Semiconductor device, power converter, and method for manufacturing a semiconductor device
The semiconductor device's granular material-based electrode structure addresses void formation issues by facilitating gas expulsion during soldering, ensuring conductivity and enhancing manufacturing efficiency.
JP7870886B2Active Publication Date: 2026-06-05MITSUBISHI ELECTRIC CORP
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- MITSUBISHI ELECTRIC CORP
- Filing Date
- 2024-06-17
- Publication Date
- 2026-06-05
Smart Images
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Abstract
Provided is a semiconductor device in which pores generated in a junction between an electrode and an object to be joined are reduced. The semiconductor device includes a first electrode, a plurality of granular materials, and a second electrode. The first electrode is provided on a semiconductor substrate. The plurality of granular materials is formed on the first electrode. The second electrode is provided on the first electrode on which the plurality of granular materials is formed. The surface of the second electrode includes an uneven portion. The uneven portion is formed in accordance with the plurality of granular materials on the first electrode, which is the base of the second electrode.
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