Extreme ultraviolet or soft X-ray beam profiler

Abstract

This invention provides a beam profiler system for EUV and SXR radiation that has high sensitivity and high spatial resolution. [Solution] A beam profiler for extreme ultraviolet (EUV) or soft X-ray (SXR) radiation comprising scintillators 10, 11 and an imaging system 210 configured to capture fluorescence images generated by the scintillators, wherein the scintillators 10, 11 contain one or more fluorescent nitrogen-vacancy diamonds at a concentration of approximately 1-3.5 g / cm³. 3 It has a density of .

Description

[Technical Field]

[0001] This disclosure relates to the field of electromagnetic radiation profiling, specifically focusing on extreme ultraviolet (EUV) or soft X-ray (SXR) radiation. More specifically, this disclosure relates to methods and apparatus for characterizing the beam properties of EUV and SXR radiation. [Background technology]

[0002] EUV and SXR radiation are defined as electromagnetic radiation with wavelengths ranging from 10–120 nm (approximately 10–124 eV) and 0.1–10 nm (approximately 124–12.4 keV), respectively. Recent advances in the fabrication of nanoelectronic chips have led to a surge in interest in EUV, particularly in the use of 13.5 nm radiation in advanced photolithography equipment. This interest is further fueled by the continuing proposal to use SXR as a light source for next-generation photolithography, a concept that has been considered for nearly 50 years.

[0003] Despite these advances, effectively characterizing the beam properties of EUV and SXR radiation still presents significant challenges due to strong absorption by air and the need for detection in a vacuum. [Overview of the project]

[0004] This disclosure relates to a beam profiler for EUV or SXR radiation, designed to provide high sensitivity and spatial resolution for various applications in scientific research and industrial processes.

[0005] In one embodiment, the disclosure provides a beam profiler comprising a scintillator and an imaging system configured to capture a fluorescence image generated by the scintillator. The scintillator comprises a substrate and a scintillator layer disposed on the substrate. The scintillator layer contains one or more fluorescent nitrogen-vacant diamonds at a concentration of about 1 to 3.5 g / cm³. 3 It has a density of .

[0006] In another aspect, the present disclosure provides a beam profiler comprising a scintillator and an imaging system in contact with the scintillator. The scintillator includes an optical fiber plate, a conductive layer on the optical fiber plate, and a scintillator layer on the conductive layer. The scintillator layer includes one or more fluorescent nitrogen-vacancy diamonds and has a length of about 1 to 100 mm in a direction substantially parallel to the interface between the conductive layer and the optical fiber plate.

[0007] In yet another aspect, the present disclosure provides a scintillator comprising a substrate and a scintillator layer disposed on the substrate. The scintillator layer includes one or more fluorescent nitrogen-vacancy diamonds and has a density of about 1 to 3.5 g / cm 3 .

[0008] In a further aspect, the present disclosure provides a method for forming a scintillator. The method includes providing a substrate, dispersing fluorescent nitrogen-vacancy diamond particles in a solvent to form a dispersion, generating charged droplets containing the fluorescent nitrogen-vacancy diamond particles from the dispersion, and depositing the charged droplets on the substrate.

[0009] The beam profiler described in the present disclosure provides several important advantages for the characterization and monitoring of EUV or SXR radiation. By using a scintillator layer containing fluorescent nitrogen-vacancy diamonds (FNVDs), the beam profiler achieves high UV-visible conversion efficiency, short fluorescence decay time, and low afterglow. These properties are essential for effective EUV or SXR detection, which provides high spatial resolution and excellent image contrast.

[0010] The innovative design of the scintillator layer described in the present disclosure, with its optimized thickness, surface roughness average (R a), and the average nitrogen vacancy (NV) density ensure excellent sensitivity and emission intensity. The use of FNVDs with NV centers enhances photostability, minimizes afterglow, and results in a nearly constant emission profile over a wide wavelength range. This makes beam profilers highly suitable for high-performance detection of vacuum ultraviolet, EUV, and X-rays.

[0011] In addition, the beam profiler exhibits high material efficiency and controlled deposition through the electrospray deposition process, ensuring uniform thickness and structural uniformity of the scintillator layer. The versatility of this method enables application to a wide range of substrates, including fiber optic plates (FOPs), making it suitable for various applications and substrate types.

[0012] Beam profilers exhibit linear response across a wide photon flux range, high spatial resolution, and a high signal-to-noise ratio, ensuring accurate beam diagnostics and monitoring. Combined with excellent photostability and durability, their compact and cost-effective design makes beam profilers an ideal tool for advanced imaging and detection applications in scientific research and industrial processes, including EUV and SXR radiation. [Brief explanation of the drawing]

[0013] The aspects of this disclosure will be readily understood from the following detailed description when read in conjunction with the accompanying drawings. Note that various features may not be depicted to scale. In fact, the dimensions of various features may be increased or decreased as appropriate for the sake of clarity in the discussion.

[0014] [Figure 1a] This is a cross-sectional view of a scintillator 10 according to one embodiment of the present invention.

[0015] [Figure 1b] This is a cross-sectional view of a scintillator 11 according to one embodiment of the present invention.

[0016] [Figure 2]An exemplary setup for forming scintillators 10 and 11 is shown.

[0017] [Figure 3a] A cross-sectional view of a beam profiler 20 according to one embodiment of the present disclosure is shown.

[0018] [Figure 3b] A cross-sectional view of a beam profiler 21 according to one embodiment of the present disclosure is shown.

[0019] [Figure 4a] The image shows a planar scanning electron microscope (SEM) image of an FNVD layer deposited on an ITO-coated glass substrate according to one embodiment of the present disclosure.

[0020] [Figure 4b] This shows a cross-sectional SEM image of an FNVD layer deposited on an ITO-coated glass substrate according to one embodiment of the present disclosure.

[0021] [Figure 5a] This shows the vertical fluorescence image and intensity line profile of 50 nm radiation at the BL03A1 bending magnet beamline.

[0022] [Figure 5b] This shows the vertical fluorescence image and intensity line profile of 50 nm radiation at the BL21B2 undulator beamline.

[0023] [Figure 6] This shows the change in beam shape due to the photon energy of synchrotron radiation ranging from 300 to 1400 eV. The numbers in parentheses represent the exposure time in milliseconds.

[0024] [Figure 7]The results of a photostability test of a beam profiler according to an embodiment of this disclosure, using 13.5 nm radiation from the BL08B beamline at an intensity of 24 μW / mm2 for more than 6 hours, are shown. The images in Figure 7 show the beam at the start (left) and end (right) of the measurement.

[0025] [Figure 8] The photo yield of a scintillator according to one embodiment of this disclosure over an energy range of 80 to 1200 eV is shown. [Modes for carrying out the invention]

[0026] Throughout the drawings and detailed description, common reference numerals are used to indicate identical or similar components. Embodiments of this disclosure will be readily apparent from the following detailed description in conjunction with the accompanying drawings.

[0027] Spatial descriptions such as "upward," "downward," "up," "left," "right," "down," "top surface," "bottom surface," "vertical," "horizontal," "sideways," "higher," "lower," "higher," "~up," and "lower" specify the orientation of a component(s) relative to a given component or group of components, or to the plane of a given component or group of components, as shown in the relevant diagrams. The spatial descriptions used herein are for illustrative purposes only, and it should be understood that actual implementations of the structures described herein may be spatially configured in any orientation or manner, provided that such configuration does not deviate from the advantages of the embodiments of this disclosure.

[0028] In the following description, preferred examples include manufactured articles, methods for manufacturing them, etc. It will be apparent to those skilled in the art that modifications, including additions and / or substitutions, can be made without departing from the scope and spirit of this disclosure. Certain details may be omitted so as not to obscure this disclosure, but this disclosure is written to enable those skilled in the art to carry out the teachings herein without excessive experimentation.

[0029] Characterizing the beam properties of EUV and SXR radiation is essential in EUV lithography, where multilayer mirrors (e.g., Mo / Si coated) are used to guide and focus radiation (e.g., 13.5 nm) onto semiconductor wafers. Mirror degradation or contamination can cause divergence of the EUV beam, altering its spatial intensity distribution at the wafer location. Regular radiation monitoring is desirable to inspect the optical components and determine beam position and uniformity through EUV imaging.

[0030] There are two methods for profiling EUV radiation: direct and indirect. The first (direct) method uses a back-illuminated charge-coupled device (CCD) or complementary metal-oxide-semiconductor (CMOS) camera to detect radiation that generates free electrons inside the detection element. This method is highly sensitive but expensive, and the detector is susceptible to radiation damage under strong illumination. The second (indirect) method involves using a scintillator to convert EUV photons into visible light, which is then imaged by a standard semiconductor-based camera. Indirect detection is less sensitive than direct detection but is more versatile and cost-effective.

[0031] Detectors such as Si-based photodiodes or imaging sensors face limitations due to the shallow penetration depth of EUV light into silicon at a wavelength of approximately 10 nm at 90 nm. This shallow penetration depth necessitates positioning the photosensitive region very close to the substrate surface to achieve high responsiveness. While the light transmission depth of Si increases to approximately 0.7 μm at 13.5 nm, irradiation-induced charging of the upper oxide layer, such as SiO2, significantly degrades the detection performance of the semiconductor chip.

[0032] Back-illuminated sensors with thinned backsides can be used to address the problem of shallow light penetration depth. However, these sensors are costly to manufacture because the Si substrate needs to be thinned to just a few microns. In addition, EUV and SXR radiation can temporally ablate Si-based semiconductor chips, requiring the use of an EUV / SXR-visible photon converter to avoid direct exposure of the Si chip to ionization radiation.

[0033] Covering sensors with phosphors to convert EUV / SXR radiation into visible light offers an attractive alternative. Desired properties for scintillators for EUV detection include high UV-visible conversion efficiency, short fluorescence decay time, low afterglow (radiation-induced phosphorescence), high spatial resolution, vacuum compatibility, high radiation damage threshold, and good mechanical strength. Sodium salicylate can be used as a scintillator for EUV detection. This material has the advantage of having a nearly constant response over the wavelength range of 30-300 nm; however, its photostability is insufficient, and sodium salicylate coatings prepared by spraying powder onto a UV / vis window are highly scattering and unsuitable for imaging applications.

[0034] In summary, this disclosure addresses challenges associated with EUV and SXR radiation profiling by using advanced photon conversion techniques and deposition methods to generate low-cost, compact, and broadband EUV or SXR beam profilers with excellent photostability, high resolution, and exceptional contrast.

[0035] Definition of Terms Optically transparent: This refers to the ability of a material to transmit visible light with minimal absorption or scattering. Specifically, in the context of this disclosure, an optically transparent substrate is defined as having a transmittance of ≥50%, preferably ≥60%, and more preferably ≥70% for visible light in the wavelength range of 400 to 700 nm.

[0036] Optically opaque: This refers to the ability of a material to absorb or scatter visible light with minimal transmittance. Specifically, in the context of this disclosure, an optically opaque substrate is defined as having a transmittance of <50%, preferably ≤40%, and more preferably ≤30% for visible light in the wavelength range of 400 to 700 nm.

[0037] Electrically conductive substrate / layer or conductive substrate / layer: A substrate / layer is considered conductive if it allows electric current to flow through it. This type of substrate / layer typically includes materials such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), and graphene. These materials have free electrons or other charge carriers that can move readily under the influence of an electric field, allowing the substrate to effectively conduct electricity.

[0038] Electrically insulating substrate / layer or insulating substrate / layer: A substrate / layer is considered electrically insulating if it resists the flow of electric current. This type of substrate typically includes materials such as glass fiber, FOP, quartz, and sapphire. These materials have tightly bound electrons that do not move freely, preventing the passage of electric current and providing electrical insulation between different components.

[0039] Average hydrodynamic diameter: The average hydrodynamic diameter of FNVD particles refers to the average diameter of virtual solid spheres that exhibit the same hydrodynamic friction properties as FNVD particles in a liquid culture medium. This measurement is typically obtained using dynamic light scattering (DLS) techniques, which account for the effect of a thin electric dipole layer that adheres to the particle surface as the particles move through the liquid.

[0040] Polydispersion Index (PDI): The polydispersity index is a numerical value that indicates the range of particle size distribution within a sample of FNVD particles. It is calculated as the ratio of the standard deviation of particle size to the mean particle size. A higher PDI value indicates a wider range of particle sizes and a more non-uniform particle distribution. This index is typically measured using DLS techniques and is used to evaluate the behavior and properties of FNVD particles.

[0041] scintillator Figure 1a is a cross-sectional view of a scintillator 10 according to one embodiment of the present invention. The scintillator 10 comprises a substrate 100 and a scintillator layer 110 disposed on the substrate 100. The scintillator layer may include one or more FNVDs. The scintillator layer may consist of one or more FNVDs. The FNVDs can be obtained in accordance with U.S. Patent No. 11,029,421 B2, the full text of which is incorporated herein by reference. In the text, direction y may be defined as the thickness direction of the substrate 100. Direction x may be defined as a direction substantially perpendicular to direction y. Direction x may be defined as a direction substantially parallel to the interface between the scintillator layer 110 and the substrate 100.

[0042] The substrate 100 may be optically transparent. The substrate 100 may be optically opaque. The substrate 100 may be conductive. The substrate 100 may be electrically insulating. Suitable conductive optically transparent substrates include, but are not limited to, ITO, FTO, AZO, GZO, and graphene.

[0043] FNVD may contain one or more NV centers. The average density of NV centers may range from approximately 0.1 to 1,000 ppm. For example, the average NV density may be approximately 0.1, 0.2, 0.4, 0.5, 0.6, 0.8, 1, 2, 4, 5, 6, 8, 10, 12, 14, 15, 16, 18, 20, 40, 50, 60, 80, 100, 200, 400, 500, 600, 800, or 1,000 ppm. A suitable average NV density range may be formed from any two of the aforementioned values.

[0044] The NV center is essentially a neutral NV center (NV 0 ) consists of, and is essentially a negative NV center (NV - ) can be excluded. Neutral NV 0 and negative NV - For the center, please refer to U.S. Patent No. 11,029,421B2. This invention is neutral NV0 The fluorescence feature at the center is a negative NV - It was found that the absorption band at the center (peaking at 550 nm and having a FWHM of around 100 nm; the zero phonon line is located at 638 nm) strongly overlaps with it. As a result, the negative NV - When the density of the centers is high, self-absorption of luminescence may occur, which may affect the overall performance of the scintillator layer 110.

[0045] In some embodiments, the neutral NV 0 The average density of the centers may be about 0.1 to 1,000 ppm. For example, the density of the neutral NV 0 centers may be about 0.1, 0.2, 0.4, 0.5, 0.6, 0.8, 1, 2, 4, 5, 6, 8, 10, 12, 14, 15, 16, 18, 20, 40, 50, 60, 80, 100, 200, 400, 500, 600, 800, or 1,000 ppm. The neutral NV 0 A suitable average concentration range of the centers can be formed from any two of the above values.

[0046] Radiation 301 may be incident on the scintillator layer 110 along direction y. The FNVD can convert radiation 301 into radiation 302. The FNVD can absorb radiation 301. The FNVD can be excited by radiation 301. The FNVD may emit radiation 302. Radiation 301 can have an energy in the range of about 10 to 1500 electron volts (eV). For example, the energy of radiation 301 may be about 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 120, 140, 150, 160, 180, 200, 300, 400, 500, 600, 700, 800, 900, 1,000, 1100, 1200, 1300, 1400, or 1500 eV. A suitable range can be formed from any two of the aforementioned values. Radiation 301 can have wavelengths in the range of approximately 0.8 to 120 nanometers (nm). For example, the wavelength of radiation 301 may be approximately 0.8, 0.9, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 18, 20, 30, 40, 50, 60, 70, 80, 90, 100, 110, or 120 nm. A suitable range can be formed from any two of the aforementioned values. Radiation 302 can have energies in the range of approximately 1.7 to 3.1 eV. For example, the energy of radiation 302 may be approximately 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, or 3.1 eV. A suitable range can be formed from any two of the aforementioned values. Radiation 302 can have wavelengths in the range of approximately 400 to 700 nm. For example, the wavelength of radiation 302 may be approximately 400, 425, 450, 475, 500, 525, 550, 575, 600, 625, 650, 675, or 700 nm. A suitable range can be formed from any two of the aforementioned values.

[0047] The scintillator layer 110 may have a photoyield of 10 photons / keV or more at energies of radiation 301 in the range of approximately 10 to 1500 eV. The photoyield is defined as the number of photons of radiation 302 produced per unit of energy deposited in the scintillator layer 110 by ionizing photons of radiation 301. It is related to the quantum yield, which is defined as the number of emitted photons versus the number of absorbed photons, by the following formula: Light yield = quantum yield / E In the formula, E is the energy of each ionizing photon of radiation 301. For example, the photo yield at energies of radiation 301 in the range of approximately 10 to 1500 eV may be approximately 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 80, 90, 100, 120, 140, 150, 160, 180, or 200 photons / keV. The photo yield at energies of radiation 301 at approximately 200 eV may be approximately 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 80, 90, 100, 120, 140, 150, 160, 180, or 200 photons / keV. The photo-yield of radiation 301 at an energy of approximately 400 eV may be approximately 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 80, 90, 100, 120, 140, 150, 160, 180, or 200 photons / keV. The photo-yield of radiation 301 at an energy of approximately 600 eV may be approximately 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 80, 90, 100, 120, 140, 150, 160, 180, or 200 photons / keV. The photon yield at an energy of approximately 800 eV for radiation 301 can be approximately 30, 35, 40, 45, 50, 55, 60, 65, 70, 80, 90, 100, 120, 140, 150, 160, 180, or 200 photons / keV. The photon yield at an energy of approximately 1000 eV for radiation 301 can be approximately 35, 40, 45, 50, 55, 60, 65, 70, 80, 90, 100, 120, 140, 150, 160, 180, or 200 photons / keV. The photo-yield of radiation 301 at an energy of approximately 1200 eV may be approximately 45, 50, 55, 60, 65, 70, 80, 90, 100, 120, 140, 150, 160, 180, or 200 photons / keV. The lower limit of the photo-yield may be any of the aforementioned values. A suitable range of photo-yield can be formed from any two of the aforementioned values.

[0048] If the substrate 100 is optically transparent, the radiation 302 can penetrate the substrate 100 substantially along the y-direction. If the substrate 100 is optically transparent, the radiation 302 can be backscattered substantially along the y-direction. If the substrate 100 is optically transparent, the scintillator 10 can operate in transmission mode. If the substrate 100 is optically opaque, the radiation 302 can be backscattered substantially along the y-direction. If the substrate 100 is optically opaque, the scintillator 10 can operate in reflection mode. For example, if the scintillator 10 is in reflection mode, the scintillator 10 can be used as a viewing plate for an EUV or SXR beam.

[0049] The scintillator layer 110 can have a thickness in the range of approximately 0.1 to 500 μm. For example, the thickness of the scintillator layer 110 may be approximately 0.1, 0.2, 0.4, 0.5, 0.6, 0.8, 1, 2, 5, 6, 8, 10, 20, 40, 50, 60, 80, 100, 200, 300, 400, or 500 μm. A suitable thickness range can be formed from any two of the aforementioned values. The scintillator layer 110 has a R of less than approximately 1,000 nm. a It can have R a R may be 10, 20, 40, 50, 60, 80, 100, 120, 140, 150, 160, 180, 200, 250, 300, 400, 500, 600, 800, or 1,000. Also, R a The upper limit may be any of the above. a The appropriate range can be formed from any two of the aforementioned numerical values.

[0050] In some embodiments, the inventors unexpectedly discovered that the interaction between the energy of the radiation 301 and the thickness of the scintillator layer 110 significantly affects the spatial resolution, sensitivity, and luminescence intensity of the scintillator. Specifically, higher energy radiation typically requires a thicker layer to maintain optimal luminescence intensity, which can negatively impact spatial resolution. Conversely, lower energy radiation benefits from a thinner layer, increasing spatial resolution but potentially reducing sensitivity and luminescence intensity.

[0051] Scintillator layer thickness, surface roughness (Ra), average NV / NV 0 Selecting the appropriate combination of densities requires extensive and innovative research due to the complex interdependence between these factors. Thinner layers with lower Ra and higher average NV density generally provide superior spatial resolution by minimizing light scattering. However, sensitivity is influenced by the thickness of the scintillator layer, as thicker layers can absorb more radiation and generate more luminescent photons. Balancing these conflicting effects requires a deep understanding of material properties, advanced manufacturing methods, and innovative process control strategies. Through extensive and innovative research, this disclosure provides solutions for thicknesses ranging from approximately 0.1 to 500 μm and average Ra less than approximately 1,000 nm. a , and NV centers in the range of approximately 0.1 to 1,000 ppm, especially neutral NV 0 This provides an optimized design for the scintillator layer 110, having a parameter combination for the mean concentration at the center.

[0052] The scintillator layer 110 contains approximately 1-3.5 g / cm³ 3 The density can be approximately 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 3.1, 3.2, 3.3, 3.4, or 3.5 g / cm³. 3 Therefore, the appropriate range of density for the scintillator layer 110 can be formed from any two of the aforementioned values.

[0053] The scintillator layer 110 may be polycrystalline. The scintillator layer 110 can have a length of approximately 1 to 100 mm substantially along the x-direction. For example, the length is approximately 1, 2, 4, 5, 6, 8, 10, 20, 30, 40, 50, 60, 70, 80, 90, or 100 mm. A suitable range of thickness may be formed from any two of the aforementioned values.

[0054] The scintillator layer 110 has a density of 24 μW / mm². 2 After 6 hours of exposure to 13.5 nm radiation at a certain intensity, a decrease in fluorescence intensity of less than 10% may be observed. For example, the decrease in fluorescence intensity may be approximately 0.1, 0.5, 1, 1.5, 2, 2.5, 3, 3.5, 4, 4.5, 5, 6, 7, 8, 9, or 10%. The upper limit of the decrease in fluorescence intensity may be any of the above values. A suitable range of decrease in fluorescence intensity may be formed from any two of the aforementioned values.

[0055] The scintillator layer 110 can have a fluorescence decay time of approximately 10 ns or more and exhibit a significant afterglow. For example, the fluorescence decay time may be approximately 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 120, 140, 150, 160, 180, or 200 ns. The lower limit of the fluorescence decay time may be any of the values ​​mentioned above. A suitable range of fluorescence decay time can be formed from any two of the aforementioned values.

[0056] Figure 1b is a cross-sectional view of a scintillator 11 according to one embodiment of the present invention. The scintillator 11 is substantially the same as the scintillator 10, except that an intermediate layer 120 is substantially arranged along the y-direction between the scintillator layer 110 and the substrate 100. The layer 120 may be conductive. The layer 120 may be optically transparent. The layer 120 may be optically opaque. The scintillator layer 110 may be placed on top of the layer 120. The scintillator layer 110 may be in contact with the layer 120. The layer 120 may be placed on top of the substrate 100. The layer 120 may be in contact with the substrate 100. If the layer 120 or the substrate 100 is optically opaque, the scintillator 11 can operate in reflection mode. If both the layer 120 and the substrate 100 are optically transparent, the scintillator 11 can operate in transmission mode.

[0057] Suitable materials for layer 120 include, but are not limited to, ITO, FTO, AZO, GZO, and graphene. Other optically transparent conductive layers commonly formed on insulating transparent substrates may also be used, such as silver nanowires, conductive polymers (e.g., PEDOT:PSS), and thin metal films (e.g., gold or silver).

[0058] Layer 120 can have a thickness in the range of 50 to 500 nm. For example, the thickness of layer 120 may be 50, 60, 80, 100, 120, 140, 150, 160, 180, 200, 250, 300, 350, 400, 450, or 500 nm. A suitable range for the thickness of layer 120 can be formed from any two of the aforementioned values.

[0059] In the scintillator 11, the substrate 100 may be electrically insulating. The material of the substrate 100 used in the scintillator 11 is not particularly limited. For example, the material of the substrate 100 may include glass fiber, FOP, quartz, sapphire, or other electrically insulating, optically transparent substrates commonly used in scintillators.

[0060] The FOP may include one or more optical fibers. Each optical fiber may have a first end on a first surface of the substrate 100 and a second end on a second surface of the substrate 100 opposite to the first surface. The optical fibers may extend along direction y. Layer 120 may be positioned above the first end of the optical fiber. Layer 120 may be in contact with the optical fiber. Scintillator layer 110 may be positioned above the first end of the optical fiber. Scintillator layer 110 does not have to be in contact with the first end of the optical fiber. The FOP may have a numerical aperture of about 0.5 to 2. For example, the numerical aperture of the FOP may be about 0.5, 0.6, 0.8, 1, 1.2, 1.4, 1.5, 1.6, 1.8, or 2. A suitable range of numerical apertures for the FOP may be formed from any two of the aforementioned values. The FOP may have a resolution of about 2 to 10 μm. For example, the resolution of the FOP may be approximately 2, 3, 4, 5, 6, 7, 8, 9, or 10 μm. A suitable range for the resolution of the FOP can be formed from any two of the aforementioned values.

[0061] The scintillators 10 and 11 according to this disclosure offer several important advantages. The FNVD used in scintillators 10 and 11 contains NV centers, which are optically active defects that provide exceptional photostability and negligible afterglow. This results in a nearly constant emission profile from the NV0 centers over the 550–800 nm range, making the FNVD highly suitable for high-performance detection of vacuum ultraviolet, EUV, and X-rays.

[0062] Compared to organic phosphors such as sodium salicylate, which decompose rapidly under continuous EUV or SXR excitation, scintillators 10 and 11 significantly improve scintillator durability and sensing performance. Scintillators 10 and 11 exhibit high photostability, with a reading of 1 × 10⁶ per second. 10 There is no significant decrease in fluorescence intensity under continuous illumination by photons. This ensures reliable and consistent performance over long periods, making scintillators 10 and 11 an ideal choice for applications requiring long-term stability.

[0063] In addition, scintillators 10 and 11 exhibit high UV-visible conversion efficiency, short fluorescence decay time, and low afterglow, which are essential characteristics for effective EUV or SXR detection. The uniform thickness and structural uniformity of the scintillator layer 110 further enhance the performance of scintillators 10 and 11, providing high spatial resolution and excellent image contrast.

[0064] Method for forming a scintillator This disclosure further provides a method for forming scintillators 10, 11. Figure 2 shows an exemplary setup for forming scintillators 10, 11. The method comprises: • Provide substrate 100; • Disperse FNVD particles in a solvent to form dispersion 150; • Generate charged droplets 151 containing FNVD particles from dispersion 150; • Charged droplets 151 are deposited on top of the substrate 100.

[0065] The method may further include providing a layer 120 on top of the substrate 100. The layer 120 can be provided on the substrate 100 using known thin-film deposition techniques such as chemical vapor deposition (CVD), physical vapor deposition (PVD), or magnetron sputtering. The method may further include depositing charged droplets 151 on top of the layer 120. The method may further include cleaning the surface of the substrate 100 or layer 120 using oxygen plasma. The time for depositing the charged droplets 151 on the substrate 100 or layer 120 can be controlled to achieve a desired thickness of the scintillator layer 110. The substrate 100 may be rotated along a rotation axis 180. The rotation axis 180 may be substantially perpendicular to the surface of the substrate 100 in order to receive the charged droplets 151. The rotation axis 180 may be substantially parallel to direction y.

[0066] The deposition of the charged droplets 151 may be by an electrospray deposition process. Specifically, the method may further include providing the dispersion 150 in an injector 160. For example, the injector 160 may be a syringe, capillary tube, or microfluidic device. A potential or electric field 170 may be applied between the injector 160 and the substrate 110. The injector 160 may be positively biased or have a high potential energy. The substrate 110 may be negatively biased or have a low potential energy. The electric field 170 may be about +1 to +10 kV / cm. For example, the electric field 170 may be about 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 kV / cm. A suitable range for the electric field 170 may be formed from any two of the aforementioned values. The injection rate of the dispersion 150 from the injector 160 may be about 100 to 300 μL / h. For example, the injection rate may be approximately 100, 120, 140, 150, 160, 180, 200, 220, 240, 250, 260, 280, or 300 μL / h. A suitable range of injection rates may be formed from any two of the aforementioned values. In one embodiment, the injection rate of the syringe as injector 160 may be controlled by using a syringe pump.

[0067] Comparing known techniques for producing coatings from diamond particles, such as spin coating or deposition coating, it is surprising to find that the electrospray deposition process has a density of approximately 1–3.5 g / cm³. 3 It was found to be a unique method that allows for the formation of the scintillator layer 110 at a density of . This is due to the unique ability of the electrospray deposition process to generate a fine mist of charged droplets, which allows for precise control over the deposition parameters. The high electric field applied during the process ensures that the FNVD particles are well dispersed and uniformly deposited on the substrate, resulting in a dense and uniform scintillator layer.

[0068] In contrast, other techniques for producing coatings from diamond particles often result in significant material loss and uneven thickness, leading to lower density and poor structural uniformity. The electrospray deposition process minimizes waste and maximizes efficiency by ensuring that FNVD particles are deposited with high precision and consistency. The electrospray deposition method is also essential for achieving the desired density and performance characteristics of the scintillator layer 110, as well as the desired NV density and controlled thickness and surface roughness (R a This enables the formation of a thin layer having ).

[0069] The solvent for dispersing the FNVD particles is not particularly limited. For example, the solvent may be a mixture of water and methanol, ethanol, acetone, or dimethylformamide (DMF). The FNVD particles may have an average hydrodynamic diameter of about 50 to 200 nm. For example, the average hydrodynamic diameter may be about 50, 60, 70, 80, 90, 100, 120, 140, 150, 160, 180, or 200 nm. A suitable range for the average hydrodynamic diameter can be formed from any two of the aforementioned values. The FNVD particles may have a PDI of about 0.05 to 0.2. For example, the PDI may be about 0.05, 0.06, 0.08, 0.1, 0.12, 0.14, 0.15, 0.16, 0.18, or 0.2. A suitable range for the PDI can be formed from any two of the aforementioned values.

[0070] The method according to this disclosure offers several advantages over other film deposition methods such as spin coating and precipitated coating. In particular, the method according to this disclosure utilizes an electric field to generate a fine mist of charged droplets for film deposition on a conductive substrate. This method offers several key advantages:

[0071] Material efficiency: Unlike spin coating, which results in significant material loss, the application of an electric field ensures that the deposited FNVD particles are well dispersed in the high electric field, minimizing waste and maximizing efficiency.

[0072] Controlled deposition: The thickness and area of ​​the deposition can be easily controlled by adjusting the spray time and plume size. This allows for precise control of the properties of the deposition layer, ensuring uniform thickness and structural uniformity.

[0073] Versatility: The method described herein can be applied to a wide range of substrates, including insulating substrates such as FOPs, by first coating them with a thin layer of ITO. This versatility makes the method suitable for various applications and substrate types.

[0074] High Uniformity: The method according to this disclosure generates a scintillator layer 110 with a high level of structural uniformity, which is essential for achieving high spatial resolution and excellent image contrast for EUV or SXR beam profiling.

[0075] Cost-effectiveness: The method described herein is cost-effective and generates a low-cost, compact, broadband EUV / SXR responsive beam profiler with excellent photostability, high resolution, and superior contrast.

[0076] EUV or SXR beam profiler The disclosure further provides an EUV or SXR beam profiler including scintillators 10, 11. Figure 3a shows a cross-sectional view of a beam profiler 20 according to one embodiment of the disclosure. The beam profiler 20 includes scintillators 10, 11 and an imaging system 210 configured to capture a fluorescence image 310 generated by the scintillators 10, 11.

[0077] The imaging system 210 can be optically coupled to the scintillators 10 and 11. The imaging system 210 can be in contact with the scintillators 10 and 11. The imaging system 210 can be in contact with the substrate 100. The imaging system 210 can be in contact with the FOP. The imaging system 210 can be in contact with the optical fiber of the FOP. The imaging system 210 does not have to be in contact with the scintillators 10 and 11. The imaging system 210 can be configured to capture radiation 302. The fluorescence image 310 may be generated by the scintillator layer 110 of the scintillators 10 and 11. The scintillators 10 and 11 may be positioned at the focal point of the imaging system 210. The scintillator layer 110 may be positioned at the focal point of the imaging system 210. The imaging system 210 is not particularly limited. Any imaging system suitable for capturing wavelengths in the range of 400 to 700 nm can be used. For example, the imaging system may be a CCD camera, a CMOS camera, a photodiode, a photonic multichannel analyzer, a hyperspectral imaging system, or a multispectral imaging system.

[0078] In some embodiments, radiation 301 may be present in a vacuum. Radiation 302 may be present at ambient pressure. Scintillators 10, 11 may be hermetically sealed to prevent gas leakage from the surroundings to the vacuum. Scintillator layer 110 may be hermetically sealed to prevent gas leakage from the surroundings to the vacuum. Substrate 100 may be hermetically sealed to prevent gas leakage from the surroundings to the vacuum. Scintillators 10, 11 can be embedded in a metal holder to form an hermetically sealed seal. The metal holder can be attached to a high-vacuum flange viewport via an O-ring to form an hermetically sealed seal.

[0079] The beam profiler 20 measures approximately 2 × 10⁻⁶. 11 It can exhibit a linear response over the photon flux range of less than photons / s. The beam profiler 20 measures the intensity of radiation 301 by approximately 2 × 10⁻⁶. 11The intensity of radiation 302 can be linearly converted over the photon flux range of less than photons / s. For example, the photon flux is approximately 10, 10 2 , 10 3 , 10 4 , 10 5 , 10 6 , 10 7 , 10 8 , 5×10 8 , 10 9 , 5×10 9 , 10 10 , 2×10 10 , 4×10 10 , 5×10 10 , 6×10 10 , 8×10 10 , 10 11 , or 2 × 10 11 The value is photons / s. The upper limit of the photon flux range may be any of the values ​​mentioned above. A suitable photon flux range can be formed from any two of the aforementioned values.

[0080] The beam profiler 20 may have a spatial resolution of less than approximately 50 μm, measured according to the standard knife-edge method. For example, the spatial resolution may be approximately 1, 5, 10, 15, 20, 25, 30, 35, 40, 45, or 50 μm. The upper limit of the spatial resolution range may be any of the values ​​mentioned above. A suitable spatial resolution range may be formed from any two of the aforementioned values.

[0081] The beam profiler 20 can have an exposure time of less than approximately 5 seconds. For example, the exposure time may be approximately 0.5 μs, 0.7 μs, 1 μs, 2 μs, 5 μs, 7 μs, 10 μs, 25 μs, 50 μs, 75 μs, 100 μs, 250 μs, 500 μs, 750 μs, 1 ms, 2 ms, 5 ms, 7 ms, 10 ms, 25 ms, 50 ms, 75 ms, 100 ms, 250 ms, 500 ms, 750 ms, 1 s, 2 s, or 5 s. The upper limit of the exposure time range may be any of the values ​​described above. A suitable exposure time range can be formed from any two of the aforementioned values.

[0082] The beam profiler 20 can have a signal-to-noise ratio of approximately 100 or more when operating with an exposure time of 20 ms. For example, the signal-to-noise ratio may be approximately 100, 120, 140, 150, 160, 180, 200, 220, 240, 250, 260, 280, or 300. The lower limit of the noise equivalent power density range may be any of the values ​​described above. A suitable range of noise equivalent power density can be formed from any two of the aforementioned values.

[0083] The beam profiler 20 measured approximately 50 μW / cm² at radiation 301 with a wavelength of 13.5 nm (or 91.8 eV). 2 Hz 1 / 2 It can have a noise equivalent power density of less than 1 μW / cm². Preferably, a beam profiler 20 using FOP as the substrate 110 has a noise equivalent power density of about 1 μW / cm² at a radiation 301 of 13.5 nm (or 91.8 eV). 2 Hz 1 / 2 It can have a noise equivalent power density of less than 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 5, 10, 15, 20, 25, 30, 35, 40, 45, or 50 μW / cm². 2 Hz 1 / 2 This is possible. The upper limit of the noise equivalent power density range may be any of the values ​​mentioned above. A suitable range of noise equivalent power density can be formed from any two of the aforementioned values.

[0084] Figure 3b shows a cross-sectional view of a beam profiler 21 according to one embodiment of the present disclosure. The beam profiler 21 is substantially the same as the beam profiler 20, except that it further includes a lens system 220 between the scintillators 10, 11 and the imaging system 210. The lens system 220 may be optically coupled to the scintillators 10, 11. The lens system 220 may be optically coupled to the imaging system 210.

[0085] The lens system 220 can provide the imaging system 210 with an image magnification greater than 1 for the fluorescence image 310. For example, the image magnification may be 1.01, 1.02, 1.03, 1.04, 1.05, 1.1, 1.2, 1.4, 1.5, 1.6, 1.8, 2, 2.2, 2.4, 2.5, 2.6, 2.8, or 3. A suitable range of image magnification may be formed from any two of the aforementioned values.

[0086] The lens system 220 may include one, two, or more lenses. In some embodiments, the lens system 220 includes a first lens having a first focal length of 25.4 mm and a second lens having a second focal length of 35.1 mm, providing an image magnification of 1.4.

[0087] Example 1: Preparation of a scintillator Synthetic Ib diamond powder (Micron + MDA, Element Six) was converted to FNVD particles by 10 MeV electron collision, vacuum annealing at 800°C, and air oxidation at 450°C. This is described in the following literature by Lu et al.: "Far-UV-Excited Luminescence of Nitrogen Vacancy Centers: Evidence for Diamonds in Space," Angew. Chem. Int. Ed. 2017, 56, 14469-14473. The average NV density in the FNVD was approximately 10 ppm.

[0088] The FNVD layer on the ITO-coated glass substrate was prepared by electrospray deposition, as shown in Figure 2. Specifically, FNVD particles were first dispersed at a concentration of 1 mg / mL in a 70:30 methanol / aqueous solution. The suspended FNVD particles were then placed in a 1 mL glass syringe (Gastight Syringe 1001RN, Hamilton) equipped with a 2 cm long needle. The needle was positioned approximately 10 mm from the ITO-coated glass substrate (Uni-onward, Taiwan) mounted on a digital rotor (MX-RD-Pro, DLAB).

[0089] The syringe pump was operated at a flow rate of 180 μL / h, and the ITO-coated glass substrate was rotated at 10 rpm during sample preparation. A high DC voltage of +4 kV was applied to the needle, while the ITO-coated glass substrate was grounded through its holder. A green laser beam was guided through the plume to monitor the spray stability and ensure smooth deposition of the mist-like charged droplets onto the ITO-coated glass substrate. An FNVD layer approximately 1 μm thick was formed on the ITO-coated glass substrate.

[0090] Subsequently, the prepared scintillator was heated in a 300°C oven for 1 hour to remove residual water before use. Figures 4a and 4b show SEM images of the FNVD layer deposited on an ITO-coated glass substrate for 40 minutes, in plan view and cross-sectional view, respectively. The FNVD layer exhibits a polycrystalline structure. The FNVD has a thickness of approximately 1 μm and a density of approximately 1.7 g / cm². 3 , and R of about 100 nm a It holds.

[0091] Example 2: Assembly of a lens-coupled beam profiler A lens-coupled beam profiler was fabricated by coupling the transmission-mode scintillator prepared in Example 1 with a lens system and an imaging system.

[0092] The lens system within the beam profiler consisted of two 1-inch diameter lenses with focal lengths of 25.4 mm and 35.1 mm, providing an image magnification of 1.4. A visible CMOS camera with a sensing area of ​​4.97 mm × 3.73 mm and a pixel size of 3.45 μm × 3.45 μm was used to acquire fluorescence images generated by the scintillator.

[0093] The assembly process includes the following steps: 1. Beam monitoring configuration: The scintillator in Example 1 was supported by a PET film and configured to operate in transmission mode for EUV or SXR beam profiling. 2. Scintillator mounting: The scintillator was mounted on a 1-inch diameter lens tube. 3. Lens system setup: Two 1-inch diameter lenses with focal lengths of 25.4mm and 35.1mm were arranged to provide an image magnification of 1.4. 4. CMOS Camera Integration: A visible CMOS camera with a sensing area of ​​4.97 mm × 3.73 mm and a pixel size of 3.45 μm × 3.45 μm was integrated into the system to capture fluorescence images generated by the scintillator.

[0094] The resulting lens-coupled beam profiler provides a highly effective tool for EUV or SXR radiation beam profiling, enabling accurate beam diagnostics and monitoring.

[0095] Example 3: Assembly of a fiber-coupled beam profiler In this embodiment, the ITO-coated glass substrate of Example 1 is replaced with an ITO-coated FOP, and the lens system of Example 2 is omitted. Specifically, the surface of the FOP (3 mm thick) was first made conductive by coating it with a thin layer of ITO (approximately 100 nm thick) using magnetron sputtering. The coating was easily applied to the FOP, which is made of glass and consists of a bundle of micron-sized optical fibers. Next, electrospray deposition of FNVD onto the ITO-coated FOP was carried out according to the procedure described in Example 1.

[0096] The FOP has a numerical aperture of 1 and a resolution of 6 μm. The fibers within the plate are fused to form a vacuum-sealed glass plate, which can be used as a zero-thickness window. These properties were utilized to directly mount an FNVD-coated FOP to the imaging sensor of a CMOS color camera, making it EUV or SXR responsive and functional in a vacuum. This was achieved by bonding the FNVD-coated FOP plate onto an aluminum holder to form a hermetically sealed metal / glass seal, which was then mounted on a high-vacuum 2.75'' CF flange viewport via an O-ring. On the air side, the FOP was connected in direct contact with a substrate-level CMOS module (sensing area 4.97 mm × 3.73 mm, pixel size 3.45 μm × 3.45 μm), forming a very compact fiber-coupled beam profiler system. This design made it possible to transport the image generated on the FNVD layer in the vacuum chamber to the outside without light loss. The image distortion rate is approximately 1% according to specifications.

[0097] The assembly process includes the following steps: 1. Preparation of scintillator: The surface of the FOP was made conductive by coating it with a thin layer of ITO (approximately 100 nm thick) using magnetron sputtering. An FNVD layer was formed on the ITO-coated FOP by electrospray deposition of FNVD as described in Example 1. 2. Scintillator installation: The scintillator was bonded onto the aluminum holder to form an airtight metal / glass seal, and then mounted onto the high-vacuum 2.75'' CF flange viewport via an O-ring. 3. CMOS camera integration: On the atmospheric side, the scintillator was in contact with a substrate-level CMOS module (detection area 4.97 mm × 3.73 mm, pixel size 3.45 μm × 3.45 μm), forming a very compact fiber-coupled beam profiler.

[0098] The resulting fiber-coupled beam profiler provides a highly effective tool for EUV-SXR radiation beam profiling, enabling accurate beam diagnostics and monitoring with minimal image distortion.

[0099] Example 4: Beam profiling using a lens-coupled beam profiler In this example, the lens-coupled beam profiler prepared in Example 2 was used to characterize beam profiles from two beamlines (BL03A1 and BL21B2) at the National Synchrotron Radiation Research Center (NSRRC) in Taiwan. These two beamlines have significantly different characteristics. The radiation from the BL03A1 beamline was generated from electrons passing through a bending magnet, while the radiation from the BL21B2 beamline was generated from electrons traversing a linear undulator.

[0100] Fluorescence images of 50 nm radiation from these two beamlines were obtained using a lens-coupled beam profiler. Figure 5a shows the vertical fluorescence image and intensity line profile of 50 nm radiation at the BL03A1 bent magnet beamline. The slit widths are WS1=300 μm and WS2=500 μm. Figure 5b shows the vertical fluorescence image and intensity line profile of 50 nm radiation at the BL21B2 undulator beamline. The slit widths are WS1=200 μm and WS2=400 μm. The image size on the screen in Figures 5a and 5b is 7.4 mm × 5.55 mm.

[0101] The spatial resolution of the imager was measured using the standard knife-edge method at the BL21B2 beamline. As a result, a spatial resolution of approximately 30 μm for this beam profiler was confirmed.

[0102] When the CMOS camera was operated with an exposure time of 20 ms, the signal-to-noise ratio was determined to be approximately 208, which corresponds to 29 μW / cm² for 13.5 nm radiation from the BL21B2 beamline. 2 Hz 1 / 2 This suggests the noise equivalent power density of ).

[0103] In actual EUV scanners (such as those produced by ASML), the beam power density is typically several W / cm². 2 This is the level of illumination. Under these lighting conditions, the exposure time of the beam profiler to radiation in EUV lithography applications can be reduced to virtually less than 10 μs, enabling real-time monitoring and optimization of microchip manufacturing methods.

[0104] Example 5: Beam profiling using a fiber-coupled beam profiler In this embodiment, the fiber-coupled beam profiler prepared in Example 3 was used as a beam diagnostic tool for EUV or SXR radiation using the BL08B beamline at NSRRC in Taiwan. To disperse EUV or SXR radiation over a wavelength range of 15.5–0.89 nm or an energy range of 80–1400 eV, the beamline was equipped with two concave diffraction gratings, each having a ruling density of 350 or 1000 lines / mm.

[0105] Figure 6 shows the change in beam shape due to the photon energy of synchrotron radiation ranging from 300 to 1400 eV. The values ​​in parentheses represent the exposure time in milliseconds. The sensing area of ​​the CMOS camera was 4.97 mm × 3.73 mm.

[0106] Figure 7 shows 24 μW / mm². 2 The following shows the results of a beam profiler photostability test using 13.5 nm radiation from the BL08B beamline at an intensity of 7.7 × 10⁻¹⁰ for over 6 hours. 11 The photon rate is photons / second, and the beam spot area is approximately 0.46 mm². 2 The measured fluorescence intensity was normalized by the photocurrent of a calibrated photodiode. The images in Figure 7 show the beam at the start (left) and end (right) of the measurement, demonstrating that the change in the beam profile after 6 hours of continuous operation is negligible. The fluorescence intensity decreased to approximately 4% of its initial value after 6 hours of continuous irradiation of the FNVD film.

[0107] Example 6: Measurement of light yield of scintillator A lens-coupled beam profiler with a photodiode as the imaging system was used to characterize scintillators fabricated from FNVDs with an average NV density of approximately 0.3 ppm. Scintillators with an average NV density of approximately 0.3 ppm were prepared according to the method described in Example 1. A lens-coupled beam profiler with a photodiode as the imaging system was assembled according to the process described in Example 2.

[0108] Light yield measurements were performed using synchrotron radiation from beamline BL21B8, which has two concave diffraction gratings, each with a ruling density of 350 or 1000 lines / mm. Beamline BL21B8 has a bending magnet source and emits 10⁻¹⁰ eV over an energy range of 80–1200 eV. 11 ~10 13 A beam flux on the order of photons / s was provided. An absolute extreme ultraviolet photodiode (AXUV100G, Opto Diode) measured the photon flux of the incident beam at the scintillator location. A photodiode (PIN-10D, OSI Optoelectronics) was used to detect the total fluorescence emitted from the scintillator. Figure 8 shows the optical yield of the scintillator for EUV / SXR radiation over the energy range of 80–1200 eV. The sharp change at 285 eV is due to K-edge absorption by carbon atoms. The specific optical yields are 49 photons / keV (incident beam energy of 1200 eV), 33 photons / keV (incident beam energy of 800 eV), or 17 photons / keV (incident beam energy of 90 eV).

[0109] In summary, the use of FNVD coatings as scintillators, the incorporation of FNVD-coated FOPs into EUV detectors, and the adaptation of electrospray deposition for applying FNVD coatings provide substantial improvements in sensitivity, resolution, durability, and overall performance compared to conventional methods and detectors. These advantages make EUV detectors incorporating FNVD coatings an ideal solution for advanced imaging and detection applications in the field of EUV and SXR radiation.

[0110] This disclosure may provide the following embodiments: 1. A beam profiler, 〇 Scintillator; An imaging system configured to capture fluorescence images generated by a scintillator; Equipped with, 〇Scintillates are, ·substrate; • Scintillator layer on the substrate; Equipped with, The scintillator layer contains one or more fluorescent nitrogen-vacancy diamonds, approximately 1 to 3.5 g / cm³. 3 It has a density of . 2. The beam profiler according to item 1, wherein the scintillator includes one or more nitrogen vacancy centers having an average density in the range of about 0.1 to 1,000 ppm. 3. The scintillator is a beam profiler as described in item 1, positioned at the focal point of the imaging system. 4. The beam profiler described in item 1, further comprising a lens system optically coupled to the scintillator. 5. The lens system is a beam profiler as described in item 4, comprising two or more lenses. 6. A beam profiler as described in item 5, wherein the lens system provides the imaging system with an image magnification greater than 1 for the fluorescence image generated by the scintillator layer. 7. A beam profiler, 〇 Scintillator; ○ Imaging system that contacts the scintillator; Equipped with, 〇Scintillators are, • Fiber optic plate; • Conductive layer on optical fiber plate; • Scintillator layer on the conductive layer: Equipped with, The scintillator layer contains one or more fluorescent nitrogen-vacuated diamonds and has a length of 1 to 100 mm in a direction substantially parallel to the interface between the conductive layer and the optical fiber plate. 8. A beam profiler as described in item 7, wherein the optical fiber plate includes one or more optical fibers extending along a direction substantially perpendicular to the interface. 9. A beam profiler as described in Item 8, wherein one or more ends of the one or more optical fibers are in contact with the conductive layer. 10. A beam profiler as described in item 7, wherein the optical fiber plate has an numerical aperture of approximately 0.5 to 2. 11. A beam profiler as described in item 7, wherein the optical fiber plate has a resolution of approximately 2 to 10 μm. 12. The beam profiler is the beam profiler described in item 7, having a spatial resolution of less than approximately 50 μm. 13. The beam profiler is the beam profiler described in item 7, having a signal-to-noise ratio of approximately 100 or more. 14. A scintillator, Circuit board; ○ Scintillator layer on the substrate; Equipped with, The scintillator layer contains one or more fluorescent nitrogen-vacancy diamonds, approximately 1 to 3.5 g / cm³. 3 It has a density of . 15. A scintillator as described in item 14, further comprising a conductive layer disposed between a substrate and a scintillator layer. 16. A scintillator as described in item 14, wherein the scintillator layer has a thickness in the range of about 0.1 to 500 μm. 17. A scintillator as described in item 16, wherein the scintillator layer has an average surface roughness Ra of less than approximately 1,000 nm. 18. A scintillator according to item 17, wherein one or more fluorescent nitrogen-vacancy diamonds contain nitrogen-vacancy centers having a density of approximately 0.1 to 1,000 ppm. 19. One or more fluorescent nitrogen-vacancy diamonds, comprising a scintillator as described in item 17, containing neutral nitrogen-vacancy centers with a density of approximately 0.1 to 1,000 ppm. 20. A scintillator as described in item 14, wherein the scintillator layer has a photon yield of 10 photons / keV or more for incident radiation energies in the range of about 10 to 1500 eV. 21. A method for forming a scintillator, Step 1: Provide the circuit board; ○ A step of dispersing fluorescent nitrogen-vacuated diamond particles in a solvent to form a dispersion; ○ A step of generating charged droplets containing the fluorescent nitrogen-vacuated diamond particles from the dispersion; ○ A step of depositing charged droplets onto a substrate; A method of having. 22. The method described in item 21, further comprising providing a dispersion in an injector. 23. The method described in item 22, further comprising applying an electric field between the injector and the substrate. 24. The method according to item 21, wherein the fluorescent nitrogen-vacuated diamond particles have an average hydrodynamic diameter of about 50 to 200 nm. 25. The method according to item 21, wherein the fluorescent nitrogen-vacant diamond particles have a polydispersity index of about 0.05 to 0.2. 26. The method according to item 21, wherein the fluorescent nitrogen-vacuated diamond particles contain nitrogen-vacuated centers having a density of about 0.1 to 1,000 ppm. 27. The method according to item 21, wherein the fluorescent nitrogen-vacuated diamond particles contain neutral nitrogen-vacuated centers having a density of about 0.1 to 1,000 ppm.

[0111] The foregoing descriptions in this disclosure are provided for illustrative and illustrative purposes only. They are not intended to be exhaustive or to limit this disclosure to the exact form disclosed. Many modifications and variations will be apparent to those skilled in the art.

[0112] The embodiments have been selected and described in order to best illustrate the principles of the present disclosure and their practical applications, so that those skilled in the art may understand the present disclosure in terms of various embodiments and with various modifications suitable for the specific use to be intended.

[0113] As used herein and unless otherwise defined, the terms “substantially,” “effectively,” “approximately,” and “about” are used to describe and explain minor variations. When used in conjunction with an event or situation, the term may encompass situations where the event or situation occurs exactly as well as situations where it occurs as a close approximation. For example, when used with a numerical value, the term may encompass a variation of ±10% or less of that value, e.g., ±5%, ±4%, ±3%, ±2%, ±1%, ±0.5%, ±0.1%, or ±0.05%. The term “substantially coplanar” may refer to two surfaces within a micrometer that lie along the same plane, e.g., two surfaces within 40 μm of each other, within 20 μm, 10 μm, or 1 μm, that lie along the same plane.

[0114] As used herein, the singular terms “a,” “an,” and “the” can refer to multiple objects unless the context clearly indicates otherwise. In some embodiments, a component provided “on top of” or “above” another component may include cases where the former component is directly (e.g., in physical contact) on top of the latter component, as well as cases where one or more intervening components are located between the former and latter components.

[0115] While this disclosure has been described and illustrated with reference to specific embodiments, these descriptions and illustrations are not limiting. Those skilled in the art will understand that various modifications can be made and equivalents can be substituted without departing from the true spirit and scope of this disclosure as defined by the appended claims. The drawings may not necessarily be drawn to a constant scale. There may be differences between the artistic representation in this disclosure and the actual apparatus due to manufacturing processes and tolerances. Other embodiments of this disclosure that are not specifically illustrated may exist. This specification and the drawings should be considered illustrative, not limiting. Modifications can be made to adapt specific circumstances, materials, compositions, methods, or processes to the purpose, spirit, and scope of this disclosure. All such modifications are intended within the scope of the claims attached herein. While the methods disclosed herein have been described with reference to specific operations performed in a particular order, it will be understood that these operations can be combined, subdivided, or rearranged without departing from the teachings of this disclosure to form equivalent methods. Thus, the order and grouping of operations are not limiting unless specifically shown herein.

Claims

1. It is a beam profiler, Scintillator; An imaging system for capturing the fluorescence image generated by the scintillator; Equipped with, The aforementioned scintillator is A substrate comprising one or more optical fiber plates; The conductive layer above the optical fiber plate; A scintillator layer above the conductive layer; Equipped with, The scintillator layer contains one or more fluorescent nitrogen-vacuated diamonds, in a concentration of 1 to 3.5 g / cm³. ３ It has a density and an average surface roughness Ra of 10 to 800 nm. The imaging system is in contact with the scintillator. The optical fiber plate comprises one or more optical fibers extending along a direction substantially perpendicular to the interface between the conductive layer and the optical fiber plate. One or more ends of the one or more optical fibers are in contact with the conductive layer. Beam profiler.

2. The beam profiler according to claim 1, wherein the scintillator has one or more nitrogen vacancy centers having an average density in the range of 0.1 to 1,000 ppm.

3. The beam profiler according to claim 1, wherein the optical fiber plate has an numerical aperture of 0.5 to 2.

4. The beam profiler according to claim 1, wherein the optical fiber plate has a resolution of 2 to 10 μm.

5. The beam profiler according to claim 1, wherein the beam profiler has a spatial resolution of less than 50 μm.

6. The beam profiler according to claim 1, wherein the beam profiler has a signal-to-noise ratio of 100 or more.

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