Catalyst thermal deposition of carbon-containing materials

Thermal deposition of silicon-carbon-containing layers using plasma-free processing addresses uniformity and material challenges in miniaturized semiconductors, achieving high carbon content and conformal films with reduced roughness for improved semiconductor manufacturing.

JP7865990B2Active Publication Date: 2026-05-26APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
APPLIED MATERIALS INC
Filing Date
2022-04-18
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Conventional semiconductor processing methods struggle to maintain uniformity and material properties of patterned layers as device miniaturization advances, particularly in forming conformal films with sufficient stress characteristics and selective material removal.

Method used

A thermal deposition process using silicon-, carbon-, and boron-containing precursors, conducted in a plasma-free environment, forms silicon-carbon-containing layers with controlled concentrations and conformality, enabling adjustable film properties and higher carbon content.

Benefits of technology

The method produces films with high carbon concentration, improved conformality, and reduced roughness, facilitating easier material removal and maintaining structural integrity in miniaturized semiconductor devices.

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Abstract

An exemplary method of semiconductor processing can include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor can be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate can be disposed in the processing region of the semiconductor processing chamber. The method can include providing a boron-containing precursor to the processing region of the semiconductor processing chamber. The method can include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the boron-containing precursor at a temperature greater than about 250° C. The method can include forming a silicon-carbon-containing layer on the substrate.
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