Robust half bridge
By incorporating interleaved source and gate regions in the low-side transistor to create a large built-in capacitance, the half-bridge circuit mitigates shoot-through events, enhancing immunity and efficiency in high-power conversion systems.
JP7874199B2Active Publication Date: 2026-06-15VISIC TECH
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Patent Information
- Application Number
- JP2024568422
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-05-18
- Filing Date
- 2023-05-18
- Publication Date
- 2026-06-15
- Estimated Expiration
- 2043-05-18
AI Technical Summary
Technical Problem
Half-bridge circuits in high-power conversion systems are prone to shoot-through due to voltage surges causing the low-side transistor to turn on while the high-side transistor is still on, leading to potential short circuits and damage.
Method used
The low-side transistor is designed with a plurality of interleaved source and gate regions forming a composite source and gate, creating a large built-in gate-source capacitance to mitigate voltage amplitude and reduce the probability of shoot-through.
Benefits of technology
The solution effectively limits the voltage difference between the gate and source, reducing the likelihood of shoot-through and enhancing the circuit's immunity to such events, thereby protecting the power supply and improving switching efficiency.
✦ Generated by Eureka AI based on patent content.
Abstract
A semiconductor transistor including a drain region, a plurality of source regions, and a plurality of gate regions interleaved with the source regions.
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