Gate-all-around rear power rail with diffusion shielding

By using a diffusion-blocking material as a planarization stop for GAA backside power rails, the challenges of etching stop layer absence are addressed, ensuring precise planarization and reliable back-side power rail formation in semiconductor devices.

JP7873728B2Active Publication Date: 2026-06-12APPLIED MATERIALS INC
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Patent Information

Application Number
JP2024547668
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2023-02-07
Filing Date
2023-02-15
Publication Date
2026-06-12
Estimated Expiration
2043-02-15

AI Technical Summary

Technical Problem

The formation of back-side power rails in semiconductor devices lacks an etching stop layer, leading to issues such as over-polishing, under-etching, short circuits, and open circuits during chemical mechanical planarization (CMP), which affects wafer thickness and circuit integrity.

Method used

Incorporating a diffusion-blocking material as a planarization stop for forming a gate-all-around (GAA) backside power rail, using it as an etching stop layer during back-side wafer polishing to prevent over-etching and under-etching, and ensuring precise planarization.

Benefits of technology

The diffusion-blocking material effectively reduces the height and aspect ratio of back-side power rail vias, improving the etching and filling processes, and enhances the reliability of back-side power rail connections in GAA devices.

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Abstract

A semiconductor device and method for its manufacture are described. The method includes forming a diffusion blocking opening in a backside surface and filling it with a diffusion blocking material that acts as a planarization stop. In some embodiments, a single diffusion blocking opening is formed. In other embodiments, a mixed diffusion blocking opening is formed.
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Citation Information

Patent Citations

  • Semiconductor device

    CN112750824A

  • Forming single and double diffusion breaks

    US20200381307A1

  • Single diffusion break isolation for gate-all-around field-effect transistor devices

    US20200381426A1

  • Backside Power Rail Structure and Methods of Forming Same

    US20210134721A1

  • Semiconductor device with isolation structures

    US20210265220A1