Composition for forming a resist underlayer film containing a hydroxycinnamic acid derivative

Abstract

Provided is a resist underlayer film that mainly demonstrates favorable resistance to resist solvents that are organic solvents and resist developers that are alkali aqueous solutions but also demonstrates favorable removability (solubility) in wet-etching chemicals.　According to the present invention, an i-line resist underlayer film formation composition includes: a product of reacting an at least bifunctional glycidyl ester epoxy resin and a compound A represented by formula (A); and a solvent. (In formula (A), R1 represents a hydrogen atom, a C1–10 alkyl group, or a C6–40 aryl group, X represents a C1–10 alkyl group, a hydroxyl group, a C1–10 alkoxy group, a C1–10 alkoxycarbonyl group, a halogen atom, a cyano group, a nitro group, or a combination thereof, and n represents an integer from 0 to 4.)

Claims

1. A composition for forming an underlayer film of an i-ray resist, comprising a compound having a structure represented by the following formula (1), or a compound having a structure represented by the following formula (2), and a solvent. 【Chemistry 1】 (In formula (1), R １ - represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 40 carbon atoms; X represents an alkyl group having 1 to 10 carbon atoms, a hydroxyl group, an alkoxy group having 1 to 10 carbon atoms, an alkoxycarbonyl group having 1 to 10 carbon atoms, a halogen atom, a cyano group, or a nitro group, or a combination thereof; -Y- represents -O-, -S-, or -SO ２ -, -SO-, -COO-, or -NH- represents a divalent organic group comprising an alkylene group having 1 to 6 carbon atoms, or a ring selected from the group consisting of optionally substituted aromatic rings, optionally substituted aliphatic rings, and optionally substituted heterocycles, or a divalent organic group comprising the aforementioned ring and an alkylene group having 1 to 6 carbon atoms, and n represents an integer from 0 to 4. 【Chemistry 2】 (In formula (2), Z represents a trivalent organic group comprising a ring selected from the group consisting of an optionally substituted aromatic ring, an optionally substituted aliphatic ring, and an optionally substituted heterocycle, or a trivalent organic group comprising the ring and an alkylene group having 1 to 6 carbon atoms, Q １ Q ２ , and Q ３ Each of these independently represents a divalent organic group consisting of the structure shown in formula (3) below. 【Transformation 3】 (In formula (3), R １ - represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 40 carbon atoms; X represents an alkyl group having 1 to 10 carbon atoms, a hydroxyl group, an alkoxy group having 1 to 10 carbon atoms, an alkoxycarbonyl group having 1 to 10 carbon atoms, a halogen atom, a cyano group, or a nitro group, or a combination thereof; -Y- represents -O-, -S-, or -SO ２ - represents -SO-, -COO-, or -NH-, where n is an integer from 0 to 4, and *1 and *2 represent combinations, respectively.

2. The i-ray resist underlayer film forming composition according to claim 1, further comprising at least one selected from the group consisting of a crosslinking agent, an acid, and an acid generator.

3. The i-line resist underlayer film forming composition according to claim 1, for application on a substrate containing copper on its surface.

4. A resist underlayer film characterized by being obtained by removing a solvent from a coating film made of the i-line resist underlayer film forming composition described in Claim 1.

5. A resist underlayer film comprising the i-line resist underlayer film forming composition according to claim 1, which has been baked, dried, or concentrated.

6. A resist underlayer film according to claim 4, formed on a substrate containing copper on its surface.

7. A substrate having a copper seed layer and a resist underlayer film according to claim 4 formed on the copper seed layer on its surface.

8. A step of forming a resist underlayer film by applying the i-line resist underlayer film formation composition described in claim 1 onto a substrate containing copper on its surface and baking it, A step of forming a resist film by coating the resist on the resist underlayer film and baking it. A step of exposing the resist underlayer film and the semiconductor substrate coated with the resist, and The process of developing and patterning the resist film after exposure. A method for manufacturing a substrate having a patterned resist film, including the following.

9. A step of forming a resist underlayer film on a substrate containing copper on its surface, the resist underlayer film being made of the i-line resist underlayer film forming composition described in claim 1, A step of forming a resist film on the resist underlayer film, A process comprising: forming a resist pattern by irradiating a resist film with light or an electron beam and then developing it; and then removing the resist underlayer film exposed between the resist patterns. A step of performing copper plating between the formed resist patterns, A step of removing the resist pattern and the underlying resist layer film therebenea, A method for manufacturing a semiconductor device, characterized by including the following:

10. The method for manufacturing a semiconductor device according to claim 9, wherein at least one of the steps for removing the resist underlayer film is performed by wet processing.

11. A reaction product obtained by reacting a bifunctional or more glycidyl ester type epoxy resin with compound A represented by the following formula (A), and solvents A method for producing an i-ray resist underlayer film formation composition, comprising obtaining an i-ray resist underlayer film formation composition by including a certain substance. 【Chemistry 4】 (In formula (A), R １ (wherein X represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 40 carbon atoms; X represents an alkyl group having 1 to 10 carbon atoms, a hydroxyl group, an alkoxy group having 1 to 10 carbon atoms, an alkoxycarbonyl group having 1 to 10 carbon atoms, a halogen atom, a cyano group, or a nitro group, or a combination thereof; and n represents an integer from 0 to 4.)

Images