Susceptor and method for manufacturing the same
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- MICOCERAMICS LTD
- Filing Date
- 2025-10-17
- Publication Date
- 2026-06-09
AI Technical Summary
【0016】 本発明に係るサセプター及びその製造方法によれば、ベースボディーの上板と下板の各プレートとブレージングフィラーとの間に多層(活性金属層とアルミニウム層)表面処理を適用することにより、MMC素材のベースボディーの上板と下板の結合力を向上させることができ、これにより、半導体装備内の静電チャックボディーにおいてHeガスなどのリーク(Leak)を減少させて真空度を向上させることができ、冷却流路での冷却媒のリークを低減でき、結果として、安定した工程を維持して収率向上に寄与することができる。実施例において、前記Heガスリークレートは、従前の1.0E-03(mbar*l/s)から改善後の2.0.E-08(mbar*l/s)のレベルまで低くなることを確認した。
Smart Images

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Abstract
Claims
1. A method for manufacturing the base body of a susceptor, The base body includes a lower plate and an upper plate, each made of MMC material, and a joint between them. The steps include sequentially laminating a first activated metal layer and a first aluminum layer onto the joint surface of the upper plate, The steps include sequentially laminating a second activated metal layer and a second aluminum layer onto the joint surface of the lower plate, The steps include interposing a brazing filler layer between the first aluminum layer of the upper plate and the second aluminum layer of the lower plate, and converting the brazing filler layer, the first aluminum layer, and the second aluminum layer into a brazing bond layer by heat treatment to braze-bond the lower plate and the upper plate, Includes, A method for manufacturing a susceptor base body, wherein the proportion of Al crystal particles in the brazing bonding layer having a diameter size greater than 0 μm and less than 6 μm is between 51% and 92%, and the proportion of Al crystal particles having a diameter size of 6 μm or more and less than 60 μm is between 8% and 42%.
2. A method for manufacturing a susceptor base body according to claim 1, comprising a groove between the joint surfaces of the lower plate.
3. A method for manufacturing a susceptor base body according to claim 1, wherein the first active metal layer and the second active metal layer contain one or more of Ti, Zr, Nb, Hf, or Ta.
4. The method for manufacturing a susceptor base body according to claim 1, wherein the thickness of the first active metal layer and the second active metal layer is 1 μm to 5 μm.
5. The method for manufacturing a susceptor base body according to claim 1, wherein the thickness of the first aluminum layer and the second aluminum layer is 5 μm to 10 μm.
6. A method for manufacturing a susceptor base body according to claim 1, wherein the Al crystal particles of the brazing bonding layer having a diameter size greater than 0 μm and less than 6 μm are more abundantly distributed in the boundary region between the brazing bonding layer and the first active metal layer and the boundary region between the brazing bonding layer and the second active metal layer compared to the central region of the brazing bonding layer within the central region between the upper plate and the lower plate.
7. The diameter size of the Al crystal grains in the brazing bond layer in the central region of the brazing bond layer within the central region between the upper plate and the lower plate is 6 μm or more and less than 60 μm, A method for manufacturing a susceptor base body according to claim 1, wherein the diameter size of the Al crystal grains in the brazing bonding layer in the boundary region between the brazing bonding layer and the first aluminum layer or in the boundary region between the brazing bonding layer and the second aluminum layer is greater than 0.0 μm and less than 6 μm.
8. A susceptor including a base body and an insulating plate, The base body includes a lower plate and an upper plate, each made of MMC material, and a joint between them. The aforementioned joint is The first activated metal layer on the upper plate side, the second activated metal layer on the lower plate side, The brazing bond layer between the first active metal layer and the second active metal layer is included, The brazing bonding layer is The bonding layer is formed by the transformation of the first aluminum layer on the first active metal layer, the second aluminum layer on the second active metal layer, and the brazing filler layer interposed between the first aluminum layer and the second aluminum layer through heat treatment. A susceptor in which the proportion of Al crystal grains in the brazing bonding layer having a diameter size greater than 0 μm but less than 6 μm is between 51% and 92%, and the proportion of Al crystal grains having a diameter size of 6 μm or more but less than 60 μm is between 8% and 42%.
9. The susceptor according to claim 8, wherein the joint is formed between the cooling channels of the base body.
10. The susceptor according to claim 8, wherein the first active metal layer and the second active metal layer contain one or more of Ti, Zr, Nb, Hf, or Ta.
11. The susceptor according to claim 8, wherein the thickness of the first active metal layer and the second active metal layer is 1 μm to 5 μm.
12. The susceptor according to claim 8, wherein the thickness of the first aluminum layer and the second aluminum layer is 5 μm to 10 μm.
13. The susceptor according to claim 8, wherein the Al crystal particles of the brazing bonding layer, whose diameter size is greater than 0 μm and less than 6 μm, are more abundantly distributed in the boundary region between the first active metal layer and the second active metal layer than in the central region of the brazing bonding layer within the central region between the upper plate and the lower plate.
14. The diameter size of the Al crystal grains in the brazing bond layer in the central region of the brazing bond layer within the central region between the upper plate and the lower plate is 6 μm or more and less than 60 μm, The susceptor according to claim 8, wherein the diameter size of the Al crystal grains in the brazing bonding layer in the boundary region between the brazing bonding layer and the first aluminum layer or in the boundary region between the brazing bonding layer and the second aluminum layer is greater than 0.0 μm and less than 6 μm.