figure 4 shows the transfer substrate and the substrate to be transferred after irradiation with active energy rays as shown in Figure 3, and after a predetermined time has elapsed.
[0032] When the gas that forms the blister 30 due to irradiation with active energy rays shrinks as the temperature of the blister 30 decreases, or diffuses into the blistering layer 24, the blister 30 may tend to shrink. As the blister 30 shrinks in this way, the blistering layer 24 naturally peels off from the element 21 that is in contact with the catch layer 25, and the transfer of the element 21 is completed.
[0033] Next, the transfer process in another embodiment of the present invention will be described with reference to Figure 5. Figure 5(a) shows the state of the blistering layer from the same viewpoint as in the view indicated by the arrow in Figure 2(a), and Figure 5(b) is a front view including the transfer substrate and the substrate to be transferred. Furthermore, the process of change in the blister shape during this transfer process will be explained with reference to Figure 6.
[0034] In this embodiment, laser light 11 is irradiated at two locations within the element holding region 24a, forming two blisters (large blister 30a and small blister 30b), each with a different volume. Blisters with different volumes can be formed by varying the power of the laser light 11 and the number of irradiations required to form each blister. In this embodiment, the blisters are formed in order from the smallest volume.
[0035] Thus, at least two blisters with different volumes, i.e., different heights from the glass surface 22a, separate the element 21 from the glass surface 22a so that it is tilted relative to the transfer substrate 22, and this separated state can be stably maintained compared to the case where there are fewer blisters.
[0036] Furthermore, in this embodiment, when a large blister 30a and a small blister 30b with different volumes are formed within the element holding region 24a, the small blister 30b is formed first, and in the state where the element 21 is tilted by the small blister 30b, the large blister 30a is formed at a position where the distance between the transfer substrate 22 and the element 21 is smaller than the formation position of the small blister 30b, as shown in Figure 5(b). By doing this, a part of the element 21 is peeled off from the blistering layer 24 by the formation of the small blister 30b before a large tilt is formed by the large blister 30a, so the load on the element 21 when the large blister 30a is formed can be reduced.
[0037] Furthermore, in this embodiment, the large blister 30a and the small blister 30b are formed to communicate with each other. Here, for example, if the openings of two balloons inflated to different sizes are connected, the internal pressure of the smaller balloon is higher than that of the larger balloon. Therefore, the smaller balloon behaves to become smaller, and the gas inside the balloon moves towards the larger balloon, causing the larger balloon to become even larger. In this embodiment, the large blister 30a and the small blister 30b, which are connected to each other as described above, exhibit the same behavior as the two balloons. As shown in the transition from Figure 6(a) to Figure 6(b), the gas in the small blister 30b moves into the large blister 30a, causing the small blister 30b to become even smaller and the large blister 30a to become even larger.
[0038] As the large blister 30a becomes larger in this way, it expands in the direction of the transfer substrate 23, and as shown in Figure 6(b), the height dimension of the large blister 30a changes from H1 to H1+ΔH. Consequently, the tilt of the element 21 increases further, and a configuration is formed in which at least a part of the element 21 contacts the catch layer 25, as shown by portion Q in Figure 6(b). Therefore, the element 21 can reach the catch layer 25 more reliably than when only the large blister 30a is formed.
[0039] Next, the operation flow of the transfer method in one embodiment of the present invention will be explained with reference to Figure 7.
[0040] In the transfer method of this embodiment, laser light 11 is emitted from the laser light source 12 at the timing when the laser irradiation trigger pulse is turned on. Figure 7 shows the flow for transferring one element 21, and the laser irradiation trigger pulse is turned on multiple times, which indicates that the element holding region 24a (see Figure 2) of one element 21 is irradiated with laser light 11 multiple times. Through this multiple irradiation with laser light 11, multiple blisters 30 may be formed, or one large blister 30 may be formed.
[0041] Furthermore, according to this operation flow, the movement of the substrate gripping part 14 from the raised position to the lowered position begins during the irradiation of multiple laser beams 11. In other words, the movement of the substrate gripping part 14 begins during the transfer process of the element 21 by irradiation of the laser beam 11.
[0042] Furthermore, according to this operation flow, there is a short delay after the last laser beam 11 is irradiated before the transfer substrate gripping part 14 begins to move from its lowered position to its raised position. This indicates that the movement of the transfer substrate gripping part 14 begins after the irradiation of the laser beam 11 is complete and the blister 30 begins to deflat.
[0043] Next, a transfer method in one embodiment of the present invention, based on the operation flow shown in Figure 7, will be explained using Figure 8.
[0044] First, as shown in Figure 8(a), the transfer substrate 22 and the substrate to be transferred 23 are positioned facing each other so that the distance between the transfer substrate 22 and the substrate to be transferred 23 becomes a first distance d1, with the transfer substrate 22 holding the element 21. In this explanation, this step is referred to as the transfer preparation step.
[0045] In this invention, as described above, the blistering layer 24 deforms, so when referring to the distance between the transfer substrate 22 and the substrate to be transferred 23, the distance between the two substrates will be defined as the distance between the main body of the transfer substrate 22 and the substrate to be transferred 23, as shown in Figure 8(a).
[0046] Next, as shown in Figure 8(a), a laser beam 11 is irradiated near a predetermined element 21 to create a blister 30 in the blistering layer 24, thereby bringing the element 21 closer to the transfer substrate 23 and holding it in place on the transfer substrate 23. This process is called the transfer process, as described above.
[0047] Next, as shown in Figure 8(b), the transfer substrate 23 descends as the transfer substrate gripping portion 14 descends, thereby creating a second distance d2 between the two substrates that is greater than the first distance d1. This completely separates the element 21 from the blistering layer 24 where the blister 30 has formed. In this explanation, this step is referred to as the substrate separation step.
[0048] In this embodiment, as shown in Figure 8(a), a portion of the element 21 is initially held by the transfer substrate 23 (catch layer 25). Subsequently, the portion held by the transfer substrate 23 gradually increases until the entire element 21 is eventually held by the transfer substrate 23. However, in this embodiment, as shown in Figure 7, the substrate separation process begins during the transfer process. That is, the substrate separation process begins before the entire element 21 is held by the transfer substrate 23 during the transfer process.
[0049] Even if the entire element 21 is not held by the substrate 23 at the start of the substrate separation process, if the holding force of the element 21 by the catch layer 25 is stronger than the holding force of the element 21 by the blistering layer 24, the separation of the blistering layer 24 and the element 21 will be promoted in accordance with the separation of the transfer substrate 22 and the substrate 23. Therefore, the completion of the transfer of the element 21 to the substrate 23 can be accelerated.
[0050] After the elements 21 transferred to the substrate 23 and the blistering layer 24 are completely separated by the substrate separation process, the transfer substrate 22 and the substrate 23 move relative to each other in the direction of the arrangement of the elements 21 on the transfer substrate 22 (the X-axis direction in Figure 8). In this description, this process is referred to as the arrangement direction movement process. In this embodiment, the transfer substrate 22 and the substrate 23 move relative to each other as the transfer substrate gripping portion 13 moves in the X-axis direction.
[0051] As a result of this alignment direction movement process, the pitch of the elements 21 on the transfer substrate 22, which was originally a distance P1 as shown in Figure 8(a), can be arbitrarily adjusted, and multiple elements 21 can be arranged on the transfer substrate 23 at any pitch, as will be described later.
[0052] Here, if we were to attempt to perform the alignment direction movement process without a substrate separation process as in the conventional method, the blistering layer 24 may continue to adhere to the element 21 until the blister 30 deflates, even after the entire surface of the element 21 that is held by the substrate 23 is held by the substrate 23.
[0053] Furthermore, if the alignment direction movement process is carried out while the blistering layer 24 remains attached to the element 21, the element 21 on the transfer substrate 23 may be pulled by the blistering layer 24, potentially causing misalignment.
[0054] Whether or not the blistering layer 24 causes the element 21 to shift position depends on several factors: if it is due to the blistering layer 24, it depends on variations in the pressing force and adhesion to the catch layer 25 due to the size and shape of the blister 30, and variations in the adhesive strength and thickness of the blistering layer 24 itself. If it is due to the element 21, it depends on the non-uniformity of the shape of the element 21 and the resulting variations in adhesion to the catch layer. If it is due to the catch layer 25, it depends on variations in its adhesive strength and thickness. If it is due to the laser beam 11, it depends on variations in its irradiation position and energy distribution.
[0055] In contrast, in the present invention, a substrate separation step is provided before the alignment direction movement step, so that the element 21 is completely separated from the blistering layer 24 when the alignment direction movement step starts. Therefore, it is possible to prevent the misalignment of the element 21 on the transfer substrate 23 as described above. In this embodiment, the alignment direction movement step starts after the substrate separation step is completed, but the alignment direction movement step may also start during the substrate separation step, provided that the blistering layer 24 is completely separated from the element 21.
[0056] After the alignment direction movement process is completed, the transfer substrate 23 rises as the transfer substrate gripping part 14 rises, as shown in Figure 8(d), and the distance between the two substrates returns from the second distance d2 to the first distance d1. This prepares the next element 21. In this explanation, this process is called the substrate approach process.
[0057] In this embodiment, as shown in Figure 7, the upward movement of the substrate gripping portion 14 and the substrate 23 begins a short time after the irradiation of the element 21 with laser light 11 is completed. By doing so, the blister 30 that was used to transfer the element 21 begins to shrink when the substrate approach process begins, and the possibility of re-adhesion between the element 21 and the blistering layer 24 due to the gap between the two substrates returning to gap d1 can be reduced.
[0058] In this embodiment, the substrate approach process begins after the alignment direction movement process is completed. However, the substrate approach process may also begin during the alignment direction movement process, provided that the blistering layer 24 does not reattach to the element 21.
[0059] As described above, through the transfer preparation process, transfer process, substrate separation process, alignment direction movement process, and substrate approach process, the pitch of the elements 21 on the substrate to be transferred 23 is adjusted to an arbitrary pitch with respect to the pitch of the elements 21 on the transfer substrate 22 (distance P1), as shown by distance P2 in Figure 8(e), and then the next element 21 is transferred from the transfer substrate 22 to the substrate to be transferred 23.
[0060] The above transfer method makes it possible to transfer the element from the transfer substrate to the correct position on the substrate during element transfer by blistering.
[0061] Herein, the transfer method of the present invention is not limited to the embodiments described above, but may be other embodiments within the scope of the present invention. For example, in the above description, the blistering layer and the catch layer hold the element by adhesive force, but the element may be held by a holding force other than adhesive force.
[0062] Furthermore, in the above description, the substrate separation process is started before the entire element 21 is held on the transfer substrate 23 during the transfer process. However, it is not limited to this, for example, if the blistering layer 24 is still attached to the element 21 after the entire element 21 has been held on the transfer substrate 23, the substrate separation process may be started from that point.
[0063] Furthermore, in the above description, the element 21 has a configuration in which a portion of it contacts the substrate 23 first, and then the portion held by the substrate 23 gradually increases until the entire element 21 is eventually held by the substrate 23. However, the system is not limited to this configuration, and as shown in Figure 9, the entire surface of the element 21 may simultaneously contact the substrate 23 by, for example, irradiating the center of the element holding region with laser light.
[0064] Furthermore, in the above description, the laser beam 11 is irradiated into the element holding region 24a as shown in Figure 3(a), etc., but the laser beam 11 may also be irradiated in the vicinity of the element holding region 24a and around the element holding region 24a, provided that blistering brings the predetermined element 21 closer to the transfer substrate 23.
[0065] Furthermore, in the above description, the substrate gripping portion 14 moves vertically during the substrate separation process and the substrate approach process, but the transfer substrate gripping portion 13 may also move vertically. [Explanation of symbols]
[0066] 10 Transfer device 11. Laser light (active energy rays) 12. Laser light source (energy irradiation section) 13 Transfer substrate gripping section 14 Transferred substrate gripping part 15 Galvano Mirror 16 Fθ lens 21 elements 22 Transfer substrate 22a Glass surface 23 Substrate to be transferred 24 blistering layers 24a Element holding region 25 Catch Layer 30 Blisters 30a Large Blister 30b Small Blister 111 Laser light 121 elements 122 Transfer substrate 123 Substrate to be transferred 124 blistering layers 125 Catch Layer 130 Blister
Claims
[Claim 1] This is a transfer method for transferring elements arranged on a transfer substrate to a substrate to be transferred. A transfer preparation step involves placing the transfer substrate and the substrate to be transferred facing each other so that the distance between the transfer substrate and the substrate to be transferred is a first distance, with the transfer substrate holding a predetermined element, and the predetermined element being sandwiched between the two. A transfer step in which a blister is formed on the transfer substrate near the holding position of the predetermined element, thereby bringing the predetermined element and the substrate to be transferred closer together and holding the predetermined element on the substrate to be transferred, A substrate separation step in which the distance between the transfer substrate and the substrate to be transferred is widened to a second distance that is greater than the first distance, A movement step in which the transfer substrate and the substrate to be transferred are moved relative to each other in the direction of the arrangement of elements on the transfer substrate, A substrate approach step in which the distance between the transfer substrate and the substrate to be transferred is returned to the first distance, It has, In the transfer process, a portion of the predetermined element is initially held on the substrate to be transferred, and then the portion held on the substrate to be transferred gradually increases until the entire predetermined element is eventually held on the substrate to be transferred. A transfer method characterized in that the substrate separation step is started before the entire predetermined element is held on the substrate to be transferred in the transfer step.