Extreme UV Mask Inspection System

The test mask with absorbing and reflective portions addresses wavefront aberrations in EUV inspection systems, enhancing imaging and defect detection by measuring and adjusting system components in-situ.

JP7874209B2Active Publication Date: 2026-06-15KLA CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
KLA CORP
Filing Date
2025-02-18
Publication Date
2026-06-15

AI Technical Summary

⚠Technical Problem

Existing EUV inspection systems suffer from wavefront aberrations due to optical devices, leading to distorted images and impaired defect detection in nano circuits, with diagnostic test masks prone to malfunctions and short lifespan.

⚗Method used

A test mask with absorbing and reflective portions on a substrate, configured to measure wavefront aberrations in-situ within the EUV mask inspection system, using EUV illumination and detectors to identify and adjust system components.

🎯Benefits of technology

Enables accurate and efficient measurement and mitigation of wavefront aberrations within the EUV inspection system, improving imaging and defect detection capabilities.

✦ Generated by Eureka AI based on patent content.

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Abstract

To provide an improved system capable of in situ measurement of wave-front aberration of EUV mask inspection systems.SOLUTION: A metrology system for measuring wave-front aberration of an extreme ultraviolet (EUV) mask inspection system is disclosed. The test mask includes a substrate formed from a material having substantially no reflectivity for EUV illumination, and one or more patterns formed on the substrate. The one or more patterns have a reflective portion configured to reflect EUV illumination and positioned in a common plane, and an absorption portion having substantially no reflectivity for EUV illumination and positioned on or above the substrate.SELECTED DRAWING: Figure 1A
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