Differential pressure sensor device

Abstract

To provide a differential pressure sensor device capable of accumulating and maintaining atmospheric pressure more reliably.SOLUTION: A differential pressure sensor device comprises a substrate, a separate layer formed on a main surface of the substrate, and a first cavity and a second cavity separated from each other by a membrane. The first cavity is in fluid communication with a channel in fluid communication with a vent hole, through which air can enter from the surrounding environment of the sensor device. The channel extends in a plane substantially parallel to the main surface within the substrate.SELECTED DRAWING: Figure 3

Claims

[Claim 1] A differential pressure sensor device (200), The differential pressure sensor device (200) is - A conductive multilayer substrate (210) having a plurality of lower layers (211, 212, 213), wherein the plurality of lower layers (211, 212, 213) include at least a first lower layer (213) and a second lower layer (211), and the multilayer substrate (210), - A separate layer (204, 405) formed on the main surface of the first lower layer (213) of the multilayer substrate (210), - An application-specific integrated circuit ASIC (206) formed on the aforementioned separate layers (204, 405), - comprising a micro-electromechanical system (MEMS) (205) formed on the aforementioned separate layers (204, 405), The second lower layer (211) is the layer furthest from the other layers (204, 405) among the plurality of lower layers (211, 212, 213), The MEMS (205) is configured to output an electrical signal indicating pressure fluctuations sensed on or by the membrane (M) formed by the top surface of the MEMS (205) to the ASIC (206). The ASIC (206) is configured to process the electrical signal by amplification and / or analog-to-digital conversion and / or noise filtering. The differential pressure sensor device (200) is - The first cavities (C) separated from each other by the aforementioned membrane (M) １ ) and the second cavity (C ２ ) further equipped, The first cavity (C １ ) is in fluid communication with the ventilation holes (208, 406), the channels (209, 407) which are in fluid communication with the multilayer substrate (210), and through passages that penetrate a part of the multilayer substrate (210) and the other layers (204, 405). The channels (209, 407) are formed in at least one lower layer (212) between the first lower layer (213) and the second lower layer (211) of the plurality of lower layers (211, 212, 213) of the multilayer substrate (210), and extend in a plane substantially parallel to the main surface of the first lower layer (213) of the multilayer substrate (210), The aforementioned ventilation holes (208, 406) are located within the first cavity (C １ The differential pressure sensor device (200) is configured to communicate fluidly with the surrounding environment so that atmospheric pressure or a reference pressure can be accumulated within it. The second cavity (C) ２ ) is located above the film (M), and the second cavity (C ２ ) is the first cavity (C １ It is provided for housing a test medium whose pressure will be measured in comparison to the atmospheric pressure or reference pressure accumulated within it. Characterized by, Differential pressure sensor device (200). [Claim 2] - Another channel that is in fluid communication with the second cavity, - Further equipped with a reservoir for the test medium, The differential pressure sensor device (200) according to claim 1. [Claim 3] The multilayer substrate (210) further comprises a printed circuit board bonded to another main surface of the multilayer substrate (210) that is opposite to the main surface of the multilayer substrate (210). A differential pressure sensor device (200) according to claim 1 or 2. [Claim 4] Multiple resistors or multiple piezoresistive elements are formed on the surface of the film (M). A differential pressure sensor device (200) according to any one of claims 1 to 3. [Claim 5] The aforementioned ventilation holes (208, 406) are located within the first cavity (C １ The differential pressure sensor device (200) is in fluid communication with the surrounding environment so that the atmospheric pressure can be accumulated within it. A differential pressure sensor device (200) according to any one of claims 1 to 4. [Claim 6] The plurality of lower layers (211, 212, 213) include at least a third lower layer (212) formed between the first lower layer (213) and the second lower layer (211), The channels (209, 407) are formed in the third lower layer (212). A differential pressure sensor device (200) according to any one of claims 1 to 5. [Claim 7] The differential pressure sensor device (200) further comprises a housing (202) formed in the separate layer (204, 405) and housing the MEMS (205) and the ASIC (206), The first cavity (C1) is formed by the MEMS (205), The second cavity (C2) is partially formed by the housing (202), the other layers (204, 405), and the film (M). A differential pressure sensor device (200) according to any one of claims 1 to 6. [Claim 8] A method for manufacturing a differential pressure sensor device (200), The aforementioned method, - A step of forming a conductive multilayer substrate (210) having a plurality of lower layers (211, 212, 213) including at least a first lower layer (213) and a second lower layer (211), - The step of forming another layer (204, 405) on the main surface of the first lower layer (213) of the multilayer substrate (210), - The step of forming channels (209, 407) in at least one lower layer (212) between the first lower layer (213) and the second lower layer (211) of the plurality of lower layers (211, 212, 213) in a plane parallel to the main surface of the first lower layer (213) of the multilayer substrate (210), such that the channels (209, 407) form ventilation holes (208, 406) on the short side of the multilayer substrate (210) that is perpendicular to the main surface of the first lower layer (213) of the multilayer substrate (210), - The step of forming a through passage that penetrates the aforementioned separate layer (204, 405) and connects to the channel (209, 407), Forming a first cavity (C １ ) on the separate layer (204, 405) by forming a film (M) on the separate layer (204, 405); The step of forming an application-specific integrated circuit (ASIC) (206) and a micro-electromechanical system (MEMS) (205) on the aforementioned separate layers (204, 405), The second lower layer (211) is the layer furthest from the other layer (204) among the plurality of lower layers (211, 212, 213), The MEMS (205) is configured to output an electrical signal indicating pressure fluctuations sensed by the film (M) on or formed by the top surface of the MEMS (205) to the ASIC (206). The ASIC (206) is configured to process the electrical signal by amplification and / or analog-to-digital conversion and / or noise filtering. The aforementioned through passage is the first cavity (C １ It is formed to lead to, The aforementioned ventilation holes (208, 406) are located within the first cavity (C １ The differential pressure sensor device (200) is configured to communicate fluidly with the surrounding environment so that atmospheric pressure or a reference pressure can be accumulated within it. A second cavity (C) is located above the aforementioned membrane (M). ２ The further step includes providing a housing that partially forms the second cavity (C ２ ) is the first cavity (C １ It is provided for housing a test medium whose pressure will be measured in comparison to the atmospheric pressure or reference pressure accumulated within it. A method for manufacturing a differential pressure sensor device (200). [Claim 9] The differential pressure sensor device (200) is a gauge pressure sensor device. The method according to claim 8. [Claim 10] The formation of the multilayer substrate (210) is - To form the first substrate lower layer (401), - To form on the first substrate lower layer (401) either a second substrate lower layer (403) partially containing sacrificial material or a sacrificial layer adjacent to the second substrate lower layer containing sacrificial material, - Including forming a third substrate layer (404) on the second substrate layer (403) which partially contains the sacrificial material, or on both the sacrificial layer containing the sacrificial material and the adjacent second substrate layer, The formation of the channels (209, 407) in the multilayer substrate (210) includes removing the sacrificial material after the formation of the third substrate lower layer (404). The method according to claim 8 or 9. [Claim 11] A contact pad is formed on the main surface of the multilayer substrate (210) on the side opposite to the main surface of the multilayer substrate (210), Adhering the printed circuit board to the surface of other main parts This also includes, The method according to any one of claims 8 to 10. [Claim 12] The further method includes forming a plurality of resistors or a plurality of piezoresistive elements on the surface of the film (M). The method according to any one of claims 8 to 11. [Claim 13] The method described in any one of claims 8 to 12 can be obtained, Differential pressure sensor device (200).

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