Semiconductor equipment

Abstract

To provide a semiconductor device that can improve the adhesion between a lead and sealing resin.SOLUTION: A semiconductor device A10 includes a lead 10 having a main surface 101A facing a thickness direction, a semiconductor element mounted on the main surface 101A, and sealing resin provided in contact with the main surface 101A and covering the semiconductor element. In the lead 10, a plurality of grooves 20 depressed from the main surface 101A and separated from each other are formed. The grooves 20 are apart from the periphery of the main surface 101A. The grooves 20 include a plurality of first grooves 21 and a plurality of second grooves 22 arranged along a first direction x that is orthogonal to the thickness direction. Each of the first grooves 21 and each of the second grooves 22 are linear extending in the direction that is orthogonal to the thickness direction. In the first direction x, at least two of the first grooves 21 and at least two of the second grooves 22 are disposed alternately.SELECTED DRAWING: Figure 11

Claims

1. A lead having a main surface facing one side in the thickness direction, A semiconductor element mounted on the main surface, The device comprises a sealing resin that is in contact with the main surface and covers the semiconductor element, The lead has a plurality of grooves formed therein that are recessed from the main surface and spaced apart from each other. The aforementioned plurality of grooves are located away from the periphery of the main surface, The plurality of grooves include a plurality of first grooves and a plurality of second grooves arranged along a first direction perpendicular to the thickness direction, Each of the plurality of first grooves is linear in shape and extends in the first direction. Each of the plurality of second grooves is linear in shape and extends in a second direction perpendicular to the thickness direction and the first direction, A semiconductor device wherein the plurality of first grooves and the plurality of second grooves are arranged in a staggered pattern along the first direction.

2. The semiconductor device according to claim 1, wherein the length of each of the plurality of second grooves is longer than the length of each of the plurality of first grooves.

3. The plurality of grooves include a plurality of third grooves which are arranged along the first direction and each is a straight line extending in the second direction, The semiconductor device according to claim 1 or 2, wherein any of the plurality of third grooves is located between two adjacent first grooves among the plurality of first grooves and overlaps the plurality of first grooves when viewed in the first direction.

4. The semiconductor device according to claim 3, wherein the plurality of third grooves are located adjacent to the plurality of second grooves in the second direction.

5. The semiconductor device according to claim 4, wherein each of the plurality of third grooves overlaps with one of the plurality of second grooves when viewed in the second direction.

6. The plurality of grooves include a plurality of fourth grooves which are arranged along the first direction and each is a straight line extending in the first direction, The plurality of fourth grooves are located on the opposite side of the plurality of second grooves from the plurality of first grooves in the second direction, The semiconductor device according to claim 4 or 5, wherein any of the plurality of third grooves is located between two adjacent fourth grooves among the plurality of fourth grooves and overlaps the plurality of fourth grooves when viewed in the first direction.

7. The lead includes die pads and terminals located apart from each other, The main surface includes a first main surface included in the die pad and a second main surface included in the terminal. The semiconductor element is mounted on the first main surface, The semiconductor device according to any one of claims 1 to 6, wherein the terminal is electrically connected to the semiconductor element.

8. Further comprising a conductive member, The semiconductor element has a first electrode provided on the side facing the first main surface in the thickness direction, The semiconductor device according to claim 7, wherein the conductive member is electrically connected to the first electrode and the terminal, respectively.

9. The terminal comprises a substrate having the second main surface and a metal layer laminated on the second main surface, The semiconductor device according to claim 8, wherein the conductive member is electrically bonded to the metal layer.

10. Further comprising a junction layer interposed between the first main surface and the semiconductor element, The semiconductor device according to claim 8 or 9, wherein the bonding layer contains a metal element.

11. The semiconductor element has a second electrode provided on the opposite side from the first electrode in the thickness direction, The semiconductor device according to claim 10, wherein the second electrode is electrically bonded to the die pad via the bonding layer.

12. The semiconductor device according to claim 10 or 11, wherein, when viewed in the thickness direction, the plurality of grooves surround the bonding layer.

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