Washing device

Abstract

To reduce a level of warping to an upper direction in an outer peripheral part of a wafer caused by cleaning water from a lower side cleaning nozzle when executing spinner cleaning to the wafer.SOLUTION: A cleaning device for cleaning a wafer, comprises: a holding table that contains a holding surface with a predetermined diameter, and can be rotated to a circumference of a predetermined rotational shaft; a rotational drive source that rotates the holding table to the circumference of the predetermined rotational shaft; a fluctuation arm that can be fluctuated so that a tip end part is crossed to a holding surface in an upper direction of the holding surface; a fluctuation cleaning nozzle that is provided to the tip end part of the fluctuation arm, and supplies cleaning water toward the holding surface; and a lower side cleaning nozzle that is arranged to an outer side from the holding table in a radial diameter of the holding table, and to a lower direction from the holding surface. The lower side cleaning nozzle contains an ultrasonic vibrator, and can supply the cleaning water to which an ultrasonic vibration is applied toward a lower surface of an outer peripheral part deviated to the outer side from the holding surface of the wafer held by the holding table.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a cleaning apparatus for cleaning a wafer.

Background Art

[0002] A wafer such as a semiconductor wafer may be processed in a state of a wafer unit supported by a metal annular frame via a resin dicing tape. For example, a wafer is divided into device units using a cutting device in a state of a wafer unit, and then cleaned using a spinner cleaning apparatus.

[0003] Conventionally, a spinner cleaning apparatus including a disk-shaped spinner table capable of rotating at high speed while sucking and holding a wafer unit on a holding surface, and a cleaning nozzle swingable so as to cross the holding surface above the holding surface of the spinner table is known (see, for example, Patent Documents 1 and 2).

[0004] In this spinner cleaning apparatus, the spinner table is rotated at high speed while sucking and holding the wafer unit on the holding surface, and one surface (the surface exposed upward) of the wafer is cleaned with cleaning water such as pure water supplied from the cleaning nozzle.

[0005] By the way, in a case where a groove having a predetermined depth (so-called half-cut groove) is formed on the surface side of a wafer without completely dividing a workpiece using a cutting device, such as in a DBG (Dicing Before Grinding) process, the back surface side of the wafer may be directly sucked and held by a chuck table of the cutting device without using a dicing tape and an annular frame.

[0006] In the DBG process, the workpiece is cut while supplying cutting water such as pure water to a region where a cutting blade contacts the wafer. However, during cutting of the wafer, the back surface side is contaminated because cutting water containing cutting chips adheres to the back surface side of the wafer.

[0007] Therefore, a spinner cleaning apparatus is known that includes an upper cleaning nozzle positioned above the holding surface of the spinner table and capable of swinging across the holding surface, as well as a lower cleaning nozzle positioned below the holding surface for cleaning the outer edge of the back side of the wafer after cutting (see, for example, Patent Document 3).

[0008] However, during spinner cleaning, the upward force from the cleaning water sprayed onto the wafer from the lower cleaning nozzle can lift the outer edge of the wafer, potentially causing it to bend upward. If the outer edge of the wafer bends upward, it may not be properly held in place by the holding surface, potentially causing it to fly off and break. [Prior art documents] [Patent Documents]

[0009] [Patent Document 1] Japanese Patent Publication No. 2006-128359 [Patent Document 2] Japanese Patent Publication No. 2022-28313 [Patent Document 3] Japanese Patent Publication No. 2012-64872 [Overview of the Initiative] [Problems that the invention aims to solve]

[0010] This invention has been made in view of the aforementioned problems, and aims to reduce the degree of upward warping at the outer edge of a wafer caused by cleaning water from a lower cleaning nozzle located below the holding surface when spinner cleaning is performed on the wafer. [Means for solving the problem]

[0011] According to one aspect of the present invention, a cleaning apparatus for cleaning wafers, comprising: a holding table including a holding surface having a predetermined diameter and rotatable about a predetermined axis of rotation; a rotational drive source for rotating the holding table about the predetermined axis of rotation; a swinging arm whose tip is above the holding surface and swings across the holding surface; a swinging cleaning nozzle provided at the tip of the swinging arm for supplying cleaning water toward the holding surface; and a device arranged radially outward from the holding table and below the holding surface. , The system includes an ultrasonic transducer and can supply cleaning water to which ultrasonic vibrations are applied toward the underside of the outer periphery of the wafer held by the holding table that extends beyond the holding surface. The device comprises a lower cleaning nozzle, an upper cleaning nozzle positioned above the lower cleaning nozzle and corresponding to the lower cleaning nozzle in a plan view during wafer cleaning, capable of supplying cleaning water to the upper surface of the outer periphery of the wafer held by the holding table that extends beyond the holding surface, an upper moving mechanism for moving the upper cleaning nozzle along a predetermined direction in the plane, and a lower moving mechanism for moving the lower cleaning nozzle along the predetermined direction, wherein the upper moving mechanism and the lower moving mechanism are provided separately. A cleaning device is provided.

[0014] Preferably, the cleaning device is Before starting the cleaning of the wafer The upper moving mechanism adjusts the position of the upper cleaning nozzle and the lower moving mechanism adjusts the position of the lower cleaning nozzle so that the lower cleaning nozzle and the upper cleaning nozzle face each other in a height direction perpendicular to the predetermined direction. More preferably, the upper moving mechanism moves the upper cleaning nozzle along the height direction in addition to the radial direction. [Effects of the Invention]

[0015] A cleaning apparatus according to one aspect of the present invention comprises a holding table, a swinging arm whose tip is above the holding surface and swings across the holding surface, an upper cleaning nozzle provided at the tip of the swinging arm, and a lower cleaning nozzle positioned radially outward from the holding table and below the holding surface of the holding table.

[0016] The lower cleaning nozzle contains an ultrasonic transducer and supplies cleaning water with ultrasonic vibrations applied toward the underside of the outer periphery of the wafer held on the holding table. Therefore, compared to cleaning the underside of the outer periphery of the wafer with cleaning water without ultrasonic vibrations, the underside of the outer periphery of the wafer can be properly cleaned even with a lower spray pressure of the cleaning water. Consequently, the degree of upward warping of the outer periphery of the wafer can be reduced while properly cleaning the outer periphery of the underside of the wafer. [Brief explanation of the drawing]

[0017] [Figure 1] It is a perspective view of a spinner cleaning device. [Figure 2] It is a side view of a partial cross-section of a spinner cleaning device. [Figure 3] It is a side view of a partial cross-section of a lower cleaning nozzle. [Figure 4] It is a schematic plan view of a spinner cleaning device in the second embodiment. [Figure 5] It is a perspective view of a spinner cleaning device in the third embodiment.

Mode for Carrying Out the Invention

[0018] Referring to the accompanying drawings, an embodiment according to an aspect of the present invention will be described. FIG. 1 is a perspective view of a spinner cleaning device 2, and FIG. 2 is a side view of a partial cross-section of the spinner cleaning device 2 in a state where a wafer 11 is sucked and held by a disk-shaped chuck table (holding table) 4. Note that a part of the spinner cleaning device 2 shown in FIG. 2 is simplified in FIG. 1.

[0019] As described above, the spinner cleaning device 2 is used to clean the wafer 11 (see FIG. 2) after cutting the wafer 11 with a cutting blade (not shown) in a state where the chuck table of the cutting device (not shown) directly contacts the wafer 11 without using a dicing tape and an annular frame (both not shown).

[0020] Such cutting includes, for example, the above-described DBG process and so-called edge trimming for removing a bevel portion (i.e., chamfer portion) formed on one side of the outer peripheral portion 11c of the wafer 11 using a cutting device. However, the cleaning of the wafer 11 using the spinner cleaning device 2 is not limited to the cleaning after these two cutting processes.

[0021] Wafer 11 is a semiconductor wafer having a disk-shaped single-crystal silicon substrate. On the surface 11a of the wafer 11, a plurality of planned division lines (not shown) are set in a grid pattern, and devices (not shown) such as ICs (Integrated Circuits) are formed in each rectangular region partitioned by the plurality of planned division lines.

[0022] Also, beveled portions are formed on the outer periphery on the surface 11a side of the wafer 11 and on the outer periphery on the back surface 11b side located on the side opposite to the surface 11a (see FIG. 2). Note that the substrate constituting the wafer 11 is not limited to a single-crystal silicon substrate. Devices may not be formed on the wafer 11.

[0023] By the way, the spinner cleaning device 2 may be provided in the cutting device as a part of the cutting device, or may be an independent device separate from the cutting device. The spinner cleaning device 2 has a cylindrical cleaning chamber 2a. In FIG. 1, for convenience of explanation, a part of the cleaning chamber 2a is shown with a notch cut out.

[0024] A chuck table 4 is arranged at the central portion in the radial direction of the cleaning chamber 2a. The chuck table 4 has a disk-shaped frame body 6 formed of non-porous ceramics. A disk-shaped concave portion is formed on the upper portion of the frame body 6, and a disk-shaped porous plate 8 formed of porous ceramics is fixed in this concave portion.

[0025] Examples of the material of the ceramics constituting the frame body 6 and the porous plate 8 include alumina (that is, aluminum oxide). The upper surfaces of the frame body 6 and the porous plate 8 are substantially flush with each other and constitute a holding surface 4a having a predetermined diameter 4b (see FIG. 2).

[0026] The diameter 4b of the holding surface 4a is smaller than the diameter 13 of the wafer 11 sucked and held by the holding surface 4a by a predetermined value of 15 mm or more and 25 mm or less (for example, 20 mm). For example, when cleaning a wafer 11 having a diameter 13 of 8 inches (that is, about 200 mm), a chuck table 4 having a diameter 4b of 180 mm is used.

[0027] Therefore, when the wafer 11 is placed on the holding surface 4a such that the center 4c of the holding surface 4a and the center of the front surface 11a (or back surface 11b) of the wafer 11 substantially coincide, the outer peripheral portion 11c of the wafer 11 protrudes outward from the holding surface 4a in the radial direction of the chuck table 4 (for example, the radial direction R1 shown in Figures 1 and 2).

[0028] In Figures 1 and 2, among the numerous radial directions that can be defined in the chuck table 4, the radial direction parallel to the line connecting the central axis of the first rotation axis 12 and the central axis of the cylindrical lower cleaning nozzle 18 is defined as radial direction R1.

[0029] The frame 6 has through holes, grooves, etc. (not shown) formed therein for transmitting negative pressure generated by a suction source (not shown), such as a vacuum pump, to the porous plate 8. When negative pressure is transmitted to the upper surface of the porous plate 8, the wafer 11 placed on the holding surface 4a is held in place by suction.

[0030] A rotational drive source 10, such as a motor, is provided at the bottom of the chuck table 4. The rotational drive source 10 rotates a cylindrical first rotation shaft (a predetermined rotation shaft) 12 at high speed. The rotational drive source 10 includes, for example, a stator that rotates a rotor fixed to a part of the first rotation shaft 12.

[0031] Alternatively, the rotational drive source 10 may include a motor and a drive pulley fixed to the output shaft of the motor. In this case, a driven pulley is fixed to the first rotating shaft 12, and power from the drive pulley is transmitted via an endless belt wound around the drive pulley and the driven pulley.

[0032] The first rotating shaft 12 is connected to the underside of the chuck table 4, and when the rotational drive source 10 is operated, the chuck table 4 rotates around the first rotating shaft 12. A bearing 14 is fixed to the first rotating shaft 12.

[0033] A table cover 16 is fixed to the outer ring (non-rotating part) of the bearing 14. A lower cleaning nozzle 18 is provided on a part of the upper surface of this table cover 16. As shown in Figures 1 and 2, the lower cleaning nozzle 18 is positioned outside the chuck table 4 in the radial direction R1 of the chuck table 4.

[0034] The opening 18a formed in the lower cleaning nozzle 18 is located below the holding surface 4a of the chuck table 4. For example, when cleaning a wafer 11, the distance A1 from the upper end of the lower cleaning nozzle 18 to the holding surface 4a in the Z-axis direction (vertical direction, height direction, vertical direction) is adjusted to 10 mm.

[0035] Figure 3 is a partial cross-sectional side view of the lower cleaning nozzle 18. The lower cleaning nozzle 18 comprises a main body 20 including an upper part 20a having a frustoconical cavity and a base part 20b having a cylindrical cavity. The upper part 20a and the base part 20b are integrally formed, and their respective cavities are connected.

[0036] The aforementioned opening 18a is formed at the top of the upper part 20a. A pipe 22 for supplying cleaning water 15, such as pure water, to the main body 20 is connected to a part of the base 20b, and a cleaning water supply source 24 is connected to the pipe 22.

[0037] The cleaning water supply source 24 includes a cleaning water tank (not shown) in which cleaning water 15 is stored, and a pump (not shown) for supplying cleaning water 15 from the cleaning water tank to the main body 20. The cleaning water supply source 24 supplies cleaning water 15 to the lower cleaning nozzle 18 at a predetermined pressure. The predetermined pressure is, for example, a predetermined value greater than 0.1 MPa and less than or equal to 0.2 MPa.

[0038] Cleaning water 15 is sprayed from the lower cleaning nozzle 18 at a predetermined flow rate. The predetermined flow rate is preferably a predetermined value of 0.3 L / min or more and 1.0 L / min or less, and more preferably a predetermined value of 0.5 L / min or more and 0.7 L / min or less.

[0039] An electrostrictive ultrasonic transducer 26 is provided at a predetermined position on the base 20b below the pipe 22. The ultrasonic transducer 26 has a disc-shaped vibrating body 28 made of a piezoelectric material such as lead zirconate titanate (PZT).

[0040] An annular first electrode 30 is provided on the outer circumference of the upper surface of the vibrating body 28. A thin first metal layer (not shown) of about 20 μm to 30 μm in thickness is formed on the upper surface of the vibrating body 28, and this first metal layer is electrically connected to the first electrode 30. The outer circumference of the lower surface of the vibrating body 28 is supported by an annular support portion 20c provided on the inner surface of the base portion 20b and is fixed to the support portion 20c.

[0041] A second electrode 32 is provided in the center of the lower surface of the vibrating body 28. A thin second metal layer (not shown) of about 20 μm to 30 μm in thickness is formed on the lower surface of the vibrating body 28, and this second metal layer is electrically connected to the second electrode 32.

[0042] An oscillator 34 is connected to the first electrode 30 and the second electrode 32. The oscillator 34 is connected to an AC power supply (not shown). One electrode of the oscillator 34 is electrically connected to the first electrode 30, and the other electrode of the oscillator 34 is electrically connected to the second electrode 32. The oscillator 34 vibrates the vibrating body 28 by supplying high-frequency electrical signals to the first electrode 30 and the second electrode 32.

[0043] The oscillator 34 vibrates the ultrasonic transducer 26 at a predetermined frequency, for example, between 20 kHz and 2 MHz (i.e., the frequency of ultrasound). The cleaning water 15 supplied from the pipe 22 is supplied to the space defined by the main body 20 and the ultrasonic transducer 26, and is sprayed upward from the opening 18a while vibrations of the ultrasonic frequency band (i.e., ultrasonic vibrations) are applied.

[0044] Now, let's return to Figure 1. A cylindrical second rotating shaft 40 is provided at a position different from the lower cleaning nozzle 18 relative to the first rotating shaft 12. The longitudinal direction of the second rotating shaft 40 is aligned with the Z-axis direction.

[0045] A rotational drive source (not shown), such as a motor, is provided at the lower end of the second rotating shaft 40 to rotate the second rotating shaft 40 within a predetermined angular range. The base ends of the first swing arm 42 and the second swing arm 44, each having a longitudinal portion perpendicular to the Z-axis direction, are fixed to the upper end of the second rotating shaft 40.

[0046] The tip 42a of the first oscillating arm 42 is provided with an oscillating cleaning nozzle 42b, with its opening facing downwards. Similarly, the tip 44a of the second oscillating arm 44 is provided with an air nozzle 44b, with its opening facing downwards.

[0047] When the second rotation axis 40 oscillates within a predetermined angular range, the oscillating cleaning nozzle 42b and the air nozzle 44b oscillate on the holding surface 4a, above the holding surface 4a and crossing the holding surface 4a. In Figure 1, arrow 46 shows a schematic representation of the movement trajectories of the oscillating cleaning nozzle 42b and the air nozzle 44b projected onto the holding surface 4a in the Z-axis direction.

[0048] The oscillating cleaning nozzle 42b is connected to a cleaning water supply unit (not shown). The cleaning water supply unit includes a cleaning water tank (not shown) in which cleaning water 15 is stored, and a predetermined pump that delivers the cleaning water 15 from the cleaning water tank to the oscillating cleaning nozzle 42b.

[0049] The oscillating cleaning nozzle 42b is capable of spraying (supplying) cleaning water 15 pressurized to approximately 1.0 MPa toward the holding surface 4a. Alternatively, the oscillating cleaning nozzle 42b may spray a two-fluid mixture of cleaning water 15 and a gas such as air, in which the cleaning water 15 is atomized.

[0050] In contrast, the air nozzle 44b sprays drying air to dry the wafer 11 after it has been cleaned with the cleaning water 15. A drying air supply unit (not shown) is connected to the air nozzle 44b.

[0051] The dry air supply unit includes, for example, a compressor that takes in air from the outside, a filter for removing fine dust from the taken-in air, a mist separator for reducing the moisture content of the taken-in air, and a tank for storing the dry air after dust removal and moisture reduction.

[0052] The pipe connecting the tank and the air nozzle 44b is equipped with a solenoid valve, a flow regulator, etc. Alternatively, the dry air supply unit may have, instead of drawing in air from an external source, a cylinder filled with compressed dry air and a pipe connecting the cylinder and the air nozzle 44b. The pipe may also be equipped with a solenoid valve, a flow regulator, etc.

[0053] The operation of the aforementioned rotary drive source 10, lower cleaning nozzle 18, cleaning water supply source 24, rotary drive source of the second rotating shaft 40, cleaning water supply unit, drying air supply unit, etc., is controlled by a control unit (not shown).

[0054] The control unit may be a control unit dedicated to the spinner cleaning device 2, or, if the spinner cleaning device 2 is incorporated into the cutting device, it may be a control unit that controls the operation of the entire cutting device.

[0055] A control unit is composed of a computer that includes, for example, a processor (processing unit) represented by a CPU (Central Processing Unit), main memory such as DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory), and ROM (Read Only Memory), and auxiliary memory such as flash memory, hard disk drives, and solid-state drives.

[0056] The auxiliary storage device stores software, including a predetermined program. The control unit's functions are realized by operating the processing unit and other components according to this software.

[0057] The spinner cleaning apparatus 2 of this embodiment is used, for example, to clean the entire surface 11a and the back surface 11b of the outer peripheral portion 11c of a wafer 11 that has undergone a DBG process. When cleaning the wafer 11, first the wafer 11 is placed on the holding surface 4a so that the surface 11a is exposed upwards.

[0058] At this time, the back surface 11b becomes the bottom surface of the wafer 11, and the central part of the back surface 11b is in direct contact with the holding surface 4a. Also, the front surface 11a becomes the top surface of the wafer 11. Next, negative pressure from the suction source is applied to the holding surface 4a, and the wafer 11 is held in place by suction on the holding surface 4a.

[0059] Then, the chuck table 4 is rotated at a predetermined speed (for example, a predetermined value between 100 rpm and 3000 rpm), and cleaning water 15 is sprayed from the oscillating cleaning nozzle 42b toward the surface 11a while the first oscillating arm 42 is oscillating.

[0060] In parallel with cleaning the surface 11a, the back surface 11b of the outer peripheral portion 11c located outside the holding surface 4a is cleaned (see Figure 2). At this time, for example, the area from the outer peripheral edge of the wafer 11 inward to 10 mm is cleaned by the lower cleaning nozzle 18. In particular, in this embodiment, cleaning water 15 to which ultrasonic vibrations are applied is supplied upward from the lower cleaning nozzle 18.

[0061] In this embodiment, compared to cleaning the back surface 11b of the outer peripheral portion 11c of the wafer 11 with cleaning water 15 that does not have ultrasonic vibration applied, the outer peripheral portion 11c of the back surface 11b of the wafer 11 can be properly cleaned even if the spray pressure of the cleaning water 15 is lower (specifically, even if it is set to a predetermined value greater than 0.1 MPa and less than or equal to 0.2 MPa).

[0062] Therefore, it is possible to properly clean the back surface 11b of the outer periphery 11c while reducing the upward curvature of the outer periphery 11c. In other words, it is possible to achieve both thorough cleaning of the back surface 11b of the outer periphery 11c and a reduction in the degree of curvature of the outer periphery 11c.

[0063] (Second Embodiment) Next, a second embodiment will be described with reference to Figure 4. Figure 4 is a schematic plan view of the spinner cleaning device 50 in the second embodiment. In the second embodiment, three lower cleaning nozzles 18 are provided at approximately equal intervals along the circumferential direction of the chuck table 4.

[0064] When cleaning the back surface (bottom surface) 11b of the outer periphery 11c, cleaning water 15 is simultaneously sprayed from each lower cleaning nozzle 18 at the same pressure and flow rate. This allows approximately the same upward force to be applied to three locations on the outer periphery 11c of the rotating wafer 11.

[0065] Therefore, compared to the first embodiment, the fluttering of the outer peripheral portion 11c of the wafer 11 during rotation can be reduced. Furthermore, four or more lower cleaning nozzles 18 may be arranged at approximately equal intervals along the circumferential direction of the chuck table 4.

[0066] (Third Embodiment) Next, a third embodiment will be described with reference to Figure 5. Figure 5 is a perspective view of the spinner cleaning device 52 in the third embodiment. The spinner cleaning device 52 has a lower moving mechanism 54 that moves the lower cleaning nozzle 18 along a predetermined direction.

[0067] The lower moving mechanism 54 in this embodiment is a ball screw type moving mechanism that moves the lower cleaning nozzle 18 along the radial direction R1 of the chuck table 4. The lower moving mechanism 54 is fixed on the table cover 16.

[0068] The lower moving mechanism 54 has a movable plate (not shown) that supports the lower cleaning nozzle 18. The movable plate is slidably supported by a pair of guide rails (not shown). A nut portion (not shown) is provided on the lower surface of the movable plate.

[0069] A screw shaft (not shown) is rotatably connected to the nut via multiple balls (not shown). The screw shaft is positioned between a pair of guide rails along the radial direction R1. A rotational drive source (not shown), such as a motor, is connected to one end of the screw shaft.

[0070] When the rotary drive source is operated, the moving plate and the lower cleaning nozzle 18 move along the radial direction R1. The lower moving mechanism 54 may also have other actuators, such as an air cylinder, hydraulic cylinder, or solenoid, as long as the lower cleaning nozzle 18 can be moved along the radial direction R1.

[0071] An upper cleaning nozzle 56 is provided above the lower cleaning nozzle 18. During cleaning, the upper cleaning nozzle 56 is positioned in a location corresponding to the lower cleaning nozzle 18 in a plan view as shown in Figure 4.

[0072] The structure of the upper cleaning nozzle 56 is substantially the same as that of the lower cleaning nozzle 18, and the cleaning water supply source 24 and oscillator 34 are connected to it. However, the orientation of the upper cleaning nozzle 56 is inverted compared to that of the lower cleaning nozzle 18.

[0073] The opening (not shown) of the upper cleaning nozzle 56 is positioned facing downward, and the upper cleaning nozzle 56 is capable of spraying (supplying) cleaning water 15 toward the surface 11a of the outer peripheral portion 11c of the wafer 11 held by the holding surface 4a that extends beyond the holding surface 4a.

[0074] In this way, by clamping the outer peripheral portion 11c of the wafer 11 between the lower cleaning nozzle 18 and the upper cleaning nozzle 56 in the vertical direction during cleaning, the upward force and downward force applied to the wafer 11 by the spraying of cleaning water 15 can be canceled out. Therefore, compared to the first embodiment, the fluttering of the outer peripheral portion 11c of the wafer 11 during cleaning can be reduced.

[0075] The tip of an arm 58, whose longitudinal portion is positioned along the radial direction R1, is fixed to the upper end of the upper cleaning nozzle 56. An upper movement mechanism 60 is connected to the base end of the arm 58 to move the upper cleaning nozzle 56 and the arm 58 in parallel along the radial direction R1 (a predetermined direction in the plane) and the Z-axis direction.

[0076] The upper moving mechanism 60 is, for example, a ball screw type moving mechanism, but it may be replaced with other actuators such as an air cylinder, hydraulic cylinder, or solenoid. Different types of moving mechanisms may be used for the radial R1 and Z-axis direction moving mechanisms.

[0077] The upper moving mechanism 60 moves the upper cleaning nozzle 56 and the arm 58 along the radial direction R1, thereby preventing the upper cleaning nozzle 56 from interfering with the wafer 11 when loading or unloading the wafer 11 onto the holding surface 4a.

[0078] The operation of the upper cleaning nozzle 56 and the upper moving mechanism 60 is controlled by the control unit described above. When cleaning the wafer 11, the positions of the lower cleaning nozzle 18 and the upper cleaning nozzle 56 are adjusted so that the cleaning water 15 hits the same area on a plane perpendicular to the Z-axis direction.

[0079] Specifically, before cleaning begins, the upper moving mechanism 60 adjusts the position of the upper cleaning nozzle 56 and the lower moving mechanism 54 adjusts the position of the lower cleaning nozzle 18 so that the lower cleaning nozzle 18 and the upper cleaning nozzle 56 face each other in the Z-axis direction.

[0080] This allows the position of the lower cleaning nozzle 18 to be adjusted so that the cleaning water 15 from the lower cleaning nozzle 18 appropriately hits the lower surface of the outer peripheral portion 11c of the wafer 11, according to the diameter 13 of the wafer 11, and also allows a downward force to be applied from the upper cleaning nozzle 56 to counteract the upward force from the lower cleaning nozzle 18.

[0081] Furthermore, the structures, methods, etc., according to the embodiments described above can be modified as appropriate without departing from the scope of the object of the present invention. [Explanation of symbols]

[0082] 2, 50, 52: Spinner cleaning device, 2a: Cleaning chamber 4: Chuck table (holding table), 4a: Holding surface, 4b: Diameter, 4c: Center 6: Frame, 8: Porous board 10: Rotation drive source, 12: First rotation shaft (predetermined rotation shaft), 14: Bearing 11: Wafer, 11a: Front surface, 11b: Back surface (bottom surface), 11c: Outer periphery, 13: Diameter 15: Washing water 16: Table cover, 18: Lower cleaning nozzle, 18a: Opening 20: Main body, 20a: Upper part, 20b: Base, 20c: Support part 22: Pipe, 24: Wash water supply source 26: Ultrasonic transducer, 28: Vibrating body, 30: First electrode, 32: Second electrode, 34: Oscillator 40: Second rotation axis 42: First oscillating arm, 42a: Tip, 42b: Oscillating cleaning nozzle 44: Second swing arm, 44a: Tip, 44b: Air nozzle 46: Arrow, 54: Lower movement mechanism 56: Upper cleaning nozzle, 58: Arm, 60: Upper moving mechanism A1: distance, R1: radial direction

Claims

1. A cleaning apparatus for cleaning wafers, A holding table that includes a holding surface having a predetermined diameter and is rotatable around a predetermined axis of rotation, A rotational drive source that rotates the holding table around a predetermined rotation axis, A swinging arm whose tip is above the holding surface and can swing across the holding surface, A rocking cleaning nozzle is provided at the tip of the rocking arm and supplies cleaning water toward the holding surface, A lower cleaning nozzle is positioned radially outside the holding table and below the holding surface of the holding table, and includes an ultrasonic transducer, capable of supplying cleaning water to which ultrasonic vibrations are applied toward the lower surface of the outer periphery of the wafer held by the holding table that extends beyond the holding surface. An upper cleaning nozzle is positioned above the lower cleaning nozzle and in a position corresponding to the lower cleaning nozzle in a plan view when cleaning the wafer, and is capable of supplying cleaning water toward the upper surface of the outer periphery of the wafer held by the holding table that extends beyond the holding surface, An upper moving mechanism that moves the upper cleaning nozzle along a predetermined direction within the plane, The lower cleaning nozzle is equipped with a lower movement mechanism that moves the lower cleaning nozzle along the predetermined direction, A cleaning device characterized in that the upper moving mechanism and the lower moving mechanism are provided separately.

2. The cleaning apparatus according to Claim 1, characterized in that, before the cleaning of the wafer begins, the upper moving mechanism adjusts the position of the upper cleaning nozzle and the lower moving mechanism adjusts the position of the lower cleaning nozzle so that the lower cleaning nozzle and the upper cleaning nozzle face each other in a height direction perpendicular to the predetermined direction.

3. The cleaning device according to claim 2, characterized in that the upper moving mechanism moves the upper cleaning nozzle in the height direction in addition to the radial direction.

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