Method for manufacturing vapor deposition masks and electronic devices

Abstract

The objective is to provide a vapor deposition mask with improved adhesion to the substrate to be vapor-deposited and improved film formation of the vapor-deposited film, and a method for manufacturing an electronic device using the vapor deposition mask. [Solution] The present invention provides a membrane having a first surface facing the substrate to be deposited on and a second surface located on the opposite side of the first surface and facing the deposition source, with a plurality of openings penetrating between the first surface and the second surface, a magnetic layer on the first surface or intermediate layer of the deposition mask, the membrane having a Si-containing layer containing Si, the total thickness of the membrane being 0.3 μm or more and 20 μm or less, the total thickness of the magnetic layer being 0.1 μm or more and 7 μm or less, and the membrane having a single-layer structure or a multilayer structure having a SIN layer.

Description

Technical Field

[0001] The present disclosure relates to a vapor deposition mask and a method for manufacturing an electronic device.

Background Art

[0002] For example, a vapor deposition mask used for coating three colors of RGB in the production of an organic EL display is known.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In a film forming apparatus, when a gap (clearance) occurs between the vapor deposition mask and the substrate to be vapor deposited, the film forming position accuracy of the vapor deposition film formed on the substrate to be vapor deposited decreases, and color mixing occurs between adjacent pixels. Therefore, in a film forming apparatus, improvement in the adhesion between the vapor deposition mask and the substrate to be vapor deposited is required.

[0005] In the invention described in Patent Document 1, it is disclosed that a magnetic metal is plated on the upper surface of the entire silicon-based mask. By this, it is said that the silicon-based mask and the substrate to be vapor deposited can be adhered to each other. However, since the thickness of the plating layer increases the thickness of the vapor deposition mask by the thickness of the plating layer, the distance until the vapor deposited material reaches the surface of the substrate to be vapor deposited through the opening formed in the vapor deposition mask becomes long. As a result, problems such as a decrease in the film forming position accuracy of the vapor deposition film, deposition of the vapor deposited material on the side wall surface of the opening, narrowing of the opening width from the predetermined width, and inability to accurately form a vapor deposition film having a desired width dimension occur.

[0006] This disclosure aims to provide a vapor deposition mask with improved adhesion to the substrate to be vapor-deposited and improved film formation of the vapor-deposited film, and a method for manufacturing an electronic device using the vapor deposition mask. [Means for solving the problem]

[0007] The deposition mask of this disclosure is a deposition mask for depositing a deposition material from a deposition source onto the surface of a substrate to be deposited through an opening, The deposition mask has a membrane having a plurality of openings, and the deposition mask is The aforementioned membrane First, facing the substrate to be deposited layer And, the first layer The second is located on the opposite side and faces the deposition source side. layer and A magnetic layer between the first layer and the second layer. Having 、 The membrane is characterized by having a Si-containing layer containing Si, a total thickness of the membrane being 0.3 μm or more and 20 μm or less, a total thickness of the magnetic layer being 0.1 μm or more and 7 μm or less, and the membrane having a single-layer structure or a multilayer structure having a SiN layer. [Effects of the Invention]

[0008] According to this disclosure, by embedding a magnetic material in at least one of the membrane or the support substrate, adhesion to the substrate to be deposited can be improved, an increase in membrane thickness can be suppressed, and the film formation performance of the deposited film can be improved. Alternatively, by positioning the magnetic layer at a specific location and adjusting the total thickness of the membrane and magnetic layer, adhesion to the substrate to be deposited can be improved, while an increase in membrane thickness can be suppressed, thereby improving the film formation performance of the deposited film. [Brief explanation of the drawing]

[0009] [Figure 1] This is a plan view showing the deposition mask of the first embodiment. [Figure 2] Figure 1 is a cross-sectional view of the vapor deposition mask of this embodiment, shown after being cut. [Figure 3] This is a partially enlarged plan view showing multiple cell regions of the deposition mask in detail. [Figure 4] Partial enlarged cross-sectional view showing a part of the opening of the evaporation mask according to the first embodiment. [Figure 5] Cross-sectional view showing a method for manufacturing an electronic device using the evaporation mask according to the first embodiment. [Figure 6] Planar view showing an evaporation mask according to an embodiment different from that of FIG. 1. [Figure 7] Planar view showing an evaporation mask according to an embodiment different from that of FIG. 1. [Figure 8] Partial enlarged cross-sectional view showing a cross-section of an evaporation mask according to an embodiment different from that of FIG. 4. [Figure 9] Partial enlarged cross-sectional view showing a cross-section of an evaporation mask according to an embodiment different from that of FIG. 4. [Figure 10] Partial enlarged cross-sectional view showing a cross-section of an evaporation mask according to an embodiment different from that of FIG. 4. [Figure 11] Enlarged planer view of the magnetic material embedded in the dividing groove. [Figure 12] Enlarged cross-sectional view of the magnetic material. [Figure 13] Partial enlarged cross-sectional view of an evaporation mask showing that the structure of the support portion for supporting the membrane is different. [Figure 14] Process diagram showing the first manufacturing method of the evaporation mask. [Figure 15] Process diagram showing the second manufacturing method of the evaporation mask. [Figure 16] Process diagram showing the third manufacturing method of the evaporation mask. [Figure 17] Process diagram showing the fourth manufacturing method of the evaporation mask. [Figure 18] Process diagram showing the fifth manufacturing method of the evaporation mask. [Figure 19] Process diagram showing the sixth manufacturing method of the evaporation mask. [Figure 20] Process diagram showing the seventh manufacturing method of the evaporation mask. [Figure 21] Process diagram showing the eighth manufacturing method of the evaporation mask. [Figure 22] Cross-sectional view of the evaporation mask according to the second embodiment. [Figure 23] This is a cross-sectional view of a vapor deposition mask in a different embodiment from Figure 22. [Figure 24] This is a cross-sectional view of a vapor deposition mask in a different embodiment from Figure 22. [Figure 25] This is a cross-sectional view of a vapor deposition mask in a different embodiment from Figure 22. [Figure 26] This is a cross-sectional view of a vapor deposition mask in a different embodiment from Figure 22. [Figure 27] This is a cross-sectional view of a vapor deposition mask in a different embodiment from Figure 22. [Figure 28] This is a cross-sectional view of a vapor deposition mask in a different embodiment from Figure 22. [Figure 29] This is a cross-sectional view of a vapor deposition mask in a different embodiment from Figure 22. [Figure 30] This is a cross-sectional view of a vapor deposition mask in a different embodiment from Figure 22. [Modes for carrying out the invention]

[0010] The embodiments will be described below with reference to the drawings. However, the drawings are schematic or conceptual, and the dimensions, proportions, and numbers in each drawing are not necessarily the same as those in reality. Furthermore, even when the same part is represented between drawings, the relationship of dimensions, proportions, and numbers may be represented differently. For example, the number of openings along line AA shown in Figure 1 does not match the number of openings appearing in the cross-section in Figure 2, but in Figure 2, the number of openings has been reduced for clarity. The embodiments described below are illustrative of structures to embody the technical concept of this disclosure and do not specify the technical concept of this disclosure. In the following description, elements having the same function and configuration are denoted by the same reference numeral, and redundant explanations are omitted. Furthermore, the lower and upper limits of numerical ranges include the error range. Also, the notation "~" includes the lower and upper limits.

[0011] <Background to the present invention> Vapor deposition masks used for RGB color separation in OLED display fabrication are well-known, and there is a growing demand for vapor deposition masks specifically for RGB color separation. Because vapor deposition masks are prone to deformation due to their own weight, a technique is known in which magnetic force is used to tightly adhere the vapor deposition mask to the substrate to be deposited within the film deposition apparatus.

[0012] However, as in Patent Document 1, when a magnetic metal material is electroplated over the entire surface of a Si-based membrane having an opening, the membrane becomes thicker by the thickness of the plating, leading to problems such as reduced accuracy of the deposition position of the deposited film, accumulation of deposited material on the sides of the opening, and the opening width becoming narrower than the predetermined width, thus decreasing the film-forming ability of the deposited film.

[0013] Therefore, the inventors conducted diligent research and have developed a deposition mask that can improve adhesion to the substrate to be deposited on, suppress the increase in membrane thickness, and improve the film formation performance of the deposited film by embedding a magnetic material in the membrane or support substrate. Furthermore, it was found that even when the magnetic layer is embedded in a specific position on the membrane, by setting the total thickness of the membrane and magnetic layer within a certain range, it is possible to improve adhesion to the substrate to be deposited on, suppress the increase in membrane thickness, and improve the film formation performance of the deposited film.

[0014] <Overview of the deposition mask 1 in the first embodiment> Figure 1 is a plan view of the deposition mask 1 in the first embodiment. Figure 2 is a cross-sectional view of the deposition mask 1 shown in Figure 1, cut along line AA and viewed from the direction of the arrow. Figure 3 is a partially enlarged plan view showing multiple cell regions of the deposition mask 1 in an enlarged manner. Figure 4 is a partially enlarged cross-sectional view showing a part of the opening of the deposition mask 1 in the first embodiment in an enlarged manner. Figure 5 is a cross-sectional view showing a method for manufacturing an electronic device using the deposition mask of the first embodiment.

[0015] As shown in Figures 1 and 2, the deposition mask 1 has a laminated structure consisting of a membrane 2, an insulating layer 3, and a support substrate 4, and is composed of, for example, an SOI (Silicon on Insulator) substrate 9.

[0016] Figure 1 shows the planar shape of the membrane 2 that appears on the surface of the deposition mask 1, and as shown in Figure 2, the insulating layer 3 and support substrate 4 are arranged on the back side of the membrane 2. The structure that supports the membrane 2 on the back side of the membrane 2 is sometimes referred to as the "support section". In Figure 2, the insulating layer 3 and support substrate 4 correspond to the support section, but the laminated structure of the first back layer 70 and the second back layer 71, as shown in Figure 22, can also be defined as the "support section". Furthermore, the support section may consist only of the support substrate 4 or only of the insulating layer 3.

[0017] The membrane 2 is also called a semiconductor layer or active layer. The membrane 2 is a substrate comprising a first surface 2a and a second surface 2b facing each other in the thickness direction, and an outer peripheral edge 2c surrounding the outer periphery between the first surface 2a and the second surface 2b. The thickness of the membrane 2 is not limited, but is 50 μm or less, preferably at least the thickness of the region having multiple openings in the membrane 2 (cell array region 12, details of which will be described later) is 20 μm or less, more preferably 10 μm or less, and even more preferably 7.5 μm or less. By setting the total thickness of at least the cell array region 12 to within the range of 20 μm or less, the film formation performance of the deposited film can be improved. Furthermore, while there is no lower limit to the thickness of membrane 2, it can be 0.3 μm or more, 0.4 μm or more, or 0.5 μm or more. If it is less than 0.3 μm, the rigidity will be insufficient, and there is a higher possibility that some areas of the cell array region 12 will detach. The insulating layer 3 can be an oxide layer or a nitride layer, but it is preferably an oxide layer, and specifically, a silicon oxide (SiO2) layer is preferred. The insulating layer 3 is also called the BOX layer (Buried Oxide Layer). There is no limit to the thickness of the insulating layer 3, but for example, it is about 100 nm to 20 μm. The membrane 2 may be a single-layer structure or a multi-layered structure. For example, a single-layer structure of Si or SiN can be used, or a multi-layered structure including these material layers can be used. Examples of membrane 2 include Si, SiN, SiN / Si, Si / SiN, SiN / Si / SiO2, SiN / SiO2 / Si, Si / SiN / SiO2, Si / SiO2 / SiN, SiN / SiO2 / SiN, SiN / Si / SiN, etc. Here, the symbol " / " indicates a configuration where multiple layers are stacked sequentially from the deposition source side.

[0018] The outer shape of membrane 2 is preferably a rectangular or disc-shaped wafer, and while there is no limit to the diameter (or the length of one side in the case of a rectangular shape), it is preferably about 100 mm to 500 mm.

[0019] As shown in Figures 1 and 2, multiple cell regions 6 are formed in the membrane 2. In Figures 1 and 2, only one cell region 6 is labeled as representative.

[0020] As shown in Figures 1 and 2, between adjacent cell regions 6, there is a region of a predetermined width where no opening 10 is formed (referred to as the "boundary region 11"). As shown in Figure 1, multiple cell regions 6 are arranged in a matrix via the boundary region 11. The combined region of multiple cell regions 6 and the boundary region 11 is referred to as the cell array region 12. The area between the cell array region 12 and the end of the membrane 2 is the outer peripheral region 13.

[0021] As shown in Figures 1 and 2, each cell region 6 consists of a collection of multiple openings 10. These openings 10 penetrate from the first surface 2a to the second surface 2b of the membrane 2. In Figure 1, numerous openings 10 are formed in each cell region 6, but in Figure 2, the number of openings 10 is reduced and the width of the openings 10 is enlarged to make the cross-sectional shape easier to see.

[0022] As shown in Figure 5, the first surface 2a of the membrane 2 is the surface that is in close contact with the substrate 20 to be deposited, and the second surface 2b is the back surface that faces the deposition source 21.

[0023] The planar pattern of the opening 10 (the shape viewed from directly above the membrane 2 toward the first surface 2a) is not limited and can be a polygon, a circle, or an ellipse, for example. Furthermore, all openings 10 may have the same planar pattern, or some may have different patterns. In addition, each opening 10 may be arranged regularly, irregularly, or a mixture of regular and irregular arrangements.

[0024] The insulating layer 3 can be an oxide layer or a nitride layer, but it is preferably an oxide layer, and specifically, a silicon oxide (SiO2) layer is preferred. The insulating layer 3 is also called the BOX layer (Buried Oxide Layer). There is no limit to the thickness of the insulating layer 3, but for example, it is about 100 nm to 20 μm. The insulating layer 3 may be a single layer or a multi-layered structure. For example, a single layer of SiO2 or SiN can be used, or it may be a multi-layered structure including these material layers. Alternatively, the insulating layer 3 may have an upper layer and a lower layer with another insulating layer or a non-insulating layer such as a Si layer interposed between them.

[0025] The support substrate 4 is a semiconductor substrate, for example, a Si substrate. The support substrate 4 may be a multilayer structure consisting of multiple layers including SiN, SiO2, etc., rather than a single layer of Si. While there is no limit to the thickness of the support substrate 4, it is typically around 100 μm to 1000 μm. Examples of multilayer structures for the support substrate 4 include SiO2 / Si, SiN / Si, SiO2 / SiN / Si, and SiN / SiO2 / Si, in that order from the membrane side.

[0026] As shown in Figure 2, the support substrate 4 can function as columnar portions 16a surrounding each cell region 6 on the second surface 2b of the membrane 2, and as an outer peripheral frame 16b located in the outer peripheral region 13. Therefore, the membrane 2 can maintain a taut state with the support substrate 4, eliminating the need for tensioning. As shown in Figure 2, the columnar portions 16a are located inside the outer peripheral frame 16b, and they are all the same length (height). However, for example, the height of the columnar portions 16a may be lower than that of the outer peripheral frame. However, maintaining the same height allows for better strength. Furthermore, the columnar portions 16a do not necessarily have to be formed.

[0027] The deposition mask 1 shown in Figures 1 and 2 is placed between the substrate 20 to be deposited and the deposition source 21, as shown in Figure 5. At this time, the first surface 2a of the membrane 2 of the deposition mask 1 is oriented toward the substrate 20, and the second surface 2b of the membrane 2 is oriented toward the deposition source 21.

[0028] The deposition mask 1 is placed in the holder (not shown) of the film deposition apparatus. The deposition mask 1 is aligned with the substrate 20 to be deposited, and a magnetic force is generated to bring the deposition mask 1 and the substrate 20 into close contact.

[0029] <Detailed description of the magnetic material M embedded in the deposition mask 1 in the first embodiment> As shown in Figures 1 to 4, a magnetic material M1 is embedded in the membrane 2. Specifically, grooves 40 are formed in the membrane 2 from the first surface 2a to the second surface 2b, and the magnetic material M1 is embedded in the grooves 40. The structure of the grooves 40 will be described in detail later.

[0030] The membrane 2 is formed from a Si-containing layer, and the magnetic material M1 is embedded in the Si-containing layer. Therefore, as shown in Figures 2 and 4, the membrane 2 has a cross-section in which the magnetic material M1 and the Si-containing layer appear side by side, and this configuration differs from that of a metal mask in terms of processing accuracy and thickness. In other words, in this embodiment, a large number of openings 10 can be formed in the Si-containing layer with high precision, and the thinness of the membrane 2 can be maintained by embedding the magnetic material in a part of the Si-containing layer.

[0031] The magnetic material M1 is embedded in the membrane 2 from the first surface 2a toward the second surface 2b, and therefore, the surface of the magnetic material M1 is exposed on the first surface 2a side.

[0032] Examples of Si-containing layers include Si, SiO2, and SiN, as described above. The structure may be a single layer using any one of these materials, or it may be a laminated structure of multiple layers selected from these materials.

[0033] The magnetic material M1 is composed of a magnetic metallic material. While not limited to these, examples include iron, nickel, cobalt, and alloys containing these materials, such as ferritic stainless steel (SUS430, etc.), martensitic stainless steel (SUS410, etc.), Invar (iron-nickel alloy), and Super Invar (iron-nickel-cobalt alloy).

[0034] As described above, the membrane 2 has a cell region 6 consisting of a collection of multiple openings 10, a cell array region 12 which is a collection of multiple cell regions 6 and boundary regions 11, and a non-cell array region other than the cell array region 12. In the embodiments shown in Figures 1 and 2, the non-cell array region corresponds to the outer peripheral region 13 located around the cell array region 12. The magnetic material M1 is embedded in at least one of the cell array region 12 or the non-cell array region (outer peripheral region 13).

[0035] In the embodiment shown in Figure 1, the magnetic material M1 is embedded in the boundary regions 11 between each cell region 6 of the cell array region 12. For example, multiple magnetic materials M1 are formed between each cell region 6 that are parallel in the row direction (X) and between each cell region 6 that are parallel in the column direction (Y). Between each cell region 6 that are parallel in the row direction (X), the magnetic material M1 is formed to be elongated in the column direction (Y), and between each cell region 6 that are parallel in the column direction (Y), the magnetic material M1 is formed to be elongated in the row direction (X). In this embodiment, each magnetic material M1 is separated from the others.

[0036] However, the planar configuration of magnetic material M1 shown in Figure 1 is just one example; other specific examples are shown in Figures 6 and 7. Magnetic materials M2 to M10 shown in Figures 6 and 7 are all embedded in membrane 2.

[0037] In Figure 6(a), magnetic material M2 is embedded between each cell region 6 and surrounding the outer cell region 6. Magnetic material M2 is a planar form in which a lattice shape formed between each cell region 6 and an outer frame shape formed to surround the outer cell region 6 are integrally formed. Magnetic material M3 shown in Figure 6(b) is a planar form with a lattice shape obtained by removing the outer frame shape from magnetic material M2 in Figure 6(a). Magnetic material M4 shown in Figure 6(c) is a configuration in which the number of magnetic material M3 extending in the row direction (X) and the number of magnetic material M3 extending in the column direction (Y) are reduced from the lattice-shaped magnetic material M3 shown in Figure 6(b). As shown in Figure 6(c), the boundary region 11 between each cell region 6 has four extension directions in the row direction (X) and three extension directions in the column direction (Y). However, the magnetic material M4 has two extensions in the row direction (X) and one extension in the column direction (Y), and these are integrally intersected. The number of magnetic material Ms in the row direction (X) and column direction (Y) is not limited. The magnetic material M5 shown in Figure 6(d) is formed by removing a portion of the magnetic material M1 shown in Figure 1 and intermittently forming it only between the inner cell regions 6, excluding the outer cell regions 6 of the cell array region 12. In Figure 6(d), the magnetic material M5 is provided in one row between adjacent cell regions 6, but for example, as shown in Figure 6(e), the magnetic material M5 may be embedded in multiple rows between adjacent cell regions 6. Alternatively, the magnetic material M5 may be separated into short sections in the row direction (X), so that multiple magnetic materials M5 are arranged in both the row direction (X) and the column direction (Y). The magnetic materials M5 embedded between adjacent cell regions 6 can also be arranged in a staggered pattern. In this way, by arranging multiple columns of magnetic materials M5 embedded between adjacent cell regions 6, the area of ​​the magnetic material M5 can be increased, and the adhesion to the deposition substrate 20 can be partially improved. The magnetic material M6 shown in Figure 6(f) is composed of point shapes, unlike those in Figures 6(a) to 6(e). The point-shaped magnetic material M6 can be formed as a polygon or a circle, but the shape is not limited. The magnetic material M6 in Figure 6(f) is arranged diagonally from the matrix direction (X, Y) of each cell region 6. Note that the magnetic material M6 provided at a diagonal position in each cell region 6, as shown in Figure 6(f), is also an example of being embedded between adjacent cell regions 6.The planar configurations of the magnetic materials shown in Figures 6(a) to 6(f) are examples only and are not limited to these. For example, the separated magnetic materials M5 shown in Figure 6(d) may be connected, or the point-shaped magnetic materials M6 shown in Figure 6(f) may be arranged between the cell regions 6 that face each other in the matrix direction (X, Y).

[0038] The magnetic material M7 shown in Figure 7(a) is arranged in the outer peripheral region 13. The magnetic material M7 shown in Figure 7(a) extends in the column direction (Y) on both sides of the row direction (X) of the cell array region 12, and extends in the row direction (X) on both sides of the column direction (Y) of the cell array region 12, and is separated in each case, but each magnetic material M7 may be integrated and surround the cell array region 12 without interruption, or it may be intermittently present at one or more locations different from those in Figure 7(a). The magnetic material M8 shown in Figure 7(b) is a configuration in which the magnetic material M7 shown in Figure 7(a) has been removed from the magnetic material M7 arranged on both sides of the column direction (Y) of the cell array region 12, leaving only the magnetic material M7 arranged on both sides of the row direction (X) of the cell array region 12. The magnetic material M9 shown in Figure 7(c) is a configuration in which the magnetic materials M7 arranged on both sides in the row direction (X) of the cell array region 12 are removed from the magnetic material M7 shown in Figure 7(a), leaving only the magnetic materials M7 arranged on both sides in the column direction (Y) of the cell array region 12. The magnetic material M10 shown in Figure 7(d) is a configuration in which the outer side surface is formed in a curved shape following the outer peripheral end 2c of the elongated magnetic material M8 shown in Figure 7(b). The magnetic material M10 shown in Figure 7(d) can increase the area of ​​the magnetic region compared to the magnetic material M8 shown in Figure 7(b). The planar shapes of the magnetic materials shown in Figures 7(a) to (d) are examples and are not limited to these. Furthermore, the magnetic materials M1 to M6 provided in the cell array region 12 shown as an example in Figures 1 and 6 and the magnetic materials M7 to M10 provided in the outer peripheral region 13 shown as an example in Figure 7 can be combined.

[0039] Thus, the magnetic material M is embedded in the cell array region 12, the outer peripheral region 13, or both the cell array region 12 and the outer peripheral region 13.

[0040] Although not limited to these, the magnetic material M is embedded in at least the central region of the deposition mask (membrane) 1. In the following, the term "magnetic material M" may be used, but this refers to the magnetic material described in Figures 1, 6, and 7 above, and further to the magnetic material described in Figure 8 and beyond, without distinction, or in particular, it is a concept that includes all magnetic materials that can be assumed from this embodiment, not limited to the form of the magnetic material shown in the drawings. The "central region" is a region that is of equal width in the matrix direction from the center point O of the deposition mask (membrane) 1, and may be narrower than the cell array region 12. Since a large number of openings 10 are provided within the cell array region 12, by placing the magnetic material M in the central region, the adhesion between the cell array region 12 and the substrate 20 to be deposited can be increased.

[0041] Furthermore, in a configuration in which the magnetic material M is embedded in the cell array region 12, it is preferable to embed it between adjacent cell regions 6 within the cell array region 12. Magnetic materials M1 to M6 shown in Figures 1 and 6 are examples of this.

[0042] As shown in Figure 3, it is preferable that the width dimension W1 of the magnetic material M1 is smaller than the width dimension W2 of the boundary region 11. This allows the magnetic material M1 to be embedded precisely within the width of the boundary region 11.

[0043] As shown in Figure 3, the width dimension W2 of the boundary region 11 is in millimeters, while the width dimension W1 of the magnetic material M1 can be formed in micrometers, which is an order of magnitude smaller. However, if the width dimension w1 of the magnetic material M1 is too small, the effect of this disclosure (improved adhesion to the deposition substrate 20) will decrease. Therefore, although the width dimension W1 of the magnetic material M1 is not limited, it can be approximately 1 / 1000 to 1 / 10 of the width dimension W2 of the boundary region 11. Also, although there is no lower limit to the width dimension of the magnetic material M1, it can be, for example, 10 μm or more, 20 μm or more, or 100 μm or more. In Figure 3, the width dimension of the magnetic material M1 is used as a representative example, but the same applies to the magnetic materials M2 to M6 embedded in the boundary region 11.

[0044] The width dimension W1 of the magnetic material M1 can also be expressed as the width dimension of the groove 40. That is, by forming the width dimension W1 of the groove 40 smaller than the width dimension W2 of the boundary region 11, the groove 40 can be formed accurately within the boundary region 11. The width dimension W2 of the boundary region 11 is not limited, but is approximately 1 to 10 mm. The width dimension W3 of the cell region 6 shown in Figure 3 is not limited, but is approximately 5 mm to 80 mm.

[0045] In a configuration in which a magnetic material M is embedded in a cell array region 12, it is possible to embed the magnetic material M between the openings 10 within each cell region 6. However, since this would involve embedding the magnetic material M in a narrow region between each opening 10, it is preferable to embed it in a boundary region 11 located between adjacent cell regions 6 within the cell array region 12.

[0046] As shown in Figure 7, the magnetic materials M7 to M10 can also be embedded in the outer peripheral region 13 located outside the cell array region 12 of the deposition mask (membrane 2). The outer peripheral region 13 has a larger space than the cell array region 12 in which the magnetic materials M7 to M10 can be embedded, and this larger space can be used to easily embed the wide magnetic materials M7 to M10 in the outer peripheral region 13.

[0047] Since alignment marks (not shown) are formed in the outer peripheral region 13, it is preferable to embed magnetic materials M7 to M10 in locations other than where the alignment marks are formed. Alternatively, if the alignment marks are recessed, magnetic materials M7 to M10 can be embedded within the alignment marks. Alternatively, the alignment marks can be constructed from magnetic materials M7 to M10.

[0048] The magnetic material M is preferably point-symmetric with respect to the center point O (see Figure 1) of the plane of the deposition mask (membrane), or line-symmetric with respect to the center lines L1 and L2 (see Figure 1) passing through the center point O. In particular, it is more preferable that the magnetic material M is line-symmetric with respect to both the center lines L1 and L2 that extend orthogonally in the direction from the center point O. The arrangements of the magnetic material M shown in Figures 1, 6, and 7 correspond to point-symmetric and line-symmetric shapes. By arranging the magnetic material M in such a symmetric shape, magnetic force can be generated at equidistant positions from the center O of the deposition mask 1, making it possible to achieve a balanced and close contact between the deposition mask 1 and the substrate 20 to be deposited.

[0049] Figure 8 is a cross-sectional view of the magnetic material M. Figure 8 shows one cell region 6 and boundary regions 11 located on both sides thereof (between adjacent cell regions 6). Not only the magnetic materials M embedded in the cell array region 12 in Figures 1 and 6, but also the magnetic materials M7 to M10 embedded in the outer peripheral region 13 shown in Figure 7 can have the cross-sectional structure shown in Figure 8. Therefore, the cross-sectional shape of each magnetic material M shown in Figure 8 may constitute at least one of the magnetic materials M1 to M10 shown in Figures 1, 6, and 7, or it may represent the cross-sectional shape of a magnetic material M other than magnetic materials M1 to M10. As shown in the figures in Figure 8, an example is given where the membrane is formed with a two-layer structure. In this example, the second layer 7 is a SiN layer and the first layer 8 is a Si layer.

[0050] In Figure 8(a), the magnetic material M11 is embedded in the membrane 2 from the second layer 7 to partway through the first layer 8. Therefore, the magnetic material M11 does not reach the insulating layer 3. As shown in Figure 8(a), the surface of the magnetic material M11 is almost flush with the first surface 2a of the membrane 2. On the other hand, in Figure 8(b), the surface of the magnetic material M12 is not flush with the first surface 2a of the membrane 2 and is recessed. Alternatively, as shown in Figure 8(c), the surface of the magnetic material M13 may protrude beyond the first surface 2a of the membrane 2. The amount of recess of the magnetic material M12 and the amount of protrusion of the magnetic material M13 are preferably small, for example, preferably 200 nm or less. Alternatively, they are preferably 1 / 10 or less of the thickness dimension of the membrane 2. By suppressing the protrusion of the magnetic material M13 shown in Figure 8(c), the gap between the deposition mask 1 and the substrate 20 can be made as small as possible, and the magnetic force from the magnetic material M13 can be increased, thereby improving the adhesion between the deposition mask 1 and the substrate 20. In Figure 8(d), the magnetic material M14 does not reach the first layer 8 of the membrane 2 but is embedded only in the second layer 7. In Figures 8(a) to 8(d), the magnetic materials M11 to M14 are formed within the thickness of the membrane 2 and do not reach the insulating layer 3, thereby increasing the width dimension W8 of the magnetic material M14 (typically shown in Figure 8(d)). As shown in Figure 8(d), the side wall surface S of the magnetic material M14 is inclined. In this embodiment, the width dimension of the membrane 2 is formed to gradually decrease from the second surface 2b side to the first surface 2a side. The side wall surface S may also be an inverse tapered surface. The support substrate 4 shown in Figure 8(d) corresponds to, for example, the columnar portion 16a shown in Figure 2. Because the width dimension of the columnar portion 16a is small, in order to form the magnetic material M15 with an inclined side wall surface S to reach from the membrane 2 to the insulating layer 3, as shown in Figure 8(e), or to form the magnetic material M16 with an inclined side wall surface S to extend beyond the membrane 2 and insulating layer 3 to the support substrate 4, as shown in Figure 8(f), the width dimension W8 needs to be narrowed. For this reason, by keeping the magnetic material M14 within the thickness of the membrane 2, the width dimension W8 can be widened, and thus the region in which magnetic force is generated can be widened. On the other hand, in the magnetic materials M15 and M16 shown in Figures 8(e) and 8(f), the magnetic materials M15 and M16 can be formed to be thicker.This makes it possible to strengthen the magnetic force generated in the thickness direction of magnetic materials M15 and M16.

[0051] The sidewall surface S of the magnetic material M17 shown in Figure 9(a) is an inverse tapered surface, and the sidewall surface S of the magnetic material M18 is a vertical surface. The shape of the sidewall surface S can be appropriately changed depending on the manufacturing method of the magnetic material. By forming the sidewall surface S as an inverse tapered surface, as in the magnetic material M17 in Figure 9(a), the width dimension W8 of the magnetic material M17 that appears on the surface on the first surface 2a side can be made wider. Therefore, in order to form a magnetic material that is deeply embedded so as to extend beyond the membrane 2 to the insulating layer 3 and the support substrate 4, the width dimension W8 can be increased by forming it as an inverse tapered surface. As shown in Figure 9(b), multiple magnetic materials M19 and M20 may be embedded adjacent to each other in the boundary region 11 between each cell region 6. Adjacent magnetic materials M19 and M20 may be in contact in part or separated. Figure 9(c) is an example in which the second layer 8 of the membrane 2 is replaced with a magnetic material M21. Thus, the membrane 2 is formed in a multi-layered structure, and at least one of the inner layers, excluding the outermost layer (first layer 7), may be replaced by the magnetic material M21. This configuration also corresponds to a configuration in which the magnetic material M21 is embedded in the membrane 2. Alternatively, the configuration in Figure 9(d) corresponds to a configuration having a magnetic layer, which will be described later. In Figure 9(d), the first surface 2a of the membrane 2 is an uneven surface (rough surface), and the magnetic material M22 is formed to fill the recesses. As a result, the first surface 2a of the membrane 2 becomes a substantially smooth surface, making it possible to improve the adhesion between the deposition mask 1 and the substrate 20 to be deposited. In Figure 9(d), the magnetic material M22 may extend thinly not only in the recesses but also across the entire first surface 2a of the membrane 2. As shown in Figure 9(e), the magnetic material M22 may be embedded in grooves 30 formed on the first surface 2a of the membrane 2 to fill the magnetic material M22, as in Figure 6, and may also extend thinly to the first surface 2a between the grooves 30. In Figures 9(d) and 9(e), the thickness of the magnetic materials M21 and M22 extending thinly across the first surface 2a is preferably 0.1 μm or more and 7 μm or less, more preferably less than 5.5 μm, and even more preferably 200 nm or less.

[0052] Furthermore, as shown in Figure 10(a), the magnetic material M23 may be embedded in the support substrate 4. In Figure 10(a), the magnetic material M23 is embedded from the back surface 4a of the support substrate 4 toward the membrane 2. Therefore, the magnetic material M is exposed on the back surface 4a of the support substrate 4. Because the support substrate 4 is thick, embedding the magnetic material M23 in the support substrate 4 allows for a larger deposition area of ​​the magnetic material M23, thereby increasing the magnetic force.

[0053] Furthermore, in the configuration in which the magnetic material M is formed on the support substrate 4, instead of embedding the magnetic material M in the support substrate 4, the magnetic layer M24 can be coated on the outer peripheral surface 4b of the support substrate 4, as shown in Figure 10(b). Alternatively, as shown in Figure 10(a), the magnetic material M23 may be embedded in the support substrate 4, and as shown in Figure 10(b), the magnetic layer M24 may be coated on the outer peripheral surface 4b of the support substrate 4. In the configuration in which the magnetic material M23 and the magnetic layer M24 are formed on the support substrate 4, the thickness of the membrane 2 does not increase and thinness can be maintained, thus maintaining good film formation properties of the vapor-deposited film.

[0054] <Regarding the divided groove 40> In this embodiment, the magnetic material M can be embedded in grooves 40 formed in the membrane 2 or the support substrate 4. As shown in Figures 1 and 6, the magnetic materials M1 to M6 are embedded in the boundary regions 11 between each cell region 6; that is, grooves 40 for embedding the magnetic materials M1 to M6 are formed between each cell region 6. In Figures 9(c)(d), 10, and 22 to 30, grooves 40 are not formed, but as will be described later, grooves 40 may be formed from the viewpoint of minimizing the mask damage area. The grooves 40 are formed by removing at least the outermost layer of the membrane 2. In this specification, grooves 40 formed by removing at least the outermost layer of the membrane 2 between adjacent cell regions 6 are referred to as "divided grooves 40". In some cases, they are simply referred to as "grooves 40", in which case it is a broad concept of grooves for embedding magnetic materials M, including divided grooves 40.

[0055] The dividing groove 40 is formed by removing the outermost layer (second layer 7) of the membrane 2 so that adjacent cell regions 6 are not continuous at least at the outermost layer (for example, the second layer 7 shown in Figures 8 and 9). The dividing groove 40 may penetrate the membrane 2. In this case, the bottom surface of the dividing groove 40 reaches the insulating layer 3. Thus, the dividing groove 40 may be formed to be less than or equal to the total thickness of the membrane 2. The effect of providing the dividing groove 40 is that by dividing the cell regions 6 with the dividing groove 40, even if a crack occurs in the deposition mask 1, the problem of the crack extending to the outer peripheral edge 2c of the deposition mask 1 can be suppressed, and the mask damage area can be kept to a small area. To effectively suppress the mask surface loss rate, it is preferable to partition each cell region 6 with the dividing groove 40. This is shown in Figures 1 and 6(a) to (e). As shown in Figures 1 and 6(a), the dividing groove 40 is formed so as to surround the cell region 6. In this case, the dividing grooves 40 are not continuous and may be formed intermittently as shown in Figure 1 and Figures 6(d) and (e). Alternatively, the dividing grooves 40 are formed to intersect between the cell regions 6, as shown in Figures 6(a) and (b), and it is particularly preferable that they be formed in a grid pattern. In Figure 6(c), multiple cell regions 6 are grouped together and partitioned by the dividing grooves 40.

[0056] In this embodiment, the magnetic material M is embedded in at least a portion of the divided groove 40. That is, as shown in Figure 11, the magnetic material M may be embedded while leaving a portion of the divided groove 40 as a space 40d. For example, by appropriately adjusting the arrangement of the mask (not shown) when embedding the magnetic material M, the formation range of the magnetic material M in relation to the divided groove 40 can be adjusted. Also, by embedding the magnetic material M in a portion of the divided groove 40, the amount of magnetic material M protruding from the divided groove 40 can be reduced. For example, in Figure 6(e), multiple divided grooves 40 are formed in multiple rows between adjacent cell regions 6. The magnetic material M5 is embedded in each divided groove 40. In this case, the magnetic material M5 does not have to be embedded in all of the divided grooves 40. In the configuration of Figure 6(e), the area of ​​the magnetic material M5 can be effectively increased, the adhesion force can be partially increased, and the mask damage area can be effectively suppressed.

[0057] As shown in Figure 12, for example, the magnetic material M embedded in the membrane 2 may be formed with a cross-sectional shape having a curved surface 26c from the bottom surface 26a to the side wall surface 26b. In other words, the groove 40 for embedding the magnetic material M26 is formed with a cross-sectional shape having a curved surface 40c from the bottom surface 40a to the side wall surface 40b. The entire groove from the bottom surface 40a to the side wall surface 40b may also be formed with a curved surface. By having a curved surface 40c in the groove 40 in this way, the magnetic material M can be embedded in the groove 40 without any gaps, or with the gaps minimized.

[0058] Figure 13 shows an enlarged view of the cell region 6 and its surroundings as shown in Figure 1. In the processing of the membrane 2, the opening 10 can be formed by dry etching, and the dividing groove 40 can be formed by dry etching or wet etching.

[0059] Furthermore, the support substrate 4 formed on the second surface 2b side of the membrane 2 is composed of two configurations: one in which it is formed by dividing it into sections for each cell region 6 (referred to as "Pattern A"), as shown in Figure 13A, and another in which at least some of the support substrate 4 and insulating layer 3 that divide it into sections for each cell region 6 are removed from Figure 13A (referred to as "Pattern B").

[0060] Next, the configuration of the support portion 15 that supports the membrane 2 will be described. In Figure 13A, as explained in Figures 8 and 9, the membrane 2 has a laminated structure of a second layer 7 and a first layer 8, and the support portion 15 is located on the back surface of the boundary region 11 between each cell region 6 and on the back surface of the outer peripheral region 13. On the other hand, in Figure 13B, the support portion 15 is located only on the back surface of the outer peripheral region 13 and not on the back surface of the boundary region 11. The configuration in Figure 13B cannot be realized if the membrane 2 has a single-layer structure (because the groove 40 penetrates the membrane 2, a part that supports each cell region 6 on the second surface 2b side is essential), so as in Figure 13B, the membrane 2 is formed with a laminated structure of the outermost second layer 7 and the first layer 8 on its back surface, the groove 40 is formed by removing the second layer 7 and leaving the first layer 8 as is, and the magnetic material M is embedded in the groove 40. Note that the magnetic material M does not need to be embedded in all of the grooves 40.

[0061] It is preferable that the back surface 4a of the support substrate 4, as shown in Figures 13A and 13B, is formed with the same material layer as the second layer 7, which is the outermost surface of the membrane 2. For example, if the second layer 7 is a SiN layer, a SiN layer is formed on the back surface 4a of the support substrate 4, and if the second layer 7 is an SiO2 layer, an SiO2 layer is formed on the back surface 4a of the support substrate 4. This helps to maintain stress balance and suppress the occurrence of warping and other issues. These are types of back layers, which will be described later.

[0062] <Effects of the vapor deposition mask 1 in the first embodiment> In this embodiment, the magnetic material M is embedded in at least one of the membrane 2 or the support substrate 4. As a result, as shown in Figure 5, when the substrate 20 to be deposited and the deposition mask 1 are placed in the deposition apparatus, they can be brought into close contact by magnetic force. In this embodiment, because the magnetic material M is embedded in the membrane 2 or the support substrate 4, the thickness of the membrane 2 does not increase, and its thinness can be maintained. As a result, the positional accuracy of the deposited film 17 can be improved, and the amount of deposited material 14 adhering to the side wall surface of the opening 10 can be reduced, and the opening width W5 can be maintained at a predetermined width. As a result, the width dimension W6 of the deposited film 17 can be formed to be within a predetermined width range, and the film formation performance of the deposited film 17 can be improved.

[0063] In addition, in this embodiment, by separating the cell regions 6 with dividing grooves 40, even if a crack occurs in a cell region 6, the crack can be contained within the cell region 6 where the crack occurred or within a predetermined area, thereby minimizing the area of ​​mask damage caused by the crack.

[0064] Furthermore, by using the divided grooves 40 to embed the magnetic material M in at least a portion of the divided grooves 40, the adhesion between the substrate 20 to be deposited and the deposition mask 1, as well as the film formation performance of the deposited film 17, can be improved, and the mask surface loss rate can be suppressed.

[0065] <Method of manufacturing an electronic device according to this embodiment> As shown in Figure 5, the deposition mask 1 is brought into close contact with the substrate 20 to be deposited using magnetic force. At this time, the first surface 2a of the membrane 2 of the deposition mask 1 is oriented toward the substrate 20, and the second surface 2b of the membrane 2 is oriented toward the deposition source 21. Multiple openings 10 are formed in the membrane 2, and for example, the opening width is narrower on the first surface side than on the second surface side. The deposition material (deposited particles) 14 from the deposition source 21 reaches the surface 20a of the substrate 20 to be deposited through the opening 10 of the deposition mask 1, and a deposition film 17 is formed.

[0066] In this embodiment, examples of electronic devices include OLED microdisplay panels, liquid crystal panels, and solar cells, and it is particularly suitable for manufacturing OLED microdisplay panels as organic electronic devices.

[0067] <Regarding the manufacturing method of vapor deposition mask 1> The following describes a method for manufacturing the vapor deposition mask 1, but the method is not limited to these methods.

[0068] Figure 14 is a process diagram showing a first method for manufacturing a vapor deposition mask. In Figure 14A, an SOI substrate 25 consisting of a Si substrate 22 / SiO2 layer 23 / Si layer 24 is prepared. Then, the outermost layer 26 of a membrane is formed on the surface of the SOI substrate 25. The outermost layer 26 is formed of a SiN layer or an SiO2 layer, although this is not limited to the outermost layer 26.

[0069] In Figure 14B, grooves 40 separating the cell regions 6 are formed by etching on the surface of the outermost layer 26 using a mask pattern (not shown). Next, in the process shown in Figure 14C, multiple openings 10 are formed in the cell regions 6 by etching using a mask pattern (not shown). At this time, the openings 10 are formed in the Si layer 24 and the outermost layer 26 of the SOI substrate. Therefore, the membrane 2 is composed of two layers: the Si layer 24 and the outermost layer 26.

[0070] In Figure 14C, the groove 40 is further formed down to the Si layer 24. Then, a magnetic material M is embedded in the groove 40 using a mask (not shown).

[0071] Next, in Figure 14D, the Si substrate 22 and SiO2 layer 23 of the SOI substrate 25 are etched from the back side. At this time, the Si substrate 22 and SiO2 layer 23 facing the cell region 6 of the membrane 2 are removed, leaving the other areas intact. As a result, the Si substrate 22 / SiO2 layer 23 supporting the membrane 2 remains in the outer peripheral region 13 and boundary region 11 of the membrane 2.

[0072] Alternatively, as shown in Figures 14A to 14E, the magnetic material M may not be embedded in the groove 40 at an intermediate stage, and the magnetic material M may be embedded in the groove 40 using a mask in the final step, as shown in Figure 14F.

[0073] Figure 15 is a process diagram showing a second method for manufacturing the vapor deposition mask. Figures 15A and 15B are the same as those in Figures 14A and 14B.

[0074] Next, in Figure 15C, the opening 10 formed in the Si layer 24 / outermost layer 26 and the outermost layer 26 are covered with a resist layer 50, excluding the groove 40. Then, in Figure 15D, the magnetic material M is deposited using a metal mask by sputtering or the like, and the magnetic material M is embedded in the groove 40.

[0075] Next, in Figure 15E, the Si substrate 22 and SiO2 layer 23 of the SOI substrate 25 are etched from the back side. At this time, the Si substrate 22 and SiO2 layer 23 facing the cell region 6 of the membrane 2 are removed, leaving the other areas. This forms the Si substrate 22 and SiO2 layer 23 in the outer peripheral region 13 and boundary region 11 of the membrane 2. Then, the resist layer 50 is removed.

[0076] Figure 16 is a process diagram showing a third method for manufacturing a vapor deposition mask. Figures 16A and 16B are the same as those in Figures 15A and 15B.

[0077] In Figure 16C, a patterned resist layer 52 is formed on the surface of the outermost layer 26, grooves 40 and openings 10 are formed in the Si layer 24 / outermost layer 26, and a magnetic material M is embedded. Then the resist layer 52 is removed.

[0078] In Figure 16D, the resist layer 53 is patterned so that it remains on the magnetic material M embedded in the groove 40. The exposed magnetic material M that is not covered by the resist layer 53 is removed by etching. Then the resist layer 53 is removed. At this time, dry etching or wet etching is used. Then, in Figure 16E, the Si substrate 22 and SiO2 layer 23 of the SOI substrate 25 are etched from the back side. At this time, the Si substrate 22 and SiO2 layer 23 facing the cell region 6 of the membrane 2 are removed, leaving the other areas. As a result, the Si substrate 22 and SiO2 layer 23 are formed in the outer peripheral region 13 and boundary region 11 of the membrane 2.

[0079] Figure 17 is a process diagram showing a fourth method for manufacturing a vapor deposition mask. In Figure 17A, an SOI substrate 25 consisting of a Si substrate 22 / SiO2 layer 23 / Si layer 24 is prepared.

[0080] In Figure 17B, grooves 40 are formed in the outermost Si layer 24 by etching using a mask pattern (not shown). At this time, the grooves 40 are formed from the Si layer 24 to the SiO2 layer 23.

[0081] Next, in Figure 17C, multiple openings 10 are etched into the cell region 6 using a mask pattern (not shown). At this time, the openings 10 are formed only in the Si layer 24. Therefore, in this embodiment, the membrane 2 is composed of a single layer of Si layer 24. Next, a magnetic material M is embedded in the groove 40 using a mask pattern (not shown).

[0082] Next, in Figure 17D, the Si substrate 22 and SiO2 layer 23 of the SOI substrate 25 are etched from the back side. At this time, the Si substrate 22 and SiO2 layer 23 facing the cell region 6 of the membrane 2 are removed, leaving the other areas intact.

[0083] Alternatively, as shown in Figure 17E, from the process shown in Figure 17A, the opening 10 of the cell region 6 and the groove 40 surrounding the cell region 6 may be simultaneously etched using a mask pattern (not shown). As shown in Figure 17E, the outermost Si layer 24 is etched to form the opening 10 and the groove 40. Therefore, in this embodiment, the membrane 2 is composed of a single layer of Si layer 24. Next, a magnetic material M is embedded in the groove 40 using a mask pattern (not shown).

[0084] Next, in Figure 17F, the Si substrate 22 and SiO2 layer 23 of the SOI substrate 25 are etched from the back side. At this time, the Si substrate 22 and SiO2 layer 23 facing the cell region 6 of the membrane 2 are removed, leaving the other areas intact.

[0085] Figure 18 is a process diagram showing a fifth method for manufacturing a vapor deposition mask. In Figure 18A, an SOI substrate 25 consisting of a Si substrate 22 / SiO2 layer 23 / Si layer 24 is prepared. Then, the outermost layer 26 of the membrane 2 is formed on the surface of the SOI substrate 25. The outermost layer 26 is formed of a SiN layer or an SiO2 layer, although this is not limited to the outermost layer 26.

[0086] In Figure 18B, grooves 40 separating the cell regions 6 are formed by etching on the outermost layer 26 using a mask pattern (not shown). Next, in the process shown in Figure 18C, multiple openings 10 are formed in the cell regions 6 by etching using a mask pattern (not shown). As shown in Figure 18C, the openings 10 are formed up to the outermost layer 26, the Si layer 24, and the SiO2 layer 23. Thus, the membrane 2 is formed with a three-layer structure consisting of the SiO2 layer 23, the Si layer 24, and the outermost layer 26. Next, a magnetic material M is embedded in the groove 40 using a mask pattern (not shown).

[0087] Next, in Figure 18D, the Si substrate 22 of the SOI substrate 25 is etched from the back side. At this time, the Si substrate 22 facing the cell region 6 of the membrane 2 is removed, leaving the other areas intact.

[0088] Alternatively, as shown in Figure 18E, from the process shown in Figure 18A, the opening 10 of the cell region 6 and the groove 40 surrounding the cell region 6 may be formed simultaneously by etching using a mask pattern (not shown). As shown in Figure 18E, the opening 10 and groove 40 are formed by etching from the outermost layer 26 down to the SiO2 layer 23. Thus, the membrane 2 is formed with a three-layer structure consisting of the SiO2 layer 23, the Si layer 24, and the outermost layer 26. Next, a magnetic material M is embedded in the groove 40 using a mask pattern (not shown).

[0089] Next, in Figure 18F, the Si substrate 22 of the SOI substrate 25 is etched from the back side. At this time, the Si substrate 22 facing the cell region 6 of the membrane 2 is removed, leaving the other areas intact.

[0090] Figure 19 is a process diagram showing the sixth manufacturing method of the deposition mask 1. In Figure 19A, an SOI substrate 25 consisting of a Si substrate 22 / SiO2 layer 23 / Si layer 24 is prepared.

[0091] In Figure 19B, grooves 40 separating the cell regions 6 are formed on the surface of the Si layer 24 by etching using a mask pattern (not shown). Next, in the process shown in Figure 19C, multiple openings 10 are formed in the cell regions 6 by etching using a mask pattern (not shown). At this time, the openings 10 are formed in both the Si layer 24 and the SiO2 layer 23. As a result, the membrane 2 is formed with a laminated structure of the SiO2 layer 23 and the Si layer 24. Next, a magnetic material M is embedded in the groove 40 using a mask pattern (not shown).

[0092] Next, in Figure 19D, the Si substrate 22 of the SOI substrate 25 is etched from the back side. At this time, the Si substrate 22 facing the cell region 6 of the membrane 2 is removed, leaving the other areas intact.

[0093] Alternatively, as shown in Figure 19E, from the process shown in Figure 19A, the opening 10 of the cell region 6 and the groove 40 surrounding the cell region 6 may be formed simultaneously by etching using a mask pattern (not shown). As shown in Figure 19E, the Si layer 24 and SiO2 layer 23 of the SOI substrate 25 are etched to form the opening 10 and the groove 40. As a result, the membrane 2 is formed with a laminated structure of the SiO2 layer 23 and the Si layer 24. Next, a magnetic material M is embedded in the groove 40 using a mask pattern (not shown).

[0094] Next, in Figure 19F, the Si substrate 22 of the SOI substrate 25 is etched from the back side. At this time, the Si substrate 22 facing the cell region 6 of the membrane 2 is removed, leaving the other areas intact.

[0095] Figure 20 is a process diagram showing the seventh manufacturing method of the deposition mask 1. In Figure 20A, a Si substrate 22 is prepared, and a first layer 27 and a second layer 28 are laminated on the surface of the Si substrate 22. Although not limited to these, for example, the first layer 27 may be formed as an SiO2 layer and the second layer 28 as a SiN layer. Alternatively, the first layer 27 may be formed as a SiN layer and the second layer 28 as an SiO2 layer.

[0096] In Figure 20B, grooves 40 separating the cell regions 6 are formed by etching on the second layer 28, which is the outermost layer, using a mask pattern (not shown). Next, in the process shown in Figure 20C, multiple openings 10 are formed in the cell regions 6 by etching using a mask pattern (not shown). At this time, the openings 10 are formed from the second layer 28 to the first layer 27. As a result, the membrane 2 is formed with a laminated structure of the first layer 27 and the second layer 28. Next, a magnetic material M is embedded in the groove 40 using a mask pattern (not shown).

[0097] Next, in Figure 20D, the Si substrate 22 is etched from the back side. At this time, the Si substrate 22 facing the cell region 6 of the membrane 2 is removed, leaving the other areas intact.

[0098] Alternatively, as shown in Figure 20E, from the process in Figure 20A, the opening 10 of the cell region 6 and the groove 40 surrounding the cell region 6 may be formed simultaneously by etching using a mask pattern (not shown). As shown in Figure 20E, the opening 10 and groove 40 are formed by etching from the second layer 28 to the first layer 27. As a result, the membrane 2 is formed with a laminated structure of the first layer 27 and the second layer 28. Next, a magnetic material M is embedded in the groove 40 using a mask pattern (not shown).

[0099] Next, in Figure 20F, the Si substrate 22 is etched from the back side. At this time, the Si substrate 22 facing the cell region 6 of the membrane 2 is removed, leaving the other areas intact.

[0100] Figure 21 is a process diagram showing the eighth manufacturing method of the deposition mask 1. In Figure 21A, a Si substrate 22 is prepared, and the outermost layer 29 is laminated onto the surface of the Si substrate 22. Although not limited, for example, the outermost layer 29 is formed of a SiN layer.

[0101] In Figure 21B, grooves 40 separating the cell regions 6 are formed by etching on the outermost layer 29 using a mask pattern (not shown), and then, as shown in Figure 21C, multiple openings 10 are formed in the cell regions 6 by etching. Alternatively, the grooves 40 in Figure 21B and the openings 10 in Figure 21C may be formed simultaneously. As a result, the membrane 2 is formed as a single-layer structure consisting only of the outermost layer 29. Next, a magnetic material M is embedded in the groove 40 using a mask pattern (not shown).

[0102] Next, in Figure 21D, the Si substrate 22 is etched from the back side. At this time, the Si substrate 22 facing the cell region 6 of the membrane 2 is removed, leaving the other areas intact.

[0103] Although not shown in Figures 14-21, a back layer 72 may be formed as shown in Figures 22-28 and 30, which will be described later. In Figures 22-28 and 30, the back layer 72 was a multi-layered structure including, for example, a second back layer 71 and a first back layer 70, but it may also be a single-layer structure. That is, the back layer 72 is a layer formed on the side of the support substrate 4 (22) opposite to the membrane 2. Examples of the configuration of the back layer 72 include, in order from the support substrate 4 side, SiN, SiO2, SiO2 / SiN, SiN / SiO2, etc. When a back layer 72 is present, the back layer 72 may also be considered a support part together with the support substrate 4, etc.

[0104] In this embodiment, a film can be formed on the surface of the SOI substrate 25 or the Si substrate 22, and an SiO2 layer or SiN layer including at least the outermost layer of the membrane 2 can be formed by plasma CVD (PE-CVD).

[0105] In the above, the groove 40 is formed before the opening 10 is formed, or the groove 40 is formed at the same time as the opening 10. However, the groove 40 can also be formed after the opening 10 is formed.

[0106] When forming grooves 40 and openings 10 simultaneously, a large mask pattern including the patterns of grooves 40 and openings 10 can be used to form the divided grooves 40 and openings 10 at once, thereby improving manufacturing efficiency. Alternatively, a mask of the unit pattern of a cell region 6 and the surrounding groove (divided groove) 40 can be used to form the patterns of divided grooves 40 and openings 10 for each cell region 6.

[0107] On the other hand, if the grooves 40 and the openings 10 are formed in separate processes, the grooves 40 and the openings 10 can be formed separately using a mask with the groove pattern 40 and a mask with the opening pattern 10. In this case, the groove depth of the grooves 40 and the depth (height) of the openings 10 can be changed by changing the etching conditions.

[0108] <Regarding the vapor deposition mask of the second embodiment> In the above-described embodiment, the vapor deposition mask 1 had a configuration in which the magnetic material M was embedded in specific locations. However, the vapor deposition mask of the second embodiment described below has a structure in which the magnetic layer is embedded in a layered manner in specific locations on the vapor deposition mask. The magnetic layer is an example of a magnetic material. In other words, the vapor deposition mask of the second embodiment includes the following configuration. (1) The membrane 2 has a first surface 2a facing the substrate 20 to be deposited on, and a second surface 2b located on the opposite side of the first surface 2a and facing the deposition source 21, and has a plurality of openings penetrating between the first surface and the second surface. (2) The first surface 2a of the deposition mask or the intermediate layer has a magnetic layer. (3) The membrane 2 has a Si-containing layer containing Si, and the total thickness of the membrane 2 is 0.3 μm or more and 20 μm or less. (4) The total thickness of the magnetic layer ML shall be 0.1 μm or more and 7 μm or less.

[0109] Figures 22 to 30 are cross-sectional views showing an example of a vapor deposition mask according to the second embodiment. The vapor deposition mask 60 shown in Figure 22 has a laminated structure consisting of a membrane 2, an insulating layer 3, and a support substrate 4. The support substrate 4 supports the membrane 2 on the vapor deposition source side.

[0110] As shown in Figure 22, a magnetic layer ML1 is formed on the back surface 4a of the support substrate 4, and a first back surface layer 70 and a second back surface layer 71, which become the back surface layer 73, are further laminated on the back surface of the magnetic layer ML1. In the configuration shown in Figure 22, the membrane 2 has a laminated structure of a second layer 7 and a first layer 8. Therefore, the deposition mask 60 shown in Figure 22 has a structure in which the layers are laminated in the following order from the deposition source side (back surface) to the substrate to be deposited on side (front surface): back surface layer 73 (second back surface layer 71 / first back surface layer 70) / magnetic layer ML1 / support substrate 4 / insulating layer 3 / membrane 2 (first layer 8 / second layer 7).

[0111] The membrane, for example, has a second layer 7 which is a SiN layer and a first layer 8 which is a Si layer. Preferably, the second layer 7 and the second back layer 71 shown in Figure 22 are formed from the same material layer. Although not limited, for example, the second layer 7 and the second back layer 71 are SiN layers. Also, although not limited, the first back layer 70 is, for example, an SiO2 layer. As a result, the arrangement of the material layers above and below the support substrate 4 becomes approximately symmetrical, maintaining stress balance and suppressing the occurrence of warping and other issues.

[0112] The magnetic layer ML1 can be formed from the same material as the magnetic material M described above. That is, the magnetic layer ML1 is composed of a magnetic metallic material. While not limited to these, examples include iron, nickel, cobalt, and alloys containing these materials, such as ferritic stainless steel (SUS430, etc.), martensitic stainless steel (SUS410, etc.), Invar (iron-nickel alloy), and Super Invar (iron-nickel-cobalt alloy).

[0113] As shown in Figure 22, the magnetic layer ML1 is formed in the intermediate layer of the deposition mask 60. The term "intermediate layer" does not limit the placement location as long as it is located in the middle of the deposition mask 60, excluding the surface facing the substrate to be deposited (front side) and the surface facing the deposition source (back side). In Figure 22, the magnetic layer ML is located between the support substrate 4 and the first back layer 70 and is not exposed on the back surface of the support substrate 4. Also in Figure 22, the laminated structure of the insulating layer 3, support substrate 4, and back layer 73 (first back layer 70, second back layer 71), excluding the membrane 2, can be defined as the "support section," and the magnetic layer ML is located in the middle of the support section, excluding the back surface (the surface facing the deposition source). Note that the magnetic layer ML1 may be part of the back layer 73 as long as it is located in the middle of the support section, excluding the back surface (the surface facing the deposition source).

[0114] The deposition mask 61 shown in Figure 23 is a single-layer structure of the membrane 2 of the deposition mask 60 shown in Figure 22, while the other layers are the same in both. Although not limited to this, the membrane 2 shown in Figure 23 is formed of a SiN layer. That is, as shown in Figures 22 and 23, the magnetic layer ML1 may be formed within the support portion. By forming the magnetic layer ML1 in the support portion, the thickness of the magnetic layer ML1 can be increased while keeping the total thickness of the membrane 2 down, thereby increasing the magnetic force of the deposition mask 61 and improving the adhesion between the deposition mask 61 and the substrate to be deposited.

[0115] The deposition mask 62 shown in Figure 24 has a configuration in which a magnetic layer ML2 is added to the membrane 2 of the deposition mask 60 shown in Figure 22. That is, as shown in Figure 24, the magnetic layer ML2 is placed between the second layer 7 and the first layer 8. The other layers are the same in both.

[0116] In the embodiment shown in Figure 24, magnetic layers ML1 and ML2 are provided on both the membrane 2 and the support substrate 4. The deposition mask 63 shown in Figure 25 is obtained by removing the first layer 8 from the deposition mask 62 shown in Figure 24, and the membrane 2 is composed of a magnetic layer ML2 and a second layer 7. The second layer 7 is, for example, a SiN layer. In Figure 25, the magnetic layer ML2 is arranged on the back surface of a single-layer membrane 2. When the magnetic layer ML2 is formed on the membrane 2, it may be considered as a configuration in which the membrane 2 is stacked. That is, multiple layers of magnetic layers ML1 and ML2 may be formed within the deposition mask 62. By forming multiple layers of magnetic layers ML1 and ML2, the magnetic force can be further increased, and the adhesion between the deposition mask 62 and the substrate to be deposited is further improved.

[0117] The deposition mask 64 shown in Figure 26 has the same configuration as the deposition mask 62 shown in Figure 24, except that the magnetic layer ML1 is removed, while the other layers are the same. The deposition mask 65 shown in Figure 27 has the same configuration as the deposition mask 64 shown in Figure 26, except that the first layer 8 is removed. In other words, the deposition masks 64 and 65 shown in Figures 26 and 27 do not have the magnetic layer ML1 on the support substrate 4, and the magnetic layer ML2 is placed only on the membrane 2. By forming the magnetic layer ML2 on the membrane 2, the distance between the magnetic layer ML2 and the substrate to be deposited is shortened, thereby increasing the adhesion between the two.

[0118] The vapor deposition mask 66 shown in Figure 28 has the same configuration as the vapor deposition mask 64 shown in Figure 26, with the support substrate 4, first back layer 70, and second back layer 71 removed, while the other layers remain the same. That is, the vapor deposition mask 66 shown in Figure 28 has a membrane 2 and an insulating layer 3, and the membrane 2 contains a magnetic layer ML2. The vapor deposition mask 67 shown in Figure 29 has the same configuration as the vapor deposition mask 66 shown in Figure 28, with the first layer 8 removed, while the other layers remain the same. Thus, the vapor deposition masks 66 and 67 shown in Figures 28 and 29 do not have a support substrate. If a support substrate is required, it can be prepared separately and attached to the vapor deposition masks 66 and 67. Also, the insulating layer 3 may be removed from the vapor deposition masks 66 and 67 in Figures 28 and 29.

[0119] In the deposition masks shown in Figures 22 to 29, the magnetic layer ML is placed in the intermediate layer of each deposition mask, but it may also be placed on the first surface 2a of the deposition mask. For example, in each deposition mask shown in Figures 24 to 29, either magnetic layer ML1 or ML2 may be placed on the first surface 2a (the surface of the membrane 2 on the substrate side), or a new magnetic layer ML may be placed on the first surface 2a along with magnetic layers ML1 and ML2.

[0120] Furthermore, in the deposition masks shown in Figures 22 to 29, the membrane 2 has a Si-containing layer containing Si, and the total thickness of the membrane 2 is 0.3 μm or more and 20 μm or less, more preferably 10 μm or less. The total thickness of the magnetic layer ML is 0.1 μm or more and 7 μm or less, more preferably less than 5.5 μm. "Total thickness of magnetic layer ML" refers to the sum of the thicknesses of the magnetic layers ML if multiple layers of magnetic layer ML are provided. The total thickness of the membrane 2 can be 0.5 μm or more. Also, the total thickness of the membrane 2 can be 7 μm or less. Also, the total thickness of the magnetic layer ML can be 7 μm or less. In the second embodiment, similar to the first embodiment in which a magnetic material M is embedded, the deposition mask can be brought into close contact with the substrate 20 to be deposited on the deposition apparatus by magnetic force, as shown in Figure 5. In this embodiment, even when the magnetic layer ML is placed on the support substrate 4, or when the membrane 2 has a magnetic layer ML, the total thickness of the membrane is limited to 0.3 μm or more and 20 μm or less. Within this total thickness, the magnetic layer is formed with a total thickness of 0.1 μm or more and 7 μm or less. Therefore, the adhesion to the substrate to be deposited on can be improved without increasing the membrane thickness, and the deposited film can be formed with a desired width, thereby improving film formation performance. For example, as shown in Figure 24, when magnetic layers ML1 and ML2 are arranged on both the support substrate 4 and the membrane 2, the thickness of magnetic layer ML2 arranged on the membrane 2 can be made thinner than the thickness of magnetic layer ML1 on the support substrate 4. Furthermore, the deposition mask 68 shown in Figure 30 is a configuration in which the magnetic layer ML2 is removed from the cell region 6, which consists of a collection of multiple openings 10, in the deposition mask 63 shown in Figure 25. With these configurations, the membrane 2 can be made thinner while maintaining adhesion by the magnetic layers ML1 and ML2, and the film deposition performance can be effectively improved. In Figure 30, the width of magnetic layer ML2 is larger than the width of the support portion and is approximately the same width as the width of the first layer 7, but it is not limited to this, and may have the same width as each layer constituting the support portion.

[0121] This disclosure is not limited to the embodiments described above, and various modifications are possible. For example, the magnetic material M may be embedded in the membrane 2 from the second surface 2b to the middle of the first surface 2a.

[0122] Furthermore, although embodiments and modifications have been described, other embodiments may be combinations of the above embodiments and modifications, either entirely or partially. For example, the configuration in which the magnetic material M of the first embodiment is embedded may be combined with the configuration in which the magnetic layer ML of the second embodiment is laminated.

[0123] Furthermore, the present invention is not limited to the embodiments and modifications described above, and may be modified, substituted, or altered in various ways without departing from the spirit of the technical idea. Moreover, if the technical idea can be realized in a different way by advances in the art or by other derived arts, it may be implemented by that method. Accordingly, the claims cover all embodiments that may fall within the scope of the technical idea. [Examples]

[0124] The effects of the present invention will be explained below with reference to examples and comparative examples of the present invention. However, the present invention is not limited in any way by the following examples.

[0125] <First Embodiment: Experiment on Magnetic Material Embedding> Experiments were conducted to confirm the mask damage suppression effect and adhesion to the substrate to be deposited using the samples in Experimental Examples 1-11 and Comparative Examples 1 and 2 shown below. Table 1 below shows the membrane configuration, presence or absence of segmented grooves, and support structure for each sample. In all samples, the SiN thickness was standardized to approximately 0.5 μm, and the SiO2 thickness was standardized to 1 μm. Furthermore, the Si thickness constituting the membrane was varied from approximately 3 μm to 20 μm.

[0126] [Table 1]

[0127] (Experimental Example 1) The deposition mask for Experimental Example 1 was formed using the manufacturing method shown in Figure 14. The membrane for Experimental Example 1 had a layered structure of Si / SiN layers. In Experimental Example 1, two samples were prepared as the back surface patterns of the support portion: pattern A in Figure 13A and pattern B in Figure 13B.

[0128] (Experimental Example 2) The deposition mask for Experimental Example 2 was formed using the manufacturing method shown in Figure 14. The membrane for Experimental Example 2 had a laminated structure of Si layer / SiO2 layer. In Experimental Example 1, two samples were prepared as the back surface pattern of the support portion: pattern A in Figure 13A and pattern B in Figure 13B.

[0129] (Experimental Example 3) The deposition mask for Experimental Example 3 was formed using the manufacturing method shown in Figure 17. The membrane for Experimental Example 2 had a single-layer Si structure. For Experimental Example 3, a sample of pattern A shown in Figure 13A was prepared as the back surface pattern of the support portion.

[0130] (Experimental Example 4) The deposition mask for Experimental Example 4 was formed using the manufacturing method shown in Figure 18. The membrane for Experimental Example 4 had a laminated structure of SiO2 layer / Si / SiN layer. For Experimental Example 4, two samples were prepared as the back surface pattern of the support portion: pattern A in Figure 13A and pattern B in Figure 13B.

[0131] (Experimental Example 5) The deposition mask for Experimental Example 5 was formed using the manufacturing method shown in Figure 18. The membrane for Experimental Example 5 had a laminated structure of SiO2 layer / Si / SiO2 layer. For Experimental Example 5, two samples were prepared as the back surface pattern of the support portion: pattern A in Figure 13A and pattern B in Figure 13B.

[0132] (Experimental Example 6) The deposition mask for Experimental Example 6 was formed using the manufacturing method shown in Figure 19. The membrane for Experimental Example 6 had a laminated structure of SiO2 layer / Si layer. For Experimental Example 6, two samples were prepared as the back surface pattern of the support portion: pattern A in Figure 13A and pattern B in Figure 13B.

[0133] (Experimental Example 7) The deposition mask for Experimental Example 7 was formed using the manufacturing method shown in Figure 20. The membrane for Experimental Example 7 had a laminated structure of SiO2 layer / SiN layer. For Experimental Example 7, two samples were prepared as the back surface pattern of the support portion: pattern A in Figure 13A and pattern B in Figure 13B.

[0134] (Experimental Example 8) The deposition mask for Experimental Example 8 was formed using the manufacturing method shown in Figure 20. The membrane for Experimental Example 8 had a laminated structure of SiN layer / SiO2 layer. For Experimental Example 8, two samples were prepared as the back surface pattern of the support portion: pattern A in Figure 13A and pattern B in Figure 13B.

[0135] (Experimental Example 9) The deposition mask for Experimental Example 9 was formed using the manufacturing method shown in Figure 21. The membrane in Experimental Example 8 had a single-layer structure of SiN. In Experimental Example 8, the back surface pattern of the support portion was pattern A in Figure 13A.

[0136] (Experimental Example 10) The deposition mask for Experimental Example 10 was formed using the manufacturing method shown in Figure 14. The membrane for Experimental Example 10 had a laminated structure of Si layer / SiN layer. For Experimental Example 10, two samples were prepared as the back surface pattern of the support portion: pattern A in Figure 13A and pattern B in Figure 13B. Note that the total thickness of the membrane in Experimental Example 10 was thinner than that of Experimental Example 1. This is because the Si layer was 5 μm thick in Experimental Example 1, while the Si layer was adjusted to 3 μm thick in Experimental Example 10.

[0137] (Experimental Example 11) The deposition mask for Experimental Example 11 was formed using the manufacturing method shown in Figure 20. The membrane for Experimental Example 11 had a SiN layer / Si layer laminated structure. For Experimental Example 11, two samples were prepared as the back surface pattern of the support portion: pattern A in Figure 13A and pattern B in Figure 13B.

[0138] In Experimental Examples 1 to 11, a segmented groove 40, as shown in Figure 1, was formed, and a magnetic material M1 was embedded in the segmented groove 40. Nickel was used for the magnetic material M1. Furthermore, in Experimental Examples 1 to 3, 4 to 6, and 7 to 9, similar results were obtained when the combination of membrane and support substrate configurations shown in Table 1 was changed.

[0139] (Comparative Example 1) In the configuration of Experimental Example 1, there are no segmented grooves and no embedded magnetic material. (Comparative Example 2) In the configuration of Experimental Example 7, there are no segmented grooves and no embedded magnetic material.

[0140] (Experiments to confirm the adhesion between the substrate to be deposited and the deposition mask in each sample) Furthermore, the adhesion between the substrate to be deposited and the deposition mask in the film deposition apparatus was investigated. A circle (○) indicated no gap between the substrate and each sample, while a cross (×) indicated a gap. The results are shown in Table 2 below.

[0141] (Experiments to confirm the mask damage suppression effect in each sample) Each sample was placed on a support base with its outer periphery, and a weight was placed in the center of the membrane. The membrane was then intentionally bent to induce cracking. The weight was increased in 2g increments until cracking occurred.

[0142] The presence of a crack was visually confirmed, and the crack's origin was observed using a SEM (Regulus8220, Hitachi High-Tech). The extent to which the crack spread from its starting point to the cell region was then determined. The maximum number of cell regions affected (number of damaged cell regions) was calculated. The results are shown in Table 2 below.

[0143] [Table 2]

[0144] <Second Embodiment: Experiment on Magnetic Layer Lamination> Experiments were conducted to confirm the adhesion to the substrate to be deposited and the film formation performance of the deposited film using the samples shown in Experimental Examples 12-17 and Comparative Examples 3-5 below. The magnetic layer used in each example and comparative example was Ni. Table 3 below shows the membrane configuration, total membrane thickness, total magnetic layer thickness, and support structure for each sample.

[0145] [Table 3]

[0146] (Experimental Example 12) The membrane in Experimental Example 12 had a layered structure of SiN layer / magnetic layer / Si. The total thickness of the membrane was 3.6 μm, and the total thickness of the magnetic layer was 0.1 μm.

[0147] (Experimental Example 13) The membrane in Experimental Example 13 had a single-layer structure of SiN. In Experimental Example 13, a magnetic layer was interposed in the middle of the support structure. The total thickness of the membrane was 0.5 μm, and the total thickness of the magnetic layer was 0.5 μm.

[0148] (Experimental Example 14) The membrane in Experimental Example 14 had a laminated structure of SiN layer / magnetic layer. In Experimental Example 14, a magnetic layer was also interposed in the middle of the support section. The total thickness of the membrane was 1 μm, and the total thickness of the magnetic layer was 1 μm.

[0149] (Experimental Example 15) The membrane in Experimental Example 15 had a laminated structure of Si layer / magnetic layer. No support structure was provided in Experimental Example 15. The total thickness of the membrane was 7 μm, and the total thickness of the magnetic layer was 2 μm.

[0150] (Experimental Example 16) The membrane in Experimental Example 16 had a laminated structure of SiN layer / magnetic layer. No support structure was provided in Experimental Example 16. The total thickness of the membrane was 3.5 μm, and the total thickness of the magnetic layer was 3 μm.

[0151] (Experimental Example 17) The membrane in Experimental Example 17 had a laminated structure of Si layer / SiO2 layer. In Experimental Example 17, a magnetic layer was interposed in the middle of the support structure. The total thickness of the membrane was 4 μm, and the total thickness of the magnetic layer was 5 μm.

[0152] (Experimental Example 18) The membrane in Experimental Example 18 had a layered structure of SiN layer / magnetic layer / Si layer. The total thickness of the membrane was 11.5 μm, and the total thickness of the magnetic layer was 6 μm.

[0153] (Experimental Example 19) The membrane in Experimental Example 19 had a laminated structure of Si layer / magnetic layer / SiN layer. In Experimental Example 19, a magnetic layer was also interposed in the middle of the support section. The total thickness of the membrane was 12.5 μm, and the total thickness of the magnetic layer was 7 μm.

[0154] (Comparative Example 3, Comparative Example 4) Comparative Example 3 had a configuration without a magnetic layer. Comparative Example 4 had a configuration in which a magnetic layer was interposed in the membrane. However, in Comparative Example 4, the total thickness of the membrane was increased to 20.5 μm.

[0155] For each sample shown in Table 2, an experiment was conducted to confirm the adhesion between the substrate to be deposited and the deposition mask. A circle (○) indicated no gap between the substrate and the sample, while a cross (×) indicated a gap.

[0156] Furthermore, the film formation performance of the deposited film on the substrate was evaluated. Specifically, a score of ○ was given if the width of the deposited film was 80% or more of the aperture width, a score of △ was given if it was 70% or more but less than 80%, and a score of × was given if it was less than 70%. In other words, it was judged that the film was effectively formed if the width of the deposited film was 70% or more of the aperture width. The experimental results are shown in Table 4 below.

[0157] [Table 4]

[0158] As shown in Table 4, experimental examples 12 to 19 all received a ○ for adhesion and a ○ or △ for film formation. In particular, experimental examples 12 to 17 had a thinner total membrane thickness compared to experimental examples 18 and 19, and both adhesion and film formation were ○. On the other hand, comparative example 3 had a × for adhesion, and comparative example 4 had a × for film formation. In other words, comparative example 3 could not obtain magnetic adhesion because it did not have a magnetic layer. Also, in comparative example 4, because the membrane was thick, the width dimension of the deposited film was smaller than the desired width dimension, resulting in poor film formation.

[0159] Based on the results of this experiment, and in accordance with Experimental Examples 12-19, the total thickness of the membrane was defined as 0.3 μm to 20 μm, and the thickness of the magnetic layer was defined as 0.1 μm to 7 μm. The magnetic layer was formed on the first surface of the deposition mask (the surface facing the substrate to be deposited), the intermediate layer, or both.

[0160] 1. 60-68: Evaporation mask 2: Membrane 2a: 1st page 2b: 2nd side 2c: Outer edge 3: Insulating layer 4: Support board 6: Cell area 7 :1st layer 8: 2nd layer 9: SOI substrate 10:Aperture 11: Boundary area 12: Cell array area 13:Outer area 15: Support part 16a: Columnar part 16b: Outer frame 17: Vapor-deposited film 20: Deposition substrate 21: Vapor deposition source 22: Si substrate 23:SiO2 layer 24:Si layer 26: Top layer 26a: Bottom 26b: Side wall 26c: Curved surface 40: Ditch (dividing ditch) 40a: Bottom 40b: Sidewall 40c: Curved surface L1, L2: Center lines M, M1~M23, M25, M26: Magnetic bodies ML, ML1, ML2: Magnetic layers M24: Magnetic layer O: Center point

Claims

1. A deposition mask for depositing deposition material from a deposition source onto the surface of a substrate to be deposited, through an opening, The deposition mask has a membrane having a plurality of openings, The deposition mask has a first layer facing the substrate to be deposited on the membrane, a second layer located on the opposite side of the first layer and facing the deposition source, and a magnetic layer between the first layer and the second layer. The membrane has a Si-containing layer containing Si, the total thickness of the membrane is 0.3 μm or more and 20 μm or less, and the total thickness of the magnetic layer is 0.1 μm or more and 7 μm or less. The membrane has a single-layer or multi-layer structure having a SiN layer. A vapor deposition mask characterized by the following features.

2. The magnetic layer is formed having a magnetic metal material. The vapor deposition mask according to feature 1.

3. The deposition mask further comprises a support substrate that supports the membrane on the deposition source side, The support substrate has a single-layer or multi-layer structure with a Si-containing layer. The membrane or the support substrate has a magnetic layer, A vapor deposition mask according to claim 1 or 2.

4. The deposition mask further comprises a support substrate that supports the membrane on the deposition source side, The support substrate has a single-layer or multi-layer structure with a Si-containing layer. The membrane and the support substrate have a magnetic layer. A vapor deposition mask according to claim 1 or 2.

5. Between the substrate to be deposited and the deposition source, using the deposition mask described in claim 1, The deposition material is deposited onto the surface of the substrate to be deposited through the opening. A method for manufacturing an electronic device characterized by the following:

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