Retaining member and method for manufacturing the retaining member
The laminated structure with specific via connections and protruding interfaces in electrostatic chucks addresses the need for stable power supply in semiconductor manufacturing by ensuring efficient, unidirectional current flow and reducing current loss.
JP7866117B1Active Publication Date: 2026-05-26NITERRA CO LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- NITERRA CO LTD
- Filing Date
- 2025-06-18
- Publication Date
- 2026-05-26
AI Technical Summary
Technical Problem
Existing electrostatic chucks in semiconductor manufacturing require improved electrical connections to ensure stable power supply and reduce current loss.
Method used
A laminated structure of insulating and conductive layers with specific via connections and protruding interfaces to facilitate unidirectional current flow, reducing electrical resistance and ensuring reliable connections.
Benefits of technology
The solution enables efficient, unidirectional current flow, enhancing power supply stability and reducing current loss, thereby improving power supply efficiency.
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Smart Images
Figure 0007866117000001_ABST
Abstract
The present invention provides a retaining member and a method for manufacturing the retaining member, which allow for the design of conductive paths so that current flows in the intended direction. [Solution] A holding member 10 is formed by stacking a second insulating layer 52, a second conductor layer 62, a first insulating layer 51, a first conductor layer 61, a third insulating layer 53, and a third conductor layer 63 in this order in the Z-axis direction, wherein the third insulating layer has a first through hole 54 penetrating in the Z-axis direction, and a first via portion 48 made of a conductive material is disposed in the first through hole, the first insulating layer has a second through hole 55 penetrating in the Z-axis direction, and a second via portion 49 made of a conductive material is disposed in the second through hole, the first conductor layer has a first via connection portion 64 sandwiched between the first via portion and the first insulating layer, and a second via connection portion 65 sandwiched between the second via portion and the third insulating layer, the thickness α in the Z-axis direction of the first via connection portion is smaller than the thickness β in the axial direction of the second via connection portion.
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